CN212646440U - Complete aplanatic confocal imaging detection device based on parallel flat-plate image-splitting adjacent surfaces - Google Patents
Complete aplanatic confocal imaging detection device based on parallel flat-plate image-splitting adjacent surfaces Download PDFInfo
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Abstract
The utility model discloses the application provides a confocal formation of image detection device of complete aplanatic distance based on parallel flat board branch looks proximal surface adopts a parallel flat board to realize the new method that adjacent two-sided space separation formation of image detected in adjacent two-sided formation of image light path respectively. The new method can obtain the simultaneous complete aplanatic confocal imaging detection of two adjacent surfaces of the semiconductor crystal grain, like a polarization image splitting method, a two-color separation imaging method or a time difference resolution imaging method, but does not need to use a polarization optical element and a polarization CMOS sensor (camera) or a color camera and extra image processing thereof, thereby effectively improving the cost performance and the detection efficiency of the detection device.
Description
The technical field is as follows:
the utility model belongs to optical detection and machine vision field especially relate to a confocal formation of image detection device of complete aplanatic distance simultaneously of looks proximal surface based on parallel flat board divides the image.
Background art:
in recent years, the combination of optical imaging technology and artificial intelligence has become a very active research field for optical engineering technology application, the intelligent manufacturing of semiconductor refrigeration device crystal grains cannot leave the machine vision automatic optical detection technology, in order to improve production efficiency, the traditional machine vision automatic optical detection device for detecting one surface of an object to be detected based on one imaging device cannot meet the continuously developed detection application requirements, the research of the semiconductor crystal grain double-surface simultaneous defect imaging detection technology becomes necessary, and the complete aplanatic confocal imaging of a double-surface imaging detection optical path is one of the main core technical problems to be solved.
The main optical technical problems to be solved by the device and method for simultaneously detecting defects of opposite surfaces or adjacent surfaces of a semiconductor crystal grain include aplanatic confocal imaging of a double-sided detection light path, the problems of confocal and resolution caused by an optical path difference between double-sided imaging light paths are solved by adopting a large-depth-of-field telecentric imaging lens in the existing granted patents and patent applications, and the device and method for simultaneously aplanatic confocal imaging and isoluminance illumination detection of opposite surfaces of the crystal grain are solved by the patent applications (application numbers 2019113692573 and 2020101330447, unpublished), as shown in fig. 1 and 2.
And fig. 3 is an optical detection device and method proposed by application No. 202010171706X (unpublished), which well solves the problem of quasi-aplanatic confocal imaging detection of adjacent surfaces of semiconductor crystal grains, but there still exists an optical path difference Δ between adjacent double-sided imaging optical paths, and this small optical path difference Δ can be compensated by selecting a telecentric imaging lens with a sufficiently large depth of field, when the size of the semiconductor crystal grain to be detected is increased, the optical path difference Δ and the object-side field of view VOF =Δ + a are also increased, and a telecentric imaging lens with a large field of view and a large depth of field must be used, which will correspondingly increase the cost of the telecentric imaging lens.
Fig. 4 provides a novel method for realizing complete aplanatic confocal imaging detection of adjacent surfaces of semiconductor crystal grains by using a single-group imaging system based on a time difference resolution imaging method.
The patent application of fig. 5 uses a polarization beam splitter to obtain two illumination beams with mutually perpendicular polarization directions to respectively illuminate two adjacent faces of a semiconductor die to be tested, and proposes a polarized light splitting imaging (abbreviated as "polarization splitting imaging") based method, a device and a method for realizing simultaneous and complete aplanatic confocal imaging detection of the adjacent faces of the semiconductor die by using a polarization camera,
the patent application of fig. 6 proposes a new method for realizing simultaneous and complete aplanatic confocal imaging detection of adjacent surfaces of semiconductor crystal grains by combining a polarization splitting prism assembly and using a common CMOS or CCD camera, still based on the principle of polarized light splitting imaging (polarization splitting for short).
The invention content is as follows:
the utility model discloses the application provides a new method based on complete aplanatic confocal imaging device of looks proximal surface, distinguish the imaging method with polarization branch like method, two-color separation imaging method or time difference and be the same, this new method can obtain the adjacent two-sided complete aplanatic confocal imaging detection simultaneously of semiconductor crystalline grain, nevertheless need not to use polarization optical element and polarization CMOS sensor (camera), or color camera and extra image processing, has effectively improved detection device's price/performance ratio and detection efficiency.
The utility model discloses confocal formation of image detection device of complete aplanatic simultaneously of looks proximal surface based on parallel flat board divides like, its characterized in that: the device comprises a CMOS or CCD camera, a telecentric imaging lens, a cubic beam splitting and image combining device, a semiconductor crystal grain and a transparent glass objective table for bearing the semiconductor crystal grain, wherein the CMOS or CCD camera, the telecentric imaging lens, the cubic beam splitting and image combining device, the semiconductor crystal grain and the transparent glass objective table are sequentially arranged in the light path direction; the side right-angle rotating image prism and the second glass parallel flat plate as well as the cubic beam splitting and image combining device are positioned on the optical axis of the telecentric imaging lens, meanwhile, a first right-angle surface of the side right-angle rotating image prism is opposite to a first surface of the cubic beam splitting and image combining device, a second right-angle surface of the side right-angle rotating image prism is opposite to the side surface of the semiconductor crystal grain, and the inclined surface of the side right-angle rotating image prism is obliquely arranged with the optical axis of the telecentric imaging lens; two right-angle surfaces of the skyhook right-angle rotating image prism are respectively opposite to the skyhook of the semiconductor crystal grain and the second surface of the cubic beam splitting and image combining device; the surface normal of the first glass parallel flat plate and the optical axis of the optical path form an included angle, the surface normal of the second glass parallel flat plate and the optical axis of the optical path form an included angle, a coaxial external illumination light source is arranged beside a fourth surface opposite to the second surface of the cubic beam splitting and imaging combiner, and the top surface and the side surface of the semiconductor crystal grain are subjected to confocal imaging on the sensor surface of the camera through a right-angle image rotating prism, the glass parallel flat plate and the cubic beam splitting and imaging combiner in a complete equal optical path respectively so as to obtain independent images of the two surfaces of the semiconductor crystal grain on a CMOS or CCD camera.
Furthermore, the distance between the center of the cubic beam splitting image combiner and the center of the inclined plane of the side right-angle relay prism is D/2+ D, the cubic beam splitting image combiner and the inclined plane of the top right-angle relay prism are on the same horizontal height, the distance between the cubic beam splitting image combiner and the inclined plane of the top right-angle relay prism is D/2+ D, the working distance WD of a side imaging optical path is = D/2+ D/2, the working distance WD of the top imaging optical path is = WD = D/2+ D/2, D is the width of a transparent glass objective table, and D is the side length; the semiconductor crystal grain top imaging optical path working distance WD = D/2+ D/2=30mm, and the side imaging optical path working distance WD = D/2+ D/2=30 mm.
Further, the first and second glass parallel plates have a thickness t =5.83mm, an angle α =25 ° between a normal of the glass parallel plate surface and the optical axis, the plate glass material is K9, and the interval δ =1.8mm between the two-sided images is calculated;
furthermore, the size of the top right-angle transfer prism is 15 × 15mm, the size of the side right-angle transfer prism is 15 × 15mm, and the size of the cubic beam splitter/combiner is 15 × 15 mm; the centers of the reflecting surfaces of the two right-angle relay prisms are connected with the center of the semiconductor crystal grain to form a square symmetrical light path structure with the size of 37.5x 37.5 mm.
Furthermore, the coaxial external illumination light source is monochromatic light, or a quasi-monochromatic light source or white light with a certain spectral bandwidth.
The utility model discloses confocal formation of image detection method of complete aplanatic simultaneously of looks proximal surface based on parallel flat board divides image, its characterized in that: the confocal imaging detection device comprises a CMOS or CCD camera, a telecentric imaging lens, a cubic beam splitting and image combining device, a semiconductor crystal grain and a transparent glass object stage for bearing the semiconductor crystal grain, wherein the CMOS or CCD camera, the telecentric imaging lens, the cubic beam splitting and image combining device, the semiconductor crystal grain and the transparent glass object stage are sequentially arranged in the light path direction; the side right-angle rotating image prism and the second glass parallel flat plate as well as the cubic beam splitting and image combining device are positioned on the optical axis of the telecentric imaging lens, meanwhile, a first right-angle surface of the side right-angle rotating image prism is opposite to a first surface of the cubic beam splitting and image combining device, a second right-angle surface of the side right-angle rotating image prism is opposite to the side surface of the semiconductor crystal grain, and the inclined surface of the side right-angle rotating image prism is obliquely arranged with the optical axis of the telecentric imaging lens; two right-angle surfaces of the skyhook right-angle rotating image prism are respectively opposite to the skyhook of the semiconductor crystal grain and the second surface of the cubic beam splitting and image combining device; the surface normal of the first glass parallel flat plate and the optical axis of the optical path form an included angle, the surface normal of the second glass parallel flat plate and the optical axis of the optical path form an included angle, a coaxial external illumination light source is arranged beside a fourth surface opposite to the second surface of the cubic beam splitting and imaging combiner, and the top surface and the side surface of the semiconductor crystal grain are subjected to confocal imaging on the sensor surface of the camera through a right-angle image rotating prism, the glass parallel flat plate and the cubic beam splitting and imaging combiner in a complete equal optical path respectively so as to obtain independent images of the two surfaces of the semiconductor crystal grain on a CMOS (complementary metal oxide semiconductor) or CCD; when in use, the utility model is used for cleaning the inner wall of the tank,
double-sided illumination light path:
the coaxial external illumination light source is divided into two illumination light beams when passing through the cubic beam splitter and combiner: a beam of light passes through the skyhook right-angle rotating prism and the first glass parallel flat plate and then illuminates the skyhook of the semiconductor crystal grain to be tested on the glass loading turntable; the other beam of illumination light illuminates the side surface of the semiconductor crystal grain to be tested after passing through the side surface right-angle relay prism and the second glass parallel plate, and the two beams of illumination light respectively illuminate two adjacent surfaces of the semiconductor crystal grain;
imaging detection light path:
two adjacent surfaces of the illuminated semiconductor crystal grain generate diffused light, an imaging light beam of the semiconductor crystal grain is incident on a first glass parallel plate with the thickness of t and the included angle alpha between the surface normal line and the optical axis through a zenith right-angle rotating image prism, and the imaging light beam emitted from the first glass parallel plate generates a displacement delta to one side of the optical axis1Then reflected by the cubic beam splitter and combiner to reach the reference output surface; the imaging light beam on the side of the semiconductor crystal grain is incident on a second glass parallel plate with the thickness of t and the included angle alpha between the surface normal and the optical axis through a side right-angle image rotating prism, and the imaging light beam emitted from the second glass parallel plate generates a displacement delta towards the other side of the optical axis2Then the light is transmitted by the cubic beam splitter and combiner to reach the reference output surface; intermediate image spacing of adjacent faces output from cubic beam-splitting image combiner is delta = delta1+δ2And images with independent two surfaces are respectively obtained on a CMOS or CCD camera.
The utility model discloses the advantage of device and method:
1) the device can realize the simultaneous complete aplanatic confocal imaging detection of two adjacent surfaces of the semiconductor crystal grain, namely delta =0, and the optical path difference of the imaging of the two adjacent surfaces is not compensated by using a large-depth-of-field telecentric lens;
2) the device has the advantages that the expected space separation delta of double-sided imaging can be obtained by using the glass parallel flat plate in the imaging light path, the double-image interval delta can be adjusted, and for the given thickness t of the glass parallel flat plate and the refractive index n of the glass, the size of the interval delta depends on the included angle alpha formed by the surface normal of the glass parallel flat plate and the optical axis;
3) the device can also use the angle fine adjustment of the glass parallel flat plate on the meridian and sagittal planes to correct and compensate the deviation of the relative space position of the double-sided imaging caused by the angle manufacturing error and the assembly error of the cubic prism or the right-angle relay prism;
4) the device adopts a common glass parallel flat plate and a CMOS or CCD camera, does not need to use a polarized optical element and a polarized CMOS sensor (camera) or a color camera and extra image processing thereof, can effectively reduce the cost of the detection device, and improves the cost performance and the detection efficiency of the detection device.
5) The device for simultaneously imaging and detecting the adjacent double surfaces of the semiconductor crystal grains has the advantages of simple and compact structure, easy assembly and debugging and good reliability.
Description of the drawings:
FIGS. 1-6 illustrate conventional semiconductor die adjacent surface detection optics;
wherein 1 is a black-and-white camera, 2 is a telecentric imaging lens, 3a or 3b is a rotating image prism, 3 is an image combination optical element, 4 is a semiconductor crystal grain, 5 is a transparent glass object stage, 6 or 6a or 6b is a rotating image prism, 7 or 7a and 7b are light sources, and 8 and 9 are optical filters;
fig. 7 is a schematic view of the inventive apparatus;
FIG. 8a is a schematic view of the adjustment of a parallel glass plate in a meridian plane;
FIG. 8b is a schematic view of the adjustment of the parallel glass plates in the sagittal plane;
fig. 9 is a schematic diagram of an embodiment of the device according to the present invention.
The specific implementation mode is as follows:
the utility model discloses the confocal formation of image detection device of complete aplanatic distance simultaneously of looks of parallel flat board based on CMOS or CCD camera 1 that sets gradually in the light path direction, telecentric imaging lens 2, cubic beam splitting closes like ware 3, semiconductor crystalline grain 6 and be used for holding the transparent glass objective table 7 of putting the semiconductor crystalline grain, it has the right angle reprint prism of world 4a, first glass parallel flat board 5a and side right angle reprint prism 4b, second glass parallel flat board 5b to be equipped with respectively in proper order on the light path between semiconductor crystalline grain 6 and cubic beam splitting closes like ware 3, side right angle reprint prism 4b and right angle reprint prism of world 4a are located the positive side portion and the right side of semiconductor crystalline grain directly over respectively, cubic beam splitting closes like ware 3 and first glass parallel flat board 5a, right angle reprint prism of world 4a is at same level; the side right-angle image-rotating prism 4b, the second glass parallel flat plate 5b and the cubic beam splitting and image combining device 3 are positioned on the optical axis A of the telecentric imaging lens, meanwhile, a first right-angle surface 401b of the side right-angle image-rotating prism is opposite to a first surface 301 of the cubic beam splitting and image combining device 3, a second right-angle surface 402b of the side right-angle image-rotating prism is opposite to the side surface of a semiconductor crystal grain, and an inclined surface 403b of the side right-angle image-rotating prism is obliquely arranged with the optical axis A of the telecentric imaging lens; two right- angle surfaces 401a and 402a of the skyhook right-angle relay prism are respectively opposite to the skyhook of the semiconductor crystal grain and the second surface 302 of the cubic beam splitting and image combining device; the normal line of the surface of the first glass parallel plate 5a forms an included angle alpha with the optical axis B of the optical path thereof, the normal line of the surface of the second glass parallel plate 5B forms an included angle alpha with the optical axis A of the optical path thereof, the side of the fourth face 304 opposite to the second face 302 of the cubic beam splitting image combiner is provided with a coaxial external illumination light source 8, the top face and the side face of the semiconductor crystal grain are respectively confocal imaged on the sensor face of the camera by the right-angle image rotating prisms 4a and 4B, the glass parallel plates 5a and 5B and the cubic beam splitting image combiner 3 in a complete equal optical path, so as to obtain respective independent images of the two faces of the semiconductor crystal grain on the CMOS or CCD.
The first and second glass parallel plates 5a and 5b in the imaging optical paths of the sky and the side face respectively have the effect of enabling double-sided imaging light beams to generate displacement delta towards the two sides of the center (optical axis) of the cubic beam splitter-combiner 31And delta2And delta1And delta2Is determined by the thickness t of the parallel plate, the refractive index n of the glass, and the angle alpha between the normal of the parallel plate surface and the optical axisx。
The images of the adjacent faces of the semiconductor crystal grains output from the image combiner 3 are spatially separated and the image interval is δ = δ1+δ2。
Due to the deviation of the relative spatial position of the two-sided image due to the angle error and the assembly error of the cube prism or the rectangular relay prism, the alpha of the included angle between the normal of the parallel flat plate surface and the optical axis can be finely adjusted in the meridian plane (y-z plane, z axis along the optical axis direction)xε to correct the compensation, as shown in FIG. 8 a; similarly, the included angle alpha between the normal of the parallel flat plate surface and the optical axis can be finely adjusted in the sagittal plane (x-z plane)yε to correct the compensation, as shown in FIG. 8 b.
The distance between the center of the cubic beam splitter and combiner 3 and the center of the inclined plane of the side right-angle relay prism 4b is D/2+ D, the distance between the cubic beam splitter and combiner 3 and the inclined plane of the top right-angle relay prism 4a is D/2+ D, the working distance WD of the side imaging optical path is = D/2+ D/2, the working distance WD of the top imaging optical path is = WD = D/2+ D/2, D is the width of the transparent glass objective table, and D is the side length of the right-angle prism; the semiconductor crystal grain top imaging optical path working distance WD = D/2+ D/2=30mm, and the side imaging optical path working distance WD = D/2+ D/2=30 mm.
As shown in fig. 9, the first and second glass parallel plates have a thickness t =5.83mm, an angle α =25 ° between the normal of the glass parallel plate surface and the optical axis, and the plate glass material K9, and the distance δ =1.8mm between the two-sided images is calculated.
The size of the right-angle transfer prism of the top surface is 15 × 15mm, the size of the right-angle transfer prism of the side surface is 15 × 15mm, and the size of the cubic beam splitter/combiner is 15 × 15 mm; the centers of the reflecting surfaces of the two right-angle relay prisms are connected with the center of the semiconductor crystal grain to form a square symmetrical light path structure with the size of 37.5x 37.5 mm.
The coaxial external illumination light source is monochromatic light, or can also be a quasi-monochromatic light source or white light with a certain spectral bandwidth.
The cubic beam splitting and image combining device is a cubic beam splitting prism formed by two identical right-angle prisms, has the functions of a beam splitter in an illumination light path and an image combining device in an imaging light path, and is cubic in shape, so the cubic beam splitting and image combining device is named as a cubic beam splitting and image combining device; the transmission and reflection ratio of the prism is 50% plated on the inclined plane of a right-angle prism: 50% of light splitting film, and the inclined planes of the two right-angle reflecting prisms are glued.
The utility model discloses the confocal formation of image detection method of complete aplanatic distance simultaneously of looks adjacent surface based on parallel flat board branch, the confocal formation of image detection device of complete aplanatic distance simultaneously of looks adjacent surface based on parallel flat board branch includes CMOS or CCD camera, telecentric imaging lens, cubic beam splitting closes like ware, semiconductor crystalline grain and the transparent glass objective table that is used for holding semiconductor crystalline grain that sets gradually in the light path direction, be equipped with sky face right angle reprint prism, first glass parallel flat board and side right angle reprint prism, the second glass parallel flat board respectively in proper order in the light path between semiconductor crystalline grain and cubic beam splitting closes like ware, side right angle reprint prism and sky face right angle reprint prism are located the positive side portion and the sky face of semiconductor crystalline grain directly over respectively, cubic beam splitting closes like ware and first glass parallel flat board, sky face right angle reprint prism like at same level; the side right-angle rotating image prism and the second glass parallel flat plate as well as the cubic beam splitting and image combining device are positioned on the optical axis of the telecentric imaging lens, meanwhile, a first right-angle surface of the side right-angle rotating image prism is opposite to a first surface of the cubic beam splitting and image combining device, a second right-angle surface of the side right-angle rotating image prism is opposite to the side surface of the semiconductor crystal grain, and the inclined surface of the side right-angle rotating image prism is obliquely arranged with the optical axis of the telecentric imaging lens; two right-angle surfaces of the skyhook right-angle rotating image prism are respectively opposite to the skyhook of the semiconductor crystal grain and the second surface of the cubic beam splitting and image combining device; the surface normal of the first glass parallel flat plate and the optical axis of the optical path form an included angle, the surface normal of the second glass parallel flat plate and the optical axis of the optical path form an included angle, a coaxial external illumination light source is arranged beside a fourth surface opposite to the second surface of the cubic beam splitting and imaging combiner, and the top surface and the side surface of the semiconductor crystal grain are subjected to confocal imaging on the sensor surface of the camera in a complete aplanatism way through a right-angle image rotating prism and the cubic beam splitting and imaging combiner respectively so as to obtain independent images of the two surfaces of the semiconductor crystal grain on a CMOS (complementary metal oxide semiconductor) or CCD (; when in use, the utility model is used for cleaning the inner wall of the tank,
double-sided illumination light path:
the coaxial external illumination light source is divided into two illumination light beams when passing through the cubic beam splitter and combiner: a beam of light passes through the skyhook right-angle rotating prism and the first glass parallel flat plate and then illuminates the skyhook of the semiconductor crystal grain to be tested on the glass loading turntable; the other beam of illumination light illuminates the side surface of the semiconductor crystal grain to be tested after passing through the side surface right-angle relay prism and the second glass parallel plate, and the two beams of illumination light respectively illuminate two adjacent surfaces of the semiconductor crystal grain;
imaging detection light path:
two adjacent surfaces of the illuminated semiconductor crystal grain generate diffused light, an imaging light beam of the semiconductor crystal grain is incident on a first glass parallel plate with the thickness of t and the included angle alpha between the surface normal line and the optical axis through a zenith right-angle rotating image prism, and the imaging light beam emitted from the first glass parallel plate generates a displacement delta to one side of the optical axis1Then reflected by the cubic beam splitter and combiner to reach the reference output surface;the imaging light beam on the side of the semiconductor crystal grain is incident on a second glass parallel plate with the thickness of t and the included angle alpha between the surface normal and the optical axis through a side right-angle image rotating prism, and the imaging light beam emitted from the second glass parallel plate generates a displacement delta towards the other side of the optical axis2Then the light is transmitted by the cubic beam splitter and combiner to reach the reference output surface; intermediate image spacing of adjacent faces output from cubic beam-splitting image combiner is delta = delta1+δ2And images with independent two surfaces are respectively obtained on a CMOS or CCD camera.
The utility model discloses the advantage of device and method:
1) the device can realize the simultaneous complete aplanatic confocal imaging detection of two adjacent surfaces of the semiconductor crystal grain, namely delta =0, and the optical path difference of the imaging of the two adjacent surfaces is not compensated by using a large-depth-of-field telecentric lens;
2) the device has the advantages that the expected space separation delta of double-sided imaging can be obtained by using the glass parallel flat plate in the imaging light path, the double-image interval delta can be adjusted, and for the given thickness t of the glass parallel flat plate and the refractive index n of the glass, the size of the interval delta depends on the included angle alpha formed by the surface normal of the glass parallel flat plate and the optical axis;
3) the device can also use the angle fine adjustment of the glass parallel flat plate on the meridian and sagittal planes to correct and compensate the deviation of the relative space position of the double-sided imaging caused by the angle manufacturing error and the assembly error of the cubic prism or the right-angle relay prism;
4) the device adopts a common glass parallel flat plate and a CMOS or CCD camera, does not need to use a polarized optical element and a polarized CMOS sensor (camera) or a color camera and extra image processing thereof, can effectively reduce the cost of the detection device, and improves the cost performance and the detection efficiency of the detection device.
5) The device for simultaneously imaging and detecting the adjacent double surfaces of the semiconductor crystal grains has the advantages of simple and compact structure, easy assembly and debugging and good reliability.
Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention and not for limiting the same; although the present invention has been described in detail with reference to preferred embodiments, it should be understood by those skilled in the art that: the invention can be modified or equivalent substituted for some technical features; without departing from the spirit of the present invention, it should be understood that the scope of the claims is intended to cover all such modifications and variations.
Claims (5)
1. A complete aplanatic confocal imaging detection device based on parallel flat-plate image-splitting adjacent surfaces is characterized in that: the device comprises a CMOS or CCD camera, a telecentric imaging lens, a cubic beam splitting and image combining device, a semiconductor crystal grain and a transparent glass objective table for bearing the semiconductor crystal grain, wherein the CMOS or CCD camera, the telecentric imaging lens, the cubic beam splitting and image combining device, the semiconductor crystal grain and the transparent glass objective table are sequentially arranged in the light path direction; the side right-angle rotating image prism and the second glass parallel flat plate as well as the cubic beam splitting and image combining device are positioned on the optical axis of the telecentric imaging lens, meanwhile, a first right-angle surface of the side right-angle rotating image prism is opposite to a first surface of the cubic beam splitting and image combining device, a second right-angle surface of the side right-angle rotating image prism is opposite to the side surface of the semiconductor crystal grain, and the inclined surface of the side right-angle rotating image prism is obliquely arranged with the optical axis of the telecentric imaging lens; two right-angle surfaces of the skyhook right-angle rotating image prism are respectively opposite to the skyhook of the semiconductor crystal grain and the second surface of the cubic beam splitting and image combining device; the surface normal of the first glass parallel flat plate and the optical axis of the optical path form an included angle, the surface normal of the second glass parallel flat plate and the optical axis of the optical path form an included angle, a coaxial external illumination light source is arranged beside a fourth surface opposite to the second surface of the cubic beam splitting and imaging combiner, and the top surface and the side surface of the semiconductor crystal grain are subjected to confocal imaging on the sensor surface of the camera through a right-angle image rotating prism, the glass parallel flat plate and the cubic beam splitting and imaging combiner in a complete equal optical path respectively so as to obtain independent images of the two surfaces of the semiconductor crystal grain on a CMOS or CCD camera.
2. The complete aplanatic confocal imaging detection device based on the parallel flat-plate image splitting adjacent surfaces as claimed in claim 1, wherein: the distance between the center of the cubic beam splitting image combiner and the center of the inclined plane of the side right-angle relay prism is D/2+ D, the cubic beam splitting image combiner and the inclined plane of the top right-angle relay prism are on the same horizontal height, the distance between the cubic beam splitting image combiner and the inclined plane of the top right-angle relay prism is D/2+ D, the working distance WD of a side imaging light path is = D/2+ D/2, the working distance WD of the top imaging light path is = WD = D/2+ D/2, D is the width of a transparent glass object stage, and D is the; the semiconductor crystal grain top imaging optical path working distance WD = D/2+ D/2=30mm, and the side imaging optical path working distance WD = D/2+ D/2=30 mm.
3. The complete aplanatic confocal imaging detection device based on the parallel flat-plate partial image adjacent surfaces as claimed in claim 1 or 2, wherein: the thickness t =5.83mm of the first and second glass parallel plates, the included angle alpha =25 degrees between the normal of the glass parallel plate surface and the optical axis, the plate glass material is K9, and the calculated interval delta =1.8mm of the two-sided image.
4. The complete aplanatic confocal imaging detection device based on the parallel flat-plate image splitting adjacent surfaces as claimed in claim 1, wherein: the size of the top right-angle transfer prism is 15 × 15mm, the size of the side right-angle transfer prism is 15 × 15mm, and the size of the cubic beam splitter/combiner is 15 × 15 mm; the centers of the reflecting surfaces of the two right-angle relay prisms are connected with the center of the semiconductor crystal grain to form a square symmetrical light path structure with the size of 37.5x 37.5 mm.
5. The complete aplanatic confocal imaging detection device based on the parallel flat-plate image splitting adjacent surfaces as claimed in claim 1, wherein: the coaxial external illumination light source is monochromatic light, or a quasi-monochromatic light source or white light with a certain spectral bandwidth.
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