CN212808013U - Equal optical path imaging detection device for crystal grain adjacent surface of similar Michelson interferometer structure - Google Patents

Equal optical path imaging detection device for crystal grain adjacent surface of similar Michelson interferometer structure Download PDF

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CN212808013U
CN212808013U CN202021549292.1U CN202021549292U CN212808013U CN 212808013 U CN212808013 U CN 212808013U CN 202021549292 U CN202021549292 U CN 202021549292U CN 212808013 U CN212808013 U CN 212808013U
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angle
prism
parallel plate
optical path
imaging
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郑恒
陈武
颜少彬
段亚凡
廖廷俤
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Quanzhou Normal University
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Quanzhou Normal University
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Abstract

本实用新型提供一种类迈克尔逊干涉仪结构的晶粒相邻面等光程成像检测装置,包括光源、纵向同轴设置的相机、远心成像镜头、半透半反射平行平板合像器以及玻璃载物转盘、半导体晶粒,半透半反射平行平板合像器同一水平高度设置有平行平板补偿器及位于半导体晶粒正上方的天面直角转向棱镜,半导体晶粒同一水平高度与半透半反射平行平板合像器正下方设置有侧面直角转向棱镜,该装置在满足双面成像完全等光程共焦的条件下,获得相邻面的空间分离成像,能通过调节平行平板补偿器与光轴的夹角来校正补偿误差,从而可以实现半导体晶粒相邻双面同时完全等光程共焦成像检测,结构简单紧凑,装配调试容易,可靠性佳。

Figure 202021549292

The utility model provides a Michelson-like interferometer-like optical path imaging detection device for adjacent surfaces of crystal grains, comprising a light source, a longitudinally coaxially arranged camera, a telecentric imaging lens, a semi-transparent and semi-reflective parallel plate image combiner and a glass The loading turntable, semiconductor die, and transflective parallel plate image combiner are provided at the same level with a parallel plate compensator and a right-angle steering prism located directly above the semiconductor die. A side right-angle turning prism is installed directly below the reflective parallel plate image combiner. The device can obtain spatially separated imaging of adjacent surfaces under the condition that the double-sided imaging is completely equal optical path confocality. By adjusting the parallel plate compensator and the light The included angle of the axis is used to correct the compensation error, so that the confocal imaging detection of the adjacent two sides of the semiconductor die can be realized at the same time with the same optical path. The structure is simple and compact, the assembly and debugging are easy, and the reliability is good.

Figure 202021549292

Description

Equal optical path imaging detection device for crystal grain adjacent surface of similar Michelson interferometer structure
Technical Field
The utility model relates to a class michelson interferometer structure's equal optical distance formation of image detection device of crystalline grain looks proximal surface.
Background
The complete aplanatic confocal imaging of the crystal grain double-sided imaging detection light path of the semiconductor refrigeration device is one of the main core technical problems for obtaining double-sided simultaneous defect detection. Based on different detection devices and methods, the research of the prior semiconductor crystal grain adjacent double-sided simultaneous defect imaging detection technology has related patent applications:
as shown in fig. 1: utility model patent application No. 202010171706.0X, patent application name: the optical detection device and the method well solve the problem of quasi-confocal imaging detection of the adjacent surfaces of the semiconductor crystal grains, but an optical path difference still exists between the adjacent double-sided imaging optical paths. To obtain simultaneous confocal imaging of adjacent surfaces, it is necessary to compensate for this small optical path difference by selecting a telecentric imaging lens with a sufficiently large depth of field. Therefore, a new approach for complete aplanatic confocal imaging detection of the adjacent surfaces of the crystal grains is necessary.
As shown in fig. 2: utility model patent application number is 202010191734.8, patent application name: a novel crystal grain double-surface simultaneous aplanatic confocal imaging detection method based on time difference resolution provides a novel method for realizing complete aplanatic confocal imaging detection of adjacent surfaces of semiconductor crystal grains by using a single-group imaging system based on a time difference resolution imaging method.
As shown in fig. 3: the patent application name: the utility model discloses a device and a method for crystal grain double-sided simultaneous aplanatic confocal imaging detection based on a bicolor separation imaging method, and the utility model discloses patent application number is 202010203153.1, provides a novel method for semiconductor crystal grain adjacent surface simultaneous complete aplanatic confocal imaging detection based on a bicolor separation imaging method.
As shown in fig. 4: utility model patent application number is 202010250856.X, patent application name: a device and a method for crystal grain double-face simultaneous complete aplanatic confocal imaging detection based on a polarization separation imaging method use a polarization beam splitter to obtain two beams of illumination beams with mutually vertical polarization directions to respectively illuminate two adjacent faces of a semiconductor crystal grain to be detected. Further provides a method based on polarized light separation imaging (polarization split imaging for short), and a device and a method for realizing simultaneous and complete aplanatic confocal imaging detection of adjacent surfaces of semiconductor crystal grains by using a polarization camera.
As shown in fig. 5: the utility model discloses a patent application number is 202010296134.8, and the patent name is for using polarization to divide the image method to realize the confocal device and the method of the two-sided aplanatic confocal detection of crystalline grain simultaneously, proposes a principle still based on polarized light separation formation of image (being called for short "polarization branch image"), combines "polarization branch image prism subassembly" and uses ordinary CMOS or CCD camera to realize the confocal formation of image of the adjacent surface aplanatic confocal detection of semiconductor crystalline grain simultaneously.
In the various detection devices, a polarization optical element or a polarization CMOS sensor is generally used, and the structure or the use is slightly complicated, the cost is high, and the error compensation capability of realizing the aplanatic and double-sided separation imaging detection at the same time is insufficient.
SUMMERY OF THE UTILITY MODEL
The utility model discloses improve above-mentioned problem, promptly the to-be-solved technical problem of the utility model is that the confocal formation of image of complete aplanatic distance of present design detects the cost higher, and error compensation ability is not enough.
The utility model discloses a concrete implementation scheme is: the aplanatic imaging detection device of the crystal grain adjacent surface of the similar Michelson interferometer structure comprises a CMOS or CCD camera, a telecentric imaging lens, a semi-transparent and semi-reflective parallel flat plate image combiner, a glass carrying turntable and a semiconductor crystal grain arranged on the glass carrying turntable, which are sequentially arranged in the light path direction, a skyhook right-angle image rotating prism, a parallel flat plate compensator and a side right-angle image turning prism are respectively and sequentially arranged on the light path between the semiconductor crystal grain and the semi-transparent and semi-reflective parallel flat plate image combiner, the side right-angle image rotating prism and the skyhook right-angle image rotating prism are respectively positioned at the right side part of the semiconductor crystal grain and right above the skyhook, the skyhook right-angle image turning prism, the parallel flat plate compensator and the semi-transparent and semi-reflective parallel flat plate image combiner are positioned at the same horizontal height, and the side right-angle image rotating prism and the, meanwhile, a first right-angle surface of the side right-angle image-rotating prism is opposite to a first surface of the semi-transparent semi-reflective parallel flat-plate image combiner, a second right-angle surface of the side right-angle image-rotating prism is opposite to the side surface of the semiconductor crystal grain, and an inclined surface of the side right-angle image-rotating prism is obliquely arranged with an optical axis of the telecentric imaging lens;
two right-angle surfaces of the skyhook right-angle rotating image prism are respectively opposite to the skyhook of the semiconductor crystal grain and the second surface of the semi-transparent semi-reflective parallel flat-plate image combiner; a coaxial external illumination light source is arranged at the side of the semi-transparent semi-reflective parallel flat-plate image combiner departing from the second surface;
the light source is separated into a horizontal first light path and a longitudinal second light path by the semi-transmitting and semi-reflecting parallel flat-plate image combiner, and the first light path illuminates the skyward of the semiconductor crystal grain positioned on the glass loading turntable after passing through the first right-angle rotating image prism; the second light path illuminates the side surface of the semiconductor crystal grain to be tested after passing through a second right-angle image conversion prism;
imaging light beams of the semiconductor crystal grain skyward are incident on the parallel flat plate compensator through the first right-angle rotating image prism, are emitted in parallel through the parallel flat plate compensator to generate s displacement, and are reflected by the semi-transparent semi-reflective parallel flat plate image combiner to reach the reference output surface;
the imaging light beam on the side surface of the semiconductor crystal grain is reflected and turned by the second right-angle turning prism and then transmitted by the semi-transparent semi-reflective parallel flat plate image combiner to reach the reference output surface; the camera obtains images of the two faces independently.
Furthermore, the prism right-angle side length D of the top right-angle turning prism is the same as that of the side right-angle turning prism, the semiconductor crystal grain is positioned at the center of the glass carrying turntable, the center of the semi-transparent semi-reflective parallel flat-plate image combiner, the center of the reflection surface of the top right-angle turning prism and the side right-angle turning prism are connected with the center of the semiconductor crystal grain to form a square symmetrical light path structure with the side length of D/2+ D, and D is the center of the transparent glass carrying table width glass carrying turntable.
Furthermore, the distance between the center of the semi-transparent and semi-reflective parallel flat plate image combiner and the center of the side right-angle turning prism inclined plane is D/2+ D, the imaging optical path working distance WD of the side surface of the semiconductor crystal grain is = D/2+ D/2, the distance between the semi-transparent and semi-reflective parallel flat plate image combiner and the inclined plane of the skyhook right-angle turning prism is D/2+ D, and the imaging optical path working distance WD of the skyhook of the semiconductor crystal grain is = D/2+ D/2 on the same horizontal height.
Further, the size of the top right-angle relay prism is 15 × 15mm, and the size of the side right-angle relay prism is 15 × 15 mm.
Further, the parallel plate compensator produces a double image separation s = 1.5mm, the focal length f =51.5mm, and WD =110 mm.
Furthermore, the thickness of the parallel plate compensator is 6.5mm, the included angle between the normal line and the optical axis is 12 degrees, and the parallel plate compensator is made of K9 glass.
Further, the coaxial external illumination light source is monochromatic light, or a quasi-monochromatic light source or white light with a certain spectral bandwidth.
Compared with the prior art, the utility model discloses following beneficial effect has: the application provides a novel device and a method for complete aplanatic confocal imaging detection of adjacent surfaces based on a Michelson-like interferometer structure, and spatial separation of adjacent double-sided imaging is realized by adopting double-glass parallel flat plates in adjacent double-sided imaging light paths. The novel device can obtain the simultaneous complete aplanatic confocal imaging detection of two adjacent surfaces of the semiconductor crystal grain, does not need to use a polarizing optical element and a polarizing CMOS sensor (camera), and effectively reduces the cost of the detection device.
1) The device is a double-parallel flat plate structure based on a similar Michelson interferometer structure, can realize the simultaneous complete aplanatic confocal imaging detection of two adjacent surfaces of a semiconductor crystal grain, and has simple structure and easy installation and adjustment;
2) the double-image separation distance s can be increased or decreased by adjusting the included angle between the parallel flat plate compensator and the optical axis in the imaging optical path of the device, and the influence on the optical path difference is small; the generated micro optical path difference can be compensated by the depth of field of the telecentric imaging lens.
3) The imaging optical path of the device can compensate and change the included angle between the parallel flat plate compensator 7 and the optical axis and the original tiny optical path difference of the mechanism by replacing the parallel flat plate compensator with different thicknesses, thereby realizing the simultaneous complete aplanatic confocal imaging detection of the two adjacent surfaces of the semiconductor crystal grains.
4) The device can also correct and compensate the tiny optical path difference caused by the angle manufacturing error and the assembly error of the semi-transmission and semi-reflection parallel flat plate image synthesizer or the right-angle rotating image prism by adjusting the included angle between the parallel flat plate compensator and the optical axis.
5) The device adopts a common parallel flat plate compensator, a parallel flat plate image combiner and a CMOS or CCD camera, does not need to use a polarization optical element and a polarization CMOS sensor (camera), and simultaneously has stronger functions of double-sided image splitting and manufacturing error compensation. The device can effectively reduce the cost of the detection device and improve the cost performance of the detection device.
6) The device for simultaneously imaging and detecting the adjacent double surfaces of the semiconductor crystal grains has the advantages of simple and compact structure, easy assembly and debugging and good reliability.
Drawings
FIGS. 1-5 illustrate conventional semiconductor die adjacent surface detection optics;
in the figure, 1 is a black-and-white camera, 2 is a telecentric imaging lens, 3 is a cubic beam splitter, 4 is a semiconductor crystal grain, 5 is a transparent glass objective table, 6 or 6a or 6b is a rotating image prism, 7 or 7a or 7b is a light source, and 8 and 9 are optical filters; 8a is a polarizing prism; 8b is a roof prism; and 8c is a trigger signal controller.
Fig. 6 is a detection device of the present patent application.
FIG. 7 is a schematic diagram of the rotation of the parallel plate compensator according to the present invention.
Fig. 8 is a design example of the present patent application.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
As shown in fig. 6-8, the equal optical path imaging detection device of crystal grain adjacent surface of michelson interferometer structure comprises a CMOS or CCD camera 1, a telecentric imaging lens 2, a semi-transparent and semi-reflective parallel plate image combiner 3, a glass carrying turntable 5 and a semiconductor crystal grain 6 arranged on the glass carrying turntable in turn in the optical path direction, a zenith right-angle rotating prism 4a, a parallel plate compensator 7 and a side right-angle rotating prism 4b are respectively arranged in turn on the optical path between the semiconductor crystal grain 6 and the semi-transparent and semi-reflective parallel plate image combiner, the side right-angle rotating prism and the zenith right-angle rotating prism are respectively positioned on the front side of the semiconductor crystal grain and right above the zenith, the zenith right-angle rotating prism and the parallel plate compensator 7, the semi-transparent and semi-reflective parallel plate image combiner are positioned at the same horizontal height, the side right-angle rotating prism and the semi-transparent reflective parallel plate image combiner are positioned on the optical axis of the telecentric imaging lens 2, meanwhile, a first right-angle surface 401b of the side right-angle image-rotating prism is opposite to a first surface 301 of the semi-transparent semi-reflective parallel flat-plate image combiner, a second right-angle surface 402b of the side right-angle image-rotating prism is opposite to the side surface of the semiconductor crystal grain, and an inclined surface 403b of the side right-angle image-rotating prism is obliquely arranged with the optical axis of the telecentric imaging lens;
two right-angle surfaces of the skyhook right-angle rotating image prism are respectively opposite to the skyhook of the semiconductor crystal grain and the second surface 302 of the semi-transparent semi-reflective parallel flat-plate image combiner; the semi-transparent semi-reflective parallel flat-plate image combiner is provided with a coaxial external illumination light source 8 at the side departing from the second surface 302, namely the first surface 301;
the illumination light source 8 is separated into a horizontal first light path and a longitudinal second light path when passing through the semi-transparent semi-reflective parallel flat plate image combiner 3, and the first light path illuminates the skyward of the semiconductor crystal grain 6 of the glass loading turntable after passing through the parallel flat plate compensator 7 and the first right-angle rotating image prism; the second light path illuminates the side surface of the semiconductor crystal grain 6 to be tested after passing through a second right-angle image-rotating prism, two beams of illumination light respectively illuminate two adjacent surfaces of the semiconductor crystal grain 6, and enough illumination conditions are provided for simultaneous imaging of the two surfaces of the crystal grain;
imaging detection light path:
two adjacent surfaces of a semiconductor crystal grain 6 illuminated by a light source generate diffused light, an imaging light beam on the top surface of the semiconductor crystal grain is incident on a parallel flat plate compensator 7 with a certain thickness through a top right-angle rotating image prism 4a, is emitted in parallel through the parallel flat plate compensator 7 to generate s displacement, and is reflected by a semi-transmitting and semi-reflecting parallel flat plate image combiner 3 to reach a reference output surface; the imaging light beam on the side of the semiconductor crystal grain is reflected and turned by the side straight angle turning prism 4b, and then is transmitted by the semi-transparent semi-reflective parallel flat plate image combiner 3 to reach the reference output surface; the CMOS or CCD camera can respectively obtain independent images on two surfaces.
The illumination light source 8 for parallel light beam incidence on the right side of the semi-transparent semi-reflective parallel flat-plate image combiner 3 or the illumination light source 8 arranged at the front ends of the right-angle image-rotating prisms 4a and 4b on the top surface and the side surface can be monochromatic light, or can be quasi-monochromatic light source or white light with a certain spectral bandwidth.
The side length of the prism right-angle side of the top right-angle turning prism is the same as that of the side right-angle turning prism, the glass carrying turntable is circular, the semiconductor crystal grain is positioned in the center of the glass carrying turntable, the center of the semi-transparent semi-reflective parallel flat plate image combiner, the center of the reflection surface of the top right-angle turning prism and the side right-angle turning prism are connected with the center of the semiconductor crystal grain to form a square symmetrical light path structure with the side length of D/2+ D, and D is the center of the transparent glass carrying table width glass carrying turntable.
The distance between the center of the semi-transmissive and semi-reflective parallel flat plate image combiner and the center of the inclined plane of the side right-angle turning prism is D/2+ D, the working distance WD of an imaging light path on the side surface of the semiconductor crystal grain is = D/2+ D/2, the semi-transmissive and semi-reflective parallel flat plate image combiner and the inclined plane of the skyhook right-angle turning prism are on the same horizontal height, the distance D/2+ D is between the semi-transmissive and semi-reflective parallel flat plate image combiner and the inclined plane of the skyhook right-angle turning prism.
The parallel plate compensator 7 makes the semiconductor crystal grain 6 plane imaging light beam generate a parallel displacement s, the size of s depends on the thickness t of the parallel plate compensator 7, the thickness of the semi-transparent semi-reflective parallel plate image combiner 3 is the glass refractive index n1 and the included angle theta 1 between the normal line of the parallel plate compensator 7 surface and the optical axis.
And respectively obtaining complete aplanatic confocal imaging detection of the separation of the top surface and the side surface of the semiconductor crystal grain by using a common CMOS or CCD camera.
In this embodiment, the present invention provides a design embodiment of a front prism image-rotating subsystem of a semiconductor crystal grain adjacent surface simultaneous complete aplanatic confocal imaging detection device.
1) In this embodiment, the length and width of the rectangular relay prism for the top surface of the semiconductor crystal grain is 15 × 15mm, the length and width of the rectangular relay prism for the side surface of the semiconductor crystal grain is 15 × 15mm, and the width of the transparent glass stage is 45 mm.
2) The semi-transmitting and semi-reflecting parallel flat-plate image combiner 3 center, the reflection surface centers of the right-angle rotating image prisms 4a and 4b and the semiconductor crystal grain center are connected to form a square symmetrical optical path structure with the side length of D/2+ D =37.5 mm.
3) The semi-transparent semi-reflective parallel flat plate image combiner 3 has the side length of 15mm and the thickness of 6mm, and is parallel to the hypotenuse of the skyhook right-angle relay prism and the side right-angle relay prism.
4) The side imaging optical path working distance WD = D/2+ D/2=30mm, and the top imaging optical path working distance WD = D/2+ D/2=30 mm.
As shown in fig. 7, the thickness of the parallel plate compensator 7 is t, the included angle between the normal line of the parallel plate compensator and the optical axis of the incident light is θ, and the included angle between the normal line of the parallel plate compensator and the optical axis of the emergent light is θ'; theta 1 is an included angle between the normal of the parallel flat plate compensator, the normal of the semi-transparent and semi-inverse parallel flat plate image combiner and an incident light axis, and is an initial state of the Michelson-like interferometer structure when the angle is 45 degrees, and theta 1' is an included angle between the normal of the parallel flat plate compensator, the normal of the semi-transparent and semi-inverse parallel flat plate image combiner and an emergent light axis; theta 2 is an included angle between a normal line of the parallel flat plate compensator in the device after rotation and an optical axis of incident light, and is a state of a Michelson interferometer-like structure with a slight change, and theta 2' is an included angle between the normal line of the parallel flat plate compensator in the device after rotation and an optical axis of emergent light.
When the angle between the parallel plate compensator 7 and the optical axis is 45 °, the absolute values of the imaging separation distance and the optical path difference are both 0, and when the deflection angle deviates from 45 °, the absolute values of the imaging separation distance and the optical path difference are larger. If the imaging separation distance is greater than 1.5mm, the angle of incidence is approximately <14 ° or >64 °; it can be known from observation that when the deflection angle of the parallel flat plate compensator 7 is deflected toward a direction smaller than 45 °, the absolute value of the optical path difference is changed more slowly than when the deflection angle is deflected toward a direction having an incident angle larger than 45 °, so that the scheme of selecting the deflection angle of the parallel flat plate compensator 7 smaller than 14 ° is reasonable, and the optical path difference is-0.65 mm at this time. The system can meet the requirement of double-sided imaging separation, can make the optical path difference small, and is suitable for an optical device for double-sided detection and simultaneous imaging.
The relation between the thickness of the parallel flat plate compensator and the optical path difference is as follows:
the incident angle of the parallel flat plate compensator 7 is 45 degrees as a design reference, the mechanism position aplanatism (the point O is coincident with the point O ') of the device is ensured, and the thickness t of the parallel flat plate compensator 7 is changed to be t':
if only the thickness of the parallel plate compensator 7 is changed and the incident angle is not changed, the emergent angle is only related to the incident angle and the refractive index
θ1=θ2=45°,θ1’=θ2’,n1*sinθ1’=n*sinθ1(n=1)
The distance s between the center points of the two clear images:
s = t4-t2 =t’*sin(θ2-θ2’)/cosθ2’ - t*sin(θ1-θ1’)/cosθ1’
=(t’-t)*sin(θ1-θ1’)/cosθ1’
the optical path difference can be expressed as:
thickness t optical path of original parallel flat plate compensator: Δ 1= IJ × n1+ JP + PO
The thickness t' of the existing parallel plate compensator is as follows: Δ 2= IJ '. n1+ J' O '+ O' P
Δ1-Δ2=IJ*n1+JP+PO -(IJ’*n1+J’O’+O’P)
Wherein x1= IJ, x2= IJ ', J' O '= t3-t1+ JP, O' P = OP = t4-t2
=x1*n1+(t4-t2)-x2*n1-(t3-t1)- (t4-t2)
=x1*n1 – x2*n1-(t3-t1)
=t*n1/cosθ1’–(t’-t)*cos(θ1-θ1’)/cosθ1’
The parameters t1, t2, t3 and t4 are shown in fig. 7 and can be calculated according to geometric relations.
As can be seen from the above, when the thickness of the parallel plate compensator 7 is changed, the variation of the image separation distance and the optical path difference is in a negative relationship. When the thickness of the parallel flat plate compensator 7 is changed to be larger, the image of the sky surface is separated to the left side more, and the optical path difference is linearly increased towards the negative direction; when the thickness of the parallel flat plate compensator 7 is changed to be smaller, the image of the sky surface is separated to the right side more, and the optical path difference is linearly increased to the positive direction.
To sum up, the conclusion that the separation distance is increased by changing the incident angle of the parallel plate compensator 7 is that when the parallel plate compensator 7 is deflected in the direction of less than 45 °, the thickness of the parallel plate compensator 7 can be reduced, and when the deflected angle is deflected in the direction of more than 45 °, the thickness of the parallel plate compensator 7 can be increased, thereby achieving the purpose of reducing the optical path difference and increasing the imaging separation distance.
To make the distance of the dual image separation large enough and the optical path difference as small as possible, the present embodiment provides the following three placement schemes of the parallel plate compensator satisfying the following conditions:
a) the thickness of the parallel flat plate compensator 7 is 6mm, the included angle between the normal line and the optical axis is 14 degrees, the parallel flat plate compensator is made of K9 glass, and the optical path difference of the double images of the scheme is 0.65 mm.
b) The thickness of the parallel flat plate compensator 7 is 6.2mm, the included angle between the normal line and the optical axis is 19 degrees, the parallel flat plate compensator is made of K9 glass, a turning prism of the skyhook mechanism needs to be adjusted downwards by 0.26mm, and the optical path difference of double images of the scheme is zero.
c) The thickness of the parallel flat plate compensator 7 is 6.5mm, the included angle between the normal line and the optical axis is 12 degrees, the parallel flat plate compensator is made of K9 glass, and the optical path difference of the double images in the scheme is zero.
5) The angle displacement error of the double images generated by the angle tolerance (less than or equal to 30 arc seconds) of the semi-transmitting and semi-reflecting parallel flat plate image combiner 3, the parallel flat plate compensator 7 and the right-angle relay prism is controlled within 2 arc minutes.
Any technical solution disclosed in the present invention is, unless otherwise stated, disclosed a numerical range if it is disclosed, and the disclosed numerical range is a preferred numerical range, and any person skilled in the art should understand that: the preferred ranges are merely those values which are obvious or representative of the technical effect which can be achieved. Because numerical value is more, can't be exhaustive, so the utility model discloses just disclose some numerical values with the illustration the technical scheme of the utility model to, the numerical value that the aforesaid was enumerated should not constitute right the utility model discloses create the restriction of protection scope.
If the terms "first," "second," etc. are used herein to define parts, those skilled in the art will recognize that: the terms "first" and "second" are used merely to distinguish one element from another in a descriptive sense and are not intended to have a special meaning unless otherwise stated.
In addition, the terms used in any aspect of the present disclosure as described above to indicate positional relationships or shapes include similar, analogous, or approximate states or shapes unless otherwise stated.
The utility model provides an arbitrary part both can be assembled by a plurality of solitary component parts and form, also can be the solitary part that the integrated into one piece technology was made.
Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention and not for limiting the same; although the present invention has been described in detail with reference to preferred embodiments, it should be understood by those skilled in the art that: the invention can be modified or equivalent substituted for some technical features; without departing from the spirit of the present invention, it should be understood that the scope of the claims is intended to cover all such modifications and variations.

Claims (7)

1.类迈克尔逊干涉仪结构的晶粒相邻面等光程成像检测装置,其特征在于,包括在光路方向上依次设置的CMOS或CCD相机、远心成像镜头、半透半反射平行平板合像器以及玻璃载物转盘、置于玻璃载物转盘上的半导体晶粒,在半导体晶粒与半透半反射平行平板合像器之间的光路上分别依次设有天面直角转像棱镜、平行平板补偿器和侧面直角转向棱镜,侧面直角转像棱镜和天面直角转像棱镜分别位于半导体晶粒的正侧部和天面正上方,所述天面直角转向棱镜与平行平板补偿器、半透半反射平行平板合像器位于同一水平高度,侧面直角转像棱镜与半透半反射平行平板合像器位于远心成像镜头的光轴上,同时侧面直角转像棱镜的第一直角面与半透半反射平行平板合像器的第一面相对,侧面直角转像棱镜的第二直角面与半导体晶粒侧面相对,侧面直角转像棱镜的斜面与远心成像镜头光轴倾斜设置;1. The optical path imaging detection device such as the adjacent surface of the crystal grain of the Michelson-like interferometer structure is characterized in that, it includes a CMOS or CCD camera, a telecentric imaging lens, a semi-transparent and semi-reflective parallel plate combined in sequence in the direction of the optical path. The imager, the glass object-carrying turntable, and the semiconductor crystal grains placed on the glass object-carrying turntable are respectively provided with a right angle relay prism, The parallel plate compensator and the side right-angle turning prism, the side right-angle turning prism and the sky right-angle turning prism are respectively located on the positive side of the semiconductor die and directly above the sky, the sky right-angle turning prism and the parallel plate compensator, The transflective parallel plate image combiner is located at the same level, the side right angle relay prism and the transflective parallel plate image combiner are located on the optical axis of the telecentric imaging lens, and the first right angle surface of the side right angle relay prism Opposite to the first surface of the transflective parallel plate image combiner, the second right angle surface of the side right angle relay prism is opposite to the side surface of the semiconductor crystal grain, and the inclined surface of the side right angle relay prism is inclined to the optical axis of the telecentric imaging lens; 天面直角转像棱镜的两个直角面分别与半导体晶粒的天面和半透半反射平行平板合像器的第二面相对;半透半反射平行平板合像器背离第二面旁侧设有同轴外置照明光源;The two right-angle surfaces of the right-angle relay prism are respectively opposite to the sky surface of the semiconductor die and the second surface of the transflective parallel plate image combiner; the transflective parallel plate image combiner is away from the side of the second surface Equipped with coaxial external lighting source; 所述光源经半透半反射平行平板合像器分离为水平第一光路及纵向的第二光路,第一光路经第一直角转像棱镜后照明位于玻璃载物转盘半导体晶粒的天面;第二光路经第二直角转像棱镜后照明待测半导体晶粒的侧面;The light source is separated into a horizontal first optical path and a vertical second optical path by a transflective parallel plate image combiner, and the first optical path illuminates the sky surface of the semiconductor crystal grain on the glass object turntable after passing through the first right angle relay; The second light path illuminates the side surface of the semiconductor die to be tested after passing through the second right-angle relay prism; 半导体晶粒天面的成像光束经第一直角转像棱镜入射到平行平板补偿器上,再经过平行平板补偿器平行出射的产生了一个s的位移,然后经半透半反射平行平板合像器反射抵达参考输出面上;The imaging beam on the top surface of the semiconductor die is incident on the parallel plate compensator through the first right-angle relay prism, and then exits in parallel through the parallel plate compensator to generate a displacement of s, and then passes through the transflective parallel plate image combiner. The reflection reaches the reference output surface; 半导体晶粒侧面的成像光束经第二直角转像棱镜反射转向,再经半透半反射平行平板合像器透射抵达参考输出面上;相机获得双面各自独立的像。The imaging beam on the side of the semiconductor die is reflected and turned by the second right-angle turning prism, and then transmitted through the transflective parallel plate image combiner to reach the reference output surface; the camera obtains independent images on both sides. 2.根据权利要求1所述的类迈克尔逊干涉仪结构的晶粒相邻面等光程成像检测装置,其特征在于,所述天面直角转向棱镜与侧面直角转向棱镜的棱镜直角边长d相同,半导体晶粒位于玻璃载物转盘中心,半透半反射平行平板合像器中心、天面直角转向棱镜与侧面直角转向棱镜的反射面中心及半导体晶粒中心相连形成一个边长为D/2+d的方形对称光路结构,D为玻璃载物转盘宽度。2 . The optical path imaging detection device for the adjacent faces of a crystal grain of a Michelson-like interferometer structure according to claim 1 , wherein the prism right-angle side length d of the sky right-angle turning prism and the side right-angle turning prism is d. 3 . In the same way, the semiconductor die is located in the center of the glass carrier turntable, the center of the transflective parallel plate image combiner, the center of the reflective surface of the right-angle steering prism on the sky and the right-angle steering prism on the side and the center of the semiconductor die are connected to form a side with a length of D/ 2+d square symmetrical optical path structure, D is the width of the glass carousel. 3.根据权利要求2所述的类迈克尔逊干涉仪结构的晶粒相邻面等光程成像检测装置,其特征在于,半透半反射平行平板合像器中心与侧面直角转向棱镜斜面中心距离D/2+d,半导体晶粒侧面的成像光路工作距WD=D/2+d/2, 半透半反射平行平板合像器与天面直角转向棱镜斜面在同一水平高度上,二者距离D/2+d,半导体晶粒天面成像光路工作距离WD=D/2+d/2。3. The optical path imaging detection device such as the adjacent surface of the crystal grain of the Michelson-like interferometer structure according to claim 2, is characterized in that, the center distance between the center of the transflective parallel plate image combiner and the center of the side right-angle steering prism slope D/2+d, the working distance of the imaging optical path on the side of the semiconductor die WD=D/2+d/2, the transflective parallel plate image combiner and the sky right-angle steering prism slope are at the same level, and the distance between the two is at the same level. D/2+d, working distance WD=D/2+d/2 of semiconductor crystal grain aerial imaging optical path. 4.根据权利要求3所述的类迈克尔逊干涉仪结构的晶粒相邻面等光程成像检测装置,其特征在于,天面直角转像棱镜的尺寸为15*15*15mm,侧面直角转像棱镜的尺寸15*15*15mm。4. The Michelson-like interferometer-like structure of the optical path imaging detection device for the adjacent faces of the crystal grains according to claim 3, wherein the size of the right-angle turning prism on the sky is 15*15*15mm, and the right-angle turning prism on the side is 15*15*15mm The size of the prism is 15*15*15mm. 5.根据权利要求4所述的类迈克尔逊干涉仪结构的晶粒相邻面等光程成像检测装置,其特征在于,平行平板补偿器产生的双像分离s= 1.5mm,焦距f=51.5mm,WD=110 mm。5. The optical path imaging detection device for the adjacent surfaces of crystal grains of a Michelson-like interferometer structure according to claim 4, characterized in that, the double image separation s=1.5mm produced by the parallel plate compensator, and the focal length f=51.5 mm, WD=110 mm. 6.根据权利要求4所述的类迈克尔逊干涉仪结构的晶粒相邻面等光程成像检测装置,其特征在于,平行平板补偿器厚度为6.5mm,其法线与光轴夹角为12°,平行平板补偿器的材料为K9玻璃。6. The Michelson-like interferometer-like structure of the optical path imaging detection device for the adjacent surfaces of the crystal grains according to claim 4, wherein the thickness of the parallel plate compensator is 6.5mm, and the angle between its normal and the optical axis is 12°, the material of the parallel plate compensator is K9 glass. 7.根据权利要求3所述的类迈克尔逊干涉仪结构的晶粒相邻面等光程成像检测装置,其特征在于,所述同轴外置照明光源是单色光,或是具有一定光谱带宽的准单色光源或白光。7. The Michelson-like interferometer-like optical path imaging detection device for adjacent surfaces of crystal grains according to claim 3, wherein the coaxial external illumination light source is monochromatic light, or has a certain spectrum Broadband quasi-monochromatic light source or white light.
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CN112067551A (en) * 2020-07-30 2020-12-11 泉州师范学院 Crystal grain adjacent surface complete aplanatic confocal imaging detection device and method based on Michelson-like interferometer structure

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112067551A (en) * 2020-07-30 2020-12-11 泉州师范学院 Crystal grain adjacent surface complete aplanatic confocal imaging detection device and method based on Michelson-like interferometer structure

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