CN111487198A - Parallel plate image-splitting-based confocal imaging detection device and method with complete aplanatism of adjacent surfaces at the same time - Google Patents

Parallel plate image-splitting-based confocal imaging detection device and method with complete aplanatism of adjacent surfaces at the same time Download PDF

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CN111487198A
CN111487198A CN202010538859.3A CN202010538859A CN111487198A CN 111487198 A CN111487198 A CN 111487198A CN 202010538859 A CN202010538859 A CN 202010538859A CN 111487198 A CN111487198 A CN 111487198A
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crystal grain
semiconductor crystal
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廖廷俤
颜少彬
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Quanzhou Normal University
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
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Abstract

The invention provides a novel method for realizing adjacent double-sided space separation imaging detection by respectively adopting a parallel flat plate in adjacent double-sided imaging light paths based on the basic structure principle of an adjacent surface complete aplanatic confocal imaging device. The new method can obtain the simultaneous complete aplanatic confocal imaging detection of two adjacent surfaces of the semiconductor crystal grain, like a polarization image splitting method, a two-color separation imaging method or a time difference resolution imaging method, but does not need to use a polarization optical element and a polarization CMOS sensor (camera) or a color camera and extra image processing thereof, thereby effectively improving the cost performance and the detection efficiency of the detection device.

Description

Parallel plate image-splitting-based confocal imaging detection device and method with complete aplanatism of adjacent surfaces at the same time
The technical field is as follows:
the invention belongs to the field of optical detection and machine vision, and particularly relates to a parallel flat plate split image-based simultaneous complete aplanatic confocal imaging detection device and method for adjacent surfaces.
Background art:
in recent years, the combination of optical imaging technology and artificial intelligence has become a very active research field for optical engineering technology application, the intelligent manufacturing of semiconductor refrigeration device crystal grains cannot leave the machine vision automatic optical detection technology, in order to improve production efficiency, the traditional machine vision automatic optical detection device for detecting one surface of an object to be detected based on one imaging device cannot meet the continuously developed detection application requirements, the research of the semiconductor crystal grain double-surface simultaneous defect imaging detection technology becomes necessary, and the complete aplanatic confocal imaging of a double-surface imaging detection optical path is one of the main core technical problems to be solved.
The main optical technical problems to be solved by the device and method for simultaneously detecting defects of opposite surfaces or adjacent surfaces of a semiconductor crystal grain include aplanatic confocal imaging of a double-sided detection light path, the problems of confocal and resolution caused by an optical path difference between double-sided imaging light paths are solved by adopting a large-depth-of-field telecentric imaging lens in the existing granted patents and patent applications, and the device and method for simultaneously aplanatic confocal imaging and isoluminance illumination detection of opposite surfaces of the crystal grain are solved by the patent applications (application numbers 2019113692573 and 2020101330447, unpublished), as shown in fig. 1 and 2.
While the optical detection device and method proposed by application No. 202010171706X (unpublished) in fig. 3 well solve the problem of quasi-aplanatic confocal imaging detection of adjacent surfaces of semiconductor crystal grains, an optical path difference △ still exists between adjacent double-sided imaging optical paths, and this small optical path difference △ can be compensated by selecting a telecentric imaging lens with a sufficiently large depth of field, when the size of the semiconductor crystal grain to be detected increases, the optical path difference △ and the object-side field of view VOF = △ + a also increase, and a telecentric imaging lens with a large field of view and a large depth of field must be used, which will correspondingly increase the cost of the telecentric imaging lens.
Fig. 4 provides a novel method for realizing complete aplanatic confocal imaging detection of adjacent surfaces of semiconductor crystal grains by using a single-group imaging system based on a time difference resolution imaging method.
The patent application of fig. 5 uses a polarization beam splitter to obtain two illumination beams with mutually perpendicular polarization directions to respectively illuminate two adjacent faces of a semiconductor die to be tested, and proposes a polarized light splitting imaging (abbreviated as "polarization splitting imaging") based method, a device and a method for realizing simultaneous and complete aplanatic confocal imaging detection of the adjacent faces of the semiconductor die by using a polarization camera,
the patent application of fig. 6 proposes a new method for realizing simultaneous and complete aplanatic confocal imaging detection of adjacent surfaces of semiconductor crystal grains by combining a polarization splitting prism assembly and using a common CMOS or CCD camera, still based on the principle of polarized light splitting imaging (polarization splitting for short).
The invention content is as follows:
the invention provides a novel method based on a complete aplanatic confocal imaging device of adjacent surfaces, which can obtain simultaneous complete aplanatic confocal imaging detection of two adjacent surfaces of a semiconductor crystal grain like a polarization image splitting method, a two-color separation imaging method or a time difference discrimination imaging method, but does not need to use a polarization optical element and a polarization CMOS sensor (camera) or a color camera and additional image processing thereof, thereby effectively improving the cost performance and the detection efficiency of the detection device.
The invention relates to a parallel plate image-division-based confocal imaging detection device with complete aplanatism simultaneously on adjacent surfaces, which is characterized in that: the device comprises a CMOS or CCD camera, a telecentric imaging lens, a cubic beam splitting and image combining device, a semiconductor crystal grain and a transparent glass objective table for bearing the semiconductor crystal grain, wherein the CMOS or CCD camera, the telecentric imaging lens, the cubic beam splitting and image combining device, the semiconductor crystal grain and the transparent glass objective table are sequentially arranged in the light path direction; the side right-angle rotating image prism and the second glass parallel flat plate as well as the cubic beam splitting and image combining device are positioned on the optical axis of the telecentric imaging lens, meanwhile, a first right-angle surface of the side right-angle rotating image prism is opposite to a first surface of the cubic beam splitting and image combining device, a second right-angle surface of the side right-angle rotating image prism is opposite to the side surface of the semiconductor crystal grain, and the inclined surface of the side right-angle rotating image prism is obliquely arranged with the optical axis of the telecentric imaging lens; two right-angle surfaces of the skyhook right-angle rotating image prism are respectively opposite to the skyhook of the semiconductor crystal grain and the second surface of the cubic beam splitting and image combining device; the surface normal of the first glass parallel flat plate and the optical axis of the optical path form an included angle, the surface normal of the second glass parallel flat plate and the optical axis of the optical path form an included angle, a coaxial external illumination light source is arranged beside a fourth surface opposite to the second surface of the cubic beam splitting and imaging combiner, and the top surface and the side surface of the semiconductor crystal grain are subjected to confocal imaging on the sensor surface of the camera through a right-angle image rotating prism, the glass parallel flat plate and the cubic beam splitting and imaging combiner in a complete equal optical path respectively so as to obtain independent images of the two surfaces of the semiconductor crystal grain on a CMOS or CCD camera.
Furthermore, the distance between the center of the cubic beam splitting image combiner and the center of the inclined plane of the side right-angle relay prism is D/2+ D, the cubic beam splitting image combiner and the inclined plane of the top right-angle relay prism are on the same horizontal height, the distance between the cubic beam splitting image combiner and the inclined plane of the top right-angle relay prism is D/2+ D, the working distance WD of a side imaging optical path is = D/2+ D/2, the working distance WD of the top imaging optical path is = WD = D/2+ D/2, D is the width of a transparent glass objective table, and D is the side length; the semiconductor crystal grain top imaging optical path working distance WD = D/2+ D/2=30mm, and the side imaging optical path working distance WD = D/2+ D/2=30 mm.
Further, the first and second glass parallel plates have a thickness t =5.83mm, an angle α =25 ° between a normal of the glass parallel plate surface and the optical axis, the plate glass material is K9, and the distance between the calculated two-sided image =1.8 mm;
furthermore, the size of the top right-angle transfer prism is 15 × 15mm, the size of the side right-angle transfer prism is 15 × 15mm, and the size of the cubic beam splitter/combiner is 15 × 15 mm; the centers of the reflecting surfaces of the two right-angle relay prisms are connected with the center of the semiconductor crystal grain to form a square symmetrical light path structure with the size of 37.5x 37.5 mm.
Furthermore, the coaxial external illumination light source is monochromatic light, or a quasi-monochromatic light source or white light with a certain spectral bandwidth.
The invention relates to a parallel plate partial image-based confocal imaging detection method with complete aplanatism simultaneously on adjacent surfaces, which is characterized in that: the confocal imaging detection device comprises a CMOS or CCD camera, a telecentric imaging lens, a cubic beam splitting and image combining device, a semiconductor crystal grain and a transparent glass object stage for bearing the semiconductor crystal grain, wherein the CMOS or CCD camera, the telecentric imaging lens, the cubic beam splitting and image combining device, the semiconductor crystal grain and the transparent glass object stage are sequentially arranged in the light path direction; the side right-angle rotating image prism and the second glass parallel flat plate as well as the cubic beam splitting and image combining device are positioned on the optical axis of the telecentric imaging lens, meanwhile, a first right-angle surface of the side right-angle rotating image prism is opposite to a first surface of the cubic beam splitting and image combining device, a second right-angle surface of the side right-angle rotating image prism is opposite to the side surface of the semiconductor crystal grain, and the inclined surface of the side right-angle rotating image prism is obliquely arranged with the optical axis of the telecentric imaging lens; two right-angle surfaces of the skyhook right-angle rotating image prism are respectively opposite to the skyhook of the semiconductor crystal grain and the second surface of the cubic beam splitting and image combining device; the surface normal of the first glass parallel flat plate and the optical axis of the optical path form an included angle, the surface normal of the second glass parallel flat plate and the optical axis of the optical path form an included angle, a coaxial external illumination light source is arranged beside a fourth surface opposite to the second surface of the cubic beam splitting and imaging combiner, and the top surface and the side surface of the semiconductor crystal grain are subjected to confocal imaging on the sensor surface of the camera through a right-angle image rotating prism, the glass parallel flat plate and the cubic beam splitting and imaging combiner in a complete equal optical path respectively so as to obtain independent images of the two surfaces of the semiconductor crystal grain on a CMOS (complementary metal oxide semiconductor) or CCD; when in use, the utility model is used for cleaning the inner wall of the tank,
double-sided illumination light path:
the coaxial external illumination light source is divided into two illumination light beams when passing through the cubic beam splitter and combiner: a beam of light passes through the skyhook right-angle rotating prism and the first glass parallel flat plate and then illuminates the skyhook of the semiconductor crystal grain to be tested on the glass loading turntable; the other beam of illumination light illuminates the side surface of the semiconductor crystal grain to be tested after passing through the side surface right-angle relay prism and the second glass parallel plate, and the two beams of illumination light respectively illuminate two adjacent surfaces of the semiconductor crystal grain;
imaging detection light path:
two adjacent surfaces of the illuminated semiconductor crystal grain generate diffused light, and an imaging light beam on the zenith surface of the semiconductor crystal grain is incident to the prism with the thickness of t and the surface normal line and the optical axis are formedThe imaging light beam emitted from the first glass parallel plate is shifted to one side of the optical axis on the first glass parallel plate with an included angle α1The imaging beam from the side of the semiconductor crystal grain is incident via the side right-angle image-rotating prism onto the second glass parallel plate with thickness t and surface normal line in an included angle α with the optical axis, and the imaging beam from the second glass parallel plate is shifted to the other side of the optical axis2Then the light is transmitted by the cubic beam splitter and combiner to reach the reference output surface; the interval of intermediate images of adjacent surfaces output from the cubic beam splitter-combiner is =1+2And images with independent two surfaces are respectively obtained on a CMOS or CCD camera.
The device and the method have the advantages that:
1) the device can realize the simultaneous complete aplanatic confocal imaging detection of two adjacent surfaces of the semiconductor crystal grain, namely △ =0, and the optical path difference of the imaging of the two adjacent surfaces is not compensated by using a large-depth-of-field telecentric lens;
2) the device has the advantages that the expected space separation of double-sided imaging can be obtained by using the glass parallel flat plate in the imaging light path, the interval of double images can be adjusted, and for the given thickness t of the glass parallel flat plate and the refractive index n of the glass, the size of the interval depends on an included angle α formed by the normal line of the surface of the glass parallel flat plate and the optical axis;
3) the device can also use the angle fine adjustment of the glass parallel flat plate on the meridian and sagittal planes to correct and compensate the deviation of the relative space position of the double-sided imaging caused by the angle manufacturing error and the assembly error of the cubic prism or the right-angle relay prism;
4) the device adopts a common glass parallel flat plate and a CMOS or CCD camera, does not need to use a polarized optical element and a polarized CMOS sensor (camera) or a color camera and extra image processing thereof, can effectively reduce the cost of the detection device, and improves the cost performance and the detection efficiency of the detection device.
5) The device for simultaneously imaging and detecting the adjacent double surfaces of the semiconductor crystal grains has the advantages of simple and compact structure, easy assembly and debugging and good reliability.
Description of the drawings:
FIGS. 1-6 illustrate conventional semiconductor die adjacent surface detection optics;
wherein 1 is a black-and-white camera, 2 is a telecentric imaging lens, 3a or 3b is a rotating image prism, 3 is an image combination optical element, 4 is a semiconductor crystal grain, 5 is a transparent glass object stage, 6 or 6a or 6b is a rotating image prism, 7 or 7a and 7b are light sources, and 8 and 9 are optical filters;
FIG. 7 is a schematic diagram of the apparatus of the present invention;
FIG. 8a is a schematic view of the adjustment of a parallel glass plate in a meridian plane;
FIG. 8b is a schematic view of the adjustment of the parallel glass plates in the sagittal plane;
fig. 9 is a schematic diagram of a corresponding size example of the device of the present invention.
The specific implementation mode is as follows:
the confocal imaging detection device comprises a CMOS or CCD camera 1, a telecentric imaging lens 2, a cubic beam splitting and image combining device 3, a semiconductor crystal grain 6 and a transparent glass object stage 7 for bearing the semiconductor crystal grain, wherein the CMOS or CCD camera 1, the telecentric imaging lens 2, the cubic beam splitting and image combining device 3, the semiconductor crystal grain 6 and the transparent glass object stage 7 are sequentially arranged in the light path direction, a vertical surface right-angle rotating prism 4a, a first glass parallel plate 5a, a lateral surface right-angle rotating prism 4B and a second glass parallel plate 5B are sequentially arranged on the light path between the semiconductor crystal grain 6 and the cubic beam splitting and image combining device 3, the lateral surface right-angle rotating prism 4B and the vertical surface right-angle rotating prism 4a are respectively positioned on the front side part of the semiconductor crystal grain and right above the vertical surface, the cubic beam splitting and image combining device 3, the first glass parallel plate 5a and the vertical surface right-angle rotating prism 4a are at the same horizontal height, the lateral surface right-angle rotating prism 4B, the second glass parallel plate 5B, the cubic beam splitting and image combining device 3 are positioned on the optical axis A of the semiconductor crystal grain, the lateral surface of the lateral surface right-angle rotating prism 3B, the vertical surface of the vertical surface right-angle rotating prism 3B is opposite to the vertical surface of the vertical surface right-angle rotating prism 3, the vertical surface of the vertical surface right-angle rotating prism 3, the vertical surface of the vertical surface right-angle rotating prism 3, the vertical.
The first and second glass parallel plates 5a and 5b in the imaging optical paths of the sky and the side face respectively have the effect of enabling double-sided imaging light beams to generate displacement towards the two sides of the center (optical axis) of the cubic beam splitter-combiner 31And2and is1And2is determined by the thickness t of the parallel plate, the refractive index n of the glass, and the angle α between the normal to the parallel plate surface and the optical axisx。
The images of the adjacent surfaces of the semiconductor crystal grains output from the image combiner 3 are separated in space, and the image interval is =1+2。
The deviation of the relative spatial position of the two-sided image due to the angular error and assembly error of the cube prism or the rectangular relay prism can be obtained by fine-tuning α the angle between the normal of the parallel flat plate surface and the optical axis in the meridian plane (y-z plane, z axis along the optical axis direction)xThe compensation is corrected by + -as shown in FIG. 8a, and similarly, the included angle α between the normal of the parallel flat plate surface and the optical axis can be finely adjusted in the sagittal plane (x-z plane)yTo correct for the compensation, as shown in fig. 8 b.
The distance between the center of the cubic beam splitter and combiner 3 and the center of the inclined plane of the side right-angle relay prism 4b is D/2+ D, the distance between the cubic beam splitter and combiner 3 and the inclined plane of the top right-angle relay prism 4a is D/2+ D, the working distance WD of the side imaging optical path is = D/2+ D/2, the working distance WD of the top imaging optical path is = WD = D/2+ D/2, D is the width of the transparent glass objective table, and D is the side length of the right-angle prism; the semiconductor crystal grain top imaging optical path working distance WD = D/2+ D/2=30mm, and the side imaging optical path working distance WD = D/2+ D/2=30 mm.
As shown in fig. 9, the first and second glass parallel plates have a thickness t =5.83mm, an angle α =25 ° between the normal of the glass parallel plate surface and the optical axis, and the plate glass material is K9, and the distance between the two-sided images is calculated to be =1.8 mm.
The size of the right-angle transfer prism of the top surface is 15 × 15mm, the size of the right-angle transfer prism of the side surface is 15 × 15mm, and the size of the cubic beam splitter/combiner is 15 × 15 mm; the centers of the reflecting surfaces of the two right-angle relay prisms are connected with the center of the semiconductor crystal grain to form a square symmetrical light path structure with the size of 37.5x 37.5 mm.
The coaxial external illumination light source is monochromatic light, or can also be a quasi-monochromatic light source or white light with a certain spectral bandwidth.
The cubic beam splitting and image combining device is a cubic beam splitting prism formed by two identical right-angle prisms, has the functions of a beam splitter in an illumination light path and an image combining device in an imaging light path, and is cubic in shape, so the cubic beam splitting and image combining device is named as a cubic beam splitting and image combining device; the transmission and reflection ratio of the prism is 50% plated on the inclined plane of a right-angle prism: 50% of light splitting film, and the inclined planes of the two right-angle reflecting prisms are glued.
The invention relates to a confocal imaging detection method for simultaneously and completely aplanatism of adjacent surfaces based on parallel flat plate split images, which comprises a CMOS or CCD camera, a telecentric imaging lens, a cubic beam splitting and image combining device, a semiconductor crystal grain and a transparent glass objective table for bearing the semiconductor crystal grain, wherein the CMOS or CCD camera, the telecentric imaging lens, the cubic beam splitting and image combining device, the semiconductor crystal grain and the transparent glass objective table are sequentially arranged in the light path direction; the side right-angle rotating image prism and the second glass parallel flat plate as well as the cubic beam splitting and image combining device are positioned on the optical axis of the telecentric imaging lens, meanwhile, a first right-angle surface of the side right-angle rotating image prism is opposite to a first surface of the cubic beam splitting and image combining device, a second right-angle surface of the side right-angle rotating image prism is opposite to the side surface of the semiconductor crystal grain, and the inclined surface of the side right-angle rotating image prism is obliquely arranged with the optical axis of the telecentric imaging lens; two right-angle surfaces of the skyhook right-angle rotating image prism are respectively opposite to the skyhook of the semiconductor crystal grain and the second surface of the cubic beam splitting and image combining device; the surface normal of the first glass parallel flat plate and the optical axis of the optical path form an included angle, the surface normal of the second glass parallel flat plate and the optical axis of the optical path form an included angle, a coaxial external illumination light source is arranged beside a fourth surface opposite to the second surface of the cubic beam splitting and imaging combiner, and the top surface and the side surface of the semiconductor crystal grain are subjected to confocal imaging on the sensor surface of the camera in a complete aplanatism way through a right-angle image rotating prism and the cubic beam splitting and imaging combiner respectively so as to obtain independent images of the two surfaces of the semiconductor crystal grain on a CMOS (complementary metal oxide semiconductor) or CCD (; when in use, the utility model is used for cleaning the inner wall of the tank,
double-sided illumination light path:
the coaxial external illumination light source is divided into two illumination light beams when passing through the cubic beam splitter and combiner: a beam of light passes through the skyhook right-angle rotating prism and the first glass parallel flat plate and then illuminates the skyhook of the semiconductor crystal grain to be tested on the glass loading turntable; the other beam of illumination light illuminates the side surface of the semiconductor crystal grain to be tested after passing through the side surface right-angle relay prism and the second glass parallel plate, and the two beams of illumination light respectively illuminate two adjacent surfaces of the semiconductor crystal grain;
imaging detection light path:
two adjacent surfaces of the illuminated semiconductor crystal grain generate diffused light, an imaging light beam of the skyhook of the semiconductor crystal grain is incident on a first glass parallel plate with the thickness of t and the surface normal line forming an included angle of α with the optical axis through a skyhook right-angle rotating image prism, and the imaging light beam emitted from the first glass parallel plate generates a displacement to one side of the optical axis1The imaging beam from the side of the semiconductor crystal grain is incident via the side right-angle image-rotating prism onto the second glass parallel plate with thickness t and surface normal line in an included angle α with the optical axis, and the imaging beam from the second glass parallel plate is shifted to the other side of the optical axis2Then the light is transmitted by the cubic beam splitter and combiner to reach the reference output surface; slave cube beam splitting and image combining deviceIntermediate image interval between adjacent output surfaces is =1+2And images with independent two surfaces are respectively obtained on a CMOS or CCD camera.
The device and the method have the advantages that:
1) the device can realize the simultaneous complete aplanatic confocal imaging detection of two adjacent surfaces of the semiconductor crystal grain, namely △ =0, and the optical path difference of the imaging of the two adjacent surfaces is not compensated by using a large-depth-of-field telecentric lens;
2) the device has the advantages that the expected space separation of double-sided imaging can be obtained by using the glass parallel flat plate in the imaging light path, the interval of double images can be adjusted, and for the given thickness t of the glass parallel flat plate and the refractive index n of the glass, the size of the interval depends on an included angle α formed by the normal line of the surface of the glass parallel flat plate and the optical axis;
3) the device can also use the angle fine adjustment of the glass parallel flat plate on the meridian and sagittal planes to correct and compensate the deviation of the relative space position of the double-sided imaging caused by the angle manufacturing error and the assembly error of the cubic prism or the right-angle relay prism;
4) the device adopts a common glass parallel flat plate and a CMOS or CCD camera, does not need to use a polarized optical element and a polarized CMOS sensor (camera) or a color camera and extra image processing thereof, can effectively reduce the cost of the detection device, and improves the cost performance and the detection efficiency of the detection device.
5) The device for simultaneously imaging and detecting the adjacent double surfaces of the semiconductor crystal grains has the advantages of simple and compact structure, easy assembly and debugging and good reliability.
Finally, it should be noted that the above examples are only used to illustrate the technical solutions of the present invention and not to limit the same; although the present invention has been described in detail with reference to preferred embodiments, those skilled in the art will understand that: modifications to the specific embodiments of the invention or equivalent substitutions for parts of the technical features may be made; without departing from the spirit of the present invention, it is intended to cover all aspects of the invention as defined by the appended claims.

Claims (6)

1. The utility model provides an adjacent surface is complete aplanatic confocal formation of image detection device simultaneously based on parallel plate divides like which characterized in that: the device comprises a CMOS or CCD camera, a telecentric imaging lens, a cubic beam splitting and image combining device, a semiconductor crystal grain and a transparent glass objective table for bearing the semiconductor crystal grain, wherein the CMOS or CCD camera, the telecentric imaging lens, the cubic beam splitting and image combining device, the semiconductor crystal grain and the transparent glass objective table are sequentially arranged in the light path direction; the side right-angle rotating image prism and the second glass parallel flat plate as well as the cubic beam splitting and image combining device are positioned on the optical axis of the telecentric imaging lens, meanwhile, a first right-angle surface of the side right-angle rotating image prism is opposite to a first surface of the cubic beam splitting and image combining device, a second right-angle surface of the side right-angle rotating image prism is opposite to the side surface of the semiconductor crystal grain, and the inclined surface of the side right-angle rotating image prism is obliquely arranged with the optical axis of the telecentric imaging lens; two right-angle surfaces of the skyhook right-angle rotating image prism are respectively opposite to the skyhook of the semiconductor crystal grain and the second surface of the cubic beam splitting and image combining device; the surface normal of the first glass parallel flat plate and the optical axis of the optical path form an included angle, the surface normal of the second glass parallel flat plate and the optical axis of the optical path form an included angle, a coaxial external illumination light source is arranged beside a fourth surface opposite to the second surface of the cubic beam splitting and imaging combiner, and the top surface and the side surface of the semiconductor crystal grain are subjected to confocal imaging on the sensor surface of the camera through a right-angle image rotating prism, the glass parallel flat plate and the cubic beam splitting and imaging combiner in a complete equal optical path respectively so as to obtain independent images of the two surfaces of the semiconductor crystal grain on a CMOS or CCD camera.
2. The confocal imaging detection device with complete aplanatic simultaneous adjacent surfaces based on parallel flat-plate partial images according to claim 1, wherein: the distance between the center of the cubic beam splitting image combiner and the center of the inclined plane of the side right-angle relay prism is D/2+ D, the cubic beam splitting image combiner and the inclined plane of the top right-angle relay prism are on the same horizontal height, the distance between the cubic beam splitting image combiner and the inclined plane of the top right-angle relay prism is D/2+ D, the working distance WD of a side imaging light path is = D/2+ D/2, the working distance WD of the top imaging light path is = WD = D/2+ D/2, D is the width of a transparent glass object stage, and D is the; the semiconductor crystal grain top imaging optical path working distance WD = D/2+ D/2=30mm, and the side imaging optical path working distance WD = D/2+ D/2=30 mm.
3. The confocal imaging detection apparatus with complete aplanatism simultaneously based on adjacent surfaces of parallel plate partial images as claimed in claim 1 or 2, wherein the thickness t =5.83mm of the first and second glass parallel plates, the included angle between the surface normal of the glass parallel plates and the optical axis is α =25 °, the plate glass material is K9, and the calculated interval of the two-sided image is =1.8 mm.
4. The confocal imaging detection device with complete aplanatic simultaneous adjacent surfaces based on parallel flat-plate partial images according to claim 1, wherein: the size of the top right-angle transfer prism is 15 × 15mm, the size of the side right-angle transfer prism is 15 × 15mm, and the size of the cubic beam splitter/combiner is 15 × 15 mm; the centers of the reflecting surfaces of the two right-angle relay prisms are connected with the center of the semiconductor crystal grain to form a square symmetrical light path structure with the size of 37.5x 37.5 mm.
5. The confocal imaging detection device with complete aplanatic simultaneous adjacent surfaces based on parallel flat-plate partial images according to claim 1, wherein: the coaxial external illumination light source is monochromatic light, or a quasi-monochromatic light source or white light with a certain spectral bandwidth.
6. A confocal imaging detection method for simultaneously and completely aplanatism of adjacent surfaces based on parallel flat plate partial images is characterized in that: the confocal imaging detection device comprises a CMOS or CCD camera, a telecentric imaging lens, a cubic beam splitting and image combining device, a semiconductor crystal grain and a transparent glass object stage for bearing the semiconductor crystal grain, wherein the CMOS or CCD camera, the telecentric imaging lens, the cubic beam splitting and image combining device, the semiconductor crystal grain and the transparent glass object stage are sequentially arranged in the light path direction; the side right-angle rotating image prism and the second glass parallel flat plate as well as the cubic beam splitting and image combining device are positioned on the optical axis of the telecentric imaging lens, meanwhile, a first right-angle surface of the side right-angle rotating image prism is opposite to a first surface of the cubic beam splitting and image combining device, a second right-angle surface of the side right-angle rotating image prism is opposite to the side surface of the semiconductor crystal grain, and the inclined surface of the side right-angle rotating image prism is obliquely arranged with the optical axis of the telecentric imaging lens; two right-angle surfaces of the skyhook right-angle rotating image prism are respectively opposite to the skyhook of the semiconductor crystal grain and the second surface of the cubic beam splitting and image combining device; the surface normal of the first glass parallel flat plate and the optical axis of the optical path form an included angle, the surface normal of the second glass parallel flat plate and the optical axis of the optical path form an included angle, a coaxial external illumination light source is arranged beside a fourth surface opposite to the second surface of the cubic beam splitting and imaging combiner, and the top surface and the side surface of the semiconductor crystal grain are subjected to confocal imaging on the sensor surface of the camera through a right-angle image rotating prism, the glass parallel flat plate and the cubic beam splitting and imaging combiner in a complete equal optical path respectively so as to obtain independent images of the two surfaces of the semiconductor crystal grain on a CMOS (complementary metal oxide semiconductor) or CCD; when in use, the utility model is used for cleaning the inner wall of the tank,
double-sided illumination light path:
the coaxial external illumination light source is divided into two illumination light beams when passing through the cubic beam splitter and combiner: a beam of light passes through the skyhook right-angle rotating prism and the first glass parallel flat plate and then illuminates the skyhook of the semiconductor crystal grain to be tested on the glass loading turntable; the other beam of illumination light illuminates the side surface of the semiconductor crystal grain to be tested after passing through the side surface right-angle relay prism and the second glass parallel plate, and the two beams of illumination light respectively illuminate two adjacent surfaces of the semiconductor crystal grain;
imaging detection light path:
two adjacent surfaces of the illuminated semiconductor crystal grain generate diffused light, an imaging light beam of the skyhook of the semiconductor crystal grain is incident on a first glass parallel plate with the thickness of t and the surface normal line forming an included angle of α with the optical axis through a skyhook right-angle rotating image prism, and the imaging light beam emitted from the first glass parallel plate generates a displacement to one side of the optical axis1The imaging beam from the side of the semiconductor crystal grain is incident via the side right-angle image-rotating prism onto the second glass parallel plate with thickness t and surface normal line in an included angle α with the optical axis, and the imaging beam from the second glass parallel plate is shifted to the other side of the optical axis2Then the light is transmitted by the cubic beam splitter and combiner to reach the reference output surface; the interval of intermediate images of adjacent surfaces output from the cubic beam splitter-combiner is =1+2And images with independent two surfaces are respectively obtained on a CMOS or CCD camera.
CN202010538859.3A 2020-06-13 2020-06-13 Parallel plate image-splitting-based confocal imaging detection device and method with complete aplanatism of adjacent surfaces at the same time Pending CN111487198A (en)

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