CN111366541A - Device and method for realizing simultaneous aplanatic confocal detection of double surfaces of crystal grains by using polarization image splitting method - Google Patents

Device and method for realizing simultaneous aplanatic confocal detection of double surfaces of crystal grains by using polarization image splitting method Download PDF

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CN111366541A
CN111366541A CN202010296134.8A CN202010296134A CN111366541A CN 111366541 A CN111366541 A CN 111366541A CN 202010296134 A CN202010296134 A CN 202010296134A CN 111366541 A CN111366541 A CN 111366541A
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廖廷俤
颜少彬
段亚凡
黄衍堂
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Quanzhou Normal University
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    • G—PHYSICS
    • G01—MEASURING; TESTING
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    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
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    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/22—Telecentric objectives or lens systems
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Abstract

The invention discloses a device and a method for realizing the simultaneous aplanatism confocal detection of crystal grains by using a polarization image splitting method, wherein the device comprises a CMOS or CCD camera, a telecentric imaging lens, a polarization image splitting prism component, a polarization cube beam splitter, a right-angle rotating image prism, a semiconductor crystal grain and a transparent glass objective table for bearing the semiconductor crystal grain which are sequentially arranged in the direction of an optical path.

Description

Device and method for realizing simultaneous aplanatic confocal detection of double surfaces of crystal grains by using polarization image splitting method
The technical field is as follows:
the invention belongs to the field of optical detection and machine vision, and particularly relates to a device and a method for realizing simultaneous aplanatic confocal detection of two surfaces of a crystal grain by using a polarization image splitting method.
Background art:
the main optical technical problem to be solved by the device and the method for simultaneously detecting the defects of the opposite surfaces or the adjacent surfaces of the semiconductor crystal grains is aplanatic confocal imaging of a double-sided detection light path.
Patent applications (application numbers 2019113692573, 2020101330447, unpublished, as shown in fig. 1 and 2) address methods for simultaneous aplanatic confocal imaging and isoluminance illumination detection of opposite sides of semiconductor dies.
Fig. 3 is an optical inspection apparatus and method proposed by application No. 202010171706X (unpublished), which well solves the problem of quasi-aplanatic confocal imaging inspection of adjacent surfaces of semiconductor crystal grains, but there still exists an optical path difference △ between adjacent two-sided imaging optical paths, and this small optical path difference △ can be compensated by selecting a telecentric imaging lens with a sufficiently large depth of field, when the size of the semiconductor crystal grain to be inspected increases, the optical path difference △ and the object-side field of view VOF △ + a also increase accordingly, and a telecentric imaging lens with a large field of view and a large depth of field must be used, which will correspondingly increase the cost of the telecentric imaging lens, so that it becomes necessary to find a new way for completely aplanatic confocal imaging inspection of adjacent surfaces of crystal grains.
Fig. 4 is a diagram illustrating two beams of illumination beams with mutually perpendicular polarization directions are obtained by using a polarization beam splitter to illuminate two adjacent faces of a semiconductor die to be tested, in order to effectively utilize energy of an illumination light source to improve illumination efficiency.
The invention content is as follows:
aiming at the problems of the detection of the adjacent surfaces, the invention provides a device and a method for realizing the simultaneous aplanatic confocal detection of the two surfaces of the crystal grain by using a polarization image splitting method, the device does not need to adopt an expensive polarization camera, the cost of a common CMOS or CCD camera is about 10 percent of that of the polarization camera at present, and the cost of a detection system can be effectively reduced even if the cost of a polarization image splitting prism assembly is increased.
The invention discloses a device for realizing simultaneous aplanatic confocal detection of crystal grain double surfaces by using a polarization image splitting method, which is characterized in that: the system comprises a CMOS or CCD camera, a telecentric imaging lens, a polarization image-splitting prism component, a polarization cubic beam splitter, a semiconductor crystal grain and a transparent glass objective table for bearing the semiconductor crystal grain, which are sequentially arranged in the direction of a light path, wherein a side right-angle image-rotating prism and a sky right-angle image-rotating prism are respectively arranged on the light path between the semiconductor crystal grain and the polarization cubic beam splitter, the side right-angle image-rotating prism and the sky right-angle image-rotating prism are respectively positioned at the right side part of the semiconductor crystal grain and right above the sky, and the polarization cubic beam splitter and the sky right-angle image-rotating prism are at the same horizontal height; the side right-angle relay prism and the polarization cube beam splitter are positioned on the optical axis of the telecentric imaging lens, a first right-angle surface of the side right-angle relay prism is aligned and glued with a first surface of the polarization cube beam splitter, a second right-angle surface of the side right-angle relay prism is opposite to the side surface of the semiconductor crystal grain, the inclined surface of the side right-angle relay prism is obliquely arranged with the optical axis of the telecentric imaging lens, and two right-angle surfaces of the zenith right-angle relay prism are respectively opposite to the zenith surface of the semiconductor crystal grain and the second surface of the polarization cube beam splitter; the polarization image splitting prism assembly comprises a Wollaston polarization prism attached to the third surface of the polarization cube beam splitter and a roof prism located on the Wollaston polarization prism and close to one side of the telecentric imaging lens, a coaxial external illumination light source is arranged beside the fourth surface opposite to the second surface of the polarization cube beam splitter, the top surface and the side surface of the semiconductor crystal grain are respectively imaged on the sensor surface of the CMOS or CCD camera in an aplanatic confocal polarization mode through the right-angle image turning prism, the polarization cube beam splitter and the polarization image splitting prism assembly, and independent images of the two surfaces of the semiconductor crystal grain are obtained on the CMOS or CCD camera.
The invention discloses a device for realizing simultaneous aplanatic confocal detection of crystal grain double surfaces by using a polarization image splitting method, which is characterized in that: the system comprises a CMOS or CCD camera, a telecentric imaging lens, a polarization image-splitting prism component, a polarization cubic beam splitter, a semiconductor crystal grain and a transparent glass objective table for bearing the semiconductor crystal grain, which are sequentially arranged in the direction of a light path, wherein a side right-angle image-rotating prism and a sky right-angle image-rotating prism are respectively arranged on the light path between the semiconductor crystal grain and the polarization cubic beam splitter, the side right-angle image-rotating prism and the sky right-angle image-rotating prism are respectively positioned at the right side part of the semiconductor crystal grain and right above the sky, and the polarization cubic beam splitter and the sky right-angle image-rotating prism are at the same horizontal height; the side right-angle relay prism and the polarization cube beam splitter are positioned on the optical axis of the telecentric imaging lens, a first right-angle surface of the side right-angle relay prism is aligned and glued with a first surface of the polarization cube beam splitter, a second right-angle surface of the side right-angle relay prism is opposite to the side surface of the semiconductor crystal grain, the inclined surface of the side right-angle relay prism is obliquely arranged with the optical axis of the telecentric imaging lens, and two right-angle surfaces of the zenith right-angle relay prism are respectively opposite to the zenith surface of the semiconductor crystal grain and the second surface of the polarization cube beam splitter; the polarization image splitting prism assembly comprises a Wollaston polarization prism attached to the third surface of the polarization cube beam splitter and a roof prism positioned on the Wollaston polarization prism and close to one side of the telecentric imaging lens, coaxial external illumination light sources are respectively arranged between the side surface right-angle rotating prism and the side surface of the semiconductor crystal grain, and between the top surface right-angle rotating prism and the top surface of the semiconductor crystal grain, the top surface and the side surface of the semiconductor crystal grain are respectively imaged on the sensor surface of the CMOS or CCD camera in an aplanatic confocal polarization mode through the right-angle rotating prism, the polarization cube beam splitter and the polarization image splitting prism assembly, and independent images of the two surfaces of the semiconductor crystal grain are obtained on the CMOS or CCD camera.
Further, the polarization imaging illumination light path: when passing through the polarization cube beam splitter, the illumination light source is divided into two linearly polarized light beams with mutually vertical polarization directions, namely a p-component and an s-component; a beam of p-component polarized light illuminates the skyhook of the semiconductor crystal grain to be measured through a skyhook right-angle rotating image prism; and the other beam of s-component polarized light illuminates the side surface of the semiconductor crystal grain to be tested through the side surface right-angle relay prism, and the two adjacent surfaces of the semiconductor crystal grain are respectively illuminated by the two beams of linearly polarized light with mutually vertical vibration directions.
Furthermore, two adjacent surfaces of the semiconductor crystal grain are illuminated by two linearly polarized light beams with mutually vertical vibration directions to generate diffuse reflection light; the imaging light beam s-component of the semiconductor crystal grain skyward is reflected by a skyward right-angle rotating image prism and a polarization cubic beam splitter to enter a polarization image splitting prism component; the p-component imaging light beam on the side surface of the semiconductor crystal grain is transmitted into the polarization splitting prism assembly through the side right-angle rotating prism and the polarization cubic beam splitter, and double-sided images output from the polarization splitting prism assembly respectively obtain independent images on two sides on a common CMOS or CCD camera.
Further, the working distance WD of the skyhook imaging optical path is d/2, and d is the side length of the right angle of the prism; the polarization cubic beam splitter is glued with the side right-angle relay prism and the centers of the polarization cubic beam splitter are overlapped, the working distance WD of a side imaging light path is D/2+ D/2, and D is the width of the transparent glass objective table; the coaxial external illumination light source is monochromatic light or a quasi-monochromatic light source with a certain spectral bandwidth.
Furthermore, the size of the zenith rectangular relay prism is 15 × 15mm, the size of the lateral rectangular relay prism is 15 × 15mm, the size of the polarization cubic beam splitter is 15 × 15mm, the length of the wollaston polarization prism is 10 × the width of the wollaston polarization prism is 10 × the height of the ridge prism is 11mm, and the length of the roof ridge prism is 10 × the width of the ridge prism is 10 × the height of the ridge prism is 3.17 mm.
Further, the images formed by the polarized light output from the adjacent surfaces of the semiconductor crystal grains from the polarization splitting prism assembly are separated in space; respectively obtaining aplanatic confocal imaging detection of the semiconductor crystal grain with separable polarization of the top surface and side surface light paths by using a common CMOS or CCD camera; or a common CMOS or CCD camera is used for respectively obtaining complete aplanatic confocal polarization imaging detection with separable 0-degree and 90-degree polarization directions of the top surface and the side surface imaging light path.
Further, the foregoing assumes that the Wollaston polarizing prism made of calcite has a dimension L1×W1×H110 × 10 × 11, the prism apex angle θ is 45 °, and the refractive indices of the o light and the e light are no1.658 and ne1.486; the ridge prism made of K9 material has a dimension of L2×W2×H210 × 10 × 3.17.17, the included angles of the left and right ridge and the horizontal direction are respectively epsilon1And ε2Refractive index of nk91.5163; the height of the air gap between the Wollaston polarizing prism and the ridge prism is H3Refractive index of air nair1.0; assuming a side imaging beam (p-splitting)Quantity) e light is vertically incident to a first prism of a Wollaston polarizing prism, is changed into o light at a second prism of the Wollaston polarizing prism, is deflected to the left side and is finally imaged on the left side of the camera; a skyhook imaging light beam (s-component) is vertically incident to a first prism of a Wollaston polarizing prism as o light, is changed into e light at a second prism of the Wollaston polarizing prism, deviates to the right side and is finally imaged on the right side of the camera;
assume that the refraction angle of the side light path from the first Wollaston polarizer to the second Wollaston polarizer is α1The angle of refraction from the exit of the Wollaston polarizer to the air gap is β1The angle of refraction incident on the roof-ridge prism from the air gap is gamma1Then there are:
Figure BDA0002452256640000051
Figure BDA0002452256640000052
Figure BDA0002452256640000053
Figure BDA0002452256640000054
for the zenith path, assume that the angle of refraction incident from the first to the second Wollaston polarizer is α2The angle of refraction from the exit of the Wollaston polarizer to the air gap is β2The angle of refraction from the air gap into the ridge prism is gamma2Then there are:
Figure BDA0002452256640000055
Figure BDA0002452256640000056
Figure BDA0002452256640000057
Figure BDA0002452256640000058
assuming that the optical paths of the side light paths in the Wollaston polarizing prism, the air gap, the roof ridge prism and the optical paths from the vertical outgoing light to the same horizontal height as the vertex of the roof ridge prism are L respectively11，L12，L13And L14(ii) a The offset amounts produced are respectively delta11，δ12And delta13(ii) a Total optical length of L1Total offset of delta1Then, there are:
δ1＝δ11+δ12+δ13
L1＝L11+L12+L13+L14
Figure BDA0002452256640000059
δ12＝H3*tan(β1)
by
Figure BDA0002452256640000061
The following can be obtained:
Figure BDA0002452256640000062
Figure BDA0002452256640000063
Figure BDA0002452256640000064
Figure BDA0002452256640000065
L14＝δ1*tan(ε1)*nair
for the zenith optical path, it is assumed that the optical paths at Wollaston polarization prism, air gap, roof-ridge glass optical wedge and the optical path from the vertical exit to the same horizontal height as the vertex of the roof-ridge prism are L21，L22，L23And L24(ii) a The offset amounts produced are respectively delta21，δ22And delta23(ii) a Total optical length of L2Total offset of delta2Then, there are:
δ2＝δ21+δ22+δ23
L2＝L21+L22+L23+L24
Figure BDA0002452256640000066
δ22＝H3*tan(β2)
by
Figure BDA0002452256640000067
The following can be obtained:
Figure BDA0002452256640000068
Figure BDA0002452256640000069
Figure BDA00024522566400000610
Figure BDA0002452256640000071
L24＝δ2*tan(ε2)*nair。
further, when the Wollaston polarizing prism and the ridge-shaped glass optical wedge are glued, H3When the thickness is 0.00mm, the following can be obtained: delta1＝0.86mm，L1＝22.03mm，δ2＝1.02mm，L222.00 mm; the optical path difference of the adjacent two imaging optical paths: Δ ═ L1-L20.03mm, two-sided imaging pitch: delta is delta1+δ2＝1.88mm；
Air gap H between Wollaston polarizing prism and roof-ridge glass optical wedge3When the thickness is 0.50mm, the value of delta can be obtained1＝0.94mm，L1＝22.52mm，δ2＝1.11mm，L222.49 mm; the optical path difference of the adjacent two imaging optical paths: Δ ═ L1-L20.03mm, two-sided imaging pitch: delta is delta1+δ2＝2.05mm；
Air gap H between Wollaston polarizing prism and roof-ridge glass optical wedge3When the thickness is 1.50mm, the value of delta can be determined1＝1.10mm，L1＝23.51mm，δ2＝1.29mm，L223.48 mm; the optical path difference of the adjacent two imaging optical paths: Δ ═ L1-L20.03mm, two-sided imaging pitch: delta is delta1+δ2＝2.39mm。
The invention discloses a method for realizing simultaneous aplanatic confocal detection of two surfaces of a crystal grain by using a polarization image splitting method, which is characterized by comprising the following steps of: the detection device comprises a CMOS or CCD camera, a telecentric imaging lens, a polarization splitting prism assembly, a polarization cubic beam splitter, a semiconductor crystal grain and a transparent glass object stage for bearing the semiconductor crystal grain, which are sequentially arranged in the direction of a light path, wherein a side right-angle rotating prism and a sky right-angle rotating prism are respectively arranged on the light path between the semiconductor crystal grain and the polarization cubic beam splitter, the side right-angle rotating prism and the sky right-angle rotating prism are respectively positioned at the right side part of the semiconductor crystal grain and right above the sky, and the polarization cubic beam splitter and the sky right-angle rotating prism are at the same horizontal height; the side right-angle relay prism and the polarization cube beam splitter are positioned on the optical axis of the telecentric imaging lens, a first right-angle surface of the side right-angle relay prism is aligned and glued with a first surface of the polarization cube beam splitter, a second right-angle surface of the side right-angle relay prism is opposite to the side surface of the semiconductor crystal grain, the inclined surface of the side right-angle relay prism is obliquely arranged with the optical axis of the telecentric imaging lens, and two right-angle surfaces of the zenith right-angle relay prism are respectively opposite to the zenith surface of the semiconductor crystal grain and the second surface of the polarization cube beam splitter; the polarization image splitting prism assembly comprises a Wollaston polarization prism attached to the third surface of the polarization cube beam splitter and a ridge prism positioned on the Wollaston polarization prism and close to one side of the telecentric imaging lens, a coaxial external illumination light source is arranged beside the fourth surface opposite to the second surface of the polarization cube beam splitter, or coaxial external illumination light sources are respectively arranged between the side surface right-angle rotating prism and the side surface of the semiconductor crystal grain and between the zenith surface right-angle rotating prism and the zenith surface of the semiconductor crystal grain, the zenith surface and the side surface of the semiconductor crystal grain are respectively subjected to polarization imaging on the sensor surface of the CMOS or CCD camera through the right-angle rotating prism, the polarization cube beam splitter and the polarization image splitting prism assembly in an equal optical path, and independent images of the two surfaces of the semiconductor crystal grain are obtained on the CMOS or CCD;
polarization imaging illumination path: when passing through the polarization cube beam splitter, the illumination light source is divided into two linearly polarized light beams with mutually vertical polarization directions, namely a p-component and an s-component; a beam of p-component polarized light illuminates the skyhook of the semiconductor crystal grain to be measured through a skyhook right-angle rotating image prism; the other beam of s-component polarized light illuminates the side surface of the semiconductor crystal grain to be tested through the side surface right-angle relay prism, and the two adjacent surfaces of the semiconductor crystal grain are respectively illuminated by the two beams of linearly polarized light with mutually vertical vibration directions;
polarization imaging optical path:
two adjacent surfaces of the semiconductor crystal grain are illuminated by two linearly polarized light beams with mutually vertical vibration directions to generate diffuse reflection light; the imaging light beam s-component of the semiconductor crystal grain skyward is reflected by a skyward right-angle rotating image prism and a polarization cubic beam splitter to enter a polarization image splitting prism component; the p-component imaging light beam on the side surface of the semiconductor crystal grain is transmitted into the polarization splitting prism assembly through the side right-angle rotating prism and the polarization cubic beam splitter, and double-sided images output from the polarization splitting prism assembly respectively obtain independent images on two sides on a common CMOS or CCD camera.
The application of the patent is based on a polarized light separation imaging (polarization splitting for short) method, and combines a polarization splitting prism assembly and uses a common CMOS or CCD camera to realize a new method for realizing simultaneous and complete aplanatic confocal imaging detection of adjacent surfaces of semiconductor crystal grains.
Description of the drawings:
FIGS. 1-4 illustrate conventional semiconductor die adjacent surface detection optics;
wherein 1 is a black and white camera, 1a is a polarization camera, 2 is a telecentric imaging lens, 3a or 3b is a relay prism, 3 is a relay optical element, 4 is a semiconductor crystal grain, 5 is a transparent glass object stage, 6 or 6a or 6b is a relay prism, 7 or 7a or 7b light source, and 8 is a controller;
FIG. 5 is a schematic diagram of the construction of one embodiment of the apparatus of the present invention;
FIG. 6 is a schematic view of the construction of another embodiment of the apparatus of the present invention;
FIG. 7 is a schematic diagram of the construction of a polarization splitting prism assembly;
fig. 8a, 8b and 8c are schematic diagrams of embodiments of polarization splitting prism assemblies.
The specific implementation mode is as follows:
the device comprises a CMOS or CCD camera 1, a telecentric imaging lens 2, a polarization imaging prism assembly 8, a polarization cube beam splitter 3, a semiconductor crystal grain and a transparent glass object stage 5 for bearing the semiconductor crystal grain, wherein the CMOS or CCD camera 1, the telecentric imaging lens 2, the polarization imaging prism assembly 8, the polarization cube beam splitter 3, the semiconductor crystal grain and the transparent glass object stage 4 are sequentially arranged in the direction of a light path; the side right-angle relay prism 6b and the polarization cube beam splitter 3 are positioned on the optical axis of the telecentric imaging lens, meanwhile, a first right-angle surface 601 of the side right-angle relay prism is aligned and glued with a first surface 301 of the polarization cube beam splitter, a second right-angle surface 602 of the side right-angle relay prism is opposite to the side surface 401 of the semiconductor crystal grain, an inclined surface 603 of the side right-angle relay prism is obliquely arranged with the optical axis of the telecentric imaging lens, and two right-angle surfaces of the zenith right-angle relay prism are respectively opposite to a zenith surface 402 of the semiconductor crystal grain and a second surface 303 of the polarization cube beam splitter; the polarization splitting prism assembly 8 comprises a Wollaston polarization prism 8a attached to the third face 303 of the polarization cube beam splitter and a roof prism 8b positioned on the Wollaston polarization prism and close to one side of the telecentric imaging lens, a coaxial external illumination light source 7 is arranged beside a fourth face 304 opposite to the second face of the polarization cube beam splitter, the top face and the side face of the semiconductor crystal grain are respectively subjected to confocal polarization imaging on the sensor face of a CMOS or CCD camera through a right-angle image rotating prism, the polarization cube beam splitter and the polarization splitting prism assembly in an equal optical path, and independent images of the two faces of the semiconductor crystal grain are obtained on the CMOS or CCD camera (as shown in figure 5).
The difference between the second embodiment and the first embodiment is that: the coaxial external illumination light sources 7 are positioned between the side surface right-angle relay prism and the side surface of the semiconductor crystal grain and between the skyhook right-angle relay prism and the skyhook of the semiconductor crystal grain (as shown in fig. 6), and the two light sources are 7a and 7b respectively.
Further, the polarization imaging illumination light path: when passing through the polarization cube beam splitter, the illumination light source is divided into two linearly polarized light beams with mutually vertical polarization directions, namely a p-component and an s-component; a beam of p-component polarized light illuminates the skyhook of the semiconductor crystal grain to be measured through a skyhook right-angle rotating image prism; and the other beam of s-component polarized light illuminates the side surface of the semiconductor crystal grain to be tested through the side surface right-angle relay prism, and the two adjacent surfaces of the semiconductor crystal grain are respectively illuminated by the two beams of linearly polarized light with mutually vertical vibration directions.
Further, the polarization imaging optical path: two adjacent surfaces of the semiconductor crystal grain are illuminated by two linearly polarized light beams with mutually vertical vibration directions to generate diffuse reflection light; the imaging light beam s-component of the semiconductor crystal grain skyward is reflected by a skyward right-angle rotating image prism and a polarization cubic beam splitter to enter a polarization image splitting prism component; the p-component imaging light beam on the side surface of the semiconductor crystal grain is transmitted into the polarization splitting prism assembly through the side right-angle rotating prism and the polarization cubic beam splitter, and double-sided images output from the polarization splitting prism assembly respectively obtain independent images on two sides on a common CMOS or CCD camera.
Further, the working distance WD of the skyhook imaging optical path is d/2, and d is the side length of the right angle of the prism; the polarization cubic beam splitter is glued with the side right-angle relay prism and the centers of the polarization cubic beam splitter are overlapped, the working distance WD of a side imaging light path is D/2+ D/2, and D is the width of the transparent glass objective table; the coaxial external illumination light source is monochromatic light or a quasi-monochromatic light source with a certain spectral bandwidth.
Furthermore, the size of the zenith right-angle relay prism is 15 × 15mm, the size of the lateral right-angle relay prism is 15 × 15mm, the size of the polarization cubic beam splitter is 15 × 15mm, the length of the Wollaston polarization prism is 10 × the width of the Wollaston polarization prism is 10 × the height of the Wollaston polarization prism is 11mm, and the length of the roof ridge prism is 10 × the width of the roof ridge prism is 10 × the height of the roof ridge prism is 3.17 mm; the working distances of the top surface and the side surface light path (the distance from the right-angle surface of the prism to the center of the crystal grain) are respectively 7.5mm and 30 mm.
Further, the images formed by the polarized light output from the adjacent surfaces of the semiconductor crystal grains from the polarization splitting prism assembly are separated in space; respectively obtaining aplanatic confocal imaging detection of the semiconductor crystal grain with separable polarization of the top surface and side surface light paths by using a common CMOS or CCD camera; or a common CMOS or CCD camera is used for respectively obtaining complete aplanatic confocal polarization imaging detection with separable 0-degree and 90-degree polarization directions of the top surface and the side surface imaging light path.
Further, the foregoing assumes that the Wollaston polarizing prism made of calcite has a dimension L1×W1×H110 × 10 × 11, the prism apex angle θ is 45 °, and the refractive indices of the o light and the e light are no1.658 and ne1.486; the ridge prism made of K9 material has a dimension of L2×W2×H210 × 10 × 3.17.17, the included angles of the left and right ridge and the horizontal direction are respectively epsilon1And ε2Refractive index of nk91.5163; the height of the air gap between the Wollaston polarizing prism and the ridge prism is H3Refractive index of air nair1.0; suppose that the side imaging beam (p-component) is incident normally as e-light to a Wollaston polarizing prismThe first prism is changed into o light in the Wollaston polarizing prism, is deflected to the left side and is finally imaged on the left side of the camera; a skyhook imaging light beam (s-component) is vertically incident to a first prism of a Wollaston polarizing prism as o light, is changed into e light at a second prism of the Wollaston polarizing prism, deviates to the right side and is finally imaged on the right side of the camera;
assume that the refraction angle of the side light path from the first Wollaston polarizer to the second Wollaston polarizer is α1The angle of refraction from the exit of the Wollaston polarizer to the air gap is β1The angle of refraction incident on the roof-ridge prism from the air gap is gamma1Then there are:
Figure BDA0002452256640000121
Figure BDA0002452256640000122
Figure BDA0002452256640000123
Figure BDA0002452256640000124
for the zenith path, assume that the angle of refraction incident from the first to the second Wollaston polarizer is α2The angle of refraction from the exit of the Wollaston polarizer to the air gap is β2The angle of refraction from the air gap into the ridge prism is gamma2Then there are:
Figure BDA0002452256640000125
Figure BDA0002452256640000126
Figure BDA0002452256640000127
Figure BDA0002452256640000128
assuming that the optical paths of the side light paths in the Wollaston polarizing prism, the air gap, the roof ridge prism and the optical paths from the vertical outgoing light to the same horizontal height as the vertex of the roof ridge prism are L respectively11，L12，L13And L14(ii) a The offset amounts produced are respectively delta11，δ12And delta13(ii) a Total optical length of L1Total offset of delta1Then, there are:
δ1＝δ11+δ12+δ13
L1＝L11+L12+L13+L14
Figure BDA0002452256640000129
δ12＝H3*tan(β1)
by
Figure BDA0002452256640000131
The following can be obtained:
Figure BDA0002452256640000132
Figure BDA0002452256640000133
Figure BDA0002452256640000134
Figure BDA0002452256640000135
L14＝δ1*tan(ε1)*nair
for the zenith optical path, it is assumed that the optical paths at Wollaston polarization prism, air gap, roof-ridge glass optical wedge and the optical path from the vertical exit to the same horizontal height as the vertex of the roof-ridge prism are L21，L22，L23And L24(ii) a The offset amounts produced are respectively delta21，δ22And delta23(ii) a Total optical length of L2Total offset of delta2Then, there are:
δ2＝δ21+δ22+δ23
L2＝L21+L22+L23+L24
Figure BDA0002452256640000136
δ22＝H3*tan(β2)
by
Figure BDA0002452256640000137
The following can be obtained:
Figure BDA0002452256640000138
Figure BDA0002452256640000139
Figure BDA00024522566400001310
Figure BDA0002452256640000141
L24＝δ2*tan(ε2)*nair。
when the Wollaston polarizing prism is glued with the ridge-shaped glass optical wedge, H3When the thickness is 0.00mm, the following can be obtained: delta1＝0.86mm，L1＝22.03mm，δ2＝1.02mm，L222.00 mm; the optical path difference of the adjacent two imaging optical paths: Δ ═ L1-L20.03mm, two-sided imaging pitch: delta is delta1+δ2＝1.88mm；
Air gap H between Wollaston polarizing prism and roof-ridge glass optical wedge3When the thickness is 0.50mm, the value of delta can be obtained1＝0.94mm，L1＝22.52mm，δ2＝1.11mm，L222.49 mm; the optical path difference of the adjacent two imaging optical paths: Δ ═ L1-L20.03mm, two-sided imaging pitch: delta is delta1+δ2＝2.05mm；
Air gap H between Wollaston polarizing prism and roof-ridge glass optical wedge3When the thickness is 1.50mm, the value of delta can be determined1＝1.10mm，L1＝23.51mm，δ2＝1.29mm，L223.48 mm; the optical path difference of the adjacent two imaging optical paths: Δ ═ L1-L20.03mm, two-sided imaging pitch: delta is delta1+δ2＝2.39mm。
The invention adopts a polarization splitting prism component to spatially separate the independent polarization imaging light paths of two surfaces and then obtains images by a lens and a common camera, which is different from the prior patent application (application number 202010250856X), wherein the application number 202010250856X completely overlaps the independent polarization imaging light paths of the two surfaces before entering the lens and the camera in space, and the two images are obtained by two quadrants of a special polarization camera.
The invention discloses a method for realizing simultaneous aplanatic confocal detection of two surfaces of a crystal grain by using a polarization image splitting method, which is characterized by comprising the following steps of: the detection device comprises a CMOS or CCD camera, a telecentric imaging lens, a polarization splitting prism assembly, a polarization cubic beam splitter, a semiconductor crystal grain and a transparent glass object stage for bearing the semiconductor crystal grain, which are sequentially arranged in the direction of a light path, wherein a side right-angle rotating prism and a sky right-angle rotating prism are respectively arranged on the light path between the semiconductor crystal grain and the polarization cubic beam splitter, the side right-angle rotating prism and the sky right-angle rotating prism are respectively positioned at the right side part of the semiconductor crystal grain and right above the sky, and the polarization cubic beam splitter and the sky right-angle rotating prism are at the same horizontal height; the side right-angle relay prism and the polarization cube beam splitter are positioned on the optical axis of the telecentric imaging lens, a first right-angle surface of the side right-angle relay prism is aligned and glued with a first surface of the polarization cube beam splitter, a second right-angle surface of the side right-angle relay prism is opposite to the side surface of the semiconductor crystal grain, the inclined surface of the side right-angle relay prism is obliquely arranged with the optical axis of the telecentric imaging lens, and two right-angle surfaces of the zenith right-angle relay prism are respectively opposite to the zenith surface of the semiconductor crystal grain and the second surface of the polarization cube beam splitter; the polarization image splitting prism assembly comprises a Wollaston polarization prism attached to the third surface of the polarization cube beam splitter and a ridge prism positioned on the Wollaston polarization prism and close to one side of the telecentric imaging lens, a coaxial external illumination light source is arranged beside the fourth surface opposite to the second surface of the polarization cube beam splitter, or coaxial external illumination light sources are respectively arranged between the side surface right-angle rotating prism and the side surface of the semiconductor crystal grain and between the zenith surface right-angle rotating prism and the zenith surface of the semiconductor crystal grain, the zenith surface and the side surface of the semiconductor crystal grain are respectively subjected to polarization imaging on the sensor surface of the CMOS or CCD camera through the right-angle rotating prism, the polarization cube beam splitter and the polarization image splitting prism assembly in an equal optical path, and independent images of the two surfaces of the semiconductor crystal grain are obtained on the CMOS or CCD;
polarization imaging illumination path: when passing through the polarization cube beam splitter, the illumination light source is divided into two linearly polarized light beams with mutually vertical polarization directions, namely a p-component and an s-component; a beam of p-component polarized light illuminates the skyhook of the semiconductor crystal grain to be measured through a skyhook right-angle rotating image prism; the other beam of s-component polarized light illuminates the side surface of the semiconductor crystal grain to be tested through the side surface right-angle relay prism, and the two adjacent surfaces of the semiconductor crystal grain are respectively illuminated by the two beams of linearly polarized light with mutually vertical vibration directions;
polarization imaging optical path:
two adjacent surfaces of the semiconductor crystal grain are illuminated by two linearly polarized light beams with mutually vertical vibration directions to generate diffuse reflection light; the imaging light beam s-component of the semiconductor crystal grain skyward is reflected by a skyward right-angle rotating image prism and a polarization cubic beam splitter to enter a polarization image splitting prism component; the p-component imaging light beam on the side surface of the semiconductor crystal grain is transmitted into the polarization splitting prism assembly through the side right-angle rotating prism and the polarization cubic beam splitter, and double-sided images output from the polarization splitting prism assembly respectively obtain independent images on two sides on a common CMOS or CCD camera.
The application polarization cube beam splitter: the conventional polarizing optical element is produced by Fujianfurt optoelectronic Co., Ltd, and is formed by plating a polarizing beam splitting film on the inclined surface of a right-angle prism and then gluing the inclined surface of the right-angle prism with the inclined surface of another right-angle prism of the same size.
The invention has the advantages of detecting the new device:
1) the method comprises the steps of simultaneously performing aplanatic confocal polarization imaging detection on two adjacent surfaces of a semiconductor crystal grain, namely △ (or quasi aplanatic confocal imaging detection, △ (approximately) 0), and compensating optical path difference of two-surface polarization imaging without using a large-depth-of-field telecentric lens;
2) the utilization rate of illumination light of the polarization beam splitter is up to 100 percent, the illumination efficiency of the dual-optical-path dual-polarization illumination object is high, and the light utilization rate of the common beam splitter prism is 50 percent;
3) the double-sided polarized imaging light path adjacent to the semiconductor crystal grain can realize complete equal-illumination;
4) two polarized imaging beams with mutually perpendicular polarization directions are obtained by adopting a specially designed polarization splitting prism assembly, the polarization splitting prism assembly is composed of a Wollaston polarization prism, namely a Wollaston polarization prism (or Rochon or Se' narmont polarization prism) and a matched ridge prism, and the distance delta of the double-sided images depends on the optical design of the polarization splitting prism assembly and can be selected to be 1.8-2.5 mm.
5) An ordinary CMOS or CCD camera is adopted to separate two imaging light paths with different polarizations (polarization directions of 0 degree and 90 degrees) and simultaneously acquire images of two adjacent surfaces, so that the image processing time is short and the speed is high; the cost of a common CMOS or CCD camera is about 10 percent of that of a polarization camera; the cost of the detection system can be effectively reduced even if the cost of the polarization splitting prism assembly is increased.
6) The semiconductor crystal grain adjacent double-side simultaneous polarization imaging detection device is simple and compact in structure and easy to assemble and debug.
Finally, it should be noted that the above examples are only used to illustrate the technical solutions of the present invention and not to limit the same; although the present invention has been described in detail with reference to preferred embodiments, those skilled in the art will understand that: modifications to the specific embodiments of the invention or equivalent substitutions for parts of the technical features may be made; without departing from the spirit of the present invention, it is intended to cover all aspects of the invention as defined by the appended claims.

Claims (10)

1. A device for realizing the simultaneous aplanatic confocal detection of two surfaces of a crystal grain by using a polarization image splitting method is characterized in that: the system comprises a CMOS or CCD camera, a telecentric imaging lens, a polarization image-splitting prism component, a polarization cubic beam splitter, a semiconductor crystal grain and a transparent glass objective table for bearing the semiconductor crystal grain, which are sequentially arranged in the direction of a light path, wherein a side right-angle image-rotating prism and a sky right-angle image-rotating prism are respectively arranged on the light path between the semiconductor crystal grain and the polarization cubic beam splitter, the side right-angle image-rotating prism and the sky right-angle image-rotating prism are respectively positioned at the right side part of the semiconductor crystal grain and right above the sky, and the polarization cubic beam splitter and the sky right-angle image-rotating prism are at the same horizontal height; the side right-angle relay prism and the polarization cube beam splitter are positioned on the optical axis of the telecentric imaging lens, a first right-angle surface of the side right-angle relay prism is aligned and glued with a first surface of the polarization cube beam splitter, a second right-angle surface of the side right-angle relay prism is opposite to the side surface of the semiconductor crystal grain, the inclined surface of the side right-angle relay prism is obliquely arranged with the optical axis of the telecentric imaging lens, and two right-angle surfaces of the zenith right-angle relay prism are respectively opposite to the zenith surface of the semiconductor crystal grain and the second surface of the polarization cube beam splitter; the polarization image splitting prism assembly comprises a Wollaston polarization prism attached to the third surface of the polarization cube beam splitter and a roof prism located on the Wollaston polarization prism and close to one side of the telecentric imaging lens, a coaxial external illumination light source is arranged beside the fourth surface opposite to the second surface of the polarization cube beam splitter, the top surface and the side surface of the semiconductor crystal grain are respectively imaged on the sensor surface of the CMOS or CCD camera in an aplanatic confocal polarization mode through the right-angle image turning prism, the polarization cube beam splitter and the polarization image splitting prism assembly, and independent images of the two surfaces of the semiconductor crystal grain are obtained on the CMOS or CCD camera.
2. A device for realizing the simultaneous aplanatic confocal detection of two surfaces of a crystal grain by using a polarization image splitting method is characterized in that: the system comprises a CMOS or CCD camera, a telecentric imaging lens, a polarization image-splitting prism component, a polarization cubic beam splitter, a semiconductor crystal grain and a transparent glass objective table for bearing the semiconductor crystal grain, which are sequentially arranged in the direction of a light path, wherein a side right-angle image-rotating prism and a sky right-angle image-rotating prism are respectively arranged on the light path between the semiconductor crystal grain and the polarization cubic beam splitter, the side right-angle image-rotating prism and the sky right-angle image-rotating prism are respectively positioned at the right side part of the semiconductor crystal grain and right above the sky, and the polarization cubic beam splitter and the sky right-angle image-rotating prism are at the same horizontal height; the side right-angle relay prism and the polarization cube beam splitter are positioned on the optical axis of the telecentric imaging lens, a first right-angle surface of the side right-angle relay prism is aligned and glued with a first surface of the polarization cube beam splitter, a second right-angle surface of the side right-angle relay prism is opposite to the side surface of the semiconductor crystal grain, the inclined surface of the side right-angle relay prism is obliquely arranged with the optical axis of the telecentric imaging lens, and two right-angle surfaces of the zenith right-angle relay prism are respectively opposite to the zenith surface of the semiconductor crystal grain and the second surface of the polarization cube beam splitter; the polarization image splitting prism assembly comprises a Wollaston polarization prism attached to the third surface of the polarization cube beam splitter and a roof prism positioned on the Wollaston polarization prism and close to one side of the telecentric imaging lens, coaxial external illumination light sources are respectively arranged between the side surface right-angle rotating prism and the side surface of the semiconductor crystal grain, and between the top surface right-angle rotating prism and the top surface of the semiconductor crystal grain, the top surface and the side surface of the semiconductor crystal grain are respectively imaged on the sensor surface of the CMOS or CCD camera in an aplanatic confocal polarization mode through the right-angle rotating prism, the polarization cube beam splitter and the polarization image splitting prism assembly, and independent images of the two surfaces of the semiconductor crystal grain are obtained on the CMOS or CCD camera.
3. The device for realizing the confocal detection of the double surfaces of the crystal grains simultaneously in the aplanatism by using the polarization image splitting method as claimed in claim 1 or 2, wherein: polarization imaging illumination path: when passing through the polarization cube beam splitter, the illumination light source is divided into two linearly polarized light beams with mutually vertical polarization directions, namely a p-component and an s-component; a beam of p-component polarized light illuminates the skyhook of the semiconductor crystal grain to be measured through a skyhook right-angle rotating image prism; and the other beam of s-component polarized light illuminates the side surface of the semiconductor crystal grain to be tested through the side surface right-angle relay prism, and the two adjacent surfaces of the semiconductor crystal grain are respectively illuminated by the two beams of linearly polarized light with mutually vertical vibration directions.
4. The device for realizing the confocal detection of the double surfaces of the crystal grains simultaneously in the aplanatism by using the polarization image splitting method as claimed in claim 3, wherein: two adjacent surfaces of the semiconductor crystal grain are illuminated by two linearly polarized light beams with mutually vertical vibration directions to generate diffuse reflection light; the imaging light beam s-component of the semiconductor crystal grain skyward is reflected by a skyward right-angle rotating image prism and a polarization cubic beam splitter to enter a polarization image splitting prism component; the p-component imaging light beam on the side surface of the semiconductor crystal grain is transmitted into the polarization splitting prism assembly through the side right-angle rotating prism and the polarization cubic beam splitter, and double-sided images output from the polarization splitting prism assembly respectively obtain independent images on two sides on a common CMOS or CCD camera.
5. The device for realizing the confocal detection of the double surfaces of the crystal grains simultaneously in the aplanatism by using the polarization image splitting method as claimed in claim 1 or 2, wherein: the working distance WD of the imaging optical path of the sky is d/2, and d is the side length of a right angle of the prism; the polarization cubic beam splitter is glued with the side right-angle relay prism and the centers of the polarization cubic beam splitter are overlapped, the working distance WD of a side imaging light path is D/2+ D/2, and D is the width of the transparent glass objective table; the coaxial external illumination light source is monochromatic light or a quasi-monochromatic light source with a certain spectral bandwidth.
6. The device for realizing the confocal detection of the double surfaces of the crystal grains simultaneously in the aplanatism by using the polarization image splitting method as claimed in claim 1 or 2, wherein: the size of the zenith right-angle relay prism is 15 × 15mm, the size of the side right-angle relay prism is 15 × 15mm, the size of the polarization cubic beam splitter is 15 × 15mm, the length of the Wollaston polarization prism is 10 × the width of the Wollaston polarization prism is 10 × the height of the Wollaston polarization prism is 11mm, and the length of the roof ridge prism is 10 × the width of the Wollaston polarization prism is 10 × the height of the Wollaston polarization prism is 3.17 mm.
7. The device for realizing the confocal detection of the double surfaces of the crystal grains simultaneously in the aplanatism by using the polarization image splitting method as claimed in claim 1 or 2, wherein: outputting images formed by polarized light of the adjacent surfaces of the semiconductor crystal grains from the polarization splitting prism assembly in a space separation mode; respectively obtaining aplanatic confocal imaging detection of the semiconductor crystal grain with separable polarization of the top surface and side surface light paths by using a common CMOS or CCD camera; or a common CMOS or CCD camera is used for respectively obtaining complete aplanatic confocal polarization imaging detection with separable 0-degree and 90-degree polarization directions of the top surface and the side surface imaging light path.
8. The device for realizing the confocal detection of the double surfaces of the crystal grains simultaneously in the aplanatism by using the polarization image splitting method as claimed in claim 1 or 2, wherein: assuming a Wollaston polarizing prism made of calcite with a dimension L1×W1×H110 × 10 × 11, the prism apex angle θ is 45 °, and the refractive indices of the o light and the e light are no1.658 and ne1.486; the ridge prism made of K9 material has a dimension of L2×W2×H210 × 10 × 3.17.17, the included angles of the left and right ridge and the horizontal direction are respectively epsilon1And ε2Refractive index of nk91.5163; the height of the air gap between the Wollaston polarizing prism and the ridge prism is H3Refractive index of air nair1.0; assuming that a side imaging light beam (p-component) is vertically incident to a first prism of a Wollaston polarizing prism as e light, the e light beam is changed into o light at a second prism of the Wollaston polarizing prism, and the o light beam is deflected to the left side and finally imaged on the left side of a camera; a skyhook imaging light beam (s-component) is vertically incident to a first prism of a Wollaston polarizing prism as o light, is changed into e light at a second prism of the Wollaston polarizing prism, deviates to the right side and is finally imaged on the right side of the camera;
assume that the refraction angle of the side light path from the first Wollaston polarizer to the second Wollaston polarizer is α1The angle of refraction from the exit of the Wollaston polarizer to the air gap is β1From the air gap intoThe refraction angle to the ridge prism is gamma1Then there are:
Figure FDA0002452256630000041
Figure FDA0002452256630000042
Figure FDA0002452256630000043
Figure FDA0002452256630000044
for the zenith path, assume that the angle of refraction incident from the first to the second Wollaston polarizer is α2The angle of refraction from the exit of the Wollaston polarizer to the air gap is β2The angle of refraction from the air gap into the ridge prism is gamma2Then there are:
Figure FDA0002452256630000045
Figure FDA0002452256630000046
Figure FDA0002452256630000047
Figure FDA0002452256630000048
assuming that the optical paths of the side light paths in the Wollaston polarizing prism, the air gap, the roof ridge prism and the optical paths from the vertical outgoing light to the same horizontal height as the vertex of the roof ridge prism are L respectively11，L12，L13And L14(ii) a The offset amounts produced are respectively delta11，δ12And delta13(ii) a Total optical length of L1Total offset of delta1Then, there are:
δ1＝δ11+δ12+δ13
L1＝L11+L12+L13+L14
Figure FDA0002452256630000051
δ12＝H3*tan(β1)
by
Figure FDA0002452256630000052
The following can be obtained:
Figure FDA0002452256630000053
Figure FDA0002452256630000054
Figure FDA0002452256630000055
Figure FDA0002452256630000056
L14＝δ1*tan(ε1)*nair
for the zenith optical path, it is assumed that the optical paths at Wollaston polarization prism, air gap, roof-ridge glass optical wedge and the optical path from the vertical exit to the same horizontal height as the vertex of the roof-ridge prism are L21，L22，L23And L24(ii) a The offset amounts produced are respectively delta21，δ22And delta23(ii) a Total optical length of L2Total offset of delta2Then, there are:
δ2＝δ21+δ22+δ23
L2＝L21+L22+L23+L24
Figure FDA0002452256630000057
δ22＝H3*tan(β2)
by
Figure FDA0002452256630000058
The following can be obtained:
Figure FDA0002452256630000059
Figure FDA0002452256630000061
Figure FDA0002452256630000062
Figure FDA0002452256630000063
L24＝δ2*tan(ε2)*nair。
9. the device for realizing confocal detection of double surfaces of crystal grains by using the polarization image splitting method according to claim 8, wherein the confocal detection device comprises:
when the Wollaston polarizing prism is glued with the ridge-shaped glass optical wedge, H3When the thickness is 0.00mm, the following can be obtained: delta1＝0.86mm，L1＝22.03mm，δ2＝1.02mm，L222.00 mm; the optical path difference of the adjacent two imaging optical paths: Δ ═ L1-L20.03mm, two-sided imaging pitch: delta ═δ1+δ2＝1.88mm；
Air gap H between Wollaston polarizing prism and roof-ridge glass optical wedge3When the thickness is 0.50mm, the value of delta can be obtained1＝0.94mm，L1＝22.52mm，δ2＝1.11mm，L222.49 mm; the optical path difference of the adjacent two imaging optical paths: Δ ═ L1-L20.03mm, two-sided imaging pitch: delta is delta1+δ2＝2.05mm；
Air gap H between Wollaston polarizing prism and roof-ridge glass optical wedge3When the thickness is 1.50mm, the value of delta can be determined1＝1.10mm，L1＝23.51mm，δ2＝1.29mm，L223.48 mm; the optical path difference of the adjacent two imaging optical paths: Δ ═ L1-L20.03mm, two-sided imaging pitch: delta is delta1+δ2＝2.39mm。
10. A method for realizing simultaneous aplanatism confocal detection of two surfaces of a crystal grain by using a polarization split image method is characterized by comprising the following steps: the detection device comprises a CMOS or CCD camera, a telecentric imaging lens, a polarization splitting prism assembly, a polarization cubic beam splitter, a semiconductor crystal grain and a transparent glass object stage for bearing the semiconductor crystal grain, which are sequentially arranged in the direction of a light path, wherein a side right-angle rotating prism and a sky right-angle rotating prism are respectively arranged on the light path between the semiconductor crystal grain and the polarization cubic beam splitter, the side right-angle rotating prism and the sky right-angle rotating prism are respectively positioned at the right side part of the semiconductor crystal grain and right above the sky, and the polarization cubic beam splitter and the sky right-angle rotating prism are at the same horizontal height; the side right-angle relay prism and the polarization cube beam splitter are positioned on the optical axis of the telecentric imaging lens, a first right-angle surface of the side right-angle relay prism is aligned and glued with a first surface of the polarization cube beam splitter, a second right-angle surface of the side right-angle relay prism is opposite to the side surface of the semiconductor crystal grain, the inclined surface of the side right-angle relay prism is obliquely arranged with the optical axis of the telecentric imaging lens, and two right-angle surfaces of the zenith right-angle relay prism are respectively opposite to the zenith surface of the semiconductor crystal grain and the second surface of the polarization cube beam splitter; the polarization image splitting prism assembly comprises a Wollaston polarization prism attached to the third surface of the polarization cube beam splitter and a ridge prism positioned on the Wollaston polarization prism and close to one side of the telecentric imaging lens, a coaxial external illumination light source is arranged beside the fourth surface opposite to the second surface of the polarization cube beam splitter, or coaxial external illumination light sources are respectively arranged between the side surface right-angle rotating prism and the side surface of the semiconductor crystal grain and between the zenith surface right-angle rotating prism and the zenith surface of the semiconductor crystal grain, the zenith surface and the side surface of the semiconductor crystal grain are respectively subjected to polarization imaging on the sensor surface of the CMOS or CCD camera through the right-angle rotating prism, the polarization cube beam splitter and the polarization image splitting prism assembly in an equal optical path, and independent images of the two surfaces of the semiconductor crystal grain are obtained on the CMOS or CCD;
polarization imaging illumination path: when passing through the polarization cube beam splitter, the illumination light source is divided into two linearly polarized light beams with mutually vertical polarization directions, namely a p-component and an s-component; a beam of p-component polarized light illuminates the skyhook of the semiconductor crystal grain to be measured through a skyhook right-angle rotating image prism; the other beam of s-component polarized light illuminates the side surface of the semiconductor crystal grain to be tested through the side surface right-angle relay prism, and the two adjacent surfaces of the semiconductor crystal grain are respectively illuminated by the two beams of linearly polarized light with mutually vertical vibration directions;
polarization imaging optical path:
two adjacent surfaces of the semiconductor crystal grain are illuminated by two linearly polarized light beams with mutually vertical vibration directions to generate diffuse reflection light; the imaging light beam s-component of the semiconductor crystal grain skyward is reflected by a skyward right-angle rotating image prism and a polarization cubic beam splitter to enter a polarization image splitting prism component; the p-component imaging light beam on the side surface of the semiconductor crystal grain is transmitted into the polarization splitting prism assembly through the side right-angle rotating prism and the polarization cubic beam splitter, and double-sided images output from the polarization splitting prism assembly respectively obtain independent images on two sides on a common CMOS or CCD camera.
CN202010296134.8A 2020-04-15 2020-04-15 Device and method for realizing simultaneous aplanatic confocal detection of double surfaces of crystal grains by using polarization image splitting method Pending CN111366541A (en)

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Publication number Priority date Publication date Assignee Title
CN114994079A (en) * 2022-08-01 2022-09-02 苏州高视半导体技术有限公司 Optical assembly and optical system for wafer detection
CN114994079B (en) * 2022-08-01 2022-12-02 苏州高视半导体技术有限公司 Optical assembly and optical system for wafer detection

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