CN115561128B - Device and method for realizing asynchronous imaging detection of two end faces of semiconductor crystal grain - Google Patents
Device and method for realizing asynchronous imaging detection of two end faces of semiconductor crystal grain Download PDFInfo
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Abstract
The invention relates to a device and a method for realizing asynchronous imaging detection of two end faces of a semiconductor crystal grain, which are characterized in that: the device for realizing asynchronous imaging detection of two end faces of the semiconductor crystal grain is sequentially provided with a camera, a telecentric imaging lens, two groups of symmetrically arranged right-angle relay prisms, the semiconductor crystal grain and a glass carrying turntable in the light path direction of the optical device, wherein the two groups of symmetrically arranged right-angle relay prisms are positioned on the optical axis of the telecentric imaging lens; the detection device and the detection method simplify the structure of the system, reduce the manufacturing cost of the system and are beneficial to improving the reliability of the system, and in addition, at least two transmission surfaces and one total reflection surface are reduced on the light path, so that the superposition error generated by the processing error of a plurality of prisms can be reduced.
Description
Technical Field
The invention relates to an optical instrument in the field of semiconductors, in particular to a device and a method for realizing asynchronous imaging detection of two end faces of a semiconductor crystal grain.
Background
The traditional machine vision optical detection device mainly comprises a camera, an imaging lens, an illumination light source, image processing algorithm software, an electric control device, a mechanical structure, an object to be detected (such as a semiconductor refrigerating device crystal grain) and the like, wherein the object is illuminated by the light source, the object obtains an image of the object on a CCD detector surface through the optical imaging lens, the image is transmitted to a computer through an image acquisition card and an A-D conversion module, finally, required image information is obtained through a digital image processing technology, and the size, the shape and the color are distinguished and measured according to information such as pixel distribution, brightness and color, so that the on-site equipment operation is controlled.
The disclosed invention patent: the device and the method (publication number CN 111157535A) for detecting the simultaneous aplanatic imaging and the isoluminance illumination of the double surfaces of the crystal grain based on the image combination optical element provide that two groups of trapezoidal image transfer prisms and one image combination optical element are used for realizing the simultaneous aplanatic imaging of the double surfaces of the crystal grain.
Other disclosed invention patents: an optical device and a method for realizing asynchronous aplanatic imaging detection of two end faces and two side faces of a semiconductor crystal grain (publication No. CN 114624245B) and synchronous aplanatic imaging detection of four faces of the semiconductor crystal grain (publication No. CN 114951037A) provide an optical device and a method for asynchronous imaging detection of front and rear end faces or four faces of the crystal grain in the moving direction of an objective table, the two methods both need to use 2 groups of four right-angle turning prisms and one image combining prism, the structure is relatively complex, the assembling and debugging freedom degree is increased, but the reliability risk of the system is increased.
The invention content is as follows:
in view of the above problems in the prior art, the present invention provides an apparatus and a method for implementing asynchronous imaging detection of two end faces of a semiconductor die, which simplifies the system structure, reduces the system cost, and improves the system reliability.
The invention discloses a device for realizing asynchronous imaging detection of two end faces of a semiconductor crystal grain, which is characterized in that: the optical device is characterized in that a camera, a telecentric imaging lens, two groups of symmetrically arranged right-angle rotating prisms, a semiconductor crystal grain and a glass carrying turntable are sequentially arranged in the optical path direction of the optical device, and the two groups of symmetrically arranged right-angle rotating prisms are positioned on the optical axis of the telecentric imaging lens;
the two groups of symmetrically arranged right-angle image rotating prisms comprise a first right-angle image rotating prism and a second right-angle image rotating prism, the first right-angle image rotating prism and the second right-angle image rotating prism are symmetrical about a first symmetrical central plane, and the first symmetrical central plane is parallel to two end faces of the semiconductor crystal grain to be detected and penetrates through an optical axis of the telecentric imaging lens;
under the condition that the first right-angle image rotating prism and the second right-angle image rotating prism do not rotate, first right-angle surfaces of the first right-angle image rotating prism and the second right-angle image rotating prism are parallel to an optical axis of the telecentric imaging lens, second right-angle surfaces of the first right-angle image rotating prism and the second right-angle image rotating prism are perpendicular to the optical axis of the telecentric imaging lens and are close to the telecentric imaging lens, inclined surfaces of the first right-angle image rotating prism and the second right-angle image rotating prism are close to the optical axis of the telecentric imaging lens and form a 45-degree included angle with the telecentric imaging lens, the inclined surfaces of the first right-angle image rotating prism and the second right-angle image rotating prism are total reflection surfaces, and the first right-angle surfaces and the second right-angle surface of the first right-angle image rotating prism and the second right-angle image rotating prism are transmission surfaces;
when the first right-angle image rotating prism rotates anticlockwise for an orientation angle theta by taking a right-angle end point as a circle center and the second right-angle image rotating prism rotates clockwise for an orientation angle theta by taking the right-angle end point as the circle center, the theta =1-45 degrees, so that the inclined planes of the first right-angle image rotating prism and the second right-angle image rotating prism form an included angle of 45-theta with the optical axis of the telecentric imaging lens, the first right-angle surfaces of the first right-angle image rotating prism and the second right-angle image rotating prism form an included angle of theta with the optical axis of the telecentric imaging lens, and the second right-angle surfaces of the first right-angle image rotating prism and the second right-angle image rotating prism form an included angle of 90+ theta with the optical axis of the telecentric imaging lens.
Further, the distance d =0.5-2.0mm between the lower ends of the first right-angle rotating image prism and the semiconductor crystal grain top surface.
Further, θ =1 to 5 degrees.
The invention discloses a device for realizing asynchronous imaging detection of two end faces of a semiconductor crystal grain, which is characterized in that: a camera, a telecentric imaging lens, a transfer and image combination prism, a semiconductor crystal grain and a glass carrying turntable are sequentially arranged in the optical path direction of the optical device, and the transfer and image combination prism is positioned on the optical axis of the telecentric imaging lens;
the rotating image and image combination combined prism is in a cuboid shape, the top surface of the rotating image and image combination combined prism is perpendicular to the optical axis of the telecentric imaging lens, two opposite side wall surfaces of the rotating image and image combination combined prism are parallel to the optical axis of the telecentric imaging lens, and the two opposite side wall surfaces are imaging input surfaces; a groove with an inverted V-shaped cross section is arranged in the lower part of the combined image rotating and combining prism, two inclined planes of the groove are total reflection planes, the zenith plane of the combined image rotating and combining prism is an imaging output plane, two opposite side wall planes and two inclined planes of the groove are symmetrical about a second symmetrical central plane, and the second symmetrical central plane is parallel to two end faces of the semiconductor crystal grain to be detected and passes through the optical axis of the telecentric imaging lens;
an included angle epsilon is formed between the two inclined planes of the groove and the surface of the glass carrying turntable, 90-epsilon is formed between the two inclined planes of the groove and the optical axis of the telecentric imaging lens, and epsilon =1-90 degrees.
Furthermore, the distance d =0.5-2.0mm between the lower end surface of the combined image transfer and synthesis prism and the semiconductor crystal grain top surface.
The invention discloses a method for realizing asynchronous imaging detection of two end faces of a semiconductor crystal grain, which is characterized by comprising the following steps: the optical device is characterized in that a camera, a telecentric imaging lens, two groups of symmetrically arranged right-angle rotating prisms, a semiconductor crystal grain and a glass carrying turntable are sequentially arranged in the optical path direction of the optical device, and the two groups of symmetrically arranged right-angle rotating prisms are positioned on the optical axis of the telecentric imaging lens;
the two groups of symmetrically arranged right-angle image rotating prisms comprise a first right-angle image rotating prism and a second right-angle image rotating prism, the first right-angle image rotating prism and the second right-angle image rotating prism are symmetrical about a first symmetrical central plane, and the first symmetrical central plane is parallel to two end faces of the semiconductor crystal grain to be detected and penetrates through an optical axis of the telecentric imaging lens;
under the condition that the first right-angle image rotating prism and the second right-angle image rotating prism do not rotate, first right-angle surfaces of the first right-angle image rotating prism and the second right-angle image rotating prism are parallel to an optical axis of the telecentric imaging lens, second right-angle surfaces of the first right-angle image rotating prism and the second right-angle image rotating prism are perpendicular to the optical axis of the telecentric imaging lens and are close to the telecentric imaging lens, inclined surfaces of the first right-angle image rotating prism and the second right-angle image rotating prism are close to the optical axis of the telecentric imaging lens and form a 45-degree included angle with the telecentric imaging lens, the inclined surfaces of the first right-angle image rotating prism and the second right-angle image rotating prism are total reflection surfaces, and the first right-angle surfaces and the second right-angle surface of the first right-angle image rotating prism and the second right-angle image rotating prism are transmission surfaces;
when the first right-angle image rotating prism rotates anticlockwise for an orientation angle theta by taking a right-angle end point as a circle center and the second right-angle image rotating prism rotates clockwise for an orientation angle theta by taking the right-angle end point as the circle center, the theta =1-45 degrees, so that the inclined planes of the first right-angle image rotating prism and the second right-angle image rotating prism form an included angle of 45-theta with the optical axis of the telecentric imaging lens, the first right-angle surfaces of the first right-angle image rotating prism and the second right-angle image rotating prism form an included angle of theta with the optical axis of the telecentric imaging lens, and the second right-angle surfaces of the first right-angle image rotating prism and the second right-angle image rotating prism form an included angle of 90+ theta with the optical axis of the telecentric imaging lens;
when the semiconductor crystal grain is positioned at the left side of the detection device, when the distance between the front end surface of the semiconductor crystal grain in the traveling direction and the first right-angle rotating image prism is a given working distance WD, the front end surface is imaged on the camera sensor after being rotated by the first right-angle rotating image prism, and the imaging is a first image;
when the semiconductor crystal grain is positioned at the right side of the detection device, the distance between the rear end surface of the semiconductor crystal grain in the traveling direction and the second right-angle relay prism is a given working distance WD, the rear end surface is imaged on the camera sensor after being relayed by the second right-angle relay prism, and the imaging is a second image;
the first image and the second image are front end face images and rear end face images of the semiconductor crystal grains acquired by the same image acquisition device at different time points in sequence, and asynchronous imaging detection of two end faces is realized.
The invention discloses a method for realizing asynchronous imaging detection of two end faces of a semiconductor crystal grain, which is characterized by comprising the following steps: a camera, a telecentric imaging lens, a transfer and image combination prism, a semiconductor crystal grain and a glass carrying turntable are sequentially arranged in the optical path direction of the optical device, and the transfer and image combination prism is positioned on the optical axis of the telecentric imaging lens;
the rotating image and image combination combined prism is in a cuboid shape, the top surface of the rotating image and image combination combined prism is perpendicular to the optical axis of the telecentric imaging lens, two opposite side wall surfaces of the rotating image and image combination combined prism are parallel to the optical axis of the telecentric imaging lens, and the two opposite side wall surfaces are imaging input surfaces; a groove with an inverted V-shaped cross section is arranged in the lower part of the combined image rotating and combining prism, two inclined planes of the groove are total reflection planes, the zenith plane of the combined image rotating and combining prism is an imaging output plane, two opposite side wall planes and two inclined planes of the groove are symmetrical about a second symmetrical central plane, and the second symmetrical central plane is parallel to two end faces of the semiconductor crystal grain to be detected and passes through the optical axis of the telecentric imaging lens;
an included angle epsilon is formed between the two inclined planes of the groove and the surface of the glass carrying turntable, 90-epsilon is formed between the two inclined planes of the groove and the optical axis of the telecentric imaging lens, and epsilon =1-90 degrees;
when the semiconductor crystal grain is positioned at the left side of the detection device, when the distance from the front end face of the semiconductor crystal grain to the first side wall surface of the transfer and image combination combined prism in the traveling direction is a given working distance WD, the front end face of the semiconductor crystal grain is subjected to image transfer through the first side wall surface, the first inclined surface and the zenith surface of the transfer and image combination prism and then imaged on the camera sensor, and the image is a first image;
when the semiconductor crystal grain is positioned at the right side of the detection device, when the distance from the rear end face of the semiconductor crystal grain to the second side wall surface of the transfer and image combination combined prism in the traveling direction is a given working distance WD, the rear end face of the semiconductor crystal grain is imaged on the camera sensor after being transferred by the second side wall surface, the second inclined surface and the sky surface of the transfer and image combination prism, and the imaging is a second image;
the first image and the second image are front end face images and rear end face images of the semiconductor crystal grains acquired by the same image acquisition device at different time points in sequence, and asynchronous imaging detection of two end faces is realized.
The invention realizes the advantages of the device and the method for detecting the asynchronous imaging of the two end faces of the semiconductor crystal grain:
1) The novel device for the asynchronous imaging detection of the two end surfaces of the crystal grain can realize the asynchronous imaging detection of the two end surfaces of the crystal grain in the moving direction by using a group of two right-angle rotating image prisms (namely a first right-angle rotating image prism and a second right-angle rotating image prism) or a rotating image and image combination prism, thereby simplifying the structure of the system, reducing the manufacturing cost of the system, being beneficial to improving the reliability of the system, and in addition, reducing at least two transmission surfaces and one total reflection surface on the light path, thereby reducing the superposition error generated by the processing error of a plurality of prisms.
2) The preposed image transfer system (two right-angle image transfer prisms or an image transfer and image combination combined prism) used by the detection device is assembled above the glass turntable and the crystal to be detected, does not need to be in contact with the surface of the crystal grain to be detected, and can realize the dynamic detection of two end surfaces and/or two side surfaces of the crystal grain to be detected.
Drawings
FIG. 1 is a schematic structural diagram of a first embodiment of the apparatus of the present invention;
FIG. 2 is a partial view of FIG. 1;
FIG. 3 is a schematic structural diagram of a second embodiment of the apparatus of the present invention;
FIG. 4 is a partial view of FIG. 3;
FIG. 5 is a schematic structural diagram of one embodiment of the apparatus of the present invention;
FIG. 6 is an end image of two end imaging detection devices according to the first embodiment of the present application;
fig. 7 is an end face image experimentally acquired by two end face imaging detection devices according to the second embodiment of the present application.
Detailed Description
The present application will be described in detail below with reference to the accompanying drawings in conjunction with embodiments.
The invention realizes the first embodiment of the asynchronous imaging detection device of two end faces of the semiconductor crystal grain, as shown in fig. 1 and 2, a camera 1, a telecentric imaging lens 2, two groups of symmetrically arranged right-angle relay prisms 3, a semiconductor crystal grain 4 and a glass carrying turntable 5 are sequentially arranged in the light path direction of an optical device, and the two groups of symmetrically arranged right-angle relay prisms are positioned on the optical axis A of the telecentric imaging lens;
the two groups of symmetrically arranged right-angle image rotating prisms 3 comprise a first right-angle image rotating prism 3a and a second right-angle image rotating prism 3b, the first right-angle image rotating prism and the second right-angle image rotating prism are symmetrical about a first symmetrical central plane X, the first symmetrical central plane is parallel to two end surfaces (4 a and 4 b) of a semiconductor crystal grain to be detected and penetrates through an optical axis A of the telecentric imaging lens, the paper surface in the figures 1 and 2 is a Y surface of a coordinate axis, the upper surface of the glass carrying turntable 5 is a Z surface, and the first symmetrical central plane X is the optical axis A passing through the telecentric imaging lens and is vertical to the Y surface;
under the condition that the first right-angle image rotating prism and the second right-angle image rotating prism do not rotate, a first right-angle surface 301 of the first right-angle image rotating prism and the second right-angle image rotating prism is parallel to an optical axis A of the telecentric imaging lens, a second right-angle surface 302 of the first right-angle image rotating prism and the second right-angle image rotating prism is perpendicular to the optical axis of the telecentric imaging lens and close to the telecentric imaging lens, inclined surfaces 303 of the first right-angle image rotating prism and the second right-angle image rotating prism are close to the optical axis of the telecentric imaging lens and form a 45-degree included angle with the telecentric imaging lens, the inclined surfaces 303 of the first right-angle image rotating prism and the second right-angle image rotating prism are total reflection surfaces, and the first right-angle surface 301 and the second right-angle surface 302 of the first right-angle image rotating prism and the second right-angle image rotating prism are transmission surfaces;
when the first right-angle relay prism rotates counterclockwise by an orientation angle theta with a right-angle end point as a center of a circle and the second right-angle relay prism rotates clockwise by an orientation angle theta with a right-angle end point as a center of a circle, the right-angle end point is a cross line of two right-angle surfaces of the right-angle relay prism in the figure, and the right-angle relay prism is rotated by theta =1-45 degrees, preferably theta =1-5 degrees with the cross line as an axis.
The right-angle image rotating prism is rotated to enable the inclined planes of the first right-angle image rotating prism and the second right-angle image rotating prism to form an included angle of 45-theta degrees with the optical axis of the telecentric imaging lens, the first right-angle surfaces of the first right-angle image rotating prism and the second right-angle image rotating prism form an included angle of theta with the optical axis of the telecentric imaging lens, and the second right-angle surfaces of the first right-angle image rotating prism and the second right-angle image rotating prism form an included angle of 90+ theta with the optical axis of the telecentric imaging lens.
Furthermore, in order to design reasonably, the distance d between the lower ends of the first right-angle rotating image prism and the second right-angle rotating image prism and the semiconductor crystal grain top surface is =0.5-2.0mm;
the working method (or called optical path direction) of the device for realizing the asynchronous imaging detection of the two end surfaces of the semiconductor crystal grain in the embodiment of the invention is as follows:
when the semiconductor crystal grain is positioned at the left side of the detection device, when the distance between the front end surface 4a of the semiconductor crystal grain in the traveling direction and the first right-angle rotating prism is a given working distance WD, the front end surface 4a forms an image on the camera sensor after rotating the image through the first right-angle rotating prism (the image is incident from a first right-angle surface 301, reflected from an inclined surface 303 and emitted from a second right-angle surface 302, and the incident angle of the first right-angle surface 301 forms an included angle delta =2 theta with the surface of the glass loading turntable), and the image is a first image;
when the semiconductor crystal grain is positioned at the right side of the detection device, the distance between the rear end surface 4b of the semiconductor crystal grain in the traveling direction and the second right-angle relay prism is a given working distance WD, the rear end surface 4b is imaged on the camera sensor after being relayed by the second right-angle relay prism, and the imaging is a second image;
the first image and the second image are front end face images and rear end face images of the semiconductor crystal grains acquired by the same image acquisition device at different time points in sequence, and asynchronous imaging detection of two end faces is realized;
the imaging of the front and rear end faces of the semiconductor crystal grain in the advancing direction can be formed in the same picture by laminating and splicing the first image and the second image, namely, the imaging detection of the two end faces of the semiconductor crystal grain can be realized.
The invention realizes the second embodiment of the asynchronous imaging detection device of two end faces of the semiconductor crystal grain, as shown in fig. 3 and 4, a camera 1, a telecentric imaging lens 2, a transfer and image combination prism 6, a semiconductor crystal grain 4 and a glass carrying turntable 5 are sequentially arranged in the optical path direction of the optical device, and the transfer and image combination prism is positioned on the optical axis A of the telecentric imaging lens;
the rotating image and image combination combined prism 6 is in a cuboid shape, a top surface 601 of the rotating image and image combination combined prism is perpendicular to an optical axis A of the telecentric imaging lens, two opposite side wall surfaces 602 of the rotating image and image combination combined prism are parallel to the optical axis A of the telecentric imaging lens, and the two opposite side wall surfaces 602 are imaging input surfaces; a groove 603 with an inverted V-shaped cross section is arranged in the lower part of the combined image transfer and combination prism, two inclined planes 604 of the groove are total reflection planes, the zenith of the combined image transfer and combination prism is an imaging output plane, two opposite side wall planes 602 and two inclined planes 604 of the groove are symmetrical about a second symmetrical central plane X1, and the second symmetrical central plane is parallel to two end planes (4 a and 4 b) of the semiconductor crystal grain to be detected and passes through an optical axis A of the telecentric imaging lens;
in fig. 3 and 4, the paper surface is a Y surface of a coordinate axis, the upper surface of the glass carrier turntable 5 is a Z surface, and the first symmetric central plane X1 is an optical axis a of the telecentric imaging lens and is perpendicular to the Y surface;
an included angle epsilon is formed between the two inclined planes 604 of the groove and the surface of the glass carrying turntable, 90-epsilon is formed between the two inclined planes of the groove and the optical axis of the telecentric imaging lens, epsilon =1-90 degrees, and epsilon =45 degrees + theta or 45 degrees-theta is adopted as an embodiment; the incident light beams on the front end face 4a and the rear end face 4b of the semiconductor crystal grain 4 and the surface of the glass loading turntable form delta = arcsin (n × sin (2 ∈ -90)), and n is the refractive index of the combined relay and image combining prism.
Furthermore, in order to design reasonably, the distance d between the lower end surface of the rotating image and image combination combined prism and the semiconductor crystal grain top surface is =0.5-2.0mm; fig. 5 lists δ =1.92mm, and the included angle of the two slopes 604 is 82 degrees.
The working method (or called optical path direction) of the device for realizing asynchronous imaging detection of the two end faces of the semiconductor crystal grain in the embodiment of the invention is as follows:
when the semiconductor crystal grain is positioned at the left side of the detection device, when the distance from the front end face 4a of the semiconductor crystal grain in the traveling direction to the first side wall surface of the transfer and image combination prism is a given working distance WD, the front end face of the semiconductor crystal grain is subjected to image transfer through the first side wall surface, the first inclined surface and the sky surface of the transfer and image combination prism and then is imaged on the camera sensor, and the imaging is a first image;
when the semiconductor crystal grain is positioned at the right side of the detection device, when the distance from the rear end face 4b of the semiconductor crystal grain in the traveling direction to the second side wall face of the combined image-rotating and image-combining prism is a given working distance WD, the rear end face of the semiconductor crystal grain is subjected to image rotation through the second side wall face, the second inclined face and the zenith face of the combined image-rotating and image-combining prism and then imaged on the camera sensor, and the image is a second image;
the first image and the second image are front end face images and rear end face images of the semiconductor crystal grains acquired by the same image acquisition device at different time points in sequence, and asynchronous imaging detection of two end faces is realized;
the imaging of the front and rear end faces of the semiconductor crystal grain in the advancing direction can be formed in the same picture by laminating and splicing the first image and the second image, namely, the imaging detection of the two end faces of the semiconductor crystal grain can be realized.
The second embodiment of this application, adopt the image rotation and close the right angle image rotation prism 3 that the image combination prism 6 set up in two sets of symmetries, the optical system structure is more stable, also more control, and more be fit for the use of putting into on the crystalline grain sieve separator, all place telecentric imaging lens 2 and image rotation and close the image combination prism 6 in the top of carrying the thing carousel, can not contact with year thing glass carousel, the optical axis of formation of image optical device also satisfies and 4 terminal surface normals of semiconductor crystalline grain that awaits measuring become a small angle, thereby accomplish crystalline grain both ends face formation of image.
In the two embodiments, the semiconductor crystal grain 4 is in a cuboid shape or a square shape and comprises a front end face 4a, a rear end face 4b, two side faces, a top face and a bottom face, and the application can detect the front end face 4a, the rear end face 4b or the two side faces of the semiconductor crystal grain; the semiconductor die 4 is supported by and rotated with a glass carrier disk 5, the glass carrier disk 5 can be driven by a motor or the like to rotate continuously or intermittently, and the camera 1 can be a CMOS camera or a CCD camera or the like.
The semiconductor crystal grain is supported by the glass loading turntable and rotates along with the glass loading turntable, and moves in the direction which is under the first right-angle rotating image prism and the second right-angle rotating image prism and is vertical to the optical axis.
The right-angle surfaces, the imaging input surface and the imaging output surface are light-permeable, and the wall surfaces of the inclined surfaces or the grooves can realize the total reflection function by attaching a total reflection film or plating a total reflection film layer and the like.
The upper and lower positions of the first right-angle rotating image prism and the second right-angle rotating image prism can be adjusted so as to debug and realize that the two end surfaces of the semiconductor crystal grain can acquire and obtain images on the camera sensor.
The distance d =0.5-1.0mm between the lower ends of the first right-angle rotating image prism and the second right-angle rotating image prism and the semiconductor crystal grain, and in the measuring station, the distance WD =30-100mm between the first right-angle rotating image prism and the semiconductor crystal grain is one embodiment.
The method is characterized in that experimental equipment is used for verifying the image acquisition effect of two end faces of the semiconductor crystal grain, in the experiment, a telecentric imaging lens 2 in the experimental device adopts a Dehong telecentric lens WTL10-1.5X20 which is 1.5 times, and the telecentric imaging lens has the total optical length: 256.0mm (object plane to image plane distance), front working distance: 112.9mm, rear working distance: 25.4mm (rear intercept), lens barrel length: 143.1mm (distance from the first surface of the lens to the image plane), image field: 7.5mm; the camera in the experimental device is an MV-CA013-20GM Haokawa 130 ten thousand industrial camera, the target surface size of the camera is 1/3', the pixel size is 3.75 mu m, the pixel size of the sensing surface array is 1280 multiplied by 960, 30 frames/second and gigabit net ports; the illuminator uses an XZ-20WLED LED lamp light illuminator, the AC-INPUT is 100V to 240V 50/60HZ, the color temperature is 6500K, and the output power is 20W.
After image acquisition, the computer camera acquisition software MVS is used to start acquisition and imaging, the obtained image of the first embodiment is shown in fig. 6, the image of the second embodiment is shown in fig. 7, and the imaging effects of the two end faces of the semiconductor crystal grain displayed by the images in fig. 6 and 7 are completely no less than that of the complex structure adopted in the background technology, so the method has the following advantages:
1) The novel device for asynchronously imaging and detecting two end faces of the crystal grain can realize the asynchronous imaging and detecting of the two end faces of the crystal grain in the moving direction by using a group of two right-angle rotating image prisms (namely a first right-angle rotating image prism and a second right-angle rotating image prism) or a rotating image and image combination prism, simplifies the structure of a system, reduces the manufacturing cost of the system, is beneficial to improving the working reliability of the system, and in addition, at least two transmission faces and one total reflection face are reduced on a light path, thereby reducing the superposition error generated by the processing error of a plurality of prisms.
2) The preposed image transfer system (two right-angle image transfer prisms or an image transfer and image combination combined prism) used by the detection device is assembled above the glass turntable and the crystal to be detected, does not need to be in contact with the surface of the crystal grain to be detected, and can realize the dynamic detection of two end surfaces and/or two side surfaces of the crystal grain to be detected.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention and not to limit it; although the present invention has been described in detail with reference to preferred embodiments, those skilled in the art will understand that: modifications to the specific embodiments of the invention or equivalent substitutions for parts of the technical features may be made; without departing from the spirit of the invention, it is intended to cover all modifications within the scope of the invention as claimed.
Claims (4)
1. A device for realizing asynchronous imaging detection of two end faces of a semiconductor crystal grain is characterized in that: the optical device is characterized in that a camera, a telecentric imaging lens, two groups of symmetrically arranged right-angle rotating prisms, a semiconductor crystal grain and a glass carrying turntable are sequentially arranged in the optical path direction of the optical device, and the two groups of symmetrically arranged right-angle rotating prisms are positioned on the optical axis of the telecentric imaging lens;
the two groups of symmetrically arranged right-angle image rotating prisms comprise a first right-angle image rotating prism and a second right-angle image rotating prism, the first right-angle image rotating prism and the second right-angle image rotating prism are symmetrical about a first symmetrical central plane, and the first symmetrical central plane is parallel to two end faces of the semiconductor crystal grain to be detected and penetrates through an optical axis of the telecentric imaging lens;
under the condition that the first right-angle image rotating prism and the second right-angle image rotating prism do not rotate, first right-angle surfaces of the first right-angle image rotating prism and the second right-angle image rotating prism are parallel to an optical axis of the telecentric imaging lens, second right-angle surfaces of the first right-angle image rotating prism and the second right-angle image rotating prism are perpendicular to the optical axis of the telecentric imaging lens and are close to the telecentric imaging lens, inclined surfaces of the first right-angle image rotating prism and the second right-angle image rotating prism are close to the optical axis of the telecentric imaging lens and form a 45-degree included angle with the telecentric imaging lens, the inclined surfaces of the first right-angle image rotating prism and the second right-angle image rotating prism are total reflection surfaces, and the first right-angle surfaces and the second right-angle surfaces of the first right-angle image rotating prism and the second right-angle image rotating prism are transmission surfaces;
when the first right-angle image rotating prism rotates anticlockwise for an orientation angle theta by taking a right-angle end point as a circle center and the second right-angle image rotating prism rotates clockwise for an orientation angle theta by taking the right-angle end point as the circle center, the theta =1-45 degrees, so that the inclined planes of the first right-angle image rotating prism and the second right-angle image rotating prism form an included angle of 45-theta with the optical axis of the telecentric imaging lens, the first right-angle surfaces of the first right-angle image rotating prism and the second right-angle image rotating prism form an included angle of theta with the optical axis of the telecentric imaging lens, and the second right-angle surfaces of the first right-angle image rotating prism and the second right-angle image rotating prism form an included angle of 90+ theta with the optical axis of the telecentric imaging lens.
2. The apparatus for realizing asynchronous imaging of two end faces of a semiconductor die as defined in claim 1, wherein: the distance d between the lower ends of the first right-angle rotating image prism and the second right-angle rotating image prism and the semiconductor crystal grain skyward is =0.5-2.0mm.
3. The apparatus according to claim 1 or 2, wherein the apparatus for realizing asynchronous imaging of two end faces of the semiconductor die comprises: the θ =1-5 degrees.
4. A method for realizing asynchronous imaging detection of two end faces of a semiconductor crystal grain is characterized by comprising the following steps: the optical device is characterized in that a camera, a telecentric imaging lens, two groups of symmetrically arranged right-angle rotating prisms, a semiconductor crystal grain and a glass carrying turntable are sequentially arranged in the optical path direction of the optical device, and the two groups of symmetrically arranged right-angle rotating prisms are positioned on the optical axis of the telecentric imaging lens;
the two groups of symmetrically arranged right-angle image rotating prisms comprise a first right-angle image rotating prism and a second right-angle image rotating prism, the first right-angle image rotating prism and the second right-angle image rotating prism are symmetrical about a first symmetrical central plane, and the first symmetrical central plane is parallel to two end faces of the semiconductor crystal grain to be detected and penetrates through an optical axis of the telecentric imaging lens;
under the condition that the first right-angle image rotating prism and the second right-angle image rotating prism do not rotate, first right-angle surfaces of the first right-angle image rotating prism and the second right-angle image rotating prism are parallel to an optical axis of the telecentric imaging lens, second right-angle surfaces of the first right-angle image rotating prism and the second right-angle image rotating prism are perpendicular to the optical axis of the telecentric imaging lens and are close to the telecentric imaging lens, inclined surfaces of the first right-angle image rotating prism and the second right-angle image rotating prism are close to the optical axis of the telecentric imaging lens and form a 45-degree included angle with the telecentric imaging lens, the inclined surfaces of the first right-angle image rotating prism and the second right-angle image rotating prism are total reflection surfaces, and the first right-angle surfaces and the second right-angle surfaces of the first right-angle image rotating prism and the second right-angle image rotating prism are transmission surfaces;
when the first right-angle image rotating prism rotates anticlockwise for an orientation angle theta by taking a right-angle end point as a circle center and the second right-angle image rotating prism rotates clockwise for an orientation angle theta by taking the right-angle end point as the circle center, the theta =1-45 degrees, so that the inclined planes of the first right-angle image rotating prism and the second right-angle image rotating prism form an included angle of 45-theta with the optical axis of the telecentric imaging lens, the first right-angle surfaces of the first right-angle image rotating prism and the second right-angle image rotating prism form an included angle of theta with the optical axis of the telecentric imaging lens, and the second right-angle surfaces of the first right-angle image rotating prism and the second right-angle image rotating prism form an included angle of 90+ theta with the optical axis of the telecentric imaging lens;
when the semiconductor crystal grain is positioned at the left side of the detection device, when the distance between the front end surface of the semiconductor crystal grain in the traveling direction and the first right-angle rotating image prism is a given working distance WD, the front end surface is imaged on the camera sensor after being rotated by the first right-angle rotating image prism, and the image is a first image;
when the semiconductor crystal grain is positioned at the right side of the detection device, the distance between the rear end surface of the semiconductor crystal grain in the traveling direction and the second right-angle relay prism is a given working distance WD, the rear end surface is imaged on the camera sensor after being relayed by the second right-angle relay prism, and the imaging is a second image;
the first image and the second image are front end face images and rear end face images of the semiconductor crystal grains acquired by the same image acquisition device at different time points in sequence, and asynchronous imaging detection of the two end faces is realized.
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