CN110849888A - Illumination compensation device and method for simultaneously detecting defects on two sides of semiconductor crystal grain - Google Patents
Illumination compensation device and method for simultaneously detecting defects on two sides of semiconductor crystal grain Download PDFInfo
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- CN110849888A CN110849888A CN201911315115.9A CN201911315115A CN110849888A CN 110849888 A CN110849888 A CN 110849888A CN 201911315115 A CN201911315115 A CN 201911315115A CN 110849888 A CN110849888 A CN 110849888A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
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- G02B17/0856—Catadioptric systems comprising a refractive element with a reflective surface, the reflection taking place inside the element, e.g. Mangin mirrors
- G02B17/086—Catadioptric systems comprising a refractive element with a reflective surface, the reflection taking place inside the element, e.g. Mangin mirrors wherein the system is made of a single block of optical material, e.g. solid catadioptric systems
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- G—PHYSICS
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
- G01N2021/8841—Illumination and detection on two sides of object
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Abstract
The invention relates to an illumination compensation device for simultaneously detecting defects on two sides of a semiconductor crystal grain, which comprises an optical detection device, wherein a right-angle image rotating prism is arranged on an optical path of the optical detection device, and the right-angle illumination compensation prism and a compensation illumination light source are sequentially arranged below the right-angle edge of the bottom side of the semiconductor crystal grain on the right-angle image rotating prism. The structure is simple, the light beam emitted from the compensation illumination light source is incident to the right-angle edge of the right-angle relay prism through the right-angle illumination compensation prism, the light beam is incident on the inclined plane of the right-angle relay prism after being refracted and does not meet the total reflection condition, but is emitted from the inclined plane and penetrates through the transparent glass objective table to illuminate the bottom surface of the semiconductor crystal grain, and illumination compensation for the bottom surface of the semiconductor crystal grain is realized.
Description
Technical Field
The invention relates to an illumination compensation device and method for simultaneously detecting defects on two sides of a semiconductor crystal grain, belonging to the field of optical detection and machine vision.
Background
The conventional machine vision optical detection device mainly comprises a camera, an imaging lens, an illumination light source, image processing algorithm software, electrical control, a mechanical structure, an object to be detected (such as a semiconductor crystal grain) and the like. The object is illuminated by a light source, the object obtains an image of the object on the CCD detector surface through an optical imaging lens, the image is transmitted to a computer through an image acquisition card and an A-D conversion module, finally, required image information is obtained through a digital image processing technology, and the size, the shape and the color are distinguished and measured according to information such as pixel distribution, brightness, color and the like, so that the field equipment operation is controlled. If two faces of a single object are to be detected simultaneously, the current universal detection method is that one camera occupies one station to detect one face, and if two faces or more than two faces are to be detected simultaneously, a plurality of cameras need to occupy a plurality of stations to detect, so that the mechanism installation space is large, a plurality of sets of mechanism installation modules and a plurality of sets of circuit modules are needed simultaneously, the installation complexity is increased, and the system reliability is reduced. The traditional machine vision optical detection device based on the single-lens single-face detection technology has economic and technical limitations such as detection efficiency, cost performance, complex structure and the like. In addition, in the on-line detection of the object to be detected, the variation of definition of different objects on the CCD receiving plane due to the variation of the image positions of the objects in the direction of the optical axis of the imaging lens, or due to the tolerance of the thickness of the object to be detected itself, is caused. This problem is usually solved by using an object-side telecentric imaging lens with a certain depth of field.
To address the above shortcomings, the prior art proposes optical devices for simultaneous inspection of both sides of a semiconductor die, such as prior art patents 2019101574716 and 2019102070162.
However, the above optical device has the problem of unequal illumination for double-sided detection, that is, although the two optical paths of the double-sided detection system can obtain aplanatic imaging of the object, the illumination intensities when the two light beams with equal intensity reach the surface to be detected of the crystal grain will be different due to different numbers of reflection and refraction of the two optical paths through different numbers of optical elements, thereby causing difficulty in image processing for simultaneous detection of double-sided defects.
The optical device aims to solve the problem of unequal illuminance of double-sided detection in the existing optical device.
Disclosure of Invention
In view of the defects of the prior art, the technical problem to be solved by the present invention is to provide an illumination compensation apparatus and method for simultaneously detecting defects on both sides of a semiconductor die, which is not only simple in structure, but also convenient and efficient.
In order to solve the technical problems, the technical scheme of the invention is as follows: the illumination compensation device comprises an optical detection device, wherein a right-angle image rotating prism is arranged on an optical path of the optical detection device, and a right-angle illumination compensation prism and a compensation illumination light source are sequentially arranged below the right-angle edge side of the bottom surface side of the semiconductor crystal grain.
Preferably, the right angle illumination compensation prism slope is parallel to the right angle edge of the right angle relay prism on the bottom side of the semiconductor die.
Preferably, a rotating shaft for rotating and adjusting the angle of the right-angle illumination compensation prism is arranged at one vertex of the right-angle illumination compensation prism.
Preferably, a rotating shaft for compensating the rotation and angle adjustment of the illumination light source is arranged in the middle of the compensation illumination light source.
Preferably, the optical inspection apparatus is an apparatus for simultaneously optically inspecting both front and back surfaces of a semiconductor die, and includes: a camera containing a sensor CCD or CMOS, a telecentric imaging lens, an external annular illumination light source, a semiconductor crystal grain to be detected, a transparent glass objective table and a right-angle image rotating prism are sequentially arranged from top to bottom in the direction of a vertical light path; the camera and the telecentric imaging lens face downwards and are arranged above the transparent glass objective table; the inclined plane of the right-angle relay prism faces the transparent glass objective table and is parallel to the transparent glass objective table, and the right-angle relay prism is arranged below the transparent glass objective table; the right-angle rotating image prism, the telecentric imaging lens and the camera are coaxial optical systems.
Preferably, the semiconductor die is located on the left side of the right-angle relay prism, and the right-angle illumination compensation prism and the compensation illumination light source are located on the lower left side of the right-angle relay prism.
Preferably, the optical inspection apparatus is an apparatus for simultaneously optically inspecting two adjacent surfaces of a semiconductor die, and includes: set up in proper order in the horizontal direction: the device comprises a horizontal transparent glass objective table, a beam splitter and an illumination light source with an angle of 45 degrees, a camera and a telecentric imaging lens above the horizontal transparent glass objective table, and a right-angle rotating image prism below the horizontal transparent glass objective table; the camera and the telecentric imaging lens are arranged above the beam splitter downwards; the right-angle rotating image prism is arranged below the transparent glass objective table and the beam splitter, and the inclined plane is parallel to the transparent glass objective table and faces the transparent glass objective table.
Preferably, the semiconductor die is located on the left side of the right-angle relay prism, and the right-angle illumination compensation prism and the compensation illumination light source are located on the lower left side of the right-angle relay prism.
Preferably, the optical inspection apparatus is an apparatus for simultaneously inspecting the top surface and the bottom surface of the semiconductor die based on the relay lens, and includes: the device comprises a transparent glass object stage, two small right-angle image rotating prisms, an illumination light source, a telecentric imaging lens and a camera, wherein the transparent glass object stage is used for bearing semiconductor crystal grains to be detected; the other right-angle surface of the two small right-angle relay prisms faces the transparent glass object stage and is parallel to the transparent glass object stage; an image rotating lens is arranged between the opposite right-angle surfaces of the two small right-angle image rotating prisms, and the image rotating lens is a convex lens; the two small right-angle relay prisms form a large right-angle relay prism, the semiconductor crystal grain is positioned above the right-angle side of the left small right-angle relay prism of the two small right-angle relay prisms, and the right-angle illumination compensation prism and the compensation illumination light source are positioned at the left lower part of the large right-angle relay prism.
A compensation method of an illumination compensation device for simultaneously detecting defects on two sides of a semiconductor crystal grain is carried out according to the following steps: the light beam emitted from the compensating illumination light source is incident on the right-angle edge of the right-angle relay prism through the right-angle illumination compensating prism, the light beam is reflected and then incident on the inclined surface of the right-angle relay prism, which does not meet the total reflection condition, but is emitted from the inclined surface and penetrates through the transparent glass objective table to illuminate the bottom surface of the semiconductor crystal grain, so that the illumination compensation on the bottom surface of the semiconductor crystal grain is realized.
Compared with the prior art, the invention has the following beneficial effects: the structure is simple, the light beam emitted from the compensation illumination light source is incident to the right-angle edge of the right-angle relay prism through the right-angle illumination compensation prism, the light beam is incident on the inclined plane of the right-angle relay prism after being refracted and does not meet the total reflection condition, but is emitted from the inclined plane and penetrates through the transparent glass objective table to illuminate the bottom surface of the semiconductor crystal grain, the illumination compensation of the bottom surface of the semiconductor crystal grain is realized, and the purpose of equal-illumination is achieved.
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
Drawings
FIG. 1 is a schematic configuration diagram of example 1 of the present invention.
FIG. 2 is a schematic configuration diagram of example 1A of the present invention.
FIG. 3 is a schematic structural view of embodiment 1B of the present invention.
FIG. 4 is a schematic configuration diagram of example 2 of the present invention.
FIG. 5 is a schematic configuration diagram of example 3 of the present invention.
Detailed Description
In order to make the aforementioned and other features and advantages of the invention more comprehensible, embodiments accompanied with figures are described in detail below.
All embodiments of the invention are shown in FIGS. 1-5:
an illumination compensation device for simultaneously detecting double-sided defects of a semiconductor crystal grain comprises an optical detection device, wherein a right-angle image rotating prism 1 is arranged on an optical path of the optical detection device, and a right-angle illumination compensation prism 3 and a compensation illumination light source 4 are sequentially arranged below the right-angle edge side of the bottom surface side of a semiconductor crystal grain 2. In the existing optical device for simultaneously detecting defects on two sides (bottom and top, bottom and side) of a semiconductor crystal grain, the conventionally used illumination light source comprises an annular illumination light source, an external coaxial illumination light source or an internal coaxial illumination light source and the like. A common problem in these inspection devices is that the illumination intensity at the bottom of the die is 10-18% weaker than that at the top (or side). The main sources of this illumination difference are the reflection losses of the two surfaces of the transparent glass stage and the absorption of its glass material, and the two reflection losses of the right-angle relay prism slope. In order to obtain equal-illuminance illumination of both sides, it is generally necessary to perform appropriate illumination compensation on the bottom surface of the semiconductor die.
In the embodiment of the invention, the inclined surface of the right-angle illumination compensation prism is parallel to the right-angle edge of the right-angle image transfer prism on the bottom surface side of the semiconductor crystal grain.
As shown in fig. 1, in embodiment 1 of the present invention, an optical inspection apparatus for optically inspecting front and back surfaces of a semiconductor die simultaneously includes: a camera 5 containing a sensor CCD or CMOS, a telecentric imaging lens 6, an external annular illumination light source 7, a semiconductor crystal grain to be detected, a transparent glass objective table 8 and a right-angle rotating prism are sequentially arranged from top to bottom in the direction of a vertical light path; the camera and the telecentric imaging lens face downwards and are arranged above the transparent glass objective table; the inclined plane of the right-angle relay prism faces the transparent glass objective table and is parallel to the transparent glass objective table, and the right-angle relay prism is arranged below the transparent glass objective table; the right-angle rotating image prism, the telecentric imaging lens and the camera are coaxial optical systems.
In embodiment 1 of the present invention, a semiconductor die is located on the left side of a right-angle relay prism, one main illumination beam emitted from an illumination light source directly illuminates the top surface of the semiconductor die, and the other main illumination beam is firstly turned by secondary reflection of the right-angle relay prism and then illuminates the bottom surface of a die to be measured located on a transparent glass stage. Obviously, the illumination intensity of the two illumination beams reaching the semiconductor crystal grain top surface and the bottom surface after different times of reflection and refraction is different, and the illumination intensity of the bottom surface is usually 10-18% weaker than that of the top surface. Therefore, the right-angle illumination compensation prism and the compensation illumination light source are positioned at the left lower part of the right-angle relay prism to perform illumination compensation on the bottom surface of the semiconductor crystal grain, one acute angle of the right-angle illumination compensation prism is about 30 degrees, and one right-angle side of the right-angle illumination compensation prism forms an angle of 15 degrees with the horizontal direction; the angle of the right-angle illumination compensation prism is selected in such a way that a light beam emitted from a compensation illumination light source is incident on a right-angle side of the right-angle relay prism, is refracted and then is incident on an inclined plane of the right-angle relay prism, does not meet the total reflection condition, but is emitted from the inclined plane and penetrates through the bottom surface of the transparent glass objective table illumination crystal grain.
As shown in fig. 2, in embodiment 1A of the present invention, in order to optimize the illumination on the top and bottom surfaces of the die, a rotation shaft 9 for rotating the right-angle illumination compensation prism by an angle is disposed at one of the vertices of the right-angle illumination compensation prism, so as to change the incident angle of the illumination beam on the bottom surface of the die to obtain the best scattering compensation illumination effect on the bottom surface of the die.
As shown in fig. 3, in embodiment 1B of the present invention, in order to optimize the illumination on the top and bottom surfaces of the die, the middle portion of the compensation illumination source is provided with a rotation shaft for adjusting the rotation angle of the compensation illumination source, so as to change the angle of the illumination beam on the bottom surface of the die, thereby obtaining the optimal dispersion compensation illumination effect on the bottom surface of the die.
The embodiment 1A and the embodiment 1B can be configured simultaneously, that is, when in use, the compensation illumination source can be selected to fixedly adjust the right-angle illumination compensation prism, or the right-angle illumination compensation prism can fixedly adjust the compensation illumination source, or the compensation illumination source and the right-angle illumination compensation prism can be adjusted simultaneously, so as to obtain the best scattering compensation illumination effect of the bottom surface of the crystal grain.
As shown in fig. 4, in embodiment 2 of the present invention, an optical inspection apparatus for optically inspecting two adjacent surfaces of a semiconductor die simultaneously includes: set up in proper order in the horizontal direction: the device comprises a horizontal transparent glass objective table, a beam splitter 10 with an angle of 45 degrees, an illumination light source, a camera and a telecentric imaging lens above the horizontal transparent glass objective table, and a right-angle rotating image prism below the horizontal transparent glass objective table; the camera and the telecentric imaging lens are arranged above the beam splitter downwards; the right-angle rotating image prism is arranged below the transparent glass objective table and the beam splitter, and the inclined plane is parallel to the transparent glass objective table and faces the transparent glass objective table.
In embodiment 2 of the present invention, the semiconductor crystal grain is located on the left side of the right-angle relay prism, and the right-angle illumination compensation prism and the compensation illumination light source are located on the lower left side of the right-angle relay prism; a rotating shaft (not shown in the figure) for rotating and adjusting the angle of the right-angle illumination compensation prism can be arranged at one vertex of the right-angle illumination compensation prism; the middle part of the compensation illumination source can also be provided with a rotating shaft (not shown in the figure) for compensating the rotation and the angle adjustment of the illumination source.
As shown in fig. 5, in embodiment 3 of the present invention, an optical inspection apparatus for simultaneously inspecting the top surface and the bottom surface of a semiconductor die based on an image transfer lens includes: the device comprises a transparent glass object stage for bearing semiconductor crystal grains to be detected, two small right-angle image rotating prisms 11 arranged on the first side of the transparent glass object stage in a back-to-back manner, an illumination light source, a telecentric imaging lens and a camera, wherein the two small right-angle image rotating prisms are arranged on the second side of the transparent glass object stage; the other right-angle surface of the two small right-angle relay prisms faces the transparent glass object stage and is parallel to the transparent glass object stage; an image rotating lens 12 is arranged between the opposite right-angle surfaces of the two small right-angle image rotating prisms, and the image rotating lens is a convex lens; the two small right-angle relay prisms form a large right-angle relay prism, the semiconductor crystal grain is positioned above the right-angle side of the small right-angle relay prism on the left side of the two small right-angle relay prisms, and the right-angle illumination compensation prism and the compensation illumination light source are positioned on the left lower side of the large right-angle relay prism; a rotating shaft (not shown in the figure) for rotating and adjusting the angle of the right-angle illumination compensation prism can be arranged at one vertex of the right-angle illumination compensation prism; the middle part of the compensation illumination source can also be provided with a rotating shaft (not shown in the figure) for compensating the rotation and the angle adjustment of the illumination source.
In embodiment 3 of the present invention, the combined relay optical system formed by the two small right-angle relay prisms and the relay lens can realize the basic aplanatism imaging of the top surface and the bottom surface, and reduce the requirement of the detection system for the large depth of field of the imaging lens, even if the depth of field is less than or equal to the thickness of the crystal grain. The bottom surface imaging of the semiconductor crystal grain is positioned at the side of the transparent glass objective table and close to the horizontal position of the bottom surface of the semiconductor crystal grain, the bottom surface imaging position K of the semiconductor crystal grain can be adjusted by adjusting the distance between the relay lens and the right-angle surfaces of the two small right-angle relay prisms, the bottom surface imaging of the semiconductor crystal grain is positioned at the side of the transparent glass objective table and close to the horizontal position of the bottom surface of the semiconductor crystal grain, the requirement of a detection system on the large depth of field of the imaging lens can be reduced, the cost of the imaging lens is reduced, and the shooting difficulty and the image processing difficulty are also reduced. When the bottom surface of the semiconductor crystal grain is positioned at the focus position twice as far as the object space of the combined relay imaging optical system, a real image of the bottom surface of the semiconductor crystal grain is obtained at the focus position twice as far as the image space, and the transverse magnification is 1 time; the secondary images of the top surface and the bottom surface of the semiconductor crystal grain respectively pass through a telecentric imaging lens to finally form real images of the top surface and the bottom surface in the left half area and the right half area of the camera sensor.
A compensation method of an illumination compensation device for simultaneously detecting defects on two sides of a semiconductor crystal grain is carried out according to the following steps: the light beam emitted from the compensating illumination light source is incident on the right-angle edge of the right-angle relay prism through the right-angle illumination compensating prism, the light beam is reflected and then incident on the inclined surface of the right-angle relay prism, which does not meet the total reflection condition, but is emitted from the inclined surface and penetrates through the transparent glass objective table to illuminate the bottom surface of the semiconductor crystal grain, so that the illumination compensation on the bottom surface of the semiconductor crystal grain is realized.
The invention can not only compensate the illumination when detecting the semiconductor crystal grain, but also compensate the illumination when detecting the bottom surface of other objects placed on the transparent glass object stage.
The present invention is not limited to the above preferred embodiments, and various other illumination compensation devices and methods for simultaneous detection of defects on both sides of a semiconductor die can be devised by anyone in light of the present invention. All equivalent changes and modifications made according to the claims of the present invention should be covered by the present invention.
Claims (10)
1. An illumination compensation device for simultaneously detecting defects on two sides of a semiconductor crystal grain comprises an optical detection device, wherein a right-angle rotating image prism is arranged on an optical path of the optical detection device, and the illumination compensation device is characterized in that: the right-angle image-rotating prism is sequentially provided with a right-angle illumination compensation prism and a compensation illumination light source below the right-angle edge of the bottom surface side of the semiconductor crystal grain.
2. The illumination compensation apparatus for simultaneous detection of defects on both sides of a semiconductor die as recited in claim 1, wherein: the inclined plane of the right-angle illumination compensation prism is parallel to the right-angle edge of the right-angle image-rotating prism at the bottom side of the semiconductor crystal grain.
3. The illumination compensation apparatus for simultaneous detection of defects on both sides of a semiconductor die as recited in claim 1, wherein: and a rotating shaft for rotating and adjusting the angle of the right-angle illumination compensation prism is arranged on one vertex of the right-angle illumination compensation prism.
4. The illumination compensation apparatus for simultaneous detection of defects on both sides of a semiconductor die as recited in claim 1, wherein: the middle part of the compensation illumination light source is provided with a rotating shaft for compensating the rotation and angle adjustment of the illumination light source.
5. The illumination compensation device for simultaneous detection of defects on both sides of a semiconductor die as recited in any one of claims 1 to 4, wherein: the optical detection device is a device for simultaneously carrying out optical detection on the front surface and the back surface of a semiconductor crystal grain, and comprises: a camera containing a sensor CCD or CMOS, a telecentric imaging lens, an external annular illumination light source, a semiconductor crystal grain to be detected, a transparent glass objective table and a right-angle image rotating prism are sequentially arranged from top to bottom in the direction of a vertical light path; the camera and the telecentric imaging lens face downwards and are arranged above the transparent glass objective table; the inclined plane of the right-angle relay prism faces the transparent glass objective table and is parallel to the transparent glass objective table, and the right-angle relay prism is arranged below the transparent glass objective table; the right-angle rotating image prism, the telecentric imaging lens and the camera are coaxial optical systems.
6. The illumination compensation apparatus for simultaneous detection of defects on both sides of a semiconductor die as recited in claim 5, wherein: the semiconductor crystal grain is positioned at the left side of the right-angle rotating image prism, and the right-angle illumination compensation prism and the compensation illumination light source are positioned at the left lower side of the right-angle rotating image prism.
7. The illumination compensation device for simultaneous detection of defects on both sides of a semiconductor die as recited in any one of claims 1 to 4, wherein: the optical detection device is a device for simultaneously optically detecting two adjacent surfaces of a semiconductor crystal grain, and comprises: set up in proper order in the horizontal direction: the device comprises a horizontal transparent glass objective table, a beam splitter and an illumination light source with an angle of 45 degrees, a camera and a telecentric imaging lens above the horizontal transparent glass objective table, and a right-angle rotating image prism below the horizontal transparent glass objective table; the camera and the telecentric imaging lens are arranged above the beam splitter downwards; the right-angle rotating image prism is arranged below the transparent glass objective table and the beam splitter, and the inclined plane is parallel to the transparent glass objective table and faces the transparent glass objective table.
8. The illumination compensation apparatus for simultaneous detection of defects on both sides of a semiconductor die as recited in claim 7, wherein: the semiconductor crystal grain is positioned at the left side of the right-angle rotating image prism, and the right-angle illumination compensation prism and the compensation illumination light source are positioned at the left lower side of the right-angle rotating image prism.
9. The illumination compensation device for simultaneous detection of defects on both sides of a semiconductor die as recited in any one of claims 1 to 4, wherein: the optical detection device is a device for realizing the simultaneous detection of the top surface and the bottom surface of the semiconductor crystal grain based on the image transfer lens, and comprises: the device comprises a transparent glass object stage, two small right-angle image rotating prisms, an illumination light source, a telecentric imaging lens and a camera, wherein the transparent glass object stage is used for bearing semiconductor crystal grains to be detected; the other right-angle surface of the two small right-angle relay prisms faces the transparent glass object stage and is parallel to the transparent glass object stage; an image rotating lens is arranged between the opposite right-angle surfaces of the two small right-angle image rotating prisms, and the image rotating lens is a convex lens; the two small right-angle relay prisms form a large right-angle relay prism, the semiconductor crystal grain is positioned above the right-angle side of the left small right-angle relay prism of the two small right-angle relay prisms, and the right-angle illumination compensation prism and the compensation illumination light source are positioned at the left lower part of the large right-angle relay prism.
10. A compensation method of an illumination compensation apparatus for simultaneous detection of defects on both sides of a semiconductor die as defined in any one of claims 1 to 9, comprising the steps of: the light beam emitted from the compensating illumination light source is incident on the right-angle edge of the right-angle relay prism through the right-angle illumination compensating prism, the light beam is reflected and then incident on the inclined surface of the right-angle relay prism, which does not meet the total reflection condition, but is emitted from the inclined surface and penetrates through the transparent glass objective table to illuminate the bottom surface of the semiconductor crystal grain, so that the illumination compensation on the bottom surface of the semiconductor crystal grain is realized.
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| CN114460001A (en) * | 2021-12-24 | 2022-05-10 | 合肥市商巨智能装备有限公司 | Optical system is examined on patrol limit of display panel |
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| CN114460001A (en) * | 2021-12-24 | 2022-05-10 | 合肥市商巨智能装备有限公司 | Optical system is examined on patrol limit of display panel |
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