CN114624245A - Optical device and method for realizing asynchronous aplanatic imaging detection of two end faces and two side faces of semiconductor crystal grain - Google Patents
Optical device and method for realizing asynchronous aplanatic imaging detection of two end faces and two side faces of semiconductor crystal grain Download PDFInfo
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- CN114624245A CN114624245A CN202210514315.2A CN202210514315A CN114624245A CN 114624245 A CN114624245 A CN 114624245A CN 202210514315 A CN202210514315 A CN 202210514315A CN 114624245 A CN114624245 A CN 114624245A
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- G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques
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Abstract
The invention relates to an optical instrument in the semiconductor field, in particular to an optical device and a method for realizing asynchronous aplanatic imaging detection of two end surfaces and two side surfaces of a semiconductor crystal grain, which are characterized in that: the four-side image combination composite prism assembly is positioned on the optical axis of the telecentric imaging lens; the detection device and the detection method simplify the structural complexity of the screening machine system and reduce the cost of the screening machine system.
Description
Technical Field
The invention relates to an optical instrument in the field of semiconductors, in particular to an optical device and method for realizing asynchronous aplanatic imaging detection of two end faces and two side faces of a semiconductor crystal grain.
Background
The detection of the surface defects of the semiconductor refrigerating device crystal grains is a necessary quality control means in the production and manufacturing process of the semiconductor refrigerating device, and various methods for realizing the double-sided aplanatic imaging detection of the semiconductor crystal grains are provided in the prior published patents, but the patent methods (such as patent application numbers 201911369257.3, 202010133044.7, 202010250856.X, 202021124017.5) which are provided so far are only suitable for the imaging detection of two adjacent sides or two opposite sides of the semiconductor crystal grains, and if the detection of four sides of the semiconductor crystal grains needs to be realized, the imaging detection of the four sides of the semiconductor crystal grains can be obtained only by adopting two detection stations and two sets of detection equipment.
The invention content is as follows:
in view of the above problems in the prior art, the present invention provides an optical apparatus and method for implementing aplanatic imaging detection of two end faces and two side faces of a semiconductor die, which simplifies the structural complexity of a screening machine system and reduces the cost of the screening machine system.
The invention discloses an optical device for realizing asynchronous aplanatic imaging detection of two end faces and two side faces of a semiconductor crystal grain, which is characterized in that: a camera, a telecentric imaging lens, a four-side image combination composite prism assembly, four groups of image rotation prism assemblies, semiconductor crystal grains and a glass carrying turntable are sequentially arranged in the optical path direction of the optical device, and the four-side image combination composite prism assembly is positioned on the optical axis of the telecentric imaging lens;
the four groups of relay prism assemblies are respectively a first group of relay prism assemblies, a second group of relay prism assemblies, a third group of relay prism assemblies and a fourth group of relay prism assemblies, wherein the first group of relay prism assemblies and the third group of relay prism assemblies are symmetrical about a first symmetrical central plane, the second group of relay prism assemblies and the fourth group of relay prism assemblies are symmetrical about a second symmetrical central plane, and the intersection line of the first symmetrical central plane and the second symmetrical central plane is coincided with the optical axis;
the first group of image rotation prism components and the third group of image rotation prism components both comprise a first right-angle image rotation prism and a second right-angle image rotation prism which are arranged adjacently up and down, a first right-angle surface of the first right-angle image rotation prism is parallel to an optical axis of the telecentric imaging lens and close to an imaging input surface of the four-surface image combination composite prism component, a second right-angle surface of the first right-angle image rotation prism is perpendicular to the optical axis of the telecentric imaging lens, an inclined surface of the first right-angle image rotation prism is back to the optical axis of the telecentric imaging lens and forms a 45-degree included angle with the optical axis of the telecentric imaging lens, and the inclined surface of the first right-angle image rotation prism is a fully reflecting surface;
the first right-angle surface of the second right-angle image rotating prism is perpendicular to the optical axis of the telecentric imaging lens and close to the second right-angle surface of the first right-angle image rotating prism, the second right-angle surface of the second right-angle image rotating prism is parallel and close to the optical axis of the telecentric imaging lens, the inclined surface of the second right-angle image rotating prism is back to the optical axis of the telecentric imaging lens and forms a 45-degree included angle with the optical axis of the telecentric imaging lens, and the inclined surface of the second right-angle image rotating prism is a fully reflecting surface;
the second group of image-turning prism assemblies and the fourth group of image-turning prism assemblies respectively comprise a third right-angle image-turning prism and a fourth right-angle image-turning prism which are arranged adjacently up and down, a first right-angle surface of the third right-angle image-turning prism is parallel to the optical axis of the telecentric imaging lens and close to the imaging input surface of the four-surface image-combining composite prism assembly, a second right-angle surface of the third right-angle image-turning prism is perpendicular to the optical axis of the telecentric imaging lens, the inclined surface of the third right-angle image-turning prism is back to the optical axis of the telecentric imaging lens and forms a 45-degree included angle with the optical axis of the telecentric imaging lens, and the inclined surface of the third right-angle image-turning prism is a total reflection surface;
the first right-angle surface of the fourth right-angle image-rotating prism is perpendicular to the optical axis of the telecentric imaging lens and close to the second right-angle surface of the third right-angle image-rotating prism, the second right-angle surface of the fourth right-angle image-rotating prism is parallel to and far away from the optical axis of the telecentric imaging lens, the inclined surface of the fourth right-angle image-rotating prism is close to the optical axis of the telecentric imaging lens and forms a 45-degree included angle with the optical axis of the telecentric imaging lens, and the inclined surface of the fourth right-angle image-rotating prism is a total reflection surface;
the four-side image combination composite prism assembly is in a cuboid shape, a groove in a regular tetrahedron shape is arranged in the lower body of the four-side image combination composite prism assembly, the wall surface of the groove is a total reflection surface, four side wall surfaces of the four-side image combination composite prism are imaging input surfaces, and the top surface of the four-side image combination composite prism is an imaging output surface;
the semiconductor crystal grain is supported by the glass loading rotary disc and rotates along with the glass loading rotary disc, and moves in the direction which is under the fourth right-angle rotating image prism and is vertical to the optical axis.
Further, the second right-angle relay prism and the fourth right-angle relay prism rotate by an angle theta, theta =1-45 degrees, and the inclined planes of the second right-angle relay prism and the fourth right-angle relay prism and the optical axis of the telecentric imaging lens form an included angle of 45-theta degrees.
Furthermore, above-mentioned four sides close up like composite prism subassembly and form by 4 inversion prisms amalgamation, the inversion prism cuts the formation by the prism, and the cutting surface passes the lower extreme point of a point on the first edge of prism and two other edges of prism, and the first edge of 4 inversion prisms is pressed close to each other and is formed four sides close up like composite prism subassembly.
Further, the distance d between the lower end of the second right-angle relay prism or the fourth right-angle relay prism and the semiconductor crystal grain top surface is =0.5-1.0mm, and the distance WD between the lower end of the second right-angle relay prism or the fourth right-angle relay prism and the semiconductor crystal grain is =42-65 mm.
Further, θ =1 to 5 degrees.
The invention discloses a method for realizing asynchronous aplanatic imaging detection of two end faces and two side faces of a semiconductor crystal grain, which is characterized by comprising the following steps of: a camera, a telecentric imaging lens, a four-side image combination composite prism assembly, four groups of image rotation prism assemblies, semiconductor crystal grains and a glass carrying turntable are sequentially arranged in the optical path direction of the optical device, and the four-side image combination composite prism assembly is positioned on the optical axis of the telecentric imaging lens;
the four groups of relay prism assemblies are respectively a first group of relay prism assemblies, a second group of relay prism assemblies, a third group of relay prism assemblies and a fourth group of relay prism assemblies, wherein the first group of relay prism assemblies and the third group of relay prism assemblies are symmetrical about a first symmetrical central plane, the second group of relay prism assemblies and the fourth group of relay prism assemblies are symmetrical about a second symmetrical central plane, and the intersection line of the first symmetrical central plane and the second symmetrical central plane is coincided with the optical axis;
the first group of image rotating prism components and the third group of image rotating prism components both comprise a first right-angle image rotating prism and a second right-angle image rotating prism which are arranged adjacently up and down, a first right-angle surface of the first right-angle image rotating prism is parallel to the optical axis of the telecentric imaging lens and close to the imaging input surface of the four-surface image combining composite prism component, a second right-angle surface of the first right-angle image rotating prism is perpendicular to the optical axis of the telecentric imaging lens, the inclined surface of the first right-angle image rotating prism is back to the optical axis of the telecentric imaging lens and forms a 45-degree included angle with the optical axis of the telecentric imaging lens, and the inclined surface of the first right-angle image rotating prism is a total reflection surface;
the first right-angle surface of the second right-angle image rotating prism is perpendicular to the optical axis of the telecentric imaging lens and close to the second right-angle surface of the first right-angle image rotating prism, the second right-angle surface of the second right-angle image rotating prism is parallel and close to the optical axis of the telecentric imaging lens, the inclined surface of the second right-angle image rotating prism is back to the optical axis of the telecentric imaging lens and forms a 45-degree included angle with the optical axis of the telecentric imaging lens, and the inclined surface of the second right-angle image rotating prism is a fully reflecting surface;
the second group of image-turning prism assemblies and the fourth group of image-turning prism assemblies respectively comprise a third right-angle image-turning prism and a fourth right-angle image-turning prism which are arranged adjacently up and down, a first right-angle surface of the third right-angle image-turning prism is parallel to the optical axis of the telecentric imaging lens and close to the imaging input surface of the four-surface image-combining composite prism assembly, a second right-angle surface of the third right-angle image-turning prism is perpendicular to the optical axis of the telecentric imaging lens, the inclined surface of the third right-angle image-turning prism is back to the optical axis of the telecentric imaging lens and forms a 45-degree included angle with the optical axis of the telecentric imaging lens, and the inclined surface of the third right-angle image-turning prism is a total reflection surface;
the first right-angle surface of the fourth right-angle image-rotating prism is perpendicular to the optical axis of the telecentric imaging lens and close to the second right-angle surface of the third right-angle image-rotating prism, the second right-angle surface of the fourth right-angle image-rotating prism is parallel to and far away from the optical axis of the telecentric imaging lens, the inclined surface of the fourth right-angle image-rotating prism is close to the optical axis of the telecentric imaging lens and forms a 45-degree included angle with the optical axis of the telecentric imaging lens, and the inclined surface of the fourth right-angle image-rotating prism is a total reflection surface;
the four-side image-combination composite prism assembly is cuboid, a groove in a regular tetrahedron shape is arranged in the lower body of the four-side image-combination composite prism assembly, the wall surface of the groove is a total reflection surface, four side wall surfaces of the four-side image-combination composite prism are imaging input surfaces, and the top surface of the four-side image-combination composite prism is an imaging output surface;
the semiconductor crystal grain is supported by the glass loading turntable and rotates along with the glass loading turntable, and moves in the direction which is below the fourth right-angle relay prism and vertical to the optical axis;
when the semiconductor crystal grain is positioned at the left side of the detection device, when the distance between the front end surface of the semiconductor crystal grain and a group of fourth right-angle relay prism in the traveling direction is a given working distance WD, the front end surface is imaged on the camera sensor after being relayed by the group of fourth right-angle relay prism, the third right-angle relay prism and the four-side image combination prism assembly, and the imaged image is a first image;
when the semiconductor crystal grain moves to the center of a view field right below the optical axis of the telecentric imaging lens, two side surfaces of the semiconductor crystal grain are imaged on the camera sensor after being respectively subjected to image conversion through two groups of second right-angle imaging prisms, first right-angle imaging prisms and four-side image combination prism assemblies which are arranged oppositely, and the imaging is a second image;
when the semiconductor crystal grain is positioned at the right side of the detection device, when the distance between the rear end surface of the semiconductor crystal grain and another group of fourth right-angle relay prism in the traveling direction is a given working distance WD, the rear end surface is imaged on the camera sensor after being respectively relayed by the fourth right-angle relay prism, the third right-angle relay prism and the four-side image combination prism assembly, and the imaged image is a third image;
imaging detection of the two end faces and the two side faces of the semiconductor crystal grain is realized by laminating and splicing the first image, the second image and the third image, namely imaging of the front end face, the rear end face and the two side faces in the advancing direction of the conductor crystal grain is formed.
Further, the second right-angle relay prism and the fourth right-angle relay prism rotate by an angle theta, theta =1-45 degrees, so that the inclined planes of the second right-angle relay prism and the fourth right-angle relay prism and the optical axis of the telecentric imaging lens form an included angle of 45-theta degrees;
when the semiconductor crystal grain is positioned at the left side of the detection device, when the distance between the front end surface of the semiconductor crystal grain and a group of fourth right-angle relay prism in the traveling direction is a given working distance WD, the front end surface is imaged on the camera sensor after being relayed by the group of fourth right-angle relay prism, the third right-angle relay prism and the four-side image combination prism assembly, and the imaged image is a first image;
when the semiconductor crystal grain moves to the center of a view field right below the optical axis of the telecentric imaging lens, two side surfaces of the semiconductor crystal grain are imaged on the camera sensor after being respectively subjected to image conversion through two groups of second right-angle imaging prisms, first right-angle imaging prisms and four-side image combination prism assemblies which are arranged oppositely, and the imaging is a second image;
when the semiconductor crystal grain is positioned at the right side of the detection device, when the distance between the rear end surface of the semiconductor crystal grain and another group of fourth right-angle relay prism in the traveling direction is a given working distance WD, the rear end surface is imaged on the camera sensor after being respectively relayed by the fourth right-angle relay prism, the third right-angle relay prism and the four-side image combination prism assembly, and the imaged image is a third image;
imaging detection of the two end faces and the two side faces of the semiconductor crystal grain is realized by laminating and splicing the first image, the second image and the third image, namely imaging of the front end face, the rear end face and the two side faces in the advancing direction of the conductor crystal grain is formed.
The invention realizes the advantages of the optical device and the method for the imaging detection of the asynchronous aplanatic images of the two end surfaces and the two side surfaces of the semiconductor crystal grain:
1) the invention realizes that one detection station is used for detecting two end surfaces and two side surfaces of the crystal grain in motion by using the four-side image combination composite prism component and the four groups of image conversion prism components, thereby simplifying the structural complexity of the system, improving the detection efficiency of the system and reducing the cost of the detection system;
2) the second right-angle relay prism and the fourth right-angle relay prism used by the detection device are arranged above the glass turntable and the crystal to be detected, do not need to be in contact with the surface of the crystal grain to be detected, and can realize dynamic detection of two end faces and two side faces of the crystal grain to be detected;
3) the detection device is provided with a station for detecting two opposite surfaces (the top surface and the bottom surface) of the crystal grain, so that simultaneous imaging detection of six surfaces of the crystal grain can be realized on one screening machine, and the missing detection proportion is effectively reduced.
Drawings
FIGS. 1 and 2 are schematic structural views of a conventional inspection apparatus for two opposite surfaces of a semiconductor die;
FIGS. 3 and 4 are schematic structural diagrams of a conventional apparatus for inspecting adjacent surfaces of semiconductor dies;
FIG. 5 is a schematic perspective view of an embodiment of the apparatus of the present invention;
FIG. 6 is a schematic cross-sectional configuration of the second center of symmetry plane Y of FIG. 5;
FIG. 7 is a partial view of FIG. 6;
FIG. 8 is a schematic cross-sectional configuration of the first symmetrical center plane X of FIG. 5;
FIG. 9 is a partial view of FIG. 8;
FIG. 10 is a schematic view of the construction of the alternate embodiment of FIG. 9 (i.e., rotated by an angle θ relative to the fourth right angle relay prism of FIG. 9);
FIG. 11 is a schematic view of the alternate embodiment of FIG. 7 (i.e., rotated by an angle θ relative to the second right angle relay prism of FIG. 7);
fig. 12 is a schematic perspective view of a four-facet image-combining complex prism assembly;
FIG. 13 is a schematic perspective view of an image rotating prism of FIG. 12;
fig. 14 is a first image of a semiconductor die captured by a camera target.
Fig. 15 is a second image of a semiconductor die captured by the camera target.
Fig. 16 is a third image of a semiconductor die captured by the camera target.
Fig. 17 is an image of both end faces and both side faces of a semiconductor die formed by piecing three images.
Detailed Description
The present application will now be described in detail with reference to the drawings, in conjunction with the following examples.
Referring to fig. 5-17, the optical device for realizing asynchronous aplanatic imaging detection of two end faces and two side faces of a semiconductor crystal grain of the invention is sequentially provided with a camera 1, a telecentric imaging lens 2, a four-side image combination composite prism assembly 3, four groups of image rotation prism assemblies K, a semiconductor crystal grain 6 and a glass carrying turntable 7 in the optical path direction of the optical device, wherein the four-side image combination composite prism assembly 3 is positioned on an optical axis a of the telecentric imaging lens.
The semiconductor crystal grain 6 is in a cuboid shape or a square shape and comprises a front end face 6a, a rear end face 6b, two side faces 6c and 6d, a top face and a bottom face, and the detection of the front end face 6a, the rear end face 6b and the two side faces 6c and 6d of the semiconductor crystal grain can be realized by the method; the semiconductor die 6 is supported by and rotates with a glass carrier disk 7, the glass carrier disk 7 can be driven by a motor or the like to rotate continuously or intermittently, and the camera 1 can be a CMOS camera or a CCD camera or the like.
The four sets of relay prism assemblies K are respectively a first set of relay prism assembly K1, a second set of relay prism assembly K2, a third set of relay prism assembly K3 and a fourth set of relay prism assembly K4, wherein the first set of relay prism assembly K1 and the third set of relay prism assembly K3 are symmetrical about a first central plane of symmetry X, the second set of relay prism assembly K2 and the fourth set of relay prism assembly K4 are symmetrical about a second central plane of symmetry Y, and the intersection line of the first central plane of symmetry and the second central plane of symmetry coincides with the optical axis a.
Wherein the first set of prism assembly K1 and the third set of prism assembly K3 each include a first right-angle rotating prism 4a and a second right-angle rotating prism 4b (as shown in fig. 6 and 7) disposed adjacently up and down, a first right-angle surface 401 of the first right-angle rotating prism 4a is parallel to the optical axis of the telecentric imaging lens and is close to an imaging input surface 301 of the four-surface imaging composite prism assembly (the four-surface imaging composite prism assembly is in a square shape and has four imaging input surfaces 301, two opposite surfaces of the four imaging input surfaces 301 are also symmetrical with respect to a first symmetrical center surface X or a second symmetrical center surface Y, the first right-angle surface 401 is parallel to the imaging input surface 301), a second right-angle surface 402 of the first right-angle rotating prism is perpendicular to the optical axis of the telecentric imaging lens, the second right-angle surface 402 is also perpendicular to the aforementioned imaging input surface 301, an inclined surface 403 of the first right-angle rotating prism faces away from the telecentric imaging lens and forms a 45 degree angle with the telecentric imaging lens, the inclined surface 403 of the first right-angle rotating image prism is a total reflection surface.
The first right-angle surface 404 of the second right-angle image rotating prism 4b is perpendicular to the optical axis of the telecentric imaging lens and is close to and parallel to the second right-angle surface 402 of the first right-angle image rotating prism, the second right-angle surface 405 of the second right-angle image rotating prism is parallel to and is close to the optical axis of the telecentric imaging lens, the second right-angle surface 405 is also perpendicular to the first right-angle surface 404, the inclined surface 406 of the second right-angle image rotating prism faces away from the optical axis of the telecentric imaging lens and forms a 45-degree included angle with the telecentric imaging lens, and the inclined surface of the second right-angle image rotating prism is a total reflection surface.
The second set of relay prism assembly K2 and the fourth set of relay prism assembly K4 both include a third right-angle relay prism 5a and a fourth right-angle relay prism 5b (as shown in fig. 8 and 9) disposed adjacent to each other from top to bottom, a first right-angle surface 501 of the third right-angle relay prism 5a is parallel to the optical axis of the telecentric imaging lens and close to and parallel to an imaging input surface 301 of the four-surface image-combining composite prism assembly, a second right-angle surface 502 of the third right-angle relay prism is perpendicular to the optical axis of the telecentric imaging lens, an inclined surface 503 of the third right-angle relay prism faces away from the optical axis of the telecentric imaging lens and forms a 45-degree included angle with the optical axis, and an inclined surface of the third right-angle relay prism is a total reflection surface.
The first right-angle surface 504 of the fourth right-angle relay prism 5b is perpendicular to the optical axis of the telecentric imaging lens and close to and parallel to the second right-angle surface 502 of the third right-angle relay prism, the second right-angle surface 505 of the fourth right-angle relay prism is parallel to and far away from the optical axis of the telecentric imaging lens, the second right-angle surface 505 is also perpendicular to the first right-angle surface 504, the inclined surface 506 of the fourth right-angle relay prism is close to the optical axis of the telecentric imaging lens and forms a 45-degree included angle with the telecentric imaging lens, and the inclined surface of the fourth right-angle relay prism is a total reflection surface.
The four-side image-combination composite prism assembly is in a cuboid shape or a square shape, a groove 302 in a regular tetrahedron shape is arranged in the lower body of the four-side image-combination composite prism assembly, the wall surface 303 of the groove is a total reflection surface, four side wall surfaces of the four-side image-combination composite prism are imaging input surfaces 301, two opposite surfaces of the four imaging input surfaces 301 are also symmetrical about a first symmetrical center surface X or a second symmetrical center surface Y, a top surface 304 of the four-side image-combination composite prism is an imaging output surface, and the top surface 304 of the four-side image-combination composite prism is perpendicular to an optical axis A.
The semiconductor crystal grain is supported by the glass loading turntable and rotates along with the glass loading turntable, and moves in the direction which is under the fourth right-angle relay prism 5b and is vertical to the optical axis.
The right-angle surfaces, the imaging input surface and the imaging output surface are light-permeable, and the wall surfaces of the inclined surfaces or the grooves can realize the total reflection function by attaching a total reflection film or plating a total reflection film layer and the like.
The first right-angle relay prism, the second right-angle relay prism, the third right-angle relay prism and the fourth right-angle relay prism are arranged up and down and can be parallel and level or staggered in the left-right direction, the first right-angle relay prism and the second right-angle relay prism are staggered in the left-right direction as shown in fig. 7, the third right-angle relay prism and the fourth right-angle relay prism are not staggered in the left-right direction as shown in fig. 9 (the third right-angle relay prism and the fourth right-angle relay prism are allowed to be staggered for a certain distance), and the specific relative positions are used for debugging to realize that two end faces and two side faces of the semiconductor crystal grain 6 can acquire and obtain images on the camera sensor.
In another embodiment, in order to better convert the off-axis object to the on-axis object so as to obtain an image in the central region of the camera sensor, the second right-angle image transfer prism and the fourth right-angle image transfer prism may rotate by an angle θ, which may be in a range of 1-45 degrees, preferably in a range of 1-5 degrees, with respect to the previous embodiment (i.e., the embodiment shown in fig. 6-9), so that the inclined planes of the second right-angle image transfer prism and the fourth right-angle image transfer prism form an angle of 45- θ degrees with the optical axis of the telecentric imaging lens, such as θ =3 degrees, and the inclined planes of the second right-angle image transfer prism and the fourth right-angle image transfer prism form an angle of 42 degrees with the optical axis of the telecentric imaging lens.
The four-facet image-combining composite prism assembly 3 in the above embodiment is in a rectangular or square shape, a groove 302 in a regular four-facet shape is arranged in the lower body, the wall surface 303 of the groove is a total reflection surface, the four side wall surfaces of the four-facet image-combining composite prism are imaging input surfaces 301, and the top surface 304 of the four-facet image-combining composite prism is an imaging output surface; the specific four-sided image-combining composite prism assembly 3 can be formed by splicing 4 image-rotating prisms 305 (as shown in fig. 12 and 13), when the four-sided image-combining composite prism assembly is a cube, four identical image-rotating prisms are preferably spliced and formed by cutting a right-angled prism, a cutting plane (i.e. a wall surface 303 of a groove formed later) passes through a point 306 on a first edge of the prism and lower end points 307 of the other two edges of the prism, and the first edge and the edge surface of the 4 image-rotating prisms are closely adhered to each other to form the four-sided image-combining composite prism assembly 3 (as shown in fig. 12 and 13).
The semiconductor crystal grain 6 is supported by a glass carrying rotary disc 7 and rotates along with the glass carrying rotary disc 7, the glass carrying rotary disc 7 can be driven to rotate by a motor and the like, and the semiconductor crystal grain 6 moves under the second right-angle rotating image prism and the fourth right-angle rotating image prism and in the direction perpendicular to the optical axis.
The distance d (including d1 and d 2) =0.5-1.0mm between the lower ends of the second right-angle relay prism and the fourth right-angle relay prism and the semiconductor die top surface, and in a measuring station, an embodiment is that when the distance WD (including WD1 and WD 2) =42-65 mm) between the lower ends of the second right-angle relay prism and the fourth right-angle relay prism is equal to 65mm, wherein WD1=65mm is shown in fig. 10, WD1 is the distance between the lower end of the semiconductor die and the fourth right-angle relay prism, a camera starts to shoot an end face image of the semiconductor die, WD2=42mm is shown in fig. 11, and WD2 is the distance between the lower end of the second right-angle relay prism and the side surface of the semiconductor die when the semiconductor die is located right below the camera.
The distance between the images of the two end faces and the two side faces and the center of an imaging sensor of the CMOS camera 1 is adjusted by adjusting the position of the image combination composite prism component 3 of the device up and down, so that an off-axis point is imaged to a view field central area close to the sensor face of the camera.
Wherein the light path trend is:
as shown in fig. 5 to 11, when the semiconductor die is located on the left side of the inspection apparatus, the distance from the front end surface 6a of the semiconductor die in the traveling direction to a set of fourth rectangular relay prisms is set to a given working distance WD1=65mm, the front end surface 6a passes through the set of fourth rectangular relay prisms 5b (incident from the second right-angle surface 505 of the fourth rectangular relay prism 5b, reflected by the inclined surface 506 of the fourth rectangular relay prism 5b, and emitted from the first right-angle surface 504 of the fourth rectangular relay prism 5 b), the third rectangular relay prism 5a (incident from the second right-angle surface 502 of the third rectangular relay prism 5a, reflected by the inclined surface 503 of the third rectangular relay prism 5a, and emitted from the first right-angle surface 501 of the third rectangular relay prism 5 a), and the four-surface-combination prism assembly 3 (incident from an imaging input surface 301, reflected by the wall surface 303, and emitted from the sky surface 304) and then passes through the imaging lens 2, finally, imaging on a camera sensor, wherein the imaging is a first image (shown in figure 14);
as shown in fig. 5-13, when the semiconductor die moves to the center of the field of view right below the optical axis of the telecentric imaging lens, two side surfaces 6c, 6d of the semiconductor die are respectively imaged by two sets of oppositely disposed second right-angle relay prisms 4b (incident from the second right-angle surface 405 of the second right-angle relay prism 4b, reflected by the inclined surface 406 of the second right-angle relay prism 4b, emitted from the first right-angle surface 404 of the second right-angle relay prism 4 b), first right-angle relay prisms 4a (incident from the second right-angle surface 402 of the first right-angle relay prism 4a, reflected by the inclined surface 403 of the first right-angle relay prism 4a, emitted from the first right-angle surface 401 of the first right-angle relay prism 4 a), and four-surface imaging composite prism assemblies 3 (incident from an imaging input surface 301, reflected by the wall surface 303, emitted from the ceiling surface 304), then pass through the telecentric imaging lens 2, and finally imaged on the camera sensor, the imaging is a second image (as shown in fig. 15), and the semiconductor die is imaged on two sides of the station by one image;
as shown in fig. 5 to 13, when the semiconductor die is located on the right side of the inspection apparatus, the rear end surface 6b of the semiconductor die in the traveling direction is located at a given working distance WD1=65mm from the set of fourth rectangular relay prisms, the rear end surface 6b is similarly transferred through the set of fourth rectangular relay prisms 5b (incident from the second right-angle surface 505 of the fourth rectangular relay prism 5b, reflected by the inclined surface 506 of the fourth rectangular relay prism 5b, and emitted from the first right-angle surface 504 of the fourth rectangular relay prism 5 b), the third rectangular relay prisms 5a (incident from the second telecentric right-angle surface 502 of the third rectangular relay prism 5a, reflected by the inclined surface 503 of the third rectangular relay prism 5a, and emitted from the first right-angle surface 501 of the third rectangular relay prism 5 a), and the four-surface-coupling complex prism assembly 3 (incident from an imaging input surface 301, reflected by the wall surface 303, and emitted from the top surface 304) and then transferred through the imaging lens 2, finally, imaging on the camera sensor, wherein the imaging is a third image (shown in figure 16);
imaging detection of both end faces and both side faces of the semiconductor die is achieved by laminating and stitching the first image, the second image, and the third image, i.e., forming images of both end faces and both side faces in the direction of travel of the conductor die (as shown in fig. 17).
When the second right-angle relay prism and the fourth right-angle relay prism rotate 3 degrees (as shown in fig. 10 and 11), the inclined planes of the second right-angle relay prism and the fourth right-angle relay prism form an included angle of 42 with the optical axis of the telecentric imaging lens; wherein the light path direction is as also described above; the second right-angle relay prism and the fourth right-angle relay prism rotate for an angle, so that an off-axis object can be converted into an on-axis object, and imaging can be better obtained in the central area of the camera sensor.
The invention realizes the advantages of the optical device and the method for the asynchronous aplanatic imaging detection of the two end faces and the two side faces of the semiconductor crystal grain:
1) the invention realizes that one detection station is used for detecting two end surfaces and two side surfaces of the crystal grain in motion by using the four-side image combination composite prism component and the four groups of image conversion prism components, thereby simplifying the structural complexity of the system, improving the detection efficiency of the system and reducing the cost of the detection system;
2) the second right-angle relay prism and the fourth right-angle relay prism used by the detection device are arranged above the glass turntable and the crystal to be detected, do not need to be in contact with the surface of the crystal grain to be detected, and can realize dynamic detection of two end faces and two side faces of the crystal grain to be detected;
3) the detection device is provided with a station for detecting two opposite surfaces (the top surface and the bottom surface) of the crystal grain, so that simultaneous imaging detection of six surfaces of the crystal grain can be realized on one screening machine, and the missing detection proportion is effectively reduced.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention and not to limit it; although the present invention has been described in detail with reference to preferred embodiments, those skilled in the art will understand that: modifications to the specific embodiments of the invention or equivalent substitutions for parts of the technical features may be made; without departing from the spirit of the present invention, it is intended to cover all aspects of the invention as defined by the appended claims.
Claims (7)
1. An optical device for realizing asynchronous aplanatic imaging detection of two end faces and two side faces of a semiconductor crystal grain is characterized in that: a camera, a telecentric imaging lens, a four-side image combination composite prism assembly, four groups of image rotation prism assemblies, semiconductor crystal grains and a glass carrying turntable are sequentially arranged in the optical path direction of the optical device, and the four-side image combination composite prism assembly is positioned on the optical axis of the telecentric imaging lens;
the four groups of relay prism assemblies are respectively a first group of relay prism assemblies, a second group of relay prism assemblies, a third group of relay prism assemblies and a fourth group of relay prism assemblies, wherein the first group of relay prism assemblies and the third group of relay prism assemblies are symmetrical about a first symmetrical central plane, the second group of relay prism assemblies and the fourth group of relay prism assemblies are symmetrical about a second symmetrical central plane, and the intersection line of the first symmetrical central plane and the second symmetrical central plane is coincided with the optical axis;
the first group of image rotating prism components and the third group of image rotating prism components both comprise a first right-angle image rotating prism and a second right-angle image rotating prism which are arranged adjacently up and down, a first right-angle surface of the first right-angle image rotating prism is parallel to the optical axis of the telecentric imaging lens and close to the imaging input surface of the four-surface image combining composite prism component, a second right-angle surface of the first right-angle image rotating prism is perpendicular to the optical axis of the telecentric imaging lens, the inclined surface of the first right-angle image rotating prism is back to the optical axis of the telecentric imaging lens and forms a 45-degree included angle with the optical axis of the telecentric imaging lens, and the inclined surface of the first right-angle image rotating prism is a total reflection surface;
the first right-angle surface of the second right-angle image rotating prism is perpendicular to the optical axis of the telecentric imaging lens and close to the second right-angle surface of the first right-angle image rotating prism, the second right-angle surface of the second right-angle image rotating prism is parallel to the optical axis of the telecentric imaging lens and close to the optical axis of the telecentric imaging lens, the inclined surface of the second right-angle image rotating prism faces back to the optical axis of the telecentric imaging lens and forms a 45-degree included angle with the optical axis of the telecentric imaging lens, and the inclined surface of the second right-angle image rotating prism is a total reflection surface;
the second group of image-turning prism assemblies and the fourth group of image-turning prism assemblies respectively comprise a third right-angle image-turning prism and a fourth right-angle image-turning prism which are arranged adjacently up and down, a first right-angle surface of the third right-angle image-turning prism is parallel to the optical axis of the telecentric imaging lens and close to the imaging input surface of the four-surface image-combining composite prism assembly, a second right-angle surface of the third right-angle image-turning prism is perpendicular to the optical axis of the telecentric imaging lens, the inclined surface of the third right-angle image-turning prism is back to the optical axis of the telecentric imaging lens and forms a 45-degree included angle with the optical axis of the telecentric imaging lens, and the inclined surface of the third right-angle image-turning prism is a total reflection surface;
the first right-angle surface of the fourth right-angle image-rotating prism is perpendicular to the optical axis of the telecentric imaging lens and close to the second right-angle surface of the third right-angle image-rotating prism, the second right-angle surface of the fourth right-angle image-rotating prism is parallel to and far away from the optical axis of the telecentric imaging lens, the inclined surface of the fourth right-angle image-rotating prism is close to the optical axis of the telecentric imaging lens and forms a 45-degree included angle with the optical axis of the telecentric imaging lens, and the inclined surface of the fourth right-angle image-rotating prism is a total reflection surface;
the four-side image-combination composite prism assembly is cuboid, a groove in a regular tetrahedron shape is arranged in the lower body of the four-side image-combination composite prism assembly, the wall surface of the groove is a total reflection surface, four side wall surfaces of the four-side image-combination composite prism are imaging input surfaces, two opposite surfaces of the four side wall surfaces are symmetrical relative to a first symmetrical central surface or a second symmetrical central surface, and the top surface of the four-side image-combination composite prism is an imaging output surface;
the semiconductor crystal grain is supported by the glass carrying turntable to rotate along with the glass carrying turntable and moves in the direction which is under the fourth right-angle image rotating prism and is vertical to the optical axis.
2. The optical device of claim 1, wherein the two end faces and two side faces of the semiconductor die are asynchronously aplanatic for imaging detection, the optical device comprising: the second right-angle image rotating prism and the fourth right-angle image rotating prism rotate by an angle theta, and theta =1-45 degrees, so that the inclined planes of the second right-angle image rotating prism and the fourth right-angle image rotating prism and the optical axis of the telecentric imaging lens form an included angle of 45-theta degrees.
3. The optical device according to claim 1 or 2, wherein the two end faces and two side faces of the semiconductor die are asynchronously aplanatic for imaging detection, and the optical device comprises: the four-side image combination composite prism assembly is formed by splicing 4 image rotation prisms, each image rotation prism is formed by cutting a triangular prism, a cutting surface penetrates through one point on the first edge of the triangular prism and the lower end points of the other two edges of the triangular prism, and the first edges of the 4 image rotation prisms are mutually attached to form the four-side image combination composite prism assembly.
4. The optical device of claim 3, wherein the two end faces and two side faces of the semiconductor die are asynchronously aplanatic for imaging detection, the optical device comprising: the distance d between the lower end of the second right-angle rotating image prism or the fourth right-angle rotating image prism and the semiconductor crystal grain top surface is =0.5-1.0mm, and the distance WD between the lower end of the second right-angle rotating image prism or the fourth right-angle rotating image prism and the semiconductor crystal grain is =42-65mm during detection.
5. The optical device of claim 2, wherein the two end faces and two side faces of the semiconductor die are asynchronously aplanatic for imaging detection, the optical device comprising: the θ =1-5 degrees.
6. A method for realizing asynchronous aplanatic imaging detection of two end faces and two side faces of a semiconductor crystal grain is characterized by comprising the following steps: a camera, a telecentric imaging lens, a four-side image combination composite prism assembly, four groups of image rotation prism assemblies, semiconductor crystal grains and a glass carrying turntable are sequentially arranged in the optical path direction of the optical device, and the four-side image combination composite prism assembly is positioned on the optical axis of the telecentric imaging lens;
the four groups of relay lens components are respectively a first group of relay lens components, a second group of relay lens components, a third group of relay lens components and a fourth group of relay lens components, wherein the first group of relay lens components and the third group of relay lens components are symmetrical relative to a first symmetrical central plane, the second group of relay lens components and the fourth group of relay lens components are symmetrical relative to a second symmetrical central plane, and the intersecting line of the first symmetrical central plane and the second symmetrical central plane is coincident with the optical axis;
the first group of image rotating prism components and the third group of image rotating prism components both comprise a first right-angle image rotating prism and a second right-angle image rotating prism which are arranged adjacently up and down, a first right-angle surface of the first right-angle image rotating prism is parallel to the optical axis of the telecentric imaging lens and close to the imaging input surface of the four-surface image combining composite prism component, a second right-angle surface of the first right-angle image rotating prism is perpendicular to the optical axis of the telecentric imaging lens, the inclined surface of the first right-angle image rotating prism is back to the optical axis of the telecentric imaging lens and forms a 45-degree included angle with the optical axis of the telecentric imaging lens, and the inclined surface of the first right-angle image rotating prism is a total reflection surface;
the first right-angle surface of the second right-angle image rotating prism is perpendicular to the optical axis of the telecentric imaging lens and close to the second right-angle surface of the first right-angle image rotating prism, the second right-angle surface of the second right-angle image rotating prism is parallel to the optical axis of the telecentric imaging lens and close to the optical axis of the telecentric imaging lens, the inclined surface of the second right-angle image rotating prism faces back to the optical axis of the telecentric imaging lens and forms a 45-degree included angle with the optical axis of the telecentric imaging lens, and the inclined surface of the second right-angle image rotating prism is a total reflection surface;
the second group of image-rotating prism components and the fourth group of image-rotating prism components both comprise a third right-angle image-rotating prism and a fourth right-angle image-rotating prism which are arranged adjacently up and down, a first right-angle surface of the third right-angle image-rotating prism is parallel to the optical axis of the telecentric imaging lens and close to the imaging input surface of the four-surface image-combining composite prism component, a second right-angle surface of the third right-angle image-rotating prism is perpendicular to the optical axis of the telecentric imaging lens, the inclined surface of the third right-angle image-rotating prism is back to the optical axis of the telecentric imaging lens and forms a 45-degree included angle with the optical axis of the telecentric imaging lens, and the inclined surface of the third right-angle image-rotating prism is a fully-reflecting surface;
the first right-angle surface of the fourth right-angle image-rotating prism is perpendicular to the optical axis of the telecentric imaging lens and close to the second right-angle surface of the third right-angle image-rotating prism, the second right-angle surface of the fourth right-angle image-rotating prism is parallel to and far away from the optical axis of the telecentric imaging lens, the inclined surface of the fourth right-angle image-rotating prism is close to the optical axis of the telecentric imaging lens and forms a 45-degree included angle with the optical axis of the telecentric imaging lens, and the inclined surface of the fourth right-angle image-rotating prism is a total reflection surface;
the four-side image-combination composite prism assembly is cuboid, a groove in a regular tetrahedron shape is arranged in the lower body of the four-side image-combination composite prism assembly, the wall surface of the groove is a total reflection surface, four side wall surfaces of the four-side image-combination composite prism are imaging input surfaces, and the top surface of the four-side image-combination composite prism is an imaging output surface;
the semiconductor crystal grain is supported by the glass loading turntable and rotates along with the glass loading turntable, and moves in the direction which is below the fourth right-angle relay prism and vertical to the optical axis;
when the semiconductor crystal grain is positioned at the left side of the detection device, when the distance between the front end surface of the semiconductor crystal grain and a group of fourth right-angle relay prism in the traveling direction is a given working distance WD, the front end surface is imaged on the camera sensor after being relayed by the group of fourth right-angle relay prism, the third right-angle relay prism and the four-side image combination prism assembly, and the imaged image is a first image;
when the semiconductor crystal grain moves to the center of a view field right below the optical axis of the telecentric imaging lens, two side surfaces of the semiconductor crystal grain are imaged on the camera sensor after being respectively subjected to image conversion through two groups of second right-angle imaging prisms, first right-angle imaging prisms and four-side image combination prism assemblies which are arranged oppositely, and the imaging is a second image;
when the semiconductor crystal grain is positioned at the right side of the detection device, when the distance between the rear end surface of the semiconductor crystal grain and another group of fourth right-angle relay prism in the traveling direction is a given working distance WD, the rear end surface is imaged on the camera sensor after being respectively relayed by the fourth right-angle relay prism, the third right-angle relay prism and the four-side image combination prism assembly, and the imaged image is a third image;
imaging detection of the two end faces and the two side faces of the semiconductor crystal grain is realized by laminating and splicing the first image, the second image and the third image, namely imaging of the front end face, the rear end face and the two side faces in the advancing direction of the conductor crystal grain is formed.
7. The method of claim 6, wherein the step of performing simultaneous aplanatic imaging on all sides of the semiconductor die comprises: the second right-angle image rotating prism and the fourth right-angle image rotating prism rotate by an angle theta, and the theta =1-45 degrees, so that the inclined planes of the second right-angle image rotating prism and the fourth right-angle image rotating prism and the optical axis of the telecentric imaging lens form an included angle of 45-theta degrees;
when the semiconductor crystal grain is positioned at the left side of the detection device, when the distance between the front end surface of the semiconductor crystal grain and a group of fourth right-angle relay prism in the traveling direction is a given working distance WD, the front end surface is imaged on the camera sensor after being relayed by the group of fourth right-angle relay prism, the third right-angle relay prism and the four-side image combination prism assembly, and the imaged image is a first image;
when the semiconductor crystal grain moves to the center of a view field right below the optical axis of the telecentric imaging lens, two side surfaces of the semiconductor crystal grain are imaged on the camera sensor after being respectively subjected to image conversion through two groups of second right-angle imaging prisms, first right-angle imaging prisms and four-side image combination prism assemblies which are arranged oppositely, and the imaging is a second image;
when the semiconductor crystal grain is positioned at the right side of the detection device, when the distance between the rear end surface of the semiconductor crystal grain and another group of fourth right-angle relay prism in the traveling direction is a given working distance WD, the rear end surface is imaged on the camera sensor after being respectively relayed by the fourth right-angle relay prism, the third right-angle relay prism and the four-side image combination prism assembly, and the imaged image is a third image;
the imaging detection of the two end faces and the two side faces of the semiconductor crystal grain is realized by laminating and splicing the first image, the second image and the third image, namely forming the imaging of the front end face, the rear end face and the two side faces in the advancing direction of the conductor crystal grain.
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| PCT/CN2022/137093 WO2023216573A1 (en) | 2022-05-12 | 2022-12-07 | Optical device and method for implementing asynchronous equal optical path imaging detection between two end faces and two side faces of semiconductor die |
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