CN217878948U - Device for realizing imaging detection of front end face and rear end face in advancing direction of semiconductor crystal grain - Google Patents
Device for realizing imaging detection of front end face and rear end face in advancing direction of semiconductor crystal grain Download PDFInfo
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Abstract
The utility model relates to a realize the device that the formation of image of both ends face detected around on the semiconductor crystalline grain advancing direction, its characterized in that: a camera, a telecentric imaging lens, an image-combining prism, a first set of image-rotating prism components, a second set of image-rotating prism components, a semiconductor crystal grain and a glass carrying turntable are sequentially arranged in the optical path direction of the optical device, and the image-combining prism is positioned on the optical axis of the telecentric imaging lens; the detection device can realize the dynamic detection of two end faces in the movement direction of the semiconductor crystal grain, simultaneously reduces the requirement on the size of the field of view of the imaging lens and effectively controls the cost of the detection device; the utility model discloses third, fourth right angle reprint prism that detection device used installs in the top that glass carried thing carousel and semiconductor crystalline grain, need not with semiconductor crystalline grain surface contact, and can not produce with glass carries the thing carousel and interfere, can realize the dynamic detection of semiconductor crystalline grain preceding, back both ends face on the advancing direction.
Description
Technical Field
The utility model relates to a device for realizing imaging detection of front and back end surfaces in the advancing direction of semiconductor crystal grains.
Background
The traditional machine vision optical detection device mainly comprises a camera, an imaging lens, an illumination light source, image processing algorithm software, an electrical control device, a mechanical structure, an object to be detected (such as a semiconductor refrigeration device crystal grain) and the like, wherein the object is illuminated by the light source, the object obtains an image of the object on a CCD detector surface through the optical imaging lens, the image is transmitted to a computer through an image acquisition card and an A-D conversion module, finally, required image information is obtained through a digital image processing technology, and the size, the shape and the color are distinguished and measured according to information such as pixel distribution, brightness and color, so that the on-site equipment operation is controlled.
The currently published patents propose various methods for realizing double-sided imaging detection of an object to be detected (semiconductor die), for example, fig. 1 is an invention patent application with an application number of 201911369257.3, fig. 2 is an invention patent application with an application number of 202010133044.7, and fig. 3 is an invention patent application with an application number of 202010250856.X, but the methods proposed so far are only suitable for imaging detection of two adjacent sides or two opposite sides of a semiconductor die, or detection of four sides by using two detection stations.
In order to improve the detection efficiency, the semiconductor crystal grain screening machine needs to have the requirement of six-surface defect detection including two end surfaces, but the imaging detection of the front end surface (or the rear end surface) of an object in the moving direction of a loading turntable is not solved so far; the main difficulty that meets is that the imaging optical device is directly arranged right ahead of the end face of an object to be measured of a loading turntable and is difficult to contact with the loading glass turntable, and the optical axis of the imaging optical device needs to form a small angle with the normal line of the end face of the object to obtain the imaging of the end face, so that the difficulty existing in the detection of the end face of the object at present is overcome.
The utility model has the following contents:
in view of the above problems in the prior art, the present invention provides an apparatus for realizing imaging detection of front and back end faces in the advancing direction of a semiconductor die.
The utility model discloses realize the device that the formation of image of both ends face detected around on the semiconductor crystalline grain advancing direction, its characterized in that: a camera, a telecentric imaging lens, an image-combining prism, a first set of image-rotating prism components, a second set of image-rotating prism components, a semiconductor crystal grain and a glass carrying turntable are sequentially arranged in the optical path direction of the optical device, and the image-combining prism is positioned on the optical axis of the telecentric imaging lens;
the first group of image rotating prism components are a first right-angle image rotating prism and a second right-angle image rotating prism which are symmetrically arranged at two sides of the image combining prism, first right-angle edges of the first right-angle image rotating prism and the second right-angle image rotating prism are parallel to the optical axis of the telecentric imaging lens, second right-angle edges of the first right-angle image rotating prism and the second right-angle image rotating prism are perpendicular to the optical axis of the telecentric imaging lens, and inclined planes of the first right-angle image rotating prism and the second right-angle image rotating prism back to the optical axis of the telecentric imaging lens and form a 45-degree included angle with the optical axis;
the second set of relay prism components are a third right-angle relay prism and a fourth right-angle relay prism which are symmetrically arranged below the first set of relay prism components; the first right-angle sides of the third right-angle image rotating prism and the fourth right-angle image rotating prism are far away from the optical axis of the telecentric imaging lens, the second right-angle sides of the third right-angle image rotating prism and the fourth right-angle image rotating prism are close to the second right-angle sides of the first right-angle image rotating prism or the second right-angle image rotating prism, and the inclined surfaces of the third right-angle image rotating prism and the fourth right-angle image rotating prism are close to the optical axis of the telecentric imaging lens;
the semiconductor crystal grain is supported by the glass carrying turntable and rotates along with the glass carrying turntable, and moves in the direction which is below the second group of image rotating prism components and vertical to the optical axis, and the front end face and the rear end face of the semiconductor crystal grain in the advancing direction, namely the first end face and the second end face of the semiconductor crystal grain, are parallel to the optical axis of the telecentric imaging lens.
The first right-angle sides of the third right-angle image rotating prism and the fourth right-angle image rotating prism are parallel to the optical axis of the telecentric imaging lens, the second right-angle sides are perpendicular to the optical axis of the telecentric imaging lens, and the inclined plane faces the optical axis of the telecentric imaging lens and forms a 45-degree included angle with the optical axis of the telecentric imaging lens.
In one embodiment, the third right-angle relay prism and the fourth right-angle relay prism rotate by an angle theta, so that the inclined planes of the third right-angle relay prism and the fourth right-angle relay prism and the optical axis of the telecentric imaging lens form an included angle of 45-theta.
In one embodiment, glass optical wedges are respectively arranged between the first right-angle rotating image prism, the second right-angle rotating image prism and the image combination prism, and the two glass optical wedges are symmetrically arranged to refract an optical axis of a semiconductor crystal grain to generate a certain angle deflection.
In one embodiment, the glass optical wedge is a right triangle, one right-angle side of the glass optical wedge is parallel to the optical axis, the inclined plane faces the image combining prism, and the right-angle side and the inclined plane are spaced from the first right-angle rotating image prism, the second right-angle rotating image prism and the image combining prism.
In one embodiment, the glass optical wedges are integrally connected to the first right-angle sides of the first right-angle relay prism and the second right-angle relay prism, and the inclined surfaces are spaced from the relay prism.
In one embodiment, the image-combining prism is rectangular, the top surface of the image-combining prism close to the camera is a plane of imaging output and is perpendicular to the optical axis of the telecentric imaging lens, and the left plane and the right plane of the image-combining prism are imaging input surfaces parallel to the optical axis of the telecentric imaging lens respectively; the image combination prism is far away from the camera, the middle of the bottom surface perpendicular to the optical axis is provided with total reflection surfaces which form an angle of 90 degrees with each other, and the total reflection surfaces form a V-shaped groove.
The utility model discloses realize the method that the formation of image of front and back both ends face detected in the semiconductor crystalline grain advancing direction, the device that realizes the formation of image of front and back both ends face detected in the semiconductor crystalline grain advancing direction has set gradually CMOS camera, telecentric imaging lens, image-combining prism, first group image-transferring prism subassembly, second group image-transferring prism subassembly, semiconductor crystalline grain and glass carry the thing carousel in the light path direction, the image-combining prism is located telecentric imaging lens's optical axis;
the first group of image rotating prism components are a first right-angle image rotating prism and a second right-angle image rotating prism which are symmetrically arranged at two sides of the image merging prism, first right-angle sides of the first right-angle image rotating prism and the second right-angle image rotating prism are parallel to the optical axis of the telecentric imaging lens, second right-angle sides of the first right-angle image rotating prism and the second right-angle image rotating prism are perpendicular to the optical axis of the telecentric imaging lens, and inclined surfaces of the first right-angle image rotating prism and the second right-angle image rotating prism back to the optical axis of the telecentric imaging lens and form a 45-degree included angle with the optical axis of the telecentric imaging lens;
the second group of relay prism components are a third right-angle relay prism and a fourth right-angle relay prism which are symmetrically arranged below the first group of relay prism components; the first right-angle sides of the third right-angle image rotating prism and the fourth right-angle image rotating prism are far away from the optical axis of the telecentric imaging lens, the second right-angle sides of the third right-angle image rotating prism and the fourth right-angle image rotating prism are close to the second right-angle sides of the first right-angle image rotating prism or the second right-angle image rotating prism, and the inclined surfaces of the third right-angle image rotating prism and the fourth right-angle image rotating prism are close to the optical axis of the telecentric imaging lens;
the semiconductor crystal grains are supported by the glass carrying turntable and rotate along with the glass carrying turntable, and move in the direction which is below the second group of image rotating prism assemblies and is vertical to the optical axis, and the front end face and the rear end face of the semiconductor crystal grains in the advancing direction, namely the first end face and the second end face of the semiconductor crystal grains are parallel to the optical axis of the telecentric imaging lens; when the semiconductor crystal grain is positioned at the left side of the detection device, and the distance between the first end surface of the semiconductor crystal grain and the third right-angle image rotating prism is a given working distance, the first end surface is imaged on the camera sensor after being subjected to image rotation through the third right-angle image rotating prism, the first right-angle image rotating prism and the image combination prism; when the semiconductor crystal grain moves to the right side of the detection device, and the distance between the second end surface of the semiconductor crystal grain and the fourth right-angle relay prism is a given working distance, the second end surface is imaged in another area on the camera sensor after being relayed by the fourth right-angle relay prism, the second right-angle relay prism and the image combination prism;
the first right-angle sides of the third right-angle image rotating prism and the fourth right-angle image rotating prism are parallel to the optical axis of the telecentric imaging lens, the second right-angle sides are perpendicular to the optical axis of the telecentric imaging lens, and the inclined planes face the optical axis of the telecentric imaging lens and form an included angle of 45 degrees with the optical axis of the telecentric imaging lens; when the semiconductor crystal grain is positioned at the left side of the detection device, and the distance between the first end surface of the semiconductor crystal grain and the third right-angle relay prism is a given working distance, the first end surface forms an image on the left side of the camera sensor after being subjected to image conversion through the third right-angle relay prism, the first right-angle relay prism and the image combination prism; when the semiconductor crystal grain moves to the right side of the detection device, and the distance between the second end surface of the semiconductor crystal grain and the fourth right-angle relay prism is a given working distance, the second end surface forms an image on the right side of the camera sensor after being relayed by the fourth right-angle relay prism, the second right-angle relay prism and the image combination prism;
and adjusting the given working distance and the focal length of the telecentric imaging lens to ensure that the end faces of the front and the rear semiconductor crystal grains meet the imaging conditions at the same time point, obtaining simultaneous imaging detection of the two end faces of the two semiconductor crystal grains on a sensor of a camera, and splicing the two images by intercepting the right side image in the previous image and the left side image in the subsequent image to form the imaging of the front and the rear end faces in the advancing direction of the semiconductor crystal grains, namely realizing the imaging detection of the two end faces of the semiconductor crystal grains.
In one embodiment, the third right-angle relay prism and the fourth right-angle relay prism rotate by an angle theta, so that the inclined planes of the third right-angle relay prism and the fourth right-angle relay prism and the optical axis of the telecentric imaging lens form an included angle of 45-theta, and the imaging conversion from the off-axis object imaging to the on-axis object imaging is realized; when the semiconductor crystal grain is positioned at the left side of the detection device, and the distance between the first end surface of the semiconductor crystal grain and the third right-angle image rotating prism is a given working distance, the first end surface is imaged at the left side of the camera sensor after being rotated by the third right-angle image rotating prism, the first right-angle image rotating prism and the image combining prism; when the semiconductor crystal grain moves to the right side of the detection device, and the distance between the second end surface of the semiconductor crystal grain and the fourth right-angle relay prism is a given working distance, the second end surface forms an image on the right side of the camera sensor after being relayed by the fourth right-angle relay prism, the second right-angle relay prism and the image combination prism.
In one embodiment, glass optical wedges are respectively arranged between the first right-angle rotating image prism, the second right-angle rotating image prism and the image combination prism, and the two glass optical wedges are symmetrically arranged, so that the optical axis of a semiconductor crystal grain is refracted to generate a certain angle deflection, and the purpose of converting the imaging of an off-axis object into the imaging of an on-axis object is realized; when the semiconductor crystal grain is positioned at the left side of the detection device, and the distance between the first end surface of the semiconductor crystal grain and the third right-angle relay prism is a given working distance, the first end surface forms an image on the left side of the camera sensor after being subjected to image conversion through the third right-angle relay prism, the first right-angle relay prism and the image combination prism; when the semiconductor crystal grain moves to the right side of the detection device, and the distance between the second end surface of the semiconductor crystal grain and the fourth right-angle relay prism is a given working distance, the second end surface forms an image on the right side of the camera sensor after being relayed by the fourth right-angle relay prism, the second right-angle relay prism and the image combination prism;
the glass optical wedge is a right-angled triangle, one right-angle side of the glass optical wedge is parallel to the optical axis, the inclined plane faces the image combining prism, and the right-angle side and the inclined plane have intervals with the first right-angle rotating image prism, the second right-angle rotating image prism and the image combining prism.
Or the glass optical wedges are integrally connected to the first right-angle sides of the first right-angle rotating image prism and the second right-angle rotating image prism, and the inclined planes are spaced from the image combination prism. From the above description of the structure of the present invention, compared with the prior art, the present invention has the following advantages:
1. the utility model discloses third, fourth right angle reprint prism that detection device used installs in the top that glass carried thing carousel and semiconductor crystalline grain, need not with semiconductor crystalline grain surface contact, and can not produce with glass carries the thing carousel and interfere, can realize the dynamic detection of semiconductor crystalline grain preceding, back both ends face on the advancing direction.
2. The utility model provides a preceding, back both ends face formation of image detection device in advancing direction has realized the detection that a detection station is arranged in detecting the object advancing direction in the motion preceding, back both ends face through using two sets of commentaries on classics like prism subassembly and close like the prism, has reduced the requirement to imaging lens visual field size, but effective control detection device's cost.
3. The utility model discloses detection device can add the station of 4 sides of other two detection objects, can realize accomplishing six simultaneous formation of image detections of object on a sieve separator, effectively reduces and leaks to examine the proportion.
Drawings
FIGS. 1 and 2 are schematic views of the structure of an optical device for detecting two opposite surfaces of a semiconductor die in the prior art;
FIG. 3 is a schematic diagram of an optical device for detecting adjacent surfaces of a semiconductor die in the prior art;
fig. 4 is a schematic structural diagram of an embodiment of the present invention (i.e., a case where a right-angle side of the third right-angle relay prism and a right-angle relay prism is perpendicular to an optical axis of the telecentric imaging lens);
fig. 5 is a schematic structural diagram of another embodiment of the present invention (i.e., the third right-angle relay prism and the fourth right-angle relay prism are rotated by an angle with their inclined surfaces facing the optical axis);
fig. 6 is a schematic structural view of another embodiment of the apparatus of the present invention (i.e. in the case where glass optical wedges are respectively disposed between the first right-angle relay prism, the second right-angle relay prism and the image combining prism);
fig. 7 is a schematic structural diagram of another embodiment of the apparatus of the present invention (i.e., a case where a glass optical wedge is integrally connected to a right-angle edge of the first right-angle relay prism and the second right-angle relay prism);
FIG. 8 is a schematic diagram of a portion of the embodiment of FIG. 5;
fig. 9 is an end face image experimentally acquired by the semiconductor die two-end-face imaging detection apparatus of the present application;
fig. 10 is a partial view of fig. 4.
Detailed Description
The present application will be described in detail below with reference to the embodiments with reference to the attached drawings.
As shown in fig. 4-10, the utility model discloses realize the device that the formation of image of both ends face detected around on the semiconductor crystalline grain advancing direction camera 1, telecentric imaging lens 2, close like prism 3, first group of relay prism subassembly 4, second group relay prism subassembly 5, semiconductor crystalline grain 6 and the glass that sets gradually on optical path direction of optical device carry thing carousel 7, close like prism 3 and be located telecentric imaging lens 2 optical axis a, the preferred close like prism 3 is symmetrical about optical axis a.
The camera 1 may be a CCD or CMOS camera, the semiconductor crystal grain 6 is usually a rectangular parallelepiped or square semiconductor crystal grain, and is placed on a glass carrier disk 7 as an object to be measured, the glass carrier disk 7 is rotated by a driving device, so that the semiconductor crystal grain 6 rotates circumferentially on the glass carrier disk 7, but the glass carrier disk 7 may also be a linearly moving glass table.
Wherein first group changes like prism subassembly 4 for the symmetry sets up first right angle commentaries on classics like prism 4a and second right angle commentaries on classics like prism 4b at the 3 both sides of image-combining prism, first right angle commentaries on classics like prism 4a and the first right angle 401 of second right angle commentaries on classics like prism 4b are on a parallel with telecentric imaging lens 2 optical axes, the second right angle 402 perpendicular to telecentric imaging lens's of first right angle commentaries on classics like prism and second right angle commentaries on classics like prism optical axis, inclined plane 403 is far away from telecentric imaging lens 2 optical axes and forms 45 degrees contained angles with the optical axis.
The second set of relay prism assembly 5 is a third right-angle relay prism 5a and a fourth right-angle relay prism 5b which are symmetrically arranged below the first set of relay prism assembly 4, a first right-angle side 501 of the third right-angle relay prism 5a and the fourth right-angle relay prism 5b is far away from the optical axis of the telecentric imaging lens, a second right-angle side 502 of the third right-angle relay prism and the fourth right-angle relay prism is close to a second right-angle side of the first right-angle relay prism or the second right-angle relay prism, and an inclined plane 503 of the third right-angle relay prism and the fourth right-angle relay prism is close to the optical axis of the telecentric imaging lens;
as shown in fig. 4, in an embodiment, the first right-angle side 501 of the third right-angle relay prism and the fourth right-angle relay prism is parallel to the optical axis a of the telecentric imaging lens, the second right-angle side 502 is perpendicular to the optical axis of the telecentric imaging lens, and the inclined surface 503 faces the optical axis of the telecentric imaging lens and forms an angle of 45 degrees with the optical axis of the telecentric imaging lens.
The semiconductor crystal grain 6 is supported by the glass carrying turntable 7 and rotates along with the glass carrying turntable, and moves in the direction which is under the second group of rotating prism components 5 and is vertical to the optical axis A, and the front end surface and the rear end surface of the semiconductor crystal grain in the advancing direction, namely the first end surface 6a and the second end surface 6b of the semiconductor crystal grain, are parallel to the optical axis A of the telecentric imaging lens.
When the semiconductor die 6 is moved to the left of the inspection apparatus and the distance between the first end surface 6a and the third right-angle relay prism 5a is a predetermined working distance WD at the start of the inspection (as shown in fig. 4), the first end surface 6a is transferred through the third right-angle relay prism 5a, the first right-angle relay prism 4a and the image-combining prism 3a and imaged on the sensor of the camera 1; when the semiconductor crystal grain 6 moves to the right side of the detection device, the distance from the second end face 6b to the fourth right-angle image rotating prism 5b is a given working distance WD, the second end face 6b is imaged in another area on the sensor of the camera 1 after being rotated by the fourth right-angle image rotating prism 5b, the second right-angle image rotating prism 4b and the image combining prism 3b, and clear images can be obtained by debugging the WD distance, the working distance of an imaging lens, the focal length of the camera and the like according to the sizes of different semiconductor crystal grains, so that the imaging detection of the first end face and the second end face of the semiconductor crystal grain 6 can share one optical detection station, and the same semiconductor crystal grain 6 moving on the glass carrying turntable 7 can be imaged at two end faces sequentially at different imaging time points.
During the detection process, only one end face of one semiconductor crystal grain (the right end face of the left semiconductor crystal grain of the detection device or the left end face of the right semiconductor crystal grain of the detection device) is subjected to imaging detection at a certain time point, if the end faces of two semiconductor crystal grains meet the imaging condition at a certain working distance at the same time point, simultaneous imaging detection of the two end faces of the two semiconductor crystal grains can be obtained on a sensor of a camera, and imaging detection of the two end faces of the two semiconductor crystal grains is realized by splitting and splicing the detected front and back images (namely, the right imaging in the front image is intercepted, the left imaging in the back image is spliced, and the two imaging is spliced to form the imaging of the front and back end faces in the advancing direction of one semiconductor crystal grain).
Because the semiconductor crystal grain 6 of the detection device is positioned in the off-axis area of the imaging system, the imaging of the end face can be obtained only by using the lens with a larger view field, thereby increasing the complexity of the detection device, improving the cost of the camera in the detection device, and reducing the side part of the camera in order to reduce the requirement on the size of the view field of the telecentric imaging lens 2, as shown in fig. 5, the inclined planes of the third right-angle transfer prism and the fourth right-angle transfer prism rotate by an angle theta (which can be 3 degrees), so that the inclined planes of the third right-angle transfer prism and the fourth right-angle transfer prism and the optical axis of the telecentric imaging lens form an included angle of 45-theta (which is 42 degrees), thereby satisfying the condition that the imaging of the off-axis object is converted into the imaging of the on-axis object, and other constructions are the same as the construction of fig. 4 except the above contents; the distance WD2 between the lower ends of the third and fourth quarter-turn prisms and the upper surface of the semiconductor die 6 may be 1.1mm, and the distance WD1 between the lower ends of the third and fourth quarter-turn prisms and the end surface of the semiconductor die 6 may be 65mm (as shown in fig. 8).
When the embodiment is in operation, when the semiconductor die 6 is located on the left side of the detection device and the first end face 6a is at a given working distance WD away from the third right-angle rotating prism 5a, the first end face 6a is rotated by the third right-angle rotating prism 5a, the first right-angle rotating prism 4a and the image combining prism 3a and then imaged on the left side of the sensor of the camera 1; when the semiconductor die 6 moves to the right side of the detection device, and the distance from the second end surface 6b to the fourth right-angle relay prism 5b is a given working distance WD, the second end surface 6b is imaged on the right side of the sensor of the camera 1 after being relayed by the fourth right-angle relay prism 5b, the second right-angle relay prism 4b and the image-combining prism 3b, so as to achieve the effect of reducing the imaging field of view.
In another embodiment of the present invention, as shown in fig. 6 and 7, glass optical wedges are respectively disposed between the first right-angle relay prism 4a, the second right-angle relay prism 4b and the image combining prism 3, and the two glass optical wedges 8a and 8b are symmetrically disposed, so that the optical axis refraction of the semiconductor crystal grain 6 generates a certain angle deflection, and the off-axis object imaging conversion into the on-axis object imaging is realized; fig. 6 and 7 show two configurations of glass wedges, one embodiment of which is shown in fig. 6, wherein the glass wedges are right triangles with their sides parallel to the optical axis and their sides facing the image combining prism, and the sides and sides are spaced from the first right-angle relay prism, the second right-angle relay prism and the image combining prism, and another embodiment of which the glass wedges are integrally connected to the first sides of the first right-angle relay prism and the second right-angle relay prism, and their sides are spaced from the image combining prism.
In this embodiment, two glass wedges 8a and 8b are integrally connected to the right-angle sides of the first right-angle relay prism 4a and the second right-angle relay prism 4b parallel to the optical axis of the telecentric imaging lens 2 (as shown in fig. 7), the semiconductor crystal grain 6 is located on the left side of the detection device, and when the distance between the first end surface 6a and the third right-angle relay prism 5a is the given working distance WD, the first end surface 6a is imaged on the left side of the sensor of the camera 1 after being transferred by the third right-angle relay prism 5a, the first right-angle relay prism 4a, the glass wedge 8 and the image-combining prism 3 a; when the semiconductor crystal grain 6 moves to the right side of the detection device, and the distance from the second end face 6b to the fourth right-angle relay prism 5b is a given working distance WD, the second end face 6b is imaged on the right side of the sensor of the camera 1 after being relayed by the fourth right-angle relay prism 5b, the second right-angle relay prism 4b, the glass optical wedge 8 and the image-combining prism 3b, so as to achieve the effect of reducing the imaging field of view.
In the above embodiments, the image-combining prism 3 is rectangular, and can be made of a single prism or formed by symmetrically bonding and combining two small blocks (the middle part needs to have a total reflection surface); the top surface of the image-combining prism 3 close to the camera 1 is a plane of imaging output and is vertical to the optical axis of the telecentric imaging lens 2, and the left plane and the right plane of the image-combining prism 3 are imaging input surfaces parallel to the optical axis of the telecentric imaging lens 2 respectively; the image combining prism 3 is far away from the camera 1, the centers of the bottom surfaces perpendicular to the optical axis are total reflection surfaces which form 90 degrees with each other, the total reflection surfaces form a V-shaped groove, the size of the image combining prism 3 is 20x10x20mm, the width of the opening of the V-shaped groove on the bottom surface is 8-12mm, and the right-angle side lengths of the first, second, third and fourth right-angle rotating image prisms 4a, 4b, 5a and 5b can be 10-25mm.
In the using process, the distance between the images of the two end surfaces of the semiconductor crystal grain 6 and the center of the imaging sensor of the camera 1 can be adjusted by adjusting the position of the image synthesis prism 3 up and down, so that an off-axis object is imaged to a central area close to the visual field of the camera 1.
The detection device can be added with an optical detection device for aplanatism imaging of two opposite surfaces of the semiconductor crystal grain or a screening machine consisting of two stations for detecting 4 side surfaces of a refrigerating crystal grain adjacent surface complete aplanatism confocal imaging detection device for separating images by using a glass optical wedge, can realize simultaneous imaging detection of 6 surfaces of an object on one screening machine, and effectively reduces the missing detection ratio of the semiconductor crystal grain.
It should be finally noted that the above examples are only intended to illustrate the technical solution of the present invention and not to limit it; although the present invention has been described in detail with reference to preferred embodiments, it should be understood by those skilled in the art that: modifications can still be made to the embodiments of the invention or equivalents may be substituted for some of the features; without departing from the spirit of the present invention, it should be understood that the scope of the claims is intended to cover all such modifications and variations.
Claims (7)
1. A device for realizing imaging detection of front and back end faces in the advancing direction of semiconductor crystal grains is characterized in that: a camera, a telecentric imaging lens, an image-combining prism, a first group of relay prism components, a second group of relay prism components, a semiconductor crystal grain and a glass carrying turntable are sequentially arranged in the optical path direction of the device, and the image-combining prism is positioned on the optical axis of the telecentric imaging lens;
the first group of image rotating prism components are a first right-angle image rotating prism and a second right-angle image rotating prism which are symmetrically arranged at two sides of the image merging prism, first right-angle sides of the first right-angle image rotating prism and the second right-angle image rotating prism are parallel to the optical axis of the telecentric imaging lens, second right-angle sides of the first right-angle image rotating prism and the second right-angle image rotating prism are perpendicular to the optical axis of the telecentric imaging lens, and inclined surfaces of the first right-angle image rotating prism and the second right-angle image rotating prism back to the optical axis of the telecentric imaging lens and form a 45-degree included angle with the optical axis of the telecentric imaging lens;
the second group of relay prism components are a third right-angle relay prism and a fourth right-angle relay prism which are symmetrically arranged below the first group of relay prism components; the first right-angle sides of the third right-angle image rotation prism and the fourth right-angle image rotation prism are far away from the optical axis of the telecentric imaging lens, the second right-angle sides of the third right-angle image rotation prism and the fourth right-angle image rotation prism are close to the second right-angle sides of the first right-angle image rotation prism or the second right-angle image rotation prism, and the inclined surfaces of the third right-angle image rotation prism and the fourth right-angle image rotation prism are close to the optical axis of the telecentric imaging lens;
the semiconductor crystal grain is supported by the glass carrying turntable and rotates along with the glass carrying turntable, and moves in the direction which is below the second group of image rotating prism components and vertical to the optical axis, and the front end face and the rear end face of the semiconductor crystal grain in the advancing direction, namely the first end face and the second end face of the semiconductor crystal grain, are parallel to the optical axis of the telecentric imaging lens.
2. The apparatus of claim 1, wherein the front and back end faces of the semiconductor die in the direction of travel are inspected by imaging means, further comprising: the first right-angle sides of the third right-angle image rotating prism and the fourth right-angle image rotating prism are parallel to the optical axis of the telecentric imaging lens, the second right-angle sides are perpendicular to the optical axis of the telecentric imaging lens, and the inclined planes face the optical axis of the telecentric imaging lens and form a 45-degree included angle with the optical axis of the telecentric imaging lens.
3. The device of claim 1, wherein the front and back end faces of the semiconductor die in the direction of travel are imaged and inspected, and the device further comprises: and the third right-angle image rotating prism and the fourth right-angle image rotating prism rotate by an angle theta, so that the inclined surfaces of the third right-angle image rotating prism and the fourth right-angle image rotating prism and the optical axis of the telecentric imaging lens form an included angle of 45-theta.
4. The apparatus according to claim 1 or 2, wherein the apparatus comprises: glass optical wedges are respectively arranged among the first right-angle rotating image prism, the second right-angle rotating image prism and the image combination prism, and the two glass optical wedges are symmetrically arranged to enable the optical axis of the semiconductor crystal grain to be refracted to generate certain angle deflection.
5. The apparatus of claim 4, wherein the front and back end faces of the semiconductor die in the direction of travel are inspected by imaging means, further comprising: the glass optical wedge is a right-angled triangle, one right-angled side of the glass optical wedge is parallel to the optical axis, the inclined plane faces the image-combining prism, and the right-angled side and the inclined plane have intervals with the first right-angled image-rotating prism, the second right-angled image-rotating prism and the image-combining prism.
6. The apparatus of claim 4, wherein the front and back end faces of the semiconductor die in the direction of travel are inspected by imaging means, further comprising: the glass optical wedges are integrally connected to the first right-angle sides of the first right-angle image rotating prism and the second right-angle image rotating prism, and the inclined planes are spaced from the image combining prism.
7. The apparatus for realizing imaging detection of front and back end faces in the advancing direction of a semiconductor die according to claim 1, 2, 3, 5 or 6, wherein: the image combination prism is rectangular, the top surface of the image combination prism close to the camera is a plane for imaging output and is vertical to the optical axis of the telecentric imaging lens, and the left plane and the right plane of the image combination prism are imaging input surfaces parallel to the optical axis of the telecentric imaging lens respectively; the image combination prism is far away from the camera, the middle of the bottom surface perpendicular to the optical axis is provided with total reflection surfaces which form an angle of 90 degrees with each other, and the total reflection surfaces form a V-shaped groove.
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