CN114586181A - 光电探测器 - Google Patents
光电探测器 Download PDFInfo
- Publication number
- CN114586181A CN114586181A CN202080045598.XA CN202080045598A CN114586181A CN 114586181 A CN114586181 A CN 114586181A CN 202080045598 A CN202080045598 A CN 202080045598A CN 114586181 A CN114586181 A CN 114586181A
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- photodetector
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/191—Photoconductor image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
- H10F39/8033—Photosensitive area
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/06—Systems determining position data of a target
- G01S17/08—Systems determining position data of a target for measuring distance only
- G01S17/10—Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/06—Systems determining position data of a target
- G01S17/08—Systems determining position data of a target for measuring distance only
- G01S17/32—Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/88—Lidar systems specially adapted for specific applications
- G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
- G01S17/894—Three-dimensional [3D] imaging with simultaneous measurement of time-of-flight at a two-dimensional [2D] array of receiver pixels, e.g. time-of-flight cameras or flash lidar
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/483—Details of pulse systems
- G01S7/486—Receivers
- G01S7/4861—Circuits for detection, sampling, integration or read-out
- G01S7/4863—Detector arrays, e.g. charge-transfer gates
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/491—Details of non-pulse systems
- G01S7/4912—Receivers
- G01S7/4913—Circuits for detection, sampling, integration or read-out
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/186—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors having arrangements for blooming suppression
- H10F39/1865—Overflow drain structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
- H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8057—Optical shielding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/807—Pixel isolation structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/809—Constructional details of image sensors of hybrid image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/06—Systems determining position data of a target
- G01S17/08—Systems determining position data of a target for measuring distance only
- G01S17/32—Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated
- G01S17/36—Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated with phase comparison between the received signal and the contemporaneously transmitted signal
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8067—Reflectors
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Computer Networks & Wireless Communication (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201962873481P | 2019-07-12 | 2019-07-12 | |
| US62/873,481 | 2019-07-12 | ||
| US201962880451P | 2019-07-30 | 2019-07-30 | |
| US201962880211P | 2019-07-30 | 2019-07-30 | |
| US62/880,451 | 2019-07-30 | ||
| US62/880,211 | 2019-07-30 | ||
| PCT/JP2020/014625 WO2021009978A1 (ja) | 2019-07-12 | 2020-03-30 | 光検出装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114586181A true CN114586181A (zh) | 2022-06-03 |
Family
ID=74210374
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202080045598.XA Pending CN114586181A (zh) | 2019-07-12 | 2020-03-30 | 光电探测器 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20220359584A1 (https=) |
| EP (1) | EP3998642A4 (https=) |
| JP (1) | JPWO2021009978A1 (https=) |
| KR (1) | KR20220030948A (https=) |
| CN (1) | CN114586181A (https=) |
| TW (1) | TW202103311A (https=) |
| WO (1) | WO2021009978A1 (https=) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102020124766A1 (de) * | 2019-09-30 | 2021-04-01 | Taiwan Semiconductor Manufacturing Co. Ltd. | Eingebettete lichtabschirmungsstruktur für cmos-bildsensor |
| US12021099B2 (en) * | 2019-09-30 | 2024-06-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Embedded light shield structure for CMOS image sensor |
| US11699688B2 (en) * | 2019-12-03 | 2023-07-11 | Nichia Corporation | Surface-emitting light source and method of manufacturing the same |
| WO2021149506A1 (ja) * | 2020-01-20 | 2021-07-29 | ソニーセミコンダクタソリューションズ株式会社 | 時間計測装置、時間計測方法及び測距装置 |
| KR102824308B1 (ko) * | 2020-07-07 | 2025-06-25 | 삼성전자주식회사 | 이미지 센서 |
| US11735677B2 (en) * | 2020-07-20 | 2023-08-22 | ActLight SA | Photodetectors and photodetector arrays |
| CN117295969A (zh) | 2021-05-06 | 2023-12-26 | 三菱电机株式会社 | 测距装置、测距方法以及测距程序 |
| US20240069161A1 (en) * | 2022-01-05 | 2024-02-29 | Luminar, Llc | Lidar systems with wavelength-turntable light source |
| US20240151875A1 (en) * | 2022-11-07 | 2024-05-09 | Visera Technologies Company Limited | Optical device |
| CN115911139B (zh) * | 2022-11-29 | 2023-10-27 | 山东中科际联光电集成技术研究院有限公司 | 抗过载光接收组件 |
| WO2024123921A2 (en) * | 2022-12-06 | 2024-06-13 | Guardion, Inc. | Charge sensor |
| WO2025069370A1 (ja) * | 2023-09-29 | 2025-04-03 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置 |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09331051A (ja) * | 1995-06-16 | 1997-12-22 | S I I R D Center:Kk | 光電変換半導体装置 |
| JP2006210919A (ja) * | 2005-01-24 | 2006-08-10 | Samsung Electronics Co Ltd | 光の波長に応じて異なる厚さの埋没バリヤ層を具備するイメージセンサ及びその形成方法 |
| CN102169883A (zh) * | 2010-01-27 | 2011-08-31 | 索尼公司 | 固态成像装置及其制造方法、电子设备 |
| CN102208427A (zh) * | 2010-03-31 | 2011-10-05 | 索尼公司 | 固体摄像器件、用于制造固体摄像器件的方法和电子设备 |
| CN102460763A (zh) * | 2009-05-19 | 2012-05-16 | 海利泰科公司 | 半导体组件 |
| WO2014021115A1 (ja) * | 2012-07-30 | 2014-02-06 | ソニー株式会社 | 固体撮像装置、固体撮像装置の製造方法及び電子機器 |
| JP2016066766A (ja) * | 2014-09-26 | 2016-04-28 | ソニー株式会社 | 固体撮像装置、および電子装置 |
| JP2018088488A (ja) * | 2016-11-29 | 2018-06-07 | ソニーセミコンダクタソリューションズ株式会社 | センサチップおよび電子機器 |
| JP2018190797A (ja) * | 2017-04-28 | 2018-11-29 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子および電子機器 |
| CN109155325A (zh) * | 2017-03-22 | 2019-01-04 | 索尼半导体解决方案公司 | 摄像装置和信号处理装置 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2396325C (en) * | 2001-09-06 | 2010-03-30 | Sumitomo Electric Industries, Ltd. | Zn1-xmgxsyse1-y pin photodiode and zn1-xmgxsyse1-y avalanche-photodiode |
| US7768085B2 (en) * | 2005-10-11 | 2010-08-03 | Icemos Technology Ltd. | Photodetector array using isolation diffusions as crosstalk inhibitors between adjacent photodiodes |
| JP4607773B2 (ja) * | 2006-01-19 | 2011-01-05 | 富士フイルム株式会社 | 撮像素子および撮像システム |
| JP6299058B2 (ja) * | 2011-03-02 | 2018-03-28 | ソニー株式会社 | 固体撮像装置、固体撮像装置の製造方法及び電子機器 |
| US20130334639A1 (en) * | 2012-06-18 | 2013-12-19 | Aeroflex Colorado Springs Inc. | Photodiode with reduced dead-layer region |
| US9160949B2 (en) * | 2013-04-01 | 2015-10-13 | Omnivision Technologies, Inc. | Enhanced photon detection device with biased deep trench isolation |
| US10522582B2 (en) * | 2015-10-05 | 2019-12-31 | Sony Semiconductor Solutions Corporation | Imaging apparatus |
| JP2017175102A (ja) * | 2016-03-16 | 2017-09-28 | ソニー株式会社 | 光電変換素子及びその製造方法並びに撮像装置 |
| WO2018167567A1 (en) | 2017-03-17 | 2018-09-20 | ActLight SA | Photo detector systems and methods of operating same |
| WO2018193747A1 (en) * | 2017-04-19 | 2018-10-25 | Sony Semiconductor Solutions Corporation | Semiconductor device, method of manufacturing the same, and electronic apparatus |
| US10636930B2 (en) * | 2017-09-29 | 2020-04-28 | Taiwan Semiconductor Manufacturing Company Ltd. | SPAD image sensor and associated fabricating method |
| US10204950B1 (en) * | 2017-09-29 | 2019-02-12 | Taiwan Semiconductor Manufacturing Company Ltd. | SPAD image sensor and associated fabricating method |
-
2020
- 2020-03-30 JP JP2021532677A patent/JPWO2021009978A1/ja active Pending
- 2020-03-30 CN CN202080045598.XA patent/CN114586181A/zh active Pending
- 2020-03-30 KR KR1020217042712A patent/KR20220030948A/ko not_active Abandoned
- 2020-03-30 US US17/624,890 patent/US20220359584A1/en active Pending
- 2020-03-30 WO PCT/JP2020/014625 patent/WO2021009978A1/ja not_active Ceased
- 2020-03-30 EP EP20840851.8A patent/EP3998642A4/en not_active Withdrawn
- 2020-03-31 TW TW109111091A patent/TW202103311A/zh unknown
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09331051A (ja) * | 1995-06-16 | 1997-12-22 | S I I R D Center:Kk | 光電変換半導体装置 |
| JP2006210919A (ja) * | 2005-01-24 | 2006-08-10 | Samsung Electronics Co Ltd | 光の波長に応じて異なる厚さの埋没バリヤ層を具備するイメージセンサ及びその形成方法 |
| CN102460763A (zh) * | 2009-05-19 | 2012-05-16 | 海利泰科公司 | 半导体组件 |
| CN102169883A (zh) * | 2010-01-27 | 2011-08-31 | 索尼公司 | 固态成像装置及其制造方法、电子设备 |
| CN102208427A (zh) * | 2010-03-31 | 2011-10-05 | 索尼公司 | 固体摄像器件、用于制造固体摄像器件的方法和电子设备 |
| WO2014021115A1 (ja) * | 2012-07-30 | 2014-02-06 | ソニー株式会社 | 固体撮像装置、固体撮像装置の製造方法及び電子機器 |
| JP2016066766A (ja) * | 2014-09-26 | 2016-04-28 | ソニー株式会社 | 固体撮像装置、および電子装置 |
| JP2018088488A (ja) * | 2016-11-29 | 2018-06-07 | ソニーセミコンダクタソリューションズ株式会社 | センサチップおよび電子機器 |
| CN109155325A (zh) * | 2017-03-22 | 2019-01-04 | 索尼半导体解决方案公司 | 摄像装置和信号处理装置 |
| JP2018190797A (ja) * | 2017-04-28 | 2018-11-29 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子および電子機器 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP3998642A4 (en) | 2022-09-21 |
| US20220359584A1 (en) | 2022-11-10 |
| KR20220030948A (ko) | 2022-03-11 |
| EP3998642A1 (en) | 2022-05-18 |
| WO2021009978A1 (ja) | 2021-01-21 |
| JPWO2021009978A1 (https=) | 2021-01-21 |
| TW202103311A (zh) | 2021-01-16 |
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