CN114551610A - 一种太阳能电池、电极结构、电池组件、发电系统及制备方法 - Google Patents
一种太阳能电池、电极结构、电池组件、发电系统及制备方法 Download PDFInfo
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- CN114551610A CN114551610A CN202210239656.3A CN202210239656A CN114551610A CN 114551610 A CN114551610 A CN 114551610A CN 202210239656 A CN202210239656 A CN 202210239656A CN 114551610 A CN114551610 A CN 114551610A
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
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- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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Abstract
Description
金属 | Ag | Cu |
体电阻率(ohm.cm) | 1.60E-06 | 1.70E-06 |
价格(元/吨) | 5101000 | 70970 |
材料 | 硅与材料界面850-1200nm波段平均反射率模拟结果(%) | 价格(元/吨) | 短路电流模拟结果(mA/cm2) |
Ag | 96.6 | 5,101,000 | 42.18 |
Al | 80.7 | 22,800 | 42.04 |
Cu | 91.6 | 70,970 | 42.09 |
Mg | 80.2 | 50,800 | 41.91 |
Cr | 22.3 | 67,100 | 41.17 |
Mo | 33.2 | 370,000 | 41.29 |
Ni | 38.8 | 180,200 | 41.35 |
Sn | 51.9 | 339,000 | 41.52 |
Ti | 18.1 | 80,000 | 41.17 |
W | 21.6 | 171,500 | 41.20 |
W含量比例(%) | 电池短路电流(Jsc/cm2) |
100 | 40.8 |
90 | 40.92 |
80 | 41.04 |
70 | 41.16 |
60 | 41.28 |
50 | 41.4 |
40 | 41.52 |
30 | 41.64 |
20 | 41.76 |
10 | 41.88 |
0 | 42.00 |
电极技术 | 焊接拉力(N/mm) |
常规Ag电极 | 1.3 |
Al+Cu电极 | 0.2 |
Al+TiW+Cu电极 | 0.5 |
本专利中Al合金+Cu电极 | 1.7 |
Claims (23)
Priority Applications (4)
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CN202210239656.3A CN114551610B (zh) | 2022-03-11 | 2022-03-11 | 一种太阳能电池、电极结构、电池组件、发电系统及制备方法 |
NL2034304A NL2034304B1 (en) | 2022-03-11 | 2023-03-09 | Solar Cell, Electrode Structure, Cell Module, Power Generation System and Preparation Method |
DE202023101152.7U DE202023101152U1 (de) | 2022-03-11 | 2023-03-10 | Solarzelle, Elektrodenstruktur, Batteriemodul und Stromerzeugungssystem |
PCT/CN2023/081171 WO2023169585A1 (zh) | 2022-03-11 | 2023-03-13 | 太阳能电池、电极结构、电池组件、发电系统及制备方法 |
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CN (1) | CN114551610B (zh) |
DE (1) | DE202023101152U1 (zh) |
NL (1) | NL2034304B1 (zh) |
WO (1) | WO2023169585A1 (zh) |
Cited By (1)
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WO2023169585A1 (zh) * | 2022-03-11 | 2023-09-14 | 浙江爱旭太阳能科技有限公司 | 太阳能电池、电极结构、电池组件、发电系统及制备方法 |
Citations (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040200520A1 (en) * | 2003-04-10 | 2004-10-14 | Sunpower Corporation | Metal contact structure for solar cell and method of manufacture |
KR20100096819A (ko) * | 2009-02-25 | 2010-09-02 | 엘지전자 주식회사 | 후면전극형 태양전지 및 그 제조방법 |
EP2387079A2 (en) * | 2010-05-14 | 2011-11-16 | Sierra Solar Power, Inc. | Solar cell with metal grid |
WO2012020682A1 (ja) * | 2010-08-09 | 2012-02-16 | 株式会社カネカ | 結晶シリコン系太陽電池 |
CN103107212A (zh) * | 2013-02-01 | 2013-05-15 | 中国科学院上海微系统与信息技术研究所 | 具有电镀电极的异质结太阳电池及制备方法 |
WO2013129578A1 (ja) * | 2012-02-28 | 2013-09-06 | 京セラ株式会社 | 太陽電池の電極用導電性ペースト、太陽電池および太陽電池の製造方法 |
WO2014098016A1 (ja) * | 2012-12-18 | 2014-06-26 | PVG Solutions株式会社 | 太陽電池セル及びその製造方法 |
US20140251423A1 (en) * | 2013-03-06 | 2014-09-11 | Lg Electronics Inc. | Solar cell and method of manufacturing the same |
JP2014229712A (ja) * | 2013-05-21 | 2014-12-08 | 株式会社カネカ | 太陽電池およびその製造方法、ならびに太陽電池モジュール |
JP2014229876A (ja) * | 2013-05-27 | 2014-12-08 | 株式会社カネカ | 結晶シリコン系太陽電池およびその製造方法、ならびに太陽電池モジュール |
JP2014232820A (ja) * | 2013-05-29 | 2014-12-11 | 株式会社カネカ | 太陽電池およびその製造方法、ならびに太陽電池モジュール |
JP2014232821A (ja) * | 2013-05-29 | 2014-12-11 | 株式会社カネカ | 太陽電池およびその製造方法、ならびに太陽電池モジュール |
CN104362216A (zh) * | 2014-10-23 | 2015-02-18 | 云南大学 | 一种晶体硅太阳能电池前栅线电极的制备方法 |
WO2015081077A1 (en) * | 2013-11-26 | 2015-06-04 | Arizona Board Of Regents On Behalf Of Arizona State University | Solar cells formed via aluminum electroplating |
KR20150066131A (ko) * | 2013-12-06 | 2015-06-16 | 엘지전자 주식회사 | 이종 접합 태양 전지 및 이의 제조 방법 |
WO2016109909A1 (zh) * | 2015-01-05 | 2016-07-14 | 苏州中来光伏新材股份有限公司 | 无主栅高效率背接触太阳能电池、组件及其制备工艺 |
CN106328743A (zh) * | 2016-10-28 | 2017-01-11 | 倪明仿 | 柔性光伏电池组件及制备方法 |
CN106409954A (zh) * | 2016-10-28 | 2017-02-15 | 倪明仿 | 柔性光伏电池产品及制备方法 |
WO2017100800A1 (en) * | 2015-12-10 | 2017-06-15 | Beamreach Solar, Inc. | Rear contact and infrared mirror structures and manufacturing methods for back contact solar cells |
CN108400175A (zh) * | 2018-01-24 | 2018-08-14 | 苏州太阳井新能源有限公司 | 一种具有电镀电极的异质结太阳能电池及制备方法 |
JP2019057701A (ja) * | 2017-09-20 | 2019-04-11 | 株式会社東芝 | 太陽電池、多接合型太陽電池、太陽電池モジュール、太陽光発電システム及び太陽電池の製造方法 |
CN110137278A (zh) * | 2019-04-11 | 2019-08-16 | 西南石油大学 | 原位还原制备电镀种子层的异质结太阳电池及其制备方法 |
JP2020053669A (ja) * | 2018-09-19 | 2020-04-02 | 株式会社東芝 | 太陽電池、多接合型太陽電池、太陽電池モジュール及び太陽光発電システム |
JP2020053668A (ja) * | 2018-09-19 | 2020-04-02 | 株式会社東芝 | 太陽電池、多接合型太陽電池、太陽電池モジュール及び太陽光発電システム |
CN113066897A (zh) * | 2021-03-18 | 2021-07-02 | 西南石油大学 | 一种异质结太阳电池铜电极的无掩膜制备方法 |
CN113380902A (zh) * | 2021-06-08 | 2021-09-10 | 常州捷佳创精密机械有限公司 | 单晶硅异质结太阳能电池和太阳能电池的制作方法 |
CN113823701A (zh) * | 2021-09-29 | 2021-12-21 | 西南石油大学 | 双面发电的异质结太阳电池的电极设计及电池互联方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10014425B2 (en) * | 2012-09-28 | 2018-07-03 | Sunpower Corporation | Spacer formation in a solar cell using oxygen ion implantation |
TW201442260A (zh) * | 2013-04-23 | 2014-11-01 | Topcell Solar Internat Co Ltd | 太陽能電池及其製造方法 |
KR101622090B1 (ko) * | 2013-11-08 | 2016-05-18 | 엘지전자 주식회사 | 태양 전지 |
KR101620431B1 (ko) * | 2014-01-29 | 2016-05-12 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
KR101661948B1 (ko) * | 2014-04-08 | 2016-10-04 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
JP6436424B2 (ja) * | 2015-03-30 | 2018-12-12 | パナソニックIpマネジメント株式会社 | 太陽電池セルおよび太陽電池セルの製造方法 |
CN109148616B (zh) * | 2017-06-16 | 2024-09-13 | 国家电投集团新能源科技有限公司 | 硅异质结太阳电池及其制备方法 |
CN111477694A (zh) * | 2019-01-23 | 2020-07-31 | 福建金石能源有限公司 | 一种背接触异质结太阳能电池及其制作方法 |
CN114551610B (zh) * | 2022-03-11 | 2024-05-31 | 广东爱旭科技有限公司 | 一种太阳能电池、电极结构、电池组件、发电系统及制备方法 |
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- 2023-03-09 NL NL2034304A patent/NL2034304B1/en active
- 2023-03-10 DE DE202023101152.7U patent/DE202023101152U1/de active Active
- 2023-03-13 WO PCT/CN2023/081171 patent/WO2023169585A1/zh unknown
Patent Citations (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040200520A1 (en) * | 2003-04-10 | 2004-10-14 | Sunpower Corporation | Metal contact structure for solar cell and method of manufacture |
KR20100096819A (ko) * | 2009-02-25 | 2010-09-02 | 엘지전자 주식회사 | 후면전극형 태양전지 및 그 제조방법 |
EP2387079A2 (en) * | 2010-05-14 | 2011-11-16 | Sierra Solar Power, Inc. | Solar cell with metal grid |
WO2012020682A1 (ja) * | 2010-08-09 | 2012-02-16 | 株式会社カネカ | 結晶シリコン系太陽電池 |
WO2013129578A1 (ja) * | 2012-02-28 | 2013-09-06 | 京セラ株式会社 | 太陽電池の電極用導電性ペースト、太陽電池および太陽電池の製造方法 |
WO2014098016A1 (ja) * | 2012-12-18 | 2014-06-26 | PVG Solutions株式会社 | 太陽電池セル及びその製造方法 |
CN103107212A (zh) * | 2013-02-01 | 2013-05-15 | 中国科学院上海微系统与信息技术研究所 | 具有电镀电极的异质结太阳电池及制备方法 |
US20140251423A1 (en) * | 2013-03-06 | 2014-09-11 | Lg Electronics Inc. | Solar cell and method of manufacturing the same |
JP2014229712A (ja) * | 2013-05-21 | 2014-12-08 | 株式会社カネカ | 太陽電池およびその製造方法、ならびに太陽電池モジュール |
JP2014229876A (ja) * | 2013-05-27 | 2014-12-08 | 株式会社カネカ | 結晶シリコン系太陽電池およびその製造方法、ならびに太陽電池モジュール |
JP2014232820A (ja) * | 2013-05-29 | 2014-12-11 | 株式会社カネカ | 太陽電池およびその製造方法、ならびに太陽電池モジュール |
JP2014232821A (ja) * | 2013-05-29 | 2014-12-11 | 株式会社カネカ | 太陽電池およびその製造方法、ならびに太陽電池モジュール |
WO2015081077A1 (en) * | 2013-11-26 | 2015-06-04 | Arizona Board Of Regents On Behalf Of Arizona State University | Solar cells formed via aluminum electroplating |
KR20150066131A (ko) * | 2013-12-06 | 2015-06-16 | 엘지전자 주식회사 | 이종 접합 태양 전지 및 이의 제조 방법 |
CN104362216A (zh) * | 2014-10-23 | 2015-02-18 | 云南大学 | 一种晶体硅太阳能电池前栅线电极的制备方法 |
WO2016109909A1 (zh) * | 2015-01-05 | 2016-07-14 | 苏州中来光伏新材股份有限公司 | 无主栅高效率背接触太阳能电池、组件及其制备工艺 |
WO2017100800A1 (en) * | 2015-12-10 | 2017-06-15 | Beamreach Solar, Inc. | Rear contact and infrared mirror structures and manufacturing methods for back contact solar cells |
CN106328743A (zh) * | 2016-10-28 | 2017-01-11 | 倪明仿 | 柔性光伏电池组件及制备方法 |
CN106409954A (zh) * | 2016-10-28 | 2017-02-15 | 倪明仿 | 柔性光伏电池产品及制备方法 |
JP2019057701A (ja) * | 2017-09-20 | 2019-04-11 | 株式会社東芝 | 太陽電池、多接合型太陽電池、太陽電池モジュール、太陽光発電システム及び太陽電池の製造方法 |
CN108400175A (zh) * | 2018-01-24 | 2018-08-14 | 苏州太阳井新能源有限公司 | 一种具有电镀电极的异质结太阳能电池及制备方法 |
JP2020053669A (ja) * | 2018-09-19 | 2020-04-02 | 株式会社東芝 | 太陽電池、多接合型太陽電池、太陽電池モジュール及び太陽光発電システム |
JP2020053668A (ja) * | 2018-09-19 | 2020-04-02 | 株式会社東芝 | 太陽電池、多接合型太陽電池、太陽電池モジュール及び太陽光発電システム |
CN110137278A (zh) * | 2019-04-11 | 2019-08-16 | 西南石油大学 | 原位还原制备电镀种子层的异质结太阳电池及其制备方法 |
CN113066897A (zh) * | 2021-03-18 | 2021-07-02 | 西南石油大学 | 一种异质结太阳电池铜电极的无掩膜制备方法 |
CN113380902A (zh) * | 2021-06-08 | 2021-09-10 | 常州捷佳创精密机械有限公司 | 单晶硅异质结太阳能电池和太阳能电池的制作方法 |
CN113823701A (zh) * | 2021-09-29 | 2021-12-21 | 西南石油大学 | 双面发电的异质结太阳电池的电极设计及电池互联方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023169585A1 (zh) * | 2022-03-11 | 2023-09-14 | 浙江爱旭太阳能科技有限公司 | 太阳能电池、电极结构、电池组件、发电系统及制备方法 |
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