CN113823701A - 双面发电的异质结太阳电池的电极设计及电池互联方法 - Google Patents
双面发电的异质结太阳电池的电极设计及电池互联方法 Download PDFInfo
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Abstract
本发明公开了双面发电的异质结太阳电池的电极设计及电池互联方法,其属于太阳电池技术领域,包括异质结太阳电池衬底;太阳电池入光面丝网印刷银电极;太阳电池背光面电极;太阳电池之间的互联。其特征在于,所述的异质结太阳电池背光面电极,包括:位于透明导电薄膜上的金属种子层,以及依次位于金属种子层上的传导层和焊接层。背光面电极与另一相邻所述异质结太阳电池的入光面电极栅线相连,实现异质结太阳电池的互联导通。双面发电的异质结太阳电池的电极设计及电池互联方法,通过沉积金属叠层来取代原来丝网印刷的Ag背电极,具有低成本制备背电极和实现电池互联的特点。
Description
技术领域
本发明涉及太阳电池技术领域,尤其涉及双面发电的异质结太阳电池的电极设计及电池互联方法。
背景技术
太阳能电池是利用光生伏特效应直接将光能转换为电能的新能源器件,太阳能电池经过串联后进行封装可形成大面积的太阳电池组件。有效提高太阳能电池的光电转换效率、降低生产成本是高效太阳能电池必须要解决的关键问题,也是开拓太阳能实际应用的关键。非晶硅/晶体硅异质结太阳电池具有钝化效果好、无PID衰减、工艺温度低、转换效率高、结构简单且对称、可以双面发电等诸多优点,是未来光伏产业发展的主流电池之一。
目前,硅异质结太阳电池是光伏产业中应用最广泛的器件,产业化一般通过丝网印刷低温银浆制备金属栅线,丝网印刷具有工艺成熟、步骤简单、图形化丰富、易于大规模生产等优点,但随着高效异质结太阳电池的发展,丝网印刷金属电极由于附着性较差、较低的高宽比、较高的线电阻、低温烧结时接触电阻限制了其向高效低成本进一步迈进。另一方面,太阳电池互联也是太阳电池能够光伏发电的重要一环,其对光伏组件的电能输出有着关键影响。现有的太阳电池互联技术存在内部电阻过大、自身互联结构的传输电阻较大等问题。因此,太阳电池之间需要更小的传输距离和更小的传输电阻,在单位面积上可以设置更多的单体太阳电池以提高有效的太阳光利用率。
在太阳电池的正表面和背表面需要制备金属栅线,形成物理上的正负极,从而引出太阳电池光伏效应产生的电流,因此,金属栅线是收集光生电流、影响太阳电池电学性能的关键因素。背面受光弱于正面,产生的光生电流较少,且电极的欧姆损耗较大,为了使异质结太阳电池背面也充分收集光伏效应产生的光生载流子,需要印刷比正面更密集的金属栅线或者整面的背金属电极,于是银浆单耗量无疑增加,而低温银浆浆料的价格昂贵,占据了电池制程30%-40%的非硅成本比例。是以,高效硅异质结太阳电池的金属化降本增效尤为重要。银的电导率为61.35*106S/m,铜的电导率为59.1*106S/m,铜的电导率仅次于银,但其价格只有银的百分之一,是理想的银电极替代材料。
另一方面,由于浆料中Ag颗粒间粘结不紧密,具有较多的空隙,导致其线电阻的提高,串联电阻的增加;而且,银浆料与透明导电薄膜之间的接触存在大量孔洞,造成其金属-半导体接触电阻的增加和栅线附着特性的降低。
发明内容
本发明的目的在于克服现有技术的缺陷,提供双面发电的异质结太阳电池的电极设计及电池互联方法,具体地公开了应用于异质结太阳电池的的叠层金属背光面电极,取代传统的丝网印刷工艺,解决常规技术中存在的异质结太阳电池银浆耗量较大、附着性较差的技术问题,同时实现太阳电池互联结构,进而达到高效率、低成本的目的。
如上构思,本发明所采用的技术方案是:
双面发电的异质结太阳电池的电极设计,其结构包括:
异质结太阳电池衬底;
太阳电池入光面丝网印刷银电极;
太阳电池背光面电极。
所述的所述太阳电池背光面电极,包括:位于透明导电薄膜上的金属种子层,以及依次位于金属种子层上的传导层和焊接层。
所述金属种子层于太阳电池背面的透明导电薄膜上平行间隔分布,呈网栅状。
所述太阳电池背光面电极通过激光转印的方式沉积图形化的金属电极。
所述的金属种子层和焊接层的厚度均为1-1000nm,所述的传导层厚度为1-50μm,所述每片异质结太阳电池上的背光面电极呈网栅状,数量为≥56根。
所述的金属种子层包括以下金属或化合物的一种或几种:镍、钛、钨、钴、铬、钼、锡、铟、铜、铅、钯、硼钛化合物、氮钽化合物、氮钨化合物、氮钛化合物、钨钛化合物、氮硅钛化合物及氮硼钨化合物,所述的金属种子层激光转印的方法进行选择性沉积,形成网栅状金属层分布于透明导电薄膜上。
所述的焊接层位于太阳电池背光面最上层,包括以下金属或其合金中的一种或几种:镍、铬、锡、铟、铜、铝、锌、铅;所述的焊接层只覆盖导电栅线,采用激光转印的方法沉积。
所述的传导层,包括以下金属或其合金中的一种或几种:铜、铝。
用所述激光转印的方法在透明导电薄膜上物理沉积金属栅线电极。
双面发电的异质结太阳电池的互联方法,包括两片异质结太阳电池衬底,通过导电栅线将一片异质结太阳电池的背光面电极与相邻另一片异质结太阳电池的入光面电极相连,所述的相连方法采用焊接方法或热压方法连接固定。
相比传统的的丝网印刷银浆制备电极,本发明的有益效果为:
本发明提出的异质结太阳电池的电极设计及电池互联包括:异质结太阳电池衬底、太阳电池入光面丝网印刷银电极、太阳电池背光面电极。异质结太阳电池入光面采用丝网印刷银电极,在背光面的透明导电薄膜上沉积包括金属种子层、传导层和焊接层的背光面金属电极,替代传统的背光面丝网印刷银电极,较大程度上节省银浆耗量,并解决丝网印刷电极附着特性差、生产节拍长和成本高的问题。
本发明中,具有金属种子层的电极结构内部致密均匀,不会出现明显的空隙,可有效的降低电池在栅线上的损耗,提高电性能;且金属种子层与透明导电薄膜紧密连接,没有明显的孔洞,具有优异的接触性能和附着性。太阳电池组件是将多片太阳电池焊接连通形成,故要求太阳电池主栅线和基底具有较好的附着特性,目前一般要求达到1.5N-2N即可。采用金属种子层的电极结构有助于增大剥离力,其附着特性明显优于丝网印刷低温银电极的附着特性。
附图说明:
图1是本发明提供的异质结太阳电池的电极设计的示意图;
图2是本发明提供的异质结太阳电池的互联结构的示意图。
图中:
1、异质结太阳电池衬底;
101 N型单晶硅衬底
102 本征非晶硅层
103 n型非晶硅层
104 p型非晶硅层
105 透明导电薄膜IWO
106 银电极
2、金属种子层;
3、金属传导层;
4、焊接层;
5、导电栅线。
具体实施方式
下面详细描述本发明的实施例,实施例的示例在附图中示出,其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施例是示例性的,旨在用于解释本发明,而不能理解为对本发明的限制。
对于本领域的普通技术人员而言,可以具体情况理解上述术语在本发明中的具体含义。
在本发明中,除非另有明确的规定和限定,第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触,也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且,第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方,或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方,或仅仅表示第一特征水平高度小于第二特征。
请参阅图1,本发明提供太阳电池电极设计及电池的互联,包括:
异质结太阳电池衬底1;
太阳电池入光面丝网印刷银电极106;
太阳电池背光面电极;
太阳电池之间的互联。
所述的异质结太阳电池背光面电极,包括:
位于透明导电薄膜105上的金属种子层2;
位于金属种子层2上的金属传导层3;
位于金属传导层3上的焊接层4。
制备所述异质结太阳电池衬底的工艺步骤为:
a.去除N型单晶硅衬底的表面损伤层及表面织构化;
b.沉积本征非晶硅层和n型、p型非晶硅层;
c.沉积透明导电薄膜;
d.制备电极。
制备背光面电极时需先掩膜形成图形化。掩膜材料包括光刻胶、干膜、聚合物、二氧化硅等中的一种或几种的组合。掩膜采用选择性化学腐蚀、光刻、等离子体蚀刻、激光蚀刻等方法制备形成金属栅线的掩膜图形。由于掩膜是绝缘的,故沉积的金属种子层仅在掩膜开口处。
所述金属传导层为铜或铝。所述的金属传导层只在掩膜开口处的金属种子层上制备。所述金属传导层的制备方法可以采用磁控溅射、电镀、物理气相沉积法(PVD)或等离子体增强化学气相沉积法(PECVD)。
于金属传导层上制备焊接层。包括以下金属或其合金中的一种或几种:镍、铬、锡、铟、铜、铝、锌、铅。所述焊接层用于辅助焊接,同时可以用于太阳电池的互联。
下面结合附图并通过具体实施方式来进一步说明本发明的技术方案。
实施例一
本实施例详细叙述了双面发电的异质结太阳电池的电极设计方法。请参阅图1,其中,101-106构成所述异质结太阳电池衬底(1),2-4构成所述的太阳电池背光面电极。
工艺步骤为:
a.用RCA方法清洗N型单晶硅片(101),然后用碱性溶液腐蚀硅片制绒;
b.在硅片两侧用PECVD方法沉积本征非晶硅层(102),厚度为5nm;
c.用PECVD方法沉积n型非晶硅层(103),厚度为10nm;
d.用PECVD方法沉积p型非晶硅层(104),厚度为10nm;
e.分别在n型非晶硅层(103)和p型非晶硅层(104)上用RPD法沉积透明导电薄膜IWO(105),厚度为70nm;
f.在n侧的透明导电薄膜上用丝网印刷银浆的方式制备银电极(106)并烧结,电极厚度为1μm;
g.在p侧的透明导电薄膜上用PVD的方法沉积金属叠层,包括金属种子层(2)、传导层(3),在传导层上采用激光转印的方法沉积焊接层(4),金属种子层和焊接层的厚度分别都为1-1000nm,金属传导层的厚度为1-50μm,三层组成网栅状背光面电极,数量为56根。
采用45°拉力的方法测试结果表明,本发明实施例的背光面电极的剥离力达到了4.23N,而常规的丝网印刷银电极的剥离力为2.31N,本实施例的电极设计不仅具有优良的附着性,且降低了电池金属化成本。
实施例二
本实施例具体叙述了双面异质结太阳电池的互联方法,在前述制备方法基础上,进一步限定工作过程与技术参数,实现互联技术,请参阅图1和图2:
a.采用实施例一的方法制备两片双面异质结太阳电池;
b.将导电栅线(5)固定于异质结太阳电池背光面的电极上,其直接与另一相邻异质结太阳电池的入光面金属栅线上的焊接层(4)相连;所述导电栅线为铜或铝,直径为1-50μm,所述每片异质结太阳电池上的导电栅线数量为≥56根;所述的固定方法为焊接或热压。
本实施例结合实施例一的电极设计方法,采用导电栅线实现双面异质结太阳电池的互联导通,有效增加太阳电池的输出电能。
本发明是基于双面发电的的异质结太阳电池的背光面电极设计,虽然有类似不采用丝网印刷的其他金属网栅设计方法,但本发明同时还直接采用金属栅线实现了太阳电池的互联技术,不仅达到了减少银浆耗量,降低电池生产成本的目的,还提供了新颖的电池互联方法。
以上实施方式只是阐述了本发明的基本原理和特性,本发明不受上述实施方式限制,在不脱离本发明精神和范围的前提下,本发明还有各种变化和改变,这些变化和改变都落入要求保护的本发明范围内。本发明要求保护范围由所附的权利要求书及其等效物界定。
Claims (10)
1.双面发电的异质结太阳电池的电极设计,其特征在于,包括:
异质结太阳电池衬底;
太阳电池入光面丝网印刷银电极;
太阳电池背光面电极。
2.根据权利要求1所述的双面发电的异质结太阳电池的电极设计,其特征在于,所述太阳电池背光面电极,包括:位于透明导电薄膜上的金属种子层,以及依次位于金属种子层上的传导层和焊接层。
3.根据权利要求2所述的双面发电的异质结太阳电池的电极设计,其特征在于,所述金属种子层于太阳电池背面的透明导电薄膜上平行间隔分布,呈网栅状。
4.根据权利要求1所述的双面发电的异质结太阳电池的电极设计,其特征在于,所述太阳电池背光面电极通过激光转印的方式沉积图形化的金属电极。
5.根据权利要求2所述的双面发电的异质结太阳电池的电极设计,其特征在于,所述的金属种子层和焊接层的厚度均为1-1000nm,所述的传导层厚度为1-50μm,所述每片异质结太阳电池上的背光面电极呈网栅状,数量为≥56根。
6.根据权利要求2所述的双面发电的异质结太阳电池的电极设计,其特征在于,所述的金属种子层包括以下金属或化合物的一种或几种:镍、钛、钨、钴、铬、钼、锡、铟、铜、铅、钯、硼钛化合物、氮钽化合物、氮钨化合物、氮钛化合物、钨钛化合物、氮硅钛化合物及氮硼钨化合物,所述的金属种子层激光转印的方法进行选择性沉积,形成网栅状金属层分布于透明导电薄膜上。
7.根据权利要求2所述的双面发电的异质结太阳电池的电极设计,其特征在于,所述的焊接层位于太阳电池背光面最上层,包括以下金属或其合金中的一种或几种:镍、铬、锡、铟、铜、铝、锌、铅;所述的焊接层只覆盖传导层,采用激光转印的方法沉积。
8.根据权利要求1所述的双面发电的异质结太阳电池的电极设计,其特征在于,所述的传导层,包括以下金属或其合金中的一种或几种:铜、铝。
9.根据权利要求4所述的双面发电的异质结太阳电池的电极设计,其特征在于,用所述激光转印的方法在透明导电薄膜上物理沉积金属栅线电极。
10.双面发电的异质结太阳电池的互联方法,其特征在于,包括两片异质结太阳电池衬底,通过导电栅线将一片异质结太阳电池的背光面电极与相邻另一片异质结太阳电池的入光面电极相连,所述的相连方法采用焊接方法或热压方法连接固定。
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