CN114545725B - 利用碳纳米管薄膜作掩模版光罩的制备方法 - Google Patents
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- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
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Abstract
本发明涉及半导体加工技术领域，尤其涉及一种利用碳纳米管薄膜作掩模版光罩的制备方法。主要包括SiN支撑层的制备和在支撑层上生长碳纳米管薄膜。具体包括如下步骤：在基底两侧沉积SiN和SiO2，在SiN上涂覆光刻胶，在光刻胶上进行图案化曝光、显影、刻蚀和去胶，再经刻蚀去除表面SiO2后得到图案化的SiN支撑层，在支撑层上沉积一层碳纳米管薄膜，进一步将支撑层和基底进行刻蚀去除后，得到图案化的碳纳米管掩模版光罩。涉及的掩模版光罩具有高的透光率高，良好的化学稳定性和热稳定性，成本低的特点。
Description
技术领域
本发明涉及一种半导体加工，尤其涉及一种利用碳纳米管薄膜作掩模版光罩的制备方法。
背景技术
为防止光刻机长时间工作时的杂质溅射污染，需要在掩模版前加一层防护罩。防护罩的材料是有非常高的要求的，首先当然是对EUV光有很高的透过率，其次，当EUV光照射到防护罩时，膜的温度会升高至600—1000℃，因此防护材料必须具有高的化学稳定性、热稳定性；当然机械强度也有很高的要求。EUV光刻机如果没有防护罩可能会产生巨大的经济损失。如果颗粒落在掩模上，光刻机可能会在芯片上批量产生缺陷，这会对产量产生负面影响。
目前光刻机使用的极紫外光，固体材料对极紫外光是不透明的，这需要极薄的极紫外薄膜。薄膜会吸收一些入射光和出射光，导致薄膜温度升高。因此，薄膜很容易降解，因为这种加热导致的材料厚度或成分的微小变化就会改变薄膜的机械、物理、化学和光学性能。碳纳米管具有很好物理化学性能，当碳纳米管薄膜暴露在EUV光刻机中，能够很好地保持化学和热稳定性，并且由于碳纳米管在所有检测波长下都是透明的，可以用普通的DUV和光学手段进行检测。
发明内容
本发明旨在解决上述缺陷，提供一种利用碳纳米管薄膜作掩模版光罩的制备方法。
为了克服背景技术中存在的缺陷，本发明解决其技术问题所采用的技术方案是：一种利用碳纳米管薄膜作掩模版光罩的制备方法，该制备方法包括：
第一步、SiN支撑层的制备：
a、在石英玻璃基底或半导体硅基底两侧通过低压化学气相沉积法沉积SiN层，工作环境的压强为10-500Pa，工作环境温度为600-800℃；
b、在基底正面SiN层上干氧氧化沉积一层SiO2保护层，工作环境温度为1000-1200℃；
c、在背面SiN层上涂覆一层光刻胶；
d、在光刻胶层上进行图案化曝光、显影、刻蚀和去胶，基底背面得到图案化的SiN层；
e、再将基底翻转，经氢氟酸刻蚀去除基底正面的SiO2保护层后得到裸露的SiN支撑层；
第二步、在SiN支撑层上生长碳纳米管薄膜：
a、在SiN支撑层正面通过化学气相沉积法沉积一层500nm厚的碳纳米管薄膜，以二茂铁为催化剂，乙醇为碳源，氢气为载气，在管式炉中沉积碳纳米管薄膜，炉内温度为600-800℃；
b、将SiN支撑层翻转，按照背面的图案将基底用浓度30%的KOH溶液刻蚀；
c、SiN支撑层背面用160℃的热磷酸进行刻蚀去除后，得到碳纳米管掩模版光罩。
本发明的有益效果是：这种利用碳纳米管薄膜作掩模版光罩的制备方法利用碳纳米管薄膜作掩模版光罩，这种光罩透光率高，化学和热稳定性好。碳纳米管薄膜暴露在光刻环境中时对氢气等离子体环境具有很好的化学刻蚀抗性，并且能够保护基底材料防止氧化。碳纳米管薄膜的厚度可控，机械抗冲击性好，对于更小线宽更精密的掩模版具有提高利用率，降低成本增加收益的优点。
附图说明
下面结合附图和实施例对本发明进一步说明。
图1是本发明的结构示意图。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。基本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
一种利用碳纳米管薄膜作掩模版光罩的制备方法，该制备方法包括：
第一步、SiN支撑层的制备：
a、在石英玻璃基底或半导体硅基底两侧通过低压化学气相沉积法沉积SiN层，工作环境的压强为10-500Pa，工作环境温度为600-800℃；
b、在基底正面SiN层上干氧氧化沉积一层SiO2保护层，工作环境温度为1000-1200℃；
c、在背面SiN层上涂覆一层光刻胶；
d、在光刻胶层上进行图案化曝光、显影、刻蚀和去胶，基底背面得到图案化的SiN层；
e、再将基底翻转，经氢氟酸刻蚀去除基底正面的SiO2保护层后得到裸露的SiN支撑层；
第二步、在SiN支撑层上生长碳纳米管薄膜：
a、在SiN支撑层正面通过化学气相沉积法沉积一层500nm厚的碳纳米管薄膜，以二茂铁为催化剂，乙醇为碳源，氢气为载气，在管式炉中沉积碳纳米管薄膜，炉内温度为600-800℃；
b、将SiN支撑层翻转，按照背面的图案将基底用浓度30%的KOH溶液刻蚀；
c、SiN支撑层背面用160℃的热磷酸进行刻蚀去除后，得到碳纳米管掩模版光罩。
实施例
第一步、SiN支撑层的制备：
在石英玻璃基底两侧通过低压化学气相沉积法沉积SiN，工作环境的压强为100Pa，工作环境温度为700℃；并在基底正面SiN层干氧氧化沉积一层SiO2保护层，工作环境温度为1100℃，在背面SiN层上涂覆一层光刻胶；
在光刻胶层上进行图案化曝光、显影、刻蚀和去胶，基底背面得到图案化的SiN层；
再将基底翻转，经氢氟酸刻蚀去除基底正面的SiO2保护层后得到裸露的SiN支撑层。
第二步、在SiN支撑层上生长碳纳米管薄膜：
在支撑层正面通过化学气相沉积法沉积一层碳纳米管薄膜，以二茂铁为催化剂，乙醇为碳源，氢气为载气，在管式炉中沉积碳纳米管薄膜，炉内温度为800℃，反应时间为30min，沉积一层约500nm厚的薄膜；
将SiN支撑层翻转，按照背面的图案将基底用浓度30%的KOH溶液刻蚀，SiN支撑层背面用160℃的热磷酸进行刻蚀去除后，得到碳纳米管掩模版光罩。
以上所述，仅为本发明较佳的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，根据本发明的技术方案及其发明构思加以等同替换或改变，都应涵盖在本发明的保护范围之内。
Claims (1)
1.一种利用碳纳米管薄膜作掩模版光罩的制备方法，其特征在于，该制备方法包括：
第一步、SiN支撑层的制备：
a、在石英玻璃基底或半导体硅基底两侧通过低压化学气相沉积法沉积SiN层，工作环境的压强为10-500Pa，工作环境温度为600-800℃；
b、在基底正面SiN层上干氧氧化沉积一层SiO2保护层，工作环境温度为1000-1200℃；
c、在背面SiN层上涂覆一层光刻胶；
d、在光刻胶层上进行图案化曝光、显影、刻蚀和去胶，基底背面得到图案化的SiN层；
e、再将基底翻转，经氢氟酸刻蚀去除基底正面的SiO2保护层后得到裸露的SiN支撑层；
第二步、在SiN支撑层上生长碳纳米管薄膜：
a、在SiN支撑层正面通过化学气相沉积法沉积一层500nm厚的碳纳米管薄膜，以二茂铁为催化剂，乙醇为碳源，氢气为载气，在管式炉中沉积碳纳米管薄膜，炉内温度为600-800℃；
b、将SiN支撑层翻转，按照背面的图案将基底用浓度30%的KOH溶液刻蚀；
c、SiN支撑层背面用160℃的热磷酸进行刻蚀去除后，得到碳纳米管掩模版光罩。
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| CN1908813A (zh) * | 2006-08-21 | 2007-02-07 | 上海大学 | X射线光刻掩模版的制备方法 |
| CN102169287A (zh) * | 2011-05-31 | 2011-08-31 | 北京大学 | 一种光刻掩膜版及其制备方法 |
| KR20170126265A (ko) * | 2016-05-09 | 2017-11-17 | 주식회사 에스앤에스텍 | 극자외선 리소그래피용 펠리클 및 그의 제조 방법 |
| CN110902647A (zh) * | 2019-12-05 | 2020-03-24 | 深圳先进技术研究院 | 一种渐变尺寸的纳米通道的制作方法 |
| CN113512697A (zh) * | 2020-04-10 | 2021-10-19 | 中国科学技术大学 | 一种高精度硅基掩模版及其加工方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1908813A (zh) * | 2006-08-21 | 2007-02-07 | 上海大学 | X射线光刻掩模版的制备方法 |
| CN102169287A (zh) * | 2011-05-31 | 2011-08-31 | 北京大学 | 一种光刻掩膜版及其制备方法 |
| KR20170126265A (ko) * | 2016-05-09 | 2017-11-17 | 주식회사 에스앤에스텍 | 극자외선 리소그래피용 펠리클 및 그의 제조 방법 |
| CN110902647A (zh) * | 2019-12-05 | 2020-03-24 | 深圳先进技术研究院 | 一种渐变尺寸的纳米通道的制作方法 |
| CN113512697A (zh) * | 2020-04-10 | 2021-10-19 | 中国科学技术大学 | 一种高精度硅基掩模版及其加工方法 |
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