CN114520584A - Driving circuit and driving method of power tube and switching circuit - Google Patents
Driving circuit and driving method of power tube and switching circuit Download PDFInfo
- Publication number
- CN114520584A CN114520584A CN202011310607.1A CN202011310607A CN114520584A CN 114520584 A CN114520584 A CN 114520584A CN 202011310607 A CN202011310607 A CN 202011310607A CN 114520584 A CN114520584 A CN 114520584A
- Authority
- CN
- China
- Prior art keywords
- signal
- switch
- power tube
- control signal
- driving
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 28
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 claims abstract description 8
- 230000009471 action Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000001934 delay Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electronic Switches (AREA)
Abstract
The invention discloses a driving circuit and a driving method of a power tube and a switching circuit. The driving circuit comprises a driving signal generation module, the driving signal generation module is connected with an input voltage and a control end of the power tube and used for generating a grid driving signal for controlling the on and off of the power tube, the driving signal generation module is used for providing a first grid driving signal with first signal strength to the power tube in a first time period so that the output voltage increases along a first slope with time, and providing a second grid driving signal with second signal strength to the power tube in a second time period after the first time period so that the output voltage increases along a second slope larger than the first slope with time, the impact on a power supply when the power tube is switched on is avoided, and the stability and reliability of the circuit are improved.
Description
Technical Field
The invention relates to the technical field of power electronics, in particular to a driving circuit and a driving method of a power tube and a switching circuit.
Background
In the conventional power supply system, a structure for converting and outputting electric energy by controlling on and off of a switching power Transistor (i.e., a power switching Transistor, for example, implemented by an IGBT (Insulated Gate Bipolar Transistor) or a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)) is most common. As shown in fig. 1, if the conduction speed of the power device is too fast, a large charging current will be generated, and for the power supply, a large load will be formed instantaneously, which easily impacts the power supply and affects the reliability of the system. Therefore, how to reliably turn on the power device is an important problem in the conventional power device driving.
Disclosure of Invention
In view of the above, an object of the present invention is to provide a driving circuit and a driving method for a power transistor, and a switching circuit, which can reliably turn on the power transistor, avoid the impact on the power supply during the turn-on process of the power transistor, and improve the stability and reliability of the circuit.
According to a first aspect of the present invention, there is provided a driving circuit of a power transistor, the power transistor obtaining an output voltage according to an input voltage at an input terminal, wherein the driving circuit includes: the driving signal generating module is used for providing a first gate driving signal with first signal strength to the power tube in a first time period so that the output voltage increases according to a first slope along time, and providing a second gate driving signal with second signal strength to the power tube in a second time period after the first time period so that the output voltage increases according to a second slope along time, wherein the second slope is larger than the first slope.
Optionally, the driving signal generating module includes: the first resistor, the first switch and the current source are sequentially connected between the input voltage and the ground, and the middle node of the first resistor and the first switch is connected to the control end of the power tube; the second resistor and the second switch are sequentially connected between the input voltage and the control end of the power tube, wherein in the first time period, the first switch and the second switch are switched on, the driving signal generation module provides the first grid driving signal for the power tube, and in the second time period, the second switch is switched off, and the driving signal generation module provides the second grid driving signal for the power tube.
Optionally, the driving circuit further includes: the power tube comprises a switch control module and a power tube control module, wherein the switch control module is used for generating a first control signal and a second control signal according to a switch control signal, the first control signal and the second control signal are respectively used for controlling the connection and disconnection of the first switch and the second switch, and the switch control signal is used for controlling the connection and disconnection of the power tube.
Optionally, the switch control module is configured to generate the first control signal and the second control signal that are active for a first period of time during which the switch control signal is active, and to output the second control signal that is inactive after the first period of time.
Optionally, the switch control module includes: a control signal generating unit for generating the first control signal according to the switch control signal; the delay unit is used for delaying the first control signal to generate a delay signal; the inverter is used for inverting the delay signal to obtain an inverted signal; and a driving unit for converting the inverted signal into the second control signal.
According to a second aspect of the present invention, there is provided a driving method of a power tube, the power tube obtaining an output voltage according to an input voltage at an input terminal, wherein the driving method comprises: generating a first control signal and a second control signal according to the switch control signal; and providing a gate driving signal to the power transistor according to the first control signal and the second control signal, wherein the providing the gate driving signal to the power transistor according to the first control signal and the second control signal comprises: providing a first gate drive signal having a first signal strength to the power transistor for a first period of time such that the output voltage increases with time according to a first slope, and providing a second gate drive signal having a second signal strength to the power transistor for a second period of time after the first period of time such that the output voltage increases with time according to a second slope, the second slope being greater than the first slope.
Optionally, the providing, to the power transistor, a first gate driving signal with a first signal strength in a first period, and providing, to the power transistor, a second gate driving signal with a second signal strength in a second period after the first period includes: the method comprises the steps of turning on a first switch and a second switch in the first time period to enable a first resistor and a second resistor to be connected in parallel to enable a current source to provide a first grid driving signal to a power tube according to the equivalent parallel resistance of the first resistor and the second resistor, and turning off the second switch in the second time period to enable the current source to provide a second grid driving signal to the power tube according to the first resistor.
According to a third aspect of the present invention, there is provided a switching circuit including the driving circuit of the power transistor.
The driving circuit and the driving method of the power tube of the embodiment provide the first gate driving signal with the first signal strength to the power tube in the first conducting time period, so that the output voltage of the output end gradually increases along with time according to the smaller first slope, thereby avoiding the impact on the power supply in the conducting process, and then provide the second gate driving signal with the second signal strength to the power tube in the second time period after the first time period, so that the output voltage of the output end gradually increases along with time according to the larger second slope, thereby not only ensuring that the output voltage of the output end can rapidly reach the required target voltage, but also reducing the conducting voltage drop of the power tube.
Drawings
The above and other objects, features and advantages of the present invention will become more apparent from the following description of the embodiments of the present invention with reference to the accompanying drawings.
Fig. 1 shows a waveform diagram of an output voltage when a power device is turned on according to the prior art;
FIG. 2 shows a circuit schematic of a switching circuit according to a first embodiment of the invention;
fig. 3 shows a circuit schematic diagram of a switch control module in a power transistor driving circuit according to a first embodiment of the invention;
fig. 4 is a schematic diagram illustrating an operation waveform of a switching control module of a power transistor driving circuit according to a first embodiment of the invention;
FIG. 5 is a waveform diagram illustrating the operation of the power transistor driving circuit according to the first embodiment of the present invention;
fig. 6 is a flow chart illustrating a driving method of a power transistor according to a second embodiment of the present invention.
Detailed Description
The invention will be described in more detail below with reference to the accompanying drawings. Like elements are denoted by like reference numerals throughout the various figures. For purposes of clarity, the various features in the drawings are not necessarily drawn to scale. Moreover, certain well-known elements may not be shown in the figures.
In the following description, numerous specific details are set forth, such as configurations of components, materials, dimensions, processing techniques and techniques, in order to provide a more thorough understanding of the present invention. However, as will be understood by those skilled in the art, the present invention may be practiced without these specific details.
It should be understood that in the following description, "circuitry" may comprise singly or in combination hardware circuitry, programmable circuitry, state machine circuitry, and/or elements capable of storing instructions executed by programmable circuitry. When an element or circuit is referred to as being "connected" or "coupled" to another element, or being "connected" or "coupled" between two nodes, it may be directly coupled or connected to the other element or intervening elements may also be present, and the connection or coupling between the elements may be physical, logical, or a combination thereof. In contrast, when an element is referred to as being "directly coupled" or "directly connected" to another element, it is intended that there are no intervening elements present.
In the present application, a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) includes a first terminal, a second terminal, and a control terminal, and in an on state of the MOSFET, a current flows from the first terminal to the second terminal. The first end, the second end and the control end of the P-type MOSFET are respectively a source electrode, a drain electrode and a grid electrode, and the first end, the second end and the control end of the N-type MOSFET are respectively a drain electrode, a source electrode and a grid electrode.
Fig. 2 shows a circuit schematic of a switching circuit according to a first embodiment of the invention. In fig. 2, the power transistor MP1 is the main output transistor of the chip, and is connected between the input terminal and the output terminal. The power transistor MP1 is selected from, for example, a P-type MOSFET, and has a first terminal connected to the input terminal of the chip for receiving the input voltage Vin and a second terminal connected to the output terminal of the chip for providing the output voltage Vout to the post-stage circuit. The driving circuit 100 is configured to control the power transistor MP1 to be turned on or off according to the switch control signal Von, so as to control the power transmission from the chip input terminal to the chip output terminal.
The driving circuit 100 includes a switch control module 110 and a driving signal generating module 120. The switch control module 110 is configured to generate a first control signal Vk1 and a second control signal Vk2 according to a switch control signal Von. The driving signal generating module 120 is connected to the switch control module 110, the input voltage Vin, and the control terminal of the power transistor MP1, and is configured to generate a gate driving signal Vgs for controlling the power transistor MP1 to turn on or off according to the first control signal Vk1, the second control signal Vk2, and the input voltage Vin. The driving signal generating module 120 is configured to provide a first gate driving signal Vgs1 with a first signal strength to the power transistor MP1 in a first time period when the power transistor MP1 is turned on, so that the output voltage Vout increases according to a first slope with time; the second gate driving signal Vgs2 with the second signal strength is then provided to the power transistor MP1 for a second time period after the first time period so that the output voltage Vout increases with time according to a second slope, the second slope being greater than the first slope.
Specifically, the driving signal generating module 120 includes a first resistor R1, a second resistor R2, a first switch K1, a second switch K2, and a current source I1. The first resistor R1, the first switch K1 and the current source I1 are sequentially connected between the input voltage Vin and ground, and a middle node between the first resistor R1 and the first switch K1 is connected to the control end of the power tube MP 1. The second resistor R2 and the second switch K2 are connected between the input voltage Vin and the control terminal of the power transistor MP 1. Wherein, the on and off of the first switch K1 and the second switch K2 are controlled by a first control signal Vk1 and a second control signal Vk2 respectively, so that the first switch K1 and the second switch K2 are turned on during the first time period, the driving signal generating module 120 provides the first gate driving signal Vgs1 to the power transistor MP1, and the second switch K2 is turned off during the second time period, the driving signal generating module 120 provides the second gate driving signal Vgs2 to the power transistor MP 1.
Fig. 3 shows a circuit schematic diagram of a switch control module in a power tube driving circuit according to a first embodiment of the invention. As shown in fig. 3, the switch control module 110 includes a control signal generation unit 101, a delay unit 102, an inverter 103, and a driving unit 104. The control signal generating unit 101 generates a first control signal Vk1 according to the switch control signal Von, the delay unit 102 is configured to delay the first control signal Vk1 to generate a delay signal, the inverter 103 is configured to obtain an inverted signal of the delay signal, and the driving unit 104 converts the inverted signal into a second control signal Vk 2.
Fig. 4 and 5 are waveform diagrams illustrating an operation of a switching control module of a power transistor driving circuit and a waveform diagram illustrating an operation of a driving circuit according to a first embodiment of the present invention, respectively. The operation principle of the driving circuit 100 of the power transistor according to the first embodiment of the present invention will be described in detail with reference to fig. 2, 4 and 5. As shown in fig. 4, in the time period t1-t2, the switch control signal Von is inverted from low level to high level (from inactive state to active state), the first control signal Vk1 and the second control signal Vk2 are both inverted from low level to high level (from inactive state to active state), so as to turn on the first switch K1 and the second switch K2 in the driving signal generating module 120, the first resistor R1 and the second resistor R2 are connected in parallel, the resistance value R1 of the first resistor R1 is set to 150kohm, the resistance value R2 of the second resistor R2 is set to 50kohm, and then the parallel equivalent resistance of the first resistor R1 and the second resistor R2 is:
R＝50×150/(50+150)kohm＝37.5kohm
when the output current I1 of the current source I1 is set to 55uA, the first gate driving signal at this time is:
Vgs1＝37.5kohm×55uA＝2V
as shown in fig. 5, since the voltage of the first gate driving signal Vgs1 at this time is small, the output voltage Vout gradually increases with a small first slope over time, avoiding a shock to the power supply during the turn-on process.
After a time period t1-t2, the second control signal Vk2 is turned from a high level to a low level (from an active state to an inactive state), thereby turning off the second switch K2, when the current source I1 generates the second gate driving signal Vgs2 according to the first resistance R1, when the second gate driving signal is:
Vgs2＝150kohm×55uA＝8.25V
as shown in fig. 5, the voltage value of the second gate driving signal Vgs2 at this time is larger than the voltage value of the first gate driving signal Vgs1, and the output voltage Vout increases according to a larger second slope with time, so that not only can the output voltage Vout at the output terminal be ensured to reach the required target voltage quickly, but also the on-state voltage drop of the power transistor can be reduced.
Fig. 6 is a flow chart illustrating a driving method of a power transistor according to a second embodiment of the present invention. As shown in fig. 6, the driving method includes steps S01 and S02.
In step S01, a first control signal and a second control signal are generated based on the switch control signal.
In step S02, a gate driving signal is provided to the power transistor according to the first control signal and the second control signal so that the output voltage increases with time at a first slope for a first period of time and at a second slope for a second period of time after the first period of time.
Further, step S02 includes providing a first gate driving signal having a first signal strength to the power transistor for a first period of time such that the output voltage increases with a first slope over time, and providing a second gate driving signal having a second signal strength to the power transistor for a second period of time after the first period of time such that the output voltage increases with a second slope over time, the second slope being greater than the first slope.
Further, step S02 specifically includes turning on the first switch and the second switch during the first time period to connect the first resistor and the second resistor in parallel, so that the current source provides the first gate driving signal to the power transistor according to the equivalent parallel resistance of the first resistor and the second resistor, and turning off the second switch during the second time period to allow the current source to provide the second gate driving signal to the power transistor according to the first resistor.
In summary, the driving circuit and the driving method of the power transistor of this embodiment provide the first gate driving signal with the first signal strength to the power transistor in the first time period of conduction, so that the output voltage of the output end gradually increases with time according to the smaller first slope, thereby avoiding the impact on the power supply in the conduction process, and then provide the second gate driving signal with the second signal strength to the power transistor in the second time period after the first time period, so that the output voltage of the output end gradually increases with time according to the larger second slope, which not only can ensure that the output voltage of the output end can quickly reach the required target voltage, but also can reduce the conduction voltage drop of the power transistor.
It should be noted that although the device is described herein as being an N-channel or P-channel device, or an N-type or P-type doped region, one of ordinary skill in the art will appreciate that complementary devices may be implemented in accordance with the present invention. It will be understood by those skilled in the art that conductivity type refers to the mechanism by which conduction occurs, for example by conduction through holes or electrons, and thus does not relate to the doping concentration but to the doping type, for example P-type or N-type. It will be understood by those of ordinary skill in the art that the words "during", "when" and "when … …" as used herein in relation to the operation of a circuit are not strict terms referring to actions occurring immediately upon initiation of a startup action, but rather there may be some small but reasonable delay or delays, such as various transmission delays, between them and the reactive action (action) initiated by the startup action. The words "about" or "substantially" are used herein to mean that the element value (element) has a parameter that is expected to be close to the stated value or position. However, as is well known in the art, there is always a slight deviation that makes it difficult for the value or position to be exactly the stated value. It has been well established in the art that a deviation of at least ten percent (10%) for a semiconductor doping concentration of at least twenty percent (20%) is a reasonable deviation from the exact ideal target described. When used in conjunction with a signal state, the actual voltage value or logic state (e.g., "1" or "0") of the signal depends on whether positive or negative logic is used.
Moreover, it is further noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
While embodiments in accordance with the invention have been described above, these embodiments are not intended to be exhaustive or to limit the invention to the precise embodiments described. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best utilize the invention and various embodiments with various modifications as are suited to the particular use contemplated. The invention is limited only by the claims and their full scope and equivalents.
Claims (8)
1. A driving circuit of a power tube, the power tube obtaining an output voltage according to an input voltage of an input end, wherein the driving circuit comprises:
a driving signal generating module connected with the input voltage and the control end of the power tube and used for generating a grid driving signal for controlling the on and off of the power tube,
wherein the driving signal generating module is used for providing a first gate driving signal with a first signal strength to the power tube in a first time period so that the output voltage is increased along a first slope with time, and
providing a second gate drive signal having a second signal strength to the power tube for a second time period after the first time period such that the output voltage increases with time according to a second slope, the second slope being greater than the first slope.
2. The driving circuit of claim 1, wherein the driving signal generating module comprises:
the first resistor, the first switch and the current source are sequentially connected between the input voltage and the ground, and the middle node of the first resistor and the first switch is connected to the control end of the power tube;
a second resistor and a second switch connected between the input voltage and the control end of the power tube in turn,
the first switch and the second switch are turned on in the first time period, the driving signal generation module provides the first gate driving signal to the power tube, and the second switch is turned off in the second time period, and the driving signal generation module provides the second gate driving signal to the power tube.
3. The drive circuit of claim 2, further comprising:
the power tube comprises a switch control module and a power tube control module, wherein the switch control module is used for generating a first control signal and a second control signal according to a switch control signal, the first control signal and the second control signal are respectively used for controlling the connection and disconnection of the first switch and the second switch, and the switch control signal is used for controlling the connection and disconnection of the power tube.
4. The drive circuit of claim 3, wherein the switch control module is configured to generate the first and second control signals that are active for a first period of time during which the switch control signal is active, and to output the second control signal that is inactive after the first period of time.
5. The drive circuit of claim 4, wherein the switch control module comprises:
a control signal generating unit for generating the first control signal according to the switch control signal;
the delay unit is used for delaying the first control signal to generate a delay signal;
the inverter is used for inverting the delay signal to obtain an inverted signal; and
a driving unit for converting the inverted signal into the second control signal.
6. A driving method of a power tube, the power tube obtaining an output voltage according to an input voltage of an input end, wherein the driving method comprises the following steps:
generating a first control signal and a second control signal according to the switch control signal; and
providing a gate driving signal to the power transistor according to the first control signal and the second control signal,
wherein the providing a gate driving signal to the power transistor according to the first control signal and the second control signal comprises:
providing a first gate drive signal having a first signal strength to the power transistor for a first period of time such that the output voltage increases with time according to a first slope, an
Providing a second gate drive signal having a second signal strength to the power tube for a second time period after the first time period such that the output voltage increases with time according to a second slope, the second slope being greater than the first slope.
7. The driving method according to claim 6, wherein the providing the first gate driving signal having a first signal strength to the power transistor for a first period of time, and the providing the second gate driving signal having a second signal strength to the power transistor for a second period of time after the first period of time comprises:
turning on a first switch and a second switch in the first time period to enable a first resistor and a second resistor to be connected in parallel, so that a current source provides the first gate drive signal to the power tube according to the equivalent parallel resistance of the first resistor and the second resistor, and
and in the second time period, the second switch is turned off, so that the current source provides the second gate driving signal to the power tube according to the first resistance.
8. A switching circuit comprising a driver circuit for a power transistor according to any one of claims 1 to 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011310607.1A CN114520584B (en) | 2020-11-20 | 2020-11-20 | Driving circuit and driving method of power tube and switching circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011310607.1A CN114520584B (en) | 2020-11-20 | 2020-11-20 | Driving circuit and driving method of power tube and switching circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114520584A true CN114520584A (en) | 2022-05-20 |
| CN114520584B CN114520584B (en) | 2024-08-30 |
Family
ID=81594121
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011310607.1A Active CN114520584B (en) | 2020-11-20 | 2020-11-20 | Driving circuit and driving method of power tube and switching circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114520584B (en) |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200921663A (en) * | 2007-11-15 | 2009-05-16 | Ind Tech Res Inst | Light transmitter and an automatic power control circuit thereof |
| US20090190629A1 (en) * | 2008-01-25 | 2009-07-30 | Chun-Chieh Fang | Temperature Sensing Device for Improving Series Resistance Cancellation Mechanism |
| JP2012157215A (en) * | 2011-01-28 | 2012-08-16 | Sanken Electric Co Ltd | Driving circuit and switching power supply device |
| CN204497963U (en) * | 2015-03-19 | 2015-07-22 | 上海新进半导体制造有限公司 | A kind of line voltage compensation circuit and inverse excitation type converter |
| CN205070779U (en) * | 2015-07-22 | 2016-03-02 | 深圳市稳先微电子有限公司 | Power tube control system and drive circuit who is used for driving external power tube |
| CN106300983A (en) * | 2015-05-26 | 2017-01-04 | 福州瑞芯微电子股份有限公司 | A kind of inverse-excitation type switch power-supply input voltage measurement device and method |
| CN106357104A (en) * | 2016-10-14 | 2017-01-25 | 合肥京东方光电科技有限公司 | Soft start power supply circuit and control method thereof, as well as display device |
| CN106921284A (en) * | 2017-05-05 | 2017-07-04 | 电子科技大学 | A kind of MOSFET floating driving circuits |
| CN110149042A (en) * | 2019-06-14 | 2019-08-20 | 电子科技大学 | A kind of power tube gate driving circuit with drive part by part function |
| US20200052686A1 (en) * | 2017-04-26 | 2020-02-13 | Mitsubishi Electric Corporation | Semiconductor device driving method and driving apparatus and power conversion apparatus |
| CN210629440U (en) * | 2019-09-17 | 2020-05-26 | 圣邦微电子（北京）股份有限公司 | Power tube grid driving circuit and integrated circuit |
| CN111293859A (en) * | 2018-12-10 | 2020-06-16 | 圣邦微电子（北京）股份有限公司 | Driving circuit and driving method of power switch tube |
| US10826288B1 (en) * | 2019-05-31 | 2020-11-03 | Excelliance Mos Corporation | Power circuit for reducing inrush current |
-
2020
- 2020-11-20 CN CN202011310607.1A patent/CN114520584B/en active Active
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200921663A (en) * | 2007-11-15 | 2009-05-16 | Ind Tech Res Inst | Light transmitter and an automatic power control circuit thereof |
| US20090190629A1 (en) * | 2008-01-25 | 2009-07-30 | Chun-Chieh Fang | Temperature Sensing Device for Improving Series Resistance Cancellation Mechanism |
| JP2012157215A (en) * | 2011-01-28 | 2012-08-16 | Sanken Electric Co Ltd | Driving circuit and switching power supply device |
| CN204497963U (en) * | 2015-03-19 | 2015-07-22 | 上海新进半导体制造有限公司 | A kind of line voltage compensation circuit and inverse excitation type converter |
| CN106300983A (en) * | 2015-05-26 | 2017-01-04 | 福州瑞芯微电子股份有限公司 | A kind of inverse-excitation type switch power-supply input voltage measurement device and method |
| CN205070779U (en) * | 2015-07-22 | 2016-03-02 | 深圳市稳先微电子有限公司 | Power tube control system and drive circuit who is used for driving external power tube |
| CN106357104A (en) * | 2016-10-14 | 2017-01-25 | 合肥京东方光电科技有限公司 | Soft start power supply circuit and control method thereof, as well as display device |
| US20200052686A1 (en) * | 2017-04-26 | 2020-02-13 | Mitsubishi Electric Corporation | Semiconductor device driving method and driving apparatus and power conversion apparatus |
| CN106921284A (en) * | 2017-05-05 | 2017-07-04 | 电子科技大学 | A kind of MOSFET floating driving circuits |
| CN111293859A (en) * | 2018-12-10 | 2020-06-16 | 圣邦微电子（北京）股份有限公司 | Driving circuit and driving method of power switch tube |
| US10826288B1 (en) * | 2019-05-31 | 2020-11-03 | Excelliance Mos Corporation | Power circuit for reducing inrush current |
| CN110149042A (en) * | 2019-06-14 | 2019-08-20 | 电子科技大学 | A kind of power tube gate driving circuit with drive part by part function |
| CN210629440U (en) * | 2019-09-17 | 2020-05-26 | 圣邦微电子（北京）股份有限公司 | Power tube grid driving circuit and integrated circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114520584B (en) | 2024-08-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10324485B2 (en) | Body bias voltage generating circuit | |
| JP2009201096A (en) | Switch circuit | |
| US20030151448A1 (en) | Negative voltage output charge pump circuit | |
| CN110768649B (en) | Gate circuit and gate drive circuit of power semiconductor switch | |
| CN114204924A (en) | Protection circuit and load switch circuit of power switch tube | |
| TWI596898B (en) | Power module and control method thereof | |
| CN107395183B (en) | Pulse high-current ignition switch circuit | |
| CN106992772B (en) | Negative-pressure self-bias PIN switch driver and negative-pressure generation method thereof | |
| CN109861503B (en) | Driving circuit for power device | |
| US6813169B2 (en) | Inverter device capable of reducing through current | |
| CN114520584A (en) | Driving circuit and driving method of power tube and switching circuit | |
| CN108303666B (en) | Function test circuit of power semiconductor module overcurrent detection circuit | |
| US20240056079A1 (en) | Interface circuit | |
| CN106411297A (en) | High temperature driving protection circuit based on silicon-on-insulator | |
| CN113131905B (en) | Schmitt trigger circuit | |
| CN114244339A (en) | Gate drive circuit and electronic device | |
| JP2009095166A (en) | Gate driving device for voltage control type switching device | |
| CN113054828B (en) | Drive circuit and electrical power generating system of power switch tube | |
| CN114696585A (en) | Drive circuit and switching circuit of power tube | |
| KR20210089099A (en) | Gate drive apparatus and control method | |
| CN113131913B (en) | Input stage circuit, drive circuit and power supply system | |
| TWI382661B (en) | Switching apparatus and control signal generator thereof | |
| CN206332608U (en) | A kind of IGBT resistances adjusted circuit | |
| US9379601B2 (en) | Charge module, driving circuit, and operating method | |
| WO2015081628A1 (en) | Circuit and method for optimizing input voltage range of ic chip |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |