CN106992772B - Negative-pressure self-bias PIN switch driver and negative-pressure generation method thereof - Google Patents
Negative-pressure self-bias PIN switch driver and negative-pressure generation method thereof Download PDFInfo
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- CN106992772B CN106992772B CN201710280207.2A CN201710280207A CN106992772B CN 106992772 B CN106992772 B CN 106992772B CN 201710280207 A CN201710280207 A CN 201710280207A CN 106992772 B CN106992772 B CN 106992772B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/74—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The invention belongs to the technical field of microwaves, and particularly relates to a negative pressure self-bias PIN switch driver and a negative voltage generation method thereof. The invention comprises a driving circuit and a negative pressure self-bias circuit, wherein the control end of the driving circuit is connected with a TTL control signal, the driving circuit is respectively connected with a power supply Vcc and a ground GND, the signal output end of the driving circuit is connected with the signal input end of the negative pressure self-bias circuit, and the signal output end of the negative pressure self-bias circuit generates negative voltage. The driving circuit and the negative pressure self-biasing circuit have small number of components, so that the whole PIN switch driver has simple structure, small volume and high reliability. The driving circuit and the negative pressure self-bias circuit are built by adopting discrete components, and the cost is low.
Description
Technical Field
The invention belongs to the technical field of microwaves, and particularly relates to a negative pressure self-bias PIN switch driver and a negative voltage generation method thereof.
Background
The microwave switch is built by a common PIN tube, the impedance of the PIN tube is low when forward bias voltage is applied, the impedance can be equivalent to small resistance, the larger forward current is, the smaller the resistance value is, the impedance is high when no bias voltage or reverse bias voltage is applied, the equivalent is small capacitance, and the larger reverse bias voltage is, the smaller the capacitance value is. A suitable PIN switch driver must be used in order to better achieve PIN switch performance.
The basic function that the PIN switch driver needs to provide is a voltage switching function, i.e. the PIN switch driver needs to change the output voltage under control of the control signal to control the switching of the PIN switch. In addition to the basic function, the PIN switch driver needs to reduce the switching time of the PIN switch by controlling the instantaneous current when the switch is switched. The common PIN switch driver is shown in fig. 1, and the circuit needs 2 triodes, 1 diode, 7 resistor, 4 capacitor, and has the advantages of a large number of components, a very complex structure and a large volume. Meanwhile, the driving circuit needs to supply a negative voltage. If the product does not directly provide negative voltage, a negative voltage conversion circuit must be additionally built. The structure of the common negative voltage conversion circuit is very complex, which leads to increased cost and volume and reduces the reliability of the product.
Disclosure of Invention
In order to overcome the defects in the prior art, the invention provides the negative pressure self-bias PIN switch driver which has the advantages of simple circuit structure, less number of components and low cost, has the negative pressure self-bias function and can accelerate the switching speed.
In order to achieve the above object, the present invention adopts the following technical measures:
the negative pressure self-bias PIN switch driver comprises a driving circuit and a negative pressure self-bias circuit, wherein a control end of the driving circuit is connected with a TTL control signal, the driving circuit is respectively connected with a power supply Vcc and a ground GND, a signal output end of the driving circuit is connected with a signal input end of the negative pressure self-bias circuit, and a signal output end of the negative pressure self-bias circuit is connected with an output voltage Vout.
Preferably, the driving circuit includes a first field effect transistor and a second field effect transistor, wherein the gates of the first field effect transistor and the second field effect transistor are both connected with a TTL control signal, the drain of the first field effect transistor is connected with a power supply Vcc, the source of the second field effect transistor is connected with a ground GND, and the sources of the first field effect transistor and the drain of the second field effect transistor are both connected with the signal input end of the negative-pressure self-bias circuit.
Preferably, the negative pressure self-bias circuit comprises a first capacitor, a first diode, a first resistor and a second resistor, wherein one end of the first capacitor and the positive electrode of the first diode are connected with the source electrode of the first field effect transistor and the drain electrode of the second field effect transistor, the negative electrode of the first diode is connected with one end of the first resistor, the other end of the first capacitor and the other end of the first resistor are connected with one end of the second resistor, and the other end of the second resistor is connected with the output voltage Vout.
Further, the first field effect transistor is an N-enhancement metal oxide semiconductor field effect transistor; the second field effect transistor is a P-depletion type metal oxide semiconductor field effect transistor.
The invention also provides a negative voltage generating method of the negative voltage self-bias PIN switch driver, which is easy to maintain and comprises the following steps:
the TTL control signal controls the driving circuit to switch the output voltage of the driving circuit between the power supply Vcc and the ground GND, and when the output voltage of the driving circuit is switched from the power supply Vcc to the ground GND, the negative pressure is generated from the signal output end of the bias circuit.
Preferably, the positive current flowing to the output voltage Vout and the reverse instantaneous current value flowing to the output voltage Vout when the TTL control signal is switched from the high level to the low level are controlled by adjusting the resistances of the first resistor and the second resistor of the negative-pressure self-bias circuit.
The invention has the beneficial effects that:
1) The invention comprises a driving circuit and a negative pressure self-bias circuit, wherein the driving circuit and the negative pressure self-bias circuit contain fewer components, so that the whole PIN switch driver has simple structure, small volume and high reliability.
2) The driving circuit and the negative pressure self-bias circuit are built by adopting discrete components, so that the cost is low.
3) The invention has the negative pressure self-bias function, and can generate negative voltage without building a complex negative pressure conversion circuit.
4) The first field effect transistor is an N-enhanced metal oxide semiconductor field effect transistor; the second field effect transistor is a P-depletion type metal oxide semiconductor field effect transistor, the cost is low, and the components are all easily obtained.
Drawings
FIG. 1 is a schematic diagram of a PIN switch driver in the prior art;
FIG. 2 is a block diagram of the structural connections of the present invention;
fig. 3 is a schematic circuit diagram of an embodiment of the present invention.
The reference numerals in the figures have the following meanings:
10-drive circuit 20-negative pressure self-bias circuit
N1, N2-first field effect transistor, second field effect transistor
R1, R2-first resistor, second resistor
C1-first capacitor D1-first diode
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
As shown in fig. 2, a negative-pressure self-bias PIN switch driver includes a driving circuit 10 and a negative-pressure self-bias circuit 20, wherein a control end of the driving circuit 10 is connected with a TTL control signal, the driving circuit 10 is respectively connected with a power supply Vcc and a ground GND, a signal output end of the driving circuit 10 is connected with a signal input end of the negative-pressure self-bias circuit 20, a signal output end of the negative-pressure self-bias circuit 20 is connected with an output voltage Vout, and a signal output end of the negative-pressure self-bias circuit 20 generates a negative voltage.
As shown in fig. 3, the driving circuit 10 includes a first field effect transistor N1 and a second field effect transistor N2, wherein the gates of the first field effect transistor N1 and the second field effect transistor N2 are both connected to a TTL control signal, the drain of the first field effect transistor N1 is connected to a power source Vcc, the source of the second field effect transistor N2 is connected to a ground GND, and the sources of the first field effect transistor N1 and the drain of the second field effect transistor N2 are both connected to a signal input terminal of the negative-pressure self-bias circuit 20.
The first field effect transistor N1 is an N-enhanced metal oxide semiconductor field effect transistor; the second field effect transistor N2 is a P-depletion type metal oxide semiconductor field effect transistor.
The negative-pressure self-bias circuit 20 comprises a first capacitor C1, a first diode D1, a first resistor R1 and a second resistor R2, wherein one end of the first capacitor C1 and the positive electrode of the first diode D1 are connected with the source electrode of the first field effect transistor N1 and the drain electrode of the second field effect transistor N2, the negative electrode of the first diode D1 is connected with one end of the first resistor R1, the other end of the first capacitor C1 and the other end of the first resistor R1 are connected with one end of the second resistor R2, the other end of the second resistor R2 is connected with the output voltage Vout, and the other end of the second resistor R2 generates negative voltage.
The invention also provides a negative voltage generating method of the negative voltage self-bias PIN switch driver, which comprises the following steps:
the TTL control signal controls the driving circuit 10 to switch the output voltage of the driving circuit 10 between the power Vcc and the ground GND, and when the output voltage of the driving circuit 10 is switched from the power Vcc to the ground GND, the negative voltage is generated from the signal output terminal of the bias circuit 20.
By adjusting the resistances of the first resistor R1 and the second resistor R2 of the negative-pressure self-bias circuit 20, the forward current flowing to the output voltage Vout and the reverse instantaneous current flowing to the output voltage Vout when the TTL control signal is switched from the high level to the low level are controlled.
When the TTL control signal is changed from 0 to 1, the second field effect transistor N2 is turned off, the first field effect transistor N1 is turned on, the first diode D1 and the first resistor R1 are shorted by the first capacitor C1 at the moment of switching the TTL control signal, the instantaneous current passing through the output voltage Vout is (Vcc-Vout)/R1, the first capacitor C1 plays a role of accelerating the conduction of the PIN, the stabilized power Vcc is reduced by the first diode D1, the first resistor R1 and the second resistor R2 and then outputted to the PIN, and the current i1= (Vcc-Vout-0.7)/(r1+r2) of the output voltage Vout is obtained by integrating the voltages at both ends of the first diode D1 and the first resistor R1, that is, the voltage v2=i1×r1+0.7 at both ends of the first capacitor C1.
When the TTL control signal is changed from 1 to 0, the second field effect transistor N2 is turned on, the first field effect transistor N1 is turned off, the charge at one end of the first capacitor C1 is quickly neutralized with the ground charge at the moment of switching the TTL control signal, the potential change becomes 0, the charge at the other end of the first capacitor C1 must be slowly released through two paths of the first resistor R1 and the second resistor R2, at this moment, the potential difference at two ends of the first capacitor C1 is half of that when the TTL control signal is 1, the potential at the other end of the first capacitor C1 is smaller than that at one end of the first capacitor C1, and the potential at the other end of the first capacitor C1 is-V2/2, so that an instant negative voltage is provided for the PIN at the output end and a larger reverse instant current is generated, the reverse current can help the PIN tube to be quickly switched from the on state to the off state, and the switching speed is further increased.
When the circuit is designed, the forward current and the reverse instantaneous current value during power supply switching can be controlled by adjusting the resistance values of the first resistor R1 and the second resistor R2.
The invention has the negative pressure self-bias function, and can generate negative voltage without building a complex negative pressure conversion circuit.
Claims (4)
1. A negative pressure self-biasing PIN switch driver, characterized by: the self-bias circuit comprises a driving circuit (10) and a negative pressure self-bias circuit (20), wherein the control end of the driving circuit (10) is connected with a TTL control signal, the driving circuit (10) is respectively connected with a power supply Vcc and a ground GND, the signal output end of the driving circuit (10) is connected with the signal input end of the negative pressure self-bias circuit (20), and the signal output end of the negative pressure self-bias circuit (20) is connected with an output voltage Vout;
the driving circuit (10) comprises a first field effect transistor (N1) and a second field effect transistor (N2), wherein the grid electrode of the first field effect transistor (N1) and the grid electrode of the second field effect transistor (N2) are both connected with TTL control signals, the drain electrode of the first field effect transistor (N1) is connected with a power supply Vcc, the source electrode of the second field effect transistor (N2) is connected with the ground GND, and the source electrode of the first field effect transistor (N1) and the drain electrode of the second field effect transistor (N2) are both connected with the signal input end of the negative pressure self-bias circuit (20);
negative pressure is from bias circuit (20) including first electric capacity (C1), first diode (D1), first resistance (R1) and second resistance (R2), the source electrode of first field effect transistor (N1) and the drain electrode of second field effect transistor (N2) are all connected to the one end of first electric capacity (C1), the positive pole of first diode (D1), the one end of first resistance (R1) is connected to the negative pole of first diode (D1), the one end of second resistance (R2) is all connected to the other end of first electric capacity (C1), the other end of first resistance (R1), output voltage Vout is connected to the other end of second resistance (R2).
2. A negative pressure self-biasing PIN switch driver as claimed in claim 1, wherein: the first field effect transistor (N1) is an N-enhancement metal oxide semiconductor field effect transistor; the second field effect transistor (N2) is a P-depletion metal oxide semiconductor field effect transistor.
3. The negative voltage generating method of a negative voltage self-biasing PIN switch driver as claimed in claim 2, comprising the steps of:
the TTL control signal controls the driving circuit (10) to enable the output voltage of the driving circuit (10) to be switched between the power supply Vcc and the ground GND, and when the output voltage of the driving circuit (10) is switched from the power supply Vcc to the ground GND, the negative voltage is generated at the signal output end of the negative-pressure self-biasing circuit (20).
4. A negative voltage generating method of a negative voltage self-biasing PIN switch driver as claimed in claim 3, wherein: the forward current flowing to the output voltage Vout and the reverse instantaneous current value flowing to the output voltage Vout when the TTL control signal is switched from high level to low level are controlled by adjusting the resistance values of the first resistor (R1) and the second resistor (R2) of the negative pressure self-bias circuit (20).
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710280207.2A CN106992772B (en) | 2017-04-26 | 2017-04-26 | Negative-pressure self-bias PIN switch driver and negative-pressure generation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710280207.2A CN106992772B (en) | 2017-04-26 | 2017-04-26 | Negative-pressure self-bias PIN switch driver and negative-pressure generation method thereof |
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| CN106992772A CN106992772A (en) | 2017-07-28 |
| CN106992772B true CN106992772B (en) | 2023-06-27 |
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| CN113156404B (en) * | 2020-01-21 | 2023-03-24 | 苏州一径科技有限公司 | Reverse bias voltage adjusting device and method and laser radar |
| CN111555737B (en) * | 2020-05-21 | 2022-05-20 | 广东省大湾区集成电路与系统应用研究院 | Controllable voltage slew rate N type MOS high side drive circuit |
| CN116256707B (en) * | 2023-05-15 | 2023-08-08 | 浙江宜通华盛科技有限公司 | Dual-polarization array radar and PIN tube SPDT switching device and method thereof |
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| US4253035A (en) * | 1979-03-02 | 1981-02-24 | Bell Telephone Laboratories, Incorporated | High-speed, low-power, ITL compatible driver for a diode switch |
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| CN203406774U (en) * | 2013-04-25 | 2014-01-22 | 薛涛 | Large-power MOSFET negative-voltage drive circuit |
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2017
- 2017-04-26 CN CN201710280207.2A patent/CN106992772B/en active Active
Patent Citations (8)
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| US4253035A (en) * | 1979-03-02 | 1981-02-24 | Bell Telephone Laboratories, Incorporated | High-speed, low-power, ITL compatible driver for a diode switch |
| US5144157A (en) * | 1991-09-23 | 1992-09-01 | Raytheon Company | Pin diode driver circuit for radar system |
| US5212408A (en) * | 1992-02-06 | 1993-05-18 | Ael Defense Corp. | Ultra fast pin diode switch |
| JPH10145106A (en) * | 1996-11-08 | 1998-05-29 | Kokusai Electric Co Ltd | Frequency variable filter |
| US6937846B1 (en) * | 1999-11-09 | 2005-08-30 | Siemens Aktiengesellschaft | Pin diode circuit arrangement |
| CN203406774U (en) * | 2013-04-25 | 2014-01-22 | 薛涛 | Large-power MOSFET negative-voltage drive circuit |
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| CN106992772A (en) | 2017-07-28 |
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