CN216390950U - Radio frequency switch forward bias accelerated establishment circuit and radio frequency switch - Google Patents
Radio frequency switch forward bias accelerated establishment circuit and radio frequency switch Download PDFInfo
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- CN216390950U CN216390950U CN202122696130.1U CN202122696130U CN216390950U CN 216390950 U CN216390950 U CN 216390950U CN 202122696130 U CN202122696130 U CN 202122696130U CN 216390950 U CN216390950 U CN 216390950U
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Abstract
The utility model provides a radio frequency switch forward bias accelerated establishment circuit which comprises an enabling signal input end, a reference voltage generation circuit, a low-dropout linear regulator, an oscillator, a forward double charge pump, a high-voltage bias output end, a bias voltage stabilizing capacitor, a logic turnover detection circuit and an accelerated establishment circuit. The utility model also provides a radio frequency switch which comprises the forward bias accelerated establishment circuit of the radio frequency switch. Compared with the prior art, the forward bias accelerated establishment circuit of the radio frequency switch and the radio frequency switch have the advantages of small delay and high response speed.
Description
Technical Field
The utility model relates to the technical field of wireless communication radio frequency switches, in particular to a radio frequency switch forward bias accelerated establishment circuit and a radio frequency switch.
Background
Radio frequency switches are widely used in wireless communication devices, and are used in occasions where radio frequency signals need to be turned on or off, such as transmitting and receiving switches, channel selection switches, tuning switches, reversing switches, and the like. Currently, in consideration of cost and performance, a silicon substrate-buried oxide layer-silicon on the outer edge (SOI) technology is generally used in wireless communication equipment, and a metal oxide field effect transistor (MOS) device is grown on the outer edge silicon to manufacture a radio frequency switch circuit. In order to improve the integration level in the present handheld device, the normal voltage analog power supply of the rf switch is usually omitted, and only the low voltage digital power supply of the serial control interface is reserved, so the rf switch needs to use the low voltage power supply to provide bias for the rf device operating at normal voltage.
In the conventional rf switch, as shown in fig. 1, a low dropout linear regulator is usually used to convert the power supply voltage to a half of the normal voltage, and then a forward double charge pump is used to boost the voltage to the voltage required by the rf device. Meanwhile, for the requirement of low power consumption, when the radio frequency switch link is not needed to work, the serial control interface closes all the control circuits and only reserves the power supply of the interface. However, when the rf switch needs to be started, as shown in fig. 2, the reference voltage generating circuit and the low dropout regulator have slow response and the oscillator and the double charge pump have response delay, so that the rf switch cannot provide correct functions for a long time after receiving the serial control enable signal, and the response speed is slow.
Therefore, there is a need to provide a new forward bias accelerated setup circuit for rf switch and rf switch to solve the above-mentioned problems.
SUMMERY OF THE UTILITY MODEL
In view of the above disadvantages of the related art, the present invention provides a forward bias accelerated setup circuit for a radio frequency switch and a radio frequency switch with small delay and fast response speed.
In order to solve the above technical problem, an embodiment of the present invention provides a forward bias accelerated establishment circuit for a radio frequency switch, including:
an enable signal input terminal for connecting an external enable signal;
the reference voltage generating circuit is used for generating reference voltage, the input end of the reference voltage generating circuit is connected with the enable signal input end, the power supply end of the reference voltage generating circuit is connected with power supply voltage, and the grounding end of the reference voltage generating circuit is connected to the ground;
the input of the low dropout linear regulator is respectively connected to the power supply voltage, the output end of the reference voltage generating circuit and the enable signal input end;
the input end of the oscillator is connected to the enable signal input end, the power supply end of the oscillator is connected to a power supply voltage, and the grounding end of the oscillator is connected to the ground;
a positive double charge pump, a first input end of which is connected to the output end of the oscillator, a second input end of which is connected to the output end of the low dropout regulator, and a ground end of which is connected to ground;
a high voltage bias output connected to an output of the forward double charge pump;
the positive electrode of the bias voltage stabilizing capacitor is connected to the output end of the forward double charge pump, and the negative electrode of the bias voltage stabilizing capacitor is connected to the ground;
the input end of the logic turnover detection circuit is connected to the enable signal input end, the power supply end of the logic turnover detection circuit is connected to the power supply voltage, and the grounding end of the logic turnover detection circuit is connected to the ground; and the number of the first and second groups,
the accelerated setting circuit comprises an accelerated pull-up transistor and a diode, the grid electrode of the accelerated pull-up transistor is connected to the output end of the logic turnover detection circuit, the source electrode of the accelerated pull-up transistor is connected to the power supply voltage, the drain electrode of the accelerated pull-up transistor is connected to the positive end of the diode, and the negative end of the diode is connected to the output end of the forward double charge pump.
Preferably, the accelerated pull-up transistor is a PMOSFET triode.
Preferably, the low dropout regulator comprises a dual operational amplifier, a power transistor, a first inductor and a second inductor; the drain electrode of the power transistor is sequentially connected with the first inductor and the second inductor in series and then connected to the ground, the drain electrode of the power transistor serves as the output end of the low dropout linear regulator, the source electrode of the power transistor is connected to the power supply voltage, and the grid electrode of the power transistor is connected to the output end of the double operational amplifier; the first operational amplifier equidirectional input end of the dual operational amplifier is connected between the first inductor and the second inductor, the first operational amplifier inverting input end of the dual operational amplifier is connected to the output end of the reference voltage generating circuit, the second operational amplifier equidirectional input end of the dual operational amplifier is connected to the enable signal input end, the power supply end of the dual operational amplifier is connected to the power supply voltage, and the grounding end of the dual operational amplifier is connected to the ground.
Preferably, the radio frequency switch forward bias acceleration establishing circuit further includes a reference voltage stabilizing capacitor, an anode of the reference voltage stabilizing capacitor is connected to the output end of the low dropout linear regulator, and a second output end of the reference voltage stabilizing capacitor is connected to ground.
Preferably, the power transistor is a PMOSFET triode.
The embodiment of the utility model also provides a radio frequency switch, which comprises the forward bias accelerated establishment circuit of the radio frequency switch.
Compared with the prior art, the radio frequency switch forward bias accelerated establishment circuit and the radio frequency switch are provided with the accelerated establishment circuit, the accelerated establishment circuit comprises an accelerated pull-up transistor and a diode, the grid electrode of the accelerated pull-up transistor is connected to the output end of the logic inversion detection circuit, the source electrode of the accelerated pull-up transistor is connected to the power supply voltage, the drain electrode of the accelerated pull-up transistor is connected to the positive electrode end of the diode, the negative electrode end of the diode is connected to the output end of the forward double charge pump, therefore, the logic inversion detection circuit outputs a pulse with a certain length as a signal for starting the acceleration circuit as the inversion of an enable signal is detected, the signal enables the accelerated pull-up transistor established in an inverting way after being inverted, and charges a bias voltage stabilizing capacitor of the charge pump after one diode drop is reduced, the low dropout linear regulator and the oscillator can obtain an intermediate level before working, and the charge pump only needs to lift the output level on the basis of the intermediate level along with the pulse end of the logic turnover detection circuit and the output of the low dropout linear regulator tending to be normal, so that the response time of the forward bias acceleration establishing circuit of the radio frequency switch and the radio frequency switch is effectively shortened, and the purposes of small delay and quick response of a simple circuit are achieved.
Drawings
The present invention will be described in detail below with reference to the accompanying drawings. The foregoing and other aspects of the utility model will become more apparent and more readily appreciated from the following detailed description, taken in conjunction with the accompanying drawings. In the drawings:
FIG. 1 is a circuit schematic diagram of a related art RF switch forward bias accelerated setup circuit;
FIG. 2 is a schematic diagram illustrating a voltage signal variation of a forward bias accelerated settling circuit of a RF switch according to the related art;
fig. 3 is a schematic circuit diagram of a forward bias accelerated setup circuit of an rf switch according to an embodiment of the present invention;
fig. 4 is a schematic diagram of a voltage signal variation of the forward bias accelerated setup circuit of the rf switch according to the embodiment of the present invention.
Detailed Description
The following detailed description of embodiments of the utility model refers to the accompanying drawings.
The embodiments/examples described herein are specific embodiments of the present invention, are intended to be illustrative of the concepts of the present invention, are intended to be illustrative and exemplary, and should not be construed as limiting the embodiments and scope of the utility model. In addition to the embodiments described herein, those skilled in the art will be able to employ other technical solutions which are obvious based on the disclosure of the claims and the specification of the present application, and these technical solutions include those which make any obvious replacement or modification of the embodiments described herein, and all of which are within the scope of the present invention.
The following description of the embodiments refers to the accompanying drawings for illustrating the specific embodiments in which the utility model may be practiced. Directional phrases used herein, such as, for example, upper, lower, front, rear, left, right, inner, outer, lateral, and the like, refer only to the orientation of the appended drawings. Accordingly, the directional terms used are used for explanation and understanding of the present invention, and are not used for limiting the present invention.
Fig. 3 is a circuit diagram of a forward bias accelerated setup circuit of an rf switch according to an embodiment of the present invention. The utility model provides a forward bias accelerated establishment circuit 100 of a radio frequency switch, comprising: the circuit comprises an enable signal input end Ein, a reference voltage generating circuit 1, a low dropout linear regulator 2, an oscillator 3, a forward double charge pump 4, a high voltage bias output end Vout, a bias voltage stabilizing capacitor C1, a logic inversion detection circuit 5 and an acceleration establishing circuit 6.
And the enable signal input end Ein is used for connecting an external enable signal.
The reference voltage generating circuit 1 is configured to generate a reference voltage, an input terminal of the reference voltage generating circuit 1 is connected to the enable signal input terminal, a power supply terminal of the reference voltage generating circuit 1 is connected to a power supply voltage Vcc, and a ground terminal of the reference voltage generating circuit 1 is connected to ground.
The input of the low dropout regulator 2 is connected to the power supply voltage Vcc, the output terminal of the reference voltage generating circuit 1, and the enable signal input terminal Ein, respectively.
Specifically, in this embodiment, the low dropout linear regulator 2 includes a dual operational amplifier 21, a power transistor Q1, a first inductor L1, and a second inductor L2.
In this embodiment, the power transistor Q1 is a PMOSFET triode.
The drain of the power transistor Q1 is connected in series with the first inductor L1 and the second inductor L2 in sequence and then connected to ground, and the drain of the power transistor Q1 is used as the output terminal of the low dropout linear regulator 2.
The source of the power transistor Q1 is connected to the supply voltage Vcc.
The gate of the power transistor Q1 is connected to the output of the dual operational amplifier 21.
A first operational amplifier common-direction input end of the dual operational amplifier 21 is connected between the first inductor L1 and the second inductor L2, a first operational amplifier inverting input end of the dual operational amplifier 21 is connected to an output end of the reference voltage generating circuit 1, a second operational amplifier common-direction input end of the dual operational amplifier 21 is connected to the enable signal input end Ein, a power supply end of the dual operational amplifier 21 is connected to the power supply voltage Vcc, and a ground end of the dual operational amplifier 21 is connected to the ground.
The input end of the oscillator 3 is connected to the enable signal input end Ein, the power supply end of the oscillator 3 is connected to the power supply voltage Vcc, and the ground end of the oscillator 3 is connected to the ground.
A first input end of the forward double charge pump 4 is connected to the output end of the oscillator 3, a second input end of the forward double charge pump 4 is connected to the output end of the low dropout regulator 2, and a ground end of the forward double charge pump 4 is connected to ground.
The high voltage bias output Fout is connected to the output of the forward double charge pump 4.
The anode of the bias voltage-stabilizing capacitor C1 is connected to the output end of the forward double charge pump 4, and the cathode of the bias voltage-stabilizing capacitor C1 is connected to the ground.
The input end of the logic inversion detection circuit 5 is connected to the enable signal input end Ein, the power supply end of the logic inversion detection circuit 5 is connected to the power supply voltage Vcc, and the ground end of the logic inversion detection circuit 5 is connected to the ground.
The accelerated establishing circuit 6 comprises an accelerated pull-up transistor Q2 and a diode D, wherein the grid electrode of the accelerated pull-up transistor Q2 is connected to the output end of the logic turnover detection circuit 5, the source electrode of the accelerated pull-up transistor Q2 is connected to the power supply voltage Vcc, the drain electrode of the accelerated pull-up transistor Q2 is connected to the positive terminal of the diode D, and the negative terminal of the diode D is connected to the output end of the forward double charge pump 4.
In this embodiment, the pull-up acceleration transistor Q2 is a PMOSFET transistor.
Preferably, in this embodiment, the rf switch forward bias acceleration establishing circuit 100 further includes a reference voltage stabilizing capacitor C2, an anode of the reference voltage stabilizing capacitor C2 is connected to the output terminal of the low dropout linear regulator 2, i.e., to the drain of the power transistor Q1, and a second output terminal of the reference voltage stabilizing capacitor is connected to ground.
When the radio frequency switch forward bias acceleration establishing circuit 100 works, after the enable signal of the enable signal input end Ein is inverted, the reference voltage generating circuit 1, the low dropout linear regulator 2 and the oscillator 3 are changed from an off state to a working state, before the three modules are started, the logic inversion detecting circuit 5 outputs a pulse with a certain length as a signal for starting the acceleration establishing circuit 6 because the enable signal is detected to be inverted, in the embodiment, the signal for starting the acceleration establishing circuit 6 is inverted, the acceleration pull-up transistor Q2 for accelerating establishment is conducted, after a voltage drop of a diode D is reduced, the bias voltage stabilizing capacitor 7 of the forward charge pump 4 is charged, so that the bias voltage stabilizing capacitor can obtain a middle level before the low dropout linear regulator 2 and the oscillator 3 work, and the output of the low dropout linear regulator 2 tends to be normal along with the pulse end of the logic inversion detecting circuit 5, the forward double charge pump 4 only needs to raise the level of the output on the basis of the intermediate level.
Referring to fig. 2 and 4, fig. 2 is a schematic diagram illustrating a voltage signal variation of a forward bias accelerated setup circuit of a related art rf switch; fig. 4 is a schematic diagram of a voltage signal variation of the forward bias accelerated setup circuit of the rf switch according to the embodiment of the present invention. As can be seen from a comparison between fig. 2 and fig. 4, the stable output time of the charge pump 4 doubled in the forward direction of the forward bias accelerated establishment circuit of the rf switch of the present invention is significantly shortened, i.e., the response time of the forward bias accelerated establishment circuit of the rf switch and the rf switch is effectively shortened, so as to achieve the purpose of a simple circuit with small delay and fast response.
Since the accelerated pull-up transistor Q2 is equivalent to a source and a drain, the output level is higher than the power supply voltage Vcc after normal operation, and in order to avoid reverse leakage of the accelerated pull-up transistor Q2, the diode D connected in series with the drain provides a unidirectional conduction characteristic for the diode D, and the diode D is in a reverse bias mode during normal operation and cannot pass current, thereby improving the reliability of the circuit.
The embodiment of the present invention further provides a radio frequency switch, which includes the radio frequency switch forward bias accelerated establishment circuit 100 provided in the embodiment of the present invention, and the technical effect achieved by the radio frequency switch is the same as that of the radio frequency switch forward bias accelerated establishment circuit 100, which is not described herein again.
Compared with the prior art, the radio frequency switch forward bias accelerated establishment circuit and the radio frequency switch are provided with the accelerated establishment circuit, the accelerated establishment circuit comprises an accelerated pull-up transistor and a diode, the grid electrode of the accelerated pull-up transistor is connected to the output end of the logic inversion detection circuit, the source electrode of the accelerated pull-up transistor is connected to the power supply voltage, the drain electrode of the accelerated pull-up transistor is connected to the positive electrode end of the diode, the negative electrode end of the diode is connected to the output end of the forward double charge pump, therefore, the logic inversion detection circuit outputs a pulse with a certain length as a signal for starting the acceleration circuit as the inversion of an enable signal is detected, the signal enables the accelerated pull-up transistor established in an inverting way after being inverted, and charges a bias voltage stabilizing capacitor of the charge pump after one diode drop is reduced, the low dropout linear regulator and the oscillator can obtain an intermediate level before working, and the charge pump only needs to lift the output level on the basis of the intermediate level along with the pulse end of the logic turnover detection circuit and the output of the low dropout linear regulator tending to be normal, so that the response time of the forward bias acceleration establishing circuit of the radio frequency switch and the radio frequency switch is effectively shortened, and the purposes of small delay and quick response of a simple circuit are achieved.
It should be noted that the above-mentioned embodiments described with reference to the drawings are only intended to illustrate the present invention and not to limit the scope of the present invention, and it should be understood by those skilled in the art that modifications and equivalent substitutions can be made without departing from the spirit and scope of the present invention. Furthermore, unless the context indicates otherwise, words that appear in the singular include the plural and vice versa. Additionally, all or a portion of any embodiment may be utilized with all or a portion of any other embodiment, unless stated otherwise.
Claims (6)
1. A forward bias accelerated setup circuit for an RF switch, comprising,
an enable signal input terminal for connecting an external enable signal;
the reference voltage generating circuit is used for generating reference voltage, the input end of the reference voltage generating circuit is connected with the enable signal input end, the power supply end of the reference voltage generating circuit is connected with power supply voltage, and the grounding end of the reference voltage generating circuit is connected to the ground;
the input of the low dropout linear regulator is respectively connected to the power supply voltage, the output end of the reference voltage generating circuit and the enable signal input end;
the input end of the oscillator is connected to the enable signal input end, the power supply end of the oscillator is connected to a power supply voltage, and the grounding end of the oscillator is connected to the ground;
a positive double charge pump, a first input end of which is connected to the output end of the oscillator, a second input end of which is connected to the output end of the low dropout regulator, and a ground end of which is connected to ground;
a high voltage bias output connected to an output of the forward double charge pump;
the positive electrode of the bias voltage stabilizing capacitor is connected to the output end of the forward double charge pump, and the negative electrode of the bias voltage stabilizing capacitor is connected to the ground;
the input end of the logic turnover detection circuit is connected to the enable signal input end, the power supply end of the logic turnover detection circuit is connected to the power supply voltage, and the grounding end of the logic turnover detection circuit is connected to the ground; and the number of the first and second groups,
the accelerated setting circuit comprises an accelerated pull-up transistor and a diode, the grid electrode of the accelerated pull-up transistor is connected to the output end of the logic turnover detection circuit, the source electrode of the accelerated pull-up transistor is connected to the power supply voltage, the drain electrode of the accelerated pull-up transistor is connected to the positive end of the diode, and the negative end of the diode is connected to the output end of the forward double charge pump.
2. The radio frequency switch forward bias accelerated setup circuit of claim 1, wherein the accelerated pull-up transistor is a PMOSFET transistor.
3. The radio frequency switch forward bias accelerated setup circuit of claim 1, wherein the low dropout regulator comprises a dual operational amplifier, a power transistor, a first inductor and a second inductor; the drain electrode of the power transistor is sequentially connected with the first inductor and the second inductor in series and then connected to the ground, the drain electrode of the power transistor serves as the output end of the low dropout linear regulator, the source electrode of the power transistor is connected to the power supply voltage, and the grid electrode of the power transistor is connected to the output end of the double operational amplifier; the first operational amplifier equidirectional input end of the dual operational amplifier is connected between the first inductor and the second inductor, the first operational amplifier inverting input end of the dual operational amplifier is connected to the output end of the reference voltage generating circuit, the second operational amplifier equidirectional input end of the dual operational amplifier is connected to the enable signal input end, the power supply end of the dual operational amplifier is connected to the power supply voltage, and the grounding end of the dual operational amplifier is connected to the ground.
4. The forward-bias accelerated setup circuit of claim 3, further comprising a reference voltage stabilizing capacitor, wherein an anode of the reference voltage stabilizing capacitor is connected to the output terminal of the low dropout linear regulator, and a second output terminal of the reference voltage stabilizing capacitor is connected to ground.
5. The forward bias accelerated setup circuit of claim 3, wherein the power transistor is a PMOSFET triode.
6. A radio frequency switch comprising the radio frequency switch forward bias accelerated settling circuit of any of claims 1-5.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122696130.1U CN216390950U (en) | 2021-11-03 | 2021-11-03 | Radio frequency switch forward bias accelerated establishment circuit and radio frequency switch |
| PCT/CN2022/125445 WO2023078064A1 (en) | 2021-11-03 | 2022-10-14 | Forward bias establishment accelerating circuit for radio frequency switch, and radio frequency switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122696130.1U CN216390950U (en) | 2021-11-03 | 2021-11-03 | Radio frequency switch forward bias accelerated establishment circuit and radio frequency switch |
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| Publication Number | Publication Date |
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| CN216390950U true CN216390950U (en) | 2022-04-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202122696130.1U Active CN216390950U (en) | 2021-11-03 | 2021-11-03 | Radio frequency switch forward bias accelerated establishment circuit and radio frequency switch |
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| Country | Link |
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| CN (1) | CN216390950U (en) |
| WO (1) | WO2023078064A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023078063A1 (en) * | 2021-11-03 | 2023-05-11 | 深圳飞骧科技股份有限公司 | Low-dropout linear regulator circuit and radio-frequency switch |
| WO2023078064A1 (en) * | 2021-11-03 | 2023-05-11 | 深圳飞骧科技股份有限公司 | Forward bias establishment accelerating circuit for radio frequency switch, and radio frequency switch |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101340755B (en) * | 2008-08-12 | 2010-12-08 | 深圳市联德合微电子有限公司 | High-speed driving circuit of LED capable of overshooting prevention |
| CN109818588B (en) * | 2017-11-21 | 2023-08-22 | 锐迪科微电子（上海）有限公司 | Radio frequency power amplifier module |
| CN209692727U (en) * | 2019-05-16 | 2019-11-26 | 上海猎芯半导体科技有限公司 | A kind of biasing circuit and frequency communication devices for RF switch |
| CN216390950U (en) * | 2021-11-03 | 2022-04-26 | 深圳飞骧科技股份有限公司 | Radio frequency switch forward bias accelerated establishment circuit and radio frequency switch |
-
2021
- 2021-11-03 CN CN202122696130.1U patent/CN216390950U/en active Active
-
2022
- 2022-10-14 WO PCT/CN2022/125445 patent/WO2023078064A1/en unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023078063A1 (en) * | 2021-11-03 | 2023-05-11 | 深圳飞骧科技股份有限公司 | Low-dropout linear regulator circuit and radio-frequency switch |
| WO2023078064A1 (en) * | 2021-11-03 | 2023-05-11 | 深圳飞骧科技股份有限公司 | Forward bias establishment accelerating circuit for radio frequency switch, and radio frequency switch |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023078064A1 (en) | 2023-05-11 |
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