CN114514610B - 摄像装置 - Google Patents

摄像装置

Info

Publication number
CN114514610B
CN114514610B CN202080070971.7A CN202080070971A CN114514610B CN 114514610 B CN114514610 B CN 114514610B CN 202080070971 A CN202080070971 A CN 202080070971A CN 114514610 B CN114514610 B CN 114514610B
Authority
CN
China
Prior art keywords
light shielding
shielding film
image pickup
film
plan
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202080070971.7A
Other languages
English (en)
Chinese (zh)
Other versions
CN114514610A (zh
Inventor
若林大介
留河优子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Intellectual Property Management Co Ltd
Original Assignee
Panasonic Intellectual Property Management Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Intellectual Property Management Co Ltd filed Critical Panasonic Intellectual Property Management Co Ltd
Publication of CN114514610A publication Critical patent/CN114514610A/zh
Application granted granted Critical
Publication of CN114514610B publication Critical patent/CN114514610B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN202080070971.7A 2019-10-28 2020-09-18 摄像装置 Active CN114514610B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019195650 2019-10-28
JP2019-195650 2019-10-28
PCT/JP2020/035649 WO2021084971A1 (ja) 2019-10-28 2020-09-18 撮像装置

Publications (2)

Publication Number Publication Date
CN114514610A CN114514610A (zh) 2022-05-17
CN114514610B true CN114514610B (zh) 2025-09-05

Family

ID=75715128

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080070971.7A Active CN114514610B (zh) 2019-10-28 2020-09-18 摄像装置

Country Status (4)

Country Link
US (2) US12051710B2 (https=)
JP (1) JP7645477B2 (https=)
CN (1) CN114514610B (https=)
WO (1) WO2021084971A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7645477B2 (ja) 2019-10-28 2025-03-14 パナソニックＩｐマネジメント株式会社 撮像装置
JP7633006B2 (ja) * 2020-07-27 2025-02-19 株式会社ジャパンディスプレイ 検出装置
WO2023106026A1 (ja) * 2021-12-08 2023-06-15 パナソニックＩｐマネジメント株式会社 撮像装置

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* Cited by examiner, † Cited by third party
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JP2011061522A (ja) * 2009-09-10 2011-03-24 Fujifilm Corp Ｍｏｓ型イメージセンサ、ｍｏｓ型イメージセンサの駆動方法、撮像装置
JP2011165783A (ja) * 2010-02-08 2011-08-25 Nikon Corp 固体撮像素子
JP2012114197A (ja) * 2010-11-24 2012-06-14 Panasonic Corp 固体撮像装置及びその製造方法

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US6455836B1 (en) 2000-04-25 2002-09-24 Agilent Technologies, Inc. Metallic optical barrier for photo-detector array is also interconnecting electrode
KR20050106495A (ko) * 2003-03-06 2005-11-09 소니 가부시끼 가이샤 고체촬상소자 및 그 제조방법과 고체촬상소자의 구동방법
JP4729275B2 (ja) 2004-07-16 2011-07-20 富士フイルム株式会社 有機材料層のパターニング方法およびこれを用いた電子デバイス
JP2010056473A (ja) * 2008-08-29 2010-03-11 Fujifilm Corp 固体撮像素子及び撮像装置
JP4887452B2 (ja) * 2010-03-19 2012-02-29 富士フイルム株式会社 光電変換層積層型固体撮像素子及び撮像装置
JP5640630B2 (ja) * 2010-10-12 2014-12-17 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法、及び電子機器
JP2012114838A (ja) * 2010-11-26 2012-06-14 Panasonic Corp 固体撮像装置およびカメラシステム
JP5735318B2 (ja) 2011-03-23 2015-06-17 シャープ株式会社 固体撮像素子および電子情報機器
JP5935237B2 (ja) 2011-03-24 2016-06-15 ソニー株式会社 固体撮像装置および電子機器
JP5814625B2 (ja) * 2011-05-27 2015-11-17 キヤノン株式会社 固体撮像装置、それを用いた撮像システム及び固体撮像装置の製造方法
TW201403804A (zh) 2012-07-05 2014-01-16 Sony Corp 固體攝像裝置及其製造方法、以及電子機器
JP6108172B2 (ja) * 2013-09-02 2017-04-05 ソニー株式会社 固体撮像素子およびその製造方法、並びに電子機器
JP2015119154A (ja) * 2013-12-20 2015-06-25 ソニー株式会社 固体撮像素子、固体撮像素子の製造方法、及び電子機器
JP2016033980A (ja) * 2014-07-31 2016-03-10 キヤノン株式会社 撮像デバイス、撮像装置および撮像システム
JP2016058559A (ja) * 2014-09-10 2016-04-21 ソニー株式会社 固体撮像装置およびその駆動方法、並びに電子機器
CN107113385B (zh) 2015-12-03 2021-02-02 松下知识产权经营株式会社 摄像装置
JP2018046039A (ja) * 2016-09-12 2018-03-22 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および固体撮像装置
JP2019016667A (ja) * 2017-07-05 2019-01-31 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像装置
WO2019012846A1 (ja) * 2017-07-10 2019-01-17 キヤノン株式会社 放射線撮像装置および放射線撮像システム
CN110071126A (zh) * 2018-01-23 2019-07-30 松下知识产权经营株式会社 摄像装置
KR102651605B1 (ko) * 2019-01-11 2024-03-27 삼성전자주식회사 이미지 센서
JP7645477B2 (ja) * 2019-10-28 2025-03-14 パナソニックＩｐマネジメント株式会社 撮像装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011061522A (ja) * 2009-09-10 2011-03-24 Fujifilm Corp Ｍｏｓ型イメージセンサ、ｍｏｓ型イメージセンサの駆動方法、撮像装置
JP2011165783A (ja) * 2010-02-08 2011-08-25 Nikon Corp 固体撮像素子
JP2012114197A (ja) * 2010-11-24 2012-06-14 Panasonic Corp 固体撮像装置及びその製造方法

Also Published As

Publication number Publication date
US12051710B2 (en) 2024-07-30
CN114514610A (zh) 2022-05-17
JP7645477B2 (ja) 2025-03-14
JPWO2021084971A1 (https=) 2021-05-06
WO2021084971A1 (ja) 2021-05-06
US12543394B2 (en) 2026-02-03
US20220216259A1 (en) 2022-07-07
US20240339471A1 (en) 2024-10-10

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