JP7645477B2 - 撮像装置 - Google Patents

撮像装置 Download PDF

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Publication number
JP7645477B2
JP7645477B2 JP2021554177A JP2021554177A JP7645477B2 JP 7645477 B2 JP7645477 B2 JP 7645477B2 JP 2021554177 A JP2021554177 A JP 2021554177A JP 2021554177 A JP2021554177 A JP 2021554177A JP 7645477 B2 JP7645477 B2 JP 7645477B2
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Japan
Prior art keywords
light
shielding film
imaging device
film
peripheral circuit
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JP2021554177A
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Japanese (ja)
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JPWO2021084971A5 (https=
JPWO2021084971A1 (https=
Inventor
大介 若林
優子 留河
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Panasonic Intellectual Property Management Co Ltd
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Panasonic Intellectual Property Management Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2021554177A 2019-10-28 2020-09-18 撮像装置 Active JP7645477B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019195650 2019-10-28
JP2019195650 2019-10-28
PCT/JP2020/035649 WO2021084971A1 (ja) 2019-10-28 2020-09-18 撮像装置

Publications (3)

Publication Number Publication Date
JPWO2021084971A1 JPWO2021084971A1 (https=) 2021-05-06
JPWO2021084971A5 JPWO2021084971A5 (https=) 2022-07-04
JP7645477B2 true JP7645477B2 (ja) 2025-03-14

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ID=75715128

Family Applications (1)

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JP2021554177A Active JP7645477B2 (ja) 2019-10-28 2020-09-18 撮像装置

Country Status (4)

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US (2) US12051710B2 (https=)
JP (1) JP7645477B2 (https=)
CN (1) CN114514610B (https=)
WO (1) WO2021084971A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7645477B2 (ja) 2019-10-28 2025-03-14 パナソニックＩｐマネジメント株式会社 撮像装置
JP7633006B2 (ja) * 2020-07-27 2025-02-19 株式会社ジャパンディスプレイ 検出装置
WO2023106026A1 (ja) * 2021-12-08 2023-06-15 パナソニックＩｐマネジメント株式会社 撮像装置

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012114838A (ja) 2010-11-26 2012-06-14 Panasonic Corp 固体撮像装置およびカメラシステム
JP2012114197A (ja) 2010-11-24 2012-06-14 Panasonic Corp 固体撮像装置及びその製造方法
JP2012204449A (ja) 2011-03-24 2012-10-22 Sony Corp 固体撮像装置および電子機器
WO2014007132A1 (ja) 2012-07-05 2014-01-09 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
JP2015119154A (ja) 2013-12-20 2015-06-25 ソニー株式会社 固体撮像素子、固体撮像素子の製造方法、及び電子機器
JP2016033980A (ja) 2014-07-31 2016-03-10 キヤノン株式会社 撮像デバイス、撮像装置および撮像システム
WO2017094229A1 (ja) 2015-12-03 2017-06-08 パナソニックＩｐマネジメント株式会社 撮像装置
JP2019016667A (ja) 2017-07-05 2019-01-31 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6455836B1 (en) 2000-04-25 2002-09-24 Agilent Technologies, Inc. Metallic optical barrier for photo-detector array is also interconnecting electrode
KR20050106495A (ko) * 2003-03-06 2005-11-09 소니 가부시끼 가이샤 고체촬상소자 및 그 제조방법과 고체촬상소자의 구동방법
JP4729275B2 (ja) 2004-07-16 2011-07-20 富士フイルム株式会社 有機材料層のパターニング方法およびこれを用いた電子デバイス
JP2010056473A (ja) * 2008-08-29 2010-03-11 Fujifilm Corp 固体撮像素子及び撮像装置
JP2011061522A (ja) * 2009-09-10 2011-03-24 Fujifilm Corp Ｍｏｓ型イメージセンサ、ｍｏｓ型イメージセンサの駆動方法、撮像装置
JP2011165783A (ja) * 2010-02-08 2011-08-25 Nikon Corp 固体撮像素子
JP4887452B2 (ja) * 2010-03-19 2012-02-29 富士フイルム株式会社 光電変換層積層型固体撮像素子及び撮像装置
JP5640630B2 (ja) * 2010-10-12 2014-12-17 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法、及び電子機器
JP5735318B2 (ja) 2011-03-23 2015-06-17 シャープ株式会社 固体撮像素子および電子情報機器
JP5814625B2 (ja) * 2011-05-27 2015-11-17 キヤノン株式会社 固体撮像装置、それを用いた撮像システム及び固体撮像装置の製造方法
JP6108172B2 (ja) * 2013-09-02 2017-04-05 ソニー株式会社 固体撮像素子およびその製造方法、並びに電子機器
JP2016058559A (ja) * 2014-09-10 2016-04-21 ソニー株式会社 固体撮像装置およびその駆動方法、並びに電子機器
JP2018046039A (ja) * 2016-09-12 2018-03-22 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および固体撮像装置
WO2019012846A1 (ja) * 2017-07-10 2019-01-17 キヤノン株式会社 放射線撮像装置および放射線撮像システム
CN110071126A (zh) * 2018-01-23 2019-07-30 松下知识产权经营株式会社 摄像装置
KR102651605B1 (ko) * 2019-01-11 2024-03-27 삼성전자주식회사 이미지 센서
JP7645477B2 (ja) * 2019-10-28 2025-03-14 パナソニックＩｐマネジメント株式会社 撮像装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012114197A (ja) 2010-11-24 2012-06-14 Panasonic Corp 固体撮像装置及びその製造方法
JP2012114838A (ja) 2010-11-26 2012-06-14 Panasonic Corp 固体撮像装置およびカメラシステム
JP2012204449A (ja) 2011-03-24 2012-10-22 Sony Corp 固体撮像装置および電子機器
WO2014007132A1 (ja) 2012-07-05 2014-01-09 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
JP2015119154A (ja) 2013-12-20 2015-06-25 ソニー株式会社 固体撮像素子、固体撮像素子の製造方法、及び電子機器
JP2016033980A (ja) 2014-07-31 2016-03-10 キヤノン株式会社 撮像デバイス、撮像装置および撮像システム
WO2017094229A1 (ja) 2015-12-03 2017-06-08 パナソニックＩｐマネジメント株式会社 撮像装置
JP2019016667A (ja) 2017-07-05 2019-01-31 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像装置

Also Published As

Publication number Publication date
US12051710B2 (en) 2024-07-30
CN114514610A (zh) 2022-05-17
JPWO2021084971A1 (https=) 2021-05-06
WO2021084971A1 (ja) 2021-05-06
US12543394B2 (en) 2026-02-03
CN114514610B (zh) 2025-09-05
US20220216259A1 (en) 2022-07-07
US20240339471A1 (en) 2024-10-10

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