CN114503254A - 半导体装置 - Google Patents
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Abstract
在散热片(1)的上表面(1a)设置有半导体芯片(2)。引线端子(5、6)与半导体芯片(2)电连接,且不在散热片(1)的第1侧面(1c)的上方延伸,而是在散热片(1)的第2侧面(1d)的上方延伸。模制树脂(10)对散热片(1)的上表面、第1侧面(1c)以及第2侧面(1d)、半导体芯片(2)以及引线端子(5、6)的一部分进行覆盖。散热片(1)的下表面(1b)从模制树脂(10)露出。设置有因散热片(1)的第1侧面(1c)的下部凹陷而被模制树脂(10)填充的锚固构造(11)。散热片(1)的第2侧面(1d)不存在锚固构造11)。散热片(1)不从模制树脂(10)的侧面(10a)突出。
Description
技术领域
本发明涉及树脂模制封装型的半导体装置。
背景技术
在树脂模制封装型的半导体装置中,在散热片之上设置半导体芯片,通过线材将半导体芯片与引线端子连接,并由模制树脂覆盖它们。在这样的半导体装置中,使用具有因侧面的下部凹陷而被模制树脂填充的锚固构造的散热片。由此,防止散热片从模制树脂脱落,能够确保可靠性。
若在引线端子的下方存在锚固构造,则电感变大,因此,无法将引线端子的阻抗降低至所希望的等级。因此,在将半导体装置用作高频放大器等情况下阻碍高性能化。为了解决该问题,提出通过使用侧面的一部分在引线端子的下方从模制树脂突出的散热片来降低引线端子的阻抗的半导体装置(例如参照专利文献1)。
专利文献1:日本专利第6289792号公报
在模制成型中,使用以半导体装置的引线端子为边界在上下方向上分开的两个模制成型用的模具。从注入口向模具内注入并填充模制树脂之后,将两个模具在上下方向上分离。但是,在散热片的侧面的一部分从模制树脂突出的现有的半导体装置的制造中,由于突出的散热片的一部分成为物理性的障碍,因此,需要形状比通常的模制成型用的模具复杂的成型模具。并且,使模制树脂填充后的半导体装置与成型模具分离的工序也变复杂。因此,存在制造成本上升,生产率恶化,产品成品率恶化这样的问题。
发明内容
本发明是为了解决上述那样的课题而完成的,其目的在于得到能够确保可靠性,且降低引线端子的阻抗,减少制造成本,提高生产率和产品成品率的半导体装置。
本发明所涉及的半导体装置的特征在于,具备:散热片;半导体芯片,其设置于上述散热片的上表面;引线端子,其与上述半导体芯片电连接,且不在上述散热片的第1侧面的上方延伸,而是在上述散热片的第2侧面的上方延伸;以及模制树脂,其对上述散热片的上述上表面、上述第1侧面、上述第2侧面、上述半导体芯片以及上述引线端子的一部分进行覆盖,上述散热片的下表面从上述模制树脂露出,设置有因上述散热片的上述第1侧面的下部凹陷而被上述模制树脂填充的锚固构造,上述散热片的上述第2侧面不存在上述锚固构造,上述散热片不从上述模制树脂的侧面突出。
在本发明中,在散热片的第1侧面设置有锚固构造。由此,能够防止散热片从模制树脂脱落,从而能够确保可靠性。另外,在散热片的有引线端子在上方延伸的第2侧面不存在锚固构造。由此,能够降低引线端子的阻抗。另外,散热片不从模制树脂的侧面突出。由此,能够应用通常的模制成型,因此,能够减少制造成本,提高生产率和产品成品率。
附图说明
图1是表示实施方式1所涉及的半导体装置的俯视图。
图2是沿着图1的I-II剖切的剖视图。
图3是沿着图1的III-IV剖切的剖视图。
图4是表示实施方式1所涉及的半导体装置的变形例的剖视图。
图5是表示安装有实施方式1所涉及的半导体装置的状态的剖视图。
图6是将图5的一部分放大的剖视图。
图7是表示比较例1所涉及的半导体装置的剖视图。
图8是表示比较例2所涉及的半导体装置的剖视图。
图9是表示实施方式2所涉及的半导体装置的剖视图。
图10是表示实施方式3所涉及的半导体装置的剖视图。
具体实施方式
参照附图对实施方式所涉及的半导体装置进行说明。对相同或者对应的构成要素标注相同的附图标记,有时省略重复的说明。
实施方式1
图1是表示实施方式1所涉及的半导体装置的俯视图。图2是沿着图1的I-II剖切的剖视图。图3是沿着图1的III-IV剖切的剖视图。散热片1具有作为安装面的上表面1a、作为散热面的下表面1b、以及相互正交的第1侧面1c和第2侧面1d。附图中,散热片1的上表面1a和下表面1b在Z方向上相互相向。第1侧面1c是在Y方向上相互相向的两个侧面。第2侧面1d是在X方向上相互相向的两个侧面。
半导体芯片2以及电路基板3通过接合件4设置于散热片1的上表面1a。接合件4是Ag膏树脂、焊料、烧结Ag等。半导体芯片2是适于高频功率放大器用途的Si-LDMOS芯片、GaAsFET芯片、GaN HEMT等场效应晶体管。
引线端子5、6配置于散热片1的上方。引线端子5、6不在散热片1的第1侧面1c的上方延伸,而是在散热片1的第2侧面1d的上方延伸。引线端子5通过接合线7而与电路基板3电连接。电路基板3通过接合线8而与半导体芯片2的上表面的栅电极焊盘电连接。引线端子6通过接合线9而与半导体芯片2的上表面的漏电极焊盘电连接。接合线7、8、9由Au、Ag、Al等金属材料构成。
电路基板3设定为相对于半导体芯片2最佳的负载阻抗,以使得半导体装置作为高频功率放大器以高效率动作,而输出高的高频功率。电路基板3设置于半导体芯片2的栅极侧,但不局限于此,也可以设置于半导体芯片2的漏电极焊盘与引线端子6之间,还可以设置于栅极侧和漏极侧双方。
散热片1与半导体芯片2的上表面的源电极电连接,兼作源电极端子。作为散热片1与源电极的连接方法,存在经由从半导体芯片2的上表面贯通至下表面的贯通孔而连接的方法、利用接合线将连接于源电极的焊垫与散热片1连接的方法。
模制树脂10对散热片1的上表面和第1侧面1c以及第2侧面1d、半导体芯片2以及引线端子5、6的一部分进行覆盖。散热片1的所有侧面和上表面被模制树脂10内包,散热片1的只有作为散热面的下表面1b从模制树脂10露出。散热片1不从模制树脂10的侧面10a突出。
从半导体芯片2和电路基板3放出的热,从散热片1的下表面1b向外部传导。因此,优选散热片1具有200W/mK以上的导热率,例如由具有398W/mK这样的高导热率的Cu构成。这样的结构的半导体装置适于输出频率在1GHz以上、1W以上的高频功率。
设置有散热片1的第1侧面1c的下部凹陷而被模制树脂10填充的锚固构造11。散热片1的第2侧面1d不存在锚固构造11。其中,在散热片的通常的制法中,例如通过使用了上模和下模的压缩加工将作为母材的Cu材料以所希望的尺寸成型为散热片。需要能够在压缩加工后使散热片与模具分离,成型后的散热片的形状产生该制约。本实施方式的散热片1的形状能够不使这样的通常的制法变复杂地进行成型。
作为成型半导体装置的外形的方法,通常为如下方法:使用以引线端子5、6为边界而在上下方向上分开的两个模制成型用的模具从预定的注入口注入并填充模制树脂10之后,将该两个成型模具在上下方向(Z方向)上分离。为了容易从成型模具拔出半导体装置,通常在上侧的成型模具和下侧的成型模具均设置锥形。因此,模制树脂10的侧面10a以锥形状倾斜。通常的锥形角为3°~15°左右。
图4是表示实施方式1所涉及的半导体装置的变形例的剖视图。图2中,在引线端子5、6的下方,散热片1的第2侧面1d的下端与模制树脂10的侧面10a的下端处于相同位置。但是,实际上,散热片1需要可靠地纳入模制成型用的下侧模具,需要考虑尺寸公差。应该考虑的尺寸公差主要为散热片1的尺寸、模制成型用的下侧模具的尺寸等。
在通常的制造方法中,若使散热片1的第2侧面1d的下端位于从模制树脂10的侧面10a的下端起向内侧最大为0.2mm的位置,则能够可靠地将散热片1纳入模制成型用的下侧模具。因此,将散热片1的第2侧面1d的下端与模制树脂10的侧面10a的下端的距离D设定为0.2mm以下。
接着,将本实施方式的效果与比较例1、2进行比较来说明。图5是表示安装有实施方式1所涉及的半导体装置的状态的剖视图。图6是将图5的一部分放大的剖视图。散热片1的与半导体芯片2的源电极电连接的下表面1b和导体12连接。半导体装置的引线端子5、6的下表面与用于匹配的基板13电连接。
图7是表示比较例1所涉及的半导体装置的剖视图。在比较例1中,在引线端子5、6的下方也设置有锚固构造11。在比较例1中,在散热片1接地时叠加有散热片1侧的寄生电感成分。因此,无法将引线端子5、6的阻抗降低至所希望的等级。
另一方面,在本实施方式中,在上方有引线端子5、6延伸的散热片1的第2侧面1d不存在锚固构造11,散热片1的第2侧面1d的下端与模制树脂10的侧面10a的下端处于相同位置。由此,能够减小散热片1侧的寄生电感成分的影响,因此,能够降低引线端子5、6的阻抗。另外,在散热片1的第1侧面1c设置有锚固构造11。由此,能够防止散热片1从模制树脂10脱落,能够确保可靠性。
图8是表示比较例2所涉及的半导体装置的剖视图。在比较例2中,散热片1从模制树脂10的侧面突出。因此,需要形状复杂的成型模具,使模制树脂填充后的半导体装置与成型模具分离的工序也变复杂。另一方面,在本实施方式中,散热片1没有从模制树脂10的侧面突出。由此,能够应用通常的模制成型,因此,能够减少制造成本,提高生产率和产品成品率。因此,本实施方式适于应用在要求低价格的市场领域。
接着,为了确认本实施方式的效果而进行了模拟。作为模制树脂10,假定通常的环氧树脂,将相对介电常数设定为3.7。模制树脂10的侧面部的锥形角θ设定为8°,从散热片1的下表面1b至引线端子5、6的下表面为止的距离L设定为1.6mm,散热片1的厚度t设定为1.0mm。此时,能够通过几何学确定基板13的下端部与散热片1的第2侧面1d的下端之间的距离X。在实施方式1中,在D=0的情况下,距离X为0.22mm,在D=0.2mm的情况下,距离X为0.42mm。在比较例1中,距离D为1.16mm,距离X为1.3mm。在比较例2中,距离X为0mm。
表1汇总了计算出各半导体装置的引线端子的阻抗Z的结果。
距离x | 阻抗 | |
实施方式1(D=0) | 0.22mm | 18Ω |
实施方式1(D=0.2mm) | 0.42mm | 20.5Ω |
比较例1 | 1.30mm | 31Ω |
比较例2 | 0.0mm | 14Ω |
比较例1的引线端子5、6的阻抗Z最高,为31Ω,变大至比较例2的2.21倍。若阻抗Z变高,则将半导体装置用作高频功率放大器时成为重要因素的使用频率的频带特性恶化。比较例2的引线端子5、6的阻抗Z最低,为14Ω。但是,如上述那样,比较例2存在半导体装置的制造方法极其困难而且避免不了成本上升这样的问题。
另一方面,在本实施方式中,在D=0的情况下,阻抗Z为18Ω,变大至比较例2的1.29倍,但能够比比较例1大幅减少。另外,在本实施方式中,在D=0.2mm的情况下,引线端子5、6的阻抗Z为20.5Ω。阻抗Z变大至D=0的情况下的1.14倍,但能够得到比比较例1充分低的值。因此,即便在D=0.2mm的情况下也能够抑制使用频率的频带特性的恶化。
其中,距离X根据模制树脂10的侧面10a的锥形角θ、从散热片1的下表面至引线端子5、6的下表面为止的距离L而变化。锥形角θ越小,且距离L越小,距离X越小。距离X越小,越能够减小引线端子5、6的阻抗Z。但是,锥形角θ和距离L是受到制造方法等的制约的设计参数。
实施方式2
图9是表示实施方式2所涉及的半导体装置的剖视图。该剖视图与实施方式1的图2对应。在实施方式1中,散热片1的作为散热面的下表面是平坦的。另一方面,在本实施方式中,在散热片1的下表面设置有凹部14。凹部14被模制树脂10填充。由此,能够更加提高锚固效果。其他结构以及效果与实施方式1相同。
实施方式3
图10是表示实施方式3所涉及的半导体装置的剖视图。该剖视图与实施方式1的图2对应。在本实施方式中,在引线端子5、6的下方,在散热片1的第2侧面1d设置有突起物15。在将散热片1设置于模制成型用的下侧模具内时,通过突起物15发挥自对准功能。因此,散热片1的第2侧面1d的下端与模制树脂10的侧面10a的下端之间的距离D的控制性提高,因此,能够抑制引线端子5、6的阻抗的偏差。其他结构以及效果与实施方式1相同。
附图标记说明
1...散热片;1a...上表面;1b...下表面;1c...第1侧面;1d...第2侧面;2...半导体芯片;5、6...引线端子;10...模制树脂;11...锚固构造;14...凹部;15...突起物。
Claims (5)
1.一种半导体装置,其特征在于,
具备:
散热片;
半导体芯片,其设置于所述散热片的上表面;
引线端子,其与所述半导体芯片电连接,且不在所述散热片的第1侧面的上方延伸,而是在所述散热片的第2侧面的上方延伸;以及
模制树脂,其对所述散热片的所述上表面、所述第1侧面、所述第2侧面、所述半导体芯片以及所述引线端子的一部分进行覆盖,
所述散热片的下表面从所述模制树脂露出,
设置有因所述散热片的所述第1侧面的下部凹陷而被所述模制树脂填充的锚固构造,
所述散热片的所述第2侧面不存在所述锚固构造,
所述散热片不从所述模制树脂的侧面突出。
2.根据权利要求1所述的半导体装置,其特征在于,
所述散热片的所述第2侧面的下端与所述模制树脂的所述侧面的下端的距离为0.2mm以下。
3.根据权利要求1或2所述的半导体装置,其特征在于,
在所述散热片的所述下表面设置有凹部,
所述凹部被所述模制树脂填充。
4.根据权利要求1~3中任一项所述的半导体装置,其特征在于,
在所述散热片的所述第2侧面设置有突起物。
5.根据权利要求1~4中任一项所述的半导体装置,其特征在于,
所述模制树脂的所述侧面倾斜成锥形状。
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