CN114446907A - 一种三维集成tsv针肋微流道主动散热封装方法及结构 - Google Patents
一种三维集成tsv针肋微流道主动散热封装方法及结构 Download PDFInfo
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Abstract
本发明公开一种三维集成TSV针肋微流道主动散热封装方法及结构,属于集成电路封装领域。在裸硅晶圆上刻蚀盲孔,并对其进行电镀填充,制成带TSV铜柱的硅基板晶圆;在硅基板晶圆的底部刻蚀出芯片槽并埋入异构芯片;在硅基板晶圆的底部表面形成RDL和UBM的多层互联金属再布线;减薄硅基板晶圆片的顶部直至漏出TSV铜柱;在减薄的硅基板晶圆上刻蚀出针肋微流道及进出口通道,完成TSV针肋微流道下盖板;重复上述工序制作出TSV针肋微流道上盖板;将TSV针肋微流道上盖板和TSV针肋微流道下盖板进行面对面SoIC键合,实现微流道密封,完成微流道单元;利用晶圆级植球工艺,在重构的多层硅基晶圆的UBM处植上焊球,再对三维集成TSV针肋微流道圆片进行划片形成最终的封装体。
Description
技术领域
本发明涉及集成电路封装技术领域,特别涉及一种三维集成TSV针肋微流道主动散热封装方法及结构。
背景技术
随着微电子技术的发展,多芯片组件(MCM)和3D封装逐渐普及,尽管3D封装能够解决传统2D封装的瓶颈问题,但是随着集成度的增加,高密度集成的有源器件使得3D封装的发热问题变得越来越严重,多层的堆叠带来了封装尺寸缩减得同时其热流密度也急剧增加;而且,复杂的封装结构和材料会导致封装内部因热量分布不均匀而产生的热点,热点的温度通常比封装的平均温度高出很多,温度过高的热点不仅影响芯片的性能,甚至对芯片的可靠性带来严重的威胁。
在3D封装体中,热量主要通过垂直方向传输。常用的三维封装散热方法是将冷板和热沉贴在封装结构背面,将热量传递到系统环控或空气中,这种散热方式中,散热结构不直接与芯片接触,中间隔着厚厚的硅材料和多层芯片,多层材料界面导致复合热阻增大,热量不能及时高效地传递出来,进而导致封装可靠性变差,影响使用。
发明内容
本发明的目的在于提供一种三维集成TSV针肋微流道主动散热封装方法及结构,以解决现有的三维封装散热效率低的问题。
为解决上述技术问题,本发明提供了一种三维集成TSV针肋微流道主动散热封装方法,包括:
提供裸硅晶圆,在裸硅晶圆上刻蚀盲孔,并对其进行电镀填充,制成带TSV铜柱的硅基板晶圆;
在硅基板晶圆的底部刻蚀出芯片槽并埋入异构芯片;
通过晶圆级再布线工艺在硅基板晶圆的底部表面形成RDL和UBM的多层互联金属再布线;
减薄硅基板晶圆片的顶部直至漏出TSV铜柱;
在减薄的硅基板晶圆上刻蚀出针肋微流道及进出口通道,完成TSV针肋微流道下盖板;
重复上述工序,制作出TSV针肋微流道上盖板;
将TSV针肋微流道上盖板和TSV针肋微流道下盖板进行面对面SoIC键合,实现微流道密封,完成微流道单元;
利用晶圆级植球工艺,在重构的多层硅基晶圆的UBM处植上焊球,再对三维集成TSV针肋微流道圆片进行划片形成最终的封装体。
可选的,所述异构芯片的衬底材料包括Si、GaAs、GaN和SiC。
可选的,所述晶圆级再布线工艺是一种钝化层和金属层多次交叠的布线工艺。
可选的,所述多层互联金属再布线的最少包括1层金属层;所述钝化层的厚度大于形成的金属层的厚度,且所述钝化层包覆所述金属层。
可选的,所述金属层的厚度均不小于1μm,所述钝化层的厚度均不小于3μm。
可选的,在UBM处植上焊球的工艺包括晶圆级植球、单芯片植球和印刷锡膏;所述焊球的成分包括SnPb、SnAgCu。
本发明还提供了一种三维集成TSV针肋微流道主动散热封装结构,通过所述的三维集成TSV针肋微流道主动散热封装方法制备而成。
在本发明提供的三维集成TSV针肋微流道主动散热封装方法及结构,具有以下有益效果:
(1)利用硅衬底的异构芯片埋入结构和TSV针肋微流道,使散热微流道与功能芯片底座、TSV针肋直接接触,形成直接散热通道,大大降低热阻,散热更快;
(2)微流道由微米或者毫米级别的TSV针肋和芯片底座构成,冷却剂从进口流入后,在TSV针肋与芯片底座间绕流,直接带走封装体内部芯片发热量,是一种直接、高效的基板级主动散热方式,实现了三维封装系统的多维度、高效率的热管理;
(3)利用埋入硅基板扇出技术实现多芯片三维异构集成,通过面对面SoIC键合技术进行上下盖板连接,TSV热阻比微凸点连接大大降低,进一步提升散热效率。
附图说明
图1是本发明提供的三维集成TSV针肋微流道主动散热封装方法流程示意图;
图2是在裸硅晶圆上刻蚀盲孔的示意图;
图3是对盲孔进行电镀填充制成带TSV铜柱的硅基板晶圆的示意图;
图4是在硅基板晶圆的底部刻蚀出芯片槽的示意图;
图5是将异构芯片通过导热胶固定在芯片槽内的示意图;
图6是在硅基板晶圆的底部表面形成RDL和UBM的多层互联金属再布线的示意图;
图7是减薄硅基板晶圆片的顶部直至漏出TSV铜柱的示意图;
图8是在减薄的硅基板晶圆上刻蚀出针肋微流道及进出口通道制成TSV针肋微流道下盖板示意图;
图9是制作出TSV针肋微流道上盖板的示意图;
图10是将TSV针肋微流道上盖板和TSV针肋微流道下盖板进行面对面SoIC键合技术形成微流道单元示意图;
图11是在重构的多层硅基晶圆的UBM处植上焊球再进行划片形成最终的封装体示意图。
具体实施方式
以下结合附图和具体实施例对本发明提出的一种三维集成TSV针肋微流道主动散热封装方法及结构作进一步详细说明。根据下面说明和权利要求书,本发明的优点和特征将更清楚。需说明的是,附图均采用非常简化的形式且均使用非精准的比例,仅用以方便、明晰地辅助说明本发明实施例的目的。
本发明提供了一种三维集成TSV针肋微流道主动散热封装方法,其流程如图1所示,包括如下步骤:
步骤S11、提供裸硅晶圆,在裸硅晶圆上刻蚀盲孔111,如图2所示;
步骤S12、对所述盲孔111进行电镀填充,制成带TSV铜柱112的硅基板晶圆,如图3所示;
步骤S13、在硅基板晶圆的底部刻蚀出芯片槽113,如图4所示;
步骤S14、将异构芯片114(包括芯片chip1和芯片chip2)通过导热胶固定在所述芯片槽113内,如图5所示;
其中,所述异构芯片114的衬底材料包括Si、GaAs、GaN和SiC,一个异构芯片为一种材料,不同异构芯片可以不同材料,也可以为相同材料。
步骤S15、利用晶圆级再布线工艺在硅基板晶圆的底部表面形成RDL和UBM的多层互联金属再布线115,如图6所示;
所述晶圆级再布线工艺是一种钝化层和金属层多次交叠的布线工艺,所述多层互联金属再布线的最少包括1层金属层;所述钝化层的厚度大于形成的金属层的厚度,且所述钝化层包覆所述金属层,所述金属层的厚度均不小于1μm,所述钝化层的厚度均不小于3μm;
步骤S16、对硅基板晶圆片的顶部进行减薄,直至漏出TSV铜柱112,如图7所示;
步骤S17、在减薄的硅基板晶圆上刻蚀出针肋微流道116及进出口通道(进出口通道很长,与刻槽有明显区别,图中未示出),完成TSV针肋微流道下盖板,如图8所示;
步骤S18、重复上述工序,制作出TSV针肋微流道上盖板,如图9所示;
步骤S19、将如图9所示的TSV针肋微流道上盖板和如图8所示的TSV针肋微流道下盖板进行面对面SoIC键合技术,形成键合面117,实现微流道密封,完成微流道单元,如图10所示;
步骤S20、利用晶圆级植球工艺,在重构的多层硅基晶圆的UBM处植上焊球118;再对三维集成TSV针肋微流道圆片进行划片形成最终的封装体,如图11所示。在UBM处植上焊球的工艺包括晶圆级植球、单芯片植球和印刷锡膏;所述焊球的成分为SnPb或SnAgCu。
上述描述仅是对本发明较佳实施例的描述,并非对本发明范围的任何限定,本发明领域的普通技术人员根据上述揭示内容做的任何变更、修饰,均属于权利要求书的保护范围。
Claims (7)
1.一种三维集成TSV针肋微流道主动散热封装方法,其特征在于,包括:
提供裸硅晶圆,在裸硅晶圆上刻蚀盲孔,并对其进行电镀填充,制成带TSV铜柱的硅基板晶圆;
在硅基板晶圆的底部刻蚀出芯片槽并埋入异构芯片;
通过晶圆级再布线工艺在硅基板晶圆的底部表面形成RDL和UBM的多层互联金属再布线;
减薄硅基板晶圆片的顶部直至漏出TSV铜柱;
在减薄的硅基板晶圆上刻蚀出针肋微流道及进出口通道,完成TSV针肋微流道下盖板;
重复上述工序,制作出TSV针肋微流道上盖板;
将TSV针肋微流道上盖板和TSV针肋微流道下盖板进行面对面SoIC键合,实现微流道密封,完成微流道单元;
利用晶圆级植球工艺,在重构的多层硅基晶圆的UBM处植上焊球,再对三维集成TSV针肋微流道圆片进行划片形成最终的封装体。
2.如权利要求1所述的三维集成TSV针肋微流道主动散热封装方法,其特征在于,所述异构芯片的衬底材料包括Si、GaAs、GaN和SiC。
3.如权利要求1所述的三维集成TSV针肋微流道主动散热封装方法,其特征在于,所述晶圆级再布线工艺是一种钝化层和金属层多次交叠的布线工艺。
4.如权利要求3所述的三维集成TSV针肋微流道主动散热封装方法,其特征在于,所述多层互联金属再布线的最少包括1层金属层;所述钝化层的厚度大于形成的金属层的厚度,且所述钝化层包覆所述金属层。
5.如权利要求4所述的三维集成TSV针肋微流道主动散热封装方法,其特征在于,所述金属层的厚度均不小于1μm,所述钝化层的厚度均不小于3μm。
6.如权利要求1所述的三维集成TSV针肋微流道主动散热封装方法,其特征在于,在UBM处植上焊球的工艺包括晶圆级植球、单芯片植球和印刷锡膏;所述焊球的成分包括SnPb、SnAgCu。
7.一种三维集成TSV针肋微流道主动散热封装结构,其特征在于,通过权利要求1-6任一项所述的三维集成TSV针肋微流道主动散热封装方法制备而成。
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