CN114411246A - micro-LED growth reaction cavity structure, system and method - Google Patents
micro-LED growth reaction cavity structure, system and method Download PDFInfo
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 151
- 238000000034 method Methods 0.000 title claims abstract description 27
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- 229910002804 graphite Inorganic materials 0.000 claims abstract description 18
- 239000010439 graphite Substances 0.000 claims abstract description 18
- 239000012530 fluid Substances 0.000 claims abstract description 6
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims abstract 14
- 239000007789 gas Substances 0.000 claims description 56
- 239000012159 carrier gas Substances 0.000 claims description 33
- 239000012495 reaction gas Substances 0.000 claims description 27
- 239000002994 raw material Substances 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 15
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims description 5
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 5
- 229910052801 chlorine Inorganic materials 0.000 claims description 5
- 239000000460 chlorine Substances 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 5
- 238000002955 isolation Methods 0.000 claims description 5
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- 238000012423 maintenance Methods 0.000 abstract description 2
- 230000008569 process Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
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- 239000004065 semiconductor Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
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- 238000000103 photoluminescence spectrum Methods 0.000 description 3
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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Abstract
The invention discloses a micro-LED growth reaction cavity structure, a micro-LED growth reaction cavity system and a micro-LED growth reaction cavity method. The MOCVD reaction cavity structure comprises a reaction cavity body with a polygonal radial cross section and a polygonal central prism arranged in the reaction cavity body, a polygonal annular flow channel for reaction fluid to pass is formed between the inner wall of the reaction cavity body and the outer wall of the polygonal central prism, at least one square groove is uniformly distributed on the inner wall of each side of the reaction cavity body, and the square groove is used for containing a substrate required by micro-LED growth. The reaction cavity and the polygonal central prism in the MOCVD reaction cavity structure suitable for micro-LED growth provided by the embodiment of the invention are graphite members, and compared with other existing MOCVD reaction cavities, the MOCVD reaction cavity structure has the advantages of better uniformity, higher substrate utilization rate, easiness in maintenance, lower part replacement cost and the like.
Description
Technical Field
The invention particularly relates to a micro-LED growth reaction cavity structure, a micro-LED growth reaction cavity system and a micro-LED growth reaction cavity method, and belongs to the technical field of semiconductors.
Background
The structure of the existing Metal Organic Chemical Vapor Deposition (MOCVD) reaction chamber is designed around a circular graphite tray, a groove in the graphite tray is also circular, and a circular epitaxial wafer is placed in the groove. However, with the rise of micro-LED technology, the whole epitaxial wafer is required to be subjected to chip fabrication and whole transfer, and the application is to directly serve as a light emitting source in a splicing manner, so that the circular epitaxial wafer needs to be processed into a square with the maximum size (a splicing square). In the existing industry, the micro-LED chip area of a 4-inch epitaxial wafer with the diameter of 100mm is 68x68mm, and the effective utilization rate is 59%; to obtain a larger micro-LED effective chip area, a larger size epitaxial wafer process needs to be developed, for example, a 6-inch chip area with a diameter of 150mm can be expanded to 98x98mm, but the effective utilization rate is reduced to 54%. Therefore, the current design of the circular epitaxial wafer, the tray thereof and the reaction chamber leads to the problems of low utilization rate of the circular epitaxial wafer after the micro-LED epitaxial process, serious edge waste and the like, and the growing of the micro-LED also needs high uniformity, so that the technical problem to be solved in the industry is still provided with a more reasonable reaction chamber structure.
Disclosure of Invention
The invention mainly aims to provide a micro-LED growth reaction cavity structure, a micro-LED growth reaction cavity system and a micro-LED growth reaction cavity method, so as to overcome the defects in the prior art.
In order to achieve the purpose, the technical scheme adopted by the invention comprises the following steps:
the embodiment of the invention provides an MOCVD reaction cavity structure suitable for micro-LED growth, which comprises a reaction cavity with a polygonal radial section and a polygonal central prism arranged in the reaction cavity, wherein a polygonal annular flow passage through which reaction fluid can pass is formed between the inner wall of the reaction cavity and the outer wall of the polygonal central prism, and at least one square groove is distributed on the inner wall of each side of the reaction cavity and is used for accommodating a substrate required by micro-LED growth.
The embodiment of the invention also provides a system for growing micro-LEDs, which comprises:
the MOCVD equipment is provided with the MOCVD reaction cavity structure suitable for micro-LED growth;
the heating equipment is at least used for adjusting the temperature of the inner wall of the reaction cavity of the MOCVD reaction cavity structure; and
and the gas inlet equipment is at least used for inputting raw material gas required by micro-LED growth into the reaction cavity of the MOCVD reaction cavity structure.
The embodiment of the invention also provides a method for growing micro-LEDs, which comprises the following steps:
providing said system for growing micro-LEDs;
fixing a substrate required by micro-LED growth in a corresponding square groove on the inner wall of the reaction cavity;
adjusting the temperature of the inner wall of the reaction cavity to the temperature required by micro-LED growth;
raw material gases required by micro-LED growth are input into the reaction cavity, the raw material gases comprise a first reaction gas, a first carrier gas, a second reaction gas and a second carrier gas, and the first reaction gas, the first carrier gas, the second reaction gas and the second carrier gas are sequentially distributed in a layered mode along the direction from the inner wall of the reaction cavity to the outer wall of the corresponding polygonal central prism;
the first reaction gas comprises a group V source gas, the first carrier gas is an isolation carrier gas, and the second reaction gas comprises a group III source gas.
Compared with the prior art, the invention has the advantages that:
1) the reaction cavity and the polygonal central prism in the MOCVD reaction cavity structure suitable for micro-LED growth provided by the embodiment of the invention are graphite members, and compared with other existing MOCVD reaction cavities, the MOCVD reaction cavity structure has the advantages of better uniformity, higher substrate utilization rate, easiness in maintenance, lower part replacement cost and the like; 2) the system for growing the micro-LED provided by the embodiment of the invention can introduce chlorine and can automatically clean the reaction cavity after the epitaxial growth is finished, so that the high cleanness in the reaction cavity is ensured, and the cleanness of the reaction cavity is very important for manufacturing the micro-LED sensitive to particles;
3) according to the system for growing micro-LEDs provided by the embodiment of the invention, the radio frequency heating equipment can accurately control the temperature uniformity of the graphite tray (namely the reaction cavity) by adjusting the position of the external heating wire, and meanwhile, as the substrate is adsorbed in the square groove on the inner wall of the tray through the vacuum system, the heat conduction on the surface of the substrate is better, and the consistency of the wavelength in the growth of the micro-LEDs is better maintained.
Drawings
FIG. 1 is a schematic structural diagram of an MOCVD reaction chamber structure suitable for micro-LED growth according to an exemplary embodiment of the present invention;
FIG. 2 is a front view of an MOCVD reaction chamber structure suitable for micro-LED growth provided in an exemplary embodiment of the present invention;
FIG. 3 is a top view of an MOCVD reaction chamber structure suitable for micro-LED growth provided in an exemplary embodiment of the present invention;
FIG. 4 is a left side view of an MOCVD reaction chamber structure suitable for micro-LED growth provided in an exemplary embodiment of the present invention;
FIG. 5 is a photoluminescence PL spectrum of an epitaxial wafer formed in example 1 of the present invention;
FIG. 6 is a transmission electron micrograph of an epitaxial wafer obtained in example 1 of the present invention.
Detailed Description
In view of the deficiencies in the prior art, the inventors of the present invention have made extensive studies and extensive practices to provide technical solutions of the present invention. The technical solution, its implementation and principles, etc. will be further explained as follows.
Micro LEDs are a new generation of display technology, with higher brightness, better luminous efficiency, but lower power consumption than existing OLED technologies.
Metal organic chemical vapor deposition (metal organic chemical vapor deposition), also known as metal organic compound vapor deposition method, a chemical vapor deposition technique for vapor phase epitaxial growth of thin films by using metal organic thermal decomposition reaction is mainly used in the field of vapor phase growth of compound semiconductors, when the method is used for preparing the thin films, the raw material compound containing compound semiconductor elements is required to be stable and easy to process under normal temperature conditions, and has proper vapor pressure near room temperature, and the by-products of the reaction should not hinder crystal growth and pollute growth layers and other conditions, so metal alkyl or aryl derivatives, hydroxyl derivatives and the like are usually selected as raw materials, and the most important characteristic is that the deposition temperature is low; in addition, as halide raw materials are not adopted, no etching reaction exists in deposition, the application range is wide, and almost all compounds and alloy semiconductors can grow; and the growth temperature range is wide, and the method is suitable for mass production.
The MOCVD reaction cavity structure suitable for micro-LED growth comprises a reaction cavity body with a polygonal radial section and a polygonal central prism arranged in the reaction cavity body, wherein a polygonal annular flow channel for reaction fluid to pass is formed between the inner wall of the reaction cavity body and the outer wall of the polygonal central prism, at least one square groove is distributed on the inner wall of each side of the reaction cavity body, and the square groove is used for accommodating a substrate required by micro-LED growth.
Furthermore, at least the inner wall of the reaction cavity and the outer wall of the polygonal central prism are made of graphite.
Furthermore, the reaction cavity and the polygonal central prism are both made of graphite.
Furthermore, a plurality of square grooves are distributed on the inner wall of each side of the reaction cavity at intervals.
Furthermore, the outer wall of each side of the polygonal central prism is arranged corresponding to the inner wall of one side of the corresponding reaction cavity.
Further, at least one through hole is further formed in the square groove, and the through hole is communicated with negative pressure generating equipment and used for adsorbing and fixing the substrate under the action of negative pressure.
The embodiment of the invention also provides a system for growing micro-LEDs, which comprises:
the MOCVD equipment is provided with the MOCVD reaction cavity structure suitable for micro-LED growth;
the heating equipment is at least used for adjusting the temperature of the inner wall of the reaction cavity of the MOCVD reaction cavity structure; and
and the gas inlet equipment is at least used for inputting raw material gas required by micro-LED growth into the reaction cavity of the MOCVD reaction cavity structure.
Further, the heating device comprises a radio frequency heating device.
Further, the gas inlet equipment is also used for inputting chlorine gas into the reaction cavity.
The embodiment of the invention also provides a method for growing micro-LEDs, which comprises the following steps:
providing said system for growing micro-LEDs;
fixing a substrate required by micro-LED growth in a corresponding square groove on the inner wall of the reaction cavity;
adjusting the temperature of the inner wall of the reaction cavity to the temperature required by micro-LED growth;
raw material gases required by micro-LED growth are input into the reaction cavity, the raw material gases comprise a first reaction gas, a first carrier gas, a second reaction gas and a second carrier gas, and the first reaction gas, the first carrier gas, the second reaction gas and the second carrier gas are sequentially distributed in a layered mode along the direction from the inner wall of the reaction cavity to the outer wall of the corresponding polygonal central prism;
the first reaction gas comprises a group V source gas, the first carrier gas is an isolation carrier gas, and the second reaction gas comprises a group III source gas.
Further, the method for growing micro-LEDs further comprises: and after the epitaxial growth of the micro-LED is finished, chlorine is input into the reaction cavity for self-cleaning.
The technical solution, the implementation process and the principle thereof will be further explained with reference to the drawings.
Referring to fig. 1-4, an MOCVD reaction chamber structure suitable for micro-LED growth includes a reaction chamber 100 having a polygonal radial cross section and a polygonal central prism 200 disposed in the reaction chamber 100, wherein a polygonal annular flow channel 300 for reaction fluid to pass through is formed between an inner wall of the reaction chamber 100 and an outer wall of the polygonal central prism 200, a plurality of square grooves 110 are distributed on an inner wall of each side of the reaction chamber 100, and the square grooves 100 are used for accommodating substrates required for micro-LED growth; and at least one through hole (not shown in the figure) is further arranged in the square groove 110, and the through hole is communicated with negative pressure generating equipment and used for adsorbing and fixing the substrate under the action of negative pressure.
Specifically, at least the inner wall of the reaction chamber 100 and the outer wall of the polygonal central prism 200 are made of graphite, or the reaction chamber 100 and the polygonal central prism 200 are integrally made of graphite.
Specifically, the outer wall of each side of the polygonal central prism 200 is disposed corresponding to the inner wall of one side of the corresponding reaction chamber 100, or the number of the outer wall surfaces of the polygonal central prism 200 may be the same as the number of the inner wall surfaces of the reaction chamber 100, which may be understood as that the number of the sides of the polygonal central prism 200 and the reaction chamber 100 having the polygonal radial cross section is the same, and the radial cross sections of the two are similar polygons.
Specifically, it is understood that the reaction chamber 100 has an annular structure, and the polygonal central prism 200 may be coaxially disposed in the reaction chamber 100.
In particular, a system for growing micro-LEDs, comprising:
an MOCVD apparatus having an MOCVD reaction chamber structure suitable for micro-LED growth as shown in FIGS. 1 to 4;
the heating equipment comprises radio frequency heating equipment and is at least used for adjusting the temperature of the inner wall of the reaction cavity of the MOCVD reaction cavity structure; and
and the gas inlet equipment is at least used for inputting raw material gas required by micro-LED growth into the reaction cavity of the MOCVD reaction cavity structure and also used for inputting chlorine into the reaction cavity.
Specifically, a method for growing micro-LEDs, comprising:
a system for growing micro-LEDs is provided, the system comprises an MOCVD device with an MOCVD reaction chamber structure suitable for micro-LED growth as shown in FIGS. 1-4,
fixing the substrate required for micro-LED growth in the corresponding square groove 110 on the inner wall of the reaction chamber 100;
adjusting the temperature of the inner wall of the reaction cavity 100 to the temperature required by micro-LED growth;
inputting raw material gas required by micro-LED growth into the reaction cavity 100, wherein the raw material gas comprises first reaction gas, first carrier gas, second reaction gas and second carrier gas, and the first reaction gas, the first carrier gas, the second reaction gas and the second carrier gas are sequentially distributed in a layered manner along the direction from the inner wall of the reaction cavity to the outer wall of the corresponding polygonal central prism;
the first reaction gas comprises a group V source gas, the first carrier gas is an isolation carrier gas, and the second reaction gas comprises a group III source gas.
Specifically, the method for growing the micro-LED further comprises the following steps: and after the epitaxial growth of the micro-LED is finished, chlorine gas is input into the reaction cavity 100 for self-cleaning.
Specifically, referring to fig. 3, the first reactant gas, the first carrier gas, the second reactant gas and the second carrier gas are sequentially distributed in layers along the direction from the inner wall of the reaction chamber to the outer wall of the corresponding polygonal central prism, and it can be understood that four layers of polygonal annular flow channels are formed in the polygonal annular flow channel 300 distributed between the inner wall of the reaction chamber 100 and the outer wall of the polygonal central prism 200, that is, a first circulation channel 401, a second circulation channel 402, a third circulation channel 403 and a fourth circulation channel 404 are sequentially arranged along the direction from the inner wall of the reaction chamber to the outer wall of the corresponding polygonal central prism, and the four circulation channels are gas flow channels formed when four groups of gases are introduced, rather than an actual channel structure.
Specifically, in the system for growing micro-LEDs provided by the embodiment of the present invention, the reaction chamber has a polygonal radial cross section, the reaction chamber is entirely made of graphite and is also used as a tray, a square groove is embedded in the inner wall of the reaction chamber and is used for placing a substrate, a through hole is arranged in the square groove, and the through hole is communicated with the negative pressure generating device and is used for adsorbing and fixing the substrate; the substrate is also square, and a plurality of substrates can be sequentially distributed on the rectangular inner wall of the reaction cavity; a polygonal graphite prism is arranged in the center of the reaction cavity, and a flow channel for reaction fluid to pass through is formed between the outer wall of the polygonal graphite prism and the inner wall of the reaction cavity.
Specifically, the heating system of the reaction cavity is suitable for adopting an external radio frequency heating mode to accurately adjust the temperature, the gas inlet system adopts the same polygonal annular separated gas inlet mode, four layers of gas inlet can be generally set, the first layer of gas inlet close to the inner wall of the reaction cavity is V-group source gas, the second layer of gas inlet is isolation carrier gas, the third layer of gas inlet is III-group source gas, and the fourth layer of gas inlet is carrier gas, wherein the flow and the components of each layer of gas are adjustable, and meanwhile, the gas inlet system also comprises chlorine gas.
A method for growing micro-LEDs comprising the process of:
1) an MOCVD tool providing an MOCVD reactor structure suitable for micro-LED growth as shown in fig. 1-4;
2) placing a square sapphire substrate required by micro-LED growth in a corresponding square groove 110 on the inner wall of a reaction cavity 100 with the length of 800mm and the periphery of a hexagon with the side length of 200 mm;
3) respectively adjusting the temperature of the inner wall of the reaction cavity 100 to a temperature required for growing the micro-LED, for example, the growth temperature of uGaN is about 1060 ℃, the growth temperature of nGaN is about 1050 ℃, the growth temperature of a front well quantum well is about 850-880 ℃, the growth temperature of an InGaN of a luminous quantum well is 750 ℃, the growth temperature of a quantum barrier GaN is 850 ℃, and the growth temperature of p-GaN is 960 ℃;
4) raw material gas required for growing micro-LEDs is input into the reaction cavity 100, and the raw material gas respectively passes through the first circulation channel 401 and the second circulation channel402. The third circulation channel 403 and the fourth circulation channel 404 introduce a first reactive gas, a first carrier gas, a second reactive gas and a second carrier gas, wherein the first reactive gas is a group V source gas, such as NH3The first carrier gas is mainly N2And H2The second reactant gas is a group III source gas, such as TMGa, TMIn and TMA1, and the second carrier gas is predominantly N2And H2。
Specifically, the method for growing the micro-LED further comprises the following steps: and after the epitaxial growth of the micro-LED is finished, chlorine gas is input into the reaction cavity 100 for self-cleaning.
Example 1
Specifically, the method for growing the micro-LED comprises the following specific steps:
providing a 100x100mm square sapphire substrate;
firstly, growing a non-doped uGaN buffer layer with the thickness of 1.5um on a square sapphire substrate;
growing a Si-doped n-type GaN layer with the thickness of 2um on the un-doped uGaN buffer layer;
firstly growing a quantum well combination of InGaN/GaN for 6 periods on the Si doped n-type GaN layer to be used as a front well, wherein the quantum well combination is used for releasing stress and serving as an interface for subsequent growth; then, a quantum well barrier combination of InGaN/GaN of 10 periods is grown to serve as a light emitting well, the thickness of the quantum well barrier combination of the InGaN/GaN of a single period is 15nm, the thickness of the InGaN layer is 3nm, and the thickness of the GaN layer is 12 nm;
and finally growing a Mg-doped p-type GaN layer with the thickness of 300 nm.
The photoluminescence PL (Peak Lambda) spectrum of the epitaxial wafer obtained by the system and the method for growing the micro-LED provided by the embodiment of the invention is shown in FIG. 5, and as can be known from FIG. 5, the dominant wavelength of the photoluminescence PL spectrum of the epitaxial wafer is 446.5nm, the wavelength uniformity is 1.9nm, the photoluminescence PL spectrum shows higher uniformity, is very suitable for manufacturing the micro-LED chip and can be utilized by 100%; a TEM image of a Transmission Electron Microscope (TEM) of an epitaxial wafer obtained by the system and the method for growing micro-LEDs provided by the embodiment of the invention is shown in fig. 6, and it can be known from fig. 6 that the interface of the epitaxial wafer is very clear and steep, which shows that the system for growing micro-LEDs has the advantages of fast growth response, short gas switching time, and the like, and has a positive effect and an important significance for reducing particles of micro-LEDs.
The embodiment of the invention starts from the aspect of low utilization rate of micro-LED chip areas, overcomes the defects of the traditional MOCVD structure in micro-LED epitaxy, and provides the structural design of a polygonal MOCVD reaction cavity which is provided with a square substrate for epitaxial growth.
Specifically, the reaction cavity in the MOCVD reaction cavity structure suitable for micro-LED growth provided by the embodiment of the invention is integrally an annular graphite tray, the polygonal central prism is also a graphite component, and most of the structure in the MOCVD reaction cavity structure is the graphite component.
More importantly, the system for growing the micro-LED provided by the embodiment of the invention can introduce chlorine and carry out self-cleaning on the reaction cavity after the epitaxial growth is finished, so that the high cleanness in the reaction cavity is ensured, and the cleanness of the reaction cavity is very important for manufacturing the micro-LED sensitive to particles.
In addition, according to the system for growing micro-LEDs provided by the embodiment of the invention, the radio frequency heating equipment can accurately control the temperature uniformity of the graphite tray (namely, the reaction cavity) by adjusting the position of the external heating wire, and meanwhile, as the substrate is adsorbed in the square groove on the inner wall of the tray through the vacuum system, the heat conduction on the surface of the substrate is better, and the consistency of the wavelength in the growth of the micro-LEDs is better maintained.
In terms of a gas inlet system, the system for growing micro-LEDs provided by the embodiment of the invention has the advantages that the temperature of the area, close to the substrate, of the layer is higher than that of other areas, and the temperature is higher, so that the system has higher capability of decomposing and utilizing ammonia gas than a common reaction chamber, and meanwhile, group III source gas (generally an MO source easy to pre-react) is separated by inert carrier gas, and the concentration can be kept to be reacted before the substrate for a longer distance in the transportation process; the on-way loss of the reaction gas source is controlled by a quadruple gas inlet mode, so that the reaction gas can reach the whole gas flow field and keep the consistency of the on-way concentration field of the reaction gas, the same reaction source gas which can be received by a plurality of substrates in the gas flow direction is ensured, and the thickness of the growth material is more uniform.
It should be understood that the above-mentioned embodiments are merely illustrative of the technical concepts and features of the present invention, which are intended to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and therefore, the protection scope of the present invention is not limited thereby. All equivalent changes and modifications made according to the spirit of the present invention should be covered within the protection scope of the present invention.
Claims (10)
1. An MOCVD reaction cavity structure suitable for micro-LED growth is characterized by comprising a reaction cavity with a polygonal radial cross section and a polygonal central prism arranged in the reaction cavity, wherein a polygonal annular flow channel for reaction fluid to pass is formed between the inner wall of the reaction cavity and the outer wall of the polygonal central prism, and at least one square groove is uniformly distributed on the inner wall of each side of the reaction cavity and used for containing a substrate required by micro-LED growth.
2. The MOCVD reaction chamber structure of claim 1, wherein: at least the inner wall of the reaction cavity and the outer wall of the polygonal central prism are made of graphite.
3. The MOCVD reaction chamber structure of claim 2, wherein: the reaction cavity and the polygonal central prism are both composed of graphite.
4. The MOCVD reaction chamber structure of claim 1, wherein: a plurality of square grooves are distributed on the inner wall of each side of the reaction cavity at intervals.
5. The MOCVD reaction chamber structure of claim 1, wherein: the outer wall of each side of the polygonal central prism is arranged corresponding to the inner wall of one side of the corresponding reaction cavity.
6. The MOCVD reaction chamber structure of claim 1, wherein: the square groove is also internally provided with at least one through hole which is communicated with the negative pressure generating equipment and used for adsorbing and fixing the substrate under the action of negative pressure.
7. A system for growing micro-LEDs, characterized in that it comprises:
MOCVD apparatus having an MOCVD reaction chamber structure suitable for micro-LED growth according to any one of claims 1 to 6;
the heating equipment is at least used for adjusting the temperature of the inner wall of the reaction cavity of the MOCVD reaction cavity structure; and
and the gas inlet equipment is at least used for inputting raw material gas required by micro-LED growth into the reaction cavity of the MOCVD reaction cavity structure.
8. System for growing micro-LEDs according to claim 7, characterized in that: the heating device comprises a radio frequency heating device; and/or the gas inlet equipment is also used for inputting chlorine gas into the reaction cavity.
9. A method for growing micro-LEDs, characterized in that it comprises:
providing a system for growing micro-LEDs according to any of claims 7-8;
fixing a substrate required by micro-LED growth in a corresponding square groove on the inner wall of the reaction cavity;
adjusting the temperature of the inner wall of the reaction cavity to the temperature required by micro-LED growth;
raw material gases required by micro-LED growth are input into the reaction cavity, the raw material gases comprise a first reaction gas, a first carrier gas, a second reaction gas and a second carrier gas, and the first reaction gas, the first carrier gas, the second reaction gas and the second carrier gas are sequentially distributed in a layered mode along the direction from the inner wall of the reaction cavity to the outer wall of the corresponding polygonal central prism;
the first reaction gas comprises a group V source gas, the first carrier gas is an isolation carrier gas, and the second reaction gas comprises a group III source gas.
10. The method for growing micro-LEDs as recited in claim 9, further comprising: and after the epitaxial growth of the micro-LED is finished, chlorine is input into the reaction cavity for self-cleaning.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103806094A (en) * | 2012-11-08 | 2014-05-21 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Epitaxial growth apparatus |
| CN204298458U (en) * | 2014-12-12 | 2015-04-29 | 厦门市三安光电科技有限公司 | A kind of MOCVD reaction chamber |
| CN104746037A (en) * | 2013-12-29 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | A reaction cavity and an MOCVD device |
| CN210429770U (en) * | 2019-11-27 | 2020-04-28 | 无锡升滕半导体技术有限公司 | Vacuum adsorption tray for coating sapphire substrate |
| US20200131621A1 (en) * | 2018-10-24 | 2020-04-30 | Vapor Technologies, Inc. | Plasma corridor for high volume pe-cvd processing |
-
2020
- 2020-10-28 CN CN202011175533.5A patent/CN114411246B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103806094A (en) * | 2012-11-08 | 2014-05-21 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Epitaxial growth apparatus |
| CN104746037A (en) * | 2013-12-29 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | A reaction cavity and an MOCVD device |
| CN204298458U (en) * | 2014-12-12 | 2015-04-29 | 厦门市三安光电科技有限公司 | A kind of MOCVD reaction chamber |
| US20200131621A1 (en) * | 2018-10-24 | 2020-04-30 | Vapor Technologies, Inc. | Plasma corridor for high volume pe-cvd processing |
| CN210429770U (en) * | 2019-11-27 | 2020-04-28 | 无锡升滕半导体技术有限公司 | Vacuum adsorption tray for coating sapphire substrate |
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