CN204298458U - A kind of MOCVD reaction chamber - Google Patents
A kind of MOCVD reaction chamber Download PDFInfo
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- CN204298458U CN204298458U CN201420779949.1U CN201420779949U CN204298458U CN 204298458 U CN204298458 U CN 204298458U CN 201420779949 U CN201420779949 U CN 201420779949U CN 204298458 U CN204298458 U CN 204298458U
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- reaction chamber
- injector
- loader
- housing
- mocvd reaction
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- 238000002488 metal-organic chemical vapour deposition Methods 0.000 title claims abstract description 31
- 238000010438 heat treatment Methods 0.000 claims abstract description 8
- 239000011521 glass Substances 0.000 claims abstract description 7
- 238000009434 installation Methods 0.000 claims abstract description 6
- 239000007789 gas Substances 0.000 claims abstract description 5
- 239000000376 reactant Substances 0.000 claims abstract description 4
- 238000000407 epitaxy Methods 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 3
- 238000012544 monitoring process Methods 0.000 claims description 2
- 230000011514 reflex Effects 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 5
- 238000000034 method Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
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- Chemical Vapour Deposition (AREA)
Abstract
The utility model discloses a kind of MOCVD reaction chamber, comprise housing and be positioned at the well heater of described housing, loader and injector, described housing, well heater, loader and injector are in parcel design, be followed successively by injector, loader, well heater and housing from inside to outside, described housing is connected with bleed line in order to discharge reactant gases; Described injector is positioned at the middle position of described housing, and its sidewall is distributed with a series of jet orifice; Described loader is vertically arranged at the outside of described injector, and its sidewall is distributed with a series of slide glass stationary installation; Described heating unit is positioned at the sidewall of described loader.The MOCVD reaction chamber of the utility model by increasing diameter and the length of reaction chamber (comprising loader), can improve slide counts, realizes output and promotes; Substrate inside and outside growth temperature and the speed difference because epitaxial stress and centrifugal force cause jointly can be improved simultaneously.
Description
Technical field
The utility model relates to technical field of manufacturing semiconductors, is specifically related to a kind of MOCVD reaction chamber.
Background technology
MOCVD device is as the production unit of compound semiconductor materials; a series of features such as high stability, repeatability and mass-producing determine it in compound semiconductor light electrical part and the irreplaceable status of microwave device material; and for MOCVD device, core is for being reaction chamber design.
According to the inlet air flow of reaction gas flow to the orientation relationship with substrate surface, MOCVD device can be divided into horizontal and rectilinear two kinds of reaction chambers.Current commercial MOCVD reaction chamber mainly contains Veeco high-speed rotation type (turbo-disc), Aixtron is closely coupled spray-type (close-coupled showerhead) and the horizontal gas flow technology of multirow star rotating disc type (planetery) and Nippo Sanso.
Above-mentioned several MOCVD reaction chamber design ubiquity reaction chamber is difficult to the bottleneck expanded, output is difficult to lifting, is difficult to meet current semiconductor lighting industry to the great demand that the production capacity of LED promotes and cost declines.This several reaction chamber design makes the double-edged thermograde of substrate very large in addition, and the wavelength uniformity impact caused epi warpage is larger, constrains the further raising of epitaxial wafer wavelength yield.
Summary of the invention
For the problems referred to above, the utility model proposes a kind of novel MOCVD reaction chamber, it can by increasing diameter and the length of reaction chamber (comprising loader), improve slide counts, realize output to promote, substrate inside and outside growth temperature and the speed difference because epitaxial stress and centrifugal force cause jointly can be improved simultaneously.
The technical scheme that the utility model solves the problem is: a kind of MOCVD reaction chamber, comprise housing and be positioned at the well heater of described housing, loader and injector, described housing, well heater, loader and injector are in parcel design, be followed successively by injector, loader, well heater and housing from inside to outside, described housing is connected with bleed line in order to discharge reactant gases; Described injector is positioned at the middle position of described housing, and its sidewall is distributed with a series of jet orifice; Described loader is vertically arranged at the outside of described injector, and its sidewall is distributed with a series of slide glass stationary installation; Described heating unit is positioned at the sidewall of described loader.
Preferably, described housing, well heater, loader and injector, in parcel design, are followed successively by injector, loader, well heater and housing from inside to outside.In certain embodiments, described housing, well heater, loader and injector are concentric tubular structure.The design of this parcel can be formed when epitaxy evenly warm field, to improve wavelength uniformity, improve epitaxial growth temperature homogeneity and wavelength yield.
Preferably, also comprise an epitaxy monitoring and arrange, it is integrated on described injector.
Preferably, described housing is provided with the cooling stave of built-in circulation passage.
Preferably, described injector is cylindrical-shaped structure.
Preferably, the jet orifice of described injector is poroid or strip.
Preferably, described ejector responds source channels and temperature control passage, and wherein reflex response source channels is used for spraying reaction source to reaction chamber, and described temperature control passage is used for passing into temperature control medium to control injector temperature according to parameter.
Preferably, described injector has rotating function.
Preferably, the sidewall of described loader is also provided with a series of hole, to improve the airflow homogeneity of reaction chamber.
Preferably, described loader has rotating function.
Preferably, described well heater adopts resistive heating or radio frequency heating.
The utility model at least possesses beneficial effect below: 1, the design of this novel reaction chamber by increasing diameter, the length of reaction chamber (comprising loader), can improve single stove epitaxial wafer output; 2, substrate inside and outside growth temperature and the speed difference because epitaxial stress and centrifugal force cause jointly can be improved; 3, by vertical placing response chamber, effectively reduce epitaxial wafer grain defect and produce probability, improve epitaxial wafer surface yield.
Other features and advantages of the utility model will be set forth in the following description, and, partly become apparent from specification sheets, or understand by implementing the present invention.Object of the present invention and other advantages realize by structure specifically noted in specification sheets, claims and accompanying drawing and obtain.
Accompanying drawing explanation
Accompanying drawing is used to provide a further understanding of the present invention, and forms a part for specification sheets, together with embodiments of the present invention for explaining the present invention, is not construed as limiting the invention.In addition, accompanying drawing data describe summary, is not draw in proportion.
Fig. 1 is the three-dimensional structure diagram according to a kind of MOCVD reaction chamber of the invention process.
Fig. 2 shows the shell structure of the reaction chamber of MOCVD shown in Fig. 1.
Fig. 3 ~ 4 show two kinds of embodiments of the injector of the reaction chamber of MOCVD shown in Fig. 1.
Fig. 5 shows the loader structure of the reaction chamber of MOCVD shown in Fig. 1.
Fig. 6 shows the heater structure of the reaction chamber of MOCVD shown in Fig. 1.
Embodiment
Be described in detail below in conjunction with the MOCVD reaction chamber of schematic diagram to the utility model, to the utility model, how utilisation technology means solve technical problem whereby, and the implementation procedure reaching technique effect can fully understand and implement according to this.
Fig. 1 is a preferred embodiment of the present utility model, a kind of MOCVD reaction chamber, forms according to the order assembling of injector 1, loader 2, well heater 3 and housing.When carrying out work, be positioned in being faced by slide glass on this loader 2, well heater 3 is connected to circuit, and housing is connected to vacuum system, and injector 1 is connected to reaction source and provides system and outwards spray reaction source.In the present embodiment, housing, well heater 2, loader 2 and injector 1 is concentric tubular structure, forms parcel design.
Please refer to Fig. 2, housing is connected with many bleed lines 5 in order to discharge reactant gases, and in the embodiment that some are better, housing also can arrange the cooling stave 4 of built-in circulation passage, passes into heat-eliminating medium.
Fig. 3 ~ 4 show two kinds of embodiments of the injector 1 of the reaction chamber of MOCVD shown in Fig. 1, and this injector 1 is in cylindric, and sidewall distributes a series of jet orifice 11, and reaction source ejects from inside to outside.This jet orifice 11 can be designed to poroid, strip and other shapes of various profile, or the combination of above shape.Injector 1 has double source passage and temperature control passage in the present embodiment, and double source passage sprays III and V race reaction source respectively, and temperature control passage can pass into concrete temperature control medium (as heat-eliminating medium or heating medium) according to processing parameter and control injector temperature.In some better embodiments, in injector 1, watch-dog can be grown by Integrated design.
Fig. 5 shows the structure of loader 2, and this loader 2 is vertically arranged on the outside of injector 1, and sidewall is distributed with a series of slide glass stationary installation 21, and this stationary installation can be buckle structure, and when slide glass is placed on this loader 2, front is inside.White space between each slide glass stationary installation 21 can design hole 22, to improve airflow homogeneity.
Fig. 6 shows the structure of well heater 3, and this well heater 3 can adopt resistive heating or radio frequency heating, and this well heater 3 can divide many parts to control separately.
In the present embodiment, injector 1 can be realized by Machine Design to rotate or loader 2 rotates or injector and loader rotate simultaneously and maintain and relatively rotate.When the MOCVD reaction chamber of application the present embodiment carries out epitaxy, according to the process requirements of different epitaxial film, the slewing rate of injector and loader can be regulated separately, improve the epi warpage and stress that cause because of epitaxial wafer rotary centrifugal force.
Claims (10)
1. a MOCVD reaction chamber, comprise housing and be positioned at the well heater of described housing, loader and injector, described housing, well heater, loader and injector are in parcel design, be followed successively by injector, loader, well heater and housing from inside to outside, described housing is connected with bleed line in order to discharge reactant gases; Described injector is positioned at the middle position of described housing, and its sidewall is distributed with a series of jet orifice; Described loader is vertically arranged at the outside of described injector, and its sidewall is distributed with a series of slide glass stationary installation; Described heating unit is positioned at the sidewall of described loader.
2. MOCVD reaction chamber according to claim 1, is characterized in that: also comprise an epitaxy monitoring and arrange, it is integrated on described injector.
3. MOCVD reaction chamber according to claim 1, is characterized in that: described housing is provided with the cooling stave of built-in circulation passage.
4. MOCVD reaction chamber according to claim 1, is characterized in that: described injector is cylindrical-shaped structure.
5. MOCVD reaction chamber according to claim 1, is characterized in that: the jet orifice of described injector is poroid or strip.
6. MOCVD reaction chamber according to claim 1, it is characterized in that: described ejector responds source channels and temperature control passage, wherein reflex response source channels is used for spraying reaction source to reaction chamber, and described temperature control passage is used for passing into temperature control medium to control injector temperature according to parameter.
7. MOCVD reaction chamber according to claim 1, is characterized in that: described injector has rotating function.
8. MOCVD reaction chamber according to claim 1, is characterized in that: described loader is telescoping structure.
9. MOCVD reaction chamber according to claim 1, is characterized in that: the sidewall of described loader is also provided with a series of hole, to improve the airflow homogeneity of reaction chamber.
10. MOCVD reaction chamber according to claim 1, is characterized in that: described loader has rotating function.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420779949.1U CN204298458U (en) | 2014-12-12 | 2014-12-12 | A kind of MOCVD reaction chamber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420779949.1U CN204298458U (en) | 2014-12-12 | 2014-12-12 | A kind of MOCVD reaction chamber |
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| Publication Number | Publication Date |
|---|---|
| CN204298458U true CN204298458U (en) | 2015-04-29 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201420779949.1U Active CN204298458U (en) | 2014-12-12 | 2014-12-12 | A kind of MOCVD reaction chamber |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114411246A (en) * | 2020-10-28 | 2022-04-29 | 江苏第三代半导体研究院有限公司 | micro-LED growth reaction cavity structure, system and method |
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2014
- 2014-12-12 CN CN201420779949.1U patent/CN204298458U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114411246A (en) * | 2020-10-28 | 2022-04-29 | 江苏第三代半导体研究院有限公司 | micro-LED growth reaction cavity structure, system and method |
| CN114411246B (en) * | 2020-10-28 | 2023-05-16 | 江苏第三代半导体研究院有限公司 | micro-LED growth reaction cavity structure, micro-LED growth reaction cavity system and micro-LED growth reaction cavity method |
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