CN114411246B - micro-LED growth reaction cavity structure, micro-LED growth reaction cavity system and micro-LED growth reaction cavity method - Google Patents

micro-LED growth reaction cavity structure, micro-LED growth reaction cavity system and micro-LED growth reaction cavity method Download PDF

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CN114411246B
CN114411246B CN202011175533.5A CN202011175533A CN114411246B CN 114411246 B CN114411246 B CN 114411246B CN 202011175533 A CN202011175533 A CN 202011175533A CN 114411246 B CN114411246 B CN 114411246B
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reaction cavity
gas
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reaction
wall
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CN114411246A (en
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王国斌
王建峰
徐科
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Jiangsu Third Generation Semiconductor Research Institute Co Ltd
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Jiangsu Third Generation Semiconductor Research Institute Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention discloses a micro-LED growth reaction cavity structure, a micro-LED growth reaction cavity system and a micro-LED growth reaction cavity method. The MOCVD reaction cavity structure comprises a reaction cavity with a polygonal radial section and a polygonal central prism arranged in the reaction cavity, a polygonal annular flow passage through which reaction fluid can pass is formed between the inner wall of the reaction cavity and the outer wall of the polygonal central prism, and at least one square groove is distributed on the inner wall of each side of the reaction cavity and used for accommodating a substrate required by micro-LED growth. The reaction cavity and the polygonal central prism in the MOCVD reaction cavity structure suitable for micro-LED growth are graphite components, and compared with other MOCVD reaction cavities in the prior art, the MOCVD reaction cavity structure has the advantages of being better in uniformity, higher in substrate utilization rate, easy to maintain, lower in component replacement cost and the like.

Description

micro-LED growth reaction cavity structure, micro-LED growth reaction cavity system and micro-LED growth reaction cavity method
Technical Field
The invention particularly relates to a micro-LED growth reaction cavity structure, a micro-LED growth reaction cavity system and a micro-LED growth reaction cavity method, and belongs to the technical field of semiconductors.
Background
The structure of the existing Metal Organic Chemical Vapor Deposition (MOCVD) reaction chamber is designed around a circular graphite tray, grooves in the graphite tray are also circular, and circular epitaxial wafers are placed. However, with the rise of micro-LED technology, chip fabrication and overall transfer of the whole epitaxial wafer are required, and the application is to directly use the wafer as a light-emitting source in a spliced form, so that at this time, a circular epitaxial wafer needs to be processed into a square with the largest dimension (inscribed square). In the prior industry, the micro-LED chip area of a 4-inch epitaxial wafer with the diameter of 100mm is 68x68mm, and the effective utilization rate is 59%; to obtain a larger micro-LED active chip area, a larger-sized epitaxial wafer process needs to be developed, for example, a 6-inch chip area with a diameter of 150mm can be expanded to 98x98mm, but the effective utilization is reduced to 54%. Therefore, the current round epitaxial wafer, the tray and the reaction cavity design thereof lead to the problems of low utilization rate, serious edge waste and the like of the round epitaxial wafer after the micro-LED epitaxial process, and the growing micro-LED also needs high uniformity, so that the technical problem to be solved still in the industry is still needed.
Disclosure of Invention
The invention mainly aims to provide a micro-LED growing reaction cavity structure, a micro-LED growing reaction cavity system and a micro-LED growing reaction cavity method, so as to overcome the defects in the prior art.
In order to achieve the purpose of the invention, the technical scheme adopted by the invention comprises the following steps:
the embodiment of the invention provides an MOCVD reaction cavity structure suitable for micro-LED growth, which comprises a reaction cavity with a polygonal radial section and a polygonal central prism arranged in the reaction cavity, wherein a polygonal annular flow passage through which reaction fluid can pass is formed between the inner wall of the reaction cavity and the outer wall of the polygonal central prism, and at least one square groove is distributed on the inner wall of each side of the reaction cavity and used for accommodating a substrate required for micro-LED growth.
The embodiment of the invention also provides a system for growing micro-LEDs, which comprises:
the MOCVD equipment is provided with the MOCVD reaction cavity structure suitable for micro-LED growth;
the heating equipment is at least used for adjusting the temperature of the inner wall of the reaction cavity of the MOCVD reaction cavity structure; and
and the air inlet equipment is at least used for inputting raw material gas required by micro-LED growth into the reaction cavity of the MOCVD reaction cavity structure.
The embodiment of the invention also provides a method for growing micro-LEDs, which comprises the following steps:
providing the system for growing micro-LEDs;
fixing a substrate required for growing micro-LEDs in a corresponding square groove on the inner wall of a reaction cavity;
adjusting the temperature of the inner wall of the reaction cavity to the temperature required by micro-LED growth;
inputting raw material gas required by micro-LED growth into the reaction cavity, wherein the raw material gas comprises a first reaction gas, a first carrier gas, a second reaction gas and a second carrier gas, and the first reaction gas, the first carrier gas, the second reaction gas and the second carrier gas are sequentially distributed in layers along the direction from the inner wall of the reaction cavity to the outer wall of the corresponding polygonal central prism;
the first reaction gas comprises a V group source gas, the first carrier gas is an isolation carrier gas, and the second reaction gas comprises a III group source gas.
Compared with the prior art, the invention has the advantages that:
1) The reaction cavity and the polygonal central prism in the MOCVD reaction cavity structure suitable for micro-LED growth are graphite components, and compared with other MOCVD reaction cavities in the prior art, the MOCVD reaction cavity structure has the advantages of better uniformity, higher substrate utilization rate, easiness in maintenance, lower component replacement cost and the like; 2) The system for growing micro-LEDs provided by the embodiment of the invention can introduce chlorine, and can self-clean the reaction cavity after the epitaxial growth is finished, so that the high cleaning in the reaction cavity is ensured, and the cleaning of the reaction cavity is critical to the manufacturing of micro-LEDs sensitive to particles;
3) According to the system for growing micro-LEDs provided by the embodiment of the invention, the temperature uniformity of the graphite tray (namely the reaction cavity) can be precisely controlled by adjusting the position of the external heating wire through the radio frequency heating equipment, and meanwhile, as the substrate is adsorbed in the square groove on the inner wall of the tray through the vacuum system, the heat conduction on the surface of the substrate is better, and the consistency of the wavelength in the growth of the micro-LEDs is better maintained.
Drawings
FIG. 1 is a schematic structural view of an MOCVD reaction chamber structure suitable for micro-LED growth according to an exemplary embodiment of the present invention;
FIG. 2 is a front view of an MOCVD reaction chamber structure adapted for micro-LED growth according to an exemplary embodiment of the present invention;
FIG. 3 is a top view of a MOCVD reaction chamber structure adapted for micro-LED growth in accordance with an exemplary embodiment of the present invention;
FIG. 4 is a left side view of an MOCVD reaction chamber structure adapted for micro-LED growth according to an exemplary embodiment of the present invention;
FIG. 5 is a photoluminescence PL spectrum of an epitaxial wafer formed by the method of example 1 of the present invention;
fig. 6 is a transmission electron microscope image of an epitaxial wafer obtained in example 1 of the present invention.
Detailed Description
In view of the shortcomings in the prior art, the inventor of the present invention has long studied and practiced in a large number of ways to propose the technical scheme of the present invention. The technical scheme, the implementation process, the principle and the like are further explained as follows.
Micro LEDs are a new generation of display technology, and have higher brightness, better luminous efficiency and lower power consumption than the existing OLED technology.
The metal organic chemical vapor deposition (metal organic chemical vapour deposition) is also called as an organic metal compound vapor deposition method, and a chemical vapor deposition technology for vapor phase epitaxy growth film by utilizing organic metal thermal decomposition reaction is mainly used in the vapor phase growth field of compound semiconductors, when the film is prepared by adopting the method, the film is used as a raw material compound containing a compound semiconductor element, the film must be stable and easy to process under normal temperature conditions, and has proper vapor pressure near the room temperature, and byproducts of the reaction should not prevent crystal growth and should not pollute the growth layer and other conditions, so that metal alkyl or aryl derivatives, hydroxyl derivatives and the like are usually selected as raw materials, and the main characteristics of the film are that the deposition temperature is low; in addition, since the halide raw material is not adopted, etching reaction does not exist in the deposition, the application range is wide, and almost all compound and alloy semiconductors can be grown; and the growth temperature range is wide, and the method is suitable for mass production.
The MOCVD reaction cavity structure suitable for micro-LED growth comprises a reaction cavity with a polygonal radial section and a polygonal central prism arranged in the reaction cavity, wherein a polygonal annular flow passage through which reaction fluid can pass is formed between the inner wall of the reaction cavity and the outer wall of the polygonal central prism, and at least one square groove is distributed on the inner wall of each side of the reaction cavity and used for accommodating a substrate required for micro-LED growth.
Further, at least the inner wall of the reaction cavity and the outer wall of the polygonal central prism are made of graphite.
Furthermore, the reaction cavity and the polygonal central prism are both composed of graphite.
Furthermore, a plurality of square grooves are distributed on the inner wall of each side of the reaction cavity at intervals.
Further, the outer wall of each side of the polygonal central prism is correspondingly arranged with the inner wall of one side of the corresponding reaction cavity.
Further, at least one through hole is further formed in the square groove, and the through hole is communicated with negative pressure generating equipment and used for adsorbing and fixing the substrate through negative pressure.
The embodiment of the invention also provides a system for growing micro-LEDs, which comprises:
the MOCVD equipment is provided with the MOCVD reaction cavity structure suitable for micro-LED growth;
the heating equipment is at least used for adjusting the temperature of the inner wall of the reaction cavity of the MOCVD reaction cavity structure; and
and the air inlet equipment is at least used for inputting raw material gas required by micro-LED growth into the reaction cavity of the MOCVD reaction cavity structure.
Further, the heating device comprises a radio frequency heating device.
Further, the air inlet device is also used for inputting chlorine into the reaction cavity.
The embodiment of the invention also provides a method for growing micro-LEDs, which comprises the following steps:
providing the system for growing micro-LEDs;
fixing a substrate required for growing micro-LEDs in a corresponding square groove on the inner wall of a reaction cavity;
adjusting the temperature of the inner wall of the reaction cavity to the temperature required by micro-LED growth;
inputting raw material gas required by micro-LED growth into the reaction cavity, wherein the raw material gas comprises a first reaction gas, a first carrier gas, a second reaction gas and a second carrier gas, and the first reaction gas, the first carrier gas, the second reaction gas and the second carrier gas are sequentially distributed in layers along the direction from the inner wall of the reaction cavity to the outer wall of the corresponding polygonal central prism;
the first reaction gas comprises a V group source gas, the first carrier gas is an isolation carrier gas, and the second reaction gas comprises a III group source gas.
Further, the method for growing micro-LEDs further comprises: after the epitaxial growth of the micro-LED is finished, chlorine is input into the reaction cavity for self-cleaning.
The technical scheme, the implementation process and the principle thereof are further explained with reference to the attached drawings.
Referring to fig. 1 to 4, an MOCVD reaction chamber structure suitable for micro-LED growth includes a reaction chamber 100 having a polygonal radial section and a polygonal central prism 200 disposed in the reaction chamber 100, wherein a polygonal annular flow channel 300 through which a reaction fluid can pass is formed between an inner wall of the reaction chamber 100 and an outer wall of the polygonal central prism 200, and a plurality of square grooves 110 are distributed on each side inner wall of the reaction chamber 100, wherein the square grooves 100 are used for accommodating substrates required for micro-LED growth; and at least one through hole (not shown) is further provided in the square groove 110, and the through hole is communicated with a negative pressure generating device for adsorbing and fixing the substrate by negative pressure.
Specifically, at least the inner wall of the reaction chamber 100 and the outer wall of the polygonal central prism 200 are made of graphite, or the reaction chamber 100 and the polygonal central prism 200 are integrally formed of graphite.
Specifically, the outer wall of each side of the polygonal central prism 200 is disposed corresponding to the inner wall of one side of the corresponding reaction chamber 100, or the number of the outer wall surfaces of the polygonal central prism 200 may be the same as the number of the inner wall surfaces of the reaction chamber 100, and it is understood that the number of the sides of the polygonal central prism 200 and the reaction chamber 100 having a polygonal radial cross section is the same, and the radial cross sections of the two sides are similar polygons.
Specifically, it is understood that the reaction chamber 100 has a ring structure, and the polygonal central prism 200 may be coaxially disposed in the reaction chamber 100.
Specifically, a system for growing micro-LEDs, comprising:
MOCVD equipment having a MOCVD reaction chamber structure suitable for micro-LED growth as shown in fig. 1 to 4;
the heating equipment comprises radio frequency heating equipment and is at least used for adjusting the temperature of the inner wall of the reaction cavity of the MOCVD reaction cavity structure; and
and the air inlet equipment is at least used for inputting raw material gas required by micro-LED growth into the reaction cavity of the MOCVD reaction cavity structure and is also used for inputting chlorine into the reaction cavity.
Specifically, a method for growing micro-LEDs, comprising:
there is provided a system for growing micro-LEDs, the system comprising an MOCVD equipment having an MOCVD reaction chamber structure suitable for micro-LED growth as shown in fig. 1 to 4,
fixing a substrate required for growing micro-LEDs in corresponding square grooves 110 on the inner wall of the reaction cavity 100;
adjusting the temperature of the inner wall of the reaction cavity 100 to a temperature required for growing micro-LEDs;
inputting raw material gas required by micro-LED growth into the reaction cavity 100, wherein the raw material gas comprises a first reaction gas, a first carrier gas, a second reaction gas and a second carrier gas, and the first reaction gas, the first carrier gas, the second reaction gas and the second carrier gas are sequentially distributed in layers along the direction from the inner wall of the reaction cavity to the outer wall of the corresponding polygonal central prism;
the first reaction gas comprises a V group source gas, the first carrier gas is an isolation carrier gas, and the second reaction gas comprises a III group source gas.
Specifically, the method for growing micro-LEDs further comprises: after the epitaxial growth of micro-LEDs is completed, chlorine is input into the reaction chamber 100 for self-cleaning.
Specifically, referring to fig. 3, the first reaction gas, the first carrier gas, the second reaction gas, and the second carrier gas are sequentially layered in a direction from the inner wall of the reaction chamber toward the outer wall of the corresponding polygonal central prism, and it is understood that four layers of polygonal annular channels are formed in the polygonal annular channel 300 between the inner wall of the reaction chamber 100 and the outer wall of the polygonal central prism 200, that is, the first circulation channel 401, the second circulation channel 402, the third circulation channel 403, and the fourth circulation channel 404 are sequentially disposed in a direction from the inner wall of the reaction chamber toward the outer wall of the corresponding polygonal central prism, and the four circulation channels are airflow channels formed when four groups of gases are introduced, not the actual channel structure.
Specifically, in the system for growing micro-LEDs provided by the embodiment of the invention, the reaction cavity is of a polygonal structure with a radial section, the whole reaction cavity is graphite and is also used as a tray, a square groove is embedded in the inner wall of the reaction cavity and is used for placing a substrate, a through hole is arranged in the square groove, and the through hole is communicated with negative pressure generating equipment and is used for adsorbing and fixing the substrate; the substrates are square, and a plurality of substrates can be sequentially arranged on the rectangular inner wall of the reaction cavity; the center of the reaction cavity is provided with a polygonal graphite prism, and a flow passage through which the reaction fluid can pass is formed between the outer wall of the polygonal graphite prism and the inner wall of the reaction cavity.
Specifically, the heating system of the reaction cavity is preferably an external radio frequency heating mode to accurately adjust the temperature, the air inlet system adopts an identical polygonal annular separation air inlet mode, four layers of air inlet can be generally arranged, the first layer of air inlet close to the inner wall of the reaction cavity is V-group source gas, the second layer of air inlet is isolation carrier gas, the third layer of air inlet is III-group source gas, the fourth layer of air inlet is carrier gas, the flow and components of each layer of air are adjustable, and meanwhile, the air inlet provided by the air inlet system also comprises chlorine.
A method for growing micro-LEDs, comprising the following process:
1) Providing an MOCVD apparatus of MOCVD reaction chamber structure suitable for micro-LED growth as shown in FIGS. 1-4;
2) Placing a square sapphire substrate required for micro-LED growth in a corresponding square groove 110 on the inner wall of a reaction cavity 100 with the length of 800mm and the periphery of 200mm hexagon;
3) The temperature of the inner wall of the reaction chamber 100 is respectively adjusted to the temperature required for growing micro-LEDs, for example, the growth temperature of uGaN is about 1060 ℃, the growth temperature of nGaN is about 1050 ℃, the growth temperature of front-well quantum well is about 850-880 ℃, the growth temperature of light-emitting quantum well InGaN is 750 ℃, the growth temperature of quantum barrier GaN is 850 ℃, and the growth temperature of p-GaN is 960 ℃;
4) Feeding a raw material gas required for growing micro-LEDs into the reaction chamber 100, the raw material gas including a first reactive gas, a first carrier gas, a second reactive gas and a second carrier gas, which are introduced through a first circulation channel 401, a second circulation channel 402, a third circulation channel 403 and a fourth circulation channel 404, respectively, the first reactive gas being a group V source gas, such as NH 3 The first carrier gas is mainly N 2 And H 2 The second reactive gas is a group III source gas, such as TMGa, TMIn, and TMA1, the second carrier gas is predominantly N 2 And H 2 。
Specifically, the method for growing micro-LEDs further comprises: after the epitaxial growth of micro-LEDs is completed, chlorine is input into the reaction chamber 100 for self-cleaning.
Example 1
In particular, the method for growing micro-LEDs comprises the specific steps of:
providing a square sapphire substrate with the thickness of 100mm being 100;
firstly, growing a non-doped uGaN buffer layer with the thickness of 1.5um on a square sapphire substrate;
growing a Si doped n-type GaN layer with the thickness of 2um on the undoped uGaN buffer layer;
firstly growing a quantum well combination of InGaN/GaN with 6 periods on the Si doped n-type GaN layer to serve as a front well, wherein the quantum well combination is used for releasing stress and making an interface for subsequent growth; then, growing a quantum well barrier combination of InGaN/GaN with 10 periods as a light-emitting well, wherein the thickness of the quantum well barrier combination of InGaN/GaN with a single period is 15nm, the thickness of an InGaN layer is 3nm, and the thickness of a GaN layer is 12nm;
finally, a Mg doped p-type GaN layer with the thickness of 300nm is grown.
The photoluminescence PL (Peak Lambda) spectrum of the epitaxial wafer obtained by the system and the method for growing micro-LEDs provided by the embodiment of the invention is shown in fig. 5, and as can be known from fig. 5, the photoluminescence PL spectrum of the epitaxial wafer has a dominant wavelength of 446.5nm and wavelength uniformity of 1.9nm, shows higher uniformity, is very suitable for manufacturing chips of micro-LEDs, and can be utilized by 100%; the TEM image of the epitaxial wafer obtained by the system and the method for growing micro-LEDs provided by the embodiment of the invention is shown in figure 6, and the figure 6 shows that the growing interface of the epitaxial wafer is very clear and steep, which indicates that the system for growing micro-LEDs has the advantages of quick growth response, short gas switching time and the like, and has positive effect and important significance for reducing particles of micro-LEDs.
The embodiment of the invention overcomes the defects of the traditional MOCVD structure in micro-LED epitaxy from the aspect of low utilization rate of micro-LED chip area, and provides the structural design of the polygonal MOCVD reaction cavity matched with the epitaxial growth of a square substrate.
Specifically, in the MOCVD reaction cavity structure suitable for micro-LED growth, the whole reaction cavity is an annular graphite tray, the polygonal central prism is also a graphite member, and most of the structures in the MOCVD reaction cavity structure are graphite members.
More importantly, the system for growing micro-LEDs provided by the embodiment of the invention can introduce chlorine gas, and can self-clean the reaction cavity after epitaxial growth is finished, so that the high cleaning in the reaction cavity is ensured, and the cleaning of the reaction cavity is critical to the manufacturing of micro-LEDs sensitive to particles.
In addition, according to the system for growing micro-LEDs provided by the embodiment of the invention, the radio frequency heating equipment can accurately control the temperature uniformity of the graphite tray (namely the reaction cavity) by adjusting the position of the external heating wire, and meanwhile, as the substrate is adsorbed in the square groove on the inner wall of the tray through the vacuum system, the heat conduction on the surface of the substrate is better, and the consistency of the wavelength in the growth of the micro-LEDs is better maintained.
In the aspect of an air inlet system, the temperature of a region close to a substrate placement layer of the system for growing micro-LEDs is higher than that of other regions, and the temperature is higher, so that the system has higher capability of decomposing and utilizing ammonia than a common reaction cavity, and meanwhile, group III source gases (generally MO sources which are easy to pre-react) are separated by inert carrier gases, so that the concentration can be kept over a longer distance to the upper part of the substrate to be reacted in the transportation process; the along-path loss of the reaction gas source is controlled by a quadruple air inlet mode, so that the reaction gas can reach the whole gas flow field and maintain the consistency of the reaction gas along-path concentration field, the same reaction source gas which can be received by a plurality of substrates in the gas flow direction is ensured, and the thickness of the growth material is further more uniform.
It should be understood that the above embodiments are merely for illustrating the technical concept and features of the present invention, and are intended to enable those skilled in the art to understand the present invention and implement the same according to the present invention without limiting the scope of the present invention. All equivalent changes or modifications made in accordance with the spirit of the present invention should be construed to be included in the scope of the present invention.

Claims (10)

1. The MOCVD reaction cavity structure suitable for micro-LED growth is characterized by comprising a reaction cavity with a polygonal radial section and polygonal central prisms arranged in the reaction cavity, wherein the outer wall of each side of each polygonal central prism is arranged corresponding to the inner wall of one side of the corresponding reaction cavity, a polygonal annular flow passage through which reaction fluid can pass is formed between the inner wall of the reaction cavity and the outer wall of each polygonal central prism, and at least one square groove is distributed on the inner wall of each side of the reaction cavity and used for accommodating a substrate required by micro-LED growth;
the polygonal annular flow channel comprises a first circulation channel, a second circulation channel, a third circulation channel and a fourth circulation channel which are sequentially arranged along the direction from the inner wall of the reaction cavity to the outer wall of the corresponding polygonal central prism, wherein the first circulation channel is used for introducing first reaction gas, the second circulation channel is used for introducing first carrier gas, the third circulation channel is used for introducing second reaction gas, the fourth circulation channel is used for introducing second carrier gas,
wherein the first reactive gas comprises a group V source gas, the second reactive gas comprises a group III source gas, and the first carrier gas is mainly N 2 And H 2 。
2. The MOCVD reactor structure according to claim 1, wherein: at least the inner wall of the reaction cavity and the outer wall of the polygonal central prism are made of graphite.
3. The MOCVD reactor structure according to claim 2, wherein: the reaction cavity and the polygonal central prism are both composed of graphite.
4. The MOCVD reactor structure according to claim 1, wherein: a plurality of square grooves are distributed on the inner wall of each side of the reaction cavity at intervals.
5. The MOCVD reactor structure according to claim 1, wherein: at least one through hole is further formed in the square groove and communicated with negative pressure generating equipment, and the through hole is used for adsorbing and fixing the substrate through negative pressure.
6. A system for growing micro-LEDs, characterized by comprising:
a MOCVD apparatus having a MOCVD reactor structure suitable for micro-LED growth according to any of claims 1 to 5;
the heating equipment is arranged outside the reaction cavity and is at least used for adjusting the temperature of the inner wall of the reaction cavity of the MOCVD reaction cavity structure; and
the gas inlet equipment at least adopts a polygonal annular separation gas inlet mode to input raw material gas required by micro-LED growth into a reaction cavity of the MOCVD reaction cavity structure, wherein the raw material gas comprises first reaction gas, first carrier gas, second reaction gas and second carrier gas, the first reaction gas, the first carrier gas, the second reaction gas and the second carrier gas are sequentially distributed in layers along the direction from the inner wall of the reaction cavity to the outer wall of a corresponding polygonal central prism, the first reaction gas comprises V-group source gas, the second reaction gas comprises III-group source gas, and the first carrier gas is mainly N 2 And H 2 。
7. The system for growing micro-LEDs of claim 6, wherein: the heating device comprises a radio frequency heating device.
8. The system for growing micro-LEDs of claim 6, wherein: the air inlet equipment is also used for inputting chlorine into the reaction cavity.
9. A method for growing micro-LEDs, characterized by comprising:
providing a system for growing micro-LEDs according to any of claims 6-8;
fixing a substrate required for growing micro-LEDs in a corresponding square groove on the inner wall of a reaction cavity;
adjusting the temperature of the inner wall of the reaction cavity to the temperature required by micro-LED growth;
inputting raw material gas required by micro-LEDs to the reaction cavity in a polygonal annular separation air inlet mode, wherein the raw material gas comprises first reaction gas, first carrier gas, second reaction gas and second carrier gas, and the first reaction gas, the first carrier gas, the second reaction gas and the second carrier gas are sequentially distributed in layers along the direction from the inner wall of the reaction cavity to the outer wall of the corresponding polygonal central prism;
wherein the first reaction gas comprises a V group source gas, and the first carrier gas is mainly N 2 And H 2 The second reactant gas includes a group III source gas.
10. The method for growing micro-LEDs of claim 9, further comprising: after the epitaxial growth of the micro-LED is finished, chlorine is input into the reaction cavity for self-cleaning.
CN202011175533.5A 2020-10-28 2020-10-28 micro-LED growth reaction cavity structure, micro-LED growth reaction cavity system and micro-LED growth reaction cavity method Active CN114411246B (en)

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CN104746037A (en) * 2013-12-29 2015-07-01 北京北方微电子基地设备工艺研究中心有限责任公司 A reaction cavity and an MOCVD device
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