CN108538969B - A kind of removing method of aln layer crackle and application - Google Patents

A kind of removing method of aln layer crackle and application Download PDF

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CN108538969B
CN108538969B CN201810171798.4A CN201810171798A CN108538969B CN 108538969 B CN108538969 B CN 108538969B CN 201810171798 A CN201810171798 A CN 201810171798A CN 108538969 B CN108538969 B CN 108538969B
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layer
aln
edge
removing method
pattern
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CN108538969A (en
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黄小辉
王小文
梁旭东
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Ma'anshan Jason Semiconductor Co Ltd
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Ma'anshan Jason Semiconductor Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • H01L33/0062Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate

Abstract

The present invention provides removing method and the application of a kind of aln layer crackle, and removing method includes following steps in sequence: 1) central area and fringe region is divided on substrate layer, the fringe region surrounds the central area;2) micrometre-grade pattern processing is carried out in the fringe region, obtains third edge pattern substrate layer;3) the growth buffering grown layer on the third edge pattern substrate layer;4) the growing aluminum nitride layer on the buffering grown layer.The present invention solve for obtain the higher aln layer of crystal quality and the case where cause aln layer to be easy to appear crackle.

Description

A kind of removing method of aln layer crackle and application
Technical field
The present invention relates to a kind of removing method of aln layer crackle and applications, belong to LED technology field.
Background technique
Aluminium nitride (AlN) belongs to third generation semiconductor material with wide forbidden band, has forbidden bandwidth high, breakdown electric field is high, thermal conductivity The advantages that rate is high, and electron saturation velocities are high and capability of resistance to radiation is high.AlN crystal has stable hexagonal wurtzite structure, brilliant Lattice constantAlN has maximum direct band gap in iii-v not semiconductor material, about 6.2eV is important blue light and ultra-violet light-emitting material.Its thermal conductivity is high, and resistivity is high, and breakdown field is powerful, and dielectric coefficient is small, is Excellent high-temperature high-frequency and high power device electronic material.Also, the AlN being orientated along c-axis has extraordinary piezoelectric property It is propagated with surface acoustic wave high speed, it is excellent SAW device piezoelectric material.Meanwhile AlN crystal and gallium nitride There are very close lattice constant and thermal expansion coefficient, is the preferred substrate material of epitaxial growth AlGaN photoelectric device.
Based on the characteristic that AlN or more is excellent, AlN is widely used in ultraviolet detector, high electron mobility transistor (HEMT), UV LED (LED).Wherein, the principle of ultraviolet LED sterilization is the appropriate length ultraviolet generated using LED Line destroys the DNA (DNA) of bacterium and the molecular link of ribonucleic acid (RNA), destroys original bacterial clump simultaneously The duplication breeding for preventing bacterium, achievees the purpose that kill bacterium.Ultraviolet-sterilization technology is irradiated using high-intensitive deep UV, can Various bacteriums, virus, helminth, algae and other pathogens are directly killed, be widely used at present the people's livelihood, medical treatment with And manufacture industry.
Although AlN has the advantages that many, AlN material is but very difficult to prepare.Preparation AlN needs high temperature and pressure to set Standby and accurately source stream amount control system.Currently, commercial gas phase depositing Al N uses the depositing device of high temperature, generally deposit AlN film thickness it is thicker, the crystal quality of AlN film is better.And when the AlN film of preparation is to certain thickness, because of AlN Lattice mismatch between substrate is larger, face crack easy to form, and crackle is easily generated from edges of substrate, with thickness Increase, crackle extends from fringe region toward central area, to influence surface yield.In order to obtain the higher AlN of crystal quality Film, needs to increase the thickness of film layer, but is readily incorporated crackle and causes surface yield poor.And in order to obtain higher table Face yield reduces the thickness of AlN film layer, and the crystal quality that will lead to AlN film is poor.The lance of this AlN film growth Shield receives very so that cannot obtain the flawless AlN film-substrate of high quality at present so as to cause the application of AlN film Big limitation.
Based on the above reasons, the present invention provides one kind can improve AlN film crystal quality and AlN film The epitaxial growth method of face crack, to be conducive to promote the performance for preparing device on AlN thin-film material.
Summary of the invention
In view of the foregoing drawbacks, the present invention provides removing method and the application of a kind of aln layer crackle, this method solve The case where causing aln layer to be easy to appear crackle to obtain the higher aln layer of crystal quality.
The present invention provides a kind of removing method of aln layer crackle, including following steps in sequence:
1) central area and fringe region are divided on substrate layer, the fringe region surrounds the central area;
2) micrometre-grade pattern processing is carried out in the fringe region, obtains third edge pattern substrate layer;
3) the growth buffering grown layer on the third edge pattern substrate layer;
4) the growing aluminum nitride layer on the buffering grown layer.
Due to biggish lattice mismatch existing between AlN and substrate layer, it is easy to produce in AlN layers of growth course biggish Stress, when stress build up to a certain extent when, need to discharge by certain mode, and crackle be discharge stress a kind of side Formula.By the long-term research of inventor, there are incomplete scission of links by the AlN grown due to substrate layer fringe region, and at scission of link It is the region for most easily producing stress release, so the fringe region in substrate layer most easily occurs for stress release.In order to realize side Edge flawless state, needs to solve the problems, such as edge scission of link, and the atomization that edge does not merge perfect can eliminate what edge scission of link generated Stress problem, the atomization not merged can slowly eliminate edge scission of link, form a stress buffer area, answer to be solved perfectly The crackle that power release generates, therefore the AlN layers of crackle occurred can be effectively eliminated by the above method.
The removing method of aln layer crackle as described above, wherein the edge of the central area and the substrate layer Edge minimum spacing be n, n >=10 μm.
The removing method of aln layer crackle as described above, wherein step 3) specifically includes:
Third edge patternization processing substrate layer is put into the reaction chamber of growth apparatus, the temperature of the reaction chamber is controlled It is 600-1200 DEG C, after Xiang Suoshu reaction chamber is passed through trimethyl aluminium and ammonia, reacts 3-10min, is served as a contrast in the third edge patternization The buffering grown layer is generated on bottom.
The removing method of aln layer crackle as described above, wherein the buffering grown layer with a thickness of a, 0 < a≤ 500nm。
The removing method of aln layer crackle as described above, wherein step 4) specifically includes:
The temperature for controlling the reaction chamber is 1100-1500 DEG C, and pressure 20-300mbar, Xiang Suoshu reaction chamber is passed through three After aluminium methyl and ammonia, the aln layer is generated on the buffering grown layer.
The removing method of aln layer crackle as described above, wherein the aln layer with a thickness of b, the μ of 2≤b≤10 m。
The removing method of aln layer crackle as described above, wherein in the third edge pattern substrate layer, micron order figure Case is selected from micron order yurt shape pattern, micron order trapezoidal pattern, micron order cone pattern, micron order cylindrical body pattern, micro- One of meter level spherical shape pattern, micron order pyrometric cone pattern are a variety of.
The removing method of aln layer crackle as described above, wherein the growth apparatus is selected from Organometallic Chemistry gas One of phase depositing device, molecular beam epitaxial device and hydride gas-phase epitaxy equipment.
The removing method of aln layer crackle as described above, wherein the substrate layer is selected from sapphire, silicon, silicon carbide One of with glass.
The present invention also provides a kind of removing methods of any of the above-described aln layer crackle in manufacture LED epitaxial structure In application.
Implementation of the invention, at least has the advantage that
1, stress release by being controlled the nebulization region not merged at edge by the present invention, so that the generation of crackle is eliminated, The AlN layer of flawless high quality can be obtained;
2, due to that can be adjusted control to the area of fringe region, the present invention can obtain large area flawless AlN layers;
3, the present invention can prepare the AlN layer of any figure;
4, the present invention is not cracked because of the presence of edge micron order figure so that stress obtains extraordinary release, So AlN layers of growth technique will be significantly simpler, it is only necessary to one layer of low temperature buffer layer, the subsequent directly continuous growing AIN layer of high temperature, Designed without complicated structure, growth conditions is simpler controllable, but also AlN layer growth can adapt to it is more different Substrate material;
5, due to AlN layers of flawless, AlN crystal quality can be greatly improved, so that the present invention can significantly improve AlN The performance of device on layer.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is this hair Bright some embodiments for those of ordinary skill in the art without any creative labor, can be with It obtains other drawings based on these drawings.
Fig. 1 is the substrate layer embodiment schematic diagram before the present invention divides;
Fig. 2 is one embodiment schematic diagram of substrate layer after the present invention divides;
Fig. 3 is the another embodiment schematic diagram of substrate layer after the present invention divides;
Fig. 4 is the substrate layer another embodiment schematic diagram after the present invention divides;
Fig. 5 is one embodiment schematic diagram of third edge pattern substrate layer of the present invention;
Fig. 6 is the another embodiment schematic diagram of third edge pattern substrate layer of the present invention.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is A part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art Every other embodiment obtained without creative efforts, shall fall within the protection scope of the present invention.
The present invention provides a kind of removing method of aln layer crackle, including following steps in sequence:
1) central area and fringe region are divided on substrate layer, the fringe region surrounds the central area;
2) micrometre-grade pattern processing is carried out in the fringe region, obtains third edge pattern substrate layer;
3) the growth buffering grown layer on the third edge pattern substrate layer;
4) the growing aluminum nitride layer on the buffering grown layer.
Fig. 1 is the substrate layer embodiment schematic diagram before the present invention divides;Fig. 2 is that the substrate layer one after the present invention divides is implemented It illustrates and is intended to;Fig. 3 is the another embodiment schematic diagram of substrate layer after the present invention divides;Fig. 4 is the substrate layer after the present invention divides Another embodiment schematic diagram please also refer to Fig. 1-Fig. 4.
It studies for a long period of time by inventor, the reason of aln layer easily forms crackle is since substrate layer fringe region is grown There are incomplete scission of links by AlN, and at scission of link are the region for most easily producing stress release, so stress release most easily occurs The fringe region of substrate layer is to form crackle.In order to realize edge flawless state, need to solve the problems, such as edge scission of link, and side The stress problem that the atomization that edge does not merge perfect can eliminate edge scission of link and generate, the atomization not merged can slowly eliminate edge Scission of link forms a stress buffer area, so that the crackle of stress release generation be solved perfectly.
Therefore, in step 1), it is necessary first to carry out region division to substrate layer shown in FIG. 1, i.e., be divided into substrate layer Central area 1 and fringe region 2.Wherein, central area 1 is in the centre of substrate layer, and fringe region 2 is in the edge of substrate layer And around central area.
In the present invention, substrate layer can be selected from one of sapphire, silicon, silicon carbide, zinc oxide, copper and glass.
It is envisioned that the non-central region of substrate layer is fringe region 2 behind selected center region 1.The present invention The concrete shape of central area 1 is not limited, such as central area 1 can be circle shown in Fig. 2, or shown in Fig. 3 Regular hexagon can also be unfilled corner rectangle shown in Fig. 4.
In order to inhibit the generation that disappears of crackle to the greatest extent, in the present invention to central area 1 and fringe region 2 into When row divides, minimum spacing >=10 μm at the edge at the edge and substrate layer of central area 1.Wherein, the edge of central area 1 is The edge of the boundary of central area 1 and fringe region 2, substrate layer is the outer rim of substrate layer.
In step 2), after dividing central area 1 and fringe region 2, fringe region 2 is carried out at micrometre-grade pattern Reason, generates the substrate layer that edge is handled by micrometre-grade pattern, that is, third edge pattern substrate layer.Specifically, it can use existing Some mask etch process, edge region 2 carry out micrometre-grade pattern processing, make have multiple micron orders in fringe region 2 Pattern.Multiple micrometre-grade patterns are flushed relative to central area, relative to not carrying out micrometre-grade pattern in fringe region The region of processing is protrusion.
The processing of so-called micrometre-grade patternization, refer to each pattern in edge region 2 size and each pattern it Between distance be all micron order size, specially 1-200 μm.The present invention is to specifically pattern without considered critical, Ke Yigen Need to make any figure according to later product.For example, micrometre-grade pattern can be selected from micron order yurt shape pattern, micron order ladder Shape pattern, micron order cone pattern, micron order cylindrical body pattern, micron-size spherical pattern, in micron order pyrometric cone pattern It is one or more.Fig. 5 is one embodiment schematic diagram of third edge pattern substrate layer of the present invention;Fig. 6 is third edge patternization of the present invention lining The another embodiment schematic diagram of bottom.In Fig. 5, the patterned yurt shape of fringe region 2, in Fig. 6, fringe region 2 It is patterned trapezoidal.
After being handled into shape micrometre-grade patternization fringe region 2, in step 3), carried out in third edge pattern substrate layer Buffer the growth of grown layer.
Third edge pattern substrate layer can be put into the reaction chamber of growth apparatus, the temperature for controlling reaction chamber is 600- 1200 DEG C, after being passed through trimethyl aluminium and ammonia to reaction chamber, 3-10min is reacted, buffering is generated on third edge pattern substrate layer Grown layer.
Specifically, trimethyl aluminium and ammonia can decompose concurrent biochemical reaction at 600-1200 DEG C, to generate metal Nitride forms buffering grown layer.
In general, control buffering grown layer with a thickness of a, and 0 < a≤500nm.
After above-mentioned buffering generation layer generates, the growth of aln layer can be carried out.Step 4) includes: described in control The temperature of reaction chamber is 1100-1500 DEG C, pressure 20-300mbar, after being passed through trimethyl aluminium and ammonia to reaction chamber, reaction 5-12.5min generates aln layer on buffering grown layer.
Temperature, pressure condition in the step 4) can not only make buffer grown layer decompose polymerization formed be uniformly distributed At nuclear island, additionally it is possible to so that the reactant being newly passed through is decomposed into atom and chemical combination metal nitride, to merge with nucleus island And grow up, the aln layer of any impurity is not incorporated into buffering grown layer growth.
Since AlN film thickness is thicker, the crystal quality of AlN film is better.Therefore, can the present invention in aln layer Thickness be more than or equal to 2 μm, maximum can obtain the aln layer that with a thickness of 10 μm and flawless generates.
In the growth course of aln layer, due to the presence of substrate layer fringe region micrometre-grade pattern, same and Al atom Migration velocity is slower, therefore aln layer fails to be linked to be complete plane, unformed does not merge so as to cause fringe region 2 or Spray pattern.And the unformed spray pattern not merged at edge can make gently releasing for aluminium nitride edge region stress It puts, without cracking.Although edge region 2 has atomization amorphous state, 1 surface of central area can generate smooth nothing and split Line and the higher aln layer of crystal quality.
Further, in the present invention, the growth for buffering grown layer and aln layer can select Organometallic Chemistry gas Any one of phase depositing device, molecular beam epitaxial device and hydride gas-phase epitaxy equipment.
The present invention prepares the aln layer of flawless, is successively grown by the aln layer in flawless prepared by the present invention N-type doping layer, mqw light emitting layer and p-type doped layer can obtain the epitaxial structure with aln layer.
Due to the smooth flawless of aln layer and crystal quality is higher, the epitaxy junction obtained on the basis of the present invention Structure and LED have good light emission luminance and longer working life.
Hereinafter, being situated between in detail by crackle removing method of several specific embodiments to aln layer of the invention It continues.
Embodiment 1
The gallium nitride layer crackle removing method of the present embodiment includes the following steps:
1) 2 inch circular Sapphire Substrates are taken, central area and fringe region are divided, wherein central area is circle;
The circle of central area is 20 μm with the circular semidiameter of Sapphire Substrate layer;
2) edge region carries out micron order yurt shape patterned process, obtains third edge patternization lining as shown in Figure 5 Bottom;
Wherein, the bottom width of yurt shape is 3 μm, is highly 1.5 μm, and the spacing between yurt is 1 μm;
3) in the growth of the enterprising row buffering grown layer of above-mentioned third edge pattern substrate layer
Third edge pattern substrate layer obtained in step 2) is put into Metallo-Organic Chemical Vapor deposition (MOCVD) equipment In, reaction chamber temperature is increased to 600 DEG C, chamber pressure control in 500mbar, be passed through 50ml trimethyl aluminium and The NH of 10000mL3, grow 10 minutes, obtain the buffering grown layer of 25nm;
4) generation of aln layer is carried out on above-mentioned buffering grown layer
Reaction chamber temperature is increased to 1300 DEG C, chamber pressure control buffers grown layer at this time and divided in 50mbar It depolymerizes, formation is equally distributed at nuclear island, is subsequently passed the trimethyl aluminium of 300ml and the NH of 10000mL3, control growth speed Rate is 1.5 μm/h, so that nucleus island is grown up and merges.Do not mix any impurity grow 120 minutes, formed it is AlN layer undoped, this AlN layers with a thickness of 2000nm.
The AlN layer surface flawless, edge are the nebulization region not merged, and nebulization region is 20 μ m of edge.
High-crystal quality to the above-mentioned acquisition and AlN layer without face crack carries out XRD test, wherein (002) direction Half-breadth is 100arcsec, and the half-breadth in (102) direction is 350arcsec.
Embodiment 2
The gallium nitride layer crackle removing method of the present embodiment includes the following steps:
1) 4 inch circular Sapphire Substrates are taken, central area and fringe region are divided, wherein central area is circle;
The circle of central area is 30 μm with the circular semidiameter of Sapphire Substrate layer;
2) edge region carries out the processing of micron order trapezoidal patternization, obtains third edge pattern substrate layer as shown in FIG. 6;
Wherein, a length of 3 μm of trapezoidal bottom, bottom width be 2 μm, be highly 1.5 μm, it is trapezoidal between spacing be 2 μm;
3) in the growth of the enterprising row buffering grown layer of above-mentioned third edge pattern substrate layer
Third edge pattern substrate layer obtained in step 2) is put into Metallo-Organic Chemical Vapor deposition (MOCVD) equipment In, reaction chamber temperature is increased to 600 DEG C, chamber pressure control in 500mbar, be passed through 50ml trimethyl aluminium and The NH of 10000mL3, grow 10 minutes, obtain the buffering grown layer of 25nm;
4) generation of aln layer is carried out on above-mentioned buffering grown layer
Reaction chamber temperature is increased to 1350 DEG C, chamber pressure control buffers grown layer at this time and divided in 50mbar It depolymerizes, formation is equally distributed at nuclear island, is subsequently passed the trimethyl aluminium of 500ml and the NH of 10000mL3, control growth speed Rate is 2.5 μm/h, so that nucleus island is grown up and merges.Do not mix any impurity grow 120 minutes, formed it is AlN layer undoped, this AlN layers with a thickness of 5000nm.
The AlN layer surface flawless, edge are the nebulization region not merged, and nebulization region is 30 μ m of edge.
High-crystal quality to the above-mentioned acquisition and AlN layer without face crack carries out XRD test, wherein (002) direction Half-breadth is 50arcsec, and the half-breadth in (102) direction is 200arcsec.
Meanwhile ultraviolet LED is prepared on the basis of AlN layer in step 4).Wherein, the chip of ultraviolet LED is 350 μ ms 350 μm, it is passed through the electric current of 20mA, operating voltage 6.0V, light emission luminance 4mW;And the uv-LED device service life is 20,000 small When.
Embodiment 3
The gallium nitride layer crackle removing method of the present embodiment includes the following steps:
1) it takes 2 inch circular Sapphire Substrates, divides central area and fringe region, wherein central area is positive six Side shape;
Maximum spacing is 50 μm between regular hexagon edge and edges of substrate, between regular hexagon edge and edges of substrate most Small spacing is 10 μm;That is, the intersection point on the adjacent both sides of regular hexagon in the radial direction the edge away from substrate distance be 10 μm, The midpoint of any side of regular hexagon in the radial direction the edge away from substrate distance be 50 μm;
2) edge region carries out micron order yurt shape patterned process;
Wherein, the bottom width of yurt shape is 2 μm, is highly 1.5 μm, and the spacing between yurt is 1 μm;
3) in the growth of the enterprising row buffering grown layer of above-mentioned third edge pattern substrate layer
Third edge pattern substrate layer obtained in step 2) is put into Metallo-Organic Chemical Vapor deposition (MOCVD) equipment In, reaction chamber temperature is increased to 600 DEG C, chamber pressure control in 500mbar, be passed through 50ml trimethyl aluminium and The NH of 10000mL3, grow 10 minutes, obtain the buffering grown layer of 25nm;
4) generation of aln layer is carried out on above-mentioned buffering grown layer
Reaction chamber temperature is increased to 1300 DEG C, chamber pressure control buffers grown layer at this time and divided in 50mbar It depolymerizes, formation is equally distributed at nuclear island, is subsequently passed the trimethyl aluminium of 400ml and the NH of 10000mL3, control growth speed Rate is 2.0 μm/h, so that nucleus island is grown up and merges.Do not mix any impurity grow 120 minutes, formed it is AlN layer undoped, this AlN layers with a thickness of 4000nm.
The AlN layer surface flawless, edge are the nebulization region not merged.
High-crystal quality to the above-mentioned acquisition and AlN layer without face crack carries out XRD test, wherein (002) direction Half-breadth is 100arcsec, and the half-breadth in (102) direction is 250arcsec.
Embodiment 4
The gallium nitride layer crackle removing method of the present embodiment includes the following steps:
1) 4 inch circular Sapphire Substrates are taken, divide central area and fringe region, wherein central area is rectangle;
Maximum spacing is 100 μm between rectangular edges and edges of substrate, minimum spacing between rectangular edges and edges of substrate It is 10 μm;
2) edge region carries out the trapezoidal shape patterned process of micron order;
Wherein, a length of 4 μm of trapezoidal bottom, bottom width be 2 μm, be highly 1.0 μm, it is trapezoidal between spacing be 2 μm;
3) in the growth of the enterprising row buffering grown layer of above-mentioned third edge pattern substrate layer
Third edge pattern substrate layer obtained in step 2) is put into Metallo-Organic Chemical Vapor deposition (MOCVD) equipment In, reaction chamber temperature is increased to 600 DEG C, chamber pressure control in 500mbar, be passed through 50ml trimethyl aluminium and The NH of 10000mL3, grow 10 minutes, obtain the buffering grown layer of 25nm;
4) generation of aln layer is carried out on above-mentioned buffering grown layer
Reaction chamber temperature is increased to 1350 DEG C, chamber pressure control buffers grown layer at this time and divided in 50mbar It depolymerizes, formation is equally distributed at nuclear island, is subsequently passed the trimethyl aluminium of 400ml and the NH of 10000mL3, control growth speed Rate is 2.0 μm/h, so that nucleus island is grown up and merges.Do not mix any impurity grow 120 minutes, formed it is AlN layer undoped, this AlN layers with a thickness of 4000nm.
The AlN layer surface flawless, edge are the nebulization region not merged.
High-crystal quality to the above-mentioned acquisition and AlN layer without face crack carries out XRD test, wherein (002) direction Half-breadth is 80arcsec, and the half-breadth in (102) direction is 280arcsec.
Meanwhile ultraviolet LED is prepared on the basis of AlN layer in step 4).Wherein, the chip of ultraviolet LED is 350 μ ms 350 μm, it is passed through the electric current of 20mA, operating voltage 6.0V, light emission luminance 5mW;And the uv-LED device service life is 1.5 ten thousand Hour.
Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations;To the greatest extent Pipe present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: its according to So be possible to modify the technical solutions described in the foregoing embodiments, or to some or all of the technical features into Row equivalent replacement;And these are modified or replaceed, various embodiments of the present invention technology that it does not separate the essence of the corresponding technical solution The range of scheme.

Claims (10)

1. a kind of removing method of aln layer crackle, which is characterized in that including following steps in sequence:
1) central area and fringe region are divided on substrate layer, the fringe region surrounds the central area;
2) micrometre-grade pattern processing is carried out in the fringe region, obtains third edge pattern substrate layer;
3) the growth buffering grown layer on the third edge pattern substrate layer;
4) the growing aluminum nitride layer on the buffering grown layer.
2. the removing method of aln layer crackle according to claim 1, which is characterized in that the edge of the central area Minimum spacing with the edge of the substrate layer is n, n >=10 μm.
3. the removing method of aln layer crackle according to claim 1 or 2, which is characterized in that step 3) specifically includes:
Third edge patternization processing substrate layer is put into the reaction chamber of growth apparatus, the temperature for controlling the reaction chamber is 600-1200 DEG C, after Xiang Suoshu reaction chamber is passed through trimethyl aluminium and ammonia, 3-10min is reacted, in the edge graph patterned substrate The buffering grown layer is generated on layer.
4. the removing method of aln layer crackle according to claim 3, which is characterized in that the thickness of the buffering grown layer Degree is a, 0 < a≤500nm.
5. the removing method of aln layer crackle according to claim 3, which is characterized in that step 4) specifically includes:
The temperature for controlling the reaction chamber is 1100-1500 DEG C, and pressure 20-300mbar, Xiang Suoshu reaction chamber is passed through trimethyl After aluminium and ammonia, the aln layer is generated on the buffering grown layer.
6. the removing method of aln layer crackle according to claim 5, which is characterized in that the thickness of the aln layer For b, 2≤b≤10 μm.
7. the removing method of aln layer crackle according to claim 1, which is characterized in that the edge graph patterned substrate In layer, micrometre-grade pattern is selected from micron order yurt shape pattern, micron order trapezoidal pattern, micron order cone pattern, micron order One of cylindrical body pattern, micron-size spherical pattern, micron order pyrometric cone pattern are a variety of.
8. the removing method of aln layer crackle according to claim 3, which is characterized in that the growth apparatus is selected from gold Belong to one of organic chemical vapor deposition equipment, molecular beam epitaxial device and hydride gas-phase epitaxy equipment.
9. the removing method of aln layer crackle according to claim 1, which is characterized in that the substrate layer is selected from blue precious One of stone, silicon, silicon carbide, zinc oxide, copper and glass.
10. application of the removing method of any aln layer crackle of claim 1-9 in manufacture LED epitaxial structure.
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