WO2012065467A1

WO2012065467A1 - Process integration system for led chip and processing method thereof

Info

Publication number: WO2012065467A1
Application number: PCT/CN2011/078773
Authority: WO
Inventors: 奚明
Original assignee: 理想能源设备(上海)有限公司
Priority date: 2010-11-19
Filing date: 2011-08-23
Publication date: 2012-05-24
Also published as: CN102054910A; KR20130105671A; CN102054910B

Abstract

A process integration system for an LED chip and a processing method thereof are provided. The process integration system comprises: a loading/unloading device (101), for loading or unloading an LED base plate which needs to be processed or has been processed; a vacuum transmission device (104), for providing a vacuum transmission environment to transmit the LED base plate which needs to be processed or has been processed; at least one epitaxial layer deposition chamber (102), which is located at a peripheral part of the vacuum transmission device (104) and is used for epitaxial layer deposition onto the LED base plate to be processed; and at least one pre-processing chamber (103), for the pre-processing of the LED base plate which needs to be processed or has been processed. The present invention improves productivity in the epitaxial layer deposition process of LED base plates, improves the productivity and yield of LED chips, reduces the cost of LED chips, and improves the service life and utilization rate of the epitaxial layer deposition chamber.

Description

LED chip process integration system and processing method thereof The present application claims to be filed on November 19, 2010 by the Chinese National Intellectual Property Office, the application number is 201010552412.8, and the invention name is "LED chip process integration system and its processing method" Priority is hereby incorporated by reference in its entirety. Technical field

The present invention relates to the field of semiconductor technology, and in particular, to an LED chip process integration system and a processing method thereof.

Background technique

With the breakthrough of the third-generation semiconductor material GaN and the advent of blue, green and white light-emitting diodes, following the microelectronic revolution triggered by semiconductor technology, a new industrial revolution-lighting revolution was born, which is marked by semiconductor lamps. Gradually replace incandescent and fluorescent lamps. And the life expectancy can be extended by 100 times. Therefore, semiconductor lighting has the advantages of energy saving, long life and environmental protection.

Please refer to Figure 1 for a schematic diagram of the structure of the existing LED chip device. The LED chip includes: an LED substrate 10, the material of the LED substrate 10 is sapphire; an N-type GaN layer 11 on which the N-type GaN layer 11 is located; a multi-quantum well active layer 12, located at On the N-type GaN layer 11; a P-type GaN layer 13 on the multiple quantum well active layer 12; a conductive layer 14 on the P-type GaN layer 13; and a P-type GaN electrode layer 15, located in the On the conductive layer 14; an N-type GaN electrode layer 16 on the N-type GaN layer 11; a protective layer 17 between the N-type GaN electrode layer 16 and the P-type GaN electrode layer 15, the protective layer 17 covers the conductive layer 14.

For convenience of explanation, the N-type GaN layer 11, the multiple quantum well active layer 12, and the P-type GaN layer 13 are referred to as epitaxial layers. The epitaxial layer is typically fabricated using an epitaxial layer deposition apparatus. In the conventional epitaxial layer deposition apparatus, when the epitaxial layer is formed, the LED substrate is first placed from the clean room on the loading and unloading device of the epitaxial layer deposition apparatus; and then a vacuuming step is performed to remove the LED substrate from the loading and unloading device. And an epitaxial layer deposition chamber disposed in the epitaxial layer deposition apparatus; and then performing a heating step by using the epitaxial layer deposition chamber, that is, the LED substrate is raised from a room temperature (10 to 30 degrees Celsius) to a high temperature, and the high temperature range is 800~1300 degrees Celsius; then using the epitaxial layer deposition chamber for epitaxial layer deposition The epitaxial layer deposition step includes depositing the N-type GaN layer 11, the multiple quantum well active layer 12, and the P-type GaN layer 13 shown in FIG. 1; and then depositing the deposition chamber by using the epitaxial layer The LED substrate of the epitaxial layer is subjected to a cooling step of lowering the LED substrate from the high temperature to room temperature; then performing a vacuuming operation to place the LED substrate on the loading and unloading device; and finally moving the LED substrate to The clean room is thereby completed to deposit epitaxial layers of the LED substrate.

According to the prior art, after the epitaxial layer is deposited, it is necessary to place the LED substrate from the clean room on the loading and unloading device of the conductive layer deposition apparatus to perform deposition of the conductive layer. Specifically, the method includes: first performing a vacuuming step of placing the LED substrate from a clean room in a conductive layer deposition chamber of a conductive layer deposition apparatus; and then performing heating by using the conductive layer deposition chamber, even if the LED substrate is Raising the temperature to 200-500 degrees Celsius at room temperature; then performing a conductive layer deposition step using the conductive layer deposition chamber; then performing a cooling step using the conductive layer deposition chamber, cooling the LED substrate to room temperature; and then pumping again The LED substrate is placed on the loading and unloading device by vacuum action; finally, the LED substrate is moved to a clean room to complete deposition of a conductive layer of the LED substrate.

In practice, it has been found that the prior art has at least the following problems:

First, the deposition time of the epitaxial layer deposition chamber is long, usually 3-6 hours, which affects the production efficiency of the epitaxial layer deposition equipment, thereby affecting the production efficiency of the LED chip, thereby making the existing LED The output of the chip is not high, which also causes the existing LED chips to be more expensive;

Second, before the epitaxial layer deposition chamber begins to deposit the epitaxial layer and after the epitaxial layer is deposited, the steps of heating and cooling the LED substrate are respectively required, and the existing heating step and cooling step are performed by using the epitaxial layer deposition chamber. This occupies the time for depositing the epitaxial layer in the epitaxial layer deposition chamber, further reducing the production efficiency of the existing epitaxial layer deposition apparatus, affecting the output of the LED chip, and increasing the cost of the LED chip;

Third, the heating step and the temperature decreasing step are performed by using the epitaxial layer deposition chamber, and the repeated temperature rise and temperature reduction shortens the service life of the epitaxial layer deposition chamber, and the epitaxial layer deposition chamber needs to be frequently maintained. , reducing the utilization time of the epitaxial layer deposition equipment (uptime), and failing to meet actual needs;

Fourth, the epitaxial layer deposition apparatus and the conductive layer deposition apparatus are independently disposed such that the LED substrate needs to perform at least four vacuuming operations before entering and leaving the epitaxial layer deposition apparatus and the conductive layer deposition apparatus, thereby reducing the production of the LED substrate. Efficiency and yield of the LED substrate; and when the LED substrate is moved from the epitaxial layer deposition device to the conductive layer, it needs to be exposed in the clean room so that there is Machine contaminants, inorganic contaminants, and water vapor may contaminate the epitaxial layer, thereby affecting the reliability between the conductive layer and the epitaxial layer.

Summary of the invention

SUMMARY OF THE INVENTION An object of the present invention is to provide an LED chip process integration system and a processing method thereof, which solve the problems of low production efficiency and high production cost of an epitaxial layer deposition process of an LED chip existing in the prior art.

In order to solve the above problems, the present invention provides an LED chip process integration system, comprising: a loading and unloading device for loading or unloading a processed or processed LED substrate; and a vacuum transmission device for providing a vacuum transmission environment for transmission The LED substrate to be processed or processed;

At least one epitaxial layer deposition chamber is disposed at a periphery of the vacuum transmission device, and the epitaxial layer deposition chamber is configured to perform epitaxial layer deposition on the LED substrate to be processed;

At least one pretreatment chamber for pretreating the LED substrate to be processed or processed.

Optionally, the pre-processing chamber is located at a periphery of the vacuum transmission device for heating, cleaning or cooling the LED substrate to be processed or cooling the processed LED substrate.

Optionally, the pre-processing chamber is provided with a heating stage for heating the LED substrate to raise the LED substrate from a first temperature to a second temperature.

Optionally, the temperature of the first temperature ranges from 10 to 30 degrees Celsius, and the temperature of the second temperature ranges from 700 to 1300 degrees Celsius.

Optionally, the pre-treatment chamber is provided with at least one air inlet and at least one air outlet, and the air inlet is configured to pass one or more of a reducing gas or a protective gas, the reducing property A gas or protective gas is used to clean the LED substrate.

Optionally, the reducing gas is hydrogen or ammonia, and the protective gas is one or more of an inert gas or nitrogen.

Optionally, the pre-processing chamber is provided with a temperature control device, and the temperature control device is configured to control the heating station to heat the LED substrate from the first temperature to the first in 5 to 15 minutes. Two temperatures, and maintaining the LED substrate at the second temperature for 1 to 25 minutes;

The air inlet is configured to pass the reducing property when the LED substrate maintains the second temperature One or more of a gas or a protective gas.

Optionally, the deposition time of the epitaxial layer deposition chamber ranges from 0.5 to 6.5 hours.

Optionally, the ratio of the number of the pre-treatment chamber to the number of epitaxial layer deposition chambers is

1/2~1/5.

Optionally, the ratio of the number of the pre-treatment chambers to the epitaxial layer deposition chamber is 1/3. Optionally, the method further includes: a conductive layer deposition chamber located at a periphery of the vacuum transfer device and the epitaxial layer deposition chamber, the conductive layer deposition chamber for depositing a conductive layer.

Optionally, the vacuum transfer device is linear in shape, and the loading and unloading device, the pretreatment chamber, the epitaxial layer deposition chamber, and the conductive layer deposition chamber are linearly arranged around the periphery of the vacuum transfer device.

Optionally, the vacuum transmission device has a polygonal or circular shape, and the loading and unloading device, the pretreatment chamber, the epitaxial layer deposition chamber, and the conductive layer deposition chamber are located at a periphery of the vacuum transmission device.

Optionally, the pretreatment chamber is connected to the vacuum transmission device, the conductive layer deposition chamber is linearly connected to the pretreatment chamber, and the conductive layer deposition chamber is located in the pretreatment chamber Aside from the side of the vacuum transmission device.

Optionally, the conductive layer is a metal layer or a transparent conductive layer, and the metal layer is one or more of a gold-nickel alloy, a gold-titanium alloy or another metal, and the transparent conductive layer is in ITO, ΖηΟ One or more.

Optionally, the epitaxial layer deposition chamber and the conductive layer deposition chamber are respectively provided with independent exhaust systems.

Optionally, the deposition time of the conductive layer deposition chamber ranges from 10 to 40 minutes.

Optionally, the ratio of the number of epitaxial layer deposition chambers to the number of conductive layer deposition chambers ranges from 2/1 to 12/1.

Optionally, the ratio of the number of epitaxial layer deposition chambers to the number of conductive layer deposition chambers ranges from 4/1 to 12/1.

Optionally, the ratio of the number of epitaxial layer deposition chambers to the number of conductive layer deposition chambers ranges from 8/1 to 12/1.

Optionally, the epitaxial layer deposition chamber is configured to deposit a Ν-type GaN layer, a multiple quantum well active layer, and a P-type GaN layer, wherein the N-type GaN layer, the multiple quantum well active layer, and the P-type GaN layer are formed The epitaxial layer.

Optionally, the number of the epitaxial layer deposition chambers is at least three, including: N-type GaN layer sinking An accumulation chamber, a multiple quantum well active layer deposition chamber, and a P-type GaN layer deposition chamber for depositing an N-type GaN layer, the multiple quantum well active layer deposition chamber And a P-type GaN layer deposition chamber for depositing a P-type GaN layer, wherein the N-type GaN layer, the multiple quantum well active layer, and the P-type GaN layer constitute the epitaxial layer .

Correspondingly, the present invention further provides a processing method of an LED chip process integration system, comprising: placing an LED substrate to be processed on a loading and unloading device;

Disposing the LED substrate to be processed in a pretreatment chamber by using a vacuum transfer device; pretreating the LED substrate to be processed by using the pretreatment chamber;

Depositing the pretreated LED substrate in an epitaxial layer deposition chamber;

Epitaxial layer deposition is performed in the epitaxial layer deposition chamber.

Optionally, the pre-processing comprises heating, cooling or cleaning the LED substrate. Optionally, the method further includes:

Transmitting an LED substrate deposited with an epitaxial layer to the pretreatment chamber by using the vacuum transfer device;

The pretreatment chamber performs a first cooling process on the LED substrate;

The first cooled LED substrate is transferred to a conductive layer deposition chamber for depositing a conductive layer.

Optionally, the method further includes: transmitting the LED substrate deposited with the conductive layer to the pretreatment chamber for performing a second cooling process.

Optionally, the preprocessing includes:

Heating the LED substrate from the first temperature to the second temperature in 5 to 15 minutes by using a temperature control device;

Holding the LED substrate at the second temperature for 1 to 25 minutes;

While the LED substrate maintains the second temperature, one or more of a reducing gas or a protective gas is introduced into the pretreatment chamber.

Optionally, the method further includes transmitting the LED substrate deposited with the epitaxial layer to the pretreatment chamber for performing a cooling process, wherein the cooling process is to reduce the temperature of the LED substrate from a second temperature to a first temperature, The temperature of the first temperature ranges from 10 to 30 degrees Celsius, and the temperature range of the second temperature is 700~1300 degrees Celsius.

Optionally, the first cooling process is to reduce the temperature of the LED substrate from a second temperature to a third temperature, and the second temperature has a temperature range of 700 to 1300 degrees Celsius, and the temperature range of the third temperature It is 100~400 degrees Celsius.

Optionally, the epitaxial layer is deposited for a time ranging from 0.5 to 6.5 hours.

Optionally, the method further includes:

Depositing the cooled LED substrate in a conductive layer deposition chamber by using the vacuum transfer device;

Conductive layer deposition is performed on the LED substrate using the conductive layer deposition chamber.

Optionally, the second cooling process is to cool the LED substrate from 100-400 degrees Celsius to

10 to 30 degrees Celsius.

Optionally, the epitaxial layer comprises an N-type GaN layer, a multiple quantum well active layer, and a P-type GaN layer. Optionally, the epitaxial layer deposits an N-type GaN layer, a multiple quantum well active layer, and a P-type GaN layer by using the epitaxial layer deposition chamber or deposits N-type GaN by using the three epitaxial layer deposition chambers respectively. Layer, multiple quantum well active layer and P-type GaN layer.

Optionally, the epitaxial layer deposition chamber deposits the N-type GaN layer in a temperature range of 1000-1300 degrees Celsius, and the time range is 100-200 minutes, and the formed N-type GaN layer has a thickness ranging from 1 to 3 Micron

Forming the multi-quantum well active layer at a temperature ranging from 700 to 800 degrees Celsius and a time range of 30 to 80 minutes, and forming a multi-quantum well active layer having a thickness ranging from 600 to 900 angstroms;

The P-type GaN layer is formed to have a temperature range of 850 to 950 degrees Celsius and a time range of 20 to 80 minutes, and the P-type GaN layer is formed to have a thickness ranging from 0.2 to 0.6 μm.

Compared with the prior art, the present invention has the following advantages:

The LED chip process integration system provided by the present invention comprises a pre-processing chamber outside the deposition chamber of the epitaxial layer, the pre-processing chamber is used for pre-treating the LED substrate, so that the epitaxial layer deposition chamber is only used for Epitaxial layer deposition increases the time for depositing the epitaxial layer in the epitaxial layer deposition chamber, and also improves the production efficiency of the epitaxial layer deposition, correspondingly increasing the production efficiency of the LED chip and the yield of the LED chip; The layer deposition chamber is only used for epitaxial layer deposition, which avoids the influence of its repeated heating and cooling on its service life, thereby prolonging the service life of the epitaxial layer deposition chamber and reducing the deposition chamber of the epitaxial layer. Maintenance of labor costs and time costs, improved the extension The utilization rate of the layer deposition chamber satisfies the actual needs; since the transmission of the LED substrate between the epitaxial layer deposition chamber and the pretreatment chamber is performed by using a vacuum transmission environment, the LED substrate is protected from external contaminants. Pollution;

Further preferably, the pre-treatment chamber can also be used for cleaning the surface of the LED substrate to remove contaminants such as particles, organic matter, inorganic substances and water vapor on the surface of the LED substrate, thereby improving subsequent deposition. The quality of the epitaxial layer, and the adhesion between the epitaxial layer and the LED substrate is improved, and the reliability of the LED substrate is improved;

Further preferably, the cleaning step of the pretreatment chamber has a time range of 10 to 40 minutes, and the deposition time of the epitaxial layer deposition chamber ranges from 0.5 to 6.5 hours, and the pretreatment chamber and the epitaxy are disposed. The ratio of the number of layer deposition chambers ranges from 1/2 to 1/5, so that the pretreatment chamber cooperates with the deposition chamber of the epitaxial layer to improve the processing speed of the LED substrate and improve the production efficiency and yield of the LED chip. ;

Further optimized, the ratio of the number of the pre-treatment chamber to the epitaxial layer deposition chamber is 1/3, which comprehensively considers the cost of the epitaxial layer deposition chamber and improves the production efficiency of the epitaxial layer deposition chamber, so that More reasonable cost to obtain higher production efficiency;

Further preferably, the LED chip process integration system further comprises a conductive layer deposition chamber, such that the deposited LED substrate of the epitaxial layer does not need to be subjected to repeated vacuuming steps, and enters the conductive layer deposition chamber for conducting conductive layer deposition in a vacuum environment. On the one hand, the production efficiency of the conductive layer deposition is improved, the production efficiency and the yield of the LED chip are further improved, and on the other hand, the LED substrate is prevented from being exposed to the clean room, and the LED substrate is prevented from being contaminated by the clean room. The adhesion between the conductive layer and the epitaxial layer is improved, and the yield and reliability of the LED chip are improved;

Further optimized, the shape of the vacuum transmission device is linear, and the loading and unloading device, the pretreatment chamber, the epitaxial layer deposition chamber, and the conductive layer deposition chamber are linearly arranged on the periphery of the vacuum transmission device, thereby The integration of the LED chip process integration system is improved, the space occupied by the clean room is less, the cost of the clean room is reduced, and the manufacturing cost of the LED chip is reduced;

Further preferably, the vacuum transmission device has a polygonal shape, the pretreatment chamber is located on a side of the vacuum transmission device opposite to the epitaxial layer deposition chamber, and the conductive layer deposition chamber is located in the pretreatment The device is away from the side of the vacuum transmission device and the epitaxial deposition chamber, so that the integration of the LED chip process integration system is increased, the space occupied by the clean room is less, the cost of the clean room is reduced, and the LED chip is reduced. cost; Further optimized, the epitaxial layer deposition chamber and the conductive layer deposition chamber are respectively provided with independent exhaust systems, thereby improving the processing speed of the epitaxial layer deposition chamber and the conductive layer deposition chamber, and improving the processing speed. LED substrate production efficiency and output;

Further preferably, the ratio of the number of epitaxial layer deposition chambers to the number of conductive layer deposition chambers ranges from 8/1 to 12/1 such that the epitaxial layer deposition chamber and the conductive layer deposition chamber The number is matched such that the utilization of the epitaxial layer deposition chamber and the conductive layer deposition chamber is improved, and the epitaxial layer deposition chamber or the conductive layer deposition chamber is prevented from being idle or overburdened.

DRAWINGS

1 is a schematic structural view of a conventional LED chip device;

2 is a schematic structural view of a LED chip process integration system according to a first embodiment of the present invention; FIG. 3 is a schematic flow chart of a processing method of the LED chip process integration system according to the first embodiment of the present invention;

4 is a schematic structural view of a LED chip process integration system according to a second embodiment of the present invention; FIG. 5 is a schematic structural view of a LED chip process integration system according to a third embodiment of the present invention; FIG. 6 is a process integration of an LED chip according to a fourth embodiment of the present invention; FIG. 7 is a schematic structural diagram of an LED chip process integration system according to a fifth embodiment of the present invention; FIG. 8 is a schematic structural view of a LED chip process integration system according to a sixth embodiment of the present invention.

detailed description

The production efficiency of the epitaxial layer deposition process for the existing LED substrate is not high, so that the production efficiency of the LED chip and the output of the LED chip are low, resulting in high cost of the existing LED chip and the existing epitaxial layer deposition chamber. In the case of low service life and utilization, the present invention provides an LED chip process integration system, including:

Loading and unloading device for loading or unloading the LED substrate to be processed or processed; vacuum conveying device for providing a vacuum transmission environment for transmitting the LED substrate to be processed or processed;

The technical solution of the present invention will be described in detail below with reference to specific embodiments. Please refer to FIG. 2 , which is a schematic structural diagram of an LED chip process integration system according to a first embodiment of the present invention. The LED chip process integration system 100 includes:

Loading and unloading device 101 for loading or unloading the LED substrate to be processed or processed; vacuum transmitting device 104 for providing a vacuum transmission environment for transmitting the LED substrate to be processed or processed;

At least one epitaxial layer deposition chamber 102 is located at a periphery of the vacuum transfer device 104, and the epitaxial layer deposition chamber 102 is configured to perform epitaxial layer deposition on the LED substrate to be processed;

At least one pretreatment chamber _{103 is} configured to pretreat the LED substrate to be processed or processed.

In order to better illustrate the operation of the LED chip process integration system 100 of the present invention, please refer to FIG. 3, which is a schematic flowchart of a processing method of the LED chip process integration system according to the first embodiment of the present invention. The processing method includes:

Step S1, placing the LED substrate to be processed on the loading and unloading device;

Step S2, the LED substrate to be processed is placed in the pre-processing chamber by using a vacuum transfer device; Step S3, pre-processing the LED substrate to be processed by using the pre-processing chamber; Step S4, pre-processing The latter LED substrate is placed in an epitaxial layer deposition chamber;

Step S5, performing epitaxial layer deposition in the epitaxial layer deposition chamber.

The structure of the LED chip process integration system of the present invention will be described in detail below in conjunction with the processing method of the LED chip process integration system.

The inventors have found that the existing epitaxial layer deposition apparatus requires a step of pretreating the LED substrate to be processed in the epitaxial layer deposition chamber before performing the epitaxial layer deposition process, the pretreatment including heating, cooling or cleaning treatment, etc. For example, heating the LED substrate to be processed causes the LED substrate to be processed to reach a high temperature condition for performing epitaxial layer deposition from room temperature, the room temperature ranges from 10 to 30 degrees Celsius, and the high temperature ranges from 700 to 1300. Celsius; After the epitaxial layer is deposited, the processed (ie, deposited epitaxial layer) LED substrate needs to be cooled to lower the temperature of the high temperature LED substrate to room temperature. However, the existing epitaxial layer deposition chamber is expensive, and the pretreatment of the LED substrate to be processed is utilized. One of the defects is that the equipment is costly and the production cost is large, because the epitaxial layer deposition chamber is occupied. During the deposition of the epitaxial layer, the yield of the epitaxial layer deposition chamber is reduced, which affects the production efficiency of the LED chip; another drawback is that the deposition chamber is deposited by the epitaxial layer due to the limitation of the structure of the epitaxial layer deposition chamber. Heating rate and cooling The cooling rate of the treatment is slow. Taking the heating as an example, using the existing epitaxial layer deposition chamber to raise the LED substrate from room temperature to high temperature takes 15 to 40 minutes, occupying the epitaxial layer deposition chamber for depositing the epitaxial layer. Time; another drawback is that the use of the epitaxial layer deposition chamber for heating and cooling treatment is likely to damage the life of the epitaxial layer deposition chamber, requiring labor, financial resources and time to maintain the epitaxial layer deposition chamber, thereby reducing the epitaxial layer Utilization of the deposition chamber.

In view of the above drawbacks, the inventors propose to pre-treat the LED substrate by using a special chamber, that is, pretreating the LED substrate to be processed by using the pre-processing chamber 103 of the present invention, the pre-processing including the waiting for the The processed LED substrate is subjected to heating, cooling or cleaning. The pretreatment chamber 103 of the present invention is disposed outside of the epitaxial layer deposition chamber 102, which is disposed independently of the epitaxial layer deposition chamber 102. The pretreatment chamber 103 may be disposed at a circumference of the vacuum transmission device 104 or disposed at the vacuum transmission on the premise that the pretreatment chamber 103 is located outside the epitaxial layer deposition chamber 102. Within device 104.

With continued reference to FIG. 2, as an embodiment of the present invention, the pre-treatment chamber 103 is disposed at a periphery of the vacuum transfer device 104. The pretreatment chamber 103 of the present invention has a lower cost than the price of the epitaxial layer deposition chamber 102 because it does not need to have the function of epitaxial layer deposition. Specifically, the pretreatment chamber of the present invention The price of 103 is only 1/15~1/20 of the price of the epitaxial layer deposition chamber 102, so that the cost can be reduced, and the time for the epitaxial layer deposition chamber 102 to perform epitaxial layer deposition is increased, and the epitaxy is increased. The throughput of the layer deposition chamber 102 increases the utilization of the epitaxial layer deposition chamber 102.

As an embodiment of the present invention, the pre-processing chamber 103 is provided with a heating station for heating the LED substrate to be processed, so that the LED substrate to be processed is from the first temperature. Raise to the second temperature. The first temperature range is 10 to 30 degrees Celsius, and the second temperature should generally be equal to or close to the temperature at which the epitaxial layer deposition chamber 102 performs epitaxial layer deposition. As an embodiment of the present invention, the second temperature range is 700 to 1300 degrees Celsius.

As an embodiment of the present invention, the pre-treatment chamber 103 is provided with at least one air inlet and at least one air outlet for introducing one or more of a reducing gas or a protective gas. . The reducing gas or protective gas is used to clean the LED substrate.

When the reducing gas is at a high temperature (700 to 1300 degrees Celsius), the organic matter on the LED substrate to be processed may be reduced to a gas, and the gas is discharged through the air outlet to remove the organic matter. As an embodiment, the reducing gas may be hydrogen, ammonia or a mixture of hydrogen and ammonia. Combined with gas.

On the one hand, the protective gas can remove particles on the LED substrate to be processed, that is, the particles on the LED substrate to be processed are blown away and discharged through the air outlet, and on the other hand, the reduction can be prevented. The nature of the gas is lively and affects the safety of the equipment. In the case of high temperature, the water vapor and inorganic contaminants on the LED substrate to be treated are volatilized into a gas, and therefore, the water vapor and inorganic contaminants can also be removed. The protective gas may be an inert gas, nitrogen or a mixed gas of an inert gas and nitrogen. The inert gas may be one of helium, argon or helium or a mixture of two of helium, argon and helium or a mixture of helium, argon and helium. As a preferred embodiment, the protective gas is preferably a lower priced nitrogen gas.

It should be noted that the air inlet may only pass a reducing gas or a protective gas. However, as a preferred embodiment, the air inlet is provided with a mixed gas of the reducing gas and the protective gas. Not only the organic pollutants, inorganic pollutants, water vapor and the like on the LED substrate to be processed can be removed, but also the safety of the device is ensured. Moreover, the price of the reducing gas is high, and the reducing gas is diluted by the protective gas, and the production cost is lowered without affecting the removal of the organic pollutant. Therefore, preferably, the air inlet is supplied with a mixed gas of a reducing gas and a protective gas, for example, a mixed gas of hydrogen and a relatively low-priced nitrogen gas or a mixed gas of ammonia gas and a relatively low-priced nitrogen gas.

The pretreatment chamber 103 is provided with a temperature control device for controlling the heating station to heat the LED substrate to be processed. The pre-processing chamber 103 can also be used to perform cleaning processing on the LED substrate to be processed while heating the LED substrate to be processed.

Taking the heating and cleaning process as an example, specifically, the pre-processing chamber 103 is for the to-be-processed

The pretreatment of the LED substrate includes:

Controlling, by the temperature control device of the pre-processing chamber 103, the heating station to heat the LED substrate to be processed, so that the temperature of the LED substrate to be processed is raised from the first temperature to the second temperature. The time required for heating the LED is in the range of 5 to 15 minutes, preferably 8 to 13 minutes, for example, 10 minutes; after the LED substrate to be processed reaches the second temperature, the temperature of the pretreatment chamber 103 The control device controls the heating station to insulate the LED substrate to be processed, that is, the LED substrate to be processed is kept at the temperature for a period of time, and the time range is 1 to 25 minutes, preferably 5 to 15 minutes. For example, for 12 minutes, when the LED substrate to be processed maintains the second temperature, the air inlet of the pre-treatment chamber 103 is introduced into one or more of the reducing gas or the protective gas ( For example, a mixed gas of hydrogen and nitrogen or a mixed gas of ammonia and nitrogen). It should be noted that, in the above process, the vent may also pass one or more of the reducing gas or the protective gas when the temperature of the LED substrate to be processed is the first temperature, so that Producing the effect of cleaning the LED substrate to be processed, but only one or more of the reducing gas or the protective gas is introduced when the LED substrate to be processed maintains the second temperature, saving The amount of gas used reduces production costs. As a preferred embodiment, the pre-processing chamber 103 of the present invention firstly raises the LED substrate to be processed from 20 degrees Celsius to 950 to 1150 degrees Celsius, for example, 1050 degrees Celsius, for the required time. 5 to 15 minutes, for example, 10 minutes; then, the LED substrate to be treated is kept at the high temperature for 1 to 25 minutes, for example, 5 minutes or 15 minutes, and hydrogen and nitrogen are introduced while being kept warm. The mixed gas (the volume ratio of hydrogen to nitrogen in the mixed gas may be 2% to 50%); and then transferred to the epitaxial layer deposition chamber 102 through the vacuum transfer device 104 to perform epitaxial layer deposition.

The inventors contemplate that since the deposition time of the epitaxial layer deposition chamber 102 is generally long, the time range is usually 0.5 to 6.5 hours, and the cleaning processing time of the pretreatment chamber 103 is usually in the range of 10 to 40 minutes. If the ratio of the number of epitaxial layer deposition chambers 102 to the pretreatment chambers 103 is set to 1/1, it may cause a portion of the LED substrate to occupy the epitaxial layer deposition chamber 102 for a long time, so that the pretreatment chamber passes through the pretreatment chamber. The LED substrate after the cleaning process has no corresponding epitaxial layer deposition chamber 102 for epitaxial layer deposition, and the maximum LED chip production efficiency cannot be obtained. Therefore, the inventors propose to provide a plurality of epitaxial layer deposition chambers 102, specifically the ratio of the number of the pre-treatment chambers 103 to the epitaxial layer deposition chambers 102 is less than 1/1, for example, the ratio may be in the range of 1/2~1/5.

The inventors have considered that increasing the number of epitaxial layer deposition chambers 102 can speed up the processing speed of the LED substrate to be processed, but since the epitaxial layer deposition chamber 102 is expensive, this also increases LED chip process integration. The cost of the system 100, therefore, the inventors comprehensively consider the cost of the LED chip process integration system and the production efficiency of the conductive layer deposition process, preferably setting the ratio of the number of the pre-treatment chambers 103 to the number of epitaxial layer deposition chambers 102 It is 1/3. Since the number of the pre-processing chambers 103 is one in this embodiment, the number of corresponding epitaxial layer deposition chambers 102 is three. At the above ratio, the production efficiency of higher epitaxial layer deposition can be obtained at a reasonable cost.

In other embodiments, the ratio of the number of pre-treatment chambers 103 to the epitaxial layer deposition chamber 102 may be other values, depending on the particular application.

As a preferred embodiment of the present invention, the pre-processing chamber 103 pre-places the LED substrate The method further includes cooling the processed LED substrate. In this embodiment, the cooling process is to cool the LED substrate on which the epitaxial layer is deposited from the second temperature to the first temperature. The second temperature range is 700 to 1300 degrees Celsius, and the first temperature range is 10 to 30 degrees Celsius. The cooling treatment removes heat from the surface of the processed LED substrate by using a protective gas by introducing a protective gas into the epitaxial layer deposition chamber 102, compared to placing the LED substrate on the epitaxial layer. The deposition of the layer deposition chamber 102 increases the time for the epitaxial layer deposition chamber 102 to perform epitaxial layer deposition, and improves the efficiency of the epitaxial layer deposition process; the LED substrate deposited in the epitaxial layer is placed in a clean room or vacuum The conveyor is cooled to increase the rate of cooling.

With continued reference to FIG. 2, as a preferred embodiment of the present invention, the vacuum transmission device 104 is linear in shape, and the loading and unloading device 101, the pretreatment chamber 103, and the epitaxial layer deposition chamber 102 are linearly arranged in the The periphery of the vacuum transfer device 104.

Specifically, the vacuum transmission device 104 is a sealed cavity, and at least is provided with a vacuum pump, a robot arm and at least three sealing doors, and each sealing door corresponds to the loading and unloading device 101 and the pre-processing chamber 103, respectively. An epitaxial layer deposition chamber 102 is used as a channel for the LED substrate to be transferred from the loading and unloading device 101, the pretreatment chamber 103, and the epitaxial layer deposition chamber 102 to the vacuum transmission device. Taking the LED substrate to be processed placed on the loading and unloading device 101 as an example, a sealing door corresponding to the loading and unloading device 101 is opened, and the robot arm takes out the LED substrate to be processed from the loading and unloading device 101. Then, the sealing door is closed, the vacuum pump vacuums the vacuum transmission device 104, so that the cavity of the vacuum transmission device 104 satisfies a certain degree of vacuum, and then the robot arm will treat the to-be-processed Moving the LED substrate to a sealed door of the vacuum transfer device 104 corresponding to the pre-treatment chamber 103, and then opening the sealed door, and placing the LED substrate to be processed in the pre-treatment chamber In the chamber 103, after the LED substrate to be processed is heated and cleaned in the pre-processing chamber 103, the LED substrate to be processed is transferred to the epitaxial layer deposition chamber by the same method as described above. Room 102.

As an embodiment, the loading and unloading device 101, the pre-processing chamber 103, and the epitaxial layer deposition chamber 102 are linearly arranged on both sides of the vacuum transmission device 104, and the linear arrangement is beneficial to improve the LED chip process integration system. The integration of 100 reduces the space occupied by the clean room, thereby reducing the cost of the clean room and reducing the cost of manufacturing the LED chip.

Preferably, referring to FIG. 2, the loading and unloading device 101, the pre-processing chamber 103 is located at one side of the vacuum transmission device 104, and the epitaxial layer deposition chamber 102 is located at the vacuum transmission device. The other side of the 104 is opposite the loading and unloading device 101 and the pretreatment chamber 103. The vacuum transmission device 104 provides a vacuum transmission environment for transporting the LED substrate to be processed or processed, thereby causing a transmission environment between the pretreatment chamber 103 and the epitaxial layer deposition chamber 102. The vacuum environment prevents the LED substrate from being exposed to the clean room and is contaminated by contaminants in the clean room, thereby improving the between the epitaxial layer deposited in the epitaxial layer deposition chamber 102 and the LED substrate. Adhesion prevents failure of the LED chip due to contamination of the contaminant or affects the yield of the LED chip.

The epitaxial layer deposition chamber 102 performs epitaxial layer deposition. The epitaxial layer is a multi-layered structure. In this embodiment, the epitaxial layer is a multi-layered structure in which an N-type GaN layer, a multiple quantum well active layer, and a P-type GaN layer are stacked. Therefore, the epitaxial layer deposition chamber 102 needs to deposit an N-type GaN layer, a multiple quantum well active layer, and a P-type GaN layer on the LED substrate to be processed. The epitaxial layer deposition chamber 102 deposits an epitaxial layer at a temperature ranging from 700 to 1300 degrees Celsius.

It should be noted that, as an embodiment of the present invention, the N-type GaN layer, the multiple quantum well active layer, and the P-type GaN layer may be deposited using an epitaxial layer deposition chamber 102.

In other embodiments of the invention, when the number of epitaxial layer deposition chambers 102 is greater than or equal to

At least three, at least: an N-type GaN layer deposition chamber, a multiple quantum well active layer deposition chamber, and a P-type GaN layer deposition chamber. Wherein the N-type GaN layer deposition chamber is for depositing an N-type GaN layer, the multiple quantum well active layer deposition chamber is for depositing a multiple quantum well active layer, and the P-type GaN layer deposition chamber is used for A P-type GaN layer is deposited, and the N-type GaN layer, the multiple quantum well active layer, and the P-type GaN layer constitute the epitaxial layer. The N-type GaN layer deposition chamber, the multiple quantum well active layer deposition chamber, and the P-type GaN layer deposition chamber may be provided with independent source material supply devices for providing source materials, forming and The film material corresponding to the source material can avoid cross-contamination between the plurality of source materials. The N-type GaN layer deposition chamber, the multiple quantum well active layer deposition chamber, and the P-type GaN layer deposition chamber may be provided with independent heating stages and temperature control devices for each thin film layer (N-type GaN layer, multiple The temperature control device of the deposition chamber 102 of the quantum well active layer or the P-type GaN layer independently controls the heating station to independently heat the LED substrate, facilitating independent temperature control according to each of the thin film layer deposition chambers 102. The N-type GaN layer deposition chamber, the multiple quantum well active layer deposition chamber, and the P-type GaN layer deposition chamber deposit different film layers, so that the corresponding N-type GaN layer deposition chamber and the multiple quantum wells have The temperature of the source layer deposition chamber and the P-type GaN layer deposition chamber are different, such that the N-type GaN layer deposition chamber, the multiple quantum well active layer deposition chamber, and the P-type GaN layer deposition chamber The temperature of the chamber only needs to be set to a relatively fixed temperature, avoiding the need to repeatedly adjust the temperature of depositing various thin film layers by using one epitaxial layer deposition chamber, thereby saving process time, and due to the N-type GaN layer deposition chamber The temperature of the multiple quantum well active layer deposition chamber is relatively stable, thereby facilitating the corresponding deposition of the N-type GaN layer deposition chamber and the multiple quantum well active layer deposition chamber on different LED substrates. Uniformity of the thin film layer (N-type GaN layer, multiple quantum well active layer or P-type GaN layer).

As an embodiment, with reference to FIG. 2, the processing method of the LED chip process integration system of the present invention is specifically as follows:

First, providing an LED substrate to be processed, and placing the LED substrate to be processed on the loading and unloading device 101;

Then, the LED substrate to be processed is transferred to the pre-processing chamber 103 by the vacuum transmission device 104, and the LED substrate to be processed is heated and cleaned by the pre-processing chamber 103, and heated. For the principle and method of the cleaning process, please refer to the description of the pretreatment chamber 103 in this embodiment. Without detailed description, the surface of the LED substrate to be processed after being heated and cleaned is clean and has a certain degree. a temperature, the temperature ranges from 700 to 1300 degrees Celsius, and the temperature may correspond to a temperature of the epitaxial layer deposition process, for example, the temperature may be 1050 degrees Celsius;

Then, the vacuum transfer device 104 transfers the heated and cleaned LED substrate to be processed to the epitaxial layer deposition chamber 102, and the epitaxial layer deposition chamber 102 performs epitaxial layer deposition, epitaxial layer deposition. The parameters will be explained in detail later;

Then, the processed (ie, deposited epitaxial layer) LED substrate is transferred to the pre-processing chamber 103 by the vacuum transfer device 104, and the processed LED substrate is performed by the pre-processing chamber 103. Cooling treatment, in this embodiment, the cooling treatment is to cool from the second temperature (700-1300 degrees Celsius) to the first temperature, and the required cooling time ranges from 1 to 25 minutes, preferably 10 to 15 minutes;

Finally, the vacuum transfer device 104 transfers the processed LED substrate to the load unloading device 101.

The epitaxial layer of the present invention may form an N-type GaN layer, a multiple quantum well active layer and a P-type GaN layer by using an epitaxial layer deposition chamber 102, or may form an N-type GaN layer by using three epitaxial layer deposition chambers respectively. , a multiple quantum well active layer and a P-type GaN layer. When the epitaxial layer is formed using an epitaxial layer deposition chamber 102, the epitaxial layer deposition chamber 102 performs N-type GaN layer deposition, multiple quantum well active layer deposition, and P-type GaN deposition. Wherein: the temperature of the N-type GaN layer formed by the epitaxial layer deposition chamber 102 ranges from 700 to 1300 degrees Celsius, preferably from 1000 to 1300 degrees Celsius, preferably from 1000 to 1150 degrees Celsius, for example, 1100 degrees Celsius or 1050 degrees Celsius; It is 100 to 200 minutes, preferably 100 to 150 minutes, for example, 100 minutes, 125 minutes or 150 minutes; the thickness of the N-type GaN layer formed ranges from 1 to 3 meters, preferably from 1 to 2 meters, for example 1 敫米或2敫米; For example, when the deposition temperature of the N-type GaN layer is 1050 degrees Celsius, the time is 120 minutes, the corresponding formed N-type GaN layer has a thickness of 1.5 microns;

The temperature range of the epitaxial layer deposition chamber 102 forming the multiple quantum well active layer is

700~1300 degrees Celsius, preferably 700~800 degrees Celsius, the time range is 30-80 minutes, preferably 40-50 minutes, and the formed multi-quantum well active layer has a thickness ranging from 600 to 900 angstroms, preferably 700-800 angstroms; For example, when the deposition temperature of the multiple quantum well active layer is 750 degrees Celsius and the time is 40 minutes, the corresponding formed N-type GaN layer has a thickness of 750 angstroms;

The epitaxial layer deposition chamber 102 forms the P-type GaN layer in a temperature range of 800 to 1000 degrees Celsius, preferably 850 to 950 degrees Celsius, for example, 800 degrees Celsius, 900 degrees Celsius or 950 degrees Celsius, and the time range is 20 to 80 minutes. Preferably, the thickness of the P-type GaN layer formed is in the range of 0.2 to 0.6 μm, preferably 0.3 to 0.5 μm; for example, when the deposition temperature of the multi-P-type GaN layer is 900 ° C, the time is 25 minutes. The corresponding formed N-type GaN layer has a thickness of 0.4 μm.

When the epitaxial layers are deposited by using three epitaxial layer deposition chambers respectively, the three epitaxial layer deposition chambers 102 are respectively an N-type GaN layer deposition chamber, a multiple quantum well active layer deposition chamber, and a P-type GaN layer deposition. The chamber is deposited. The N-type GaN layer deposition chamber forms a process parameter of the N-type GaN layer, the multi-quantum well active layer deposition chamber forms a process parameter of the multi-quantum well active layer epitaxial layer, and the P-type GaN layer deposition chamber forms a P-type For the process parameters of the GaN layer, please refer to the parameters of the epitaxial layer formed by using an epitaxial deposition chamber 102, which will not be described herein.

Referring to FIG. 4, FIG. 4 is a schematic structural view of a process integration system for an LED chip according to a second embodiment of the present invention, wherein the same structures as those of the first embodiment are denoted by the same reference numerals. The LED chip process integration system 100 includes:

Loading and unloading device 101 for loading or unloading the LED substrate to be processed or processed; a vacuum transmission device 104, configured to provide a vacuum transmission environment to transmit the LED substrate to be processed or processed;

At least one pre-processing chamber 103 for pre-treating the processed or processed LED substrate; a conductive layer deposition chamber 105 located at a periphery of the vacuum transfer device 104 and the epitaxial layer deposition chamber 102 The conductive layer deposition chamber 105 is used to deposit a conductive layer.

The difference between the embodiment and the first embodiment is that the LED chip process integration system adds the conductive layer deposition chamber 105, and the rest of the structure is the same as that of the first embodiment. For details, please refer to the description of the first embodiment. Make a statement.

The conductive layer deposition chamber 105 is used for conducting a conductive layer on the LED substrate, and the conductive layer may be made of a metal layer or a transparent conductive layer, and the metal layer is one of a gold-nickel alloy, a gold-titanium alloy or another metal. The transparent conductive layer comprises one or more of ITO and ΖηΟ.

Since the conductive layer deposition chamber 105 is added, the LED chip process integration system integrates the epitaxial layer deposition process and the conductive layer deposition process in the same system, thereby the LED substrate is deposited in the epitaxial layer chamber 102 and the conductive layer deposition chamber. The transmission between the 105 is vacuum transmission, eliminating the need to move the LED substrate to the clean room, avoiding contamination of the LED substrate, and eliminating the need for repeated vacuuming.

More preferably, the conductive layer deposition chamber 105 is disposed on a side of the vacuum transfer device 104 opposite to the epitaxial layer deposition chamber 102.

Since the deposition time of the conductive layer deposition chamber 105 ranges from 10 to 40 minutes, and the deposition time of the epitaxial layer deposition chamber 102 ranges from 0.5 to 6.5 hours, the deposition time of the conductive layer deposition chamber 105 is shorter. The deposition time of the epitaxial layer deposition chamber 102 is long, so that the conductive layer deposition chamber 105 may have a problem of insufficient utilization, so the inventors optimized the number of the conductive layer deposition chambers 105 to improve the conductive layer. The utilization rate of the deposition chamber 105 is increased, and the integration degree of the LED chip process integration system of the present invention and the production efficiency of the LED chip are improved. Specifically, the ratio of the number of the epitaxial layer deposition chambers 102 to the number of the conductive layer deposition chambers 105 ranges from 2/1 to 12/1, more preferably from 4/1 to 12/1, for example, the ratio Can be 8/1~12/1.

In order to further improve the production efficiency, in the embodiment, the epitaxial layer deposition chamber 102 and the conductive layer deposition chamber 105 are respectively provided with independent exhaust systems. In other embodiments, the epitaxial layer deposition chamber 102 may also share an exhaust system with the conductive layer deposition chamber 105. When the LED chip process integration system of the embodiment is used, the method for processing the LED substrate includes:

Place the LED substrate to be processed on the loading and unloading device 101;

Using the vacuum transfer device 104, the LED substrate to be processed is placed in the pretreatment chamber 103;

The pre-processing chamber 103 heats and cleans the LED substrate to be processed, so that the surface of the LED substrate to be processed after the heating and cleaning process is clean and has a certain temperature, and the temperature range is 700~ 1300 degrees Celsius, specifically corresponding to the temperature of the epitaxial layer deposition process, in this embodiment, the temperature is 1100 degrees Celsius or 1050 degrees Celsius;

The vacuum transfer device 104 places the LED substrate to be processed in the epitaxial layer deposition chamber 102 for epitaxial layer deposition;

The vacuum transfer device 104 places the processed (i.e., deposited epitaxial layer) LED substrate in the pretreatment chamber 103;

The pre-processing chamber 103 performs a first cooling on the LED substrate, and the first cooling is specifically to reduce the LED substrate on which the epitaxial layer is deposited from a second temperature to a third temperature, and the second temperature is a temperature at which the epitaxial layer deposition process is performed, the second temperature ranges from 700 to 1100 degrees Celsius, for example, 1100 degrees Celsius or 1050 degrees Celsius, and the third temperature is a temperature at which the conductive layer deposition process is performed, for example, 100 to 400 degrees Celsius. Preferably 150 to 350 degrees Celsius;

The vacuum transfer device 104 places the first cooled LED substrate in the conductive layer deposition chamber 105;

The conductive layer deposition chamber 105 deposits a conductive layer on the epitaxial layer of the first cooled LED substrate;

The vacuum transfer device 104 places the processed (i.e., deposited conductive layer) LED substrate in the pretreatment chamber 103;

The pre-processing chamber 103 performs second cooling on the processed LED substrate, and the second cooling is to reduce the third temperature when the LED substrate is deposited from the conductive layer to a first temperature;

The vacuum transfer device 104 transfers the second cooled LED substrate to a loading and unloading device to complete an epitaxial layer and a conductive layer deposition process.

Referring to FIG. 5, FIG. 5 is a schematic structural diagram of an LED chip process integration system according to a third embodiment of the present invention, wherein the same structures as those in the first embodiment and the second embodiment are given the same reference numerals. Place The LED chip process integration system 100 includes:

At least one pretreatment chamber ₁₀₃ for pretreating the LED substrate to be processed or processed;

A conductive layer deposition chamber 105 is located at a periphery of the vacuum transfer device 104 and the epitaxial layer deposition chamber 102 for depositing a conductive layer.

The difference between this embodiment and the second embodiment is that the vacuum transmission device has a polygonal shape, and the pretreatment chamber 103, the loading and unloading device 101, the epitaxial layer deposition chamber 102, and the conductive layer deposition chamber 105 are arranged. At the periphery of the vacuum transmission device 104. In other embodiments, the vacuum transfer device may also be circular, elliptical, trapezoidal, rhombic or other polygonal shape.

Specifically, referring to FIG. 5, the pre-processing chamber 103 is connected to the vacuum transmission device 104, and the conductive layer deposition chamber 105 is linearly connected to the pre-processing chamber 103, and the conductive layer deposition chamber The chamber 105 is located on a side of the pretreatment chamber 103 remote from the vacuum transmission device 104, which can reduce the space of the clean room occupied by the LED chip process integration system 100 and reduce the cost of the clean room.

In this embodiment, the pretreatment chamber 103, the loading and unloading device 101, and the epitaxial layer deposition chamber

102. The structure of the conductive layer deposition chamber 105 and the vacuum transmission device 104 are the same as those of the first embodiment and the second embodiment. Please refer to the related content in the first embodiment and the second embodiment of the present invention, and details are not described herein again. .

For the processing method of depositing the epitaxial layer and the conductive layer on the LED substrate in the LED chip process integration system of this embodiment, reference may be made to the processing method of the LED chip process integration system of the second embodiment, and details are not described herein again.

Please refer to FIG. 6. FIG. 6 is a schematic structural diagram of an LED chip process integration system according to a fourth embodiment of the present invention, wherein the same structures as those of the first embodiment, the second embodiment, and the third embodiment are denoted by the same reference numerals. The chip process integration system 100 includes: a loading and unloading device 101 for placing an LED substrate to be processed and a processed LED substrate; Loading and unloading device 101 for loading or unloading the LED substrate to be processed or processed; vacuum transmission device 104 for providing a vacuum transmission environment for transmitting the LED substrate to be processed or processed;

At least one pre-processing chamber ₁₀₃ for pre-treating the processed or processed LED substrate; a conductive layer deposition chamber 105 located at a periphery of the vacuum transfer device 104 and the epitaxial layer deposition chamber 102 The conductive layer deposition chamber 105 is used to deposit a conductive layer.

The shape of the vacuum transfer device 104 in the present embodiment and the vacuum transfer device 104 in the second embodiment are both linear. The difference between this embodiment and the second embodiment is that the number of the load unloading devices 101 is plural. , the figure shows three. The loading and unloading device 101 is located at one side of the vacuum transfer device 104, and the epitaxial layer deposition chamber 102 and the conductive layer deposition chamber 105 are located opposite to the loading and unloading device 101 of the vacuum transfer device 104. One side.

Wherein, the position of the conductive layer deposition chamber 105 may also be disposed at other positions of the vacuum transmission device 104. For details, please refer to FIG. 7. FIG. 7 is a schematic structural diagram of an LED chip process integration system according to a fifth embodiment of the present invention. The present embodiment differs from the fourth embodiment in that the conductive layer deposition chamber 105 is located on a side of the vacuum transfer device 103 that is different from the load unloading device 101 and the epitaxial layer deposition chamber 102.

Referring to FIG. 8, FIG. 8 is a schematic view showing the structure of an LED chip process integration system according to a sixth embodiment of the present invention, and the same structures as those in the first to fifth embodiments are denoted by the same reference numerals. The difference between this embodiment and the second embodiment is that the conductive layer deposition chamber 105 is different in position of the LED chip process integration system, and the conductive layer deposition chamber 105 is located at the periphery of the vacuum transmission device 104. And the conductive layer deposition chamber 105 is located between the transfer unloading device 101 and the epitaxial layer deposition chamber 102.

In summary, the LED chip process integration system of the present invention includes a loading and unloading device, a pretreatment chamber, an epitaxial layer deposition chamber, and a vacuum transmission device, wherein the pretreatment chamber Located outside the epitaxial layer deposition chamber, the pre-treatment chamber is dedicated to pre-treating the LED substrate, thereby saving the step of pre-treating the LED substrate by the epitaxial layer deposition chamber, and adding an epitaxial layer deposition chamber. The time for depositing the epitaxial layer reduces the cost and improves the production efficiency of the epitaxial layer deposition chamber, and the invention greatly reduces the cost of manufacturing the LED chip. The output of the LED chip is increased, and in a preferred embodiment, the present invention also integrates the conductive layer deposition chamber into the LED chip process system, further improving the production efficiency of the LED chip manufacturing and increasing the yield of the LED chip.

The present invention has been disclosed in the preferred embodiments as described above, but it is not intended to limit the invention, and the present invention may be utilized by the method and technical contents disclosed above without departing from the spirit and scope of the invention. The technical solutions make possible changes and modifications, and therefore, the scope of protection of the technical solutions of the present invention is not deviated from the present invention.

Claims

Rights request

1. An LED chip process integration system, comprising:

Loading an unloading device for loading or unloading a processed or processed LED substrate; a vacuum transfer device for providing a vacuum transmission environment for transmitting the to-be-processed or processed

LED substrate;

It is characterized in that it further comprises:

2. The LED chip process integration system according to claim 1, wherein the pre-processing chamber is located at a periphery of the vacuum transmission device for heating, cleaning or cooling the LED substrate to be processed. The processed LED substrate is processed or cooled.

The LED chip process integration system according to claim 1 or 2, wherein the pre-processing chamber is provided with a heating stage, and the heating stage is configured to heat-process the LED substrate to make the LED substrate It rises from the first temperature to the second temperature.

4. The LED chip process integration system according to claim 3, wherein the temperature of the first temperature ranges from 10 to 30 degrees Celsius, and the temperature of the second temperature ranges from 700 to 1300 degrees Celsius.

The LED chip process integration system according to claim 3, wherein the pre-treatment chamber is provided with at least one air inlet and at least one air outlet, and the air inlet is used for introducing a reducing gas or protecting One or more of the gas, the reducing gas or the protective gas is used for cleaning the LED substrate.

6. The LED chip process integration system according to claim 5, wherein the reducing gas is hydrogen or ammonia, and the protective gas is one or more of an inert gas or nitrogen.

7. The LED chip process integration system according to claim 6, wherein the pre-processing chamber is provided with a temperature control device, and the temperature control device is configured to control the heating station to be within 5 to 15 minutes. Heating the LED substrate from the first temperature to the second temperature, and maintaining the LED substrate at the second temperature for 1 to 25 minutes; The air inlet is configured to pass one or more of the reducing gas or the protective gas when the LED substrate maintains the second temperature.

8. The LED chip process integration system according to claim 7, wherein the deposition time of the epitaxial layer deposition chamber ranges from 0.5 to 6.5 hours.

9. The LED chip process integration system of claim 8, wherein a ratio of the number of pre-processing chambers to the number of epitaxial layer deposition chambers ranges from 1/2 to 1/5.

10. The LED chip process integration system of claim 9, wherein a ratio of the number of pre-processing chambers to the number of epitaxial layer deposition chambers is 1/3.

11. The LED chip process integration system of claim 8, further comprising: a conductive layer deposition chamber located at a periphery of the vacuum transfer device and the epitaxial layer deposition chamber, the conductive layer deposition chamber The chamber is used to deposit a conductive layer.

12. The LED chip process integration system according to claim 11, wherein the vacuum transmission device has a linear shape, the loading and unloading device, the pretreatment chamber, the epitaxial layer deposition chamber, and the conductive layer deposition chamber. The chambers are linearly arranged around the circumference of the vacuum transfer device.

13. The LED chip process integration system according to claim 11, wherein the vacuum transmission device has a polygonal or circular shape, and the loading and unloading device, the pretreatment chamber, the epitaxial layer deposition chamber, and the conductive A layer deposition chamber is located at the periphery of the vacuum transfer device.

14. The LED chip process integration system according to claim 13, wherein the pretreatment chamber is connected to the vacuum transmission device, and the conductive layer deposition chamber is linearly connected to the pretreatment chamber. The conductive layer deposition chamber is located on a side of the pretreatment chamber that is remote from the vacuum transfer device.

The LED chip process integration system according to claim 11, wherein the conductive layer is a metal layer or a transparent conductive layer, and the metal layer is one of a gold-nickel alloy, a gold-titanium alloy or another metal. Or a plurality of, the transparent conductive layer is one or more of ITO and ΖηΟ.

The LED chip process integration system according to claim 11, wherein the epitaxial layer deposition chamber and the conductive layer deposition chamber are respectively provided with independent exhaust systems.

The LED chip process integration system according to claim 11, wherein the deposition time of the conductive layer deposition chamber ranges from 10 to 40 minutes.

18. The LED chip process integration system of claim 17, wherein the ratio of the number of epitaxial layer deposition chambers to the number of conductive layer deposition chambers ranges from 2/1 to 12/1.

19. The LED chip process integration system of claim 18, wherein the ratio of the number of epitaxial layer deposition chambers to the number of conductive layer deposition chambers ranges from 4/1 to 12/1.

20. The LED chip process integration system of claim 19, wherein the ratio of the number of epitaxial layer deposition chambers to the number of conductive layer deposition chambers ranges from 8/1 to 12/1.

21. The LED chip process integration system of claim 1, wherein the epitaxial layer deposition chamber is for depositing an N-type GaN layer, a multiple quantum well active layer, and a P-type GaN layer, the N-type The GaN layer, the multiple quantum well active layer, and the P-type GaN layer constitute the epitaxial layer.

The LED chip process integration system according to claim 1, wherein the number of the epitaxial layer deposition chambers is at least three, including: an N-type GaN layer deposition chamber, and a multiple quantum well active layer deposition. a chamber and a P-type GaN layer deposition chamber for depositing an N-type GaN layer, the multiple quantum well active layer deposition chamber for depositing a multi-quantum well active layer, The P-type GaN layer deposition chamber is used to deposit a P-type GaN layer, and the N-type GaN layer, the multiple quantum well active layer, and the P-type GaN layer constitute the epitaxial layer.

23. The method of processing an LED chip process integration system according to claim 1, wherein the method comprises:

Placing the LED substrate to be processed on the loading and unloading device;

24. The method of processing an LED chip process integration system according to claim 23, wherein the pre-processing comprises heating, cooling or cleaning the LED substrate.

The processing method of the LED chip process integration system according to claim 23, further comprising:

The pretreatment chamber performs a first cooling process on the LED substrate;

26. The method of processing an LED chip process integration system according to claim 25, wherein The method further includes: transmitting the LED substrate on which the conductive layer is deposited to the pretreatment chamber for performing a second cooling process.

The processing method of the LED chip process integration system according to claim 23, wherein the preprocessing comprises:

Holding the LED substrate at the second temperature for 1 to 25 minutes;

The processing method of the LED chip process integration system according to claim 27, wherein the reducing gas is hydrogen or ammonia, and the protective gas is one or more of an inert gas or nitrogen. .

The processing method of the LED chip process integration system according to claim 23, further comprising: transmitting the LED substrate on which the epitaxial layer is deposited to the pretreatment chamber for cooling processing, wherein the cooling process is The temperature of the LED substrate is lowered from a second temperature to a first temperature, the first temperature has a temperature range of 10 to 30 degrees Celsius, and the second temperature has a temperature range of 700 to 1300 degrees Celsius.

The processing method of the LED chip process integration system according to claim 25, wherein the first cooling process is to reduce the temperature of the LED substrate from a second temperature to a third temperature, the second The temperature range of the temperature is 700 to 1300 degrees Celsius, and the temperature of the third temperature ranges from 100 to 400 degrees Celsius.

31. The method of processing an LED chip process integration system according to claim 23, wherein the epitaxial layer is deposited for a time ranging from 0.5 to 6.5 hours.

32. The method of processing an LED chip process integration system according to claim 31, further comprising:

The processing method of the LED chip process integration system according to claim 26, wherein the second cooling process is to cool the LED substrate from 100-400 degrees Celsius to 10 to 30 degrees. Degree.

34. The method of processing an LED chip process integrated system according to claim 23, wherein the epitaxial layer comprises an N-type GaN layer, a multiple quantum well active layer, and a P-type GaN layer.

The processing method of the LED chip process integration system according to claim 34, wherein the epitaxial layer deposits an N-type GaN layer, a multi-quantum well active layer, and a P-type by using one of the epitaxial layer deposition chambers. The N-type GaN layer, the multiple quantum well active layer, and the P-type GaN layer are respectively deposited by the GaN layer or by using the three epitaxial layer deposition chambers.

The processing method of the LED chip process integration system according to claim 33, wherein the epitaxial layer deposition chamber deposits the N-type GaN layer at a temperature ranging from 1000 to 1300 degrees Celsius, and the time range is 100~ 200 minutes, the thickness of the N-type GaN layer formed is in the range of 1 to 3 microns;