CN114361011A - Photoetching production process of PG (patterned conductor) chip - Google Patents
Photoetching production process of PG (patterned conductor) chip Download PDFInfo
- Publication number
- CN114361011A CN114361011A CN202111532103.9A CN202111532103A CN114361011A CN 114361011 A CN114361011 A CN 114361011A CN 202111532103 A CN202111532103 A CN 202111532103A CN 114361011 A CN114361011 A CN 114361011A
- Authority
- CN
- China
- Prior art keywords
- photoresist
- glass
- silicon wafer
- viscosity
- glass powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
Abstract
The invention provides a PG chip photoetching production process, and relates to the technical field of semiconductor device processing. The method comprises the steps of preparing a photoresist with the viscosity of 300-400 mPa.S; adding glass powder into the photoresist, filling the photoresist into a ceramic pot containing ceramic balls, and grinding and uniformly mixing the glass powder in a rolling mode to obtain glass slurry; the mass of the glass powder is 1-2 times of that of the photoresist; uniformly coating the glass slurry on the surface of a silicon wafer through a coating machine, and transferring the pattern of a photoetching plate onto the silicon wafer through exposure; removing the redundant glass slurry at the center of the silicon wafer in a spraying and developing mode; the glass paste configuration reduces the viscosity, improves the fluidity of the glass paste on the surface of the wafer, and covers more uniformly, and can reduce the spraying pressure and time during development due to the reduction of the viscosity, so that the permeation of organic solution into glass powder is reduced or avoided, and after the glass is sintered, the glass can not change the direction during the melting and crystallization process, and the generation of cavities is avoided.
Description
Technical Field
The invention relates to the technical field of semiconductor device processing, in particular to a PG chip photoetching production process.
Background
In the diode chip processing process, the PG technology is a relatively common production technology and is characterized in that the glass slurry which does not need to be reserved is removed by utilizing the mixing of photoresist and glass powder in an exposure and development mode, the organic solvent of the glass slurry is volatilized in a sintering mode, and the glass passivation layer around the PN junction of the chip is formed after recrystallization and molding. The process has the advantages that the glass slurry is coated on the surface of the silicon wafer in a spin coating mode, the thickness of the glass can be freely controlled, and the thickness of the glass in each area is uniform and stable.
For laser cutting, the bottom of the groove of the conventional PG chip is provided with a cutting channel, after the PG chip is cut, when the environmental humidity is large or the voltage of the PG chip is too high, the PG chip is easy to ignite in a test, namely, the instantaneous voltage is too large, a table surface test needle is easy to generate an electric arc phenomenon with the groove, so that the PG chip is burnt and loses efficacy, and in order to solve the problem, an isolation layer needs to be added to the groove, namely, the groove is coated with glass.
However, when the silicon wafer is coated with glass, the development can be performed only by a spraying method which has a certain pressure, when the useless glass on the mesa is removed, the glass in the groove is also affected to a certain extent, and after the glass is sintered and crystallized, the glass in the groove is hollow, so that the glass passivation capability is lost.
Disclosure of Invention
Technical problem to be solved
Aiming at the defects of the prior art, the invention provides a PG chip photoetching production process, which solves the technical problem that after glass is sintered, the groove glass has a cavity.
(II) technical scheme
In order to achieve the purpose, the invention is realized by the following technical scheme:
a PG chip photoetching production process comprises the following steps:
s1, preparing a photoresist with the viscosity of 300-400 mPa.S;
s2, adding glass powder into the photoresist, filling the photoresist into a ceramic pot containing ceramic balls, and grinding and uniformly mixing the glass powder in a rolling mode to obtain glass slurry; the mass of the glass powder is 1-2 times of that of the photoresist;
s3, uniformly coating the glass slurry on the surface of a silicon wafer through a coating machine, and transferring the pattern of the photoetching plate onto the silicon wafer through exposure;
and S4, removing the redundant glass slurry at the center of the silicon wafer in a spray development mode.
Preferably, the method further comprises the following steps:
s5, sintering the sprayed and developed silicon wafer, and cooling and crystallizing in a crystallization mode;
and S6, performing final operation on the silicon wafer after sintering and crystallization to a state after segmentation by sequentially performing photoetching, deoxidation, surface metallization and cutting.
Preferably, the photoresist in S1 is specifically obtained by a high viscosity photoresist plus xylene configuration.
Preferably, in S4: setting the pressure of the spray head to be 5-20 Mpa; the developing time is controlled to be 8-12 s.
Preferably, the photoresist viscosity in S1 is 300 mpa.s;
preferably, the mass of the glass powder in the S2 is 1 time of that of the photoresist;
preferably, the pressure of the nozzle in S4 is set to 5Mpa, and the developing time is controlled to 8S.
Preferably, the photoresist viscosity in S1 is 400 mpa.s;
preferably, the mass of the glass powder in the S2 is 2 times of that of the photoresist;
preferably, the pressure of the nozzle in S4 is set to 20Mpa, and the developing time is controlled to 12S.
Preferably, the photoresist viscosity in S1 is 350 mpa.s;
preferably, the mass of the glass powder in the S2 is 1.5 times of that of the photoresist;
preferably, the pressure of the nozzle in S4 is set to 12.5Mpa, and the developing time is controlled to 10S.
(III) advantageous effects
The invention provides a photoetching production process of a PG chip. Compared with the prior art, the method has the following beneficial effects:
the method comprises the steps of preparing a photoresist with the viscosity of 300-400 mPa.S; adding glass powder into the photoresist, filling the photoresist into a ceramic pot containing ceramic balls, and grinding and uniformly mixing the glass powder in a rolling mode to obtain glass slurry; the mass of the glass powder is 1-2 times of that of the photoresist; uniformly coating the glass slurry on the surface of a silicon wafer through a coating machine, and transferring the pattern of a photoetching plate onto the silicon wafer through exposure; removing the redundant glass slurry at the center of the silicon wafer in a spraying and developing mode; the glass paste configuration disclosed by the invention can reduce the viscosity, improve the fluidity of the glass paste on the surface of the wafer and achieve more uniform coverage, and can reduce the spraying pressure and time during development due to the reduction of the viscosity, so that the permeation of organic solution into glass powder is reduced or avoided, and after the glass is sintered, the glass can not change the direction in the melting and crystallization process, thereby avoiding the generation of cavities.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic flow chart of a PG chip lithography production process according to an embodiment of the present invention;
fig. 2 is a schematic flow chart of another PG chip lithography manufacturing process according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention are clearly and completely described, and it is obvious that the described embodiments are a part of the embodiments of the present invention, but not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The embodiment of the application provides a PG chip photoetching production process, and solves the technical problem that after glass is sintered, groove glass is hollow.
In order to solve the technical problems, the general idea of the embodiment of the application is as follows:
the method comprises the steps of preparing a photoresist with the viscosity of 300-400 mPa.S; adding glass powder into the photoresist, filling the photoresist into a ceramic pot containing ceramic balls, and grinding and uniformly mixing the glass powder in a rolling mode to obtain glass slurry; the mass of the glass powder is 1-2 times of that of the photoresist; uniformly coating the glass slurry on the surface of a silicon wafer through a coating machine, and transferring the pattern of a photoetching plate onto the silicon wafer through exposure; removing the redundant glass slurry at the center of the silicon wafer in a spraying and developing mode; the glass paste configuration disclosed by the invention can reduce the viscosity, improve the fluidity of the glass paste on the surface of the wafer and achieve more uniform coverage, and can reduce the spraying pressure and time during development due to the reduction of the viscosity, so that the permeation of organic solution into glass powder is reduced or avoided, and after the glass is sintered, the glass can not change the direction in the melting and crystallization process, thereby avoiding the generation of cavities.
In order to better understand the technical solution, the technical solution will be described in detail with reference to the drawings and the specific embodiments.
As shown in fig. 1, an embodiment of the present invention provides a PG chip lithography production process, including:
s1, preparing the photoresist with the viscosity of 300-400 mPa.S.
The photoresist is specifically obtained by high-viscosity photoresist plus xylene configuration.
S2, adding glass powder into the photoresist, filling the photoresist into a ceramic pot containing ceramic balls, and grinding and uniformly mixing the glass powder in a rolling mode to obtain glass slurry; the mass of the glass powder is 1-2 times of that of the photoresist;
s3, uniformly coating the glass slurry on the surface of a silicon wafer through a coating machine, and transferring the pattern of the photoetching plate onto the silicon wafer through exposure;
and S4, removing the redundant glass slurry at the center of the silicon wafer in a spray development mode.
It should be noted that in the step, the pressure of the spray head is set to be 5-20 Mpa, which is to avoid the situation that the groove glass slurry is removed by spraying due to overlarge pressure; the developing time is controlled to be 8-12 s, and the situation that the excessive glass slurry on the table top cannot be removed due to too short time is considered, and the groove glass is lost due to too long time.
In an embodiment, as shown in fig. 2, the PG chip lithography production process provided by the present application further includes:
s5, sintering the sprayed and developed silicon wafer, and cooling and crystallizing in a crystallization mode;
and S6, performing final operation on the silicon wafer after sintering and crystallization to a state after segmentation by sequentially performing photoetching, deoxidation, surface metallization and cutting.
Example 1:
a PG chip photoetching production process comprises the following steps:
s1, a photoresist having a viscosity of 300mpa.s was prepared.
The photoresist is specifically obtained by high-viscosity photoresist plus xylene configuration.
S2, adding glass powder into the photoresist, filling the photoresist into a ceramic pot containing ceramic balls, and grinding and uniformly mixing the glass powder in a rolling mode to obtain glass slurry; the mass of the glass powder is 1 time of that of the photoresist;
s3, uniformly coating the glass slurry on the surface of a silicon wafer through a coating machine, and transferring the pattern of the photoetching plate onto the silicon wafer through exposure
It should be noted that the trench region is completely exposed to the light source in this step.
And S4, removing the redundant glass slurry at the center of the silicon wafer in a spray development mode.
It should be noted that in this step, the pressure of the nozzle is set to 5 Mpa; the development time was controlled at 8 s.
S5, feeding the silicon wafer after spray development into a sintering furnace for sintering, and cooling and crystallizing in a crystallization mode;
and S6, performing final operation on the silicon wafer after sintering and crystallization to a state after segmentation by sequentially performing photoetching, deoxidation, surface metallization and cutting.
Example 2:
a PG chip photoetching production process comprises the following steps:
s1, a photoresist having a viscosity of 400mpa.s was prepared.
The photoresist is specifically obtained by high-viscosity photoresist plus xylene configuration.
S2, adding glass powder into the photoresist, filling the photoresist into a ceramic pot containing ceramic balls, and fully grinding and uniformly mixing the glass powder in a rolling mode to obtain glass slurry; the mass of the glass powder is 2 times of that of the photoresist;
s3, uniformly coating the glass slurry on the surface of a silicon wafer through a coating machine, and transferring the pattern of the photoetching plate onto the silicon wafer through exposure;
and S4, removing the redundant glass slurry at the center of the silicon wafer in a spray development mode.
It should be noted that in this step, the pressure of the nozzle is set to 20 Mpa; the development time was controlled at 12 s.
S5, feeding the silicon wafer after spray development into a sintering furnace for sintering, and cooling and crystallizing in a crystallization mode;
and S6, performing final operation on the silicon wafer after sintering and crystallization to a state after segmentation by sequentially performing photoetching, deoxidation, surface metallization and cutting.
Example 3:
a PG chip photoetching production process comprises the following steps:
s1, preparing a photoresist with a viscosity of 350 mpa.s.
The photoresist is specifically obtained by high-viscosity photoresist plus xylene configuration.
S2, adding glass powder into the photoresist, filling the photoresist into a ceramic pot containing ceramic balls, and grinding and uniformly mixing the glass powder in a rolling mode to obtain glass slurry; the mass of the glass powder is 1.5 times of that of the photoresist;
s3, uniformly coating the glass slurry on the surface of a silicon wafer through a coating machine, and transferring the pattern of the photoetching plate onto the silicon wafer through exposure;
and S4, removing the redundant glass slurry at the center of the silicon wafer in a spray development mode.
It should be noted that in this step, the pressure of the nozzle is set to 12.5 Mpa; the development time was controlled at 10 s.
S5, feeding the silicon wafer after spray development into a sintering furnace for sintering, and cooling and crystallizing in a crystallization mode;
and S6, performing final operation on the silicon wafer after sintering and crystallization to a state after segmentation by sequentially performing photoetching, deoxidation, surface metallization and cutting.
The silicon chip groove glass forms finally obtained by comparing the above embodiments 1 to 3 are as follows: example 1 results: the development of local areas is not thorough, the table top glass is adhered, and the local glass is too thick; example 2 results: the proportion of glass cavities in local areas is different from 10 percent to 15 percent; example 3 results: the whole glass has no adhesion, good thickness uniformity and no cavity phenomenon.
By combining the experimental results, the glass paste configuration disclosed by the embodiment of the invention can reduce the viscosity, improve the fluidity of the glass paste on the surface of the wafer, and achieve more uniform coverage, and can reduce the spraying pressure and time during development due to the reduction of the viscosity, so as to reduce or avoid the permeation of organic solution into glass powder, and after the glass is sintered, the glass cannot change direction during the melting and crystallization process, thereby avoiding the generation of cavities.
It should be added that the photoresist itself is organic, and when flowing from the mesa to the trench during the coating process, the higher the viscosity and the lower the fluidity, the more the glass slurry is aggregated in the local area, and the uniformity is good from the macroscopic point of view, but microscopically, the glass distribution in these local areas is also very different, and the glass sintering crystallization has a cohesive effect (i.e. where the glass is aggregated in a large amount), so that the thin glass is aggregated in the thick glass, and the void is formed. In addition, when the viscosity is too high, the local glass is too thick, and the developing process needs to be carried out by using larger pressure and longer time, so that the organic solvent is easy to permeate into the glass, the original glass gathering direction is changed in the melting process of the glass, and finally the glass cavity phenomenon is generated.
In summary, compared with the prior art, the method has the following beneficial effects:
the method comprises the steps of preparing a photoresist with the viscosity of 300-400 mPa.S; adding glass powder into the photoresist, filling the photoresist into a ceramic pot containing ceramic balls, and grinding and uniformly mixing the glass powder in a rolling mode to obtain glass slurry; the mass of the glass powder is 1-2 times of that of the photoresist; uniformly coating the glass slurry on the surface of a silicon wafer through a coating machine, and transferring the pattern of a photoetching plate onto the silicon wafer through exposure; removing the redundant glass slurry at the center of the silicon wafer in a spraying and developing mode; the glass paste configuration disclosed by the invention can reduce the viscosity, improve the fluidity of the glass paste on the surface of the wafer and achieve more uniform coverage, and can reduce the spraying pressure and time during development due to the reduction of the viscosity, so that the permeation of organic solution into glass powder is reduced or avoided, and after the glass is sintered, the glass can not change the direction in the melting and crystallization process, thereby avoiding the generation of cavities.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (7)
1. A PG chip photoetching production process is characterized by comprising the following steps:
s1, preparing a photoresist with the viscosity of 300-400 mPa.S;
s2, adding glass powder into the photoresist, filling the photoresist into a ceramic pot containing ceramic balls, and grinding and uniformly mixing the glass powder in a rolling mode to obtain glass slurry; the mass of the glass powder is 1-2 times of that of the photoresist;
s3, uniformly coating the glass slurry on the surface of a silicon wafer through a coating machine, and transferring the pattern of the photoetching plate onto the silicon wafer through exposure;
and S4, removing the redundant glass slurry at the center of the silicon wafer in a spray development mode.
2. The PG chip lithography production process of claim 1, further comprising:
s5, sintering the sprayed and developed silicon wafer, and cooling and crystallizing in a crystallization mode;
and S6, performing final operation on the silicon wafer after sintering and crystallization to a state after segmentation by sequentially performing photoetching, deoxidation, surface metallization and cutting.
3. The PG chip lithographic production process of claim 2, wherein the photoresist in S1 is obtained by a high viscosity photoresist plus xylene configuration.
4. The PG chip lithography production process of any of claims 1-3, wherein in S4: setting the pressure of the spray head to be 5-20 Mpa; the developing time is controlled to be 8-12 s.
5. The PG chip lithography production process of claim 4,
the photoresist in the S1 has the viscosity of 300 mPa.S;
and/or the mass of the glass powder in the S2 is 1 time of that of the photoresist;
and/or the pressure of the spray head in the step S4 is set to be 5Mpa, and the developing time is controlled to be 8S.
6. The PG chip lithography production process of claim 4,
the photoresist in the S1 has the viscosity of 400 mPa.S;
and/or the mass of the glass powder in the S2 is 2 times of that of the photoresist;
and/or the pressure of the spray head in the step S4 is set to be 20Mpa, and the developing time is controlled to be 12S.
7. The PG chip lithography production process of claim 4,
the photoresist in the S1 has the viscosity of 350 mPa.S;
and/or the mass of the glass powder in the S2 is 1.5 times of that of the photoresist;
and/or the pressure of the spray head in the step S4 is set to be 12.5Mpa, and the developing time is controlled to be 10S.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111532103.9A CN114361011B (en) | 2021-12-15 | 2021-12-15 | Photoetching production process of PG (patterned conductor) chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111532103.9A CN114361011B (en) | 2021-12-15 | 2021-12-15 | Photoetching production process of PG (patterned conductor) chip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114361011A true CN114361011A (en) | 2022-04-15 |
| CN114361011B CN114361011B (en) | 2022-08-19 |
Family
ID=81099744
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111532103.9A Active CN114361011B (en) | 2021-12-15 | 2021-12-15 | Photoetching production process of PG (patterned conductor) chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114361011B (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03229418A (en) * | 1990-02-05 | 1991-10-11 | Matsushita Electron Corp | Manufacture of semiconductor device |
| CN104614939A (en) * | 2015-01-09 | 2015-05-13 | 苏州瑞红电子化学品有限公司 | Negative photoresist composition for being mixed with glass powder in GPP process |
| CN107561862A (en) * | 2017-09-20 | 2018-01-09 | 苏州瑞红电子化学品有限公司 | Suitable for the negative photoresist of GPP diodes manufacture |
| CN108461381A (en) * | 2018-01-29 | 2018-08-28 | 郭光辉 | A kind of manufacture craft of semiconductor GPP rectification chips |
| CN108493107A (en) * | 2018-04-19 | 2018-09-04 | 如皋市大昌电子有限公司 | A kind of manufacturing method of highly reliable glassivation high voltage silicon rectifier stack |
| CN110890283A (en) * | 2019-11-29 | 2020-03-17 | 扬州杰利半导体有限公司 | Improved method for passivating diode glass |
| CN111370301A (en) * | 2020-03-19 | 2020-07-03 | 常州星海电子股份有限公司 | Production process of super-high-power light resistance glass chip |
| CN113192853A (en) * | 2021-05-19 | 2021-07-30 | 上海音特电子有限公司 | Technological method for power semiconductor PN junction protection |
-
2021
- 2021-12-15 CN CN202111532103.9A patent/CN114361011B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03229418A (en) * | 1990-02-05 | 1991-10-11 | Matsushita Electron Corp | Manufacture of semiconductor device |
| CN104614939A (en) * | 2015-01-09 | 2015-05-13 | 苏州瑞红电子化学品有限公司 | Negative photoresist composition for being mixed with glass powder in GPP process |
| CN107561862A (en) * | 2017-09-20 | 2018-01-09 | 苏州瑞红电子化学品有限公司 | Suitable for the negative photoresist of GPP diodes manufacture |
| CN108461381A (en) * | 2018-01-29 | 2018-08-28 | 郭光辉 | A kind of manufacture craft of semiconductor GPP rectification chips |
| CN108493107A (en) * | 2018-04-19 | 2018-09-04 | 如皋市大昌电子有限公司 | A kind of manufacturing method of highly reliable glassivation high voltage silicon rectifier stack |
| CN110890283A (en) * | 2019-11-29 | 2020-03-17 | 扬州杰利半导体有限公司 | Improved method for passivating diode glass |
| CN111370301A (en) * | 2020-03-19 | 2020-07-03 | 常州星海电子股份有限公司 | Production process of super-high-power light resistance glass chip |
| CN113192853A (en) * | 2021-05-19 | 2021-07-30 | 上海音特电子有限公司 | Technological method for power semiconductor PN junction protection |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114361011B (en) | 2022-08-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN114361011B (en) | Photoetching production process of PG (patterned conductor) chip | |
| KR20060041961A (en) | Manufacturing method of mesatype semiconductor device | |
| CN110690300B (en) | Laser-induced transfer printing method for electrode grid line of photovoltaic solar cell | |
| US4202916A (en) | Surfacing process for the stabilization of semiconductor bodies employing glass containing quartz passivating layer | |
| CN103094093B (en) | A kind of method of light blockage coating and device | |
| TW201214742A (en) | Composition for forming impurity diffusion layer, composition for forming n-type diffusion layer, method for forming n-type diffusion layer, composition for forming p-type diffusion layer, method for forming p-type diffusion layer | |
| WO2013011986A1 (en) | Composition that forms n-type diffusion layer, n-type diffusion layer manufacturing method and solar cell element manufacturing method | |
| CN101078890B (en) | Method for eliminating air bubble from photoresist and stud bump making method | |
| JP6235190B1 (en) | Manufacturing method of semiconductor device | |
| CN106531643A (en) | Manufacturing method of fan-out packaging structure | |
| CN115691856A (en) | Paste for laser printing | |
| US6387574B1 (en) | Substrate for transfer mask and method for manufacturing transfer mask by use of substrate | |
| US20220399424A1 (en) | Pixel structure, manufacturing method thereof, and display device | |
| CN102437106A (en) | Method for improving repeatability of multi-time photoetching on contact hole/through hole | |
| CN107993924B (en) | The method of residual defects after removal photoresist developing | |
| JP6582747B2 (en) | Composition for forming n-type diffusion layer, method for producing semiconductor substrate having n-type diffusion layer, and method for producing solar cell | |
| CN113659000B (en) | Manufacturing method of inclined field plate, HEMT device and manufacturing method of HEMT device | |
| JPS6347256B2 (en) | ||
| CN117348345A (en) | Gluing method for optimizing thickness of photoresist in center of wafer | |
| JPS5817625A (en) | Manufacture of semiconductor device | |
| JPH10270386A (en) | Lsi passivation via | |
| CN114609868A (en) | Method for verifying photoresist defects | |
| WO2016068315A1 (en) | Composition for forming n-type diffusion layer, method for producing n-type diffusion layer, and method for manufacturing solar cell element | |
| CN116913788A (en) | Wafer processing method, equipment and semiconductor device manufacturing method | |
| CN117672814A (en) | Passivation layer growth method and insulated gate bipolar transistor wafer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |