CN104614939A - Negative photoresist composition for being mixed with glass powder in GPP process - Google Patents
Negative photoresist composition for being mixed with glass powder in GPP process Download PDFInfo
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- CN104614939A CN104614939A CN201510015035.7A CN201510015035A CN104614939A CN 104614939 A CN104614939 A CN 104614939A CN 201510015035 A CN201510015035 A CN 201510015035A CN 104614939 A CN104614939 A CN 104614939A
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Abstract
The invention provides a negative photoresist composition for being mixed with glass powder in a GPP process. A stripper comprises the following components in percentage by mass: 15-30 percent of a cyclized rubber xylene solution, 1-5 percent of 2,6-2(4-azidobenzal)-4-methylcyclopentanone, 0.05-5 percent of acrylate isopropylate, and 3-5 percent of an aminopropyl-trimethoxysilane biopolymer. The negative photoresist composition is used for being mixed with the glass powder in the GPP process, and has the characteristics that after mixing, the glass powder can be effectively soluble with the negative photoresist composition, effective focusing can be realized, no subsidence phenomenon is caused within 7 days, the breakdown voltage and the production efficiency of a product are improved effectively, and the market application prospect is very high.
Description
Technical field
the present invention relates to a kind of photoresist, particularly relate to one be applied in use in diode GPP process section mixed
close the high-viscosity photolithographic of glass dust.
Background technology
Electron trade had had new development in recent years, updating as electron trade provides the basis of information-based industry of photoresist itself, and the development of electron trade proposes new requirement to photoresist.Photoetching technique is the gordian technique of microelectric technique development, and photoresist is then the critical material of photoresist.Thermoprene is the crucial fertile material of negative photoresist, its special adhesion property can resistance to live the hydrofluorite of different proportion and the etching of nitric acid system, so can be widely used in microelectronic integrated circuit and semiconductor fabrication process.The photoresist that thermoprene is configured to is owing to having high-adhesiveness, and the features such as high resolving power, high sensitivity, low cost, are widely used in semiconductor diode manufacturing process at present.High-viscosity photolithographic is a kind of special photoresist for ditching fluting in silicon chip and silica substrate during IC semiconductor technology manufactures, and its technique itself requires that trench digging is at more than 150um, and its performance will withstand the corrosion of hydrofluorite and nitric acid.Improving constantly along with diode breakdown voltage at present, traditional manual doctor blade process, its yield, voltage breakdown also cannot meet some special industries as the requirement in the fields such as transformer.Increasing manufacturer starts turn model and selects mesa technology to manufacture diode, namely two road techniques adopt glass dust and photoresist mixing, after coating, oven dry, development, sintered with high temperature, because this high temperature sintering meeting carbonization in sintering furnace of photoresist, can not having an impact to product.Traditional scrapes glass cement technique, its shortcoming be cutting speed slowly, be generally less than 400mil/S, and after wafer glass sintering sintering, flexibility is large, in technique, fragment rate is also difficult to control, and causes its yield lower, generally can not higher than 97%.Its advantage of hybrid glass powder method is that wafer camber degree is little, and cutting speed can improve more than three times, and the life-span of cutter improves five times, and improve breakdown voltage resistant, yield is more than 99% simultaneously.But hybrid glass powder craft is not also popularized at present, and its large-scale application also exists technical matters.Such as: photoresist is colourless in yellow light area, glass dust is white, coats the silicon chip of white after both mixing, so cannot see focusing when exposure machine focusing; For this situation, add special pigment targetedly in this photoresist, its character shows colourless when liquid state, aobvious dark during its solid shape, and aobvious dark photoresist after the coating of yellow light area, accurately can find focusing like this.Secondly the density of photoresist own is 0.9, and glass dust density is about 3.6, after both mix mutually, whether can Homogeneous phase mixing good, whether can produce the problems such as sedimentation because glass dust density is large is also necessarily solve, we attempt adding conventional spreading agent for this reason, but because density variation is large, although temporarily dispersion effect can be played after adding, but maintenance homogeneity that can not be permanent, about 4 as a child will there is sedimentation phenomenon, the special additive propyl trimethoxy silicane dipolymer that the present invention adopts, this adjuvant effectively can increase the wellability of glass dust and photoresist, guarantee that glass dust and photoresist mix molten 7 days mutually simultaneously, sedimentation phenomenon can not be produced.
Summary of the invention
The object of the invention is to solve above-mentioned technical matters, provide one can mix mutually with glass dust, can focus under exposure machine, and after mixing, the negative photoresist of sedimentation phenomenon does not occur.
Object of the present invention is achieved through the following technical solutions:
A kind of for hybrid glass powder negative photo glue composition in GPP technique, it is characterized in that: described negative photoresist composition contains:
A. the xylene solution of thermoprene
B.2,6-bis-(4-phenylazide methylene)-4-methyl-cyclopentanone
C. isopropyl acidic group acrylate
D. propyl trimethoxy silicane dipolymer
Further, above-described one is used for hybrid glass powder negative photo glue composition in GPP technique, and wherein said composition (A) is, the xylene solution of thermoprene, its thermoprene molecular weight is 25 ± 0.5 ten thousand, and its cyclisation rate controls 87 ± 1%.
Further, above-described one is used for hybrid glass powder negative photo glue composition in GPP technique, wherein said composition (B) 2,6-bis-(4-phenylazide methylene)-4-methyl-cyclopentanone
Further, above-described one is used for hybrid glass powder negative photo glue composition in GPP technique, and wherein said composition (C) is isopropyl acidic group acrylate.
Further, above-described one is used for hybrid glass powder negative photo glue composition in GPP technique, and wherein said composition (D) composition is the propyl trimethoxy silicane dipolymer of molecular weight 3000.
Above-described a kind of purposes for hybrid glass powder negative photo glue composition in GPP technique, wherein said negative photo glue composition is used for the application of hybrid glass powder in GPP technique, its characteristic can effectively mix after mixing with glass dust, can focus, there is not sedimentation in 7 days, effectively can improve voltage breakdown and the production efficiency of product.
Embodiment
In negative photoresist of the present invention, the xylene solution of thermoprene, its preferably percent mass hundred within 15 ~ 30%, preferably mass percentage can obtain good viscosity and thickness condition, mass percent, lower than 15% or higher than 30%, is all not suitable for the negative photoresist serving as hybrid glass powder craft.Wherein, its thermoprene molecular weight is 25 ± 0.5 ten thousand, and its cyclisation rate controls 87 ± 1% time, particularly helpful to exposing, developing.
2,6-bis-(4-phenylazide methylene)-4-methyl-cyclopentanone, as the photosensitive material of negative photoresist, its mass percent is within 1 ~ 5%, and its exposure is rear and thermoprene cross-linking effect is better.Cannot play full cross-linked effect lower than massfraction 1%, too slow higher than 5% sensitivity, the time shutter is long, affects production efficiency.
Isopropyl acidic group acrylate, as the additives of pigments of negative photoresist, mass percentage is within 0.05% ~ 5%, and the effect playing adjustable colors is better.Mass percentage lower than 0.05% or higher than 5% all to improve photoresist dry after color do not help, cannot focus.
Propyl trimethoxy silicane dipolymer, its molecular weight is about 3000, and mass percentage, within 3 ~ 5%, has the intermiscibility improving glass dust and photoresist and preferably improves effect, sedimentation can not occur within 7 days.Mass percentage, lower than 3% or higher than 5%, does not improve the two compatibility.
Sample preparation:
1. material: glass dust (PG-200) 300g, photoresist 300g, 7mm zirconia ball 100g, three puts into the enamel grinding pot of 1000ml, is placed on muller, uninterrupted rolling grinding 24 hours.
2. base material: 4 cun of silicon chips of the 45mil after the photoetching of GPP first, its etch depth is at 135um.
Step:
By ground glass dust, rotary coating, on silicon chip, puts into the baking oven of 120 DEG C, toasts 20 minutes, and detect thickness homogeneity with film thickness gauge after taking-up, its error is within 0.1um.With exposure machine focusing, focusing can be found clearly under mask plate.After exposure, automatic processing machine can develop clearly lines, puts into high temperature furnace and sinters, can reach the requirement of 1000 voltages.
One of the present invention is used for hybrid glass powder negative photo glue composition in GPP technique, the object of the invention is to solve above-mentioned technical matters, there is provided one can mix mutually with glass dust, can focus under exposure machine, and miscible after there is not the negative photoresist of sedimentation phenomenon, application prospect is very good.
The present invention still has multiple concrete embodiment, and all employings are equal to replacement or equivalent transformation and all technical schemes of being formed, all drop within the scope of protection of present invention.
Claims (6)
1. for a hybrid glass powder negative photo glue composition in GPP technique, it is characterized in that: the composition of described photoresist and content (mass percent) is,
。
2. according to claim 1 one kind for hybrid glass powder negative photo glue composition in GPP technique, it is characterized in that: described composition (A) is, the xylene solution of thermoprene.
3. according to claim 1 one kind for hybrid glass powder negative photo glue composition in GPP technique, it is characterized in that: described composition (B) composition is 2,6-bis-(4-phenylazide methylene)-4-methyl-cyclopentanone.
4. a kind of for hybrid glass powder negative photo glue composition in GPP technique according to claim 1, it is characterized in that: described composition (C) isopropyl acidic group acrylate.
5. isopropyl acidic group acrylate according to claim 1, is characterized in that: described composition (D) composition is propyl trimethoxy silicane dipolymer.
6. a kind of purposes for hybrid glass powder negative photo glue composition in GPP technique according to claim 1, it is characterized in that: described negative photo glue composition is used for the application of hybrid glass powder in GPP technique, its characteristic can effectively mix after glass dust mixing, can focus, there is not sedimentation, effectively can improve voltage breakdown and the production efficiency of product.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510015035.7A CN104614939A (en) | 2015-01-09 | 2015-01-09 | Negative photoresist composition for being mixed with glass powder in GPP process |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510015035.7A CN104614939A (en) | 2015-01-09 | 2015-01-09 | Negative photoresist composition for being mixed with glass powder in GPP process |
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| CN104614939A true CN104614939A (en) | 2015-05-13 |
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| CN201510015035.7A Pending CN104614939A (en) | 2015-01-09 | 2015-01-09 | Negative photoresist composition for being mixed with glass powder in GPP process |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107561862A (en) * | 2017-09-20 | 2018-01-09 | 苏州瑞红电子化学品有限公司 | Suitable for the negative photoresist of GPP diodes manufacture |
| CN107870513A (en) * | 2017-12-01 | 2018-04-03 | 苏州瑞红电子化学品有限公司 | The compound method of negative photoresist, suspension and the suspension |
| CN114361011A (en) * | 2021-12-15 | 2022-04-15 | 安徽芯旭半导体有限公司 | Photoetching production process of PG (patterned conductor) chip |
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| CN1515962A (en) * | 1995-06-12 | 2004-07-28 | 东丽株式会社 | Sensitive paste-like material, plasma display and mfg. method thereof |
| CN1654534A (en) * | 2004-02-13 | 2005-08-17 | Jsr株式会社 | Method for manufacturing inorganic powder contained resin composition, transfer film and components for display screen |
| CN1941218A (en) * | 2005-09-30 | 2007-04-04 | 三星Sdi株式会社 | A conductive electrode powder, a method for preparing the same, preparing method of electrode of plasma display and plasma display |
| CN101313368A (en) * | 2005-11-30 | 2008-11-26 | 东丽株式会社 | Glass paste, method for producing display by using same, and display |
| CN101371195A (en) * | 2006-01-12 | 2009-02-18 | 东丽株式会社 | Photosensitive composition, display member, and process for producing the same |
| CN102918459A (en) * | 2010-08-27 | 2013-02-06 | 东丽株式会社 | Light-sensitive paste, method for forming pattern, and method for producing flat display panel member |
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2015
- 2015-01-09 CN CN201510015035.7A patent/CN104614939A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1515962A (en) * | 1995-06-12 | 2004-07-28 | 东丽株式会社 | Sensitive paste-like material, plasma display and mfg. method thereof |
| CN1654534A (en) * | 2004-02-13 | 2005-08-17 | Jsr株式会社 | Method for manufacturing inorganic powder contained resin composition, transfer film and components for display screen |
| CN1941218A (en) * | 2005-09-30 | 2007-04-04 | 三星Sdi株式会社 | A conductive electrode powder, a method for preparing the same, preparing method of electrode of plasma display and plasma display |
| CN101313368A (en) * | 2005-11-30 | 2008-11-26 | 东丽株式会社 | Glass paste, method for producing display by using same, and display |
| CN101371195A (en) * | 2006-01-12 | 2009-02-18 | 东丽株式会社 | Photosensitive composition, display member, and process for producing the same |
| CN102918459A (en) * | 2010-08-27 | 2013-02-06 | 东丽株式会社 | Light-sensitive paste, method for forming pattern, and method for producing flat display panel member |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107561862A (en) * | 2017-09-20 | 2018-01-09 | 苏州瑞红电子化学品有限公司 | Suitable for the negative photoresist of GPP diodes manufacture |
| CN107561862B (en) * | 2017-09-20 | 2020-08-07 | 苏州瑞红电子化学品有限公司 | Negative photoresist suitable for GPP diode manufacturing |
| CN107870513A (en) * | 2017-12-01 | 2018-04-03 | 苏州瑞红电子化学品有限公司 | The compound method of negative photoresist, suspension and the suspension |
| CN107870513B (en) * | 2017-12-01 | 2020-12-29 | 苏州瑞红电子化学品有限公司 | Negative photoresist, suspension and preparation method of suspension |
| CN114361011A (en) * | 2021-12-15 | 2022-04-15 | 安徽芯旭半导体有限公司 | Photoetching production process of PG (patterned conductor) chip |
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