CN114335226A - Heterojunction solar cell and manufacturing method thereof - Google Patents

Heterojunction solar cell and manufacturing method thereof Download PDF

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Publication number
CN114335226A
CN114335226A CN202011035116.0A CN202011035116A CN114335226A CN 114335226 A CN114335226 A CN 114335226A CN 202011035116 A CN202011035116 A CN 202011035116A CN 114335226 A CN114335226 A CN 114335226A
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transparent conductive
conductive film
film layer
layer
tco
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张美荣
姚铮
吴华德
张达奇
吴坚
蒋方丹
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Jiaxing Canadian Solar Technology Research Institute
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Jiaxing Canadian Solar Technology Research Institute
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention provides a heterojunction solar cell and a manufacturing method thereof, wherein in the heterojunction solar cell, the carrier concentration of a first transparent conductive film layer on a light receiving surface is lower than that of a second transparent conductive film layer on a backlight surface, and the carrier mobility of the first transparent conductive film is higher than that of the second transparent conductive film layer; based on the structure of the heterojunction solar cell, the first transparent conductive film layer on the light receiving surface side has relatively low carrier doping concentration and relatively high carrier mobility, so that the first transparent conductive film layer has high light transmittance and high conductivity; the second transparent conductive film layer on the backlight surface side has relatively high carrier doping concentration, and high conductivity of the second transparent conductive film layer can be ensured.

Description

Heterojunction solar cell and manufacturing method thereof
Technical Field
The invention relates to the field of photovoltaic manufacturing, in particular to a heterojunction solar cell and a manufacturing method thereof.
Background
The heterojunction solar cell is a relatively high-efficiency crystalline silicon solar cell at present, combines the characteristics of a crystalline silicon cell and a silicon-based thin film cell, and has the advantages of short manufacturing process, low process temperature, high conversion efficiency, more generated energy and the like. The heterojunction solar cell has a small temperature degradation coefficient and double-sided power generation, so that the annual power generation amount can be 15-30% higher than that of a common polycrystalline silicon cell under the condition of the same area, and therefore the heterojunction solar cell has great market potential.
The transparent conductive film layer is used as the outermost layer of the film layer structure of the heterojunction solar cell and is a first barrier for incident light to enter the cell, and for the transparent conductive film layer, excellent electrical transmission needs the film layer to have high conductivity, high doping concentration is needed correspondingly by the high conductivity, and the high doping concentration can cause absorption of infrared light due to plasma oscillation of free carriers, so that the light transmittance of the transparent conductive film layer is influenced. Namely, the electrical conductivity and the light transmittance of the transparent conductive film layer are difficult to be compatible.
In the specific application scene of the heterojunction solar cell, the illumination intensity of the light receiving surface is far greater than that of the back surface. Therefore, in the prior art, the light transmittance problem is mainly considered in the design of the transparent conductive film layer on the light receiving surface of the heterojunction solar cell, and the transparent conductive film layer on the light receiving surface has better light transmittance on the basis of sacrificing the conductivity of the film layer by reducing the doping concentration of the transparent conductive film layer on the light receiving surface; the design of the transparent conductive film layer on the backlight surface of the heterojunction solar cell mainly considers the problem of conductivity, and the transparent conductive film layer on the backlight surface has better conductivity on the basis of sacrificing back surface optics by improving the film layer doping concentration. In addition, the transparent conductive film layer involved in the prior art is generally a single-layer structure.
Based on the design mode of the prior art, the specific implementation parameters of the transparent conductive film layer are further optimized, so that the battery efficiency is difficult to further improve. In view of the above, there is a need to provide an improved solution to the above problems.
Disclosure of Invention
The present invention is designed to solve at least one of the problems of the prior art, and to achieve the above object, the present invention provides a heterojunction solar cell, which is specifically designed as follows.
A heterojunction solar cell comprises a silicon substrate, a first intrinsic amorphous layer, a first doping layer and a first transparent conductive film layer which are sequentially stacked on a light receiving surface of the silicon substrate, and a second intrinsic amorphous layer, a second doping layer and a second transparent conductive film layer which are sequentially stacked on a backlight surface of the silicon substrate and have opposite doping types to those of the first doping layer; the carrier concentration of the first transparent conductive film layer is lower than that of the second transparent conductive film layer, and the carrier mobility of the first transparent conductive film layer is higher than that of the second transparent conductive film layer.
Further, the carrier concentration of the first transparent conductive film layer is 2E20-5E20/cm3The carrier concentration of the second transparent conductive film layer is 3E20-6E20/cm3。
Further, the carrier mobility of the first transparent conductive film layer is 30-60cm2V-1s-1The carrier mobility of the second transparent conductive film layer is 20-50cm2V-1s-1。
Further, the first transparent conductive film layer comprises a first TCO film and a second TCO film arranged on one surface of the first TCO film, the carrier concentration of the second TCO film is larger than that of the first TCO film, and the thickness of the second TCO film is smaller than that of the first TCO film.
Further, the first transparent conductive film layer further comprises a third TCO film arranged on the other surface of the first TCO film, the carrier concentration of the third TCO film is larger than that of the first TCO film, and the thickness of the third TCO film is smaller than that of the first TCO film.
Further, the second transparent conductive film layer comprises a fourth TCO film and a fifth TCO film arranged on one surface of the fourth TCO film, the carrier concentration of the fifth TCO film is greater than that of the fourth TCO film, and the thickness of the fifth TCO film is smaller than that of the fourth TCO film.
Further, the second transparent conductive film layer further comprises a sixth TCO film arranged on the other surface of the fourth TCO film, the carrier concentration of the sixth TCO film is greater than that of the fourth TCO film, and the thickness of the sixth TCO film is smaller than that of the fourth TCO film.
The invention also provides a manufacturing method of the heterojunction solar cell, which comprises the following steps:
depositing a first intrinsic amorphous layer and a first doping layer on one side of the light receiving surface of the silicon substrate in sequence;
depositing a second intrinsic amorphous layer and a second doping layer with the doping type opposite to that of the first doping layer on the backlight surface of the silicon substrate in sequence;
depositing a first transparent conductive film layer and a second transparent conductive film layer on the surfaces of the first doping layer and the second doping layer respectively, and controlling the carrier concentration of the first transparent conductive film layer to be lower than that of the second transparent conductive film layer, wherein the carrier mobility of the first transparent conductive film layer is higher than that of the second transparent conductive film layer.
Further, the target power density of the first transparent conductive film layer is greater than the target power density of the second transparent conductive film layer.
Further, the power density of the target material for depositing the first transparent conductive film layer is 1-2W/cm2The power density of the target material for depositing the second transparent conductive film layer is 0.8-1.8W/cm2。
Further, the deposition atmosphere of the first transparent conductive film layer and the deposition atmosphere of the second transparent conductive film layer both comprise argon and oxygen, and the oxygen flow ratio in the deposition atmosphere of the first transparent conductive film layer is greater than the oxygen flow ratio in the deposition atmosphere of the second transparent conductive film layer.
Further, the oxygen flow ratio in the first transparent conductive film layer deposition atmosphere is 1-2.5, and the oxygen flow ratio in the second transparent conductive film layer deposition atmosphere is 0.5-2.
Further, the content of the dopant in the target material for depositing the first transparent conductive film layer is less than the content of the dopant in the target material for depositing the second transparent conductive film layer.
Further, the dopant content in the target material for depositing the first transparent conductive film layer 41 is 0.5 wt% to 5 wt%, and the dopant content in the target material for depositing the second transparent conductive film layer 41 is 5 wt% to 25 wt%.
Further, the target material is SnO2、Al2O3、Ga2O3、WO3、TiO2、ZrO2、MoO2Or H2O doped In2O 3.
The invention has the beneficial effects that: based on the structure of the heterojunction solar cell, the first transparent conductive film layer on the light receiving surface side has relatively low carrier doping concentration and relatively high carrier mobility, so that the first transparent conductive film layer has high light transmittance and high conductivity; the second transparent conductive film layer on the backlight surface side has relatively high carrier doping concentration, and high conductivity of the second transparent conductive film layer can be ensured, so that the comprehensive performance of the heterojunction solar cell can be effectively improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts. The front and back sides referred to herein are only defined with respect to the positional relationship in the drawings of the embodiments, that is, the front side corresponds to the upper surface of the drawings, and the back side corresponds to the lower surface of the drawings.
FIG. 1 is a schematic diagram of a first embodiment of a heterojunction solar cell of the invention;
FIG. 2 is a schematic diagram of a second embodiment of a heterojunction solar cell of the invention;
FIG. 3 is a schematic diagram of a third embodiment of a heterojunction solar cell of the invention;
FIG. 4 is a schematic diagram of a fourth embodiment of a heterojunction solar cell of the invention;
FIG. 5 is a schematic diagram of a fifth embodiment of a heterojunction solar cell of the invention;
FIG. 6 is a schematic diagram of a sixth embodiment of a heterojunction solar cell of the invention;
FIG. 7 is a schematic diagram of a seventh embodiment of a heterojunction solar cell of the invention;
FIG. 8 is a schematic view of an eighth embodiment of the heterojunction solar cell of the invention;
in the figure, 10 is a silicon substrate, 21 is a first intrinsic amorphous layer, 31 is a first doped layer, 41 is a first transparent conductive film layer, 410 is a first TCO film, 411 is a second TCO film, 412 is a third TCO film, 51 is a first collector, 22 is a second intrinsic amorphous layer, 32 is a second doped layer, 42 is a second transparent conductive film layer, 420 is a fourth TCO film, 421 is a fifth TCO film, 422 is a sixth TCO film, and 52 is a second collector.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, the heterojunction solar cell according to the present invention comprises: the silicon substrate 10 includes a first intrinsic amorphous layer 21, a first doping layer 31, and a first transparent conductive film layer 41 sequentially stacked on a light receiving surface of the silicon substrate 10, and a second intrinsic amorphous layer 22, a second doping layer 32, and a second transparent conductive film layer 42 sequentially stacked on a back surface of the silicon substrate 10.
In the implementation, the silicon substrate 10 is usually a single crystal silicon substrate, and the light receiving surface is the surface of the heterojunction solar cell directly receiving the sunlight, and the back surface is the surface of the heterojunction solar cell not directly receiving the sunlight, i.e. the surface opposite to the light receiving surface. The first and second intrinsic amorphous layers 21 and 22 are intrinsic amorphous silicon. The first doped layer 31 and the second doped layer 32 are usually doped amorphous silicon, and the doping types of the two layers are opposite, wherein one of the two layers is doped N-type, that is, doped with phosphorus; the other is P-type doping, namely boron doping is adopted.
In the present invention, although the silicon substrate 10 may specifically be a P-type silicon substrate, an N-type single crystal substrate silicon may also be selected; however, in a preferred embodiment of the present invention, the silicon substrate 10 is an N-type silicon substrate. Further preferably, the first doped layer 31 is N-type doped amorphous silicon, and the second doped layer 32 is P-type doped amorphous silicon.
As further shown in fig. 1, the heterojunction solar cell according to the present invention further includes a first collector electrode 51 disposed on the surface of the first transparent conductive film layer 41 and a second collector electrode 52 disposed on the surface of the second transparent conductive film layer 42.
In the present invention, the carrier concentration of the first transparent conductive film layer 41 is lower than that of the second transparent conductive film layer 42, and the carrier mobility of the first transparent conductive film 41 is higher than that of the second transparent conductive film layer 42.
According to the invention, based on the design mode of the first transparent conductive film layer 41 and the second transparent conductive film layer 42, the comprehensive performance of the heterojunction solar cell can be effectively improved.
Among them, the light receiving surface side first transparent conductive film layer 41 has a relatively low carrier doping concentration and a relatively high carrier mobility, so that the first transparent conductive film layer has a high light transmittance and a high conductivity. Specifically, the relatively low carrier doping concentration can reduce the absorption of the first transparent conductive film layer 41 to infrared light due to the plasma oscillation of free carriers, so that the first transparent conductive film layer 41 can efficiently transmit light, and the heterojunction battery can be ensured to have good short-circuit current; as for the conductivity of the first transparent conductive film 41, the conductivity is limited by two parameters, namely the carrier concentration and the carrier mobility, and when the carrier concentration is limited, the carrier mobility is improved, and the first transparent conductive film 41 can also be effectively ensured to have better conductivity.
As for the second transparent conductive film layer 42 on the backlight surface side, since it has a relatively high carrier doping concentration, high conductivity of the second transparent conductive film layer 42 can be ensured.
In some embodiments, the carrier concentration of the first transparent conductive film layer 41 is 2E20-5E20/cm3The carrier concentration of the second transparent conductive film layer 42 is 3E20-6E20/cm3. For example, the carrier concentration of the first transparent conductive film layer 41 is specifically 3.5E20/cm3The carrier concentration of the second transparent conductive film layer 42 is 5.5E20/cm3
Further, the carrier mobility of the first transparent conductive film layer 41 is 30-60cm2V-1s-1The carrier mobility of the second transparent conductive film layer 42 is 20-50cm2V-1s-1. For example, the first transparent conductive film layer 41 has a carrier mobility of 50cm2V-1s-1The carrier mobility of the second transparent conductive film layer 42 is 35cm2V-1s-1。
The first transparent conductive film layer 41 and the second transparent conductive film layer 42 according to a further preferred embodiment of the present invention are not limited to a single-layer structure, and the structures described with reference to fig. 2 to 8 may be specifically used.
Referring to fig. 2, the first transparent conductive film 41 includes a first TCO film 410 and a second TCO film 411, wherein the second TCO film 411 is disposed on a side surface of the first TCO film 410 facing the silicon substrate 10 and directly contacts the first doping layer 31. In this embodiment, the carrier concentration of the second TCO film 411 is greater than that of the first TCO film 410, and the thickness of the second TCO film 411 is less than that of the first TCO film 410.
In the embodiment shown in fig. 2, since the carrier concentration of the second TCO film 411 is higher, the contact resistance between the first transparent conductive film layer 41 and the first doping layer 31 can be reduced, thereby increasing the fill factor of the heterojunction solar cell; the thickness of the second TCO film 411 is relatively thin, so that the problem of poor light transmittance of the first transparent conductive film 41 due to high carrier concentration can be greatly reduced. The first TCO film 410 has a good light transmittance due to a low carrier concentration, and when the first transparent conductive film 41 has a sufficient thickness, the first TCO film 410 can also ensure an excellent light transmittance by setting the first TCO film to a relatively thick thickness, so that the heterojunction solar cell has a high short-circuit current.
In the specific implementation of the embodiment shown in FIG. 2, the first TCO film 410 has a thickness of 40-90nm and the second TCO film 411 has a thickness of 5-30 nm.
Preferably, the carrier concentration of the second TCO film 411 is 2.5E20-5.5E20/cm3The first TCO film 410 has a carrier concentration of 1.5E20-4.5E20/cm3. It is understood that the overall carrier concentration of the first transparent conductive film layer 41 is determined by the first TCO film 410 and the second TCO film 411, and thus, the lower limit of the carrier concentration of the first TCO film 411 (i.e. 1.5E 20/cm)3) May be somewhat smaller than the lower limit of the carrier concentration of the first transparent conductive film layer 41 (i.e., 2E 20/cm)3) And the upper limit of the carrier concentration of the second TCO film 411 (i.e., 5.5E 20/cm)3) May be somewhat larger than the upper limit of the carrier concentration of the first transparent conductive film layer 41 (i.e., 5E 20/cm)3)。
In another embodiment of the invention, referring to fig. 3, when the first transparent conductive film layer 41 includes the first TCO film 410 and the second TCO film 411, the second TCO film 411 may also be disposed on a side surface of the first TCO film 410 away from the silicon substrate 10, and directly contacts the first collector 51, so as to reduce the contact resistance between the first transparent conductive film layer 41 and the first collector 51. Further advantages of the embodiment shown in fig. 3 in more detail can be found in the description of the embodiment shown in fig. 2.
As a further preferred implementation structure of the first transparent conductive film layer 41, referring to fig. 4, in this embodiment, the first transparent conductive film layer 41 includes, in addition to the first TCO film 410 and the second TCO film 411, a third TCO film 412 disposed on the other surface of the first TCO film 410.
The third TCO film 412 may be disposed in a manner similar to that of the second TCO film 411, that is, the carrier concentration of the third TCO film 412 is greater than that of the first TCO film 410, and the thickness of the third TCO film 412 is less than that of the first TCO film 410.
The two side surfaces of the first transparent conductive film layer 41 are respectively provided with the second TCO film 411 and the third TCO film 412 with relatively large carrier concentration. The first transparent conductive film layer 41 and the first doping layers 31 on both sides and the first collector electrode 51 have relatively small contact resistance, so that the first transparent conductive film layer 41 on the light receiving surface side of the silicon substrate 10 has the optimal overall performance.
In specific implementation, the thickness and the carrier concentration of the third TCO film 412 can be designed accordingly with reference to the second TCO film 411. That is, the thickness of the third TCO film 412 is 5 to 30 nm; the carrier concentration of the third TCO film 412 is 2.5E20-5.5E20/cm3。
Referring to fig. 5, in other embodiments of the invention, the second transparent conductive film layer 42 includes a fourth TCO film 420 and a fifth TCO film 421, wherein the fifth TCO film 421 is disposed on a side surface of the fourth TCO film 420 facing the silicon substrate 10 and directly contacts the second doped layer 32. In this embodiment, the carrier concentration of the fifth TCO film 421 is greater than the carrier concentration of the fourth TCO film 420, and the thickness of the fifth TCO film 421 is less than the thickness of the fourth TCO film 420.
In the embodiment shown in fig. 5, since the carrier concentration of the fifth TCO film 421 is higher, the contact resistance between the second transparent conductive film layer 42 and the second doping layer 32 can be reduced, thereby increasing the fill factor of the heterojunction solar cell; the fifth TCO film 421 is relatively thin, so that the problem of poor light transmittance of the second transparent conductive film layer 42 due to high carrier concentration can be greatly reduced. The fourth TCO film 420 has a relatively high light transmittance due to a relatively low carrier concentration, and when the second transparent conductive film 42 has a relatively high thickness, the fourth TCO film can also ensure an excellent light transmittance, so that the heterojunction solar cell has a relatively high short-circuit current.
In a specific implementation of the embodiment shown in FIG. 5, the thickness of the fourth TCO film 420 is 40-90nm and the thickness of the fifth TCO film 421 is 5-30 nm.
Preferably, the carrier concentration of the fifth TCO film 421 is 3.5E20-6.5E20/cm3The carrier concentration of the fourth TCO film 420 is 2.5E20-5.5E20/cm3。
In another embodiment of the invention, referring to fig. 6, when the second transparent conductive film layer 42 includes the fourth TCO film 420 and the fifth TCO film 421, the fifth TCO film 421 may also be disposed on a side surface of the fourth TCO film 420 facing away from the silicon substrate 10, and directly contacts the second collector 52, so as to reduce the contact resistance between the second transparent conductive film layer 42 and the second collector 52. Further advantages of the embodiment shown in fig. 6 in more detail can be found in reference to the description of the embodiment shown in fig. 5.
As a further preferred implementation structure of the second transparent conductive film layer 42, referring to fig. 7, in this embodiment, the second transparent conductive film layer 42 includes, in addition to the fourth TCO film 420 and the fifth TCO film 421, a sixth TCO film 422 disposed on the other surface of the fourth TCO film 420.
The arrangement of the sixth TCO film 422 may refer to the arrangement of the fifth TCO film 421, that is, the carrier concentration of the sixth TCO film 422 is greater than that of the fourth TCO film 420, and the thickness of the sixth TCO film 422 is less than that of the fourth TCO film 420.
The fifth TCO film 421 and the sixth TCO film 422 with relatively large carrier concentration are respectively disposed on the two side surfaces of the second transparent conductive film layer 42. The second transparent conductive film layer 42 and the second doping layers 32 and the second collector 52 on both sides have relatively small contact resistance, so that the second transparent conductive film layer 42 on the light receiving surface side of the silicon substrate 10 has the optimal overall performance.
In specific implementation, the thickness and the carrier concentration of the sixth TCO film 422 can be designed accordingly with reference to the fifth TCO film 421. That is, the thickness of the sixth TCO film 422 is 5 to 30 nm; the carrier concentration of the sixth TCO film 422 is 3.5E20-6.5E20/cm3。
As a preferred embodiment of the present invention, the first transparent conductive film layer 41 and the second transparent conductive film layer 42 both adopt at least two-layer design, and a specific implementation structure is shown in fig. 8, in this embodiment, the first transparent conductive film layer 41 and the second transparent conductive film layer 42 both adopt a three-layer film structure, it can be understood that in other implementation structures not shown in the present invention, one or both of the first transparent conductive film layer 41 and the second transparent conductive film layer 42 may also adopt a two-layer design structure.
The invention also provides a manufacturing method of the heterojunction solar cell, which comprises the following steps:
depositing a first intrinsic amorphous layer 21 and a first doped layer 31 on one side of the light receiving surface of the silicon substrate 10 in sequence;
depositing a second intrinsic amorphous layer 22 and a second doped layer 32 with the doping type opposite to that of the first doped layer 31 on the backlight surface of the silicon substrate 10 in sequence;
depositing a first transparent conductive film 41 and a second transparent conductive film 42 on the surfaces of the first doped layer 31 and the second doped layer 32, respectively, and controlling the carrier concentration of the first transparent conductive film 41 to be lower than that of the second transparent conductive film 42, wherein the carrier mobility of the first transparent conductive film 41 is higher than that of the second transparent conductive film 42.
In order to realize the carrier mobility of the first transparent conductive film layer 41 higher than that of the second transparent conductive film layer 42, in the present invention, the target power density for depositing the first transparent conductive film layer 41 is higher than that for depositing the second transparent conductive film layer 42. Typically, the first transparent conductive film layer 41 and the second transparent conductive film layer 42 are deposited by PVD deposition, RPD deposition or magnetron sputtering deposition. Experiments prove that when the transparent conductive film layer of the heterojunction solar cell is manufactured, if the target power density during deposition is enhanced, the carrier mobility of the corresponding transparent conductive film layer can be improved, and the carrier concentration is not greatly influenced.
In specific implementation, the power density of the target material for depositing the first transparent conductive film layer 41 is 1-2W/cm2The power density of the target material for depositing the second transparent conductive film layer 42 is 0.8-1.8W/cm2。
In the present invention, the deposition atmosphere of the first transparent conductive film 41 and the second transparent conductive film 42 both include argon and oxygen. In order to further optimize the carrier mobility and the light transmittance of the first transparent conductive film layer 41, in specific implementation, the oxygen flow rate ratio in the atmosphere in which the first transparent conductive film layer 41 is deposited is greater than the oxygen flow rate ratio in the atmosphere in which the second transparent conductive film layer 42 is deposited.
It can be understood that the oxygen flow ratio in the deposition atmosphere refers to a ratio of the oxygen flow to the total flow of the argon and the oxygen, and the oxygen flow ratio in the deposition atmosphere of the first transparent conductive film layer 41 is relatively large, so that the grain size of the first transparent conductive film layer 41 can be correspondingly increased, and further, the carrier mobility and the light transmittance are improved.
Specifically, the oxygen flow ratio in the deposition atmosphere of the first transparent conductive film layer 41 is 1 to 2.5, and the oxygen flow ratio in the deposition atmosphere of the second transparent conductive film layer is 0.5 to 2.
In order to make the carrier concentration of the first transparent conductive film layer 41 lower than that of the second transparent conductive film layer 42, in the present invention, the dopant content in the target material for depositing the first transparent conductive film layer 41 is smaller than that in the target material for depositing the second transparent conductive film layer 42.
Preferably, the ratio of the dopant content in the target material for depositing the second transparent conductive film layer 42 to the dopant content in the target material for depositing the first transparent conductive film layer 41 is not greater than 10.
In the specific implementation, the dopant content in the target material for depositing the first transparent conductive film layer 41 is 0.5 wt% -5 wt%, and the dopant content in the target material for depositing the second transparent conductive film layer 41 is 5 wt% -25 wt%
Typically, the target material is SnO2、Al2O3、Ga2O3、WO3、TiO2、ZrO2、MoO2Or H2O-doped In2O3I.e. the dopant is SnO2、Al2O3、Ga2O3、WO3、TiO2、ZrO2、MoO2Or H2O。
It should be understood that when the first transparent conductive film layer 41 and the second transparent conductive film layer 42 involved in the present invention have more than a single-layer structure, the dopant content of the target material for depositing each layer is different. When the carrier concentration in the film layer is higher, the content of the dopant in the target material when the corresponding film layer is deposited has a relatively larger value.
It should be understood that although the present description refers to embodiments, not every embodiment contains only a single technical solution, and such description is for clarity only, and those skilled in the art should make the description as a whole, and the technical solutions in the embodiments can also be combined appropriately to form other embodiments understood by those skilled in the art.
The above-listed detailed description is only a specific description of a possible embodiment of the present invention, and they are not intended to limit the scope of the present invention, and equivalent embodiments or modifications made without departing from the technical spirit of the present invention should be included in the scope of the present invention.

Claims (15)

1. A heterojunction solar cell comprises a silicon substrate, a first intrinsic amorphous layer, a first doping layer and a first transparent conductive film layer which are sequentially stacked on a light receiving surface of the silicon substrate, and a second intrinsic amorphous layer, a second doping layer and a second transparent conductive film layer which are sequentially stacked on a backlight surface of the silicon substrate and have opposite doping types to those of the first doping layer; the carrier concentration of the first transparent conductive film layer is lower than that of the second transparent conductive film layer, and the carrier mobility of the first transparent conductive film layer is higher than that of the second transparent conductive film layer.
2. The heterojunction solar cell of claim 1, wherein the carrier concentration of the first transparent conductive film layer is 2E20-5E20/cm3The carrier concentration of the second transparent conductive film layer is 3E20-6E20/cm3。
3. The heterojunction solar cell of claim 1, wherein the first transparent conductive film layer has a carrier mobility of 30-60cm2V-1s-1The carrier mobility of the second transparent conductive film layer is 20-50cm2V-1s-1。
4. The heterojunction solar cell of any of claims 1 to 3, wherein the first transparent conductive film layer comprises a first TCO film and a second TCO film disposed on a surface of the first TCO film, wherein the carrier concentration of the second TCO film is greater than the carrier concentration of the first TCO film, and the thickness of the second TCO film is less than the thickness of the first TCO film.
5. The heterojunction solar cell of claim 4, wherein the first transparent conductive film layer further comprises a third TCO film disposed on another surface of the first TCO film, wherein the carrier concentration of the third TCO film is greater than the carrier concentration of the first TCO film, and the thickness of the third TCO film is less than the thickness of the first TCO film.
6. The heterojunction solar cell of any of claims 1-3, wherein the second transparent conductive film layer comprises a fourth TCO film and a fifth TCO film disposed on a surface of the fourth TCO film, wherein the carrier concentration of the fifth TCO film is greater than the carrier concentration of the fourth TCO film, and the thickness of the fifth TCO film is less than the thickness of the fourth TCO film.
7. The heterojunction solar cell of claim 6, wherein the second transparent conductive film layer further comprises a sixth TCO film disposed on another surface of the fourth TCO film, wherein the carrier concentration of the sixth TCO film is greater than the carrier concentration of the fourth TCO film, and the thickness of the sixth TCO film is less than the thickness of the fourth TCO film.
8. A method for manufacturing a heterojunction solar cell is characterized by comprising the following steps:
depositing a first intrinsic amorphous layer and a first doping layer on one side of the light receiving surface of the silicon substrate in sequence;
depositing a second intrinsic amorphous layer and a second doping layer with the doping type opposite to that of the first doping layer on the backlight surface of the silicon substrate in sequence;
depositing a first transparent conductive film layer and a second transparent conductive film layer on the surfaces of the first doping layer and the second doping layer respectively, and controlling the carrier concentration of the first transparent conductive film layer to be lower than that of the second transparent conductive film layer, wherein the carrier mobility of the first transparent conductive film layer is higher than that of the second transparent conductive film layer.
9. The method of claim 8, wherein a target power density of the first transparent conductive film layer is greater than a target power density of the second transparent conductive film layer.
10. The method of claim 9, wherein the first transparent conductive film layer is deposited with a target power density of 1-2W/cm2The power density of the target material for depositing the second transparent conductive film layer is 0.8-1.8W/cm2。
11. The method of claim 9, wherein the deposition atmosphere of the first transparent conductive film layer and the second transparent conductive film layer comprises argon and oxygen, and the oxygen flow ratio in the deposition atmosphere of the first transparent conductive film layer is greater than the oxygen flow ratio in the deposition atmosphere of the second transparent conductive film layer.
12. The method of fabricating a heterojunction solar cell of claim 11, wherein the flow ratio of oxygen in the atmosphere of the first transparent conductive film layer deposition is 1-2.5, and the flow ratio of oxygen in the atmosphere of the second transparent conductive film layer deposition is 0.5-2.
13. The method of any of claims 9-12, wherein the dopant content of the target material used to deposit the first transparent conductive film layer is less than the dopant content of the target material used to deposit the second transparent conductive film layer.
14. The method of manufacturing a heterojunction solar cell of claim 13, wherein the dopant content in the target material for depositing the first transparent conductive film layer 41 is 0.5 wt% to 5 wt%, and the dopant content in the target material for depositing the second transparent conductive film layer 41 is 5 wt% to 25 wt%.
15. The method of claim 13 wherein the target material is SnO2、Al2O3、Ga2O3、WO3、TiO2、ZrO2、MoO2Or H2O-doped In2O3。
CN202011035116.0A 2020-09-27 2020-09-27 Heterojunction solar cell and manufacturing method thereof Pending CN114335226A (en)

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