CN113782623A - Interdigital back contact thin film solar cell, cell module and photovoltaic system - Google Patents
Interdigital back contact thin film solar cell, cell module and photovoltaic system Download PDFInfo
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- CN113782623A CN113782623A CN202111175128.8A CN202111175128A CN113782623A CN 113782623 A CN113782623 A CN 113782623A CN 202111175128 A CN202111175128 A CN 202111175128A CN 113782623 A CN113782623 A CN 113782623A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/022458—Electrode arrangements specially adapted for back-contact solar cells for emitter wrap-through [EWT] type solar cells, e.g. interdigitated emitter-base back-contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The application is suitable for the technical field of solar cells, and provides an interdigital back contact thin-film solar cell, a cell module and a photovoltaic system. The interdigital back contact thin-film solar cell comprises a glass substrate, an absorption layer and an interdigital conducting layer which are sequentially stacked, wherein the interdigital conducting layer comprises a first conducting layer and a second conducting layer which are alternately arranged in the horizontal direction, an electron transmission layer is arranged between the first conducting layer and the absorption layer, and/or a hole transmission layer is arranged between the second conducting layer and the absorption layer. Therefore, the electrode can be prevented from shielding sunlight which is emitted to the interdigital back contact thin film solar cell. Moreover, a transparent conductive film which can cause parasitic absorption does not need to be deposited on the glass substrate, so that the parasitic absorption can be reduced. Thus, the short-circuit current density can be increased, which is beneficial to improving the photoelectric conversion efficiency.
Description
Technical Field
The application belongs to the technical field of solar cells, and particularly relates to an interdigital back contact thin-film solar cell, a cell module and a photovoltaic system.
Background
The related art generally adopts a double-sided electrode contact mode to prepare the thin film solar cell. One of the electrodes is a metal electrode and is positioned on the non-light-receiving surface of the thin-film solar cell. The other electrode is a transparent conductive film electrode and is positioned on the light receiving surface of the thin film solar cell. However, there is a problem of parasitic absorption in the thin film solar cell, resulting in a decrease in current. Therefore, how to weaken the parasitic absorption of the thin film solar cell becomes a problem to be solved urgently.
Disclosure of Invention
The application provides an interdigital back contact thin-film solar cell, a cell module and a photovoltaic system, and aims to solve the problem of weakening parasitic absorption of the thin-film solar cell.
In a first aspect, the interdigital back contact thin-film solar cell provided by the application comprises a glass substrate, an absorption layer and an interdigital conductive layer which are sequentially stacked, wherein the interdigital conductive layer comprises a first conductive layer and a second conductive layer which are alternately arranged in the horizontal direction, and an electron transmission layer is arranged between the first conductive layer and the absorption layer; and/or a hole transport layer is arranged between the second conductive layer and the absorption layer.
The absorption layer comprises at least one of ferrous silicon, copper indium gallium selenide, microcrystalline silicon, nanocrystalline silicon, indium phosphide, amorphous silicon, perovskite, gallium arsenide and cadmium telluride.
Optionally, the first conductive layer comprises a first transparent conductive layer and/or a first metal electrode.
Optionally, the second conductive layer comprises a second transparent conductive layer and/or a second metal electrode.
Optionally, the first conductive layer is separated from the second conductive layer by a physical structure.
Optionally, the physical structure comprises a trench.
Optionally, the electron transport layer is separated from the hole transport layer by a physical structure.
Optionally, the physical structure comprises a trench.
In a second aspect, the present application provides a cell module comprising an interdigitated back contact thin film solar cell as described in any one of the above.
In a third aspect, the present application provides a photovoltaic system including the above-described cell assembly.
According to the interdigital back contact thin-film solar cell, the cell module and the photovoltaic system, the interdigital conducting layer is located on one side, away from the glass substrate, of the absorption layer, the glass substrate faces the incident direction of sunlight generally, and therefore the interdigital conducting layer is located on one side, away from the incident direction of the sunlight, of the glass substrate, and therefore the situation that the electrodes shield the sunlight which is emitted to the interdigital back contact thin-film solar cell can be avoided. Moreover, a transparent conductive film which can cause parasitic absorption does not need to be deposited on the glass substrate, so that the parasitic absorption can be reduced. Thus, the short-circuit current density can be increased, which is beneficial to improving the photoelectric conversion efficiency.
Drawings
Fig. 1 is a schematic structural diagram of an interdigitated back contact thin film solar cell according to an embodiment of the present application;
fig. 2 is a schematic structural diagram of an interdigital back contact thin film solar cell in an embodiment of the present application;
fig. 3 is a schematic structural diagram of an interdigitated back contact thin film solar cell according to an embodiment of the present application;
fig. 4 is a schematic structural diagram of an interdigitated back contact thin film solar cell according to an embodiment of the present application;
fig. 5 is a schematic structural diagram of an interdigitated back contact thin film solar cell according to an embodiment of the present application;
fig. 6 is a schematic structural diagram of an interdigitated back contact thin film solar cell according to an embodiment of the present application;
fig. 7 is a schematic structural diagram of an interdigitated back contact thin film solar cell in an embodiment of the present application;
fig. 8 is a schematic structural diagram of an interdigitated back contact thin film solar cell in an embodiment of the present application;
fig. 9 is a schematic structural diagram of an interdigital back contact thin film solar cell in an embodiment of the present application.
Description of the main element symbols:
the solar cell comprises an interdigital back contact thin film solar cell 30, a glass substrate 31, an absorption layer 32, an interdigital conductive layer 33, a first conductive layer 331, a first transparent conductive layer 3311, a first metal electrode 3312, a second conductive layer 332, a second transparent conductive layer 3321, a second metal electrode 3322, an electron transport layer 341, and a hole transport layer 342.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
Referring to fig. 1, an interdigital back-contact thin-film solar cell 30 according to an embodiment of the present application includes a glass substrate 31, an absorption layer 32, and an interdigital conductive layer 33, which are sequentially stacked, the interdigital conductive layer 33 includes a first conductive layer 331 and a second conductive layer 332 alternately arranged in a horizontal direction; an electron transport layer 341 is provided between the first conductive layer 331 and the absorption layer 32, and/or a hole transport layer 342 is provided between the second conductive layer 332 and the absorption layer 32.
In the interdigital back-contact thin-film solar cell 30 of the embodiment of the present application, since the interdigital conductive layer 33 is located on the side of the absorption layer 32 away from the glass substrate 31, and the glass substrate 31 generally faces the incident direction of sunlight, the interdigital conductive layer 33 is located on the side of the glass substrate 31 away from the incident direction of sunlight, so that the electrode can be prevented from shielding the sunlight which is emitted to the interdigital back-contact thin-film solar cell 30. Moreover, the parasitic absorption can be reduced without depositing a transparent conductive film on the glass substrate 31, which would cause parasitic absorption. Thus, the short-circuit current density can be increased, which is beneficial to improving the photoelectric conversion efficiency.
Specifically, the horizontal direction refers to a direction perpendicular to the thickness of the interdigitated back contact thin film solar cells 30.
Specifically, the first conductive layers 331 and the second conductive layers 332 are alternately arranged, which means that one second conductive layer 332 is arranged between two adjacent first conductive layers 331, and one first conductive layer 331 is arranged between two adjacent second conductive layers 332.
Specifically, the polarity of the first conductive layer 331 and the second conductive layer 332 in the interdigital conductive layer 33 is different. In the drawings, conductive layers of different polarities are shown with different hatching.
Specifically, in the example of fig. 2, an electron transport layer 341 is provided between the first conductive layer 331 and the absorption layer 32, and a hole transport layer 342 is not provided between the second conductive layer 332 and the absorption layer 32; in the examples of fig. 3,4, and 5, an electron transport layer 341 is provided between the first conductive layer 331 and the absorption layer 32, and a hole transport layer 342 is provided between the second conductive layer 332 and the absorption layer 32; it is understood that in other examples, the electron transport layer 341 is not disposed between the first conductive layer 331 and the absorption layer 32, and the hole transport layer 342 is disposed between the second conductive layer 332 and the absorption layer 32.
It is understood that the electron transport layer 341 refers to a film layer capable of transporting electron carriers. Because the electron transport layer 341 is disposed between the first conductive layer 331 and the absorption layer 32, electrons excited by sunlight can be timely transported through the electron transport layer 341 and the first conductive layer 331, and the influence of the accumulation of electrons on the service life of the interdigital back contact thin-film solar cell 30 is avoided. Moreover, holes can be blocked, and the recombination of the holes and electrons can be reduced.
In the example of fig. 2, the electron transport layer 341 is cadmium sulfide (CdS); in the example of FIG. 3, electron transport layer 341 is an n-type amorphous silicon layer (n a-Si: H); in the example of fig. 4, the electron transport layer 341 is cadmium sulfide (CdS); in the example of fig. 5, ETL refers to the electron transport layer 341.
It is understood that the hole transport layer 342 refers to a film layer capable of transporting hole carriers. Due to the fact that the hole transport layer 342 is arranged between the second conductive layer 332 and the absorption layer 32, holes excited by sunlight can be timely transported through the hole transport layer 342, and the phenomenon that the service life of the interdigital back contact thin-film solar cell 30 is affected by accumulation of the holes is avoided. Moreover, electrons can be blocked, and the recombination of holes and electrons can be reduced.
In the example of FIG. 3, hole transport layer 342 is a P-type amorphous silicon layer (P a-Si: H); in the example of fig. 4, the hole transport layer 342 is zinc telluride (ZnTe); in the example of fig. 5, the HTL refers to the hole transport layer 342.
Optionally, the absorber layer 32 includes at least one of silicon ferrous (β -FeSi2), Copper Indium Gallium Selenide (CIGS), microcrystalline silicon, nanocrystalline silicon, indium phosphide, amorphous silicon, perovskite (perovskite), gallium arsenide, and cadmium telluride (CdTe). In this way, various forms of the absorbent layer 32 are provided, which can be selected during the production process according to the actual situation.
Specifically, the absorber layer 32 may include 1, 2, 3,4, 5, 6, 7, 8, or all of silicon ferrous, copper indium gallium selenide, microcrystalline, nanocrystalline silicon, indium phosphide, amorphous silicon, perovskite, gallium arsenide, and cadmium telluride.
For example, the absorber layer 32 includes silicon ferrous oxide; as another example, absorber layer 32 includes silicon ferrous oxide and copper indium gallium selenide; for another example, the absorption layer 32 includes silicon ferrous oxide, copper indium gallium selenide, and microcrystalline silicon; for example, the absorption layer 32 includes silicon ferrous, copper indium gallium selenide, microcrystalline silicon, nanocrystalline silicon; for another example, the absorption layer 32 includes silicon ferrous oxide, copper indium gallium selenide, microcrystalline silicon, nanocrystalline silicon, and indium phosphide; for another example, the absorption layer 32 includes silicon ferrous oxide, copper indium gallium selenide, microcrystalline silicon, nanocrystalline silicon, indium phosphide, amorphous silicon; for example, the absorption layer 32 includes silicon ferrous, copper indium gallium selenide, microcrystalline silicon, nanocrystalline silicon, indium phosphide, amorphous silicon, perovskite; for another example, the absorption layer 32 includes silicon ferrous, copper indium gallium selenide, microcrystalline silicon, nanocrystalline silicon, indium phosphide, amorphous silicon, perovskite, gallium arsenide; for another example, the absorber layer 32 may include silicon ferrous, copper indium gallium selenide, microcrystalline silicon, nanocrystalline silicon, indium phosphide, amorphous silicon, perovskite, gallium arsenide, or cadmium telluride.
In the example of fig. 2, the absorber layer 32 is Copper Indium Gallium Selenide (CIGS); in the example of FIG. 3, the absorber layer 32 is intrinsic amorphous silicon (i a-Si: H); in the example of fig. 4, the absorber layer 32 is cadmium telluride (CdTe); in the example of fig. 5, the absorber layer 32 is a perovskite (perovskite).
Note that the above is merely an example, and does not represent a limitation on the absorption layer 32, and the specific form of the absorption layer 32 is not limited herein.
Optionally, the first conductive layer 331 includes the first transparent conductive layer 3311 and/or the first metal electrode 3312. In this way, current can be conducted through the first transparent conductive layer 3311 and/or the first metal electrode 3312.
Referring to fig. 2, 3,4 and 5, the first conductive layer 331 includes a first transparent conductive layer 3311 and a first metal electrode 3312. It is understood that in other examples, the first conductive layer 331 may include only the first transparent conductive layer 3311, or only the first metal electrode 3312.
Specifically, the first Transparent Conductive layer 3311 is a Transparent Conductive Oxide (TCO). Therefore, the TCO can effectively collect the current of the interdigital back contact thin-film solar cell 30, and the normal work of the interdigital back contact thin-film solar cell 30 is ensured. Moreover, the TCO has high permeability and can reflect light, so that the loss of sunlight can be reduced. Thus, the photoelectric conversion efficiency is advantageously improved.
It is understood that in other embodiments, the transparent conductive film may be a metal film system, a compound film system, a polymer film system, a composite film system, or the like, other than the oxide film system. Such as PEDOT (polymer of EDOT (3, 4-ethylenedioxythiophene monomer), metal grids, carbon nanorod conductive Films (CNB Films), Silver Nanowires (SNW), Graphene (Graphene), and the like. The specific form of the transparent conductive film is not limited herein.
Further, TCOs include, but are not limited to, Indium Tin Oxide (ITO), Fluorine-doped Tin Oxide (FTO), Aluminum-doped Zinc Oxide (AZO). The specific type of TCO is not limited herein.
In the present embodiment, the TCO is Indium Tin Oxide (ITO). The ITO has high light transmittance, strong conductivity, low resistivity, and good stability and alkali resistance. The transparent conductive film made of ITO is favorable for improving the photoelectric conversion efficiency of the interdigital back contact thin film solar cell 30.
Specifically, the first metal electrode 3312 includes an aluminum electrode, a silver electrode, a copper electrode, or the like, which is capable of conducting electricity. The specific form of the first metal electrode 3312 is not limited herein.
Optionally, the second conductive layer 332 includes a second transparent conductive layer 3321 and/or a second metal electrode 3322. As such, current may be drawn through the second transparent conductive layer 3321 and/or the second metal electrode 3322.
In the example of fig. 3, the second conductive layer 1121 includes a second transparent conductive layer 3321 and a second metal electrode 3322. In the examples of fig. 2, 4 and 5, the second conductive layer 1121 includes only the second metal electrode 3322. It is understood that in other examples, the second conductive layer 1121 may include only the second transparent conductive layer 3321.
Specifically, in the present embodiment, the second Transparent Conductive layer 3321 is a Transparent Conductive Oxide (TCO). For further explanation and explanation of the second transparent conductive layer 3321, reference may be made to the explanation and explanation of the transparent conductive film, and further explanation and explanation are omitted here to avoid redundancy.
Specifically, the second metal electrode 3322 includes an aluminum electrode, a silver electrode, a copper electrode, or the like, which is capable of conducting electricity. The specific form of the second metal electrode 3322 is not limited herein.
Referring to fig. 2, alternatively, the method for manufacturing the interdigital back contact thin film solar cell 30 may include: cleaning the glass substrate 31; depositing an absorption layer 32 on the cleaned glass substrate 31; depositing an electron transport layer 341 on the absorption layer 32 using a first mask; depositing a first transparent conductive layer 3311 and a first metal electrode 3312 on the electron transporting layer 341 to obtain a first conductive layer 331; the metal layer may be deposited over the entire surface after the first transparent conductive layer 3311 is deposited, and the metal layer deposited over the entire surface may be laser scribed to divide the metal layer deposited over the entire surface. This makes it possible to form the first metal electrode 3312 and the second metal electrode 3322 spaced apart from each other.
In the related art, at least three laser scribing processes are needed for manufacturing the thin film battery, and only one laser scribing process is needed for manufacturing the interdigital back contact thin film solar battery 30, so that the process steps can be reduced, and the production efficiency can be improved.
It is understood that after the first metal electrode 3312 is deposited, a second metal electrode 3322 may be deposited on the absorption layer 32 by using a second mask to obtain a second conductive layer 1121, wherein the second mask is complementary to the first mask.
It is understood that in the step of depositing the electron transport layer 341 on the absorption layer 32, the electron transport layer 341 may be deposited on the whole surface of the absorption layer 32, and then the electron transport layer 341 exposed from the second mask may be removed by using the second mask complementary to the first mask.
In other words, the electron transport layer 341 may be deposited directly on the region to be deposited, or the electron transport layer 341 may be deposited on the entire surface before the electron transport layer 341 in the non-deposition region is removed. The specific manner of depositing the electron transport layer 341 is not limited herein.
It is understood that other film layers requiring deposition in different regions in the present embodiment are deposited in a similar manner to the electron transport layer 341, and reference may be made to the above-mentioned portions related to depositing the electron transport layer 341, so that redundant description is omitted herein for the sake of avoiding redundancy.
Referring to fig. 3, alternatively, the method for manufacturing the interdigital back contact thin film solar cell 30 may include: cleaning the glass substrate 31; depositing an absorption layer 32 on the cleaned glass substrate 31; depositing an electron transport layer 341 on the absorption layer 32 using a first mask; depositing a hole transport layer 342 on the absorber layer 32 using a second mask, the second mask being complementary to the first mask; a conductive layer and a metal may be sequentially deposited over the entire surfaces of the sides of the electron transport layer 341 and the hole transport layer 342 facing away from the absorption layer 32, and then laser scribing may be performed on the entire surfaces of the deposited conductive layer and metal to divide the entire surfaces of the deposited conductive layer and metal. In this way, the first transparent conductive layer 3311 and the first metal electrode 3312 can be formed over the electron transporting layer 341 to obtain a first conductive layer 331, and the second transparent conductive layer 3321 and the second metal electrode 3322 can be formed over the hole transporting layer 342 to obtain a second conductive layer 1121.
Referring to fig. 4 and 5, alternatively, the method for manufacturing the interdigital back contact thin film solar cell 30 may include: cleaning the glass substrate 31; depositing an absorption layer 32 on the cleaned glass substrate 31; depositing an electron transport layer 341 on the absorption layer 32 using a first mask; depositing a first transparent conductive layer 3311 on the electron transporting layer 341; depositing a hole transport layer 342 on the absorber layer 32 using a second mask, the second mask being complementary to the first mask; the metal layer may be deposited over the entire surface and laser scribed to sever the entire surface deposited metal layer. This makes it possible to form the first metal electrode 3312 and the second metal electrode 3322 spaced apart from each other.
Optionally, the first conductive layer 331 is separated from the second conductive layer 332 by a physical structure. In this way, the first conductive layer 331 is insulated from the second conductive layer 332 by a physical structure, so that the normal operation of the interdigital back contact thin film solar cell 30 is ensured.
Referring to fig. 1, optionally, the physical structure includes a trench 351. Therefore, the manufacturing is convenient, and the production efficiency is improved.
Specifically, a conductive layer may be deposited over the entire surface and laser scribed in the region corresponding to the trench 351. In this manner, the conductive layer in the region corresponding to the trench 351 can be removed by laser scribing, thereby forming the trench 351.
Specifically, a mask may be used to cover regions corresponding to the trenches 351, to expose regions corresponding to the first conductive layer 331 and the second conductive layer 332, and to prepare the first conductive layer 331 and the second conductive layer 332 on the exposed regions. In this manner, the first conductive layer 331 and the second conductive layer 332 can be prevented from being prepared in the region corresponding to the trench 351 by masking, thereby forming the trench 351.
Referring to fig. 6, in other embodiments, the physical structure may include an insulating member 352. In this manner, by spacing the first conductive layer 331 and the second conductive layer 332 by the insulating member 352, dirt such as dust can be prevented from falling between the first conductive layer 331 and the second conductive layer 332.
Specifically, the upper surface of the insulating member 352 may be flush with the upper surfaces of the first conductive layer 331 and the second conductive layer 332, as shown in fig. 6; the upper surface of the insulating member 352 may extend beyond the upper surfaces of the first conductive layer 331 and the second conductive layer 332, as shown in fig. 7.
Further, the insulating member 352 may be made of an elastic material. For example EPE (pearl wool), EVA (ethylene-vinyl acetate copolymer) or PET (polyethylene glycol terephthalate).
In this way, the first conductive layer 331 and the second conductive layer 332 are spaced apart from each other, and the finger back contact thin-film solar cell 30 can be protected by the buffer of the elastic material. Moreover, in the example of fig. 7, since the upper surface of the insulating member 352 exceeds the upper surfaces of the first conductive layer 331 and the second conductive layer 332, the inter-digital back contact thin-film solar cell 30 can be better protected from external impact by the height difference.
Alternatively, the electron transport layer 341 and the hole transport layer 342 are separated by a physical structure. In this way, the electron transport layer 341 is insulated from the hole transport layer 342 by the physical structure, thereby ensuring the normal operation of the interdigital back contact thin-film solar cell 30.
Referring to fig. 1, optionally, the physical structure includes a trench 351. Therefore, the manufacturing is convenient, and the production efficiency is improved.
Note that in the example of fig. 1, the trench 351 may space both the first conductive layer 331 and the second conductive layer 332, and the electron transport layer 341 and the hole transport layer 342.
Specifically, a mask may be used to cover a region corresponding to the trench 351, to expose a region corresponding to the electron transport layer 341 and the hole transport layer 342, and to fabricate the electron transport layer 341 and the hole transport layer 342 on the exposed region. In this manner, the electron transport layer 341 and the hole transport layer 342 can be prevented from being prepared in the region corresponding to the trench 351 by masking, thereby forming the trench 351.
Referring to fig. 6 and 7, in other embodiments, the physical structure may include an insulating member 352. Further, the insulating member 352 may be made of an elastic material. For the explanation and explanation of this part, reference is made to the foregoing description, and redundant description is omitted here.
Note that in the example of fig. 6 and 7, the insulating member 352 may space the first conductive layer 331 and the second conductive layer 332, and may space the electron transport layer 341 and the hole transport layer 342. Therefore, two insulating parts do not need to be prepared respectively, and the production efficiency is improved.
Referring to fig. 8, it is understood that in other examples, the insulating member 352 may include a first insulating portion 3521 and a second insulating portion 3522, the first insulating portion 3521 is separated from the first conductive layer 331 and the second conductive layer 332, and the second insulating portion 3522 is separated from the electron transporting layer 341 and the hole transporting layer 342. The materials of the first insulating portion 3521 and the second insulating portion 3522 may be different.
Referring to fig. 9, it is understood that in other examples, the second insulating portion 3522 may separate the electron transport layer 341 and the hole transport layer 342, and the trench 351 may separate the first conductive layer 331 and the second conductive layer 332.
The specific manner of spacing the first conductive layer 331 and the second conductive layer 332, and spacing the electron transport layer 341 and the hole transport layer 342 is not limited herein.
The cell module of the embodiment of the application comprises the interdigital back contact thin film solar cell 30 of any one of the above.
In the cell module according to the embodiment of the present application, since the interdigital conductive layer 33 is located on the side of the absorption layer 32 away from the glass substrate 31, and the glass substrate 31 generally faces the incident direction of sunlight, the interdigital conductive layer 33 is located on the side of the glass substrate 31 away from the incident direction of sunlight, so that the electrode can be prevented from blocking the sunlight which is emitted to the interdigital back-contact thin-film solar cell 30. Moreover, the parasitic absorption can be reduced without depositing a transparent conductive film on the glass substrate 31, which would cause parasitic absorption. Thus, the short-circuit current density can be increased, which is beneficial to improving the photoelectric conversion efficiency.
The photovoltaic system of the embodiment of the application comprises the battery assembly.
In the photovoltaic system of the embodiment of the application, since the interdigital conductive layer 33 is located on the side of the absorption layer 32 away from the glass substrate 31, and the glass substrate 31 generally faces the incident direction of sunlight, the interdigital conductive layer 33 is located on the side of the glass substrate 31 away from the incident direction of sunlight, so that the electrode can be prevented from shielding sunlight which is emitted to the interdigital back-contact thin-film solar cell 30. Moreover, the parasitic absorption can be reduced without depositing a transparent conductive film on the glass substrate 31, which would cause parasitic absorption. Thus, the short-circuit current density can be increased, which is beneficial to improving the photoelectric conversion efficiency.
The present invention is not intended to be limited to the particular embodiments shown and described, but is to be accorded the widest scope consistent with the principles and novel features herein disclosed.
Claims (10)
1. An interdigital back contact thin film solar cell is characterized by comprising a glass substrate, an absorption layer and an interdigital conductive layer which are sequentially laminated, wherein the interdigital conductive layer comprises a first conductive layer and a second conductive layer which are alternately arranged in the horizontal direction; an electron transport layer is arranged between the first conductive layer and the absorption layer, and/or a hole transport layer is arranged between the second conductive layer and the absorption layer.
2. The interdigital back-contact thin film solar cell of claim 1, wherein the absorber layer comprises at least one of silicon ferrous, copper indium gallium selenide, microcrystalline silicon, nanocrystalline silicon, indium phosphide, amorphous silicon, perovskite, gallium arsenide, cadmium telluride.
3. The interdigitated back contact thin film solar cell of claim 1, wherein the first conductive layer comprises a first transparent conductive layer and/or a first metal electrode.
4. The interdigitated back contact thin film solar cell of claim 1, wherein the second conductive layer comprises a second transparent conductive layer and/or a second metal electrode.
5. The interdigitated back contact thin film solar cell of claim 1, wherein the first conductive layer is separated from the second conductive layer by a physical structure.
6. The interdigital back-contact thin film solar cell of claim 5, wherein the physical structure comprises a trench.
7. The interdigital back-contact thin film solar cell of claim 1, wherein the electron transport layer is separated from the hole transport layer by a physical structure.
8. The interdigital back contact thin film solar cell of claim 7, wherein the physical structure comprises a trench.
9. A cell module comprising an interdigitated back contact thin film solar cell according to any of claims 1 to 8.
10. A photovoltaic system comprising the cell assembly of claim 9.
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| CN202111175128.8A CN113782623A (en) | 2021-10-09 | 2021-10-09 | Interdigital back contact thin film solar cell, cell module and photovoltaic system |
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| CN202111175128.8A CN113782623A (en) | 2021-10-09 | 2021-10-09 | Interdigital back contact thin film solar cell, cell module and photovoltaic system |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114361292A (en) * | 2021-12-29 | 2022-04-15 | 中国建材国际工程集团有限公司 | Back contact copper indium gallium selenide solar cell and manufacturing method thereof |
| CN114361268A (en) * | 2021-12-29 | 2022-04-15 | 中国建材国际工程集团有限公司 | Back contact CdTe solar cell and manufacturing method thereof |
-
2021
- 2021-10-09 CN CN202111175128.8A patent/CN113782623A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114361292A (en) * | 2021-12-29 | 2022-04-15 | 中国建材国际工程集团有限公司 | Back contact copper indium gallium selenide solar cell and manufacturing method thereof |
| CN114361268A (en) * | 2021-12-29 | 2022-04-15 | 中国建材国际工程集团有限公司 | Back contact CdTe solar cell and manufacturing method thereof |
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