CN114284200A - 保持机构 - Google Patents

保持机构 Download PDF

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CN114284200A
CN114284200A CN202111121460.6A CN202111121460A CN114284200A CN 114284200 A CN114284200 A CN 114284200A CN 202111121460 A CN202111121460 A CN 202111121460A CN 114284200 A CN114284200 A CN 114284200A
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frame
permanent magnet
wafer
holding
unit
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斋藤良信
柿沼良典
森俊
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Disco Corp
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    • HELECTRICITY
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    • H01L21/6838Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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    • H01ELECTRIC ELEMENTS
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    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

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Abstract

本发明提供保持机构,其即使未充分精密地进行环状框架的定位也能够可靠地对环状框架进行保持。保持机构包含:晶片保持部,其对晶片进行吸引保持;以及框架支承部,其配设于晶片保持部的外周,对框架进行支承。框架支承部包含永久磁铁。

Description

保持机构
技术领域
本发明涉及对框架单元进行保持的保持机构,将晶片定位于在中央具有收纳晶片的开口部的由强磁性体形成的环状框架的开口部中而将晶片和环状框架粘贴在粘接带上并使环状框架与晶片成为一体而得到该框架单元。
背景技术
晶片在正面上形成有器件区域和围绕器件区域的外周剩余区域,该器件区域中,IC、LSI等多个器件被交叉的多条分割预定线划分,在对晶片的背面进行磨削而形成为期望的厚度之后,利用切割装置、激光加工装置分割成各个器件芯片,分割得到的各器件芯片被用于移动电话、个人计算机等电子设备。
并且,晶片在被搬入到切割装置、激光加工装置之前,将晶片定位于在中央具有收纳晶片的开口部的由强磁性体形成的环状框架的开口部中并通过粘接带与环状框架一体地粘贴而形成为框架单元的形态。
然后,框架单元被搬送机构搬送,被保持在切割装置、激光加工装置的保持机构上而对晶片实施加工(例如参照专利文献1)。
专利文献1:日本特开2015-135888号公报
搬送机构包含:框架保持部,其对环状框架进行吸引保持;晶片保持部,其根据需要而配设,对晶片进行吸引保持;以及搬送臂。并且,保持机构包含:晶片保持部,其借助粘接带对晶片进行吸引保持;以及框架支承部,其对环状框架进行夹持。但是,在保持机构中,夹住环状框架的夹具是通过使立起状态的板以水平地平放的方式转动而将环状框架从上方夹住的构造,因此存在如下问题:当未利用搬送机构将环状框架充分精密地定位时,无法在保持机构中对环状框架进行保持。
发明内容
因此,本发明的目的在于提供即使未充分精密地进行环状框架的定位也能够可靠地对环状框架进行保持的保持机构。
根据本发明,提供一种保持机构,其对框架单元进行保持,该框架单元是通过将晶片定位于在中央具有对该晶片进行收纳的开口部的由强磁性体形成的环状框架的该开口部中并将该晶片和该环状框架粘贴在粘接带上而使该环状框架与该晶片成为一体而得到的,其中,该保持机构具有:晶片保持部,其对该晶片进行吸引保持;以及框架支承部,其配设于该晶片保持部的外周,对该环状框架进行支承,该框架支承部包含永久磁铁。
优选该框架支承部包含脱离部,该脱离部使磁性吸附于该永久磁铁的环状框架脱离。优选该脱离部至少包含:筒体,其由非磁性体形成,对该永久磁铁进行收纳;以及进退部,其使该永久磁铁与该筒体相对地进退,使该永久磁铁从该筒体相对地后退从而使该环状框架从该永久磁铁脱离。
根据本发明,保持机构具有:晶片保持部,其对晶片进行吸引保持;以及框架支承部,其配设于该晶片保持部的外周,对环状框架进行支承,该框架支承部包含永久磁铁,因此,即使环状框架的定位不充分精密,保持机构也能够对环状框架进行保持。
附图说明
图1是本发明实施方式的保持机构的立体图。
图2的(a)是图1所示的脱离部的剖视图,图2的(b)是永久磁铁后退的状态下的脱离部的剖视图。
图3是框架单元的立体图。
图4是具有图1所示的保持机构的切割装置的立体图。
图5是图4所示的第一搬送机构的立体图。
图6是图4所示的第二搬送机构的立体图。
标号说明
2:保持机构;4:晶片保持部;6:框架支承部;12:永久磁铁;14:脱离部;16:筒体;18:进退部;34:框架单元;36:环状框架;36a:环状框架的开口部;38:晶片;38a:晶片的正面;38b:晶片的背面;40:粘接带。
具体实施方式
以下,参照附图对本发明实施方式的保持机构进行说明。
参照图1进行说明,整体用标号2表示的保持机构具有:晶片保持部4,其对晶片进行吸引保持;以及框架支承部6,其配设于晶片保持部4的外周,对环状框架进行支承。
晶片保持部4包含圆板状的吸附卡盘8和嵌合于吸附卡盘8的外周的壳体10。吸附卡盘8由多孔质材料形成,经由流路与吸引单元(未图示)连接。如图1所示,吸附卡盘8的上表面露出,另一方面,吸附卡盘8的外周部和下表面被壳体10覆盖。并且,在晶片保持部4中,使吸引单元进行动作而在吸附卡盘8的上表面上生成吸引力,由此对载置于吸附卡盘8的上表面的晶片进行吸引保持。
关于框架支承部6,重要的是包含对环状框架进行磁性吸附的永久磁铁12。另外,如图2所示,优选框架支承部6包含使磁性吸附于永久磁铁12的环状框架脱离的脱离部14。本实施方式的脱离部14包含:筒体16,其由非磁性体构成,收纳永久磁铁12;以及进退部18,其使永久磁铁12与筒体16相对地进退,脱离部14使永久磁铁12从筒体16相对地后退而使环状框架从永久磁铁12脱离。
如图1所示,框架支承部6在晶片保持部4的周向上隔开间隔地配置有多个(在本实施方式中为4个)。在本实施方式中,框架支承部6的筒体16分别经由从晶片保持部4的壳体10的外周向径向外侧延伸的一对支承棒20而与壳体10连接。在各筒体16的上端收纳有对环状框架进行磁性吸附的永久磁铁12。另外,各筒体16在径向上移动自如地支承于支承棒20,通过调整各筒体16的径向位置,能够对尺寸不同的多种环状框架进行支承。
参照图2进行说明,本实施方式的永久磁铁12具有:圆柱状的主部12a,其利用上端面来磁性吸附环状框架;以及环状的凸缘部12b,其从主部12a的下端向径向外侧延伸。另外,永久磁铁12在图2的(a)所示的上升位置与图2的(b)所示的下降位置之间沿上下方向移动自如地收纳于筒体16的内部。如通过参照图2所理解的那样,在上升位置,永久磁铁12的上表面与筒体16的上表面为同一平面,在下降位置,永久磁铁12的上表面位于比筒体16的上表面靠下方例如5mm左右的位置。
如图2所示,在筒体16的上下方向中间部设置有分隔壁22,通过该分隔壁22,筒体16的内部被分隔为收纳永久磁铁12的上侧收纳室24和收纳进退部18的下侧收纳室26。在分隔壁22的中央部形成有贯通孔22a。
在上侧收纳室24的上端侧形成有向筒体16的径向内侧突出的突出部24a。如图2的(a)所示,在从进退部18对永久磁铁12朝上施力时,永久磁铁12的凸缘部12b的上端与突出部24a的下端卡住,从而永久磁铁12被定位于上升位置。另一方面,当从进退部18对永久磁铁12朝下施力时,如图2的(b)所示,永久磁铁12的下表面与分隔壁22的上表面接触,永久磁铁12被定位于下降位置。另外,在下侧收纳室26中,在上下方向上隔开间隔地形成有上部开口26a和下部开口26b。
参照图2继续进行说明,本实施方式的进退部18具有:杆28,其从永久磁铁12的下端通过贯通孔22a而向下方延伸;活塞30,其固定于杆28的下端且配置于下侧收纳室26;螺旋弹簧32,其配置于活塞30的下方;以及压缩空气提供源25,其与下侧收纳室26的上部开口26a连接。
在进退部18中,停止从压缩空气提供源向下侧收纳室26提供压缩空气,并通过螺旋弹簧32将活塞30向上方推起,由此对永久磁铁12施加朝上的力,使永久磁铁12相对于筒体16上升,将永久磁铁12定位于上升位置。另外,关于进退部18,从压缩空气提供源25向下侧收纳室26提供压缩空气而将活塞30向下方压下,由此对永久磁铁12施加朝下的力,使永久磁铁12相对于筒体16下降,将永久磁铁12定位于下降位置。另外,通过将活塞30向下方压下,从下部开口26b排出空气。
而且,保持机构2的脱离部14将永久磁铁12定位于能够利用永久磁铁12对载置于筒体16的环状框架进行磁性吸附的上升位置,并且将永久磁铁12定位于能够使载置于筒体16的环状框架从永久磁铁12脱离的下降位置。
在图3中示出了由上述那样的保持机构2保持的框架单元34。框架单元34是借助圆形的粘接带40将环状框架36和圆板状的晶片38一体化而得的单元。环状框架36由强磁性体形成,在中央具有对晶片38进行收纳的圆形的开口部36a。晶片38能够由硅等形成。晶片38的正面38a被格子状的分割预定线42划分为多个矩形区域,在多个矩形区域中分别形成有IC、LSI等器件44。在本实施方式中,如图3所示,在定位于环状框架36的开口部36a的粘接带40上粘贴晶片38的背面38b,使环状框架36与晶片38一体化。
在图4中示出能够安装上述的保持机构2的切割装置46。在本实施方式的切割装置46中,沿箭头X所示的X轴方向移动自如地设置有保持机构2。此外,图1中箭头Y所示的Y轴方向是与X轴方向垂直的方向,图1中箭头Z所示的Z轴方向是分别与X轴方向以及Y轴方向垂直的上下方向。另外,X轴方向以及Y轴方向所规定的XY平面实质上是水平的。
切割装置46具有:切削单元48,其具有对保持机构2所保持的晶片38进行切削的切削刀具48a并且该切削刀具48a能够旋转;拍摄单元50,其对保持机构2所保持的晶片38进行拍摄;升降自如的盒载置台54,其对收纳有多张框架单元34的盒52进行载置;搬出搬入机构58,其从盒52中拉出切削前的框架单元34并搬出到暂放台56上,并且将定位在暂放台56上的切削完成的框架单元34搬入到盒52中;第一搬送机构60,其将从盒52搬出到暂放台56上的切削前的框架单元34搬送到保持机构2;清洗单元62,其对切削完成的框架单元34进行清洗;以及第二搬送机构64,其将切削完成的框架单元34从保持机构2搬送到清洗单元62。
参照图5对第一搬送机构60进行说明。第一搬送机构60包含:支承轴68,其以沿Z轴方向延伸的轴线66为中心旋转自如并且沿Z轴方向升降自如;L字状的臂70,其固定于支承轴68的上端;以及框架单元保持部72,其附设于臂70的前端。
框架单元保持部72具有:一对板74,它们彼此隔开间隔地固定于臂70的前端下表面上;多个永久磁铁76,它们安装于一对板74的下表面上,对环状框架36进行磁性吸附;以及圆板状的吸附片78,其配置于一对板74之间,对晶片38进行吸引保持。第一搬送机构60的永久磁铁76的磁力比保持机构2的永久磁铁12的磁力弱。另外,在吸附片78的下表面上形成有多个吸引孔(未图示),各吸引孔与吸引单元连接。
参照图6对第二搬送机构64进行说明。第二搬送机构64包含:Y轴可动部件80,其设置为在Y轴方向上移动自如;以及Y轴进给机构82,其使Y轴可动部件80在Y轴方向上移动。Y轴进给机构82具有:滚珠丝杠84,其与Y轴可动部件80连结并沿Y轴方向延伸;以及电动机86,其使滚珠丝杠84旋转。Y轴进给机构82通过滚珠丝杠84将电动机86的旋转运动转换为直线运动并传递给Y轴可动部件80,使Y轴可动部件80沿着在Y轴方向上延伸的一对导轨88在Y轴方向上移动。
在Y轴可动部件80的前端下表面上,经由能够由气缸等适当的致动器构成的升降机构90而升降自如地连结有框架单元保持部92。框架单元保持部92具有:H形状的板94,其固定于升降机构90的下端;多个永久磁铁96,它们安装于板94的下表面上,对环状框架36进行磁性吸附;以及圆板状的吸附片98,其配置于板94的中央部下表面上,对晶片38进行吸引保持。第二搬送机构64的永久磁铁96的磁力比保持机构2的永久磁铁12的磁力弱。另外,在吸附片98的下表面上形成有多个吸引孔(未图示),各吸引孔经由流路100与吸引单元连接。
在使用切割装置46将框架单元34的晶片38分割成按照每个器件44的器件芯片时,首先,实施搬出工序,利用搬出搬入机构58将切削前的框架单元34从盒52搬出到暂放台56。
在实施了搬出工序之后,实施第一搬送工序,利用第一搬送机构60将框架单元34从暂放台56搬送到保持机构2。在第一搬送工序中,首先,将第一搬送机构60的永久磁铁76定位于环状框架36的上方,并且将吸附片78定位于晶片38的上方。接着,通过使臂70下降,使永久磁铁76的下表面与环状框架36的上表面接触,利用永久磁铁76的磁力对环状框架36进行保持,并且使吸附片78的下表面与晶片38的正面38a接触,利用吸附片78的吸引力对晶片38进行保持。
接着,使臂70上升,在使框架单元34从暂放台56离开之后,使臂70旋转,将框架单元34定位于被定位在装卸位置(图4所示的位置)的保持机构2的上方。接着,通过使臂70下降,使环状框架36的下表面与保持机构2的永久磁铁12的上表面接触,利用永久磁铁12的磁力对环状框架36进行保持,并且使晶片38的背面38b侧(粘接带40侧)与保持机构2的吸附卡盘8的上表面接触,利用吸附卡盘8的吸引力对晶片38进行保持。此时,将保持机构2的永久磁铁12定位在上升位置。
接着,在解除了第一搬送机构60的吸附片78的吸引力之后,使第一搬送机构60的臂70上升。如上所述,第一搬送机构60的永久磁铁76的磁力比保持机构2的永久磁铁12的磁力弱,因此环状框架36从永久磁铁76交接到永久磁铁12。并且,当使臂70上升时,框架单元34被保持机构2保持,从第一搬送机构60分离。这样,从暂放台56将框架单元34搬送到保持机构2。
在实施了第一搬送工序之后,实施分割工序,使保持机构2移动到切削单元48下方的切削加工位置,利用切削刀具48a沿着保持机构2所保持的晶片38的分割预定线42实施切削加工,分割成按照每个器件44的器件芯片。
在实施了分割工序之后,实施第二搬送工序,利用第二搬送机构64将框架单元34从保持机构2搬送至清洗单元62。在第二搬送工序中,首先,使保持机构2移动到装卸位置,并且将第二搬送机构64的永久磁铁96定位于环状框架36的上方,并且将吸附片98定位于晶片38的上方。接着,通过使框架单元保持部92下降,使永久磁铁96的下表面与环状框架36的上表面接触,利用永久磁铁96的磁力对环状框架36进行保持,并且使吸附片98的下表面与晶片38的正面38a接触,利用吸附片98的吸引力对晶片38进行保持。
接着,解除保持机构2的吸附卡盘8的吸引力,并且在将保持机构2的永久磁铁12定位于下降位置之后,使框架单元保持部92上升。如上所述,第二搬送机构64的永久磁铁96的磁力比保持机构2的永久磁铁12的磁力弱,当将保持机构2的永久磁铁12定位于下降位置时,永久磁铁12从环状框架36离开,因此对于载置于筒体16的环状框架36,从与环状框架36接触的第二搬送机构64的永久磁铁96作用的磁力比从保持机构2的永久磁铁12作用的磁力强。因此,当使框架单元保持部92上升时,框架单元34被第二搬送机构64的框架单元保持部92保持,从保持机构2分离。然后,使第二搬送机构64的Y轴进给机构82和升降机构90进行动作,将框架单元34搬送到清洗单元62。
在实施了第二搬送工序之后,实施清洗工序,利用清洗单元62对分割工序中产生的切削屑进行清洗,接着实施第三搬送工序,利用第一搬送机构60将框架单元34从清洗单元62搬送到暂放台56。然后,实施搬入工序,利用搬出搬入机构58将框架单元34从暂放台56搬入盒52中。
虽未图示,但暂放台56以及清洗单元62分别与保持机构2同样地具有:永久磁铁,其具有比第一、第二搬送机构60、64的永久磁铁76、96的磁力强的磁力;以及脱离部,其使磁性吸附于永久磁铁的环状框架36脱离。并且,在第二搬送工序时,由第二搬送机构64搬送的框架单元34的环状框架36被清洗单元62的永久磁铁磁性吸附,由此框架单元34从第二搬送机构64交接到清洗单元62。
在第三搬送工序时,被清洗单元62的永久磁铁磁性吸附的环状框架36通过清洗单元62的脱离部而从永久磁铁脱离,由此能够进行框架单元34从清洗单元62向第一搬送机构60的交接。另外,由第一搬送机构60从清洗单元62搬送来的框架单元34的环状框架36被暂放台56的永久磁铁磁性吸附,由此框架单元34从第一搬送机构60交接到暂放台56。
另外,在搬出工序和第一搬送工序时,暂放台56的永久磁铁通过脱离部从能够磁性吸附环状框架36的位置后退。由此,在利用搬出搬入机构58从盒52向暂放台56搬出框架单元34和利用第一搬送机构60从暂放台56向保持机构2搬送框架单元34时,暂放台56的永久磁铁不会磁性吸附环状框架36,不会阻碍框架单元34的搬出、搬送。
如上所述,在本实施方式的保持机构2中,通过永久磁铁12的磁力对环状框架36进行保持,因此即使未充分精密地进行环状框架36相对于保持机构2的定位,也能够可靠地对环状框架36进行保持。
此外,在第一搬送机构60中,也可以不设置吸附片78而是通过利用永久磁铁76磁性吸附环状框架36来保持框架单元34。另外,在第二搬送机构64中,也可以与第一搬送机构60同样地,不设置吸附片98而是通过利用永久磁铁96磁性吸附环状框架36来保持框架单元34。

Claims (3)

1.一种保持机构,其对框架单元进行保持,该框架单元是通过将晶片定位于在中央具有对该晶片进行收纳的开口部的由强磁性体形成的环状框架的该开口部中并将该晶片和该环状框架粘贴在粘接带上而使该环状框架与该晶片成为一体而得到的,其中,
该保持机构具有:
晶片保持部,其对该晶片进行吸引保持;以及
框架支承部,其配设于该晶片保持部的外周,对该环状框架进行支承,
该框架支承部包含永久磁铁。
2.根据权利要求1所述的保持机构,其中,
该框架支承部还包含脱离部,该脱离部使磁性吸附于该永久磁铁的该环状框架脱离。
3.根据权利要求2所述的保持机构,其中,
该脱离部包含:
筒体,其由非磁性体形成,对该永久磁铁进行收纳;以及
进退部,其使该永久磁铁与该筒体相对地进退,
使该永久磁铁从该筒体相对地后退从而使该环状框架从该永久磁铁脱离。
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