CN114252319B - Fault analysis method of semiconductor laser, preparation method of sample and system - Google Patents
Fault analysis method of semiconductor laser, preparation method of sample and system Download PDFInfo
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- CN114252319B CN114252319B CN202210189423.7A CN202210189423A CN114252319B CN 114252319 B CN114252319 B CN 114252319B CN 202210189423 A CN202210189423 A CN 202210189423A CN 114252319 B CN114252319 B CN 114252319B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
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- G—PHYSICS
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
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Abstract
The application provides a fault analysis method of a semiconductor laser, a preparation method of a sample and a system. The method comprises the following steps: sealing glue curing is carried out on the semiconductor laser TO be analyzed through a curing agent, the curing agent and the TO support form a sealing area, and the chip is sealed in the sealing area; grinding the semiconductor laser to be analyzed after the sealing glue is solidified until the crystal back of the chip is exposed to obtain a ground semiconductor laser; based on the fact that the wafer back carries out hotspot positioning on the ground semiconductor laser so as to carry out failure analysis, the wafer back of the laser can be completely exposed, damage or fragmentation caused by the fact that a device is ground and exposed due to overlarge grinding stress is avoided, and the bottleneck that the conventional laser sample can only carry out failure positioning from the front side is broken through.
Description
Technical Field
The application relates to the technical field of failure analysis sample preparation, in particular to a fault analysis method of a semiconductor laser, a sample preparation method and a sample preparation system.
Background
When semiconductor laser products are positioned in a failure mode, hot spot positions are not clear due to shielding of the metal layer.
Disclosure of Invention
The application aims to provide a fault analysis method of a semiconductor laser and a preparation method of a fault analysis sample of the semiconductor laser, so as to solve the technical problem that in the prior art, front failure positioning cannot be effectively positioned due to shielding of a metal layer.
In a first aspect, the present application provides a method for analyzing a fault of a semiconductor laser, where the semiconductor laser includes a chip and a TO mount, the chip is fixed on the TO mount, and the method includes:
sealing and solidifying the semiconductor laser TO be analyzed through a solidifying agent, wherein the solidifying agent and the TO support form a sealing area TO seal the chip in the sealing area;
grinding the semiconductor laser to be analyzed after the sealing glue is solidified until the crystal back of the chip is exposed to obtain a ground semiconductor laser;
and carrying out hotspot positioning on the ground semiconductor laser based on the crystal back so as to carry out failure analysis.
In some optional implementations, the TO bracket includes a die attach platform, and the chip is fixed TO a side surface of the die attach platform; the semiconductor laser to be analyzed after the sealing glue is solidified is ground until the crystal back of the chip is exposed, so that the ground semiconductor laser is obtained, and the method comprises the following steps:
and grinding the semiconductor laser to be analyzed after the sealing glue is solidified from the opposite side of the die bonding platform on which the chip is fixed until the back of the chip is exposed, thereby obtaining the ground semiconductor laser.
In some optional implementations, the grinding the semiconductor laser device to be analyzed after the sealing compound is cured from one side of the die bonding platform until the back of the chip is exposed to obtain a ground semiconductor laser device, including:
grinding the semiconductor laser to be analyzed after the sealing glue is solidified by using a grinding tool with first granularity from the opposite side of the die bonding platform on which the chip is fixed until the copper support of the die bonding platform is removed;
continuing to grind by using the grinding tool with the second granularity until the corner thinning begins to collapse, and continuing to grind by using the grinding tool with the third granularity;
after correcting the residual metal, polishing by using a grinding tool with a fourth granularity to obtain a ground semiconductor laser after polishing;
wherein the first particle size is greater than the second particle size and greater than the third particle size and greater than the fourth particle size.
In some alternative implementations, the first particle size is 180 mesh, the second particle size is 400 mesh, the third particle size is 2000 mesh, and the fourth particle size is 4000 mesh.
In some optional implementations, the method further comprises: and acquiring an image of the semiconductor laser to be analyzed after the sealing glue is solidified in the grinding process, and determining a grinding state through image identification, wherein the grinding state comprises a copper support removal completion state, a corner thinning starting collapse state, a residual metal state and the like.
In some alternative implementations, the levelness of the semiconductor laser needs to be controlled within one degree during the lapping process.
In a second aspect, a method for preparing a semiconductor laser fault analysis sample is provided, where the semiconductor laser includes a chip and a TO mount, and the chip is fixed on the TO mount, and the method includes:
sealing and solidifying the semiconductor laser TO be analyzed through a solidifying agent, wherein the solidifying agent and the TO support form a sealing area TO seal the chip in the sealing area;
and grinding the semiconductor laser to be analyzed after the sealing glue is solidified until the crystal back of the chip is exposed, so as to obtain a semiconductor laser fault analysis sample.
In some optional implementations, the TO bracket includes a die attach platform, and the chip is fixed TO a side surface of the die attach platform; the semiconductor laser to be analyzed after the sealing glue is solidified is ground until the crystal back of the chip is exposed, so that the ground semiconductor laser is obtained, and the method comprises the following steps:
and grinding the semiconductor laser to be analyzed after the sealing glue is solidified from one side of the die bonding platform, and exposing the back of the chip to obtain the ground semiconductor laser.
In some optional implementations, the grinding the semiconductor laser device to be analyzed after the sealing compound is cured from one side of the die bonding platform until the back of the chip is exposed to obtain a ground semiconductor laser device, including:
grinding the semiconductor laser to be analyzed after the sealing glue is solidified by using a grinding tool with first granularity from the opposite side of the die bonding platform on which the chip is fixed until the copper support of the die bonding platform is removed;
continuing to grind by using the grinding tool with the second granularity until the corner thinning begins to collapse, and continuing to grind by using the grinding tool with the third granularity;
after correcting the residual metal, polishing by using a grinding tool with a fourth granularity to obtain a ground semiconductor laser after polishing;
wherein the first particle size is greater than the second particle size and greater than the third particle size and greater than the fourth particle size.
In a third aspect, a fault analysis system for a semiconductor laser is provided. Semiconductor laser includes chip and TO support, the chip is fixed on the TO support, the system includes:
the curing device is used for sealing and curing the semiconductor laser TO be analyzed through a curing agent, and the curing agent and the TO support form a sealing area TO seal the chip in the sealing area;
the grinding device is used for grinding the semiconductor laser to be analyzed after the sealing glue is solidified until the crystal back of the chip is exposed, so that the ground semiconductor laser is obtained;
and the analysis device is used for carrying out hotspot positioning on the ground semiconductor laser based on the crystal back so as to carry out failure analysis.
According TO the fault analysis method and the sample preparation method and system for the semiconductor laser, sealing and curing are carried out on the semiconductor laser TO be analyzed through the curing agent, the curing agent and the TO support form a sealing area, and a chip is sealed in the sealing area; grinding the semiconductor laser to be analyzed after the sealing glue is solidified until the crystal back of the chip is exposed to obtain a ground semiconductor laser; based on the fact that the wafer back carries out hotspot positioning on the ground semiconductor laser so as to carry out failure analysis, the wafer back of the laser can be completely exposed, damage or fragmentation caused by grinding exposure of a device due to overlarge grinding stress is avoided, and the bottleneck that the conventional laser sample can only carry out failure positioning from the front side is broken through.
Drawings
In order to more clearly illustrate the detailed description of the present application or the technical solutions in the prior art, the drawings needed to be used in the detailed description of the present application or the prior art description will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a schematic flow chart of a method for analyzing a fault of a semiconductor laser according to an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of a semiconductor laser according to an embodiment of the present disclosure;
fig. 3 is a schematic diagram of a sample preparation process in fault analysis of a semiconductor laser according to an embodiment of the present disclosure;
fig. 4 is a schematic diagram of a failure analysis process in fault analysis of a semiconductor laser according to an embodiment of the present disclosure;
fig. 5 is a schematic diagram of a failure analysis process in fault analysis of another semiconductor laser provided in the embodiment of the present application;
fig. 6 is a schematic flow chart of a method for preparing a semiconductor laser fault analysis sample according to an embodiment of the present disclosure;
fig. 7 is a schematic structural diagram of a fault analysis system of a semiconductor laser according to an embodiment of the present application.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present application, presented in the accompanying drawings, is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Some embodiments of the present application will be described in detail below with reference to the accompanying drawings. The embodiments described below and the features of the embodiments can be combined with each other without conflict.
Fig. 1 is a schematic flow chart of a method for analyzing a fault of a semiconductor laser. The method can be applied TO failure analysis of the semiconductor laser 200 shown in fig. 2, the semiconductor laser 200 may include a chip 210 and a TO mount 220, the chip 210 is fixed on the TO mount 220, as shown in fig. 1, the method may include:
and S110, sealing and curing the semiconductor laser TO be analyzed through a curing agent, wherein the curing agent and the TO support form a sealing area TO seal the chip in the sealing area.
The curing agent can be in a liquid state and a solid state, the semiconductor laser to be analyzed is convenient to glue and seal in the liquid state, and the semiconductor laser to be analyzed which is glued and sealed can be protected in the grinding process by certain hardness in the solid state. As one example, the curing agent may be an epoxy resin, for example, the curing agent is a high density epoxy resin. The epoxy resin is a high molecular polymer, the molecular formula is (C11H 12O 3) n, and the epoxy resin is a general name of a polymer containing more than two epoxy groups in the molecule.
Wherein, when treating analysis semiconductor laser and seal the glue solidification, can make the mould earlier, this mould is including enclosing the subassembly, or treats analysis semiconductor laser and enclose the subassembly, and this mould has the cavity, and this cavity can be enclosed the subassembly by enclosing, or treats analysis semiconductor laser and enclose the subassembly and enclose and close formation. Then, a liquid curing agent can be filled in the cavity, and mold making and demolding are performed after the curing agent is changed into a solid state, so that the semiconductor laser to be analyzed after sealing and curing is obtained.
In addition, excess curing agent may be preferentially removed during mold release.
In the embodiment of the present application, in the semiconductor laser device to be analyzed after the sealing compound is cured, the semiconductor laser device to be analyzed is fixed in the curing agent, so as to reduce the possibility of damage or fracture of the device due to improper force control in the subsequent grinding process.
And S120, grinding the semiconductor laser to be analyzed after the sealing glue is solidified until the crystal back of the chip is exposed, and obtaining the ground semiconductor laser.
For example, for sample preparation of a device carried on a special TO support, a sample box larger than the size of the sample can be prepared first, horizontal surface sealing is carried out, a semiconductor laser TO be analyzed after sealing solidification is obtained, then a bottom TO metal tube shell is removed by adopting a grinding method, a silicon substrate is ground by utilizing detail grinding TO expose a back gold layer (generally referring TO a bonding surface of two metals, also called Gong Jinceng), and finally detail correction polishing is carried out, so that a laser crystal back is completely exposed. The special TO holder may refer TO a TO holder with a chip mounted on its side, and the sample box may also be referred TO as a mold.
During the grinding process, the levelness of the semiconductor laser needs to be controlled within one degree.
And when the crystal back of the sample is exposed and has no crack and residual grinding lines, finishing grinding to obtain the ground semiconductor laser.
And S130, carrying out hot spot positioning on the ground semiconductor laser based on the crystal back so as to carry out failure analysis.
When failure analysis is carried out, hot spot positioning can be carried out through a microscope, so that failure analysis can be carried out on a hot spot area based on the positioning result. Because the ground semiconductor laser crystal back is exposed, the semiconductor laser crystal back is not shielded by a metal layer when being positioned, and the failure positioning accuracy can be improved. Wherein the microscope may be an infrared microscope having an IR transmission function.
In some embodiments, as shown in fig. 2, the TO holder 220 includes a die attach platform, and the chip is attached TO a side of the die attach platform; based on this, the step S120 can be specifically realized by the following steps:
and grinding the semiconductor laser to be analyzed after the sealing glue is solidified from the opposite side of the die bonding platform on which the chip is fixed until the back of the chip is exposed, thereby obtaining the ground semiconductor laser.
As shown in fig. 3, a portion a in fig. 3 is a state of the semiconductor laser TO be analyzed, and includes a TO holder die bonding platform and pins, and the chip is fixed TO a side surface of the die bonding platform.
Referring to part B in fig. 3, according to the glue sealing area, performing glue sealing and curing on the semiconductor laser device to be analyzed by using a curing agent, so as to obtain the semiconductor laser device to be analyzed after the glue sealing and curing as shown in part C in fig. 3;
referring to a portion D in fig. 3, for the semiconductor laser device to be analyzed after the encapsulation curing, the semiconductor laser device to be analyzed after the encapsulation curing is ground from the opposite side of the die-bonding platform on which the chip is fixed until the ground semiconductor laser device shown in a portion E in fig. 3 is obtained.
In some embodiments, the step of grinding the semiconductor laser to be analyzed after the sealing compound is cured from one side of the die bonding platform until the back of the chip is exposed to obtain the ground semiconductor laser may be specifically implemented by the following steps:
step a), grinding the semiconductor laser to be analyzed after sealing glue solidification by using a grinding tool with first granularity from the opposite side of the die bonding platform fixed with the chip until the copper support of the die bonding platform is removed; the copper support may be referred to herein as a die bond platform.
Step b), using the grinding tool with the second granularity to continuously grind until the corner thinning starts to collapse, and using the grinding tool with the third granularity to continuously grind;
and c), correcting the residual metal, polishing by using a grinding tool with fourth granularity, and obtaining the ground semiconductor laser after polishing.
Wherein the first particle size is larger than the second particle size and larger than the third particle size and larger than the fourth particle size. For example, the first particle size is 180 mesh, the second particle size is 400 mesh, the third particle size is 2000 mesh, and the fourth particle size is 4000 mesh. The grinding steps are respectively the first step, the TO copper bracket is removed, and a 180-mesh grinding tool can be selected; removing the Si (silicon) carrier plate, namely grinding by selecting 400 meshes, changing to 2000 meshes for continuous grinding when the corner thinning starts to collapse, and correcting the residual metal on the back of the sample; and thirdly, polishing the crystal back of the sample by using 4000 meshes of non-velvet cotton cloth with the thickness of 0.1 um.
In addition, the rotation speed of the grinding tool needs to be controlled below 600 revolutions during the grinding process, so that the horizontal degree can be better ensured.
During the grinding process, when the grinding result deviates from the expected value, the determination and modification can be carried out by using a level meter and carborundum paper.
In some embodiments, further comprising: the method comprises the steps of obtaining an image of a semiconductor laser to be analyzed after sealing glue solidification in a grinding process, and determining a grinding state through image identification, wherein the grinding state comprises a copper support removal completion state, a corner thinning starting collapse state, a residual metal state and the like.
In the process of grinding the semiconductor laser to be analyzed after the sealing glue is solidified, images to be judged of the semiconductor laser to be analyzed after the sealing glue is solidified in the grinding process can be acquired periodically or in a user triggering mode, and the grinding state classification can be carried out based on the images.
For example, the image to be determined may include a background, and the background and the semiconductor laser to be analyzed after the sealing compound is cured have a color difference that is easier to distinguish, for example, the background may be green or black, and after the image to be determined is determined, edge recognition may be performed first, where the edge mainly refers to an edge of the semiconductor laser to be analyzed after the background and the sealing compound are cured, and then the target image of the semiconductor laser to be analyzed after the sealing compound is cured is cut out from the image to be determined based on the recognized edge. And then, identifying the target image based on a pre-trained image classification model, and determining the grinding state classification of the semiconductor laser to be analyzed in the image to be judged.
The edge recognition algorithm herein may include a plurality of algorithms, for example, an edge of a picture that can be detected first in the edge detection process belongs to high frequency information. The high frequency information in the picture refers to rapid color change, and the low frequency information refers to gradual color change. And the noise part in the picture also belongs to high-frequency information, so that the image needs to be denoised. It is common to smooth images using a gaussian filter kernel of 5*5, the number of filter kernels being gaussian distributed. Then, the magnitude and direction of the pixel gradient are calculated, and the difference in the horizontal and vertical directions is calculated by the commonly used operators Rober, sobel. And finding out a region with larger gradient, wherein the region belongs to a region with enhanced image, and the obtained edge information is thicker. Non-maxima suppression, a double threshold method, and hysteresis edge tracking are then performed to determine true edges. The non-maximum suppression belongs to an edge thinning method, positions with large gradients are possible to be edges, local maximum values of pixel points are found along the gradient direction at the positions, and the non-maximum suppression is carried out. In the dual-threshold method, a maxval and a minval are set, wherein a strong edge is defined when the gradient is greater than maxval, a weak edge is defined when the gradient is between maxval and minval, and a weak edge is defined when the gradient is less than minval. And (4) lagging edge tracking, mainly processing some pixel points with gradient values in maxval and minval. Since the edge is continuous, it can be considered that the weak edge is connected to the strong edge if the weak edge is a true edge, and thus it can be determined whether the weak edge is a true edge.
In the embodiment of the application, based on edge detection, the edge of the semiconductor laser to be analyzed after the sealing compound is cured can be determined, and since the edge is in a specific shape, the specific shape is related to the shape of the sealing compound model, the detected edge can be screened again based on the predetermined shape, and the target image is intercepted based on the screened edge.
In addition, the semiconductor laser to be analyzed at the second designated position after being cured by the sealing compound can be shot at the first designated position through the designated posture so as to obtain an image to be judged with a known scale, the scale information can be obtained by shooting an image of an object with a known size at the second designated position through the designated posture at the first designated position and calculating, the designated posture mainly refers to the posture of the camera, and the pixel position of the semiconductor laser to be analyzed after being cured by the sealing compound can be determined firstly during edge detection, and then the difference between the horizontal direction and the vertical direction can be calculated based on the calculation of the amplitude and the direction of the pixel gradient, wherein the commonly used operator is Rober and sobel. Finding out a region with larger gradient, wherein the region belongs to an image enhancement region; and then based on a predetermined specific shape, comparing the pixel position of the semiconductor laser to be analyzed after the sealing glue is solidified with the region with larger gradient, determining the position of the region with larger gradient in the image to be judged, and then intercepting the target image based on the position of the specific shape in the image to be judged. When the pixel position of the semiconductor laser to be analyzed after the sealing glue is cured is determined, the pixels corresponding to the non-background pixels can be determined as the pixels of the semiconductor laser to be analyzed after the sealing glue is cured, and then a more accurate edge is determined based on the edge identification and the specific shape.
The image classification model may be a neural network model. Training samples corresponding to each grinding state classification can be predetermined, and then the neural network model is trained based on the training samples to obtain a trained classification model.
In some embodiments, the correspondence between the polishing state and the next polishing action may be preset. After the classification of the polishing state of the target image is determined, a prompt for the next polishing action may be given together.
The correspondence between the polishing state and the next polishing action may be set based on experience.
As shown in fig. 4-5, the ground semiconductor laser and the failure analysis process of the ground semiconductor laser are shown, and the abnormal position is determined. In the sample preparation for semiconductor laser failure analysis, the obtained sample (i.e. the Polished semiconductor laser) may be as shown in part a of fig. 4, where the Polished face is the Polished face, the n-electrode is the back of the wafer, and the active layer is the insulating layer.
Based on the milled semiconductor laser, a hotspot locating process as shown in part B of fig. 4 may be performed to determine a hotspot region to be analyzed.
Based on the positioning result of the hot spot positioning (i.e., the hot spot region) shown in the portion B of fig. 4, a Focused Ion Beam (FIB) image and a Transmission Electron Microscope (TEM) image are acquired, the failure analysis process shown in fig. 5 is performed, and finally, the fault region can be accurately positioned, and the cause of the fault is determined based on the image of the fault region. Wherein the FIB image may be acquired by a FIB transmission electron microscope.
Referring to fig. 5, a section a, an AB region of an abnormality may be located by a FIB image, and then a TEM image of the AB region may be acquired, and the TEM image based on the AB region may be gradually enlarged to determine a specific abnormality, for example, a TEM analysis result as shown in fig. 5, section B may be obtained.
According TO the embodiment of the application, a sample preparation can be carried out on a device carried on a special TO packaging support, a sample box larger than the size of the sample is prepared firstly, a grinding method is adopted TO remove a bottom TO metal tube shell after horizontal surface sealing glue is carried out, then fine grinding is finally utilized TO grind a silicon substrate TO expose a back gold layer, and fine correction polishing is finally carried out by utilizing carborundum paper and flanneless cloth, so that the crystal back of a laser is completely exposed. The method adopts the existing grinding method to reduce the possibility of damage or fragmentation caused by grinding exposure of the device due to overlarge grinding stress, breaks through the bottleneck that the existing laser sample can only carry out failure positioning from the front side, and avoids the technical problems of inaccurate positioning and low failure positioning accuracy caused by unclear hot spot position due to shielding of a metal layer during failure positioning.
Fig. 6 is a schematic flow chart of a method for preparing a semiconductor laser fault analysis sample according to an embodiment of the present application. The method may be applied TO the preparation of a sample for failure analysis of the semiconductor laser 200 shown in fig. 2, the semiconductor laser 200 may include a chip 210 and a TO holder 220, the chip 210 is fixed on the TO holder 220, as shown in fig. 6, the method may include the steps of:
s610, sealing and curing the semiconductor laser TO be analyzed through a curing agent, forming a sealing area by the curing agent and the TO support, and sealing the chip in the sealing area;
and S620, grinding the semiconductor laser to be analyzed after the sealing glue is solidified until the crystal back of the chip is exposed, and obtaining a semiconductor laser fault analysis sample.
In some embodiments, as shown in fig. 2, the TO holder 220 includes a die attach platform, and the chip is attached TO a side of the die attach platform; based on this, the step S620 can be specifically realized by the following steps:
and grinding the semiconductor laser to be analyzed after the sealing glue is solidified from the opposite side of the die bonding platform on which the chip is fixed until the back of the chip is exposed, thereby obtaining the ground semiconductor laser.
The step of grinding the semiconductor laser to be analyzed after the sealing glue is solidified from one side of the die bonding platform until the back of the chip is exposed to obtain the ground semiconductor laser can be specifically realized through the following steps:
step a), grinding the semiconductor laser to be analyzed after sealing glue solidification by using a grinding tool with first granularity from the opposite side of the die bonding platform fixed with the chip until the copper support of the die bonding platform is removed; the copper support may be referred to herein as a die bond platform.
Step b), using the grinding tool with the second granularity to continuously grind until the corner thinning starts to collapse, and using the grinding tool with the third granularity to continuously grind;
and c), correcting the residual metal, polishing by using a grinding tool with fourth granularity, and obtaining the ground semiconductor laser after polishing.
Wherein the first particle size is larger than the second particle size and larger than the third particle size and larger than the fourth particle size. For example, the first particle size is 180 mesh, the second particle size is 400 mesh, the third particle size is 2000 mesh, and the fourth particle size is 4000 mesh. The grinding steps are respectively the first step, the TO copper bracket is removed, and a 180-mesh grinding tool can be selected; removing the Si carrier plate, namely grinding by selecting 400 meshes, changing to 2000 meshes for continuous grinding when the corner thinning starts to collapse, and correcting the residual metal on the back of the sample; and thirdly, polishing the crystal back of the sample by using 4000 meshes of non-velvet cotton cloth with the thickness of 0.1 um.
In the embodiment of the present application, the method for preparing the semiconductor laser fault analysis sample may be applied to the method for analyzing the fault of the semiconductor laser shown in fig. 1, and related technical features may be mutually referred to for understanding and are not repeated.
Fig. 7 is a schematic structural diagram of a fault analysis system of a semiconductor laser according to an embodiment of the present application. The semiconductor laser includes a chip and a TO mount, the chip is fixed on the TO mount, as shown in fig. 7, the system may include:
the curing device 701 is used for sealing and curing the semiconductor laser TO be analyzed through a curing agent, wherein the curing agent and the TO support form a sealing area TO seal the chip in the sealing area;
the grinding device 702 is configured to grind the semiconductor laser device to be analyzed after the sealing compound is cured until the back of the chip is exposed, so as to obtain a ground semiconductor laser device;
and the analysis device 703 is used for performing hot spot positioning on the ground semiconductor laser based on the wafer back so as to perform failure analysis.
In some embodiments, the TO bracket includes a die attach platform, and the chip is fixed TO a side surface of the die attach platform; the grinding device 702 is specifically configured to:
and grinding the semiconductor laser to be analyzed after the sealing glue is solidified from the opposite side of the die bonding platform on which the chip is fixed until the back of the chip is exposed, thereby obtaining the ground semiconductor laser.
In some embodiments, the milling device 702 is specifically configured to:
grinding the semiconductor laser to be analyzed after the sealing glue is solidified by using a grinding tool with first granularity from the opposite side of the die bonding platform on which the chip is fixed until the copper support of the die bonding platform is removed;
using a grinding tool with the second granularity to continuously grind until the corner thinning starts to collapse, and using a grinding tool with the third granularity to continuously grind;
after correcting the residual metal, polishing by using a grinding tool with fourth granularity to obtain a ground semiconductor laser after polishing;
wherein the first particle size is greater than the second particle size is greater than the third particle size is greater than the fourth particle size.
In some embodiments, the first particle size is 180 mesh, the second particle size is 400 mesh, the third particle size is 2000 mesh, and the fourth particle size is 4000 mesh.
In some embodiments, further comprising: and the grinding analysis device is used for acquiring an image of the semiconductor laser to be analyzed after the sealing glue is solidified in the grinding process, and determining the grinding state through image identification, wherein the grinding state comprises a copper support removal completion state, a corner thinning starting collapse state, a residual metal state and the like.
Finally, it should be noted that: the above embodiments are only used for illustrating the technical solutions of the present application, and not for limiting the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present application.
Claims (3)
1. A fault analysis method of a semiconductor laser, wherein the semiconductor laser comprises a chip and a TO bracket, the chip is fixed on the TO bracket, and the method comprises the following steps:
performing horizontal surface glue sealing on a semiconductor laser TO be analyzed through a curing agent, wherein the curing agent and the TO bracket form a sealing area TO seal the chip in the sealing area;
grinding the semiconductor laser to be analyzed after the sealing glue is solidified until the crystal back of the chip is exposed to obtain a ground semiconductor laser;
carrying out hotspot positioning on the ground semiconductor laser based on the crystal back so as to carry out failure analysis;
the TO support comprises a die bonding platform, and the chip is fixed on the side face of the die bonding platform; the semiconductor laser to be analyzed after the sealing glue is solidified is ground until the crystal back of the chip is exposed, so that the ground semiconductor laser is obtained, and the method comprises the following steps:
grinding the semiconductor laser to be analyzed after the sealing glue is solidified by using a 180-mesh grinding tool from the opposite side of the die bonding platform on which the chip is fixed until the copper support of the die bonding platform is removed;
continuously grinding by using a grinding tool with 400 meshes to remove the silicon carrier until the corner thinning begins to collapse, continuously grinding by using a grinding tool with 2000 meshes to correct residual metal on the back of the sample;
after correcting the residual metal, polishing by using a 4000-mesh grinding tool and 0.1-micron lint-free cotton cloth to obtain a ground semiconductor laser after polishing; in the grinding process, the levelness of the semiconductor laser is controlled within one degree, and in the grinding process, when the grinding result is deviated from the expected result, a level meter and carborundum paper are used for determining and modifying;
the method comprises the steps that in the process of grinding a semiconductor laser device to be analyzed after sealing glue solidification, an image to be judged of the semiconductor laser device to be analyzed after the sealing glue solidification in grinding is obtained periodically or in a user triggering mode, wherein the image to be judged comprises a background, and the background and the semiconductor laser device to be analyzed after the sealing glue solidification have easily distinguishable chromatic aberration;
performing edge detection on the image to be judged, and determining the edge of the semiconductor laser to be analyzed after the sealing glue is cured, wherein the edge is the edge of the semiconductor laser to be analyzed after the background and the sealing glue are cured;
re-screening the detected edge based on a predetermined shape, and intercepting a target image based on the screened edge to obtain a target image of the semiconductor laser to be analyzed after sealing glue solidification, wherein the predetermined shape is related to the shape of the sealing glue model;
identifying a target image based on a pre-trained image classification model, and determining a grinding state of a semiconductor laser to be analyzed in the image to be judged, wherein the grinding state comprises a copper bracket removal completion state, a corner thinning starting collapse state and a residual metal state;
and giving a prompt of the next grinding action based on the preset corresponding relation between the grinding state and the next grinding action and the grinding state classification of the target image.
2. A preparation method of a semiconductor laser fault analysis sample is characterized in that a semiconductor laser comprises a chip and a TO support, wherein the chip is fixed on the TO support, and the method comprises the following steps:
sealing and curing the semiconductor laser TO be analyzed through a curing agent, wherein the curing agent and the TO support form a sealing area TO seal the chip in the sealing area;
grinding the semiconductor laser to be analyzed after the sealing glue is solidified until the crystal back of the chip is exposed to obtain a semiconductor laser fault analysis sample;
the TO support comprises a die bonding platform, and the chip is fixed on the side face of the die bonding platform; the semiconductor laser to be analyzed after the sealing glue is solidified is ground until the crystal back of the chip is exposed, so that the ground semiconductor laser is obtained, and the method comprises the following steps:
grinding the semiconductor laser to be analyzed after the sealing glue is solidified by using a 180-mesh grinding tool from the opposite side of the die bonding platform on which the chip is fixed until the copper support of the die bonding platform is removed;
continuously grinding by using a grinding tool with 400 meshes to remove the silicon carrier until the corner thinning begins to collapse, continuously grinding by using a grinding tool with 2000 meshes to correct residual metal on the back of the sample;
after correcting the residual metal, polishing by using a 4000-mesh grinding tool and 0.1-micron lint-free cotton cloth to obtain a ground semiconductor laser after polishing; in the grinding process, the levelness of the semiconductor laser is controlled within one degree, and in the grinding process, when the grinding result is deviated from the expected result, a level meter and carborundum paper are used for determining and modifying;
the method comprises the steps that in the process of grinding a semiconductor laser device to be analyzed after sealing glue solidification, an image to be judged of the semiconductor laser device to be analyzed after the sealing glue solidification in the grinding process is obtained periodically or in a user triggering mode, wherein the image to be judged comprises a background, and the background and the semiconductor laser device to be analyzed after the sealing glue solidification have distinguishable chromatic aberration;
performing edge detection on the image to be judged, and determining the edge of the semiconductor laser to be analyzed after sealing glue curing, wherein the edge is the edge of the semiconductor laser to be analyzed after background and sealing glue curing;
re-screening the detected edge based on a predetermined shape, and intercepting a target image based on the screened edge to obtain a target image of the semiconductor laser to be analyzed after sealing glue curing, wherein the predetermined shape is related to the shape of the sealing glue model;
identifying a target image based on a pre-trained image classification model, and determining a grinding state of a semiconductor laser to be analyzed in the image to be judged, wherein the grinding state comprises a copper bracket removal completion state, a corner thinning starting collapse state and a residual metal state;
and giving a prompt of the next grinding action based on the preset corresponding relation between the grinding state and the next grinding action and the classification of the grinding state of the target image.
3. The utility model provides a fault analysis system of semiconductor laser, its characterized in that, semiconductor laser includes chip and TO support, the chip is fixed on the TO support, the system includes:
the curing device is used for sealing and curing the semiconductor laser TO be analyzed through a curing agent, and the curing agent and the TO support form a sealing area TO seal the chip in the sealing area;
the grinding device is used for grinding the semiconductor laser to be analyzed after the sealing glue is solidified until the crystal back of the chip is exposed, so that the ground semiconductor laser is obtained;
the analysis device is used for carrying out hotspot positioning on the ground semiconductor laser based on the crystal back so as to carry out failure analysis;
the TO support comprises a die bonding platform, and the chip is fixed on the side face of the die bonding platform; the grinding device is also used for: grinding the semiconductor laser to be analyzed after the sealing glue is solidified by using a 180-mesh grinding tool from the opposite side of the die bonding platform on which the chip is fixed until the copper support of the die bonding platform is removed; continuously grinding by using a grinding tool with 400 meshes to remove the silicon carrier until the corner thinning begins to collapse, continuously grinding by using a grinding tool with 2000 meshes to correct residual metal on the back of the sample; after correcting the residual metal, polishing by using a 4000-mesh grinding tool and 0.1-micron lint-free cotton cloth to obtain a ground semiconductor laser after polishing; in the grinding process, the levelness of the semiconductor laser is controlled within one degree, and in the grinding process, when the grinding result is deviated from the expected result, a level meter and carborundum paper are used for determining and modifying;
the method comprises the steps that in the process of grinding a semiconductor laser device to be analyzed after sealing glue solidification, an image to be judged of the semiconductor laser device to be analyzed after the sealing glue solidification in grinding is obtained periodically or in a user triggering mode, wherein the image to be judged comprises a background, and the background and the semiconductor laser device to be analyzed after the sealing glue solidification have easily distinguishable chromatic aberration;
performing edge detection on the image to be judged, and determining the edge of the semiconductor laser to be analyzed after sealing glue curing, wherein the edge is the edge of the semiconductor laser to be analyzed after background and sealing glue curing;
re-screening the detected edge based on a predetermined shape, and intercepting a target image based on the screened edge to obtain a target image of the semiconductor laser to be analyzed after sealing glue curing, wherein the predetermined shape is related to the shape of the sealing glue model;
identifying a target image based on a pre-trained image classification model, and determining a grinding state of a semiconductor laser to be analyzed in the image to be judged, wherein the grinding state comprises a copper bracket removal completion state, a corner thinning starting collapse state and a residual metal state;
and giving a prompt of the next grinding action based on the preset corresponding relation between the grinding state and the next grinding action and the grinding state classification of the target image.
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