CN204450180U - A kind of sample lapping aid - Google Patents
A kind of sample lapping aid Download PDFInfo
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- CN204450180U CN204450180U CN201520025317.0U CN201520025317U CN204450180U CN 204450180 U CN204450180 U CN 204450180U CN 201520025317 U CN201520025317 U CN 201520025317U CN 204450180 U CN204450180 U CN 204450180U
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- sample
- servicing unit
- ground
- groove
- film
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Abstract
The utility model provides a kind of sample lapping aid, comprising: substrate, successively superposition are formed at some layer films of described substrate top surface; And for the groove of accommodating ground sample, described groove runs through described substrate and all described films.This servicing unit is applicable to the Product Failure Analysis of 28 nm and following advanced process, the sample that will grind is pasted onto in groove, make sample surfaces and servicing unit surface in same level, in process of lapping, just can judge to be ground to which layer exactly by the pattern on observation by light microscope servicing unit, greatly save the time of de-electromation microscope confirmation repeatedly, it also avoid electron microscope and repeatedly irradiate the injury that sample is caused.Meanwhile, because sample is placed on the central authorities of servicing unit, the planarization ground just can be judged by the layer observing servicing unit all around four direction place, thus the dynamics of adjustment grinding in time, the large-scale planarization of guarantee sample.
Description
Technical field
The utility model belongs to field of semiconductor manufacture, relates to a kind of sample lapping aid.
Background technology
When chip carries out failure analysis, very important method is exactly do hand-ground successively and electron microscopic observation to the surface of sample, finds level and the basic reason of inefficacy.Sample for below 28nm can run into very large difficulty when doing hand-ground successively, success rate is lower, main cause is the sample inter-metal (inner layer metal) of below 28nm processing procedure and the thickness too thin (50nm ± 30nm) of inter-via (internal layer through hole), and the number of plies of metal wire many (a lot of product >=10 layer).Also be accurately parked in one deck (such as M3) just becomes very difficult to such hand-ground: one is because every layer all very thin, so be easy to honed, confirm under needing repeatedly de-electromation microscope, and electron beam scanning repeatedly can bring injury (light microscope cannot differentiate the metal line pattern of advanced process sample) to sample; Two is that very little area inside gradient is very large, some positions at M3, some positions at M2, even M1.
Following two kinds of methods are had to solve following problem at present:
1. direct hand-ground sample: by sample hand-ground, easily honed and gradient large, repeatedly confirm Layer (layer) under needing Electronic Speculum;
2. time the area of position to be analyzed less (20um × below 20um), as shown in Figures 1 and 2, be shown as the schematic diagram of the sample of primary sample and FIB process respectively, centered by position 1 to be analyzed, with focused particle beam microscope (FIB), its perimeter etch is gone out a circle groove 2, and fill up metal (as W or Pt) wherein, and then grind, under the encirclement of metal, position to be analyzed grinding rate can relatively slowly with smooth.But this method is very consuming time, costly, if position to be analyzed area is when 30um × more than 30um, be not easy operation.
Therefore, provide a kind of sample lapping aid to meet the failure analysis of fine structure sample, particularly 28nm and following product, become the technical problem that those skilled in the art are urgently to be resolved hurrily.
Utility model content
The shortcoming of prior art in view of the above, the purpose of this utility model is to provide a kind of sample lapping aid, for solving the failure analysis for fine structure product in prior art, accurately cannot be ground to the level of needs during sample preparation and ensure planarization on a large scale, and sample irradiates the flimsy problem of appearance repeatedly through electron microscope.
For achieving the above object and other relevant objects, the utility model provides a kind of sample lapping aid, and described sample lapping aid comprises:
Substrate;
Some layer films, superposition is formed at described substrate top surface successively;
For the groove of accommodating ground sample, described groove runs through described substrate and all described films.
Alternatively, described substrate is square.
Alternatively, the length of side of described substrate is 0.5 ~ 2cm.
Alternatively, described groove is square, and is positioned at described substrate and film central authorities.
Alternatively, the length of side of described groove is 1/3 ~ 2/3 of the described substrate length of side.
Alternatively, the length of side of described groove is 1/2 of the described substrate length of side.
Alternatively, the thickness of every thin film is identical.
Alternatively, the thickness of described film is 100nm.
Alternatively, the number of plies of described film is more than or equal to 100.
Alternatively, the figure in every thin film is all different.
Alternatively, described figure comprises at least one in Arabic numerals, English capitalization and English less letter.
Alternatively, the material of described film is silica, and the material of described figure is copper.
As mentioned above, sample lapping aid of the present utility model, there is following beneficial effect: sample lapping aid of the present utility model is applicable to the Product Failure Analysis of 28nm and following advanced process, the sample preparation that will grind must be slightly more a little bit smaller than servicing unit central authorities groove, and sample is pasted onto in groove, make sample surfaces and servicing unit surface in same level, in process of lapping, just can judge to be ground to which layer exactly by the pattern on observation by light microscope servicing unit, greatly save the time of de-electromation microscope confirmation repeatedly, it also avoid electron microscope and repeatedly irradiate the injury that sample is caused.Meanwhile, because sample is placed on the central authorities of servicing unit, the planarization ground just can be judged by the layer observing servicing unit all around four direction place, thus the dynamics of adjustment grinding in time, the large-scale planarization of guarantee sample.
Accompanying drawing explanation
Fig. 1 is shown as the schematic diagram of primary sample in prior art.
Fig. 2 is shown as the schematic diagram of the sample of FIB process in prior art.
Fig. 3 is shown as the stereogram of sample lapping aid of the present utility model.
Fig. 4 is shown as the profile of sample lapping aid of the present utility model.
Fig. 5 is shown as decomposing schematic representation ground sample being put into sample lapping aid of the present utility model.
Fig. 6 is shown as profile ground sample being put into sample lapping aid of the present utility model.
Fig. 7 is shown as schematic diagram when being ground to layer 6 film.
Fig. 8 is shown as schematic diagram during abradant surface out-of-flatness.
Fig. 9 be shown as abradant surface smooth time schematic diagram.
Element numbers explanation
1 position to be analyzed
2 grooves
3 substrates
4,4001 ~ 4100 films
5 grooves
6 ground samples
7 PURs
8 the first metal layers
9 second metal levels
10 the 3rd metal levels
Detailed description of the invention
By particular specific embodiment, embodiment of the present utility model is described below, person skilled in the art scholar the content disclosed by this description can understand other advantages of the present utility model and effect easily.
Refer to Fig. 3 to Fig. 9.Notice, structure, ratio, size etc. that this description institute accompanying drawings illustrates, content all only in order to coordinate description to disclose, understand for person skilled in the art scholar and read, and be not used to limit the enforceable qualifications of the utility model, therefore the not technical essential meaning of tool, the adjustment of the modification of any structure, the change of proportionate relationship or size, do not affecting under effect that the utility model can produce and the object that can reach, still all should drop on technology contents that the utility model discloses and obtain in the scope that can contain.Simultaneously, quote in this description as " on ", D score, "left", "right", " centre " and " one " etc. term, also only for ease of understanding of describing, and be not used to limit the enforceable scope of the utility model, the change of its relativeness or adjustment, under changing technology contents without essence, when being also considered as the enforceable category of the utility model.
The utility model provides a kind of sample lapping aid, refers to Fig. 3 and Fig. 4, is shown as stereogram and the sectional view of this servicing unit respectively, and described sample lapping aid comprises:
Substrate 3;
Some layer films 4, superposition is formed at described substrate 3 upper surface successively;
For the groove 5 of accommodating ground sample, described groove 5 runs through described substrate 3 and all described films 4.
Concrete, the number of plies of described film 4 is more than or equal to 100, in the present embodiment, described sample lapping aid is to comprise 100 layer films, as shown in Figure 2, film 4001, film 4002, film 4003, film 4004, film 4005, film 4006, film 4007, film 4008 is followed successively by from top to bottom ..., film 4099 and film 4100.
In the present embodiment, the thickness of every thin film is preferably identical, is convenient to calculate grinding thickness according to the film number of plies.In the present embodiment, the thickness of every thin film is preferably 100nm, both the thickness (inner layer metal of such as below 28nm processing procedure sample and the thickness range of internal layer through hole are about 50nm ± 30nm) of the every one deck of ground sample had been matched with, be similar to scale again, be convenient to bluntly estimate grinding thickness.Certainly, in other embodiments, the thickness of described film also can adopt other numerical value, should too not limit protection domain of the present utility model herein.
Concrete, figure in every thin film is all different, thus in process of lapping, just can judge to be ground to which layer exactly by the pattern on observation by light microscope servicing unit, greatly save the time of de-electromation microscope confirmation repeatedly, it also avoid electron microscope and repeatedly irradiate the injury that sample is caused.
Described figure include but not limited to Arabic numerals (1,2,3,4 ...), English capitalization (A, B, C, D ...) and English less letter (a, b, c, d ...) etc.Exemplarily, the material of described film is silica, and the material of described figure is copper.Described figure obtains by conventional semiconductor process such as photoetching, development, etching, plated metal, chemically mechanical polishings.
Exemplarily, described substrate 3 is square, and the side size range of described substrate 3 is 0.5 ~ 2cm.In the present embodiment, the length of side of described substrate is preferably 1cm.Certainly in other embodiments, described substrate can be also other shape, as pentagon, hexagon etc., as long as be convenient to fixing, should too not limit protection domain of the present utility model herein.
In the present embodiment, with the mating shapes of described substrate 3, described groove 5 is also square, and the four edges of described groove 5 is parallel with the four edges of described substrate respectively.Described groove 5 is preferably positioned at described substrate 3 and film 4 central authorities, the uniformity be distributed with when being beneficial to ground sample symmetrical like this.
Concrete, the length of side of described groove 5 is 1/3 ~ 2/3 of described substrate 3 length of side, and in the present embodiment, the length of side of described groove 5 is preferably for described substrate 3 length of side 1/2, i.e. 5mm.
The using method of sample lapping aid of the present utility model is as follows:
First, ground sample 6 is prepared into slightly more a little bit smaller than described groove 5, then described ground sample 6 is pasted onto in described groove 5, make the surface of the surface of ground sample 6 and sample lapping aid in same level.
Refer to Fig. 5 and be shown as decomposing schematic representation ground sample 6 being put into sample lapping aid.Refer to Fig. 6, be shown as profile ground sample being put into sample lapping aid, wherein, ground sample is fixed on described servicing unit by PUR 7.
Concrete, described servicing unit and described ground sample are tipped upside down on a fully-flattened (as slide etc.), with the upper surface of the upper surface and described ground sample that ensure described servicing unit in same level, then PUR 7 is coated at described ground sample 6 and the described servicing unit back side, and cooling makes described PUR 7 solidify, thus described ground sample is fixed on described servicing unit by PUR 7 stickup.
Then, the servicing unit pasting ground sample is turned and is fixed on grinding table, grinding can be started.
Because the film thickness that each figure on described servicing unit is corresponding is known, so just mill can be accurately calculated according to the film pattern around described groove 5 when ground sample go down how many, thus infer which layer the ground sample in the middle of described servicing unit has been ground to, greatly save the time of de-electromation microscope confirmation repeatedly, it also avoid electron microscope and repeatedly irradiate the injury that sample is caused.
The internal structure of described ground sample 6 is had nothing in common with each other according to the chip type and position that will carry out failure analysis, and exemplarily, as shown in Figure 6, described ground sample comprises the first metal layer 8, second metal level 9 and the 3rd metal level 10.As shown in Figure 7, when observing described servicing unit process to layer 6 film 4006 under light microscope (OM), due to the known thickness will analyzing every one deck of sample, at this moment just can know that sample is treated above the second metal level 9, the bottom of through hole.
Further, because ground sample has been placed on the centre of described servicing unit, the planarization of grinding just can be judged by the thin layer observing servicing unit all around four direction place, if the dynamics that out-of-flatness just can adjust grinding makes servicing unit all around all at same layer film, the ground sample of such centre just can ensure large-scale planarization, and this has very large help to the preparation of 28nm and following processing procedure sample.
Refer to Fig. 8, be shown as schematic diagram during abradant surface out-of-flatness, wherein, subregion is ground to four-level membrane 4004, and subregion is ground to layer 6 film 4006.Refer to Fig. 9, be shown as adjustment grinding dynamics and must obtain the smooth schematic diagram of abradant surface, wherein, servicing unit is all ground to layer 6 film 4006 all around.
Above, by the help of sample lapping aid of the present utility model, the thickness grinding can be known exactly, thus be parked in the level needing to observe in time, large-scale planarization can be ensured simultaneously, improve the preparation efficiency of the sample of 28nm and following processing procedure failure analysis.
In sum, sample lapping aid of the present utility model is applicable to the Product Failure Analysis of 28nm and following advanced process, the sample preparation that will grind must be slightly more a little bit smaller than servicing unit central authorities groove, and sample is pasted onto in groove, make sample surfaces and servicing unit surface in same level, in process of lapping, just can judge to be ground to which layer exactly by the pattern on observation by light microscope servicing unit, greatly save the time of de-electromation microscope confirmation repeatedly, it also avoid electron microscope and repeatedly irradiate the injury that sample is caused.Meanwhile, because sample is placed on the central authorities of servicing unit, the planarization ground just can be judged by the layer observing servicing unit all around four direction place, thus the dynamics of adjustment grinding in time, the large-scale planarization of guarantee sample.So the utility model effectively overcomes various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present utility model and effect thereof only, but not for limiting the utility model.Any person skilled in the art scholar all without prejudice under spirit of the present utility model and category, can modify above-described embodiment or changes.Therefore, such as have in art and usually know that the knowledgeable modifies or changes not departing from all equivalences completed under the spirit and technological thought that the utility model discloses, must be contained by claim of the present utility model.
Claims (12)
1. a sample lapping aid, is characterized in that, described sample lapping aid comprises:
Substrate;
Some layer films, superposition is formed at described substrate top surface successively;
For the groove of accommodating ground sample, described groove runs through described substrate and all described films.
2. sample lapping aid according to claim 1, is characterized in that: described substrate is square.
3. sample lapping aid according to claim 2, is characterized in that: the length of side of described substrate is 0.5 ~ 2cm.
4. sample lapping aid according to claim 2, is characterized in that: described groove is square, and is positioned at described substrate and film central authorities.
5. sample lapping aid according to claim 4, is characterized in that: the length of side of described groove is 1/3 ~ 2/3 of the described substrate length of side.
6. sample lapping aid according to claim 4, is characterized in that: the length of side of described groove is 1/2 of the described substrate length of side.
7. sample lapping aid according to claim 1, is characterized in that: the thickness of every thin film is identical.
8. sample lapping aid according to claim 7, is characterized in that: the thickness of described film is 100nm.
9. sample lapping aid according to claim 1, is characterized in that: the number of plies of described film is more than or equal to 100.
10. sample lapping aid according to claim 1, is characterized in that: the figure in every thin film is all different.
11. sample lapping aids according to claim 10, is characterized in that: described figure comprises at least one in Arabic numerals, English capitalization and English less letter.
12. sample lapping aids according to claim 10, is characterized in that: the material of described film is silica, and the material of described figure is copper.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520025317.0U CN204450180U (en) | 2015-01-14 | 2015-01-14 | A kind of sample lapping aid |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520025317.0U CN204450180U (en) | 2015-01-14 | 2015-01-14 | A kind of sample lapping aid |
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| Publication Number | Publication Date |
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| CN204450180U true CN204450180U (en) | 2015-07-08 |
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| CN201520025317.0U Expired - Fee Related CN204450180U (en) | 2015-01-14 | 2015-01-14 | A kind of sample lapping aid |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106971952A (en) * | 2016-01-13 | 2017-07-21 | 中芯国际集成电路制造（天津）有限公司 | Semiconductor device failure analysis sample and preparation method thereof, failure analysis method |
| CN108020774A (en) * | 2017-11-30 | 2018-05-11 | 上海华力微电子有限公司 | Small sample removes layer method and mould |
| CN111081623A (en) * | 2019-11-30 | 2020-04-28 | 闳康技术检测(上海)有限公司 | Preparation method of crystal back of ultrathin chip |
| CN111834273B (en) * | 2020-07-23 | 2021-04-13 | 长江存储科技有限责任公司 | Positioning method and positioning device for target position of semiconductor chip sample |
| CN114252319A (en) * | 2022-03-01 | 2022-03-29 | 江山季丰电子科技有限公司 | Fault analysis method of semiconductor laser, preparation method of sample and system |
-
2015
- 2015-01-14 CN CN201520025317.0U patent/CN204450180U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106971952A (en) * | 2016-01-13 | 2017-07-21 | 中芯国际集成电路制造（天津）有限公司 | Semiconductor device failure analysis sample and preparation method thereof, failure analysis method |
| CN106971952B (en) * | 2016-01-13 | 2019-08-27 | 中芯国际集成电路制造（天津）有限公司 | Semiconductor device failure analyzes sample and preparation method thereof, failure analysis method |
| CN108020774A (en) * | 2017-11-30 | 2018-05-11 | 上海华力微电子有限公司 | Small sample removes layer method and mould |
| CN111081623A (en) * | 2019-11-30 | 2020-04-28 | 闳康技术检测(上海)有限公司 | Preparation method of crystal back of ultrathin chip |
| CN111834273B (en) * | 2020-07-23 | 2021-04-13 | 长江存储科技有限责任公司 | Positioning method and positioning device for target position of semiconductor chip sample |
| CN114252319A (en) * | 2022-03-01 | 2022-03-29 | 江山季丰电子科技有限公司 | Fault analysis method of semiconductor laser, preparation method of sample and system |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150708 Termination date: 20190114 |
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| CF01 | Termination of patent right due to non-payment of annual fee |