CN111341684A - Characterization method for quality of aluminum bonding pad in semiconductor wafer manufacturing - Google Patents
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Abstract
The invention relates to the technical field of semiconductors, in particular to a characterization method of the quality of an aluminum bonding pad in the manufacturing of a semiconductor wafer, which is used for detecting the aluminum bonding pad of the wafer in the following aspects: observing the defects and the color change condition of the aluminum bonding pad by an optical microscope; analyzing the defects of the aluminum bonding pad by a scanning electron microscope; auger electron spectroscopy analyzes the pollution level on the aluminum bonding pad; analyzing the thickness of the aluminum oxide on the aluminum bonding pad by using a transmission electron microscope; and if all the aluminum pads are qualified, the quality of the aluminum pads is qualified. The method for characterizing the quality of the aluminum bonding pad in the semiconductor wafer manufacturing process provided by the invention is used for detecting the quality of the aluminum bonding pad on the semiconductor wafer by jointly applying the optical microscope, the scanning electron microscope, the Auger electron spectroscopy and the transmission electron microscope, and if all detection results meet the preset standard, the quality of the aluminum bonding pad on the wafer is qualified, thereby providing good technical support for the subsequent function exertion of the aluminum bonding pad.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a characterization method of aluminum bonding pad quality in semiconductor wafer manufacturing.
Background
In semiconductor wafer fabrication, quality control of aluminum pads in back-end-of-line processes is very important. The yield of the semiconductor wafer manufacturing reaches the highest level in a wafer factory, but as long as the quality of the aluminum bonding pad on the wafer is not good, the wire bonding cannot be carried out until the packaging factory packages, and the comprehensive yield after packaging is equal to zero. Sampling is required to perform quality characterization and failure analysis of the aluminum pads on the wafer, both before shipment to the fab and before shipment to the package tester.
However, there is no perfect comprehensive detection method in this aspect in the semiconductor industry.
Disclosure of Invention
The invention provides a characterization method of the quality of an aluminum bonding pad in semiconductor wafer manufacturing, which combines an optical microscope, a scanning electron microscope, an Auger electron spectroscopy and a transmission electron microscope to perform characterization and failure analysis on the quality of the aluminum bonding pad on a semiconductor wafer. If all the characterization/analysis results meet the predetermined standard requirements, the quality of the aluminum pads on the wafer can be guaranteed to be qualified, safe and high-yield in a series of package test process treatments performed later.
Specifically, the invention provides a characterization method of the quality of an aluminum bonding pad in semiconductor wafer manufacturing, which is used for comprehensively detecting the aluminum bonding pad of the wafer in the following aspects:
observing the defects and the color change condition of the aluminum bonding pad by using an optical microscope;
analyzing the defects of the aluminum bonding pad by a scanning electron microscope;
auger electron spectroscopy analyzing a contamination level on the aluminum pad;
analyzing the thickness of the aluminum oxide on the aluminum bonding pad by using a transmission electron microscope;
and if all the aluminum pads are qualified, the quality of the aluminum pads is qualified.
The method for characterizing the quality of the aluminum bonding pad in the semiconductor wafer manufacturing process provided by the invention is used for detecting the quality of the aluminum bonding pad on the semiconductor wafer by jointly applying the optical microscope, the scanning electron microscope, the Auger electron spectroscopy and the transmission electron microscope, and if all detection results meet the preset standard, the quality of the aluminum bonding pad on the wafer is qualified, thereby providing good technical support for the subsequent function exertion of the aluminum bonding pad.
The invention provides a method for characterizing the quality of an aluminum bonding pad in the manufacture of a semiconductor wafer, wherein detection items of the aluminum bonding pad of the wafer can be carried out in a certain sequence or can be carried out respectively and simultaneously. In the process of proceeding according to a certain sequence, the sequence of the detection items can be performed according to the requirements of the actual situation, and can also be performed according to a specific sequence.
In some possible embodiments, the following tests are sequentially performed on the aluminum pads of the wafer:
observing the defects and the color change condition of the aluminum bonding pad by using an optical microscope;
analyzing the defects of the aluminum bonding pad by a scanning electron microscope;
auger electron spectroscopy analyzing a contamination level on the aluminum pad;
the thickness of the aluminum oxide on the aluminum pad was analyzed by transmission electron microscopy.
In the detection process, the aluminum bonding pads of the wafer are detected according to the sequence, the detection process is simple to complex, the defective products can be removed as soon as possible, the detection cost is reduced, and the detection efficiency is improved.
The condition of the aluminum bonding pad on the whole bare die or even the whole wafer can be quickly known through observation of an optical microscope. The observation of an optical microscope mainly finds the obvious defects and discoloration of the aluminum bonding pad.
For better optical microscopy purposes, in some possible embodiments, the optical microscopy magnification is 5 times or more.
As in some possible embodiments, the magnification of the light microscopy may be 5 times, 10 times, 25 times, 40 times, 100 times, and so forth.
In some possible embodiments, the observation of the optical microscope is at a magnification of 5 and 100.
The observation of the optical microscope with lower multiple and the observation of the optical microscope with higher multiple can well meet the condition of observing the more obvious defects and discoloration of the aluminum bonding pad.
Scanning electron microscope observation is the most common equipment and means in failure analysis, and in order to ensure the quality of the aluminum bonding pad, observation is carried out under a certain magnification.
In some possible embodiments, the scanning electron microscopy analysis uses a magnification of 25K or more.
Since at low magnification some subtle defects and anomalies may be missed.
In some possible embodiments, the scanning electron microscopy analysis uses a magnification of 25K to 150K.
In some possible embodiments, the scanning electron microscopy analysis uses magnifications of 25K, 50K, 100K and 150K.
The scanning electron microscope with different magnification is selected to observe the aluminum bonding pad, so that fine defects and abnormalities can be effectively identified.
The results of the Auger electron spectroscopy analysis on the aluminum bonding pad show that the pollution level on the aluminum bonding pad is mainly the content of fluorine element and carbon element.
In some possible embodiments, the contamination level is measured as the content of both carbon and fluorine elements using auger electron spectroscopy.
The invention deeply understands the mechanism of fluorine and carbon pollution on the aluminum bonding pad and the quality control limit/specification limit of the fluorine and carbon pollution on the aluminum bonding pad by Auger electron spectroscopy analysis through research, and establishes the control limit of the fluorine and carbon pollution on the aluminum bonding pad.
In some possible embodiments, the atomic number percentage of carbon is less than 30.0 at% and the atomic number percentage of fluorine is less than 5.0 at% in the auger electron spectroscopy acceptance state;
and analyzing a 5nm sputtering state by Auger electron spectroscopy, wherein the atomic number percentage of the carbon is 0.0 at%, and the atomic number percentage of the fluorine is 0.0 at%.
As in some embodiments, a qualified aluminum pad may have a percentage atomic number of carbon of 5 at%, 8 at%, 10 at%, 15 at%, 18 at%, 20 at%, 25 at%, 27 at%, 28 at%, 29 at%, etc., and a percentage atomic number of fluorine of 1.0 at%, 1.5 at%, 2.0 at%, 2.5 at%, 3.0 at%, 3.5 at%, 4.0 at%, 4.5 at%, 4.8 at%, etc., when in the receiving state.
During the detection process, the aluminum pad is monitored to be qualified only when the two sets of results of the receiving state and the 5nm sputtering state are within the control limit. Conversely, if there is only one runaway (OOC) result from the receiving condition and the 5nm sputtering condition, the sample is deemed to be failing to monitor.
The thickness of the alumina on the aluminum pad is important because it can act as a protective layer to prevent corrosion effects on the aluminum pad, especially during die cutting of the wafer. It was found by investigation that the alumina thickness on a normal aluminum pad should be around 5nm as analyzed by transmission electron microscopy.
In some possible embodiments, the alumina thickness is 5.0 ± 0.2 nm.
Compared with the prior art, the invention at least has the following beneficial effects:
(1) the invention provides a failure analysis method for an aluminum bonding pad, which is used for characterizing and analyzing the quality of the aluminum bonding pad on a semiconductor wafer by jointly applying an optical microscope, a scanning electron microscope, an Auger electron spectroscopy and a transmission electron microscope.
(2) If all the characterization/analysis results meet the predetermined standard requirements, it is indicated that the quality of the aluminum pads on the wafer is good, safe and high-yield in a series of package test process treatments performed later.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
FIG. 1 is an optical microscope observation view showing discoloration of an aluminum pad provided by an embodiment of the present invention;
FIG. 2 shows an optical microscope observation of a qualified aluminum pad provided by an embodiment of the present invention;
FIG. 3 is a scanning electron microscope image of defects caused by fluorine etching on an aluminum pad according to an embodiment of the present invention;
FIG. 4 shows a scanning electron microscope image of a qualified aluminum pad provided by an embodiment of the present invention;
FIG. 5 is a scanning electron microscope image of a qualified aluminum pad provided by an embodiment of the present invention;
FIG. 6 is an Auger electron spectroscopy analysis of the acceptance state of a qualified aluminum pad provided by an embodiment of the present invention;
FIG. 7 shows an Auger electron spectroscopy analysis of a 5nm sputtered state of a qualified aluminum pad provided by an embodiment of the present invention;
fig. 8 shows a transmission electron microscope image of the alumina thickness of a qualified aluminum pad provided by an embodiment of the present invention.
Detailed Description
In order that the above objects, features and advantages of the present invention can be more clearly understood, a more particular description of the invention will be rendered by reference to the appended drawings. It should be noted that the embodiments and features of the embodiments of the present application may be combined with each other without conflict.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, however, the present invention may be practiced in other ways than those specifically described herein, and therefore the scope of the present invention is not limited to the specific embodiments disclosed below.
What are the aluminum pads of the wafer count as high quality aluminum pads? The inventor of the present invention has found for a long time that the aluminum pads of the wafer must not have any contaminants or corrosion defects and discoloration effects caused by contaminants.
In order to achieve and realize the point, the invention provides a characterization and failure analysis method of the quality of an aluminum bonding pad in the semiconductor wafer manufacturing, called OSAT for short, which is used for characterizing and failure analysis of the quality of the aluminum bonding pad on the semiconductor wafer by combining an optical microscope (O), a scanning electron microscope (S), an Auger electron spectrum (A) and a transmission electron microscope (T) so as to ensure the quality of the aluminum bonding pad on the semiconductor wafer.
Specifically, the flow of the method for characterizing the quality of the aluminum bonding pad and analyzing the failure in the semiconductor wafer manufacturing process provided by the invention is as follows:
observation with an Optical microscope (Optical Microcopy-OM) → analysis with a scanning Electron microscope (Scanning Electron Microcopy-SEM) → analysis with an Auger Electron Spectroscopy-AES → analysis with a Transmission Electron microscope (Transmission Electron Microcopy-TEM).
Wherein, the requirements and control values of the OSAT analysis result are as follows:
and O, an Optical Microscope (OM), wherein under the observation of the OM, any defect and discoloration can not be seen on the aluminum pad.
S Scanning Electron Microscope (SEM), under different magnifications (25K, 50K, 100K and 150K) SEM, no defect or abnormality can be seen on the aluminum pad.
Auger Electron Spectroscopy (AES), AES analysis results showed that the contamination level on the aluminum pads (particularly fluorine and carbon) was below the quality control limit/specification limit.
And T is a Transmission Electron Microscope (TEM), and the TEM analysis result shows that the thickness of the aluminum oxide on the aluminum pad is about a quality control value (5 nanometers).
1. Optical Microscope (OM) observation
OM observation magnification: 5 times and 100 times respectively;
OM looks to see the aluminum pads across the die or even across the wafer.
Defects and aluminum pad discoloration should not be visible on the aluminum pads under OM observation. Typically, a good aluminum pad should appear white or colorless when viewed under OM.
An example of discoloration of an aluminum pad is shown in fig. 1.
FIG. 1 shows: discoloration of the aluminum pads has been known by OM observation. The discoloration is due to a number of factors, typically incomplete etching, residual glue, and less than optimal processing associated with aluminum pads. The discoloration of the aluminum pad shown in fig. 1 was analyzed by Auger and was due to incomplete etching of the TIN layer by the back end of wafer processing.
An optical microscope image of a qualified aluminum pad is shown in fig. 2.
2. S Scanning Electron Microscope (SEM) Observation
SEM observation is the most common apparatus and means in failure analysis.
In order to ensure the quality of the aluminum pads, observations were made at different high magnifications (25K, 50K, 100K and 150K). Since at low magnification some subtle defects and anomalies may be missed.
For example, in FIG. 3, the defects due to etching by three fluorine species in FIGS. a, b, and c are easily observed under SEM, but the defects in d must be observed under high magnification.
Fig. 4 shows SEM pictures of normal aluminum pads observed under 25K and 150K magnification conditions.
Fig. 5 also shows the SEM picture of a normal aluminum pad observed under 150K magnification.
3. Auger Electron Spectroscopy (AES) analysis
AES analysis results showed contamination levels (particularly fluorine and carbon) on the aluminum pads.
The mechanism of fluorine and carbon contamination on aluminum pads and their quality control/specification limits when analyzed by AES on aluminum pads are well understood by study.
The specification limit is not dependent on the wafer process, but only on the quality impact of fluorine contamination on the aluminum pads. Research finds that the industrial specification limit of fluorine pollution on the aluminum bonding pad is as follows:
f: less than 6.0 at% "reception state" (0nm)
C: less than 30.0 at% "reception state" (0nm)
F: 0.0 at% "5 nm sputtering state" (5nm)
C: 0.0 at% "5 nm sputtering state" (5nm)
With numerous sample analyses and 3 sigma calculations, a control limit for fluorine and carbon contamination on the aluminum pads was established as:
f: less than 5.0 at% "reception state" (0nm)
C: less than 30.0 at% "reception state" (0nm)
F: 0.0 at% "5 nm sputtering state" (5nm)
C: 0.0 at% "5 nm sputtering state" (5nm)
The aluminum pad is only "qualified" for monitoring when both sets of results for "receiving state" and "5 nm sputtering state" are within control limits.
Conversely, if there is only one runaway (OOC) from the results of the "receiving condition" and the "5 nm sputtering condition", the sample is deemed to be monitored "failed".
Fig. 6 and 7 show the results of auger electron spectroscopy analysis of a normal aluminum pad. Specific results are shown in table 1.
TABLE 1 Auger electron spectroscopy analysis results
Note: "-" indicates no detection.
The auger electron spectroscopy analysis results of fig. 6 and 7 show that the aluminum pad is a normal aluminum pad because both sets of results for the "receiving state" and the "5 nm sputtering state" are within the control limits: 1.4 at% of F, less than 5.0 at%; 28.7 at% and less than 30.0 at% of C; neither F nor C "5 nm sputter state" was detected, i.e., both F and C "5 nm sputter state" were equal to zero. It can be seen that both sets of results for the "receiving state" and the "5 nm sputtering state" are within the control limits.
4. Transmission Electron Microscope (TEM) analysis
The thickness of the alumina on the aluminum pad is important because it acts as a protective layer to prevent galvanic corrosion effects on the aluminum pad. Especially when dicing bare wafers.
It was found by study that the alumina thickness on a normal aluminum pad should be around 5nm by TEM analysis (fig. 8). And the thickness of the aluminum oxide on the aluminum pad is not good if it is too thick or too thin.
Therefore, the aluminum bonding pad in the semiconductor wafer manufacturing meets the following conditions after being detected:
optical Microscope (OM): no defect and no color change are generated on the aluminum bonding pad;
scanning Electron Microscope (SEM): defects and anomalies cannot be seen on the aluminum pad;
auger Electron Spectroscopy (AES): the pollution on the aluminum bonding pad is less than the control limit;
transmission Electron Microscope (TEM): the thickness of the aluminum oxide on the aluminum bonding pad is uniform to about 5 nanometers;
in the present invention, the term "plurality" means two or more unless explicitly defined otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the description of the present specification, the description of the terms "some possible implementations" or the like means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. The characterization method of the quality of the aluminum bonding pad in the semiconductor wafer manufacturing is characterized in that the following detection is carried out on the aluminum bonding pad of the wafer:
observing the defects and the color change condition of the aluminum bonding pad by using an optical microscope;
analyzing the defects of the aluminum bonding pad by a scanning electron microscope;
auger electron spectroscopy analyzing a contamination level on the aluminum pad;
analyzing the thickness of the aluminum oxide on the aluminum bonding pad by using a transmission electron microscope;
and if all the aluminum pads are qualified, the quality of the aluminum pads is qualified.
2. The method for characterizing the quality of the aluminum bonding pad in the semiconductor wafer manufacturing process as claimed in claim 1, wherein the aluminum bonding pad of the wafer is sequentially tested by the following steps:
observing the defects and the color change condition of the aluminum bonding pad by using an optical microscope;
analyzing the defects of the aluminum bonding pad by a scanning electron microscope;
auger electron spectroscopy analyzing a contamination level on the aluminum pad;
the thickness of the aluminum oxide on the aluminum pad was analyzed by transmission electron microscopy.
3. The method for characterizing the quality of an aluminum bonding pad in the manufacture of semiconductor wafers as claimed in any one of claims 1-2, wherein the magnification of the observation by the optical microscope is 5 times or more.
4. The method as claimed in claim 3, wherein the observation magnification of the optical microscope is 5 times and 100 times.
5. The method for characterizing the quality of an aluminum bonding pad in the manufacture of semiconductor wafers as claimed in any one of claims 1-2, wherein the scanning electron microscope analysis is performed at a magnification of 25K or more.
6. The method as claimed in claim 5, wherein the scanning electron microscope analysis is performed at a magnification of 25K-150K.
7. The method as claimed in claim 5, wherein the scanning electron microscope analysis is performed at 25K, 50K, 100K and 150K magnification.
8. A method for characterizing the quality of an aluminum bonding pad in the manufacture of semiconductor wafers as claimed in any one of claims 1-2, wherein the contamination level on the aluminum bonding pad is measured by the contents of both carbon and fluorine elements using Auger electron spectroscopy.
9. A method for characterizing aluminum pad quality in semiconductor wafer fabrication as recited in claim 8, wherein, in Auger electron spectroscopy receiving state, the atomic number percentage of carbon is less than 30.0 at%, and the atomic number percentage of fluorine is less than 5.0 at%;
and analyzing a sputtering state of 5nm by Auger electron spectroscopy, wherein the atomic number percentage of the carbon is 0.0 at%, and the atomic number percentage of the fluorine is 0.0 at%.
10. The method for characterizing the quality of the aluminum bonding pad in the manufacture of the semiconductor wafer as claimed in any one of claims 1-2, wherein the transmission electron microscope analysis shows that the thickness of the aluminum oxide on the aluminum bonding pad is 5.0 ± 0.2 nm.
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Cited By (1)
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| CN114252319A (en) * | 2022-03-01 | 2022-03-29 | 江山季丰电子科技有限公司 | Fault analysis method of semiconductor laser, preparation method of sample and system |
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| HUA YOUNAN等: "Studies on A Qualification Method (OSAT) of Microchip Al Bondpads In Wafer Fabrication", 《35TH INTERNATIONAL SYMPOSIUM FOR TESTING AND FAILURE ANALYSIS AMERICAN SOCIETY FOR METALS》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114252319A (en) * | 2022-03-01 | 2022-03-29 | 江山季丰电子科技有限公司 | Fault analysis method of semiconductor laser, preparation method of sample and system |
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