CN107301960A - The appraisal procedure of chip metal pollution - Google Patents
The appraisal procedure of chip metal pollution Download PDFInfo
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- CN107301960A CN107301960A CN201610237873.3A CN201610237873A CN107301960A CN 107301960 A CN107301960 A CN 107301960A CN 201610237873 A CN201610237873 A CN 201610237873A CN 107301960 A CN107301960 A CN 107301960A
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- defect
- wafer
- appraisal procedure
- chip metal
- metal pollution
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Analysing Materials By The Use Of Radiation (AREA)
Abstract
The invention provides a kind of appraisal procedure of chip metal pollution, including step：Multiple chemical processing is carried out to wafer；Carry out surface inspection, the analysis of ESEM X-ray energy spectrum and defect classification successively to the wafer；By carrying out multiple chemical processing to wafer, compared with existing appraisal procedure, the defect at the deeper position of inside wafer can be detected in processing subsequently to wafer, to increase the precision of metallic pollution detection, the accuracy of the assessment of chip metal pollution is improved；And the present invention carries out surface inspection, the analysis of twice sweep Electronic Speculum X-ray energy spectrum twice and defect is classified twice, and result twice is subjected to comprehensive analysis, the information of metallic pollution must be obtained so as to more accurate, accurately chip metal pollution is estimated.
Description
Technical field
The present invention relates to semiconductor defect analysis field, more particularly to a kind of assessment side of chip metal pollution
Method.
Background technology
In manufacture of semiconductor, metal ion is referred to as removable ionic soil source, has in a semiconductor material
Very strong mobility, can cause oxide-polysilicon grating structure defect, the increase of PN junction leakage current, Shao Shuozai
Sub- life-span reduction, the change of threshold voltage are flowed, has serious harm to the yield and reliability of device.TXRF
Elemental analyser (Total X-ray Fluorescence) can only achieve 1E10atoms/cm2Precision, it is but smaller
The metal ion of amount is difficult to detect, and it is exceeded that TXRF elemental analysers are displayed without metal ion, but actually still
So there is metallic pollution.
Japan Patent (JP2009-139148) describes one kind with Japan Patent (JP2005-063984) and commented
Estimate the method for metallic pollution, for example：Surface is carried out using ESEM-X-ray energy spectrum (SEM-EDX) to sweep
Retouch；Surface inspection is carried out using LS and SP-3, especially, LS can distinguish crystal originated pits (COP)
With particle (particles)；Metallic pollution assessment is carried out using chemical analysis.
And in order to assess metal pollutant, Japan Patent (JP2015-220296) describes following steps：
Wafer is cleaned first (wafer cleaning)；Then the wafer is chemically treated
(chemical treatment)；Then high sensitivity surface inspection (high sensibility are carried out to the wafer
surface inspection)；Then Electronic Speculum-X-ray energy spectrum analysis (SEM-EDX) is scanned to the wafer；
Then defect classification (Defect classification) is carried out to the defect checked in the wafer；Then to institute
State wafer and carry out projection electron microscopic observation (TEM)；Defect is carried out to wafer successively finally according to above-mentioned testing result
Volume is calculated, density metal is calculated, surface metal concentration is calculated and a large amount of metal concentration analyses of wafer, most
The assessment result of metal pollutant is obtained eventually.
But, the metal that the above method is only able to detect on crystal column surface and the shallower position of inside wafer is dirty
Thing is contaminated, is then difficult to detect when metal pollutant is in the deeper position of inside wafer.Therefore, how
It is those skilled in the art's skill urgently to be resolved hurrily to detect the most metal pollutant of inside wafer as far as possible
Art problem.
The content of the invention
It is an object of the invention to provide a kind of appraisal procedure of chip metal pollution, solve in the prior art only
The problem of metal pollutant on crystal column surface and the shallower position of inside wafer can be detected.
The technical scheme is that a kind of appraisal procedure of chip metal pollution, comprises the following steps：
Step S01：Multiple chemical processing is carried out to wafer；
Step S02：The wafer is carried out successively surface inspection, scanned topographic map and
Defect is classified.
Further, in the appraisal procedure that the chip metal pollutes, in step S01, wafer is entered
Row is chemically treated twice.
Further, in the appraisal procedure that the chip metal pollutes, after being often once chemically treated,
It is required for completing step S02, is then chemically treated next time again.
Further, in the appraisal procedure that the chip metal pollutes, in step S01 and step S02 weights
After multiple completion, in addition to step S03：Carry out projection electron microscopic observation, defect stereometer successively to the wafer
Calculate, density metal is calculated, surface metal concentration is calculated and a large amount of metal concentration analyses of wafer.
Further, in the appraisal procedure that the chip metal pollutes, by the data of first time surface inspection
Analysis is combined with the data of second of surface inspection, its associated methods is：By first subsurface inspection
The defect overlapped with second of surface inspection is looked into as a defect, misaligned defect is used as additional defect.
Further, in the appraisal procedure that the chip metal pollutes, the wafer overall defect includes overlapping
Defect and misaligned defect.
Further, in the appraisal procedure that the chip metal pollutes, the method for the defect classification is：
In the defect that will be overlapped in the surface inspection species identical defect is as a kind of defect, and the coincidence lacks
Fall into diverse defect as surface inspection two kinds of defects.
Further, in the appraisal procedure that the chip metal pollutes, classified according to the defect twice
Data and the depth of defect obtained by the projection electron microscopic observation calculate the volume of defect.
Further, in the appraisal procedure that the chip metal pollutes, according to the ESEM-X twice
Ray Energy Spectrum Analysis result calculates the density of metal.
Further, in the appraisal procedure that the chip metal pollutes, the pollution for nickel silicide is used
The hydrofluoric acid of dilution is chemically treated.
Compared with prior art, the appraisal procedure for the chip metal pollution that the present invention is provided has following beneficial effect
Really：
1st, the present invention, can be rear compared with existing appraisal procedure by carrying out multiple chemical processing to wafer
Continue to detecting the defect at the deeper position of inside wafer in the processing of wafer, to increase metallic pollution detection
Precision, improves the accuracy of the assessment of chip metal pollution；
2nd, the present invention carries out surface inspection, twice sweep Electronic Speculum-X-ray energy spectrum analysis and twice defect twice
Classification, and result twice is subjected to comprehensive analysis, it must obtain the letter of metallic pollution so as to more accurate
Breath, is accurately estimated to chip metal pollution.
Brief description of the drawings
Fig. 1 is the flow chart of the appraisal procedure of chip metal pollution in one embodiment of the invention.
Fig. 2 a~2c is the profile of the wafer of existing defects in one embodiment of the invention.
Embodiment
To make present disclosure more clear understandable, below in conjunction with Figure of description, to present disclosure
It is described further.Certainly the invention is not limited in the specific embodiment, those skilled in the art institute is ripe
The general replacement known is also covered by within the scope of the present invention.
Secondly, the present invention has carried out detailed statement using schematic diagram, when present example is described in detail, in order to
It is easy to explanation, schematic diagram, should not be to this restriction as the present invention not according to general ratio partial enlargement.
The present invention core concept be：The present invention is assessed by carrying out multiple chemical processing to wafer with existing
Method is compared, and the defect at the deeper position of inside wafer can be detected in processing subsequently to wafer, with
Increase the precision of metallic pollution detection, improve the accuracy of the assessment of chip metal pollution；The present invention carries out two
Subsurface is checked, twice sweep Electronic Speculum-X-ray energy spectrum analysis and defect is classified twice, and by knot twice
Fruit carries out comprehensive analysis, and the information of metallic pollution must be obtained so as to more accurate, accurately to wafer gold
Category pollution is estimated.
Fig. 1 is the flow chart of the appraisal procedure of chip metal pollution in one embodiment of the invention, as shown in figure 1,
The present invention proposes a kind of appraisal procedure of chip metal pollution, comprises the following steps：
Step S01：Multiple chemical processing is carried out to wafer；
Step S02：The wafer is carried out successively surface inspection, scanned topographic map and
Defect is classified.
In step S01, by carrying out multiple chemical processing to wafer so that at the deeper position of inside wafer
Defect can be detected so that increase metallic pollution detection precision so that assessment result is more accurate.
Pollution for nickel silicide is chemically treated using the hydrofluoric acid of dilution.
It is understood that the shallower position of the inside wafer referred in the present embodiment and the deeper position of inside wafer
Be comparatively, the shallower position of inside wafer relative to the deeper position of inside wafer its inside wafer away from
From crystal column surface closer to, the inside wafer deeper inside position relative to the shallower position of inside wafer its in wafer
Inner distance crystal column surface is farther.
The present invention to wafer by carrying out multiple chemical processing so that the defect energy at the deeper position of inside wafer
Enough it is detected, refer to shown in Fig. 2 a~2c, it is the profile of the wafer of existing defects.Such as Fig. 2 a institutes
Show there are two defects of different depth inside wafer 10：First defect 11 and the second defect 12, institute
The first defect 11 is stated relative to the second defect 12 to be located at the deeper position of inside wafer.Existing wafer gold
The method of category Contamination Assessment is merely able to detect the second defect 12 at the shallower position of inside wafer, such as schemes
Shown in 2b, the first defect 11 at the deeper position of inside wafer can not be then detected because method is limited,
But the defect is present in fact, and the result that this testing result causes metallic pollution to be assessed is inaccurate.Pass through
A kind of appraisal procedure of chip metal pollution provided by the present invention, carries out multiple chemical processing, then to wafer
The first defect 11 is able to detect that in processing subsequently to wafer, as shown in Figure 2 c, so that it is dirty to increase metal
The precision of detection is contaminated, the accuracy of the assessment of chip metal pollution is improved.
In step S02, penetrated to carrying out surface inspection, ESEM-X successively by chemically treated wafer
Line energy spectrum analysis (SEM-EDX) and defect classification.
It is preferred that, wafer is chemically treated twice.And often once it is chemically treated, then to wafer
One-time surface inspection, scanned topographic map (SEM-EDX) and defect classification are carried out, so
It is chemically treated next time again afterwards.
The data of the data of first time surface inspection and second of surface inspection are combined analysis, it is combined
Method is：The defect that the first time surface inspection is overlapped with second of surface inspection as a defect,
Misaligned defect is used as additional defect.The wafer overall defect includes registration fault and misaligned defect.Institute
Stating the method for defect classification is：It regard species identical defect in the defect overlapped described in surface inspection as original
In beginning defect, the defect of the coincidence diverse defect as surface inspection two kinds of defects.
The present invention carries out surface inspection, twice sweep Electronic Speculum-X-ray energy spectrum analysis and twice defect point twice
Class, and result twice is subjected to comprehensive analysis, the information of metallic pollution must be obtained so as to more accurate,
Accurately chip metal pollution is estimated.
After step S01 and step S02 are repeatedly performed, in addition to step S03：To the wafer successively
Carry out projection electron microscopic observation (TEM), the calculating of defect volume, density metal is calculated, surface metal concentration is calculated
And a large amount of metal concentration analyses of wafer.
The projection electron microscopic observation can obtain the depth of defect, and the calculating of defect volume lacks according to described twice
The depth of defect for falling into the data of classification and being obtained by the projection electron microscopic observation is calculated.The density metal root
Calculated according to the scanned topographic map result twice.Finally according to the defect volume and institute
The calculating that density metal completes surface metal concentration is stated, so that concentration analysis is carried out to substantial amounts of metal in wafer,
Obtain the assessment result of chip metal pollution.
In summary, the appraisal procedure for the chip metal pollution that the present invention is provided, it is multiple by being carried out to wafer
Chemical treatment, compared with existing appraisal procedure, can detect inside wafer in processing subsequently to wafer
Defect at deeper position, to increase the precision of metallic pollution detection, improves the assessment of chip metal pollution
Accuracy；The present invention carries out surface inspection, twice sweep Electronic Speculum-X-ray energy spectrum analysis twice and lacked twice
Classification is fallen into, and result twice is subjected to comprehensive analysis, metallic pollution must be obtained so as to more accurate
Information, is accurately estimated to chip metal pollution.
Foregoing description is only the description to present pre-ferred embodiments, not to any limit of the scope of the invention
Calmly, the those of ordinary skill in field of the present invention does according to the disclosure above content any change, modification, belong to
In the protection domain of claims.
Claims (10)
1. a kind of appraisal procedure of chip metal pollution, it is characterised in that comprise the following steps：
Step S01：Multiple chemical processing is carried out to wafer；
Step S02：The wafer is carried out successively surface inspection, scanned topographic map and
Defect is classified.
2. the appraisal procedure of chip metal pollution as claimed in claim 1, it is characterised in that in step S01
In, wafer is chemically treated twice.
3. the appraisal procedure of chip metal pollution as claimed in claim 2, it is characterised in that often carry out one
After secondary chemical treatment, it is required for completing step S02, is then chemically treated next time again.
4. the appraisal procedure of chip metal pollution as claimed in claim 3, it is characterised in that in step S01
After being repeatedly performed with step S02, in addition to step S03：The wafer is carried out successively projection electron microscopic observation,
Defect volume is calculated, density metal is calculated, surface metal concentration is calculated and a large amount of metal concentration analyses of wafer.
5. the appraisal procedure of chip metal pollution as claimed in claim 4, it is characterised in that will for the first time
The data of surface inspection and the data of second of surface inspection are combined analysis, and its associated methods is：By institute
Defect that first time surface inspection overlaps with second of surface inspection is stated as a defect, misaligned lacks
Fall into and be used as additional defect.
6. the appraisal procedure of chip metal pollution as claimed in claim 5, it is characterised in that the wafer
Overall defect includes registration fault and misaligned defect.
7. the appraisal procedure of chip metal pollution as claimed in claim 5, it is characterised in that the defect
The method of classification is：Species identical defect is as a kind of defect in the defect that will be overlapped in the surface inspection,
In the defect of the coincidence diverse defect as surface inspection two kinds of defects.
8. the appraisal procedure of chip metal pollution as claimed in claim 7, it is characterised in that according to twice
The data of the defect classification and the depth of defect obtained by the projection electron microscopic observation calculate the body of defect
Product.
9. the appraisal procedure of chip metal pollution as claimed in claim 7, it is characterised in that according to twice
The scanned topographic map result calculates the density of metal.
10. such as the appraisal procedure that chip metal according to any one of claims 1 to 9 pollutes, its feature exists
In the pollution for nickel silicide is chemically treated using the hydrofluoric acid of dilution.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610237873.3A CN107301960A (en) | 2016-04-15 | 2016-04-15 | The appraisal procedure of chip metal pollution |
| TW105128040A TWI616964B (en) | 2016-04-15 | 2016-08-31 | Wafer metal contamination evaluation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610237873.3A CN107301960A (en) | 2016-04-15 | 2016-04-15 | The appraisal procedure of chip metal pollution |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107301960A true CN107301960A (en) | 2017-10-27 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610237873.3A Pending CN107301960A (en) | 2016-04-15 | 2016-04-15 | The appraisal procedure of chip metal pollution |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN107301960A (en) |
| TW (1) | TWI616964B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110534406A (en) * | 2018-05-24 | 2019-12-03 | 台湾积体电路制造股份有限公司 | Prevent the method and system that wafer is contaminated by the metal ions |
| CN111341684A (en) * | 2020-03-03 | 2020-06-26 | 胜科纳米（苏州）有限公司 | Characterization method for quality of aluminum bonding pad in semiconductor wafer manufacturing |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569121A (en) * | 2012-01-19 | 2012-07-11 | 叶伟清 | Method for detecting impurities inside wafer |
| JP2014041030A (en) * | 2012-08-21 | 2014-03-06 | Shin Etsu Handotai Co Ltd | Impurity analysis method of semiconductor substrate |
| JP2015220296A (en) * | 2014-05-15 | 2015-12-07 | 信越半導体株式会社 | Contamination evaluation method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8143078B2 (en) * | 2009-12-23 | 2012-03-27 | Memc Electronic Materials, Inc. | Methods for monitoring the amount of contamination imparted into semiconductor wafers during wafer processing |
-
2016
- 2016-04-15 CN CN201610237873.3A patent/CN107301960A/en active Pending
- 2016-08-31 TW TW105128040A patent/TWI616964B/en active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569121A (en) * | 2012-01-19 | 2012-07-11 | 叶伟清 | Method for detecting impurities inside wafer |
| JP2014041030A (en) * | 2012-08-21 | 2014-03-06 | Shin Etsu Handotai Co Ltd | Impurity analysis method of semiconductor substrate |
| JP2015220296A (en) * | 2014-05-15 | 2015-12-07 | 信越半導体株式会社 | Contamination evaluation method |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110534406A (en) * | 2018-05-24 | 2019-12-03 | 台湾积体电路制造股份有限公司 | Prevent the method and system that wafer is contaminated by the metal ions |
| US11742196B2 (en) | 2018-05-24 | 2023-08-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Systems and methods for metallic deionization |
| CN111341684A (en) * | 2020-03-03 | 2020-06-26 | 胜科纳米（苏州）有限公司 | Characterization method for quality of aluminum bonding pad in semiconductor wafer manufacturing |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201738980A (en) | 2017-11-01 |
| TWI616964B (en) | 2018-03-01 |
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