CN114243448B - 半导体激光二极管 - Google Patents
半导体激光二极管 Download PDFInfo
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- CN114243448B CN114243448B CN202111420786.9A CN202111420786A CN114243448B CN 114243448 B CN114243448 B CN 114243448B CN 202111420786 A CN202111420786 A CN 202111420786A CN 114243448 B CN114243448 B CN 114243448B
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- layer
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- semiconductor
- laser diode
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 214
- 239000000463 material Substances 0.000 claims abstract description 113
- 239000012780 transparent material Substances 0.000 claims abstract description 8
- 239000007769 metal material Substances 0.000 claims description 19
- 150000001875 compounds Chemical class 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 239000011800 void material Substances 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 405
- 239000000758 substrate Substances 0.000 description 34
- 238000002161 passivation Methods 0.000 description 10
- 238000010521 absorption reaction Methods 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910006404 SnO 2 Inorganic materials 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000005670 electromagnetic radiation Effects 0.000 description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- -1 nitride compound Chemical class 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910004607 CdSnO3 Inorganic materials 0.000 description 1
- 229910005264 GaInO3 Inorganic materials 0.000 description 1
- 229910017902 MgIn2O4 Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910003107 Zn2SnO4 Inorganic materials 0.000 description 1
- 229910007694 ZnSnO3 Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 1
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- SJLOMQIUPFZJAN-UHFFFAOYSA-N oxorhodium Chemical compound [Rh]=O SJLOMQIUPFZJAN-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910003450 rhodium oxide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000002211 ultraviolet spectrum Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
- H01S5/04253—Electrodes, e.g. characterised by the structure characterised by the material having specific optical properties, e.g. transparent electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
- H01S2301/176—Specific passivation layers on surfaces other than the emission facet
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
- H01S5/1014—Tapered waveguide, e.g. spotsize converter
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111420786.9A CN114243448B (zh) | 2017-06-19 | 2018-06-08 | 半导体激光二极管 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102017113389.5 | 2017-06-19 | ||
| DE102017113389.5A DE102017113389B4 (de) | 2017-06-19 | 2017-06-19 | Halbleiterlaserdiode |
| CN201880040771.XA CN110770985B (zh) | 2017-06-19 | 2018-06-08 | 半导体激光二极管 |
| PCT/EP2018/065185 WO2018234068A1 (de) | 2017-06-19 | 2018-06-08 | Halbleiterlaserdiode |
| CN202111420786.9A CN114243448B (zh) | 2017-06-19 | 2018-06-08 | 半导体激光二极管 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201880040771.XA Division CN110770985B (zh) | 2017-06-19 | 2018-06-08 | 半导体激光二极管 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114243448A CN114243448A (zh) | 2022-03-25 |
| CN114243448B true CN114243448B (zh) | 2024-08-02 |
Family
ID=62631062
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111420786.9A Active CN114243448B (zh) | 2017-06-19 | 2018-06-08 | 半导体激光二极管 |
| CN201880040771.XA Active CN110770985B (zh) | 2017-06-19 | 2018-06-08 | 半导体激光二极管 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201880040771.XA Active CN110770985B (zh) | 2017-06-19 | 2018-06-08 | 半导体激光二极管 |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US11336078B2 (https=) |
| JP (1) | JP2020524407A (https=) |
| CN (2) | CN114243448B (https=) |
| DE (1) | DE102017113389B4 (https=) |
| WO (1) | WO2018234068A1 (https=) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102017113389B4 (de) * | 2017-06-19 | 2021-07-29 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterlaserdiode |
| WO2020092290A1 (en) | 2018-10-30 | 2020-05-07 | Exceutas Canada, Inc. | Low inductance laser driver packaging using lead-frame and thin dielectric layer mask pad definition |
| WO2020092287A1 (en) | 2018-11-01 | 2020-05-07 | Excelitas Canada, Inc. | Quad flat no-leads package for side emitting laser diode |
| WO2020142292A1 (en) * | 2018-12-31 | 2020-07-09 | Nlight, Inc. | Method, system, apparatus for differential current injection |
| DE102019102499A1 (de) * | 2019-01-31 | 2020-08-06 | Forschungsverbund Berlin E.V. | Vorrichtung zur Erzeugung von Laserstrahlung |
| DE102019106536B4 (de) * | 2019-03-14 | 2024-11-28 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterlaserdiode und Verfahren zur Herstellung einer Halbleiterlaserdiode |
| JP7407027B2 (ja) * | 2020-03-09 | 2023-12-28 | パナソニックホールディングス株式会社 | 半導体発光素子 |
| DE102020108941B4 (de) | 2020-03-31 | 2022-05-25 | Ferdinand-Braun-Institut gGmbH, Leibniz- Institut für Höchstfrequenztechnik | Diodenlaser mit verrringerter Strahldivergenz |
| FR3109020B1 (fr) | 2020-04-06 | 2022-02-25 | Scintil Photonics | Dispositif photonique pour etablir un rayonnement lumineux comprenant un mode optique dans un guide d'onde |
| DE102022106173A1 (de) * | 2022-03-16 | 2023-09-21 | Ams-Osram International Gmbh | Licht emittierende diode |
| DE102022110694A1 (de) | 2022-05-02 | 2023-11-02 | Ams-Osram International Gmbh | Optoelektronisches halbleiterlaserbauelement und verfahren zur herstellung eines optoelektronischen halbleiterlaserbauelements |
| FR3150347A1 (fr) * | 2023-06-22 | 2024-12-27 | Thales | Composant optoélectronique à semi-conducteur ayant une dissipation thermique améliorée |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105742422A (zh) * | 2014-12-24 | 2016-07-06 | 精工爱普生株式会社 | 发光装置及投影仪 |
| WO2017055287A1 (de) * | 2015-09-28 | 2017-04-06 | Osram Opto Semiconductors Gmbh | Halbleiterlaser mit unterdrückter stromeinprägung an der facette |
| CN110140264A (zh) * | 2016-12-29 | 2019-08-16 | 欧司朗光电半导体有限公司 | 半导体激光二极管 |
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| JPH11220212A (ja) * | 1998-02-02 | 1999-08-10 | Toshiba Corp | 光素子、光素子の駆動方法及び半導体レーザ素子 |
| JP4615179B2 (ja) | 2002-06-27 | 2011-01-19 | 古河電気工業株式会社 | 半導体レーザ装置、半導体レーザモジュールおよび光ファイバ増幅器 |
| US6990132B2 (en) * | 2003-03-20 | 2006-01-24 | Xerox Corporation | Laser diode with metal-oxide upper cladding layer |
| DE10339985B4 (de) | 2003-08-29 | 2008-12-04 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement mit einer transparenten Kontaktschicht und Verfahren zu dessen Herstellung |
| DE602004024451D1 (de) * | 2003-12-22 | 2010-01-14 | Panasonic Corp | Halbleiterlaser-bauelement und laserprojektor |
| US7279751B2 (en) | 2004-06-21 | 2007-10-09 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device and manufacturing method thereof |
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| DE102007029370A1 (de) * | 2007-05-04 | 2008-11-06 | Osram Opto Semiconductors Gmbh | Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips |
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| DE102012106687B4 (de) | 2012-07-24 | 2019-01-24 | Osram Opto Semiconductors Gmbh | Steglaser |
| JP6405283B2 (ja) * | 2015-04-10 | 2018-10-17 | 日本電信電話株式会社 | リッジ導波路型半導体レーザ |
| DE102015116335B4 (de) * | 2015-09-28 | 2024-10-24 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterlaser |
| CN105811242A (zh) | 2016-04-28 | 2016-07-27 | 中国科学院长春光学精密机械与物理研究所 | 周期性金属接触增益耦合分布反馈半导体激光器 |
| DE102017113389B4 (de) * | 2017-06-19 | 2021-07-29 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterlaserdiode |
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2017
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2018
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Patent Citations (3)
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|---|---|---|---|---|
| CN105742422A (zh) * | 2014-12-24 | 2016-07-06 | 精工爱普生株式会社 | 发光装置及投影仪 |
| WO2017055287A1 (de) * | 2015-09-28 | 2017-04-06 | Osram Opto Semiconductors Gmbh | Halbleiterlaser mit unterdrückter stromeinprägung an der facette |
| CN110140264A (zh) * | 2016-12-29 | 2019-08-16 | 欧司朗光电半导体有限公司 | 半导体激光二极管 |
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| US20200161836A1 (en) | 2020-05-21 |
| US11695253B2 (en) | 2023-07-04 |
| CN110770985A (zh) | 2020-02-07 |
| WO2018234068A1 (de) | 2018-12-27 |
| CN110770985B (zh) | 2021-12-17 |
| DE102017113389B4 (de) | 2021-07-29 |
| US20230299562A1 (en) | 2023-09-21 |
| CN114243448A (zh) | 2022-03-25 |
| US11336078B2 (en) | 2022-05-17 |
| US12062887B2 (en) | 2024-08-13 |
| US20220239069A1 (en) | 2022-07-28 |
| DE102017113389A1 (de) | 2018-12-20 |
| JP2020524407A (ja) | 2020-08-13 |
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