DE102017113389B4 - Halbleiterlaserdiode - Google Patents

Halbleiterlaserdiode Download PDF

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Publication number
DE102017113389B4
DE102017113389B4 DE102017113389.5A DE102017113389A DE102017113389B4 DE 102017113389 B4 DE102017113389 B4 DE 102017113389B4 DE 102017113389 A DE102017113389 A DE 102017113389A DE 102017113389 B4 DE102017113389 B4 DE 102017113389B4
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DE
Germany
Prior art keywords
layer
semiconductor
cladding layer
laser diode
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE102017113389.5A
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German (de)
English (en)
Other versions
DE102017113389A1 (de
Inventor
Sven Gerhard
Christoph Eichler
Alfred Lell
Bernhard Stojetz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DE102017113389.5A priority Critical patent/DE102017113389B4/de
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to CN202111420786.9A priority patent/CN114243448B/zh
Priority to US16/611,372 priority patent/US11336078B2/en
Priority to CN201880040771.XA priority patent/CN110770985B/zh
Priority to PCT/EP2018/065185 priority patent/WO2018234068A1/de
Priority to JP2019570091A priority patent/JP2020524407A/ja
Publication of DE102017113389A1 publication Critical patent/DE102017113389A1/de
Application granted granted Critical
Publication of DE102017113389B4 publication Critical patent/DE102017113389B4/de
Priority to US17/720,794 priority patent/US11695253B2/en
Priority to US18/322,661 priority patent/US12062887B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H01S5/04253—Electrodes, e.g. characterised by the structure characterised by the material having specific optical properties, e.g. transparent electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1014—Tapered waveguide, e.g. spotsize converter

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
DE102017113389.5A 2017-06-19 2017-06-19 Halbleiterlaserdiode Expired - Fee Related DE102017113389B4 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
DE102017113389.5A DE102017113389B4 (de) 2017-06-19 2017-06-19 Halbleiterlaserdiode
US16/611,372 US11336078B2 (en) 2017-06-19 2018-06-08 Semiconductor laser diode
CN201880040771.XA CN110770985B (zh) 2017-06-19 2018-06-08 半导体激光二极管
PCT/EP2018/065185 WO2018234068A1 (de) 2017-06-19 2018-06-08 Halbleiterlaserdiode
CN202111420786.9A CN114243448B (zh) 2017-06-19 2018-06-08 半导体激光二极管
JP2019570091A JP2020524407A (ja) 2017-06-19 2018-06-08 半導体レーザーダイオード
US17/720,794 US11695253B2 (en) 2017-06-19 2022-04-14 Semiconductor laser diode
US18/322,661 US12062887B2 (en) 2017-06-19 2023-05-24 Semiconductor laser diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102017113389.5A DE102017113389B4 (de) 2017-06-19 2017-06-19 Halbleiterlaserdiode

Publications (2)

Publication Number Publication Date
DE102017113389A1 DE102017113389A1 (de) 2018-12-20
DE102017113389B4 true DE102017113389B4 (de) 2021-07-29

Family

ID=62631062

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102017113389.5A Expired - Fee Related DE102017113389B4 (de) 2017-06-19 2017-06-19 Halbleiterlaserdiode

Country Status (5)

Country Link
US (3) US11336078B2 (https=)
JP (1) JP2020524407A (https=)
CN (2) CN114243448B (https=)
DE (1) DE102017113389B4 (https=)
WO (1) WO2018234068A1 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017113389B4 (de) * 2017-06-19 2021-07-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaserdiode
WO2020092290A1 (en) 2018-10-30 2020-05-07 Exceutas Canada, Inc. Low inductance laser driver packaging using lead-frame and thin dielectric layer mask pad definition
WO2020092287A1 (en) 2018-11-01 2020-05-07 Excelitas Canada, Inc. Quad flat no-leads package for side emitting laser diode
WO2020142292A1 (en) * 2018-12-31 2020-07-09 Nlight, Inc. Method, system, apparatus for differential current injection
DE102019102499A1 (de) * 2019-01-31 2020-08-06 Forschungsverbund Berlin E.V. Vorrichtung zur Erzeugung von Laserstrahlung
DE102019106536B4 (de) * 2019-03-14 2024-11-28 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaserdiode und Verfahren zur Herstellung einer Halbleiterlaserdiode
JP7407027B2 (ja) * 2020-03-09 2023-12-28 パナソニックホールディングス株式会社 半導体発光素子
DE102020108941B4 (de) 2020-03-31 2022-05-25 Ferdinand-Braun-Institut gGmbH, Leibniz- Institut für Höchstfrequenztechnik Diodenlaser mit verrringerter Strahldivergenz
FR3109020B1 (fr) 2020-04-06 2022-02-25 Scintil Photonics Dispositif photonique pour etablir un rayonnement lumineux comprenant un mode optique dans un guide d'onde
DE102022106173A1 (de) * 2022-03-16 2023-09-21 Ams-Osram International Gmbh Licht emittierende diode
DE102022110694A1 (de) 2022-05-02 2023-11-02 Ams-Osram International Gmbh Optoelektronisches halbleiterlaserbauelement und verfahren zur herstellung eines optoelektronischen halbleiterlaserbauelements
FR3150347A1 (fr) * 2023-06-22 2024-12-27 Thales Composant optoélectronique à semi-conducteur ayant une dissipation thermique améliorée

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040184497A1 (en) 2003-03-20 2004-09-23 Xerox Corporation Laser diode with metal-oxide upper cladding layer
US20090092163A1 (en) 2007-10-03 2009-04-09 Sony Corporation Laser diode and method of manufacturing the same
US20110051768A1 (en) 2008-09-24 2011-03-03 Palo Alto Research Center Incorporated Semiconductor Light Emitting Devices With Non-Epitaxial Upper Cladding
DE102016125857A1 (de) 2016-12-29 2018-07-05 Osram Opto Semiconductors Gmbh Halbleiterlaserdiode

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11220212A (ja) * 1998-02-02 1999-08-10 Toshiba Corp 光素子、光素子の駆動方法及び半導体レーザ素子
JP4615179B2 (ja) 2002-06-27 2011-01-19 古河電気工業株式会社 半導体レーザ装置、半導体レーザモジュールおよび光ファイバ増幅器
DE10339985B4 (de) 2003-08-29 2008-12-04 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit einer transparenten Kontaktschicht und Verfahren zu dessen Herstellung
DE602004024451D1 (de) * 2003-12-22 2010-01-14 Panasonic Corp Halbleiterlaser-bauelement und laserprojektor
US7279751B2 (en) 2004-06-21 2007-10-09 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device and manufacturing method thereof
GB2432456A (en) * 2005-11-21 2007-05-23 Bookham Technology Plc High power semiconductor laser diode
US8729580B2 (en) * 2005-12-06 2014-05-20 Toshiba Techno Center, Inc. Light emitter with metal-oxide coating
JP5072372B2 (ja) 2007-01-16 2012-11-14 株式会社東芝 遠隔監視・診断システム
DE102007029370A1 (de) * 2007-05-04 2008-11-06 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips
JP5020866B2 (ja) * 2007-05-07 2012-09-05 キヤノン株式会社 垂直共振器型面発光レーザ
DE102008014093B4 (de) * 2007-12-27 2020-02-06 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaserchip mit zumindest einer Strombarriere
JP5084540B2 (ja) * 2008-02-06 2012-11-28 キヤノン株式会社 垂直共振器型面発光レーザ
KR100945993B1 (ko) 2008-03-06 2010-03-09 삼성전기주식회사 반도체 레이저 다이오드
DE102008035784A1 (de) * 2008-07-31 2010-02-11 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
DE102008052405A1 (de) 2008-10-21 2010-04-22 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
DE102009015314B4 (de) * 2009-03-27 2023-04-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaservorrichtung
US20100327300A1 (en) 2009-06-25 2010-12-30 Koninklijke Philips Electronics N.V. Contact for a semiconductor light emitting device
DE102010002966B4 (de) * 2010-03-17 2020-07-30 Osram Opto Semiconductors Gmbh Laserdiodenanordnung und Verfahren zum Herstellen einer Laserdiodenanordnung
TW201210074A (en) 2010-08-20 2012-03-01 Chi Mei Lighting Tech Corp Light-emitting diode structure and method for manufacturing the same
DE102011054954A1 (de) * 2011-10-31 2013-05-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronischer Halbleiterlaser
DE102012106687B4 (de) 2012-07-24 2019-01-24 Osram Opto Semiconductors Gmbh Steglaser
JP6414464B2 (ja) 2014-12-24 2018-10-31 セイコーエプソン株式会社 発光装置およびプロジェクター
JP6405283B2 (ja) * 2015-04-10 2018-10-17 日本電信電話株式会社 リッジ導波路型半導体レーザ
DE102015116336B4 (de) * 2015-09-28 2020-03-19 Osram Opto Semiconductors Gmbh Halbleiterlaser
DE102015116335B4 (de) * 2015-09-28 2024-10-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaser
CN105811242A (zh) 2016-04-28 2016-07-27 中国科学院长春光学精密机械与物理研究所 周期性金属接触增益耦合分布反馈半导体激光器
DE102017113389B4 (de) * 2017-06-19 2021-07-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaserdiode

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040184497A1 (en) 2003-03-20 2004-09-23 Xerox Corporation Laser diode with metal-oxide upper cladding layer
US20090092163A1 (en) 2007-10-03 2009-04-09 Sony Corporation Laser diode and method of manufacturing the same
US20110051768A1 (en) 2008-09-24 2011-03-03 Palo Alto Research Center Incorporated Semiconductor Light Emitting Devices With Non-Epitaxial Upper Cladding
DE102016125857A1 (de) 2016-12-29 2018-07-05 Osram Opto Semiconductors Gmbh Halbleiterlaserdiode

Also Published As

Publication number Publication date
US20200161836A1 (en) 2020-05-21
US11695253B2 (en) 2023-07-04
CN110770985A (zh) 2020-02-07
WO2018234068A1 (de) 2018-12-27
CN110770985B (zh) 2021-12-17
US20230299562A1 (en) 2023-09-21
CN114243448B (zh) 2024-08-02
CN114243448A (zh) 2022-03-25
US11336078B2 (en) 2022-05-17
US12062887B2 (en) 2024-08-13
US20220239069A1 (en) 2022-07-28
DE102017113389A1 (de) 2018-12-20
JP2020524407A (ja) 2020-08-13

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