Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
  • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
  • H01S5/042—Electrical excitation ; Circuits therefor
  • H01S5/0425—Electrodes, e.g. characterised by the structure
  • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
  • H01S5/04253—Electrodes, e.g. characterised by the structure characterised by the material having specific optical properties, e.g. transparent electrodes
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
  • H01S5/042—Electrical excitation ; Circuits therefor
  • H01S5/0425—Electrodes, e.g. characterised by the structure
  • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/30—Structure or shape of the active region; Materials used for the active region
  • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
  • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/30—Structure or shape of the active region; Materials used for the active region
  • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
  • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
  • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
  • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S2301/00—Functional characteristics
  • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S2301/00—Functional characteristics
  • H01S2301/17—Semiconductor lasers comprising special layers
  • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
  • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
  • H01S5/1014—Tapered waveguide, e.g. spotsize converter

Definitions

• HALF LEVEL ERLASER DIODE A semiconductor laser diode is indicated.
• the light-generating layer is arranged between cladding layers, which, due to their refractive index, form a waveguide in
• the cladding layers exist
• AlGaN which is used for cladding layers of
• nitride compound semiconductor materials based laser diodes is used, however, are difficult with a high p-type doping and thus difficult with a good
• high-power laser diodes usually carry a plurality of longitudinal and lateral laser modes, so that the optical intensity on the output coupling facet is effected by the sum of all laser modes oscillating in the laser modes.
• this can lead to an inhomogeneous intensity distribution, in particular in the lateral direction, which
• At least one object of certain embodiments is to provide a semiconductor laser diode.
• Semiconductor laser diode at least one active layer, which is provided and adapted to, during operation of the
• the active layer may in particular be part of a
• Semiconductor layer sequence with a plurality of Semiconductor layers and have a main extension plane which is perpendicular to a direction of arrangement of the layers of the semiconductor layer sequence. That in the active layer and in particular in the active region in the
• Operation of the semiconductor laser diode generated light can be emitted via a light output surface.
• the active layer may have exactly one active region.
• the active area can at least
• the active region can additionally be at least partially replaced by a
• Web waveguide structure be defined, ie by a web formed in the form of an elongated increase in
• Layer prepared which is designed and intended to generate light during operation of the semiconductor laser diode, in particular in the infrared to ultraviolet spectrum.
• a semiconductor layer sequence can be produced with the active layer.
• the light output surface and the rear side surface which may also be referred to as so-called facets, may in particular be side surfaces of the semiconductor laser diode and in particular at least partially the semiconductor layer sequence.
• suitable optical coatings in particular reflective or partially reflecting layers or
• Resonator for the light generated in the active layer can form.
• the active area can be between the
• the longitudinal direction is called.
• the longitudinal direction can be parallel to
• Arrangement direction of the layers one above the other ie a direction perpendicular to the main extension plane of the active layer, is referred to here and below as a vertical direction.
• transverse direction Direction and perpendicular to the vertical direction is referred to here and below as a transverse direction or as a lateral direction.
• the longitudinal direction and the transverse / lateral direction can thus span a plane which is parallel to the main extension plane of the active layer.
• the semiconductor layer sequence can be used in particular as
• the semiconductor layer sequence may be based on InAlGaN.
• InAlGaN-based semiconductor layer sequences include, in particular, those in which the epitaxially produced semiconductor layer sequence generally has a layer sequence of different types
• III-V compound semiconductor material system In x Al y Gai x - y N with O ⁇ x ⁇ l, O ⁇ y ⁇ l and x + y ⁇ 1.
• the active layer may be based on such a material.
• Semiconductor layer sequences comprising at least one active layer based on InAlGaN, for example, preferably electromagnetic radiation in a
• the semiconductor layer sequence can also be based on InAlGaP, that is, the
• Semiconductor layer sequence may have different individual layers, of which at least one single layer,
• the active layer a material of the III-V compound semiconductor material system In x Al y Gai- x - y P with 0 ⁇ x ⁇ l, O ⁇ y ⁇ l and x + y ⁇ 1 has.
• semiconductor layer sequences comprising at least one InAlGaP-based active layer may preferentially emit electromagnetic radiation having one or more spectral components in a green to red wavelength range.
• the semiconductor layer sequence may also comprise other III-V compound semiconductor material systems, for example an InAlGaAs-based material, or II -VI compound semiconductor material systems.
• emissive semiconductor chip comprising an InAlGaAs-based material, be electromagnetic
• An II-VI compound semiconductor material may have at least one second main group element such as Be, Mg, Ca, Sr, and a sixth main group element such as O, S, Se.
• the II-VI compound semiconductor materials include: ZnO, ZnMgO, CdS, ZnCdS, MgBeO.
• Semiconductor layer sequence with the active layer may be applied to a substrate.
• the substrate can be
• the substrate may be sapphire,
• the substrate may be formed as a growth substrate on which the
• Layer and in particular a semiconductor layer sequence with the active layer can by means of an epitaxial process, for example by means of metalorganic vapor phase epitaxy (MOVPE) or molecular beam epitaxy (MBE), on the
• the growth substrate may also be possible for the growth substrate to be removed after the growth process.
• the semiconductor layer sequence for example, after being grown on a substrate designed as a carrier substrate.
• the active layer may be, for example, a conventional pn junction, a double heterostructure, a single quantum well structure (SQW structure), or a multiple quantum well structure (MQW structure) for light generation
• the semiconductor layer sequence in addition to the active layer further functional layers and
• Charge carrier transport layers ie electron or
• Semiconductor contact layers undoped or p- or n-doped confinement, cladding or waveguide layers, barrier layers, planarization layers, buffer layers, protective layers and / or electrodes and combinations thereof.
• additional layers such as buffer layers, barrier layers and / or protective layers, also perpendicular to the growth direction of the
• Semiconductor layer sequence may be arranged around, that is approximately on the side surfaces of the semiconductor layer sequence.
• the semiconductor laser diode has a
• the surface region of the semiconductor laser diode is in particular a surface region of the semiconductor layer sequence.
• the semiconductor layer sequence has a surface with which the semiconductor layer sequence terminates on one side, in particular in the vertical direction. At least part of this surface forms the surface area on which the first cladding layer is applied in direct contact. The first The lateral surface is thus in direct contact with the
• the ridge waveguide structure may be formed, for example, on a side of the semiconductor layer sequence facing away from a substrate.
• the ridge waveguide structure may have a ridge top and ridge side surfaces adjacent thereto
• the semiconductor material can be generated in particular by removing a portion of the semiconductor material from the side facing away from the substrate of the semiconductor layer sequence.
• Web waveguide structure extends in the longitudinal direction and is in the lateral direction on both sides by the
• Semiconductor layer sequence can be formed by one part or particularly preferably by the entire web top side.
• the semiconductor laser diode may be used as such called wide stripe laser diode without
• Web waveguide structure may be formed, in which case by the first cladding layer directly
• Semiconductor layer sequence can be formed.
• the remaining part of the top can be covered by a passivation material.
• Semiconductor contact layer can by a highly doped
• Semiconductor layer are formed, which has a low
• Cladding layer arranged on the p-side it may be in the semiconductor contact layer, in particular a p + -doped semiconductor layer.
• Mantle layer on a transparent material from a different material from the semiconductor layer sequence material system may mean in particular that the first cladding layer does not comprise any material of the compound semiconductor material system from which the semiconductor layers of the
• the first cladding layer may be applied to the surface region by a manufacturing process that is different from the epitaxial growth process used to produce the semiconductor layer sequence. For example, that can
• Production process for the production of the first Coat layer be a non-epitaxial process.
• the first cladding layer can be produced, for example, by means of vapor deposition, sputtering or chemical vapor deposition.
• transparent is here and below a layer, which may also be a sequence of layers, which is at least permeable to electromagnetic radiation, for example with one or more spectral components in the range of infrared, visible and / or ultraviolet light.
• Semiconductor laser diode may be a transparent layer
• Jacket layer has a transparent material, has the consequence that in the active area in the operation of
• Coat layer is sufficient.
• the light generated in the active region can be due to the forming
• Semiconductor layer sequence and the first cladding layer may have dropped to a value of greater than or equal to 1% or greater than or equal to 5% or greater than or equal to 10%.
• the second cladding layer may in particular be formed by a part of the semiconductor layer sequence, that is to say one or more semiconductor layers.
• the first and second cladding layer which thus comprise materials of different material systems, each have a refractive index lower than that
• Refractive index of the active layer As a result, waveguiding of the light generated in operation in the active layer can be achieved in the vertical direction.
• the refractive index of the first and second cladding layers may be the same or different.
• the active layer can be between a first and second
• Waveguide layer can be arranged through
• Semiconductor layers can be formed.
• Waveguide layers are in this case arranged together with the active layer between the first and second cladding layers, wherein the first waveguide layer on one of the first cladding layer side facing the active layer and the second waveguide layer on one of the first
• Waveguide layers may preferably be smaller than the
• Refractive index of the active layer and greater than that
• Waveguide be improved. Furthermore, between the active layer and the first cladding layer a
• Semiconductor layer may be present in the form of a cladding layer, which acts at least partially as a cladding layer, but alone is not thick enough to ensure sufficient waveguide without the first cladding layer.
• Coat layer have a transparent conductive oxide.
• Transparent conductive oxides are transparent, electrically conductive materials, usually metal oxides, such as zinc oxide, tin oxide, aluminum tin oxide, cadmium oxide, titanium oxide, indium oxide and indium tin oxide (ITO)
• Metal oxygen compounds such as ZnO, Sn0 2 or ⁇ 2 ⁇ 3 also include ternary metal oxygen compounds, such as Zn 2 Sn0 4 , CdSnO 3, ZnSnO 3, Mgln 2 0 4 , GalnO 3, ⁇ 2 ⁇ 2 ⁇ 5 or In 4 Sn30i 2 or mixtures of different transparent conductive oxides to the group of TCOs.
• ternary metal oxygen compounds such as Zn 2 Sn0 4 , CdSnO 3, ZnSnO 3, Mgln 2 0 4 , GalnO 3, ⁇ 2 ⁇ 2 ⁇ 5 or In 4 Sn30i 2 or mixtures of different transparent conductive oxides to the group of TCOs.
• TCOs do not necessarily correspond to one
• the first cladding layer may also be p- or n-doped. Furthermore, the first cladding layer
• the different TCOs may be deposited in an alternating layer stack on the surface area.
• the first cladding layer can have laterally and / or longitudinally adjacent regions in which different TCOs are arranged.
• Sheath layer structured and has a first structure. This means that the first cladding layer is not considered as
• Sheath layers is the case. Rather, the first one points
• Sheath layer laterally and / or longitudinally adjacent to each other, which differ from each other in terms of their thickness and / or material.
• the thickness of the first cladding layer may be in one or more
• Ranges also have a value of 0.
• the first cladding layer may have a first structure
• the surface region may have at least one first surface subregion and at least one second surface subregion adjoining it directly, and the first cladding layer may be in the first
• the cladding layer can thus have recessed and / or elevated regions, whereby parameters such as thickness, height and depth of regions of the first cladding layer are measured in the vertical direction unless otherwise described
• the first cladding layer may comprise a first material in the first surface subregion and additionally or alternatively a second material in the second surface subregion, wherein the first and second material, both of which may in particular be TCOs, are different from one another.
• the first cladding layer may have only a first material on a first surface subregion of the surface region of the semiconductor layer sequence, while the first cladding layer has only a second material that is different from the first material on a second surface subregion adjoining the first surface subregion.
• the first cladding layer may have only a first material on a first surface subregion, while the first cladding layer may comprise only a first material
• Cladding layer may have on a second surface portion adjacent to the first surface portion portion at least a recessed area in a first material in which a second material is arranged. Furthermore, the first cladding layer can be at least one
• Surface portion is arranged and which is formed by an opening or a gap.
• An opening may in particular by a plane perpendicular to the plane
• Sheath layer surrounded hole in the material of the first
• Sheath layer may be formed, which extends in the vertical direction completely through the first cladding layer.
• a gap may be formed by a trench, two or more by material of the first
• Sheath layer formed regions in the longitudinal and / or lateral direction completely separate from each other.
• the first cladding layer may have a plurality of areas between which voids are present.
• the regions formed by material of the first cladding layer, which are separated by one or more gaps, may, for example, be longitudinal and / or transversal stripes and / or
• a metallic material is applied to at least a portion of the first cladding layer.
• the metallic material may in particular for the electrical connection of the surface of the
• the cladding layer can have at least one empty space in which a metallic material is applied.
• the metallic material can in this case, particularly preferably, extend to the surface region of the semiconductor layer sequence and be in direct contact with the semiconductor layer sequence. Accordingly, an electrical connection of the surface area can also
• the metallic material compared to the material of the first cladding layer, a different contact resistance to the surface region of the
• Semiconductor layer sequence can be adjusted by the choice of materials and the structure of the first cladding layer and the metallic material in the desired manner.
• the metallic material may have an absorption for the light generated in the semiconductor layer sequence during operation.
• the metallic material has a bonding layer or is formed thereby.
• the bonding layer may be applied to the first cladding layer and to the external electrical connection of the
• the bonding layer may enable soldering of the semiconductor laser diode on a heat sink or other support.
• the bonding layer may be provided and arranged, contacted via a bonding wire and electrically
• the bonding layer can in particular at least partial areas or even the entire first
• the metallic material has a metallic contact layer which additionally may be applied to the bonding layer on the first cladding layer.
• the metallic contact layer may in particular be arranged between the semiconductor layer sequence and the bonding layer.
• the Contact layer be structured and have a second structure.
• the second structure may be the same or similar to the first structure of the first cladding layer.
• the metallic contact layer congruent with the
• first and second structures may be different from each other.
• the mode behavior in the active region are selectively controlled. In combination with the metallic material applied thereto, this effect can be adjusted even better, so that the
• Mode behavior can be controlled laterally and longitudinally precisely and in a very wide range.
• Web waveguide structure are controlled in particular such that individual laser modes can be selectively selected and amplified or suppressed. Instead of usual measures like a partial covering of the
• Figures 1A to IE are schematic representations of a
• FIGS. 2A and 2B are schematic representations of
• FIGS. 3A to 3H are schematic representations of
• FIGS 4A to 6B are schematic representations of
• FIGS 7A to 9E are schematic representations of
• FIGS. 1A to IE show an exemplary embodiment of a semiconductor laser diode 100, wherein FIG
• Sectional view with a sectional plane parallel to a lateral direction 91 and to a vertical direction 92 and Figure IC is a sectional view with a sectional plane parallel to the vertical direction 92 and to a
• FIGS. 1B and 1D each show a section of the view of FIG. 1A, while FIG. IE shows a plan view of the web upper side 10 of the semiconductor laser diode 100 in which the above
• Bonded bond layer 15 is not shown.
• the semiconductor laser diode 100 comprises a substrate 1 which has, for example, a growth substrate for one thereon
• the substrate 1 may also be a carrier substrate, onto which a semiconductor layer sequence 2 grown on a growth substrate is transferred after being grown up.
• the substrate 1 may comprise GaN or be GaN on which an InAlGaN compound semiconductor material is based
• Semiconductor layer sequence 2 is grown. This means that the semiconductor layers described below are the
• Semiconductor layer sequence 2 each comprise a semiconductor material of the InAlGaN compound semiconductor material system.
• the substrate 1 and the semiconductor layer sequence 2 are possible. Furthermore, it is also possible that the semiconductor laser diode 100 free from a
• Wax substrate are transposed to an auxiliary substrate. This can preferably be done in p-down technology, preferably on a highly heat-conductive substrate. Possible
• Substrate materials may in particular be silicon carbide,
• the semiconductor layer sequence 2 has an active layer 3, which is part of the semiconductor layer sequence 2 and is suitable for generating light 8 during operation, in particular when the laser threshold is exceeded, and via a laser beam
• the arrangement direction of the layers of the semiconductor layer sequence 2 on one another and of the semiconductor layer sequence 2 on the substrate 1 is referred to here and below as the vertical direction 92.
• the direction perpendicular to the lateral direction 91 and the vertical direction 92, which corresponds to the direction along which the light 8 is emitted, will be referred to here and hereinafter as the longitudinal direction 93.
• a first cladding layer 4 is applied to a surface region 20.
• a metallic material in the form of a bonding layer 15 applied to the electrical contacting of the
• Bonding layer 15 may, for example, one or more
• Have layer stack which may be selected from Au, Pt, Ti, Cr, AI.
• the bonding layer 15 may be formed by a Ti / Pt / Au layer stack.
• Semiconductor laser diode 100 may include another electrode layer for electrically contacting the other side of
• the semiconductor layer sequence 2 may have additional semiconductor layers in addition to the active layer 3. Purely
• the semiconductor contact layer 21 serves the
• Sheath layers, waveguide layers, barrier layers, current spreading layers and / or current limiting layers may be present, which are not shown in each case for ease of illustration. For example, over the first
• Waveguide layer 22 that is approximately between the
• Waveguide layer 22 may be arranged, a semiconductor layer, which in terms of the Refractive index is formed as a cladding layer, but which is too thin to be used alone as a cladding layer in the
• the cladding sublayer and the first cladding layer 4 act together as a cladding layer in the region of the semiconductor layer sequence 2 over the active layer 3. Furthermore, it may also be possible that the
• Semiconductor layer sequence 2 has no semiconductor contact layer 21, so that the first waveguide layer 22 or optionally a jacket sublayer directly adjacent to the first cladding layer 4.
• Semiconductor layer sequence 2 is up to the surface region 20, in which the first cladding layer 4 the
• Passivitationsmaterial 19 covers, for example, an electrically insulating oxide, nitride or oxynitride, such as silicon dioxide, silicon nitride, silicon oxynitride,
• other oxides, nitrides and oxynitrides having one or more materials selected from Al, Ce, Ga, Hf, In, Mg, Nb, Rh, Sb, Si, Sn, Ta, Ti, Zn and Zr are also possible.
• the side surfaces of the semiconductor layer sequence 2 and the substrate 1 form, reflective or partially reflecting layers or
• a ridge waveguide structure 9 by removing a portion of the semiconductor material from the substrate 1 side facing away from the semiconductor layer sequence 2 is formed.
• the ridge waveguide structure 9 extends in the longitudinal direction 93 and has on the side facing away from the substrate 1 on a web top 10, the
• the ridge waveguide structure 9 in the lateral direction 91 is bounded on both sides by web side surfaces 11.
• Web side surfaces 11 are arranged as the next
• Web waveguide structure 9 by completely removing the semiconductor material laterally on both sides next to the web
• a so-called “tripod” may be formed, in which the semiconductor material is removed laterally next to the web only along two grooves, whereby these grooves may extend in particular from the light outcoupling surface 6 to the rear side surface 7.
• a structure known by the term "buried heterostructure" is also possible.
• the bonding layer 15 provided on the upper side of the semiconductor laser diode 100 for the external electrical connection is applied over a large area in the exemplary embodiment shown.
• the bonding layer 15 may be provided and configured such that the semiconductor laser diode 100 is mounted on a heat sink or other external support
• the side of the semiconductor layer sequence 2 facing the first cladding layer 4 may in particular be doped p-doped, such that a so-called p-down mounting of the so-called p-down layer by means of the bonding layer 15
• Semiconductor laser diode 100 can be achieved.
• the first cladding layer 4 is applied in direct contact with the surface region 20 and is structured in the form of a first structure.
• Mantle layer 4 on first portions 41 and second portions 42, which differ from each other.
• the first regions 41 are on first surface subregions 241 of FIG
• Areas 42 are disposed on second surface portions 242 of the surface portion 20.
• the first regions 41 of the first cladding layer 4 are formed in the illustrated embodiment in the form of longitudinally extending strips which are separated from each other by the second regions 42 formed as trenches in the form of trenches.
• the vacancies for example, as Openings may be formed, which are completely surrounded in a plane parallel to the lateral direction 91 and the longitudinal direction 93 by the material of the first cladding layer 4 and thus by first regions 41.
• Areas 41 comprise a transparent material of a material system different from the semiconductor layer sequence 2.
• the first cladding layer 4 is thus free of a material of the InAlGaN material system.
• the first cladding layer may generally be free of material from III-V and II-VI compound semiconductor material systems.
• the transparent has
• Material of the first cladding layer 4 has a refractive index which is lower than the refractive index of the active layer 3. If, as in the embodiment shown, the first waveguide layer 22 is still arranged between the active layer and the first cladding layer 4, then the first one
• Waveguide layer 22 preferably has a refractive index which lies between the refractive index of the active layer 3 and the first cladding layer 4.
• the semiconductor layer sequence 2 over the first waveguide layer 22 may still have a jacket sub-layer, so that in this case the waveguide takes place partially through the cladding sub-layer and partly through the first cladding layer 4.
• the material is the first
• Sheath layer 4 electrically conductive, so that the
• Cladding layer 4 a TCO, preferably for example ITO.
• ITO is generally a mixed oxide with a proportion of greater than or equal to 50% and less than or equal to 99%
• Indium (III) oxide ⁇ 2 ⁇ 3 and in a proportion of greater than or equal to 1% and less than or equal to 50% tin (IV) oxide (SnC> 2 ).
• the content of In 2 Ü 3 is more than 80% and more preferably more than 90%, and the content of SnÜ 2 is less than 20%, and more preferably less than 10%.
• the Sn0 2 component generates impurities in the ⁇ 2 ⁇ 3 crystal lattice, which primarily causes the electrical conductivity of the ITO layer.
• pure tin oxide, pure indium oxide, zinc oxide, magnesium oxide or another material mentioned above in the general part are also possible, for example.
• the metallic material formed by the bonding layer 15 protrudes through the first cladding layer 4 as far as the surface region 20 of FIG.
• some 10 nm may be so
• the light 8 generated in the active layer 3 can have an intensity profile with a maximum in the vertical direction, wherein the intensity at the interface between the semiconductor layer sequence 2 and the first cladding layer 4, in particular first regions 41 of the first cladding layer 4, to a value of greater or equal 1% or greater or equal to 5% or greater or equal to 10% may have dropped.
• the first cladding layer 4 Due to the described structure of the first cladding layer 4, it has first regions 41 and second regions 42, which differ in their optical and electrical properties. While the material of the first cladding layer 4 in the first regions 41 is transparent and thus allows penetration of the laser modes, the second regions 42 of the first cladding layer 4 are characterized in that they are in the first
• the bonding layer 15 can adjoin the semiconductor layer sequence 2, for example with a Ti layer in the second surface subregions 242. Since Ti has a higher contact resistance to the semiconductor contact layer 21, which is based on InAlGaN as described above and may be, for example, p + -GaN, has as the ITO, the local
• FIG. 1B is a typical one
• Wide stripe laser diodes without ridge waveguide structure are formed.
• the surface region 20, on which the structured first cladding layer 4 is applied, is thereby replaced by that part of the upper side of the
• the further figures show semiconductor laser diodes with ridge waveguide structure 9, the features described also apply to semiconductor laser diodes without
• FIGS. 3A to 3H Exemplary embodiments of various first structures of the first cladding layer 4 on the surface region 20 are shown schematically in FIGS. 3A to 3H
• Distributions of the first and second regions 41, 42 may also be combined with each other, or the arrangement of the first and second regions 41, 42 may also be reversed. Furthermore, the structures of the first cladding layer 4 described in connection with FIGS. 3A to 3H also apply to the remaining exemplary embodiments. In the figures 3A, 3B and 3C are as already in
• Embodiment of Figures 1A to IE shown first portions 41 which are web-shaped as extending in the longitudinal direction strips which are separated by trench formed second regions 42 from each other.
• the first area can reach up to edges of the
• first regions 41 may have the same or different widths in the lateral direction.
• distances 94, 95 and 96 of the first regions 41 to the edges of the surface region 20 and to one another as well as the strip width 97 in the lateral direction are furthermore plotted.
• the values given below also apply to the first structures of the first cladding layer 4 shown in the other figures.
• the distance 94 of the first regions 41 to the facets are greater than or equal to 2 ym or greater than or equal to 5 ym or particularly preferably greater than or equal to 10 ym and less than or equal to 200 ym or particularly preferably less than or equal to 50 ym, advantageous values for the distance 95 to the sides of the surface area 20, in the case of
• Web waveguide structure thus to the web side surfaces are greater than or equal to 0 ym and less than or equal to 100 ym or less than or equal to 5 ym, or more preferably less than or equal to 3 ym.
• Spacing 96 of immediately adjacent first contact regions 241 are greater than or equal to 1 ym and less than or equal to 30 ym.
• Advantageous values for the lateral width 97 are greater than or equal to 5 ym and less than or equal to 30 ym. Typical dimensions of the surface area 20, in the case of a
• Web waveguide structure so the web top, for the length in the longitudinal direction, a range of greater than or equal to 200 ym or preferably greater than or equal to 400 ym or more preferably greater than or equal to 600 ym and less than or equal to 5 mm or preferably less than or equal to 3 mm or more preferably less than or equal to 2 mm, further for the width in the lateral direction, a range of greater than or equal to 1 ym and less than or equal to 300 ym.
• FIG. 3D shows an embodiment in which the lateral width of the first region 41 varies, ie, as shown, for example, decreases from the facets in the longitudinal direction towards the center. This allows the
• Resonators are set independently.
• Variants having one, two or three first regions 41 may for example also comprise more first regions 41, for example in the form of themselves longitudinally
• the first cladding layer 4 may also have at least a first and a second region 41, 42, each containing a material and the different
• first cladding layer 4 may have formed as elevations and depressions first and second portions 41 42.
• FIGS. 4A to 4C show exemplary embodiments corresponding to the exemplary embodiment of FIGS. 1A to IE, in which the second regions 42 have the material of the first cladding layer 4 with a smaller thickness than the first regions 41.
• Cladding layer 4 first and second portions 41, 42 which differ with respect to the material forming the regions 41, 42. So in a first
• Surface part 241 a first material and in a second surface portion 242 a second material may be applied, which differ from each other. As shown in Fig. 5A, those in previous Figs Embodiments designed as voids second areas 42 may be filled with another material. Likewise, as shown in Figure 5B, as depressions
• the different materials can be, for example, different TCOs or differently doped TCOs.
• the released in the previous embodiments or differently doped TCOs can be, for example, different TCOs or differently doped TCOs.
• Recessed areas of the first cladding layer 4 are filled with a TCO with, for example, different composition or doping. As a result, both the electrical and the optical properties of the first cladding layer 4 are modulated over the surface region 20. Depending on the arrangement of the regions 41, 42, the different absorption coefficients produced thereby lead to a different, depending on the arrangement of the regions 41, 42 for lateral and / or longitudinal modes of different order
• first regions 41 as well as alternatively or additionally also second regions 42 may be different
• first regions 41 may be formed by such layer stacks.
• FIG. 6B only a few first regions 41 may be formed by such layer stacks during one or more of the layers several further first areas 41 are formed by only one TCO.
• FIGS. 7A to 9E show further exemplary embodiments of semiconductor laser diodes 100 in which the
• Mantle layer 4 directly on the surface portions 242 a metallic contact layer 14 are applied, which has, for example, a lower or equal electrical contact resistance compared to the material of the first cladding layer 4, so that a good
• the electrical contact layer 14 for this purpose may comprise or be one or more materials selected from Pd, Pt and Rh.
• the electrical contact layer 14 may include or be made of a material having a higher electrical contact resistance than the material of the first cladding layer 4, so that a poor current injection in combination with a high optical absorption in these areas can be achieved.
• the electrical contact layer 14 may for this purpose comprise or be composed of one or more materials selected from Ni, Ti, TiWN, Ag.
• Areas 41 and ZnO in second areas 42 can be achieved.
• a metallic contact layer 14 may also be provided on the material of the first cladding layer 4
• the metallic contact layer 14 may in this case preferably comprise or be one or more materials selected from Ti, Pt, Pd, Ni, Cr and Rh.
• Contact layer 14 may for example be applied to the material of the first cladding layer 4 and with this
• the contact layer 14 may be disposed only on the first portions 41, as shown in Figure 7B.
• the first cladding layer 4 and in particular the first regions 41 may also be wholly or partially covered and enclosed by the contact layer 14, as shown in FIG. 7C, whereby an even lower series resistance can be achieved. If the contact layer 14 is intentionally applied only to some specific regions 41 of the first cladding layer 4, as shown in FIG. 7D, the current injection can thereby be adjusted even more finely.
• FIGS. 8A to 8H show exemplary embodiments of FIG
• the contact layer 14 can also be a second
• the first cladding layer is described with only one transparent material or two different transparent materials, more than two different materials may also be present in corresponding structured regions.
• the features described in connection with the previous exemplary embodiments thus also apply equally to a first cladding layer with more than two different materials.

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• 2017
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