CN114207815A - 色彩转换层的原位固化 - Google Patents
色彩转换层的原位固化 Download PDFInfo
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Abstract
一种制作多色彩显示器的方法包括以下步骤:在显示器上方分配包括色彩转换剂的光可固化流体,显示器具有背平面和与背平面的背平面电路系统电气整合的发光二极管的阵列;在发光二极管的阵列中启动复数个发光二极管,以照射并且固化第一光可固化流体,以在第一复数个发光二极管中的每一者上方形成色彩转换层,以将来自复数个发光二极管的光转换成第一色彩的光;和移除第一光可固化流体的未固化的剩余物。以具有用于另一色彩的不同色彩转换组分的流体重复此工艺。
Description
技术领域
本公开内容总体涉及微LED显示器的制作。
背景
发光二极管(LED)面板使用LED的阵列,其中单独LED提供能够单独控制的像素元件。这样的LED面板可用于计算机、触摸面板装置、个人数字助理(PDA)、手机、电视监控器和类似者。
基于III-V族半导体技术使用微米级LED的LED面板(也称为微LED)与OLED相比具有许多优点,例如较高能量效率、亮度和寿命,以及在显示器堆叠结构(stack)中较少的材料层,显示器堆叠结构中较少的材料层可简化制造。然而,存在对于微LED面板制作的挑战。具有不同色彩发射的微LED(例如,红、绿和蓝像素)需要通过分开的工艺在不同基板上制作。将微LED装置的多种色彩整合在单个面板上需要捡起和放置步骤,以从微LED的原始供体(donor)基板将微LED装置传送至目标基板。此举通常牵涉LED结构或制作工艺的修改,例如引入牺牲层以易于裸片(die)释放。此外,对放置准确度的严格要求(例如,小于1um)限制产量、最终成品率(final yield)中的任一者或两者。
绕过捡起和放置步骤的替代方案是在以单色LED制作的基板上,于特定像素地点处选择性沉积色彩转换剂(例如,量子点、纳米结构、荧光材料或有机物质)。单色LED可产生相对短波长光,例如,紫或蓝光,并且色彩转换剂可将此短波长光转换成更长波长光,例如红或绿光,用于红或绿像素。色彩转换剂的选择性沉积可使用高分辨率阴影掩模或可控制的喷墨或气溶胶喷射(aerosol jet)印刷来实行。
概述
一种制作多色彩显示器的方法包括以下步骤:在显示器上方分配包括第一色彩转换剂的第一光可固化流体,显示器具有背平面和与背平面的背平面电路系统电气整合的发光二极管的阵列;在发光二极管的阵列中启动第一复数个发光二极管,以照射并且固化第一光可固化流体,以在第一复数个发光二极管的每一者上方形成第一色彩转换层,以将来自第一复数个发光二极管的光转换成第一色彩的光;移除第一光可固化流体的未固化的剩余物;此后,在显示器上方分配包括第二色彩转换剂的第二光可固化流体;在发光二极管的阵列中启动第二复数个发光二极管,以照射并且固化第二光可固化流体,以在第二复数个发光二极管的每一者上方形成第二色彩转换层,以将来自第二复数个发光二极管的光转换成不同的第二色彩的光;和移除第二光可固化流体的未固化的剩余物。
实施方式可包括以下特征中的一个或多个。
可在显示器上方分配第三光可固化流体。第三光可固化流体可包括第三色彩转换剂。在发光二极管的阵列中可启动第三复数个发光二极管,以照射并且固化第三光可固化流体,以在第三复数个发光二极管的每一者上方形成第三色彩转换层,以将来自第三复数个发光二极管的光转换成不同的第三色彩的光。可移除第三光可固化流体的未固化的剩余物。
发光二极管的阵列的发光二极管可经配置以产生紫外光。第一色彩、第二色彩和第三色彩可选自蓝、绿和红。第一色彩可为蓝色,第二色彩可为绿色,并且第三色彩可为红色。
发光二极管的阵列可包括第三复数个发光二极管,并且发光二极管的阵列的发光二极管可经配置以产生不同的第三色彩的光。不需要在第三复数个发光二极管上方形成色彩转换层。发光二极管的阵列的发光二极管可经配置以产生蓝或紫光。第一色彩和第二色彩可选自绿和红。第一色彩可为绿色,并且第二色彩可为红色。
分配第一光可固化流体和分配第二光可固化流体的步骤可包括以下项中的一者或多者:旋涂、浸渍、喷涂、或喷墨工艺。移除第一光可固化流体和第二光可固化流体的未固化的剩余物的步骤可包括以下项中的一者或多者:清洗和溶解。
在背平面上,于发光二极管的阵列的邻近发光二极管之间,可形成复数个隔绝壁。在启动第一复数个发光二极管期间,隔绝壁可阻挡来自第一复数个发光二极管的照射到达第二复数个发光二极管。隔绝壁可由光刻胶形成。
第一光可固化流体和第二光可固化流体中的至少一者可包括溶剂。溶剂可蒸发。在发光二极管的阵列上方可形成紫外阻挡层。
发光二极管的阵列的发光二极管可为微LED。
在另一方面中,一种多色彩显示器包括:背平面,背平面具有背平面电路系统;微LED的阵列,与背平面的背平面电路系统电气整合;第一色彩转换层,在第一复数个发光二极管中的每一者上方;第二色彩转换层,在第二复数个发光二极管中的每一者上方;和复数个隔绝壁,将阵列的邻近微LED分开。阵列的微LED经配置以产生相同波长范围的照射,第一色彩转换层将照射转换成第一色彩的光,并且第二色彩转换层将照射转换成不同的第二色彩的光。
实施方式可选地提供(并且不限于)以下优点中的一个或多个。
处理步骤(涂布、原位固化和清洗)支持大规格(format)和高产量的操作。因此,色彩转换剂可选择性地形成于微LED的阵列上方,而具有更高的成品率和产量。此举可允许多色彩微LED显示器以商业上可行的方式制作。可更容易地制作柔性和/或可拉伸显示器。原位固化可自动地确保对准准确度。
主体聚合物(host polymer)可用作用于裸片保护的钝化层。主体聚合物也有可能提供其他功能,例如,当以功能性成分适当地掺杂时的光学功能。
其他方面、特征和优点将从说明书与附图并且从权利要求书而清楚易懂。
以下说明各种实施方式。应考量一个实施方式的元件和特征可有益地并入其他实施方式中而无须进一步说明。
附图简要说明
图1是已与背平面整合的微LED阵列的示意性俯视图。
图2A是微LED阵列的部分的示意性俯视图。
图2B是来自图2A的微LED阵列的部分的示意性截面图。
图3A-图3H图示在微LED阵列上方选择性地形成色彩转换剂(CCA)层的方法。
图4A-图4C图示光可固化流体的配方。
图5A-图5E图示在背平面上制作微LED阵列和隔绝壁的方法。
图6A-图6D图示在背平面上制作微LED阵列和隔绝壁的另一方法。
在各图中类似的参考符号代表类似的元件。
具体说明
如上所述,可使用高分辨率阴影掩模或可控制的喷墨或气溶胶喷射印刷来实行色彩转换剂的选择性沉积。不幸地,阴影掩模倾向于具有对准准确度和可缩放性(scalability)的问题,而喷墨和气溶胶喷射技术遭受分辨率(喷墨)、准确度(喷墨)和产量(气溶胶喷射)问题。为了制造微LED显示器,需要新的技术来精确且经济地将用于不同色彩的色彩转换剂提供至基板上的不同像素上,基板例如是大面积基板或柔性基板。
可解决这些问题的一种技术是将含有用于第一色彩的色彩转换剂(CCA)的光可固化流体的层涂布在具有单色微LED的阵列的基板上,接着开启所选择的LED以在所选择的子像素的附近触发原位聚合并且固定(immobilize)CCA。可移除未选择的子像素上方未固化的流体,并且接着可利用用于不同色彩的CCA来重复相同工艺直到在晶片上所有的子像素都以期望色彩的CCA覆盖。此技术可克服对准准确度、产量和可缩放性的挑战。
图1图示包括单独微LED 14(见图2A和图2B)的阵列12的微LED显示器10,微LED 14设置在背平面16上。微LED 14已与背平面电路系统18整合,使得每个微LED 14可单独寻址(address)。举例而言,背平面电路系统18可包括TFT有源矩阵阵列(具有用于每个微LED的薄膜晶体管和储存电容器(未图示))、列地址和行地址线18a、列和行驱动器18b等等,以驱动微LED14。或者,微LED 14可通过在背平面电路系统18中的无源矩阵驱动。背平面16可使用常规CMOS工艺制作。
图2A和图2B图示具有单独微LED 14的微LED阵列12的部分12a。所有的微LED 14由相同结构制作,以便产生相同波长范围(这可称为“单色”微LED)。举例而言,微LED 14可产生在紫外(UV)范围、例如近紫外范围中的光。举例而言,微LED 14可产生在365至405nm范围中的光。如另一范例,微LED 14可产生在紫或蓝范围中的光。微LED可产生具有20至60nm光谱带宽的光。
图2B图示可提供单个像素的微LED阵列的部分。假设微LED显示器为三色显示器,每个像素包括三个子像素,每种色彩一个子像素,例如,蓝、绿和红色彩通道各一个子像素。如此,像素可包括三个微LED 14a、14b、14c。举例而言,第一微LED 14a可对应于蓝子像素,第二微LED 14b可对应于绿子像素,并且第三微LED 14c可对应于红子像素。然而,以下所讨论的技术可应用至使用大量色彩的微LED显示器,大量色彩例如是四种或更多种色彩。在此情况中,每个像素可包括四个或更多个微LED,其中每个微LED对应于相应的色彩。此外,以下所讨论的技术可应用至使用仅两个色彩的微LED显示器。
一般而言,单色微LED 14可产生在某个波长范围中的光,该波长范围具有波长不大于意图用于显示器的最高频率色彩的波长的峰值,所述光例如是紫或蓝光。色彩转换剂可将此短波长光转换成较长波长光,例如,用于红或绿子像素的红或绿光。若微LED产生UV光,则色彩转换剂可用于将UV光转换成用于蓝子像素的蓝光。
垂直隔绝壁20形成于相邻微LED之间。隔绝壁提供光学隔绝,以帮助使聚合局部化(localize)并且在以下所讨论的原位聚合期间减少光学串扰。隔绝壁20可为光刻胶或金属,并且可通过常规平版印刷术工艺来沉积。如图2A中所显示,壁20可形成矩形阵列,其中每个微LED 14在由壁20限定的单独凹槽(recess)22中。其他阵列几何形状(例如六角形或偏移矩形(offset rectangular)阵列)也是可能的。在以下更详细地讨论用于背平面整合和隔绝壁形成的可能工艺。
壁可具有约3至20μm的高度H。壁可具有约2至10μm的宽度W。高度H可大于宽度W,例如,壁可具有1.5:1至5:1的纵横比(aspect ratio)。壁的高度H足以阻挡来自一个微LED的光到达邻近微LED。
图3A-图3H图示在微LED阵列上方选择性地形成色彩转换剂(CCA)层的方法。初始,如图3A中所显示,第一光可固化流体30a沉积在已与背平面电路系统整合的微LED 14的阵列上方。第一光可固化流体30a的深度D可大于隔绝壁20的高度H。
参照图4A,第一光可固化流体30a至少包括可交联群组32、用于在对应于微LED 14的发射的波长的照射下触发聚合的光引发剂34、和色彩转换剂36a。
当遭受聚合时,可交联群组32将增加流体30a的粘度,例如,流体30a可固体化(solidify)或形成凝胶状网络结构。可交联群组32可由单体提供,当固化时这些单体形成聚合物,单体例如是丙烯酸酯、甲基丙烯酸酯和丙烯酰胺。可交联群组32可通过负光刻胶提供,负光刻胶例如是SU-8光刻胶。
光引发剂34的范例包括Irgacure 184、Irgacure 819、Darocur 1173、Darocur4265、Dacocur TPO、Omnicat 250和Omnicat 550。
色彩转换剂36a是可将来自微LED 14的较短波长光转换成对应于三个色彩中的一者的较长波长光的材料。在通过图3A-图3H图示的范例中,色彩转换剂36将来自微LED 14的UV光转换成蓝光。色彩转换剂36可包括量子点、纳米结构、有机或无机荧光分子或其他适合的材料。
可选地,第一光可固化流体30a可包括溶剂37,例如,水、乙醇、甲苯、或甲乙酮、或上述项的组合。溶剂可为有机或无机的。溶剂可经选择以提供第一光可固化流体30a的期望表面张力和/或粘度。溶剂还可改善其他组分的化学稳定度。
可选地,第一光可固化流体30a可包括一种或多种其他功能成分38。如一个范例,功能成分可影响色彩转换层的光学特性。举例而言,功能成分可包括具有足够高折射率的纳米颗粒,使得色彩转换层作用为调整输出光的光学路径的光学层,例如提供微透镜。替代地或附加地,纳米颗粒可具有经选择的折射率,使得色彩转换层作用为减少总反射损失的光学层,由此改善光提取(extraction)。如另一范例,功能成分可以是用于调整流体30a的表面张力的表面活性剂。
回到图3A,第一光可固化流体30a可通过旋涂、浸渍、喷涂或喷墨工艺沉积在显示器上于微LED阵列上方。喷墨工艺在第一光可固化流体30a的消耗方面可更有效率。
下一步,如图3B中所显示,使用背平面16的电路系统以选择性地启动第一复数个微LED 14a。此第一复数个微LED 14a对应于第一色彩的子像素。具体而言,第一复数个微LED 14a对应于用于要通过在光可固化流体30a中的色彩转换组分来产生的光的色彩的子像素。举例而言,假设在流体30a中的色彩转换组分将来自微LED 14的光转换成蓝光,则仅开启对应于蓝子像素的那些微LED 14a。因为微LED阵列已与背平面电路系统18整合,可供应功率至微LED显示器10并且可通过微处理器施加控制信号以选择性地开启微LED 14a。
参照图3B和图3C,第一复数个微LED 14a的启动产生照射A(见图3B),这造成第一光可固化流体30a的原位固化,以在每个启动的微LED 14a上方形成第一固体化色彩转换层40a(见图3C)。简言之,将流体30a固化以形成色彩转换层40a,但仅在所选择的微LED 14a上。举例而言,用于转换成蓝光的色彩转换层40a可形成于每个微LED 14a上。
在一些实施方式中,固化为自我限制工艺。举例而言,来自微LED 14a的照射(例如,UV照射)可具有到光可固化流体30a中受限的穿透深度。如此,尽管图3B图示照射A到达光可固化流体30a的表面,但这不是必要的。在一些实施方式中,来自所选择的微LED 14a的照射不到达其他微LED 14b、14c。在此情况中,隔绝壁20可以不是必要的。
然而,若介于微LED 14之间的间隔足够小,则隔绝壁20可肯定地阻挡来自所选择的微LED 14a的照射A到达会处于来自其他微LED的照射的穿透深度内的这些其他微LED上方的区域。还可例如仅作为防止照射到达其他微LED上方的区域的保险而包括隔绝壁20。
针对用于光可固化流体30a的适当光子剂量,可选择第一复数个微LED14a的驱动电流和驱动时间。用于固化流体30a的每个子像素的功率不必与在微LED显示器10的显示模式中每个子像素的功率相同。举例而言,用于固化模式的每个子像素的功率可比用于显示模式的每个子像素的功率更高。
参照图3D,当完成固化且形成第一固体化的色彩转换层40a时,从显示器10移除残留未固化的第一光可固化流体。此举留下暴露的其他微LED14b、14c用于下一次沉积步骤。在一些实施方式中,仅以溶剂(例如,水、乙醇、甲苯、或甲乙酮、或上述项的组合)从显示器清洗未固化的第一光可固化流体30a。若光可固化流体30a包括负光刻胶,则清洗流体可包括用于光刻胶的光刻胶显影剂。
参照图3E和图4B,重复以上关于图3A-图3D所述的处置,但利用第二光可固化流体30b且启动第二复数个微LED 14b。在清洗之后,于第二复数个微LED 14b的每一者上方形成第二色彩转换层40b。
第二光可固化流体30b类似于第一光可固化流体30a,但包括色彩转换剂36b以将来自微LED 14的较短波长光转换成不同的第二色彩的较长波长光。第二色彩可为例如绿色。
第二复数个微LED 14b对应于第二色彩的子像素。具体而言,第二复数个微LED14b对应于用于要通过在第二光可固化流体30b中的色彩转换组分产生的光的色彩的子像素。举例而言,假设在流体30a中的色彩转换组分将来自微LED 14的光转换成绿光,则仅开启对应于绿子像素的那些微LED 14b。
参照图3F和图4C,可选地仍再次重复以上关于图3A-图3D所述的处置,但利用第三光可固化流体30c且启动第三复数个微LED 14c。在清洗之后,于第三复数个微LED 14c的每一者上方形成第三色彩转换层40c。
第三光可固化流体30c类似于第一光可固化流体30a,但包括色彩转换剂36c以将来自微LED 14的较短波长光转换成不同的第三色彩的较长波长光。第三色彩可为例如红色。
第三复数个微LED 14b对应于第三色彩的子像素。具体而言,第三复数个微LED14b对应于用于要通过在第三光可固化流体30b中的色彩转换组分产生的光的色彩的子像素。举例而言,假设在流体30a中的色彩转换组分将来自微LED 14的光转换成红光,则仅开启对应于红子像素的那些微LED 14b。
在图3A-图3F中图示的此特定范例中,沉积色彩转换层40a、40b、40c以用于每个色彩子像素。此举例如当微LED产生紫外光时是需要的。
然而,微LED 14可产生蓝光而非UV光。在此情况中,可省略通过含有蓝色色彩转换剂的光可固化流体来涂布显示器10的步骤,且工艺可使用用于绿和红子像素的光可固化流体来实行。留下一种复数个微LED不具有色彩转换层,例如,如在图3E中所显示的。不实行由图3F所显示的工艺。举例而言,第一光可固化流体30a可包括绿CCA且第一复数个14a微LED可对应于绿子像素,而第二光可固化流体30b可包括红CCA且第二复数个14b微LED可对应于红子像素。
假设流体30a、30b、30c包括溶剂,某些溶剂可被捕集于色彩转换层40a、40b、40c中。参照图3G,此溶剂可蒸发,例如,通过将微LED阵列暴露至热,例如通过IR灯。从色彩转换层40a、40b、40c蒸发溶剂可造成层的收缩,使得最终层更薄。
移除溶剂且收缩色彩转换层40a、40b、40c可增加色彩转换剂(例如量子点)的浓度,因此提供更高色彩转换效率。另一方面,包括溶剂允许光可固化流体的其他组分的化学配方具有更大的灵活性(flexibility),例如,允许色彩转换剂或可交联组分具有更大的灵活性。
可选地,如图3H中所显示,UV阻挡层50可沉积于所有微LED 14的顶部上。UV阻挡层50可阻挡未被色彩转换层40吸收的UV光。UV阻挡层50可为布拉格反射器(Braggreflector),或可仅为对UV光选择性吸收的材料。布拉格反射器可将UV光朝向微LED 14反射回去,因此增加能量效率。
图5A-图5E图示在背平面上制作微LED阵列和隔绝壁的方法。参照图5A,工艺利用将提供微LED阵列的晶片100而开始。晶片100包括基板102(例如,硅或蓝宝石晶片),在基板102上设置具有第一掺杂的第一半导体层104、有源层106和具有第二相反掺杂的第二半导体层108。举例而言,第一半岛体层104可为n掺杂的氮化镓(n-GaN)层,有源层106可为多量子阱(MQW)层106,且第二半导体层107可为p掺杂的氮化镓(p-GaN)层108。
参照图5B,蚀刻晶片100以将层104、106、108划分成单独的微LED 14,包括对应于第一色彩、第二色彩和第三色彩的第一复数个微LED 14a、第二复数个微LED 14b和第三复数个微LED 14c。此外,可沉积导电触点110。举例而言,p型触点110a和n型触点110b可分别沉积于n-GaN层104和p-GaN层108上。
类似地,制作背平面16以包括电路系统18以及电气触点120。电气触点120可包括第一触点120a(例如,驱动触点)和第二触点120b(例如,接地触点)。
参照图5C,微LED晶片100与背平面16对准并且放置为与背平面16接触。举例而言,第一触点110a可接触第一触点120a,且第二触点110b可接触第二触点120b。微LED晶片100可降低至与背平面接触,或反之亦然。
下一步,参照图5D,移除基板102。举例而言,可通过抛光基板102移除硅基板,例如,通过化学机械抛光。如另一范例,可通过激光剥离(liftoff)工艺移除蓝宝石基板。
最终,参照图5E,在背平面16(微LED 14已附接至背平面16)上形成隔绝壁20。隔绝壁可通过常规工艺形成,例如光刻胶的沉积、通过光刻进行的光刻胶的图案化、和用于移除对应于凹槽22的光刻胶部分的显影。所得到的结构可接着使用作为针对图3A-图3H所述处理的显示器10。
图6A-图6D图示在背平面上制作微LED阵列和隔绝壁的另一方法。此工艺可类似于以上针对图5A-图5E所讨论的工艺,除了以下所述者。
参照图6A,工艺类似于以上所述的工艺而开始,具有将提供微LED阵列的晶片100和背平面16。
参照图6B,在背平面16(微LED 14尚未附接到背平面16)上形成隔绝壁20。
此外,蚀刻晶片100以将层104、106、108划分成单独的微LED 14,包括第一复数个微LED 14a、第二复数个微LED 14b和第三复数个微LED 14c。然而,通过此蚀刻工艺形成的凹槽130足够深以容纳隔绝壁20。举例而言,可持续蚀刻使得凹槽130延伸至基板102中。
下一步,如图6C中所显示,微LED晶片100与背平面16对准并且放置为与背平面16接触(或反之亦然)。隔绝壁20装配至凹槽130中。此外,微LED的触点110电气连接至背平面16的触点120。
最终,参考图6D,移除基板102。此举在背平面16上留下微LED 14和隔绝壁20。所得到的结构可接着使用作为针对图3A-图3H所述处理的显示器10。
已使用诸如垂直和横向的定位的词汇。然而,应理解这样的词汇代表相对定位,而非关于重力的绝对定位。举例而言,横向是平行于基板表面的方向,而垂直是正交于基板表面的方向。
本领域技术人员将理解以上范例是示例性的而非限制。举例而言:
尽管以上说明聚焦在微LED上,本技术可应用至具有其他类型的发光二极管的其他显示器,特别是具有其他微尺度(micro-scale)发光二极管的显示器,例如小于约10微米跨度的LED。
尽管以上说明假设色彩转换层形成的顺序为蓝色、接着绿色、接着红色,其他顺序也是可能的,例如蓝色、接着红色、接着绿色。此外,其他色彩也是可能的,例如橘色和黄色。
应理解,在不脱离本公开内容的精神和范围的情况下,可作各种修改。
Claims (15)
1.一种制作多色彩显示器的方法,包含以下步骤:
在显示器上方分配第一光可固化流体,所述显示器具有背平面、和与所述背平面的背平面电路系统电气整合的发光二极管的阵列,所述第一光可固化流体包括第一色彩转换剂;
在所述发光二极管的阵列中启动第一复数个发光二极管,以照射并且固化所述第一光可固化流体,以在所述第一复数个发光二极管的每一者上方形成第一色彩转换层,以将来自所述第一复数个发光二极管的光转换成第一色彩的光;
移除所述第一光可固化流体的未固化的剩余物;
此后,在所述显示器上方分配第二光可固化流体,所述第二光可固化流体包括第二色彩转换剂;
在所述发光二极管的阵列中启动第二复数个发光二极管,以照射并且固化所述第二光可固化流体,以在所述第二复数个发光二极管的每一者上方形成第二色彩转换层,以将来自所述第二复数个发光二极管的光转换成不同的第二色彩的光;和
移除所述第二光可固化流体的未固化的剩余物。
2.如权利要求1所述的方法,进一步包含以下步骤:
在所述显示器上方分配第三光可固化流体,所述第三光可固化流体包括第三色彩转换剂;
在所述发光二极管的阵列中启动第三复数个发光二极管,以照射并且固化所述第三光可固化流体,以在所述第三复数个发光二极管的每一者上方形成第三色彩转换层,以将来自所述第三复数个发光二极管的光转换成不同的第三色彩的光;和
移除所述第三光可固化流体的未固化的剩余物。
3.如权利要求2所述的方法,其中所述第一色彩、第二色彩和第三色彩选自蓝、绿和红。
4.如权利要求2所述的方法,其中所述发光二极管的阵列的发光二极管经配置以产生紫外光。
5.如权利要求1所述的方法,其中所述发光二极管的阵列包括第三复数个发光二极管,并且所述发光二极管的阵列的发光二极管经配置以产生不同的第三色彩的光。
6.如权利要求5所述的方法,其中在所述第三复数个发光二极管上方不形成色彩转换层。
7.如权利要求6所述的方法,其中所述发光二极管的阵列的所述发光二极管经配置以产生蓝或紫光。
8.如权利要求7所述的方法,其中所述第一色彩和第二色彩选自绿和红。
9.如权利要求1所述的方法,其中复数个隔绝壁形成在所述背平面上且在所述发光二极管的阵列的邻近发光二极管之间。
10.如权利要求9所述的方法,其中在启动所述第一复数个发光二极管期间,所述隔绝壁阻挡来自所述第一复数个发光二极管的照射到达所述第二复数个发光二极管。
11.如权利要求10所述的方法,其中所述隔绝壁包含光刻胶。
12.如权利要求1所述的方法,其中所述第一光可固化流体和所述第二光可固化流体中的至少一者包括溶剂,且所述方法进一步包含以下步骤:蒸发所述溶剂。
13.如权利要求1所述的方法,包含以下步骤:在所述发光二极管的阵列上方形成紫外阻挡层。
14.一种制作多色彩显示器的方法,包含以下步骤:
在显示器上方分配第一光可固化流体,所述显示器具有背平面、和与所述背平面的背平面电路系统电气整合的发光二极管的阵列,所述第一光可固化流体包括第一色彩转换剂;
在所述发光二极管的阵列中启动第一复数个发光二极管,以照射并且固化所述第一光可固化流体,以在所述第一复数个发光二极管的每一者上方形成第一色彩转换层,以将来自所述第一复数个发光二极管的光转换成第一色彩的光;
移除所述第一光可固化流体的未固化的剩余物;
此后,在所述显示器上方分配第二光可固化流体,所述第二光可固化流体包括第二色彩转换剂;
在所述发光二极管的阵列中启动第二复数个发光二极管,以照射并且固化所述第二光可固化流体,以在所述第二复数个发光二极管的每一者上方形成第二色彩转换层,以将来自所述第二复数个发光二极管的光转换成不同的第二色彩的光;和
移除所述第二光可固化流体的未固化的剩余物;
此后,在所述显示器上方分配第三光可固化流体,所述第三光可固化流体包括第三色彩转换剂;
在所述发光二极管的阵列中启动第三复数个发光二极管,以照射并且固化所述第三光可固化流体,以在所述第三复数个发光二极管的每一者上方形成第三色彩转换层,以将来自所述第三复数个发光二极管的光转换成不同的第三色彩的光;和
移除所述第三光可固化流体的未固化的剩余物,
其中所述第一色彩、第二色彩和第三色彩选自蓝、绿和红。
15.一种多色彩显示器,包含:
背平面,具有背平面电路系统;
微LED的阵列,与所述背平面的背平面电路系统电气整合,所述阵列的所述微LED经配置以产生相同波长范围的照射;
第一色彩转换层,在第一复数个发光二极管的每一者上方,以将来自所述第一复数个发光二极管的所述照射转换成第一色彩的光;
第二色彩转换层,在第一复数个发光二极管的每一者上方,以将来自所述第一复数个发光二极管的所述照射转换成不同的第二色彩的光;和
复数个隔绝壁,将所述阵列的邻近微LED分开。
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CN108257949B (zh) | 2018-01-24 | 2020-02-07 | 福州大学 | 可实现光效提取和色彩转换微米级led显示装置及制造方法 |
TWI827639B (zh) * | 2018-08-09 | 2024-01-01 | 美商凱特伊夫公司 | 具有光耦合及轉換層的發光二極體與形成像素之方法 |
KR102602673B1 (ko) * | 2018-10-12 | 2023-11-17 | 삼성디스플레이 주식회사 | 표시 장치 및 표시 장치 제조 방법 |
WO2020100295A1 (ja) | 2018-11-16 | 2020-05-22 | 堺ディスプレイプロダクト株式会社 | マイクロledデバイスおよびその製造方法 |
CN109638138B (zh) | 2018-12-03 | 2021-01-15 | 惠州市华星光电技术有限公司 | 一种led显示屏制备方法及led显示屏 |
US11094530B2 (en) | 2019-05-14 | 2021-08-17 | Applied Materials, Inc. | In-situ curing of color conversion layer |
US11239213B2 (en) | 2019-05-17 | 2022-02-01 | Applied Materials, Inc. | In-situ curing of color conversion layer in recess |
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2019
- 2019-05-14 US US16/412,222 patent/US11094530B2/en active Active
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2020
- 2020-05-01 TW TW112111040A patent/TW202332036A/zh unknown
- 2020-05-01 TW TW110128690A patent/TWI799933B/zh active
- 2020-05-01 TW TW109114709A patent/TWI739412B/zh active
- 2020-05-14 WO PCT/US2020/032850 patent/WO2020232229A1/en unknown
- 2020-05-14 KR KR1020217040462A patent/KR20210153162A/ko not_active Application Discontinuation
- 2020-05-14 EP EP20805153.2A patent/EP3970189A4/en active Pending
- 2020-05-14 JP JP2021566955A patent/JP7300009B2/ja active Active
- 2020-05-14 CN CN202080035884.8A patent/CN114207815A/zh active Pending
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- 2023-06-16 JP JP2023099192A patent/JP2023140353A/ja active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113380769A (zh) * | 2020-06-16 | 2021-09-10 | 友达光电股份有限公司 | 显示装置 |
CN113380769B (zh) * | 2020-06-16 | 2023-06-02 | 友达光电股份有限公司 | 显示装置 |
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US11094530B2 (en) | 2021-08-17 |
KR20210153162A (ko) | 2021-12-16 |
TWI739412B (zh) | 2021-09-11 |
US20230352632A1 (en) | 2023-11-02 |
TW202332036A (zh) | 2023-08-01 |
JP7300009B2 (ja) | 2023-06-28 |
JP2023140353A (ja) | 2023-10-04 |
US20210358742A1 (en) | 2021-11-18 |
JP2022533054A (ja) | 2022-07-21 |
TW202145553A (zh) | 2021-12-01 |
TW202107697A (zh) | 2021-02-16 |
US11888093B2 (en) | 2024-01-30 |
WO2020232229A1 (en) | 2020-11-19 |
US20200365774A1 (en) | 2020-11-19 |
TWI799933B (zh) | 2023-04-21 |
EP3970189A1 (en) | 2022-03-23 |
EP3970189A4 (en) | 2023-05-31 |
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