TW202114079A - 選擇性釋離及傳遞微裝置 - Google Patents

選擇性釋離及傳遞微裝置 Download PDF

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TW202114079A
TW202114079A TW109117259A TW109117259A TW202114079A TW 202114079 A TW202114079 A TW 202114079A TW 109117259 A TW109117259 A TW 109117259A TW 109117259 A TW109117259 A TW 109117259A TW 202114079 A TW202114079 A TW 202114079A
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substrate
layer
micro
microdevices
devices
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TW109117259A
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TWI856103B (zh
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艾倫 丹尼爾 特倫特 維爾斯瑪
布拉奈夫 賈維爾聶尼
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加拿大商弗瑞爾公司
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Abstract

本發明揭示一種將微裝置自施體基板選擇性地傳遞至接收器基板上之接觸墊之方法。該方法可包括：提供包括複數個微裝置之施體基板，將該複數個微裝置傳遞至中間基板，在該中間基板上鄰近於系統基板對準一選定組微裝置，將光敏性層提供在該選定組微裝置與系統接收器之間；接通該等選定微裝置，從而藉由該等選定微裝置所發射之光來固化該選定組微裝置與該系統基板之間中的該光敏性層；及將該選定組微裝置接合至該系統基板上之對應接觸墊。

Description

選擇性釋離及傳遞微裝置
本發明係關於將微裝置整合至系統基板中，且更具體而言，本發明係關於將選擇性微裝置自施體基板傳遞及接合至接收器基板之結構及方法。
通常，經常在平坦基板上成批地製作諸多微裝置，包含發光二極體(LED)、有機LED、感測器、固態裝置、積體電路、MEMS(微機電系統)及其他電子組件。為形成操作系統，需要將來自至少一個施體基板之微裝置選擇性地傳遞至接收器基板。
已採用各種方法來將微裝置自施體基板傳遞至接收器基板。在一種方法中，選擇性地產生接收器三以改良微裝置傳遞期間的選擇性。可藉由使用機械、熱或靜電技術來產生接收器力，然而此等技術存在問題。此等技術通常需要用於傳遞之複雜機械結構。在實體上非常難以完成之另一方法中，可選擇性地接通局部加熱以局部地增加溫度。
在另一傳遞方法中，可使用局部環氧樹脂光固化來將微裝置自施體基板光固化至接收器基板上。然而，限制及困難在控制外部光源之光點大小及消像散時出現。此致使非所期望之毗鄰微裝置在緊密接近度內固化及傳遞。在此等替代方法中，技術在微型化裝置大小及增加基板上之微裝置密度時受限制。
因此，存在對自施體基板高效地釋離微裝置(具體而言，微LED)且將其等傳遞至接收器基板之經改良方法及系統之需要。
本發明之一個目標係提供將選擇性微裝置自施體基板傳遞及接合至接收器基板之方法及結構。
本發明之另一目標係提供傳遞程序，其中卡匣基板具有在存在光的情況下將微裝置釋離至接收器基板之接合材料，相同光固化裝置至接收器基板之接合。
根據一項實施例，可提供一種將複數個微裝置整合在系統基板上之方法。該方法可包括：提供包括複數個微裝置之施體基板，將該複數個微裝置傳遞至中間基板，在該中間基板上鄰近於系統基板對準一選定組微裝置，將光敏性層提供在該選定組微裝置與系統接收器之間；藉由該等選定微裝置所發射之光來固化該選定組微裝置與該系統基板之間中的該光敏性層；及將該選定組微裝置接合至該系統基板上之對應接觸墊。
在一個情形中，該光敏性層可包括可見光可固化透明環氧樹脂或光阻劑層。在另一情形中，該光敏性層可包括黏合劑。
根據另一實施例，將該選定組微裝置傳遞至該系統基板上之該等對應接觸墊可包括：用該光敏性層塗佈該系統基板之至少一部分，將該中間基板對準且按壓至該系統基板使得該等選定微裝置中之每一者與該系統基板上之該等對應接觸墊對齊，接通該選定組微裝置；及固化該光敏性層。
根據另一實施例，在該施體基板上製作該等微裝置。
根據一項實施例，可將側壁反射體提供於該施體基板之該等微裝置上或上方以朝向該等微裝置往回反射光。
根據另一實施例，可將犧牲釋離層保形地塗佈於該施體基板上之該等微裝置上或上方。該犧牲層可係光阻劑層。
根據本發明之一項態樣，光可自該等側壁反射體反射出。
根據另一實施例，可提供用於背板基板上之最終裝置結構之透明平坦化層。
根據本發明之一項態樣，為施體基板上之微裝置提供受控通信能力。
根據本發明之另一態樣，可提供藉由局部地聚焦微裝置光而進行的自發射固化。
根據本發明之一項態樣，可提供一種選擇性地傳遞至少一個微LED之方法。
根據本發明之另一態樣，本發明方法通常需要用於傳遞之簡單機械結構。
根據本發明之另一態樣，與其他習用方法中之熱及壓力相比，本發明方法通常需要光來固化光敏性層。
鑒於參考圖式(下文提供該等圖式之簡要闡述)做出之各項實施例及/或態樣之實施方式，本發明之前述內容及額外態樣以及實施例對於熟習此項技術者而言將係顯而易見的。
儘管本發明易受各種修改及替代形式影響，但在圖式中以實例方式展示且將在本文中詳細地闡述特定實施例。然而，應理解，本發明並不意欲限於所揭示之特定形式。而是，本發明涵蓋歸屬於如由隨附申請專利範圍界定之本發明之範疇內的所有修改、等效形式及替代方案。
在此說明書中，可互換地使用術語「系統基板」、「接收器基板」及「顯示器基板」。然而，熟習此項技術者清楚的係，本文中所闡述之實施例與基板類型無關。
在 此說明書中，可互換地使用術語「施體基板」及「載體基板」。然而，熟習此項技術者清楚的係，本文中所闡述之實施例與基板類型無關。
在此說明書中，可互換地使用術語「暫時基板」、「中間基板」及「卡匣基板」。然而，熟習此項技術者清楚的係，本文中所闡述之實施例與基板類型無關。
在此說明書中，可互換地使用術語「晶圓」及「基板」。然而，熟習此項技術者清楚的係，本文中所闡述之實施例與基板類型無關。
另外，此等實施例例示地圖解說明四個微發光裝置，但本發明不限於此。微發光裝置之數目可根據實際需要而改變。
圖1圖解說明根據本發明之實施例之具有微裝置之施體基板之剖視圖。
此處，藉由在藍寶石基板上沈積一材料堆疊來製作微裝置(例如，GaN LED)。微裝置結構可呈以下各項中之一者之形式：圓柱體結構、台面結構、Hip晶片結構或垂直結構。
GaN LED裝置102包含施體基板100(諸如藍寶石)、形成於基板100上之n型GaN層或緩衝層106(舉例而言，無摻雜GaN)、作用層(諸如，多量子井(MQW)) 層及p型GaN層。透明導電層(諸如Ni/Au或ITO)通常形成於p-摻雜GaN層上，用於較好橫向電流傳導。施體基板可係生長基板或載體基板。慣常地，然後在透明導電層上形成p型金屬觸點112-p，諸如Pd/Au、Pt或Ni/Au。由於基板(藍寶石)係絕緣體，因此曝光n型GaN以接觸此層。此步驟通常係使用乾蝕刻程序來曝光n型GaN且然後沈積適當金屬觸點來完成。例如，n型金屬觸點112-n。
在某些實施例中，側壁反射體108可沈積於施體基板上之微裝置上方以朝向微裝置之側壁往回反射光。在一個情形中，反射體可由金屬(例如，Ag、Al、Au)製成。在另一情形中，反射體可由散佈式布拉格反射體製成。
在任一情形中，此等側壁反射體應經最佳化以具有用於特定微LED之發射光譜之高反射率。舉例而言，紅色LED可具有與藍色LED不同的反射體，此基於哪一者在彼波長(色彩)處之反射更高效。
在一項實施例中，微裝置可保形塗佈有犧牲釋離層110，犧牲釋離層110可包含光阻劑層、金屬層或保形介電層。然而，犧牲層組成不限於以上所列舉之此等材料。在一個情形中，必須關於側壁反射體108選擇性地蝕刻犧牲釋離層110。
在另一實施例中，可將鈍化層提供在施體基板上之微裝置四周。在一個情形中，該鈍化層可係介電層以隔離微LED側壁。在另一情形中，該鈍化層可係聚醯亞胺。
然後，舉例而言，可藉由使用微影圖案化及蝕刻部分地曝光微LED之頂部表面來圖案化介電層及側壁反射體108。
圖2圖解說明根據本發明之實施例之暫時基板與具有經整合微裝置之施體基板之整合之剖視圖。參考圖2，本發明之實施例包括基板100、微裝置102及驅動電路層120。緩衝層106可沈積在基板100與微裝置102之間。一或多個緩衝層可用作脫離層，以及用於將完全整合系統與基板100分離。平坦化層116係顯影在微裝置102上方及四周。可能的係，平坦化層116係包含幾種不同層及材料。然後，開口/導通孔118經形成(例如經蝕刻)至平坦化層116中、向下至光阻劑層。在一個情形中，導通孔係透過將導電材料(諸如金屬或透明導電氧化物)沈積至溝槽中而形成。在一項實例中，導通孔係藉由將金屬濺鍍至溝槽中而形成。可自局部區域移除光阻劑。
然後，可藉由將驅動電路層120安置於開口中來將暫時基板114接合至微裝置，藉此可針對個別微裝置圖案化驅動電路層。驅動電路層120可係薄膜電晶體(TFT)、CMOS小晶片或其他類型之積體電路。在一個情形中，暫時基板114可係玻璃基板或藍寶石基板。
圖3圖解說明根據本發明之實施例之施體基板之移除之剖視圖。在一項實施例中，在安裝暫時基板114之後，可移除施體基板100。可自橫向功能裝置移除施體基板100。在一個情形中，可使用雷射剝離來移除施體基板。可用雷射照射施體基板以將微裝置自施體基板剝離且傳遞至暫時基板。在另一情形中，尤其在紅色微裝置之情形中，可使用化學剝離來移除施體基板。當紅色LED係由GaA施體基板上之GaA製成時，化學剝離可係用於施體基板之移除之一較佳選擇。然而，化學剝離可用在任何其他類型之由藍寶石基板上之GaN製成的諸如藍色及綠色之微裝置上。
根據一項實施例，施體基板上之微裝置可具備不同錨，藉此在剝離裝置之後，錨將該等裝置固持至施體基板。錨亦可直接地或透過其他層間接地連接至施體基板。
在 下一步驟中，微裝置之各側上之GaN緩衝層122及鈍化層可經回蝕。可使用ICP 蝕刻將GaN及鈍化層蝕刻至~.l um至1 um以用於光聚焦。
圖4圖解說明根據本發明之實施例之犧牲層之選擇性移除之剖視圖。在一項實施例中，可移除塗佈在微LED上方之犧牲層110。在一項實例中，微裝置可由犧牲層覆蓋，該犧牲層可藉由化學、光學、熱或機械力而自暫時基板解除接合。解除接合程序可係選擇性或全域的。可透過溶液處理(例如，溶劑剝除或酸蝕刻)來移除該犧牲層。移除犧牲層以使微裝置之釋離程序變得容易。
在一個情形中，可回蝕平坦化層126或可進行電漿蝕刻。
微裝置自卡匣至接收器基板之傳遞之程序可係基於不同機制。
圖5圖解說明根據本發明之實施例使用可見光可固化光阻劑/環氧樹脂將微裝置整合至背板之剖視圖。在移除犧牲層之後，接下來的步驟可係將微裝置接合至接收器基板。參考圖5，接收器基板可具備用於耦合或連接微裝置之接觸墊。微裝置可透過接觸墊耦合或連接至接收器基板上之驅動電路134。驅動電路可係形成在接收器基板上之薄膜電晶體(TFT)、CMOS小晶片或其他類型之積體電路。此處，可單獨地製作接收器基板128。可將暫時基板與接收器基板對準使得選定微裝置與對應接觸墊對齊。可將暫時基板與接收器基板移動在一起，直至選定微裝置係以接觸墊之經界定距離定位。該經界定距離可對應於完全或部分接觸但不限於此。換言之，選定微裝置實際上觸及對應接觸墊可未必是絕對必要的，但必須足夠靠近使得下文所闡述之力可被操縱。
在一項實施例中，可將光敏性層/可見光130之薄層/膜(例如，紅色光可固化光阻劑或環氧樹脂)選擇性地或全域地施加/塗佈於接收器基板128上方。該層/膜不應被固化直至微LED將光發射至膜中，然後該光使膜固化。此將致使微LED接合至背板。接合之黏合力強於將微LED固持至卡匣之力。當抬升卡匣時，錨將斷裂且微LED將被傳遞至背板。
在一項態樣中，可將暫時基板與背板/系統基板對準且按壓使得選定微裝置中之每一者與系統基板上之接觸墊對齊。選定微裝置可實際上觸及接收器墊上之對應接觸墊。可接通微裝置132。可接通一組選擇性微裝置或全部微裝置，光可自側壁反射體反射出。由於反射體實際上挖入至可見光可固化光阻劑/環氧樹脂中，因此緊密接近裝置之光洩漏及固化經最小化。可見光可固化環氧樹脂可經固化。在一個情形中，用光來固化環氧樹脂。在另一情形中，其可用熱或壓力來固化。可將一選定組微裝置傳遞至系統基板上之對應接觸墊。
可使用不同或相同中間基板將此方法應用於相同接收器基板多次。
在一個情形中，在傳遞所有裝置之後，可透過顯影劑溶液來移除未經固化光敏性層(不存在裝置之位置)。
圖6圖解說明根據本發明之實施例將暫時基板用於傳遞其他組微裝置之剖視圖。將暫時基板與接收器基板移動分開，從而使選定微裝置附接至對應接觸墊，如圖6中所展示。
一旦將暫時基板與接收器基板分離，則可進行進一步處理步驟。舉例而言，可將暫時基板136與接收器基板128重新對準，且可重複該等步驟以便將一不同組微裝置傳遞至一不同組接觸墊直至暫時基板係空的。
若接收器基板被填滿，則可將接收器基板移動至接下來的步驟。若接收器基板需要進一步填充，則可進行自一或多個額外卡匣基板之進一步傳遞步驟。在新傳遞循環之前，若卡匣不具有足夠裝置，則循環自第一步驟開始。若卡匣基板具有足夠微裝置，則在後續步驟中將卡匣基板偏移(或移動及對準)至接收器基板之新區域。
在一項實例中，第二光可固化層可提供於第二組選定微裝置與第二組接觸墊之間，該第二組選定微裝置不同於選定微裝置且第二組接觸墊不同於接收器基板上之選定接觸墊。然後，可將中間基板136與接收器基板128重新對準使得第二組選定微裝置中之每一者與接收器基板上之第二組接觸墊對齊。可將施體基板與接收器基板移動在一起，直至第二組選定微裝置中之每一者與接收器基板上之第二組接觸墊及第二光可固化層接觸或接近。
圖7圖解說明根據本發明之實施例之背板基板上之透明平坦化層之剖視圖。一旦將中間基板與接收器基板分離，則可進行進一步處理步驟。在一項態樣中，可提供用於背板基板上之最終裝置結構之透明平坦化層138。可將此平坦化層向下蝕刻至微LED上之金屬觸點。導通孔可形成於平坦化層中以控制LED。
圖8A圖解說明根據本發明之實施例之使用金屬反射體之頂部側發射之剖視圖。此處，共同頂部觸點可係經圖案化電極系統140。微裝置可透過平坦化層中之開口/導通孔142連接至背板。共同頂部電極140可由透過物理汽相沈積而沈積之透明導電氧化物(諸如ITO)構成。然而，共同頂部電極不限於此等材料。金屬反射體可由諸如Au、Ag、Cr等反射導體構成且係透過物理汽相沈積而沈積。然而，金屬反射體並不限於此等材料。背板可控制且在任何給定時間與至少一個微LED通信。
圖8B圖解說明根據本發明之實施例之使用金屬反射體之背側發射之剖視圖。此處，可針對個別微裝置圖案化驅動電路層144。其可係被動的或針對釋離最佳化。
圖8C圖解說明根據本發明之實施例透過散佈式布拉格反射體之頂部側發射之剖視圖。參考圖8C，可使用散佈式布拉格反射體148而非使用微裝置之側壁處之金屬反射體。此等散佈式布拉格反射體係由具有不同折射率之交替介電層製成之高反射性結構。布拉格反射體之一實例由Si與Mo或TiO2與SiN之交替層構成。然而，布拉格反射體組成不限於此等材料。該材料可使用物理汽相沈積來沈積。
圖8D圖解說明根據本發明之實施例之透過散佈式布拉格反射體之背側發射之剖視圖。此處，可針對個別微裝置圖案化驅動電路層144。其可係被動的或針對釋離最佳化。
圖9展示根據本發明之實施例將微裝置傳遞及接合至背板之方法900之流程圖。在步驟902中，將複數個微裝置提供於施體基板上。在步驟904中，將複數個微裝置傳遞至中間基板。然後，在步驟906中，將微裝置對準以鄰近於系統基板。在步驟908中，將光敏性層提供在一組選定微裝置與系統基板之間，然後，在步驟910中，可接通一選定組微裝置，且可藉由由選定微裝置所發射之光固化選定組微裝置與系統基板之間中的光敏性層。在步驟912中，將選定微裝置接合至系統基板上之對應接觸墊。
根據一項實施例，可提供一種將複數個微裝置整合在系統基板上之方法。該方法可包括：提供包括複數個微裝置之施體基板，將該複數個微裝置傳遞至中間基板，在該中間基板上鄰近於該系統基板對準一組選定微裝置，將光敏性層提供在該組選定微裝置與系統接收器之間；及將該選定組微裝置傳遞至該系統基板上之對應接觸墊。
根據另一實施例，該光敏性層可包括可見光可固化透明環氧樹脂或光阻劑層或黏合劑。
根據另一實施例，將選定組微裝置傳遞至系統基板上之對應接觸墊可包括：用光敏性層塗佈系統基板之至少一部分，將中間基板對準且按壓至系統基板使得選定微裝置中之每一者與系統基板上之對應接觸墊對齊，接通選定組微裝置；及固化光敏性層。藉由施加光來固化光敏性層。
根據另一實施例，該方法可進一步包括移除中間基板。
根據某些實施例，提供包括微裝置之施體基板之步驟包括：在施體基板上製作微裝置，將反射體安裝在施體基板上之微裝置之側壁上，將犧牲層保形地沈積於微裝置上或上方；及將平坦化層提供於微裝置上或上方。
根據另一實施例，該平坦化層可經圖案化以在微裝置之頂部上形成開口，用於連接至中間基板。
根據另一實施例，該犧牲層可包括以下各項中之一者：光阻劑層、金屬層或保形介電層。該犧牲層可在在中間基板上鄰近於系統基板對準微裝置之前移除。可使用蝕刻或光微影曝光微裝置之頂部表面來圖案化側壁反射體。
根據一項實施例，可在施體基板上製作微裝置，該等微裝置包括以下各項中之一者：圓柱體結構、台面結構、覆晶結構或垂直結構。
根據另一實施例，將複數個微裝置傳遞至中間基板之步驟可包括：提供用於將每一微裝置固持至施體基板之錨；及移除施體基板。藉由以下各項中之一者來移除施體基板：雷射剝離或化學蝕刻。
根據某些實施例，移除中間基板可包括斷裂選定組微裝置之錨。中間基板可包括經圖案化驅動電路層。經圖案化驅動層可包括TFT。系統基板係以下各項中之一者：藍寶石基板或玻璃基板。
根據另一實施例，該方法可進一步包括：在中間基板上鄰近於系統基板對準第二組選定微裝置第二，將第二光敏性層提供在第二組選定微裝置與系統基板之間，將中間基板移動至系統基板使得第二組選定微裝置中之每一者與系統基板上之對應第二選定接觸墊對齊，接通第二組選定微裝置，固化第二組選定微裝置與系統基板之間中的光敏性層；及將第二組選定微裝置接合至系統基板上之對應第二接觸墊。
根據另一實施例，可全域地或選擇性地施加光敏性層。
根據一項實施例，該方法可進一步包括在移除中間基板及透過顯影劑溶液移除未經固化光敏性層之後，將透明平坦化層提供於系統基板上方。
總之，提供將微裝置自施體基板傳遞及接合至接收器基板之方法及結構。 出於圖解說明及闡述之目的，已呈現本發明之一或多項實施例之前述說明。其並非意欲係窮盡性的或將本發明限於所揭示之精確形式。根據本文中之教示，諸多修改及變化係可能的。本發明之範疇並非意欲受此實施方式限制，而是受隨附申請專利範圍限制。
100:施體基板/基板 102:GaN發光二極體裝置/微裝置 106:緩衝層 108:側壁反射體 110:犧牲釋離層/犧牲層 112-n:n型金屬觸點 112-p:p型金屬觸點 114:暫時基板 116:平坦化層 118:開口/導通孔 120:驅動電路層 122:GaN緩衝層 126:平坦化層 128:接收器基板 130:光敏性層/可見光 132:微裝置 134:驅動電路 136:暫時基板/中間基板 138:透明平坦化層 140:經圖案化電極系統/共同頂部電極 142:開口/導通孔 144:驅動電路層 148:散佈式布拉格反射體 900:方法 902:步驟 904:步驟 906:步驟 908:步驟 910:步驟 912:步驟
在閱讀以下實施方式後及在參考圖式後，本發明之前述內容及其他優點將變得顯而易見。
圖1圖解說明根據本發明之所有實施例之具有微裝置之施體基板之剖視圖。
圖2圖解說明根據本發明之實施例之至具有經整合微裝置之暫時基板之電路整合之剖視圖。
圖3圖解說明根據本發明之實施例移除施體基板之剖視圖。
圖4圖解說明根據本發明之實施例選擇性地移除犧牲層之剖視圖。
圖5圖解說明根據本發明之實施例使用可見光可固化光阻劑/環氧樹脂將微裝置整合至背板之剖視圖。
圖6圖解說明根據本發明之實施例使用暫時基板來傳遞其他組微裝置之剖視圖。
圖7圖解說明根據本發明之實施例之背板基板上之透明平坦化層之剖視圖。
圖8A圖解說明根據本發明之實施例之使用金屬反射體之頂部側發射之剖視圖。
圖8B圖解說明根據本發明之實施例之使用金屬反射體之背側發射之剖視圖。
圖8C圖解說明根據本發明之實施例之透過散佈式布拉格(Bragg)反射體之頂部側發射之剖視圖。
圖8D圖解說明根據本發明之實施例之透過散佈式布拉格反射體之背側發射之剖視圖。
圖9展示根據本發明之實施例之用以將微裝置傳遞及接合至背板之一系列步驟。
在不同圖中使用相同參考編號指示類似或相同元件。
鑒於參考圖式(下文提供該等圖式之簡要闡述)做出之各項實施例及/或態樣之實施方式，本發明之前述內容及額外態樣以及實施例對於熟習此項技術者而言將係顯而易見的。
100:施體基板/基板
102:GaN發光二極體裝置/微裝置
106:緩衝層
108:側壁反射體
110:犧牲釋離層/犧牲層
112-n:n型金屬觸點
112-p:p型金屬觸點

Claims (21)

  1. 一種將複數個微裝置整合在系統基板上之方法，其包括： 提供包括該複數個微裝置之施體基板； 將該複數個微裝置傳遞至中間基板； 在該中間基板上鄰近於該系統基板對準一組選定微裝置； 將該中間基板移動至該系統基板，使得該等選定微裝置中之每一者與該系統基板上之對應接觸墊對齊； 將光敏性層提供在該組選定微裝置與該系統基板之間； 接通該等選定微裝置； 藉由由該等選定微裝置所發射之光來固化該選定組微裝置與該系統基板之間中的該光敏性層；及 將該選定組微裝置接合至該系統基板上之該等對應接觸墊。
  2. 如請求項1之方法，其中該光敏性層包括可見光可固化透明環氧樹脂或光阻劑。
  3. 如請求項1之方法，其中全域地或選擇性地施加該光敏性層。
  4. 如請求項1之方法，其進一步包括： 透過顯影劑溶液來移除未經固化光敏性層。
  5. 如請求項1之方法，其進一步包括：移除該中間基板。
  6. 如請求項1之方法，其中提供包括該等微裝置之該施體基板之該步驟包括： 在該施體基板上製作該等微裝置； 將反射體安裝在該施體基板上之該等微裝置之側壁上；將犧牲層保形地沈積於該等微裝置上或上方；及將平坦化層提供於該等微裝置上或上方。
  7. 如請求項6之方法，其中該平坦化層經圖案化以在該等微裝置之頂部上形成開口，用於連接至該中間基板。
  8. 如請求項6之方法，其中該犧牲層包括以下各項中之一者：光阻劑層、金屬層或保形介電層。
  9. 如請求項6之方法，其中在於該中間基板上鄰近於該系統基板對準該等微裝置之前移除該犧牲層。
  10. 如請求項6之方法，其中使用蝕刻或光微影曝光該等微裝置之頂部表面來圖案化該等側壁反射體。
  11. 如請求項6之方法，其中在該施體基板上製作之該等微裝置包括以下各項中之一者：圓柱體結構、台面結構、覆晶結構或垂直結構。
  12. 如請求項1之方法，其中將該複數個微裝置傳遞至該中間基板之該步驟包括： 提供用於將每一微裝置固持至該施體基板之錨；及移除該施體基板。
  13. 如請求項12之方法，其中藉由以下各項中之一者移除該施體基板：雷射剝離或化學蝕刻。
  14. 如請求項12之方法，其中移除該中間基板包括斷裂該選定組微裝置之該錨。
  15. 如請求項1之方法，其中該中間基板包括經圖案化驅動電路層。
  16. 如請求項1之方法，其中經圖案化驅動層包括TFT。
  17. 如請求項1之方法，其中該系統基板係以下各項中之一者：藍寶石基板或玻璃基板。
  18. 如請求項1之方法，其進一步包括： 在該中間基板上鄰近於該系統基板之第二組選定微裝置之第二對準； 將第二光敏性層提供在該第二組選定微裝置與該系統基板之間； 將該中間基板移動至該系統基板，使得該第二組選定微裝置中之每一者與該系統基板上之對應第二選定接觸墊對齊； 接通該第二組選定微裝置： 固化該第二組選定微裝置與該系統基板之間中的該光敏性層；及 將該第二組選定微裝置接合至該系統基板上之該等對應第二接觸墊。
  19. 如請求項1之方法，其中全域地或選擇性地施加該光敏性層。
  20. 如請求項4之方法，其進一步包括： 在移除該中間基板之後，將透明平坦化層提供在該系統基板上方。
  21. 如請求項3之方法，其進一步包括： 透過顯影劑溶液移除未經固化光敏性層。
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