CN114190002A - Forming method of semi-embedded thick copper fine circuit of flexible packaging substrate - Google Patents
Forming method of semi-embedded thick copper fine circuit of flexible packaging substrate Download PDFInfo
- Publication number
- CN114190002A CN114190002A CN202111500209.0A CN202111500209A CN114190002A CN 114190002 A CN114190002 A CN 114190002A CN 202111500209 A CN202111500209 A CN 202111500209A CN 114190002 A CN114190002 A CN 114190002A
- Authority
- CN
- China
- Prior art keywords
- circuit
- product
- photosensitive material
- copper
- electroplating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 59
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 58
- 239000010949 copper Substances 0.000 title claims abstract description 58
- 238000000034 method Methods 0.000 title claims abstract description 30
- 239000000758 substrate Substances 0.000 title claims abstract description 22
- 238000009459 flexible packaging Methods 0.000 title claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 90
- 239000010410 layer Substances 0.000 claims abstract description 43
- 238000009713 electroplating Methods 0.000 claims abstract description 30
- 229910018487 Ni—Cr Inorganic materials 0.000 claims abstract description 19
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 17
- 239000002344 surface layer Substances 0.000 claims abstract description 10
- 238000011161 development Methods 0.000 claims abstract description 8
- 239000000047 product Substances 0.000 claims description 59
- 229920001721 polyimide Polymers 0.000 claims description 49
- 238000005530 etching Methods 0.000 claims description 27
- 239000004642 Polyimide Substances 0.000 claims description 13
- 230000002378 acidificating effect Effects 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 238000000354 decomposition reaction Methods 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 238000013461 design Methods 0.000 claims description 3
- 239000012467 final product Substances 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 3
- 238000004080 punching Methods 0.000 claims description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 15
- 230000017525 heat dissipation Effects 0.000 description 15
- 239000000654 additive Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 230000037303 wrinkles Effects 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000003014 reinforcing effect Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/068—Apparatus for etching printed circuits
Abstract
The invention relates to a method for forming a semi-embedded thick copper fine circuit of a flexible packaging substrate. And carrying out semi-development on the photosensitive material by using an alkaline developing solution, removing a nickel-chromium seed layer in the surface layer of the photoresist, electroplating copper on the product circuit and the electroplating lead region, and stripping the photosensitive material by using an alkaline stripping solution to form the flexible packaging substrate with the semi-embedded thick copper circuit structure. The invention has the beneficial effects that: the distance between the copper circuit and the radiating fin is closer, so that the heat generated by the chip in operation can be more easily led out.
Description
Technical Field
The invention relates to a method for forming a semi-embedded thick-copper fine circuit of a flexible packaging substrate, and belongs to the technical field of circuit boards.
Background
At present, the flexible packaging substrate is influenced by aspects such as improvement of resolution of a display panel, limitation of processing capability of a driving chip, limitation of internal space of equipment and the like, and the driving chip can generate heat more easily. However, after the driving chip generates heat, the overheated working environment may seriously reduce the graphic display processing capability of the chip, which may cause the phenomena of image display blocking, frame rate reduction, even equipment overheating and crash, etc., and may greatly affect the user experience of the product at the terminal. Therefore, there is a new and higher demand for heat dissipation performance of flexible package substrates in the market. Because the heat conduction and heat dissipation capability of copper is much higher than that of a flexible thin film material bearing a copper layer, the heat dissipation performance of the flexible packaging substrate can be improved by increasing the thickness of the copper layer of the flexible packaging substrate through an adopted technical path. Because the copper layer thickness of the flexible packaging substrate base material widely applied in the current market is 8 microns, in order to improve the heat dissipation performance of the substrate, the copper layer thickness of the base material needs to reach 12 microns or more.
The circuit forming scheme adopted by the circuit board product at present comprises an etching method and a semi-additive method, and taking a COF flexible package substrate commonly applied in the market at present as an example, the principle of the step of forming the circuit by the semi-additive method is as follows.
1. Sputtering a nickel-chromium layer on the surface of a polyimide film material as a seed layer for electroplating, coating a photosensitive material photoresist on the nickel-chromium layer, 2, carrying out exposure treatment on the photosensitive material photoresist, transferring a circuit pattern onto the photoresist, developing after exposure is finished, namely removing the photoresist which generates decomposition reaction by using a developing solution to expose the bottom sputtered nickel-chromium layer, 3, carrying out copper electroplating on the developed product, namely electroplating and expanding copper in a circuit area to form a copper circuit, 4, carrying out stripping operation on the copper-plated product, namely stripping the photosensitive material photoresist by using an alkaline stripping solution, 5, carrying out etching operation on the stripped product, and etching and removing the nickel-chromium layer between circuits by using an etching solution to form a product circuit.
The method for forming the circuit by the principle of the semi-addition method has the following defects: 1. the cross section shape of the circuit adopting the semi-additive method is determined by the cross section of the photosensitive material after development, and the shape of the copper-plated circuit is difficult to control after the thickness of the copper-plated circuit exceeds the surface of the photosensitive material too much, so the copper thickness of the circuit is limited by the thickness of the photosensitive material. When the photosensitive material becomes thicker, the exposure resolution of the photosensitive material is lowered, and the forming requirement of the fine circuit cannot be met. Therefore, the thickness of the photosensitive material is generally controlled to be 3 to 5 micrometers, the copper thickness of the fine circuit is generally controlled to be about 6 to 8 micrometers, and the thick copper circuit required by the heat dissipation capability of the chip cannot be formed, so that the heat dissipation performance is difficult to improve. 2. When the semi-additive circuit is formed, the nickel-chromium seed layer is etched after copper plating, and the thickness of the copper-plated circuit part is also etched and reduced synchronously, so that the copper thickness of the circuit is influenced. 3. The semi-additive method can cause incomplete etching during the etching of the seed layer, which causes poor circuit, short circuit and the like of the product, and further affects the product quality. 4. In order to improve the heat dissipation capability of the flexible packaging substrate in the prior art, an aluminum heat dissipation fin can be arranged on the back surface of the flexible film material, and the heat conductivity of copper is far higher than that of the polyimide film material, so that the closer the copper is to the heat dissipation fin, the better the heat dissipation capability is. In the conventional semi-addition method, if a polyimide material with an excessively thin thickness is used, the product is prone to wrinkle in the conveying process, so that the polyimide film material with the thickness of more than 34 micrometers is adopted in the industry at present, and further development of the heat dissipation capacity of the polyimide film material is limited. 5. In the circuit structure of the semi-additive method, only the bottom surface of the circuit is combined with the polyimide material, so that the poor combination force is poor, and the poor stripping of the copper circuit is easy to generate.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides a method for forming a semi-embedded thick copper fine circuit of a flexible packaging substrate.
The invention is realized by the following technical scheme: a forming method of a flexible packaging substrate semi-embedded thick copper fine circuit is characterized by comprising the following steps:
step 1: in the product design stage, a product circuit is connected to an electroplating lead outside a product outline, so that the electric conduction during the copper electroplating is realized;
step 2: coating a layer of photosensitive material I on the upper surface of the polyimide film, and pressing a layer of photosensitive material II on the lower surface of the polyimide film;
and step 3: carrying out exposure treatment on the photosensitive material I on the upper surface, transferring the circuit pattern onto the photosensitive material I, and developing after exposure, namely removing the photosensitive material I which is subjected to decomposition reaction by using a developing solution to expose the polyimide film;
and 4, step 4: performing PI etching on the polyimide with the exposed upper surface by using an acidic PI etching solution to form a circuit groove, wherein the polyimide film on the lower surface is protected by a photosensitive material II and cannot generate etching reaction;
and 5: sputtering a nickel-chromium layer on the upper surface of the product, and forming a conductive seed layer on the bottom and the side wall of the circuit groove of the polyimide film;
step 6: carrying out half development on the two layers of photosensitive materials on the upper surface and the lower surface by using a developing solution, synchronously removing a nickel-chromium seed layer in the surface layer of the photoresist, and only forming the nickel-chromium seed layer at the bottom and on the side wall of a circuit groove of polyimide in the upper surface of the product;
and 7: electroplating copper on the product by utilizing the electroplating lead area, electroplating copper on the product circuit and the electroplating lead area to form a copper circuit, wherein the copper plating height is flush with the surface of the semi-developed photoresist, so that a semi-embedded circuit structure is formed;
and 8: stripping the two layers of photosensitive materials on the upper surface and the lower surface by using alkaline stripping liquid;
and step 9: and forming a semi-embedded circuit shape after the electroplating circuit is formed, blanking and forming a product, and punching the electroplating lead outside the outline of the product to form a final product of the product.
The photosensitive material I is photoresist, and the photosensitive material II is a dry film.
And 4, performing PI etching on the polyimide exposed on the upper surface by using an acidic PI etching solution to form an inverted trapezoidal line groove with the depth of more than 8 microns.
In the step 6, only the photosensitive material on the surface layer is photolyzed by reducing the exposure energy of the UV light, and the developer reacts only the photosensitive material on the surface layer during the reaction.
The invention has the beneficial effects that: the thickness of the copper line is mainly determined by the depth of a line groove of a polyimide film material subjected to PI etching, and PI etching under the fine line condition is realized by adopting a thinner photoresist, so that the thick copper line molding under the fine line condition is met, and the heat dissipation performance of a product can be greatly improved.
The nickel-chromium particles outside the circuit area can enter the photosensitive material and cannot be embedded into the polyimide film, so that the nickel-chromium conductive particles outside the circuit area can be completely removed when the photosensitive material is stripped, the defects of circuit micro-short, short circuit and the like caused by incomplete etching of the seed layer can be avoided, and the product yield is improved.
By adopting the technical scheme of semi-embedded copper circuit, when the radiating fin is arranged on the back of the flexible polyimide film material, the distance between the copper circuit and the radiating fin is closer, thereby being more beneficial to leading out heat generated by the chip during working.
The semi-embedded circuit structure can reduce the total stacking thickness of the flexible packaging substrate product and has wider applicability.
The two sides and the bottom surface of the copper circuit in the semi-embedded type circuit structure are both combined with the polyimide material, and the copper circuit has better bonding force compared with a traditional semi-addition method circuit forming structure, so that the occurrence of circuit peeling is greatly reduced.
The height of the semi-embedded line is smaller than the section difference formed on the surface of the polyimide film, and the influence of ink capillary effect formed by the section difference of the fine line is smaller, so that the control of ink overflow precision is easier.
A layer of dry film material is pressed on the lower surface of the polyimide film material, and the layer of dry film material is attached to the lower surface of the polyimide film material all the time in the circuit forming process until the dry film material is peeled off, so that the film material can play a role in bearing and reinforcing the film material in the production process, and wrinkles are prevented from being generated in the production process of a product. Thinner polyimide film materials can be adopted, the bending performance of the product is effectively improved, and the heat dissipation capacity of the product can be further improved.
Due to the existence of the dry film material on the lower surface, the polyimide film material on the back surface can be protected, the scratch of the product in the conveying process can be effectively avoided, and the product quality is further improved.
Drawings
The invention is further illustrated below with reference to the figures and examples.
FIG. 1 is a schematic cross-sectional view of a step of the present invention;
FIG. 2 is a schematic perspective view of a product of the present invention;
FIG. 3 is a schematic perspective view of a product of the present invention being formed by blanking;
fig. 4 is a schematic view of the state of use of the present invention.
In the figure: 1. a product circuit; 2. a product outline; 3. electroplating a lead; 4. a polyimide film; 5. a photosensitive material I; 6. a photosensitive material II; 7. developing; 8. a circuit groove; 9. a seed layer; 10. half developing; 11. copper plating; 12. stripping the photosensitive material; 13. a heat sink; 14. and a copper wire.
Detailed Description
As shown in fig. 1, a method for forming a semi-embedded thick copper fine circuit of a flexible package substrate includes the steps of:
step 1: in the product design stage, a product circuit 1 is connected to an electroplating lead 3 outside a product outline 2, so that the electric conduction during the copper electroplating is realized;
step 2: coating a layer of photosensitive material I5 on the upper surface of the polyimide film 4, and pressing a layer of photosensitive material II 6 on the lower surface of the polyimide film 4;
and step 3: exposing the photosensitive material I5 on the upper surface, transferring the circuit pattern onto the photosensitive material I5, and developing 7 after exposure, namely removing the photosensitive material I5 subjected to decomposition reaction by using a developing solution to expose the polyimide film 4;
and 4, step 4: performing PI etching on the polyimide 4 exposed on the upper surface by using an acidic PI etching solution to form a circuit groove 8, wherein the polyimide film 4 on the lower surface is protected by a photosensitive material II 6 and does not generate an etching reaction;
and 5: sputtering a nickel-chromium layer on the upper surface of the product, and forming a conductive seed layer 9 on the bottom and the side wall of the circuit groove 8 of the polyimide film 4;
step 6: carrying out half development 10 on the two layers of photosensitive materials on the upper surface and the lower surface by using a developing solution, synchronously removing a nickel-chromium seed layer in the surface layer of the photoresist, and only arranging the nickel-chromium seed layer at the bottom and on the side wall of a circuit groove 8 of polyimide in the upper surface of the product;
and 7: electroplating copper 11 on the product by utilizing the electroplating lead 3 area, electroplating copper on the product circuit 1 and the electroplating lead 3 area to form a copper circuit, wherein the copper plating height is flush with the surface of the photoresist after half development, thereby forming a half-embedded circuit structure;
and 8: stripping the two layers of photosensitive materials on the upper surface and the lower surface by using alkaline stripping liquid 12;
and step 9: and forming a semi-embedded circuit shape after the electroplating circuit is formed, blanking and forming a product, and punching the electroplating lead 3 outside the outline 2 of the product to form a final product of the product.
The photosensitive material I5 is photoresist, and the photosensitive material II 6 is a dry film.
And 4, performing PI etching on the polyimide 4 exposed on the upper surface by using an acidic PI etching solution to form an inverted trapezoidal line groove 8 with the depth of more than 8 microns.
In the step 6, only the photosensitive material on the surface layer is photolyzed by reducing the exposure energy of the UV light, and the developer reacts only the photosensitive material on the surface layer during the reaction.
The invention has the beneficial effects that: the thickness of the copper line is mainly determined by the depth of a line groove of a polyimide film material subjected to PI etching, and PI etching under the fine line condition is realized by adopting a thinner photoresist, so that the thick copper line molding under the fine line condition is met, and the heat dissipation performance of a product can be greatly improved.
The nickel-chromium particles outside the circuit area can enter the photosensitive material and cannot be embedded into the polyimide film, so that the nickel-chromium conductive particles outside the circuit area can be completely removed when the photosensitive material is stripped, the defects of circuit micro-short, short circuit and the like caused by incomplete etching of the seed layer can be avoided, and the product yield is improved.
By adopting the technical scheme of semi-embedded copper circuit, when the heat radiating fin 13 is arranged on the back surface of the flexible polyimide film material, the distance between the copper circuit 14 and the heat radiating fin 13 is closer, thereby being more beneficial to the conduction of heat generated by the chip in work.
The semi-embedded circuit structure can reduce the total stacking thickness of the flexible packaging substrate product and has wider applicability.
The two sides and the bottom surface of the copper circuit in the semi-embedded type circuit structure are both combined with the polyimide material, and the copper circuit has better bonding force compared with a traditional semi-addition method circuit forming structure, so that the occurrence of circuit peeling is greatly reduced.
The height of the semi-embedded line is smaller than the section difference formed on the surface of the polyimide film, and the influence of ink capillary effect formed by the section difference of the fine line is smaller, so that the control of ink overflow precision is easier.
A layer of dry film material is pressed on the lower surface of the polyimide film material, and the layer of dry film material is attached to the lower surface of the polyimide film material all the time in the circuit forming process until the dry film material is peeled off, so that the film material can play a role in bearing and reinforcing the film material in the production process, and wrinkles are prevented from being generated in the production process of a product. Thinner polyimide film materials can be adopted, the bending performance of the product is effectively improved, and the heat dissipation capacity of the product can be further improved.
Due to the existence of the dry film material on the lower surface, the polyimide film material on the back surface can be protected, the scratch of the product in the conveying process can be effectively avoided, and the product quality is further improved.
Claims (4)
1. A forming method of a flexible packaging substrate semi-embedded thick copper fine circuit is characterized by comprising the following steps:
step 1: in the product design stage, a product circuit (1) is connected to an electroplating lead (3) outside a product outline (2) to realize electrical conduction during copper electroplating;
step 2: coating a layer of photosensitive material I (5) on the upper surface of the polyimide film (4), and pressing a layer of photosensitive material II (6) on the lower surface of the polyimide film (4);
and step 3: exposing the photosensitive material I (5) on the upper surface, transferring the circuit pattern to the photosensitive material I (5), and developing (7) after exposure, namely removing the photosensitive material I (5) which has undergone decomposition reaction by using a developing solution to expose the polyimide film (4);
and 4, step 4: PI etching is carried out on the polyimide (4) with the exposed upper surface by using an acidic PI etching solution to form a circuit groove (8), and the polyimide film (4) with the lower surface is protected by a photosensitive material II (6) and cannot generate etching reaction;
and 5: sputtering a nickel-chromium layer on the upper surface of the product, and forming a conductive seed layer (9) on the bottom and the side wall of the circuit groove (8) of the polyimide film (4);
step 6: carrying out half development (10) on the two layers of photosensitive materials on the upper surface and the lower surface by using a developing solution, synchronously removing a nickel-chromium seed layer in the surface layer of the photoresist, and only forming the nickel-chromium seed layer at the bottom and on the side wall of a circuit groove (8) of polyimide in the upper surface of the product;
and 7: electroplating copper (11) is carried out on the product by utilizing the electroplating lead (3) area, electroplating copper expansion is carried out on the product circuit (1) and the electroplating lead (3) area to form a copper circuit, and the height of the copper plating is flush with the surface of the photoresist after half development, so that a half-embedded circuit structure is formed;
and 8: stripping (12) the two layers of photosensitive materials on the upper surface and the lower surface by using alkaline stripping liquid;
and step 9: and forming a semi-embedded circuit shape after the electroplating circuit is formed, blanking and forming the product, and punching the electroplating lead (3) outside the outline line (2) of the product to form a final product of the product.
2. The method as claimed in claim 1, wherein the flexible package substrate comprises a thick copper fine circuit, and the method comprises: the photosensitive material I (5) is photoresist, and the photosensitive material II (6) is a dry film.
3. The method as claimed in claim 1, wherein the flexible package substrate comprises a thick copper fine circuit, and the method comprises: and 4, performing PI etching on the polyimide (4) exposed on the upper surface by using an acidic PI etching solution to form an inverted trapezoidal line groove (8) with the depth of more than 8 microns.
4. The method as claimed in claim 1, wherein the flexible package substrate comprises a thick copper fine circuit, and the method comprises: in the step 6, only the photosensitive material on the surface layer is photolyzed by reducing the exposure energy of the UV light, and the developer reacts only the photosensitive material on the surface layer during the reaction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111500209.0A CN114190002A (en) | 2021-12-09 | 2021-12-09 | Forming method of semi-embedded thick copper fine circuit of flexible packaging substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111500209.0A CN114190002A (en) | 2021-12-09 | 2021-12-09 | Forming method of semi-embedded thick copper fine circuit of flexible packaging substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114190002A true CN114190002A (en) | 2022-03-15 |
Family
ID=80542982
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111500209.0A Pending CN114190002A (en) | 2021-12-09 | 2021-12-09 | Forming method of semi-embedded thick copper fine circuit of flexible packaging substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114190002A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114650663A (en) * | 2022-03-29 | 2022-06-21 | 江苏上达半导体有限公司 | Forming method of double-sided embedded type circuit |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5112448A (en) * | 1989-11-28 | 1992-05-12 | The Boeing Company | Self-aligned process for fabrication of interconnect structures in semiconductor applications |
| CN1070287A (en) * | 1991-02-11 | 1993-03-24 | 波音公司 | Multichip module and integrated circuit substrate with plane composition surface |
| US20060225275A1 (en) * | 2005-04-07 | 2006-10-12 | Ho-Ching Yang | Precasting multi-layer pcb process |
| KR20090078529A (en) * | 2008-01-15 | 2009-07-20 | 삼성전자주식회사 | Method for manufacturing metal line and method for manufacturing display panel having the metal line |
| CN102083280A (en) * | 2009-11-30 | 2011-06-01 | Lg伊诺特有限公司 | Embedded printed circuit board, multi-layer printed circuit board and manufacturing method thereof |
| CN103945644A (en) * | 2014-05-13 | 2014-07-23 | 张伯平 | Flat circuit board and manufacturing method thereof |
| CN104411106A (en) * | 2014-11-14 | 2015-03-11 | 电子科技大学 | Manufacturing method of fine circuit of printed-circuit board |
| CN105960103A (en) * | 2016-07-14 | 2016-09-21 | 安捷利电子科技（苏州）有限公司 | Manufacturing method for embedded type circuit of PCB (Printed Circuit Board) |
| CN106376184A (en) * | 2016-07-22 | 2017-02-01 | 深南电路股份有限公司 | Manufacturing method of embedded line and packaging substrate |
| CN107146781A (en) * | 2017-05-27 | 2017-09-08 | 华进半导体封装先导技术研发中心有限公司 | It is a kind of to have core plate structure and its manufacture method for the two-sided of BOT encapsulation |
| KR20170107270A (en) * | 2016-03-15 | 2017-09-25 | 에스케이씨 주식회사 | Thin circuit board, preparation method thereof and antena module comprising same |
-
2021
- 2021-12-09 CN CN202111500209.0A patent/CN114190002A/en active Pending
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5112448A (en) * | 1989-11-28 | 1992-05-12 | The Boeing Company | Self-aligned process for fabrication of interconnect structures in semiconductor applications |
| CN1070287A (en) * | 1991-02-11 | 1993-03-24 | 波音公司 | Multichip module and integrated circuit substrate with plane composition surface |
| US20060225275A1 (en) * | 2005-04-07 | 2006-10-12 | Ho-Ching Yang | Precasting multi-layer pcb process |
| KR20090078529A (en) * | 2008-01-15 | 2009-07-20 | 삼성전자주식회사 | Method for manufacturing metal line and method for manufacturing display panel having the metal line |
| CN102083280A (en) * | 2009-11-30 | 2011-06-01 | Lg伊诺特有限公司 | Embedded printed circuit board, multi-layer printed circuit board and manufacturing method thereof |
| KR20110060325A (en) * | 2009-11-30 | 2011-06-08 | 엘지이노텍 주식회사 | Half buried pcb, multi-layer pcb and fabricating method of the same |
| CN103945644A (en) * | 2014-05-13 | 2014-07-23 | 张伯平 | Flat circuit board and manufacturing method thereof |
| CN104411106A (en) * | 2014-11-14 | 2015-03-11 | 电子科技大学 | Manufacturing method of fine circuit of printed-circuit board |
| KR20170107270A (en) * | 2016-03-15 | 2017-09-25 | 에스케이씨 주식회사 | Thin circuit board, preparation method thereof and antena module comprising same |
| CN105960103A (en) * | 2016-07-14 | 2016-09-21 | 安捷利电子科技（苏州）有限公司 | Manufacturing method for embedded type circuit of PCB (Printed Circuit Board) |
| CN106376184A (en) * | 2016-07-22 | 2017-02-01 | 深南电路股份有限公司 | Manufacturing method of embedded line and packaging substrate |
| CN107146781A (en) * | 2017-05-27 | 2017-09-08 | 华进半导体封装先导技术研发中心有限公司 | It is a kind of to have core plate structure and its manufacture method for the two-sided of BOT encapsulation |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114650663A (en) * | 2022-03-29 | 2022-06-21 | 江苏上达半导体有限公司 | Forming method of double-sided embedded type circuit |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI413461B (en) | Method of manufacturing wiring board | |
| US7462555B2 (en) | Ball grid array substrate having window and method of fabricating same | |
| US7408261B2 (en) | BGA package board and method for manufacturing the same | |
| US20080315398A1 (en) | Packaging substrate with embedded chip and buried heatsink | |
| CN108617104B (en) | Method for manufacturing printed circuit board with thickened copper local pattern | |
| KR100427794B1 (en) | Method of manufacturing multilayer wiring board | |
| US6974775B2 (en) | Method and apparatus for making an imprinted conductive circuit using semi-additive plating | |
| KR20160020407A (en) | Method for manufacturing wiring board | |
| CN112788857A (en) | Circuit board fine circuit processing method | |
| CN101909407A (en) | Method for etching V-CUT on iron substrate | |
| CN114190002A (en) | Forming method of semi-embedded thick copper fine circuit of flexible packaging substrate | |
| KR100731604B1 (en) | Method for manufacturing printed circuit board with high stiffness | |
| US8828247B2 (en) | Method of manufacturing printed circuit board having vias and fine circuit and printed circuit board manufactured using the same | |
| CN104427751A (en) | Printed circuit board and manufacturing method thereof | |
| KR101082778B1 (en) | Method of fabricating a fine-pitch printed circuit board | |
| JP2004221450A (en) | Printed board and its manufacturing method | |
| CN102480844A (en) | Process for manufacturing diffusion coating prevention PCB (printed circuit board) gold-plated board | |
| JP2005243899A (en) | Printed circuit board and its manufacturing method | |
| JP2003115662A (en) | Method of manufacturing semiconductor device substrate | |
| US9497865B2 (en) | Printed circuit board and fabrication method thereof | |
| CN112312671B (en) | Circuit board and preparation method thereof | |
| JP2002217248A (en) | Transfer plate for pattern formation and method of manufacturing substrate for semiconductor device using it | |
| KR101116781B1 (en) | a Manufacturing Method of a Thin Layer Semiconductor Package | |
| KR100782403B1 (en) | Method for manufacturing circuit board | |
| US20090266587A1 (en) | Flexible printed circuit board and method of forming fine pitch therein |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20240204 Address after: 221300 north of Liaohe Road and west of Huashan Road, Pizhou Economic Development Zone, Xuzhou City, Jiangsu Province Applicant after: Jiangsu SHANGDA Semiconductor Co.,Ltd. Country or region after: China Address before: 518100 floors 1-4, 2-3, building a, Huangpu Runhe Industrial Park, South Ring Road, Huangpu Community, Shajing street, Bao'an District, Shenzhen City, Guangdong Province Applicant before: LEADER-TECH ELECTRONICS (SHENZHEN) Inc. Country or region before: China |
|
| TA01 | Transfer of patent application right |