CN114163460A - 一种发光层掺杂材料及有机电致发光器件 - Google Patents
一种发光层掺杂材料及有机电致发光器件 Download PDFInfo
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- CN114163460A CN114163460A CN202010946968.9A CN202010946968A CN114163460A CN 114163460 A CN114163460 A CN 114163460A CN 202010946968 A CN202010946968 A CN 202010946968A CN 114163460 A CN114163460 A CN 114163460A
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Classifications
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- C—CHEMISTRY; METALLURGY
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Abstract
本发明提供了一种发光层掺杂材料及有机电致发光器件,包括含硼氮类结构为母核的化合物,可以用于OLED器件的发光掺杂材料。本发明的技术方案避免了分子间的聚集作用,具有好的成膜特性和良好的光电性能,能够满足面板制造企业的要求。
Description
技术领域
本发明涉及有机电致发光器件领域,具体地说,涉及一种发光层掺杂材料及具有其的有机电致发光器件。
背景技术
有机电致发光(OLED:Organic Light Emission Diodes)器件技术由于其具有自发光、广视角(达175°以上)、短反应时间、高发光效率、广色域、低工作电压(3~10V)、面板薄(可小于1mm)和可卷曲等特性,可以用来制造新型显示产品,应用前景十分广泛。随着技术的愈加成熟,其今后有可能得到迅速发展,前途不可限量。
OLED发光器件包括电极材料膜层,以及夹在不同电极膜层之间的有机功能材料。其发光原理是通过施加一个外加电压,空穴和电子分别进入空穴传送层的HOMO能阶和电子传送层的LUMO能阶;而后电荷在外加电场的驱动下传递至空穴传送层和电子传送层的界面,界面的能阶差使得界面会有电荷的累积;电子、空穴在有发光特性的有机物质内再结合,形成一个激发子,此激发子在一般环境是不稳定的,之后将以光或热的形式释放能量而回到稳定的基态。经由电子、空穴再结合产生的激发态理论上只有25%是单重激发态,其余75%为三重激发态,将以磷光或热的形式回归到基态。传统有机荧光材料只能利用电激发形成的25%单线态激子发光,器件的内量子效率较低(最高为25%)。外量子效率普遍低于5%,与磷光器件的效率还有很大差距。尽管磷光材料由于重原子中心强的自旋-轨道耦合增强了系间窜越,可以有效利用电激发形成的单线态激子和三线态激子发光,使器件的内量子效率达100%。但磷光材料存在价格昂贵,材料稳定性较差,器件效率滚落严重等问题,限制了其在OLEDs的应用。
热激活延迟荧光(TADF)材料是继有机荧光材料和有机磷光材料之后发展的第三代有机发光材料。该类材料一般具有小的单线态-三线态能级差(△EST),三线态激子可以通过反系间窜越转变成单线态激子发光。这可以充分利用电激发下形成的单线态激子和三线态激子,器件的内量子效率可以达到100%。同时材料结构可控,性质稳定,价格便宜无需贵重金属,在OLEDs领域的应用前景广阔。然而,大多数TADF发光材料表现出非常宽的发光光谱,使得它们对于显示应用是不期望的。此外,TADF器件的使用寿命仍未达到显示应用的行业标准。TADF器件在高亮度下也具有严重的效率降低和寿命问题。
发明内容
针对现有技术中的问题,本发明的目的在于提供一种发光层掺杂材料及具有其的有机电致发光器件,避免了分子间的聚集作用,具有好的成膜特性和良好的光电性能,能够满足面板制造企业的要求。
根据本发明的一个方面,具有式I所示的结构的化合物:
优选的:所述R1、R2和R3不同时为氢。
优选的:所述R1、R2和R3中至少一个为氢。
优选的:所述式I的化合物为:
中的任一种。
根据本发明的另一个方面,还提供一种有机电致发光器件,所述有机电致发光器件中包括上述的发光层掺杂材料。
优选的:所述有机电致发光器件的发光层中包括发光层掺杂材料。
本发明的一种发光层掺杂材料及具有其的有机电致发光器件,具有以下技术效果:
1、本发明技术方案的用于OLED的新型含硼杂环化合物,结构分子内包含电子给体(donor,D)与电子受体(acceptor,A)。D-A结构组合可以增加轨道重叠、提高发光效率。通过连接芳香基团以获得HOMO、LUMO空间分离的电荷转移态材料,实现小的S1态和T1态的能级差(△Est<0.1eV),充分利用三线态能量,从而在热刺激条件下实现反向系间窜越,产生延迟荧光现象。
2、同时,本发明的化合物具有高的三线态能级(T1),适合作为发光层掺杂材料使用,利于主客体材料之间能量传递,提高能量利用率,同时由于其具有较快的荧光辐射速率,可以有效降低材料延迟荧光寿命,从而降低材料的三线态淬灭效应,提升器件效率。
3、基于上述结构的含硼化合物,碳-硼键具有良好的键能稳定性,材料受到电激发形成的激发态化合物,其能量低于和硼相连形成的键能,因而使得材料的化学稳定性得到提升;通过连接不同的取代基团,破坏分子的结晶性,避免了分子间的较强的聚集作用使得材料的玻璃化转移温度得到提升。材料良好的热稳定性有助于提高器件寿命。
4、本发明所述化合物可作为发光层层掺杂材料应用于OLED发光器件制作,获得了良好的器件表现,表现出发光光谱半峰宽窄,主要因为含硼材料受到激发形成的激发态构型稳定,不易产生构象弛豫,其构象重组能较低同时,对于器件外量子效率和寿命提升非常明显。本发明所述化合物材料在OLED发光器件中具有良好的应用效果,具有良好的产业化前景。
具体实施方式
现在将参考实施例更全面地描述示例实施方式。然而,示例实施方式能够以多种形式实施,且不应被理解为限于在此阐述的实施方式。相反,提供这些实施方式使得本发明将全面和完整,并将示例实施方式的构思全面地传达给本领域的技术人员。
在本发明的实施例中,提供了一种发光层掺杂材料及具有其的有机电致发光器件,具有式I所示的结构的化合物:
本发明实施例的一种发光层掺杂材料及具有其的有机电致发光器件,含硼杂环为核的有机化合物,其表现出窄谱线形状和高光致发光量子产率,作为发光层材料应用于有机电致发光器件,本发明制作的器件具有良好的光电性能,能够满足面板制造企业的要求。
在本发明的实施例中,
下面具体实施例描述本发明:
本发明化合物的合成通式如下:
以化合物4的合成举例如下:
化合物4的合成路线如下:
中间体A的合成:
邻二碘苯(10mmol),咔唑(11mmol),醋酸钯(0.4mmol)和叔丁醇钠(22mmol)的混合物,溶于200mL无水二甲苯,并将混合物用N2鼓泡5分钟。加入三叔丁基膦(0.8mmol)的甲苯(10%wt溶液),并将混合物再用N2鼓泡5分钟。然后将反应混合物加热至50℃过夜。蒸发溶剂后,加入水。将混合物用乙酸乙酯萃取三次。萃取物经MgSO4干燥,过滤,浓缩并经柱层析(硅胶,从100:1PE/CH2Cl2至5:1PE/CH2Cl2的中间体A(62%收率),为白色固体。
中间体B/C的合成:
将中间体A(5mmol),苯胺(5mmol),叔丁醇钠(10mmol),三(二亚苄基丙酮)二钯(0.2mmol)和1,1'-双(二苯基膦)二茂铁(0.4mmol)的混合物,在100mL无水二甲苯中用N2鼓泡10分钟并在N2下回流过夜。蒸发溶剂后,加入水。将混合物用乙酸乙酯萃取三次。萃取物经MgSO4干燥,过滤,浓缩并经柱色谱(硅胶,从纯PE至10:1PE/CH2Cl2的梯度洗脱)得到中间体B(40%收率),为无色油状。中间体C的制备与B相同。
中间体D的合成:
称取原料1,中间体C,叔丁醇钾(10mmol)PdCl2加入,搅拌混合物,在100mL无水二甲苯中用N2鼓泡10分钟,将上述反应物的混合溶液在氮气反应温度在80℃下搅拌3h,然后加入中间体B,叔丁醇钾(10mmol)PdCl2,将反应混合物升温至120℃,加热2小时,在反应结束后,冷却加水、混合物用二氯甲烷萃取,萃取液用无水硫酸钠干燥,过滤并在减压下浓缩,所得残余物过硅胶柱纯化,得到中间体D。
化合物4的合成:
将中间体D(1mmol)溶入50mL的叔丁基苯,降温到0℃,然后将叔丁基锂(2.2mmol)缓慢逐滴加入。在氮气氛围下,搅拌2h。两小时后,加入溴化硼(1.2mmmol)并再搅拌半小时,在此期间将温度升至室温;接着缓慢滴加2mmol的(EtN(i-Pr)2,升温至120℃,搅拌反应8小时。蒸发溶剂后,加入水。将混合物用乙酸乙酯萃取三次。萃取物经MgSO4干燥,过滤,浓缩并经柱层析(硅胶,从100:1PE/CH2Cl2至10:1PE/CH2Cl2的梯度洗脱)产物进行旋蒸,得到化合物4(32%收率),为浅绿色固体,使用反相柱色谱法以乙腈作为洗脱液进一步纯化,得到白色固体并以核磁共振和质谱确定其结构,为目标产物。HRMS(m/z):[M+H]+,理论值为838.33,实测值838.67。
本发明化合物可以作为发光层掺杂材料使用,对本发明化合物1-21和现有材料DSA-ph/TADF1分别进行热性能、单线态-三线态能级差的测定,检测结果如表1所示。
表1:材料性能表
序号 | Td(℃) | △Est(eV) | HOMO(eV) | 循环伏安稳定性 |
化合物1 | 396 | 0.07 | -5.71 | 优 |
化合物2 | 400 | 0.08 | -5.87 | 优 |
化合物3 | 401 | 0.07 | -5.76 | 优 |
化合物4 | 398 | 0.05 | -5.68 | 优 |
化合物5 | 410 | 0.1 | -5.69 | 优 |
化合物6 | 413 | 0.05 | -5.78 | 优 |
化合物7 | 402 | 0.05 | -5.82 | 优 |
化合物8 | 411 | 0.06 | -5.83 | 优 |
化合物9 | 423 | 0.07 | -5.79 | 优 |
化合物10 | 411 | 0.06 | -5.69 | 优 |
化合物11 | 413 | 0.04 | -5.77 | 优 |
化合物12 | 405 | 0.08 | -5.8 | 优 |
化合物13 | 407 | 0.12 | -5.86 | 优 |
化合物14 | 415 | 0.06 | -5.75 | 优 |
化合物15 | 422 | 0.08 | -5.64 | 优 |
化合物16 | 416 | 0.15 | -5.49 | 优 |
化合物17 | 413 | 0.06 | -5.55 | 优 |
化合物18 | 417 | 0.06 | -5.84 | 优 |
化合物19 | 416 | 0.08 | -5.69 | 优 |
化合物20 | 405 | 0.09 | -5.76 | 优 |
化合物21 | 420 | 0.05 | -5.83 | 优 |
DSA-ph | 320 | 0.32 | -5.32 | 良好 |
TADF1 | 340 | 0.22 | -5.42 | 良好 |
注:热失重温度Td是在氮气气氛中失重1%的温度,在日本岛津公司的TGA-50H热重分析仪上进行测定,氮气流量为20mL/min;λPL是样品溶液荧光发射波长,利用日本拓普康S R-3分光辐射度计测定。循环伏安稳定性是通过循环伏安法观测材料的氧化还原特性来进行鉴定;
测试条件:测试样品溶于体积比为2:1的二氯甲烷和乙腈混合溶剂,浓度1mg/mL,电解液是0.1M的四氟硼酸四丁基铵或六氟磷酸四丁基铵的有机溶液。参比电极是Ag/Ag+电极,对电极为钛板,工作电极为ITO电极,循环次数为20次。
由上表数据可知,本发明的化合物具有较高的热稳定性,较小的单线态-三线态能级差,使得应用本发明化合物作为掺杂材料的OLED器件效率和寿命得到提升。
对照试验:
实施例1-21
本发明有机电致发光器件结构包括基层、阳极层、空穴注入层、空穴传输层、发光层、电子传输层/空穴阻挡层、电子注入层、阴极电极层。
基层可以使用传统有机发光有机电致发光器件中的基板,例如:玻璃或塑料。
阳极层材料可以采用透明的高导电性材料,例如铟锡氧(ITO)、铟锌氧(IZO)、二氧化锡(SnO2)、氧化锌(ZnO)等。在本发明的实施例的有机电致发光器件制作中选用玻璃基板,ITO作阳极材料。
空穴传输区域可以是由单一材料形成的单层结构、多种不同材料形成的单层结构或者是由多种不同材料形成的多层结构,例如,空穴传输区域可以是由不同材料形成的单层结构,或者可以具有空穴注入层/空穴传输层的结构、空穴注入层/空穴传输层/缓冲层的结构,空穴传输层采用N,N’-二(3-甲苯基)-N,N’-二苯基-[1,1-联苯基]-4,4’-二胺(TPD)或N,N’-二苯基-N,N’-二(1-萘基)-(1,1’-联苯基)-4,4’-二胺(NPB)等三芳胺类材料。其中NPB是常用的空穴传输材料,在本发明实施例的有机电致发光器件制作中所选用的空穴传输材料选用NPB。
有机电致发光器件结构可以为单发光层也可以是多发光层结构。本发明实施例中采用了单发光层的结构。本发明的有机电致发光器件的发光层,包含主体材料和掺杂材料。主体材料可由单一材料构成,也可以由多种不同结构的材料混合而成;掺杂材料为本发明实施例中含硼元素的有机化合物,其单线态和三线态能级差不大于0.3eV,主体材料的单线态和三线态能级高于掺杂材料;其中,优选最低发光能量主体材料膜相态单线态和三线态能级差不大于0.2eV;其中,优选发光层主体材料由单一材料组成,所述掺杂材料的质量掺杂浓度为3%~30%;其中,优选当发光层主体材料由两种不同结构的材料混合而成,两者的质量比为1:10~10:1;且所述掺杂材料的质量掺杂浓度为3%~30%;其中,优选发光层中掺杂材料的质量掺杂浓度为5%-15%,并优选为6%。
电子传输区域包括空穴阻挡层、电子传输层和电子注入层中的一种或多种;例如,电子传输区域可以具有电子传输层/电子注入层的结构、空穴阻挡层/电子传输层/电子注入层的结构,但不限于此;电子传输层采用Alq3或者TAZ或者TPBi或者取自这三种材料的任意两种的搭配。
在本发明实施例的有机电致发光器件制作中选用阴极材料是LiF/Al。
本发明中使用的几种材料具体结构见下:
器件1-21具体制备过程如下:
清洗透明玻璃基板层上的ITO阳极层,分别用去离子水、丙酮、乙醇超声清洗各15分钟,然后在等离子体清洗器中处理2分钟;
在ITO阳极层2上,蒸镀HAT-CN,膜厚10nm,该层为空穴注入层;接着,蒸镀NPB膜厚50nm,该层作为空穴传输层;
接着,蒸镀40nm的发光层:其中,mCBP主体材料,化合物1-21作为掺杂材料,掺杂质量浓度为6%,分别制作元件1-21;
在发光层之上,通过真空蒸镀方式蒸镀TPBi,厚度为35nm,这层有机材料作为空穴阻挡/电子传输层;在空穴阻挡/电子传输层之上,真空蒸镀电子注入层LiF,厚度为1nm,该层为电子注入层;在电子注入层之上,真空蒸镀阴极Al(80nm),该层为阴极电极层。
对比例1
制备有机发光元件22:与实施例1-21制备的有机发光元件1-21的区别在于:在有机发光元件22的发光层中以DSA-ph作为掺杂材料,掺杂质量浓度为6%,其余相同。
对比例1制备的有机发光元件22的结构为:
ITO/HAT-CN/NPB/mCBP:DSA-ph/TPBi/LiF/Al。
对比例2
制备有机发光元件23:与实施例1-21制备的有机发光元件1-21的区别在于:在有机发光元件23的发光层中以TADF-1作为掺杂材料,掺杂质量浓度为6%,其余相同。
对比例1制备的有机发光元件23的结构为:
ITO/HAT-CN/NPB/mCBP:TADF-1/TPBi/LiF/Al。
本发明实施例的化合物及对比例的器件结构如下表2:
表2:器件结构表
性能测试
将本发明实施例1-21制备的有机发光元件1-21和对比例1、2制备的元件22、23进行如下性能测试,性能测试结果如表3所示。
表3:性能测试结果
由表3的性能数据可知,本发明的实施例提供的含硼化合物相比传统荧光材料,能够充分利用三线态能量,从而大幅度提高器件效率。相对于已知的TADF材料而言,含硼化合物的光谱半峰宽显著降低,其色纯度得到明显提高;器件效率滚降现象得到明显抑制,器件寿命提高明显。
以上内容是结合具体的优选实施方式对本发明所作的进一步详细说明,不能认定本发明的具体实施只局限于这些说明。对于本发明所属技术领域的普通技术人员来说,在不脱离本发明构思的前提下,还可以做出若干简单推演或替换,都应当视为属于本发明的保护范围。
Claims (10)
2.根据权利要求1所述的发光层掺杂材料,其特征在于:所述R1、R2和R3不同时为氢。
3.根据权利要求1所述的发光层掺杂材料,其特征在于:所述R1、R2和R3中至少一个为氢。
9.一种有机电致发光器件,其特征在于:所述有机电致发光器件中包括根据权利要求1-8任一项所述的发光层掺杂材料。
10.根据权利要求9所述的有机电致发光器件,其特征在于:所述有机电致发光器件的发光层中包括所述的发光层掺杂材料。
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