CN114150273A - Vapor deposition apparatus and vapor deposition method - Google Patents

Vapor deposition apparatus and vapor deposition method Download PDF

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Publication number
CN114150273A
CN114150273A CN202111516097.8A CN202111516097A CN114150273A CN 114150273 A CN114150273 A CN 114150273A CN 202111516097 A CN202111516097 A CN 202111516097A CN 114150273 A CN114150273 A CN 114150273A
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CN
China
Prior art keywords
switch
opening
crucible
substrate
baffle
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Pending
Application number
CN202111516097.8A
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Chinese (zh)
Inventor
匡友元
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Application filed by Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority to CN202111516097.8A priority Critical patent/CN114150273A/en
Publication of CN114150273A publication Critical patent/CN114150273A/en
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition

Abstract

The embodiment of the application discloses coating by vaporization device and coating by vaporization method, in the coating by vaporization device, the chamber baffle includes the switch block, the switch block includes first switch and second switch at least, first switch includes first opening, the second switch includes the second opening, first switch and second switch can switch between open and closed state respectively, first switch corresponds the setting with first crucible, the second switch corresponds the setting with the second crucible, through the opening and closing of first switch and second switch on the control chamber baffle, the coating by vaporization layer that different positions on a base plate that can be convenient form corresponding crucible respectively, just can realize the coating by vaporization layer calibration of a plurality of crucibles in the coating by vaporization device through a base plate, compare in prior art, can reduce the quantity of the base plate that the calibration used, calibration time has been reduced simultaneously, the productivity has been promoted.

Description

Vapor deposition apparatus and vapor deposition method
Technical Field
The application relates to the field of display, in particular to an evaporation device and an evaporation method.
Background
Organic light emitting display panels (OLEDs) have been widely used in daily life, and vapor deposition processes are required in the production of organic light emitting display panels, for example, various light emitting materials in red, green, and blue light emitting devices need to be formed by vapor deposition processes, and before the light emitting devices forming the display panels are produced by formal vapor deposition, calibration of vapor deposition film layers is required, including calibration of the thickness, uniformity, and the like of the film layers formed by vapor deposition, so as to form light emitting material film layers with preset thickness and uniform thickness in the light emitting devices of the display panels. The coating by vaporization device among the prior art includes that the base plate sets up the platform, the base plate sets up a plurality of source baffles of platform below, a plurality of crucibles of source baffle below, and each crucible and base plate set up all have a source baffle between the platform, when carrying out the calibration to the coating by vaporization layer, need carry out the calibration of coating by vaporization layer respectively to every crucible, when carrying out the calibration of coating by vaporization layer to first crucible: placing a first substrate on the substrate setting table, moving away a source baffle above a first crucible, keeping the source baffles above other crucibles in a closed state, then carrying out material evaporation on the first crucible, and measuring the performances such as thickness, uniformity and the like of a film layer formed by evaporation of the first crucible; when the second crucible is subjected to vapor deposition coating calibration: placing a second substrate on the substrate setting table, moving away the source baffle above the second crucible, keeping the source baffles above other crucibles in a closed state, then carrying out material evaporation on the second crucible, and measuring the performances such as thickness, uniformity and the like of a film layer formed by evaporation of the second crucible; and the calibration of the evaporated film layers of all the crucibles is finished by analogy in sequence.
However, in the prior art, different crucibles require different substrates to calibrate the vapor deposited film, the number of the crucibles is increased, the number of the substrates is increased, the waste of substrate resources is caused, and the calibration time is too long, thereby reducing the productivity.
Disclosure of Invention
The embodiment of the application provides an evaporation device and an evaporation method, and can solve the technical problems that in the process of calibrating evaporation coating layers in the prior art, different crucibles need different substrates to calibrate the evaporation coating layers, the more crucibles are, the more substrates are needed, the waste of substrate resources is caused, and meanwhile, the calibration time is too long, and the productivity is reduced.
The embodiment of the application provides a coating by vaporization device, include the shell, be located holding the chamber in the shell, and set up in hold the intracavity:
a substrate setting table;
the cavity baffle is arranged below the substrate setting table and detachably arranged in the accommodating cavity;
the crucible set is arranged below the cavity baffle plate and at least comprises a first crucible and a second crucible, and the first crucible and the second crucible are arranged below the cavity baffle plate in parallel;
the cavity baffle comprises a switch group, the switch group at least comprises a first switch and a second switch, the first switch at least comprises a first opening, the second switch at least comprises a second opening, the first switch and the second switch can be switched between an open state and a closed state respectively, the first switch corresponds to the first crucible, and the second switch corresponds to the second crucible.
Optionally, in some embodiments of the present application, the crucible holding device further includes a source baffle group, the source baffle group includes at least a first source baffle and a second source baffle, the first source baffle and the second source baffle are detachably disposed in the holding cavity, the first source baffle is disposed between the chamber baffle and the first crucible corresponding to the first crucible, and the second source baffle is disposed between the chamber baffle and the second crucible corresponding to the second crucible.
Optionally, in some embodiments of the present application, the shape of the first opening and the second opening includes at least one of a rectangle, a circle, a triangle, and a diamond.
Optionally, in some embodiments of the present application, when the substrate is disposed on the substrate disposing table, the substrate may move along a first direction;
the first opening and the second opening are arranged in a strip shape, and the length direction of the first opening and the length direction of the second opening are perpendicular to the first direction.
Optionally, in some embodiments of the present application, the first opening is composed of a plurality of first sub openings, and the plurality of first sub openings are arranged at intervals in a direction perpendicular to the first direction;
the second opening is composed of a plurality of second sub openings, and the plurality of second sub openings are arranged at intervals in the direction perpendicular to the first direction.
Optionally, in some embodiments of the present application, the first switch further includes a first cover disposed corresponding to the first opening, and the first cover may open and close the first opening in a sliding or rotating manner;
the second switch also comprises a second cover body arranged corresponding to the second opening, and the second cover body can open and close the second opening in a sliding or rotating mode.
Optionally, in some embodiments of the present application, an orthographic projection of the first source baffle on the chamber baffle and an orthographic projection of the second source baffle on the chamber baffle have overlapping projection locations, and the overlapping projection locations are not overlapped with the first opening and the second opening.
Correspondingly, an embodiment of the present application further provides an evaporation method, which uses the evaporation device described in any one of the above to perform evaporation, and includes the following steps:
step S100: fixedly arranging a substrate on the substrate arrangement table;
step S200: opening the first switch, closing the second switch, and evaporating the evaporation material in the first crucible to a first part of the substrate through the first opening;
step S300: closing the first switch and opening the second switch, and evaporating the evaporation material in the second crucible to a second part of the substrate through the second opening, wherein the first part is different from the second part.
Optionally, in some embodiments of the present application, the step S200 includes disposing the substrate at a first position, and the step S300 further includes: moving the substrate to a second position, the first position being different from the second position.
Optionally, in some embodiments of the present application, the method further includes the following steps:
step S400: and removing the substrate from the evaporation device, measuring the thickness of the film layer formed by evaporation at the first part, and measuring the thickness of the film layer formed by evaporation at the second part.
In the embodiment of the application, the embodiment of the application provides a vapor deposition device and a vapor deposition method, in the vapor deposition device, a cavity baffle is arranged between a plurality of source baffles and a substrate setting table, the cavity baffle is detachably arranged in a containing cavity, the cavity baffle comprises a switch group, the switch group at least comprises a first switch and a second switch, the first switch comprises a first opening, the second switch comprises a second opening, the first switch and the second switch can be respectively switched between an opening state and a closing state, the first switch is arranged corresponding to a first crucible, the second switch is arranged corresponding to a second crucible, vapor deposition layers corresponding to the crucibles can be conveniently formed at different positions on one substrate respectively by controlling the opening and closing of the first switch and the second switch on the cavity baffle, and vapor deposition layer calibration of a plurality of crucibles in the vapor deposition device can be realized through one substrate, compared with the prior art, the number of the base plates used for calibration can be reduced, resource waste is avoided, calibration time is shortened, and productivity is improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic view of a first structure of an evaporation apparatus according to an embodiment of the present disclosure;
fig. 2 is a schematic view of a second structure of an evaporation apparatus according to an embodiment of the present disclosure;
FIG. 3 is a first schematic top view of a chamber shield according to an embodiment of the present application;
FIG. 4 is a second schematic top view of a chamber shield according to an embodiment of the present application;
fig. 5 is a schematic view illustrating a first flow step of an evaporation method according to an embodiment of the present disclosure;
fig. 6 is a schematic view illustrating a first process of an evaporation method according to an embodiment of the present disclosure;
fig. 7 is a schematic view illustrating a second process of an evaporation method according to an embodiment of the present disclosure;
FIG. 8 is a schematic view of a vapor deposited film on a substrate according to one embodiment of the present application;
fig. 9 is a schematic view illustrating a second flow step of an evaporation method according to an embodiment of the present disclosure.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application. Furthermore, it should be understood that the detailed description and specific examples, while indicating exemplary embodiments of the invention, are given by way of illustration and explanation only, and are not intended to limit the scope of the invention. In the present application, unless indicated to the contrary, the use of the directional terms "upper" and "lower" generally refer to the upper and lower positions of the device in actual use or operation, and more particularly to the orientation of the figures of the drawings; while "inner" and "outer" are with respect to the outline of the device.
The embodiment of the application provides an evaporation device, hold the chamber including shell, shell in, still include: a substrate setting table; the cavity baffle is arranged below the substrate setting table and detachably arranged in the accommodating cavity; the crucible set is arranged below the cavity baffle plate and comprises a first crucible and a second crucible which are arranged below the cavity baffle plate in parallel; the cavity baffle comprises a switch group, the switch group at least comprises a first switch and a second switch, the first switch comprises a first opening, the second switch comprises a second opening, the first switch and the second switch can be switched between an open state and a closed state respectively, the first switch is arranged corresponding to the first crucible, and the second switch is arranged corresponding to the second crucible.
The embodiment of the application provides an evaporation device and an evaporation method. The following are detailed below. It should be noted that the following description of the embodiments is not intended to limit the preferred order of the embodiments.
The first embodiment,
Referring to fig. 1, fig. 2, fig. 3, and fig. 4, fig. 1 is a first structural schematic diagram of an evaporation apparatus 1000 according to an embodiment of the present disclosure; fig. 2 is a second structural schematic diagram of an evaporation apparatus 1000 according to an embodiment of the present disclosure; FIG. 3 is a first schematic top view of a chamber shield 20 according to an embodiment of the present disclosure; fig. 4 is a second schematic top view of the chamber shield 20 according to the embodiment of the present application.
The present embodiment provides an evaporation apparatus 1000, and the evaporation apparatus 1000 includes a housing 1001, a housing cavity 1002 located in the housing 1001, and the evaporation apparatus 1000 further includes a substrate setting table 10, a cavity baffle 20, a source baffle 30, and a crucible set 40 disposed in the housing cavity 1002. The cavity baffle 20 is arranged below the substrate arranging table 10, and the cavity baffle 20 is detachably arranged in the accommodating cavity 1002; the crucible set 40 is arranged below the cavity baffle 20, the crucible set 40 at least comprises a first crucible 41 and a second crucible 42, and the first crucible 41 and the second crucible 42 are arranged below the cavity baffle 20 in parallel; the cavity baffle 20 comprises a switch group 201, the switch group 201 at least comprises a first switch 21 and a second switch 22, the first switch 21 comprises a first opening 211, the second switch 22 comprises a second opening 221, the first switch 21 and the second switch 22 can be switched between an open state and a closed state respectively, the first switch 21 and the first crucible 41 are arranged correspondingly, and the second switch 22 and the second crucible 42 are arranged correspondingly.
Specifically, the evaporation device 1000 further includes a substrate setting table 10 disposed in the accommodating chamber 1002, the substrate setting table 10 fixes the substrate 100 by adsorption or adhesion, the substrate 100 is disposed between the substrate setting table 10 and the crucible group 40, and a surface of the substrate 100 on which an evaporation coating layer is to be formed faces the crucible group 40.
Specifically, the crucible set 40 is disposed below the cavity dam 20, the crucible set 40 includes at least a first crucible 41 and a second crucible 42, and the crucible set may further include more than two crucibles, which are exemplified by the first crucible 41 and the second crucible 42.
Specifically, the first crucible 41 and the second crucible 42 are arranged in parallel below the chamber baffle 20, the first crucible 41 and the second crucible 42 are arranged in parallel, and the first crucible 41 and the second crucible 42 can simultaneously form a vapor deposition film on the surface of the substrate 100.
Specifically, the chamber baffle 20 includes a switch group 201, the switch group 201 includes at least a first switch 21 and a second switch 22, the chamber baffle 20 includes one or more switches corresponding to one crucible, and in the present embodiment, the explanation is given by taking an example in which the first crucible 41 corresponds to one switch and the second crucible 42 corresponds to one switch.
Specifically, the first switch 21 at least includes the first opening 211, and the second switch 22 at least includes the second opening 221, that is, each switch includes one or more openings, in the embodiment, the first switch 21 includes the first opening 211, and the second switch 22 includes the second opening 221.
Specifically, the first switch 21 is disposed in alignment with the first crucible 41, and when the first switch 21 is turned on, the evaporation material in the first crucible 41 can pass through the first opening 211 to form a corresponding evaporation film layer on the surface of the substrate 100.
Specifically, the second switch 22 is disposed in alignment with the second crucible 42, and when the second switch 22 is opened, the evaporation material in the second crucible 42 can pass through the second opening 221 to form a corresponding evaporation film layer on the surface of the substrate 100.
Specifically, the opening and closing of the first opening 211 can be controlled by controlling the opening and closing of the first switch 21; the opening and closing of the second opening 221 can be controlled by controlling the opening and closing of the second switch 22.
As shown in fig. 1, fig. 1 illustrates a conceptual diagram of a first switch 21 and a second switch 22 in the vapor deposition device provided in this embodiment; as shown in fig. 2, fig. 2 illustrates an exemplary specific structure of a first switch 21 and a second switch 22 in the evaporation apparatus provided in this embodiment.
In some embodiments, the first switch 21 further includes a first cover 212 disposed corresponding to the first opening 211, and the first cover 212 can open and close the first opening 211 in a sliding or rotating manner; the second switch 22 further includes a second cover 222 disposed corresponding to the second opening 221, and the second cover 222 can open and close the second opening 221 in a sliding or rotating manner.
Specifically, fig. 2 illustrates that the first cover 212 closes the first opening 211, and the first cover 212 can open the first opening 211 by sliding left or right; the first cover 212 can open the first opening 211 by sliding and rotating.
Specifically, fig. 2 illustrates that the second cover 222 closes the second opening 221, and the second cover 222 can open the second opening 221 by sliding left or right; the second cover 222 can open the second opening 221 by rotating and sliding.
Specifically, the manner in which the first switch 21 opens or closes the first opening 211 is not limited to the above, and the manner in which the second switch 22 opens or closes the second opening 221 is not limited to the above.
In some embodiments, the shape of the first opening 211 and the second opening 221 comprises at least one of a rectangle, a circle, a triangle, a diamond.
In some embodiments, as shown in fig. 2 and 3, when the substrate 100 is disposed on the substrate disposing table 10, the substrate 100 may move along the first direction 110; the first opening 211 and the second opening 221 are both arranged in a strip shape, and the length direction of the first opening 211 and the length direction of the second opening 221 are both perpendicular to the first direction.
In some embodiments, as shown in fig. 4, the first opening 211 is composed of a plurality of first sub-openings 2111, and the plurality of first sub-openings 2111 are arranged at intervals perpendicular to the first direction 110; the second opening 221 is composed of a plurality of second sub-openings 2211, and the plurality of second sub-openings 2211 are arranged at intervals perpendicular to the first direction 110.
In some embodiments, further, the evaporation device 1000 further comprises a source baffle group 30, the source baffle group 30 comprises at least a first source baffle 31 and a second source baffle 32, the first source baffle 31 and the second source baffle 32 are detachably arranged in the accommodating cavity 1002, the first source baffle 31 is arranged between the cavity baffle 20 and the first crucible 41 corresponding to the first crucible 41, and the second source baffle 32 is arranged between the cavity baffle 20 and the second crucible 42 corresponding to the second crucible 42.
Specifically, the source baffle group 30 includes two or more source baffles, and the source baffle group 30 includes two source baffles in this embodiment.
Specifically, the first source baffle 31 is disposed between the chamber baffle 20 and the first crucible 41 corresponding to the first crucible 41, that is, the first source baffle 31 is used to open or close the first crucible 41, for example, when the first source baffle 31 moves out of the accommodating chamber 1002, the first crucible 41 can form a film layer of the evaporation material on the surface of the substrate 100; when the first source shutter 31 is not moved out of the accommodating chamber 1002, the first crucible 41 cannot form a film layer of the evaporation material to the surface of the substrate 100 due to the shielding of the first source shutter 31. Similarly, the second source baffle 32 functions in the same or similar way as the first source baffle 31, and is not described in detail herein.
In some embodiments, further, an orthographic projection of the first source baffle 31 on the chamber baffle 20 and an orthographic projection of the second source baffle 32 on the chamber baffle 20 have overlapping projection locations that do not overlap with both the first opening 211 and the second opening 221.
Specifically, the orthographic projection of the first source baffle 31 on the chamber baffle 20 and the orthographic projection of the second source baffle 32 on the chamber baffle 20 have overlapped projection portions, and the overlapped projection portions are not overlapped with the first opening 211 and the second opening 221, so that after the first source baffle 31 is removed, the second source baffle 32 does not shield the first crucible 41 from forming the evaporated film layer on the surface of the substrate through the first opening 211.
In the embodiment of the present application, various embodiments of an evaporation apparatus 1000 are provided, in the evaporation apparatus 1000, a chamber baffle is disposed between a plurality of source baffles 30 and a substrate setting table 10, the chamber baffle 20 includes a switch group 201, the switch group 201 at least includes a first switch 21 and a second switch 22, the first switch 21 includes a first opening 211, the second switch 22 includes a second opening 221, the first switch 21 and the second switch 22 can be switched between an open state and a closed state respectively, the first switch 21 is disposed corresponding to the first crucible 41, the second switch 22 is disposed corresponding to the second crucible 42, by controlling the first switch 21 and the second switch 22 on the chamber baffle 20 to be opened and closed respectively, evaporation layers corresponding to the crucibles can be formed on different positions on one substrate 100 respectively, and the evaporation layer calibration of a plurality of crucibles in the evaporation apparatus can be realized by one substrate, compared with the prior art, the number of the substrates used for calibration can be reduced, resource waste is avoided, and meanwhile, the time for setting the plurality of substrates in the accommodating cavity 1002 and moving the plurality of substrates out of the accommodating cavity 1002 is reduced, so that the calibration time is shortened, and the productivity is improved.
Example II,
Referring to fig. 5, fig. 6, fig. 7, and fig. 8, fig. 5 is a schematic diagram illustrating a first flow step of an evaporation method according to an embodiment of the present disclosure; fig. 6 is a schematic view illustrating a first process of an evaporation method according to an embodiment of the present disclosure; fig. 7 is a schematic process diagram of a second evaporation method according to an embodiment of the present disclosure;
fig. 8 is a schematic view of a vapor deposited film layer on a substrate according to an embodiment of the present disclosure.
The present embodiment provides an evaporation method, which uses the evaporation apparatus 1000 of any one of the first embodiments to perform evaporation, and includes the following steps: step S100, step S200, and step S300.
Step S100: the substrate is fixedly arranged on the substrate setting table.
Specifically, a substrate 1000 is provided and placed on the substrate placement table 10, with the substrate 10 actually being placed between the crucible set 40 and the substrate placement table 10.
Step S200: and opening the first switch, closing the second switch, and evaporating the evaporation material in the first crucible to the first part of the substrate through the first opening.
Specifically, as shown in fig. 6, the first source baffle 31 is moved out of the accommodating chamber 1002, and the second source baffle 32 is kept in place in the accommodating chamber 1002.
Specifically, as shown in fig. 6, the first switch 21 is turned on so that the first opening 211 is opened, and the second switch 22 is turned off so that the second opening 221 is closed.
Specifically, the evaporation material in the first crucible 41 is evaporated to the first portion 101 of the substrate 100 through the first opening 211.
Step S300: and closing the first switch, opening the second switch, and evaporating the evaporation material in the second crucible to a second part of the substrate through the second opening, wherein the first part is different from the second part.
Specifically, as shown in fig. 7, the second source baffle 32 is moved out of the accommodating chamber 1002, and the position of the first source baffle 31 in the accommodating chamber 1002 is maintained.
Specifically, as shown in fig. 7, the second switch 22 is opened so that the second opening 221 is opened, and the first switch 21 is closed so that the first opening 211 is closed.
Specifically, the evaporation material in the second crucible 42 is evaporated to the second portion 102 of the substrate 100 through the second opening 221.
Specifically, the first site 101 is different from the second site 102 on the substrate 100.
Specifically, as shown in fig. 8, the vapor-deposited film layer of the first portion 101 and the vapor-deposited film layer of the second portion 102 are illustrated.
In some embodiments, the step S200 includes disposing the substrate 100 at the first position, and the step S300 further includes: the substrate 100 is moved to a second position, the first position being different from the second position.
Specifically, the substrate 100 may be moved in the first direction 110 to make the first portion 101 different from the second portion 102, or to increase the distance between the first portion 101 and the second portion 102, so as to prevent the evaporation coating layer on the first portion 101 and the evaporation coating layer on the second portion 102 from interfering with each other.
In the embodiment of the present application, an evaporation method is provided, where the evaporation device of any one of the first embodiment is used for evaporation, and by respectively controlling the opening and closing of the first switch 21 and the second switch 22 on the cavity baffle 20, evaporation coating layers corresponding to crucibles can be conveniently formed at different positions on one substrate 100, so that the calibration of the evaporation coating layers of a plurality of crucibles in the evaporation device can be realized through one substrate.
Example III,
This embodiment is the same as or similar to the embodiment, except that: the evaporation method further includes step S400.
Referring to fig. 9, fig. 9 is a schematic view illustrating a second flow step of an evaporation method according to an embodiment of the present disclosure.
The evaporation method provided in this embodiment is after step S300 of the second embodiment, and further includes step S400.
Step S400: and removing the substrate from the evaporation device, measuring the thickness of the film layer formed by evaporation at the first part, and measuring the thickness of the film layer formed by evaporation at the second part.
Specifically, the first portion 101 of the substrate 100 forms the evaporated film layer of the first crucible 41, and the second portion 102 of the substrate 100 forms the evaporated film layer of the second crucible 42.
Specifically, the substrate 100 is moved out of the evaporation apparatus 1000, and the thickness uniformity of the evaporation film layers of the first portion 101 and the second portion 102 can be tested to obtain a result that whether the thickness and the thickness uniformity of the evaporation film layer of the first portion 101 meet the preset values or not, and whether the thickness and the thickness uniformity of the evaporation film layer of the second portion 102 meet the preset values or not, so as to complete the calibration of the evaporation film layer.
In the embodiment of the present application, an evaporation method or an evaporation coating layer calibration method is provided, which can conveniently calibrate evaporation coating layers corresponding to crucibles at a first portion and a second portion on a substrate 100, so that the evaporation coating layers of a plurality of crucibles in an evaporation device can be calibrated through one substrate.
The evaporation device and the evaporation method provided by the embodiments of the present application are described in detail above, and the principles and embodiments of the present application are explained herein by applying specific examples, and the description of the embodiments is only used to help understand the method and the core ideas of the present application; meanwhile, for those skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.

Claims (10)

1. The evaporation device is characterized by comprising a shell, a containing cavity positioned in the shell, and a vapor deposition device arranged in the containing cavity, wherein the vapor deposition device comprises:
a substrate setting table;
the cavity baffle is arranged below the substrate setting table and detachably arranged in the accommodating cavity;
the crucible set is arranged below the cavity baffle plate and at least comprises a first crucible and a second crucible, and the first crucible and the second crucible are arranged below the cavity baffle plate in parallel;
the cavity baffle comprises a switch group, the switch group at least comprises a first switch and a second switch, the first switch at least comprises a first opening, the second switch at least comprises a second opening, the first switch and the second switch can be switched between an open state and a closed state respectively, the first switch corresponds to the first crucible, and the second switch corresponds to the second crucible.
2. The vapor deposition apparatus according to claim 1, further comprising a source baffle group, wherein the source baffle group comprises at least a first source baffle and a second source baffle, the first source baffle and the second source baffle are detachably arranged in the accommodating chamber, the first source baffle is arranged between the chamber baffle and the first crucible corresponding to the first crucible, and the second source baffle is arranged between the chamber baffle and the second crucible corresponding to the second crucible.
3. The vapor deposition device according to claim 2, wherein a shape of the first opening and the second opening includes at least one of a rectangle, a circle, a triangle, and a diamond.
4. The vapor deposition apparatus according to claim 2, wherein the substrate is movable in a first direction when the substrate is placed on the substrate placing table;
the first opening and the second opening are arranged in a strip shape, and the length direction of the first opening and the length direction of the second opening are perpendicular to the first direction.
5. The vapor deposition apparatus according to claim 4, wherein the first opening is composed of a plurality of first sub-openings arranged at intervals in a direction perpendicular to the first direction;
the second opening is composed of a plurality of second sub openings, and the plurality of second sub openings are arranged at intervals in the direction perpendicular to the first direction.
6. The vapor deposition apparatus according to claim 1 or 2, wherein the first switch further comprises a first cover provided corresponding to the first opening, and the first cover is configured to open and close the first opening by sliding or rotating;
the second switch also comprises a second cover body arranged corresponding to the second opening, and the second cover body can open and close the second opening in a sliding or rotating mode.
7. The vapor deposition device according to claim 2, wherein an orthographic projection of the first source shutter on the chamber shutter and an orthographic projection of the second source shutter on the chamber shutter have overlapping projection portions, and the overlapping projection portions do not overlap with the first openings and the second openings.
8. An evaporation method using the evaporation apparatus according to any one of claims 1 to 7, comprising:
step S100: fixedly arranging a substrate on the substrate arrangement table;
step S200: opening the first switch, closing the second switch, and evaporating the evaporation material in the first crucible to a first part of the substrate through the first opening;
step S300: closing the first switch and opening the second switch, and evaporating the evaporation material in the second crucible to a second part of the substrate through the second opening, wherein the first part is different from the second part.
9. An evaporation method according to claim 8, wherein the step S200 includes disposing the substrate at a first position, and the step S300 further includes: moving the substrate to a second position, the first position being different from the second position.
10. The vapor deposition method according to claim 8, further comprising the steps of:
step S400: and removing the substrate from the evaporation device, measuring the thickness of the film layer formed by evaporation at the first part, and measuring the thickness of the film layer formed by evaporation at the second part.
CN202111516097.8A 2021-12-06 2021-12-06 Vapor deposition apparatus and vapor deposition method Pending CN114150273A (en)

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Publication number Priority date Publication date Assignee Title
JPH09143721A (en) * 1995-11-17 1997-06-03 Ishikawajima Harima Heavy Ind Co Ltd Continuous vacuum deposition device having shutter for multilayer film
KR20140038600A (en) * 2012-09-20 2014-03-31 주식회사 원익아이피에스 Thin film deposition chamber, substrate processing system and controlling method therefor
JP2015124440A (en) * 2013-12-27 2015-07-06 国立大学法人岩手大学 Small-sized vacuum vapor deposition device for analysis and deposition film analytical method during film formation
CN107779822A (en) * 2017-10-30 2018-03-09 深圳市华星光电半导体显示技术有限公司 Evaporation coating device and evaporation coating method
CN108060393A (en) * 2017-12-19 2018-05-22 成都亦道科技合伙企业（有限合伙） Metallic composite preparation facilities and preparation method thereof
CN110607504A (en) * 2018-06-15 2019-12-24 佳能特机株式会社 Film forming apparatus, film forming method, and electronic device manufacturing method
CN213803960U (en) * 2020-11-20 2021-07-27 江苏集萃有机光电技术研究所有限公司 Evaporation plating device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09143721A (en) * 1995-11-17 1997-06-03 Ishikawajima Harima Heavy Ind Co Ltd Continuous vacuum deposition device having shutter for multilayer film
KR20140038600A (en) * 2012-09-20 2014-03-31 주식회사 원익아이피에스 Thin film deposition chamber, substrate processing system and controlling method therefor
JP2015124440A (en) * 2013-12-27 2015-07-06 国立大学法人岩手大学 Small-sized vacuum vapor deposition device for analysis and deposition film analytical method during film formation
CN107779822A (en) * 2017-10-30 2018-03-09 深圳市华星光电半导体显示技术有限公司 Evaporation coating device and evaporation coating method
CN108060393A (en) * 2017-12-19 2018-05-22 成都亦道科技合伙企业（有限合伙） Metallic composite preparation facilities and preparation method thereof
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