CN114101210B - Cleaning device and cleaning process for cleaning indium phosphide crystals with low pollution - Google Patents

Cleaning device and cleaning process for cleaning indium phosphide crystals with low pollution Download PDF

Info

Publication number
CN114101210B
CN114101210B CN202210098931.4A CN202210098931A CN114101210B CN 114101210 B CN114101210 B CN 114101210B CN 202210098931 A CN202210098931 A CN 202210098931A CN 114101210 B CN114101210 B CN 114101210B
Authority
CN
China
Prior art keywords
material shaking
cleaning
wafer
bubbling
rod
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202210098931.4A
Other languages
Chinese (zh)
Other versions
CN114101210A (en
Inventor
潘功寰
顾正伟
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Zhongdi Semiconductor Material Co ltd
Original Assignee
Changzhou Dejiang Cnc Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Changzhou Dejiang Cnc Technology Co ltd filed Critical Changzhou Dejiang Cnc Technology Co ltd
Priority to CN202210098931.4A priority Critical patent/CN114101210B/en
Publication of CN114101210A publication Critical patent/CN114101210A/en
Application granted granted Critical
Publication of CN114101210B publication Critical patent/CN114101210B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/106—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by boiling the liquid
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/14—Removing waste, e.g. labels, from cleaning liquid; Regenerating cleaning liquids
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/02—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by distortion, beating, or vibration of the surface to be cleaned
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B21/00—Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects
    • F26B21/004—Nozzle assemblies; Air knives; Air distributors; Blow boxes
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B25/00—Details of general application not covered by group F26B21/00 or F26B23/00
    • F26B25/001—Handling, e.g. loading or unloading arrangements
    • F26B25/003—Handling, e.g. loading or unloading arrangements for articles
    • F26B25/004—Handling, e.g. loading or unloading arrangements for articles in the shape of discrete sheets
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B5/00—Drying solid materials or objects by processes not involving the application of heat
    • F26B5/14—Drying solid materials or objects by processes not involving the application of heat by applying pressure, e.g. wringing; by brushing; by wiping
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B9/00—Machines or apparatus for drying solid materials or objects at rest or with only local agitation; Domestic airing cupboards
    • F26B9/06—Machines or apparatus for drying solid materials or objects at rest or with only local agitation; Domestic airing cupboards in stationary drums or chambers
    • F26B9/08—Machines or apparatus for drying solid materials or objects at rest or with only local agitation; Domestic airing cupboards in stationary drums or chambers including agitating devices, e.g. pneumatic recirculation arrangements
    • F26B9/082—Machines or apparatus for drying solid materials or objects at rest or with only local agitation; Domestic airing cupboards in stationary drums or chambers including agitating devices, e.g. pneumatic recirculation arrangements mechanically agitating or recirculating the material being dried
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
    • B08B2203/007—Heating the liquid

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Molecular Biology (AREA)
  • Cleaning By Liquid Or Steam (AREA)

Abstract

The invention relates to the technical field of wafer cleaning, in particular to a cleaning device and a cleaning process for cleaning an indium phosphide crystal with low pollution. One of them low pollution washs belt cleaning device of indium phosphide crystal includes: the material shaking mechanism is suitable for supporting a wafer, the time delay mechanisms correspond to the material shaking mechanisms one by one, and the time delay mechanisms rotate in sequence to drive the material shaking mechanisms to rotate in sequence; the material pouring part is arranged at the position of the material shaking mechanism of the last shaking wafer and is linked with the last material shaking mechanism; after the wafer is flatly placed on each material shaking mechanism, each material shaking mechanism sequentially rotates to shake the wafer on the material shaking mechanism and scrape water stains on the bottom of the wafer; when the last time delay mechanism rotates for a circle, the last material shaking mechanism is driven to rotate so as to drive the material pouring part to drive the wafer to tilt.

Description

Cleaning device and cleaning process for cleaning indium phosphide crystals with low pollution
Technical Field
The invention relates to the technical field of wafer cleaning, in particular to a cleaning device and a cleaning process for cleaning an indium phosphide crystal with low pollution.
Background
Chinese patent, application No. CN201110352001.9, application date 2011.11.08, grant publication No. CN102456549B, grant publication date 2014.06.25, provides a method for cleaning an indium phosphide wafer, comprising the following steps: (1) treating the wafer with an aqueous ammonia solution containing H2O2 at-10 to 25 ℃; (2) washing the wafer with deionized water; (3) treating the wafer with a concentrated acid at-10 to 55 ℃; (4) washing the wafer with deionized water; (5) treating the wafer with an organic acid solution at-10 to 35 ℃; (6) washing the wafer with deionized water; and (7) drying the resulting wafer. The method not only can effectively reduce the particles and metal residues on the surface of the indium phosphide wafer, particularly the indium phosphide wafer with a special crystal orientation angle, but also can improve the corrosion uniformity of the surface and reduce the white haze value. The indium phosphide wafer obtained by the method can well meet the requirements of epitaxial growth of 'out-of-box and ready'.
However, when the wafer is dried, a contact area between the drying platform and the bottom of the wafer is too large, and a part of washing water remains between the wafer and the drying platform, thereby affecting the cleaning effect of the wafer.
In order to solve the problems, a cleaning device and a cleaning process for cleaning the indium phosphide crystal with low pollution need to be designed.
Disclosure of Invention
The invention aims to provide a cleaning device for cleaning indium phosphide crystals with low pollution.
In order to solve the technical problem, the invention provides a cleaning device for cleaning an indium phosphide crystal with low pollution, which comprises:
an ultrasonic cleaning section adapted to perform vibration cleaning of a wafer;
a bubbling part adapted to shake off impurities adhering to a wafer;
a draining section adapted to drain the wafer; and
the material shaking part is arranged above the water draining part and comprises a plurality of material shaking mechanisms and a plurality of time delay mechanisms, each material shaking mechanism is suitable for supporting a wafer, each time delay mechanism corresponds to each material shaking mechanism one by one, and each time delay mechanism rotates in sequence to drive each material shaking mechanism to rotate in sequence;
the material pouring part is arranged at the position of the material shaking mechanism of the last shaking wafer and is linked with the last material shaking mechanism; wherein
After the wafer is flatly placed on each material shaking mechanism, each material shaking mechanism sequentially rotates to shake the wafer on the material shaking mechanism and scrape water stain on the bottom of the wafer;
when the last time delay mechanism rotates for a circle, the last material shaking mechanism is driven to rotate so as to drive the material pouring part to drive the wafer to tilt.
Preferably, the material shaking mechanism comprises a material shaking rod rotatably connected above the water draining part, and the distance from the outer side wall of the material shaking rod to the rotation center of the material shaking rod is different;
at least one material shaking angle extending along the length direction of the material shaking rod; wherein
When the delay mechanism drives the material shaking rod to axially rotate, the material shaking angle is abutted against the bottom wall of the wafer and pushes the end part of the wafer to upwarp.
Preferably, the material shaking rod is rectangular, and a material shaking corner is fixed at each corner of the rectangle; after the workpiece is placed at the upper end of the material shaking rod, the material shaking rod is rotated to drive the circular arc track of the material shaking angle to rotate, and water stains on the bottom surface of the wafer are scraped towards the direction of the last material shaking rod.
Preferably, the material shaking angle is an elastic rubber strip, the cross section of the material shaking angle is oval, and the end of the long shaft end of the material shaking angle is fixed at the edge of the material shaking rod; wherein
When the material shaking rods rotate circumferentially, at least one material shaking angle is abutted to the bottom wall of the wafer so as to drive water stains on the bottom wall of the wafer to the direction of the last material shaking rod.
Preferably, a plurality of collecting grooves are formed in each rectangular surface of the material shaking rod at equal intervals, the collecting grooves are arranged along the length direction of the material shaking rod, and the collecting grooves are suitable for collecting water stains dropping to the end surfaces of the material shaking rod;
a plurality of air ducts are further formed in one end, far away from the time delay mechanism, of the material shaking rod, each air duct corresponds to one rectangular surface of the material shaking rod, and the air ducts are communicated with the collecting groove; wherein
When the material shaking rod axially rotates the collecting tank to be positioned in the 12-point position, the collecting tank is suitable for collecting water drops dropping from the crystals;
when the collecting groove rotates to the position of 2 points, the air passage is communicated and blows air outwards through the collecting groove.
Preferably, the delay mechanism includes: the rotary table is circular and is vertically arranged;
the rotating shaft is vertically fixed at the circle center of the turntable, and the other end of the rotating shaft is fixed at the rotating center of the material shaking rod;
the tooth columns are vertically fixed on one side wall of the rotary table, which is far away from the rotating shaft, and are annularly arranged along the axial direction of the rotary table;
the linkage teeth are vertically fixed on one side wall of the turntable, which is far away from the tooth columns, and the linkage teeth are arranged between any two tooth columns;
a driving motor is fixed below the turntable at the outermost side, and a driving wheel matched with the tooth column is fixed on a conveying shaft of the driving motor; wherein
When the driving wheel rotates circumferentially to drive the outermost rotary table to rotate for one circle, the linkage teeth on the inner wall of the outermost rotary table are abutted against the tooth columns of the middle rotary table so as to push the middle rotary table to rotate for one station;
when the middle rotary table rotates for a circle, the linkage teeth on the inner wall of the middle rotary table are abutted against the tooth column of the last rotary table so as to drive the last rotary table to rotate for a station.
Preferably, the material pouring part comprises: the material shaking device comprises a support column, a linkage rod, a containing block and a linkage block, wherein the containing block is rectangular, a placing groove is formed in one side, close to the material shaking rod, of the containing block, and the placing groove is formed in the width direction of the containing block;
the supporting columns are fixed at two ends of the accommodating block, and the placing groove is formed in one side, close to the material shaking rod, of the accommodating block;
the linkage rod is fixed at one end, close to the turntable, of the containing block, the linkage block is L-shaped, and the linkage block is fixed at the end part of the linkage rod; wherein
When the linkage tooth of the last turntable shaft is abutted against the linkage block, the linkage tooth pushes the linkage block to slide downwards in an arc manner, so that the containing block is driven by the linkage rod to synchronously rotate downwards in an arc manner by taking the support column as the shaft, and the end part of the wafer is driven to tilt.
Preferably, the ultrasonic cleaning unit includes: the ultrasonic cleaning device comprises a cleaning pool, a cleaning basket, a circulating pump, a filter and a plurality of ultrasonic generators, wherein the cleaning pool is rectangular and is hollow; a water inlet is formed in one side wall of the cleaning pool, and a plurality of sawtooth-shaped overflow ports are formed in the other side wall of the cleaning pool;
the circulating pump is communicated with the water outlet of the overflow port through a water pipe, the filter is communicated with the circulating pump through a water pipe, and the water inlet is communicated with the filter through a water pipe;
the ultrasonic generator is fixed on two side walls and an inner bottom wall of the cleaning pool, and the ultrasonic generator is suitable for cleaning the wafer through cleaning liquid in the cleaning pool;
the cleaning basket is wrapped by a grating bottom plate and a handle, the grating bottom plate is suitable for containing crystal workpieces, the handle is parallel to the grating bottom plate and is fixed above the grating bottom plate through a fixing column, and the length of the handle is greater than that of the cleaning pool; wherein
After the wafer is placed in the cleaning basket and placed in the cleaning pool, the ultrasonic generator works to clean the wafer;
the floating objects on the surface of the liquid in the cleaning pool flow to the filter through the overflow port, and the cleaning liquid is injected into the cleaning pool again after being filtered by the filter.
Preferably, the bubbling portion includes: the heating device comprises a bubbling tank, a bubbling fan, a bubbling pipe and a heating pipe, wherein the bubbling tank is rectangular and hollow, the heating pipe is fixed on one side of the bubbling tank, and the heating pipe is suitable for heating liquid in the bubbling tank;
the bubbling fan is fixed below the bubbling tank, the bubbling pipe is fixed on the inner bottom wall of the bubbling tank, the bubbling pipe is linked with the bubbling fan, and a plurality of air outlets are formed in the bubbling pipe; wherein
After the cleaning basket is placed in the bubbling tank, the bubbling tube continuously blows air into the bubbling tank to clean the wafer again.
On the other hand, the invention also provides a cleaning process of the cleaning device for cleaning the indium phosphide crystal with low pollution,
after the wafer is placed on the cleaning basket, the cleaning basket is placed in a cleaning pool, at the moment, the ultrasonic generator starts to work, and the ultrasonic generator cleans the crystal through the liquid in the cleaning pool;
after the ultrasonic cleaning is finished, pulling the handle and moving the cleaning basket into the bubbling tank from the cleaning tank, continuously blowing air to the bubbling tank by the bubbling pipe, and simultaneously heating liquid in the bubbling tank by the heating pipe so as to further clean the crystal;
after the cleaning is finished, the crystal is placed above the material shaking part to drain the cleaning liquid on the crystal; one end of the crystal is inserted into the placing groove, the crystal is horizontally placed on the material shaking rod, the driving motor drives the driving wheel to rotate circumferentially, the driving wheel drives the outermost turntable to rotate axially, the turntable drives the material shaking rod to rotate axially through the rotating shaft, and the material shaking rod rotates axially to enable the wafer to be in contact with each rectangular surface of the material shaking rod in sequence to shake the crystal; when the material shaking angles fixed at the edge angles of the material shaking rod rotate along with the circular arc of the material shaking rod, at least one material shaking angle is abutted against the bottom surface of the crystal and scrapes water stains on the crystal towards the direction of the accommodating block; meanwhile, when the collecting groove on the material shaking rod rotates to the position of 2 points from the position of 12 points, the air channel is conducted and blows air to the lower bottom surface of the crystal through the collecting groove so as to accelerate the draining effect.
The cleaning device for cleaning the indium phosphide crystal with low pollution has the beneficial effects that the effect of cleaning the wafer and drying the washing water on the surface of the wafer is achieved through the matching of the ultrasonic cleaning part, the bubbling part, the water draining part, the material shaking part and the material pouring part, after the wafer is cleaned through the matching of the ultrasonic cleaning part and the bubbling part, the wafer is placed at the upper end of the material shaking mechanism, and one end of the wafer is inserted into the material pouring part; the material shaking mechanism rotates in sequence to shake the wafer on the material shaking mechanism and scrape water stain on the bottom of the wafer, and meanwhile, the material shaking mechanism can blow air to the lower bottom surface of the wafer every time the material shaking mechanism rotates for one circle so as to accelerate the drying of washing water of the wafer; the time delay mechanism matched with the material shaking mechanism can drive the material shaking mechanism to rotate in sequence, when the last time delay mechanism rotates for a circle axially, the material pouring part is driven to rotate so as to tilt the wafer, and the dried wafer is convenient to clamp.
Drawings
The invention is further illustrated with reference to the following figures and examples.
FIG. 1 is a perspective view of a preferred embodiment of a cleaning apparatus for cleaning an indium phosphide crystal with low contamination according to the present invention;
fig. 2 is a perspective view of a draining part of the present invention;
FIG. 3 is a perspective view of the material shaking bar of the present invention;
FIG. 4 is a perspective view of an ultrasonic cleaning unit according to the present invention;
fig. 5 is a perspective view of the bubbling part of the present invention;
in the figure:
1. an ultrasonic cleaning section; 11. a cleaning tank; 12. cleaning the basket; 121. a grid floor; 122. a handle; 13. a circulation pump; 14. a filter; 15. an ultrasonic generator;
2. a bubbling part; 21. a bubbling tank; 22. a bubbling fan; 23. a bubbling tube; 24. heating a tube;
3. a draining part;
4. a material shaking part; 41. a material shaking mechanism; 411. shaking the material rod; 412. shaking the material corner; 413. collecting tank; 414. an air duct;
42. a time delay mechanism; 421. a turntable; 422. a rotating shaft; 423. a linkage tooth; 424. a tooth post; 425. a drive motor; 43. a blast duct;
5. a material pouring part; 51. a support pillar; 52. a linkage rod; 53. accommodating the block; 54. a linkage block; 55. and (6) placing the groove.
Detailed Description
The present invention will now be described in further detail with reference to the accompanying drawings. These drawings are simplified schematic views illustrating only the basic structure of the present invention in a schematic manner, and thus show only the constitution related to the present invention.
The first embodiment is as follows:
as shown in fig. 1 to 5, the present embodiment provides a cleaning apparatus for cleaning an indium phosphide crystal with low contamination, including: an ultrasonic cleaning unit 1, the ultrasonic cleaning unit 1 being adapted to perform vibration cleaning of a wafer; a bubbling part 2, wherein the bubbling part 2 is suitable for shaking off impurities adhered on the wafer; a draining section 3, the draining section 3 being adapted to drain the wafer; the material shaking part 4 is arranged above the water draining part 3, and the material shaking part 4 is suitable for accelerating the drying of water stains on the wafer; the material pouring part 5 is suitable for tilting the dried wafer from a horizontal state, so that subsequent clamping is convenient; the following is a detailed description of each component.
Material shaking part
The material shaking part 4 is arranged above the water draining part 3, the material shaking part 4 comprises a plurality of material shaking mechanisms 41 and a plurality of time delay mechanisms 42, specifically, the number of the material shaking mechanisms 41 and the number of the time delay mechanisms 42 are three, and one material shaking mechanism 41 corresponds to one time delay mechanism 42; when the delay mechanisms 42 axially rotate, the corresponding material shaking mechanisms 41 can be driven to axially rotate, and two adjacent delay mechanisms 42 are linked with each other, that is, one rotation of the outer delay mechanism 42 can drive the other adjacent inner delay mechanism 42 to axially rotate one station. Each material shaking mechanism 41 is suitable for supporting a wafer, and each time delay mechanism 42 rotates in sequence to drive each material shaking mechanism 41 to rotate in sequence; the material pouring part 5 is arranged at the position of the material shaking mechanism 41 of the last shaken wafer, and the material pouring part 5 is linked with the last material shaking mechanism 41; when the material shaking mechanism 41 axially rotates, at least one material shaking angle 412 arranged on the material shaking mechanism 41 abuts against the lower bottom surface of the wafer and scrapes water stains on the lower bottom surface of the wafer towards the direction of the material pouring part 5; when the last delay mechanism 42 rotates one turn, the last material shaking mechanism 41 is driven to rotate to drive the material pouring part 5 to lift the wafer.
Material shaking mechanism
The material shaking mechanism 41 comprises a material shaking rod 411 rotatably connected above the water draining part 3, the distance from the outer side wall of the material shaking rod 411 to the rotation center of the material shaking rod 411 is different, the longitudinal section of the material shaking rod 411 can be circular, oval or rectangular, and when the material shaking rod 411 is circular, the material shaking rod 411 is eccentric; when the material shaking rod 411 is designed to be an eccentric circle, an ellipse or a rectangle, when the material shaking rod 411 rotates for one circle, the material shaking rod 411 is suitable for driving the wafer to shake up and down, so that the draining effect of the residual cleaning solution on the wafer is accelerated; at least one material shaking corner 412, wherein the material shaking corner 412 extends along the length direction of the material shaking rod 411; the material shaking corners 412 are made of flexible materials, and when the material shaking rods 411 drive the material shaking corners 412 to synchronously rotate axially, and when the material shaking rods 411 are in contact with the lower bottom surface of the wafer, the material shaking corners 412 gradually deform and are attached to the lower bottom surface of the wafer; when the material shaking corners 412 are in a separated state from the bonding state, the material shaking rods 411 drive the material shaking corners 412 to rotate in an arc manner, and water stains on the lower bottom surface of the wafer can be scraped towards the material pouring part 5. When the delay mechanism 42 drives the material shaking rod 411 to axially rotate, the material shaking angle 412 is abutted against the bottom wall of the wafer and pushes the end part of the wafer to tilt upwards, because the material shaking rod 411 arranged at the outermost side has the fastest rotating speed, and when the material shaking rod 411 at the outermost side rotates for a circle, the material shaking rod 411 at the adjacent inner side rotates for a station, so that the end part of the wafer can be pushed to tilt upwards when the material shaking angle 412 is contacted with the wafer every time, and the effect of shaking the wafer up and down is realized.
Further, the material shaking rod 411 is rectangular, and a material shaking corner 412 is fixed at each corner of the rectangle; after a workpiece is placed at the upper end of the material shaking rod 411, the material shaking rod 411 is rotated to drive the circular arc track of the material shaking angle 412 to rotate, water stains on the bottom surface of the wafer are scraped to the direction of the last material shaking rod 411, and the drying efficiency of the residual inclined liquid on the bottom surface of the wafer is accelerated; the material shaking angle 412 is an elastic rubber strip, the cross section of the material shaking angle 412 is oval, and the end of the long shaft end of the material shaking angle 412 is fixed at the edge of the material shaking rod 411; when the material shaking rods 411 rotate circumferentially, at least one of the material shaking corners 412 abuts against the bottom wall of the wafer, so as to drive water stains on the bottom wall of the wafer towards the last material shaking rod 411. The number of the material shaking corners 412 is four, when the material shaking rod 411 rotates to two material shaking corners 412 to abut against the bottom surface of the wafer, the material shaking corners 412 are extruded and deformed by the wafer, and when the material shaking rod 411 continues to rotate to one material shaking corner 412 and the bottom surface of the wafer are separated, the material shaking corners 412 gradually return to an elliptical shape and scrape the residual cleaning solution on the bottom surface of the wafer towards the material pouring part 5.
In order to improve the drying effect of the wafer, a plurality of collecting grooves 413 are formed in each rectangular surface of the material shaking rod 411 at equal intervals, the plurality of collecting grooves 413 are arranged along the length direction of the material shaking rod 411, and the collecting grooves 413 are arranged to prevent residual cleaning solution on the wafer from being left on the rectangular surface of the material shaking rod 411 and being contacted with the lower bottom surface of the wafer again to be adhered to the lower bottom surface of the wafer. When the material shaking rod 411 rotates to two material shaking corners 412 and contacts with the lower bottom surface of the wafer, the cleaning liquid dropped on the wafer drops on the rectangular surface of the material shaking rod 411 and flows into the collecting groove 413, so that the cleaning liquid is not accumulated on the upper surface of the rectangular surface of the material shaking rod 411, and the cleaning liquid is prevented from being adhered to the lower bottom surface of the wafer for the second time. The collecting grooves 413 can be arranged in one or more rows according to the width of the rectangular surface of the material shaking rod 411. The collecting groove 413 is suitable for collecting water stains dropping to the end face of the material shaking rod 411; a plurality of air ducts 414 are further formed in one end of the material shaking rod 411, which is far away from the time delay mechanism 42, each air duct 414 corresponds to one rectangular surface of the material shaking rod 411, and the air ducts 414 are communicated with the collecting groove 413; wherein the shaking bar 411 axially rotates the collection trough 413 to be located at the "12 o' clock" position, and the collection trough 413 is suitable for collecting water drops dropping from the crystal; when the catch groove 413 is rotated to the "2 o' clock" orientation, the air passage 414 is opened and blows air out through the catch groove 413. A blowing pipe 43 is fixed at one end of the material shaking rod 411 far away from the time delay mechanism 42, one blowing pipe 43 corresponds to one material shaking rod 411, and the blowing pipe 43 is suitable for blowing air into the air duct 414; there is a gap between the air passage 414 and the bottom wall of the collecting groove 413, which provides a space for collecting the cleaning solution, so that when the air passage 414 blows out through the collecting groove 413, the cleaning solution collected by the bottom wall of the collecting groove 413 will not be blown to the bottom surface of the wafer by the air flow. When the cleaning device works, the material shaking rod 411 rotates to any row of collecting grooves 413 and rotates to the position of 12 points, at the moment, the two material shaking corners 412 are abutted against the lower bottom surface of the wafer, and the cleaning liquid dropping on the wafer falls into the collecting grooves 413; when the material shaking rod 411 continues to rotate from the collecting groove 413 to the position of "2 point", the air blowing pipeline 43 is communicated with the air channel 414 at the corresponding position and blows air into the collecting groove 413, so that the drying effect of the cleaning solution on the lower bottom surface of the wafer is accelerated, and meanwhile, the cleaning solution remaining on the lower bottom surface of the wafer is blown to the direction of the material pouring part 5. The cooperation of the collection groove 413 for blowing and the material shaking angle 412 improves the wiping effect of the material shaking angle 412.
Time delay mechanism
The delay mechanism 42 includes: the rotary table 421 is circular, and the rotary table 421 is vertically arranged; the rotating shaft 422 is vertically fixed at the center of the rotating disc 421, and the other end of the rotating shaft 422 is fixed at the rotating center of the material shaking rod 411; the plurality of tooth columns 424 are vertically fixed on a side wall of the rotating disc 421 away from the rotating shaft 422, and the plurality of tooth columns 424 are annularly arranged along the axial direction of the rotating disc 421; the linkage teeth 423 are vertically fixed on a side wall of the rotating disc 421 away from the tooth posts 424, and the linkage teeth 423 are arranged between any two tooth posts 424; the number of the rotating discs 421 is three, the three rotating discs 421 are linked with each other, and one rotating disc 421 corresponds to one material shaking rod 411; a driving motor 425 is fixed below the outermost rotary disc 421, and a driving wheel matched with the tooth column 424 is fixed on a conveying shaft of the driving motor 425; when the driving wheel rotates circumferentially to drive the outermost rotary disc 421 to rotate for one circle, the linkage teeth 423 on the inner wall of the outermost rotary disc 421 abut against the tooth columns 424 of the middle rotary disc 421 to push the middle rotary disc 421 to rotate for one station; when the middle rotary table 421 rotates a circle, the linkage teeth 423 on the inner wall of the middle rotary table 421 abut against the tooth column 424 of the last rotary table 421, so as to drive the last rotary table 421 to rotate a station. When the material shaking device works, the driving motor 425 drives the driving wheel to rotate circumferentially, the driving wheel rotates to synchronously drive one of the outermost turntables 421 to synchronously rotate axially, when the outermost turntable 421 rotates for a circle, the inner linkage teeth 423 of the outermost turntable drive the middle turntable 421 to rotate for a station, when the middle turntable 421 rotates for a circle, the inner linkage teeth 423 of the outermost turntable drive the innermost turntable 421 to rotate for a station, and when the three turntables 421 rotate axially, the corresponding material shaking rods 411 are synchronously driven to axially rotate.
Material pouring part
The material pouring part 5 includes: the material shaking device comprises a supporting column 51, a linkage rod 52, an accommodating block 53 and a linkage block 54, wherein the accommodating block 53 is rectangular, the length direction of the accommodating block 53 is consistent with that of the material shaking rod 411, the accommodating block 53 is parallel to the material shaking rod 411, and the arrangement height of the accommodating block 53 is greater than that of the material shaking rod 411; a placing groove 55 is formed in one side, close to the material shaking rod 411, of the accommodating block 53, the placing groove 55 is arranged along the width direction of the accommodating block 53, and the groove width of the placing groove 55 is larger than the thickness of the wafer, so that when the material shaking rod 411 pushes the other end of the wafer to shake, a gap is formed between the wafer inserted into the placing groove 55 and the inner wall of the placing groove 55, and the other end of the wafer can shake up and down conveniently; the supporting columns 51 are fixed at two ends of the accommodating blocks 53, and the placing grooves 55 are formed in one side, close to the material shaking rods 411, of the accommodating blocks 53; the linkage rod 52 is fixed at one end of the accommodating block 53 close to the rotating disc 421, the linkage block 54 is in an L shape, and the linkage block 54 is fixed at the end of the linkage rod 52; when the linkage tooth 423 of the last shaft of the turntable 421 abuts against the linkage block 54, the linkage tooth 423 pushes the linkage block 54 to slide downward in an arc, so as to drive the accommodating block 53 to synchronously rotate downward in an arc by taking the supporting column 51 as the shaft through the linkage rod 52, thereby driving the end of the wafer to tilt. During operation, when the innermost rotary table 421 axially rotates for one circle, the linkage teeth 423 abut against the linkage block 54, the rotary table 421 continuously rotates, the linkage teeth 423 push the linkage block 54 to move in a downward arc, the linkage block 54 pushes the accommodating block 53 through the linkage rod 52 to move downward by taking the supporting column 51 as an axial point, and thus, the wafer inserted into the placing groove 55 is tilted, so that the next process can clamp the workpiece conveniently.
Ultrasonic cleaning unit
The ultrasonic cleaning unit 1 includes: the wafer cleaning device comprises a cleaning pool 11, a cleaning basket 12, a circulating pump 13, a filter 14 and a plurality of ultrasonic generators 15, wherein the cleaning pool 11 is rectangular, the cleaning pool 11 is hollow, the upper end of the cleaning pool 11 is open, and cleaning liquid suitable for cleaning wafers is filled in the cleaning pool 11; a water inlet is formed in one side wall of the cleaning pool 11, a plurality of zigzag overflow ports are formed in the other side wall of the cleaning pool 11, when a wafer is placed in the cleaning basket 12 and placed in the cleaning pool 11, cleaning liquid in the cleaning pool 11 can overflow through the overflow ports, and therefore floating objects on the upper surface of the cleaning liquid can overflow through the overflow ports; the circulating pump 13 is communicated with a water outlet of the overflow port through a water pipe, the filter 14 is communicated with the circulating pump 13 through a water pipe, and the water inlet is communicated with the filter 14 through a water pipe; the cooperation of circulating pump 13 and filter 14 can filter the impurity that floats in wasing pond 11, and the washing liquid after the filtration continues to pour into in wasing pond 11 simultaneously, reaches the effect of recycling. The ultrasonic generator 15 is fixed on two side walls and an inner bottom wall of the cleaning pool 11, and the ultrasonic generator 15 is suitable for cleaning the wafer through the cleaning solution in the cleaning pool 11; the cleaning basket 12 is wrapped by a grid bottom plate 121 and a handle 122, the grid bottom plate 121 is suitable for containing crystal workpieces, the handle 122 is parallel to the grid bottom plate 121, the handle 122 is fixed above the grid bottom plate 121 through a fixing column, and the length of the handle 122 is greater than that of the cleaning pool 11; wherein the ultrasonic generator 15 is operated to clean the wafer after the wafer is placed in the cleaning basket 12 and placed in the cleaning bath 11; the floating objects on the liquid surface of the cleaning pool 11 flow to the filter 14 through the overflow port, and the cleaning liquid is injected into the cleaning pool 11 again after being filtered by the filter 14.
Bubbling part
The bubbling portion 2 includes: the device comprises a bubbling tank 21, a bubbling fan 22, a bubbling pipe 23 and a heating pipe 24, wherein the bubbling tank 21 is rectangular, and the bubbling tank 21 is hollow. The upper end of the bubbling tank 21 is open, the heating pipe 24 is fixed on one side of the bubbling tank 21, and the heating pipe 24 is suitable for heating the liquid in the bubbling tank 21; the bubbling fan 22 is fixed below the bubbling tank 21, the bubbling tube 23 is fixed on the inner bottom wall of the bubbling tank 21, the bubbling tube 23 is linked with the bubbling fan 22, and a plurality of air outlets are formed in the bubbling tube 23; wherein the wafer is cleaned again by continuously blowing air into the bubble tank 21 through the bubble tube 23 after the cleaning basket 12 is placed into the bubble tank 21.
In a second embodiment, the present embodiment further provides a cleaning process of a cleaning device for cleaning an indium phosphide crystal with low contamination, wherein the cleaning device for cleaning an indium phosphide crystal with low contamination is the same as the first embodiment, and details thereof are omitted here.
After the wafer is placed on the cleaning basket 12, the cleaning basket 12 is placed in the cleaning pool 11, after the floating objects containing impurities on the upper surface of the cleaning pool 11 are placed in the cleaning pool 11 along with the wafer, the floating objects overflow from an overflow port on the side wall of the cleaning pool 11, the overflowing cleaning liquid is filtered by the filter 14, and then the overflowing cleaning liquid is injected into the cleaning pool 11 again by the circulating pump 13; the ultrasonic generator 15 starts to work, and the ultrasonic generator 15 cleans the put crystal through the liquid in the cleaning pool 11; after the ultrasonic cleaning is finished, pulling the handle 122 and moving the cleaning basket 12 from the cleaning pool 11 to the bubbling pool 21, continuously blowing air to the bubbling pool 21 by the bubbling tube 23, simultaneously heating the liquid in the bubbling pool 21 by the heating tube 24, and further cleaning the crystal by the wafer in the bubbling pool 21 under the action of the bubbles blown by the bubbling tube 23; after the cleaning is finished, the crystal is horizontally placed at the upper ends of the three material shaking rods 411, and one end of the crystal is inserted into the placing groove 55; at this time, the driving motor 425 drives the driving wheel to rotate circumferentially, the driving wheel synchronously drives the outermost rotary table 421 to rotate axially, the rotary table 421 drives the material shaking rod 411 to rotate axially synchronously through the rotating shaft 422, and the material shaking rod 411 rotates axially to enable the wafer to sequentially contact with each rectangular surface of the material shaking rod 411 and the material shaking angle 412 to shake the crystal; when the material shaking rod 411 rotates to any row of collecting grooves 413 and rotates to the position of 12 points, the two material shaking angles 412 are abutted against the lower bottom surface of the wafer, and the cleaning solution dropping on the wafer falls into the collecting grooves 413; when the material shaking rod 411 continues to rotate from the collecting groove 413 to the position of "2 point", the air blowing pipeline 43 is communicated with the air channel 414 at the corresponding position and blows air into the collecting groove 413, so that the drying effect of the cleaning solution on the lower bottom surface of the wafer is accelerated, and meanwhile, the cleaning solution remaining on the lower bottom surface of the wafer is blown to the direction of the material pouring part 5. When the innermost rotary table 421 axially rotates for one turn, the linkage teeth 423 at the corresponding position abut against the linkage block 54, the rotary table 421 continuously rotates, the linkage teeth 423 push the linkage block 54 to move in a downward arc, the linkage block 54 pushes the accommodating block 53 through the linkage rod 52 to move downward with the supporting column 51 as an axis point, and thus, the wafer inserted into the placing groove 55 is tilted, and a workpiece can be conveniently clamped in the next process.
In light of the foregoing description of the preferred embodiment of the present invention, it is to be understood that various changes and modifications may be made by one skilled in the art without departing from the spirit and scope of the invention. The technical scope of the present invention is not limited to the content of the specification, and must be determined according to the scope of the claims.

Claims (10)

1. A low-pollution cleaning device for cleaning indium phosphide crystals is characterized by comprising:
an ultrasonic cleaning section (1), wherein the ultrasonic cleaning section (1) is suitable for cleaning a wafer by vibration;
a bubbling section (2), wherein the bubbling section (2) is suitable for shaking off impurities adhered to the wafer;
a draining section (3), said draining section (3) being adapted to drain the wafer; and
the material shaking part (4) is arranged above the water draining part (3), the material shaking part (4) comprises a plurality of material shaking mechanisms (41) and a plurality of time delay mechanisms (42), each material shaking mechanism (41) is suitable for supporting a wafer, each time delay mechanism (42) corresponds to each material shaking mechanism (41) one by one, and each time delay mechanism (42) rotates in sequence to drive each material shaking mechanism (41) to rotate in sequence;
the material pouring part (5), the material pouring part (5) is arranged at the position of the material shaking mechanism (41) of the last shaking wafer, and the material pouring part (5) is linked with the last material shaking mechanism (41); wherein
After the wafer is flatly placed on each material shaking mechanism (41), each material shaking mechanism (41) rotates in sequence to shake the wafer on the material shaking mechanism and scrape water stain on the bottom of the wafer;
when the last time delay mechanism (42) rotates for a circle, the last material shaking mechanism (41) is driven to rotate so as to drive the material pouring part (5) to drive the wafer to tilt.
2. The cleaning device for cleaning the indium phosphide crystal with low pollution as claimed in claim 1,
the material shaking mechanism (41) comprises a material shaking rod (411) rotatably connected above the water draining part (3), and the distance from the outer side wall of the material shaking rod (411) to the rotation center of the material shaking rod (411) is different;
at least one material shaking corner (412), wherein the material shaking corner (412) extends along the length direction of the material shaking rod (411); wherein
When the delay mechanism (42) drives the material shaking rod (411) to axially rotate, the material shaking angle (412) is abutted against the bottom wall of the wafer and pushes the end part of the wafer to tilt upwards.
3. The cleaning device for cleaning the indium phosphide crystal with low pollution as claimed in claim 2,
the material shaking rod (411) is rectangular, and a material shaking corner (412) is fixed at each corner of the rectangle; after the workpiece is placed at the upper end of the material shaking rod (411), the material shaking rod (411) is rotated to drive the circular arc track of the material shaking angle (412) to rotate, and water stains on the bottom surface of the wafer are scraped to the direction of the last material shaking rod (411).
4. The cleaning device for cleaning the indium phosphide crystal with low pollution as claimed in claim 3,
the material shaking corners (412) are elastic rubber strips, the cross sections of the material shaking corners (412) are oval, and the end parts of the long axis ends of the material shaking corners (412) are fixed at the edges and corners of the material shaking rods (411); wherein
When the material shaking rods (411) rotate in the circumferential direction, at least one material shaking angle (412) is abutted against the bottom wall of the wafer so as to drive water stains on the bottom wall of the wafer to the direction of the last material shaking rod (411).
5. The cleaning device for cleaning the indium phosphide crystal with low pollution as claimed in claim 4,
a plurality of collecting grooves (413) are formed in each rectangular surface of the material shaking rod (411) at equal intervals, the collecting grooves (413) are arranged along the length direction of the material shaking rod (411), and the collecting grooves (413) are suitable for collecting water stains dropping to the end face of the material shaking rod (411);
a plurality of air channels (414) are further formed in one end, away from the delay mechanism (42), of the material shaking rod (411), each air channel (414) corresponds to one rectangular surface of the material shaking rod (411), and the air channels (414) are communicated with the collecting groove (413); wherein
When the material shaking rod (411) axially rotates the collecting groove (413) to be positioned at the 12-point position, the collecting groove (413) is suitable for collecting water drops dropping from the crystals;
when the collecting groove (413) rotates to the 2-point position, the air passage (414) is communicated and blows air outwards through the collecting groove (413).
6. The cleaning device for cleaning the indium phosphide crystal with low pollution as claimed in claim 5,
the delay mechanism (42) includes: the rotary table comprises a rotary table (421), a rotary shaft (422), linkage teeth (423) and a plurality of tooth columns (424), wherein the rotary table (421) is circular, and the rotary table (421) is vertically arranged;
the rotating shaft (422) is vertically fixed at the circle center of the rotating disc (421), and the other end of the rotating shaft (422) is fixed at the rotating center of the material shaking rod (411);
the tooth columns (424) are vertically fixed on one side wall of the rotating disc (421) far away from the rotating shaft (422), and the tooth columns (424) are arranged in an annular mode along the axial direction of the rotating disc (421);
the linkage teeth (423) are vertically fixed on one side wall of the rotating disc (421) far away from the tooth columns (424), and the linkage teeth (423) are arranged between any two tooth columns (424);
a driving motor (425) is fixed below the outermost rotary table (421), and a driving wheel matched with the tooth column (424) is fixed on a conveying shaft of the driving motor (425); wherein
When the driving wheel rotates circumferentially to drive the outermost rotary disc (421) to rotate for one circle, the linkage teeth (423) on the inner wall of the outermost rotary disc (421) are abutted against the tooth columns (424) of the middle rotary disc (421) to push the middle rotary disc (421) to rotate for one station;
when the middle rotating disc (421) rotates for a circle, the linkage teeth (423) on the inner wall of the middle rotating disc (421) are abutted against the tooth columns (424) of the last rotating disc (421) so as to drive the last rotating disc (421) to rotate for one station.
7. The cleaning device for cleaning the indium phosphide crystal with low pollution as claimed in claim 6,
the material pouring part (5) comprises: the material shaking device comprises supporting columns (51), a linkage rod (52), accommodating blocks (53) and a linkage block (54), wherein the accommodating blocks (53) are rectangular, a placing groove (55) is formed in one side, close to the material shaking rod (411), of each accommodating block (53), and the placing groove (55) is formed in the width direction of each accommodating block (53);
the supporting columns (51) are fixed at two ends of the accommodating blocks (53);
the linkage rod (52) is fixed at one end, close to the rotating disc (421), of the accommodating block (53), the linkage block (54) is L-shaped, and the linkage block (54) is fixed at the end part of the linkage rod (52); wherein
When the linkage teeth (423) of the last turntable (421) shaft abut against the linkage blocks (54), the linkage teeth (423) push the linkage blocks (54) to slide downwards in an arc shape, so that the accommodating blocks (53) are driven by the linkage rods (52) to synchronously rotate downwards in an arc shape by taking the supporting columns (51) as the shafts, and the end parts of the wafers are driven to tilt.
8. The cleaning device for cleaning the indium phosphide crystal with low pollution as claimed in claim 7,
the ultrasonic cleaning unit (1) comprises: the device comprises a cleaning pool (11), a cleaning basket (12), a circulating pump (13), a filter (14) and a plurality of ultrasonic generators (15), wherein the cleaning pool (11) is rectangular, and the interior of the cleaning pool (11) is hollow; a water inlet is formed in one side wall of the cleaning pool (11), and a plurality of zigzag overflow ports are formed in the other side wall of the cleaning pool (11);
the circulating pump (13) is communicated with a water outlet of the overflow port through a water pipe, the filter (14) is communicated with the circulating pump (13) through a water pipe, and the water inlet is communicated with the filter (14) through a water pipe;
the ultrasonic generator (15) is fixed on two side walls and an inner bottom wall of the cleaning pool (11), and the ultrasonic generator (15) is suitable for cleaning the wafer through cleaning liquid in the cleaning pool (11);
the cleaning basket (12) is wrapped by a grid bottom plate (121) and a handle (122), the grid bottom plate (121) is suitable for containing crystal workpieces, the handle (122) is parallel to the grid bottom plate (121), the handle (122) is fixed above the grid bottom plate (121) through a fixing column, and the length of the handle (122) is larger than that of the cleaning pool (11); wherein
After the wafer is placed in the cleaning basket (12) and placed in the cleaning pool (11), the ultrasonic generator (15) works to clean the wafer;
the floating objects on the liquid surface of the cleaning pool (11) flow to the filter (14) through the overflow port, and the cleaning liquid is injected into the cleaning pool (11) again after being filtered by the filter (14).
9. The cleaning device for cleaning the indium phosphide crystal with low pollution as claimed in claim 8,
the bubbling unit (2) includes: the device comprises a bubbling tank (21), a bubbling fan (22), a bubbling pipe (23) and a heating pipe (24), wherein the bubbling tank (21) is rectangular, the bubbling tank (21) is hollow, the heating pipe (24) is fixed on one side of the bubbling tank (21), and the heating pipe (24) is suitable for heating liquid in the bubbling tank (21);
the bubbling fan (22) is fixed below the bubbling tank (21), the bubbling pipe (23) is fixed on the inner bottom wall of the bubbling tank (21), the bubbling pipe (23) is linked with the bubbling fan (22), and a plurality of air outlets are formed in the bubbling pipe (23); wherein
After the cleaning basket (12) is placed in the bubbling tank (21), the bubbling pipe (23) continuously blows air into the bubbling tank (21) to clean the wafer again.
10. A cleaning process of a cleaning device for cleaning an indium phosphide crystal with low pollution, which is characterized by comprising the cleaning device for cleaning an indium phosphide crystal with low pollution as claimed in claim 9,
after the wafer is placed on the cleaning basket (12), the cleaning basket (12) is placed in the cleaning pool (11), at the moment, the ultrasonic generator (15) starts to work, and the ultrasonic generator (15) cleans crystals through liquid in the cleaning pool (11);
after ultrasonic cleaning is finished, pulling a handle (122) and moving a cleaning basket (12) from a cleaning pool (11) into a bubbling pool (21), continuously blowing air to the bubbling pool (21) through a bubbling pipe (23), and simultaneously heating liquid in the bubbling pool (21) through a heating pipe (24) so as to further clean crystals;
after the cleaning is finished, the crystal is placed above the material shaking part (4) to drain the cleaning liquid on the crystal; one end of the crystal is inserted into the placing groove (55), the crystal is horizontally placed on the material shaking rod (411), the driving motor (425) drives the driving wheel to rotate circumferentially, the driving wheel drives the outermost rotary disc (421) to rotate axially, the rotary disc (421) drives the material shaking rod (411) to rotate axially through the rotating shaft (422), and the material shaking rod (411) can make the wafer contact with each rectangular surface of the material shaking rod (411) in sequence through the axial rotation to shake the crystal; when the material shaking angles (412) fixed at the edges and corners of the material shaking rod (411) rotate along with the arc of the material shaking rod (411), at least one material shaking angle (412) is abutted against the bottom surface of the crystal and scrapes water stains on the crystal towards the direction of the accommodating block (53); meanwhile, when the collecting groove (413) on the material shaking rod (411) rotates from the 12-point position to the 2-point position, the air channel (414) is communicated and blows air to the lower bottom surface of the crystal through the collecting groove (413) to accelerate the draining effect.
CN202210098931.4A 2022-01-27 2022-01-27 Cleaning device and cleaning process for cleaning indium phosphide crystals with low pollution Active CN114101210B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210098931.4A CN114101210B (en) 2022-01-27 2022-01-27 Cleaning device and cleaning process for cleaning indium phosphide crystals with low pollution

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210098931.4A CN114101210B (en) 2022-01-27 2022-01-27 Cleaning device and cleaning process for cleaning indium phosphide crystals with low pollution

Publications (2)

Publication Number Publication Date
CN114101210A CN114101210A (en) 2022-03-01
CN114101210B true CN114101210B (en) 2022-04-08

Family

ID=80361481

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210098931.4A Active CN114101210B (en) 2022-01-27 2022-01-27 Cleaning device and cleaning process for cleaning indium phosphide crystals with low pollution

Country Status (1)

Country Link
CN (1) CN114101210B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114806747A (en) * 2022-04-28 2022-07-29 安徽富乐德科技发展股份有限公司 Wafer cleaning water and method for cleaning wafer

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN206104503U (en) * 2016-09-21 2017-04-19 深圳市阳光晶玻科技有限公司 Liftable glass cleaning machine
WO2018230457A1 (en) * 2017-06-13 2018-12-20 シャープ株式会社 Substrate processing device
CN208527501U (en) * 2018-07-13 2019-02-22 昆山通莱五金机械有限公司 A kind of full-automatic oil injector body cleaning machine
CN211679048U (en) * 2019-12-22 2020-10-16 上海新阳半导体材料股份有限公司 Hanging basket shaking device for wafer cleaning in wafer wet processing equipment
CN115241103A (en) * 2020-05-06 2022-10-25 杭州众硅电子科技有限公司 Wafer transmission device, transmission method and CMP equipment cleaning module
CN212284969U (en) * 2020-09-16 2021-01-05 马鞍山荣泰科技有限公司 Cleaning and collecting device for quartz wafer processing
CN214441508U (en) * 2020-12-25 2021-10-22 苏州艾特隆精密科技有限公司 Material shaking and cleaning integrated machine and material shaking device

Also Published As

Publication number Publication date
CN114101210A (en) 2022-03-01

Similar Documents

Publication Publication Date Title
US5593505A (en) Method for cleaning semiconductor wafers with sonic energy and passing through a gas-liquid-interface
EP0526245B1 (en) An automatic cleaning apparatus for wafers
JP3131149B2 (en) Flow liquid scrubber cleaning method and apparatus
CN114101210B (en) Cleaning device and cleaning process for cleaning indium phosphide crystals with low pollution
CN114653662B (en) Indium phosphide cleaning system with high cleaning efficiency
CN1163947C (en) Processor, method and robot device therefor
JPH07111963B2 (en) Substrate cleaning / drying device
CN113113346A (en) Bearing device and semiconductor cleaning equipment
JPH1190359A (en) Overflow type scrub washing and apparatus therefor
KR200224979Y1 (en) Cleaning appratus of basket filter
CN117102184A (en) Laboratory chemistry household utensils disinfection cleaning equipment
CN204353129U (en) A kind of linear nozzle cleaning device
CN207752980U (en) Wafer cleaning device
JP4095478B2 (en) Substrate etching apparatus and etching method
CN215403754U (en) Sludge discharge device for sewage treatment
CN114613696A (en) Indium phosphide cleaning device with high automation degree
JPH09167747A (en) Substrate treatment device
JPH09314019A (en) Method and device for surface treating
JP2006080563A (en) Development method and development apparatus
JP2005066402A (en) Blade cleaning device
KR20060076227A (en) Processing apparatus and processing method
CN219851037U (en) Cleaning device for stone plate
KR100738443B1 (en) Substrate cleaning apparatus and substrate cleaning method
CN216584283U (en) Coating sewage treatment equipment
CN220899628U (en) Filter surface layer purging device

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20220422

Address after: 215000 room 101-1, building 5, No. 900 Zhujiang Road, high tech Zone, Suzhou, Jiangsu

Patentee after: Suzhou Zhongdi semiconductor material Co.,Ltd.

Address before: 213000 No.9 Zhuxiang Road, Wujin economic development zone, Changzhou City, Jiangsu Province

Patentee before: Changzhou Dejiang CNC Technology Co.,Ltd.