CN114653662B - Indium phosphide cleaning system with high cleaning efficiency - Google Patents
Indium phosphide cleaning system with high cleaning efficiency Download PDFInfo
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- CN114653662B CN114653662B CN202210117536.6A CN202210117536A CN114653662B CN 114653662 B CN114653662 B CN 114653662B CN 202210117536 A CN202210117536 A CN 202210117536A CN 114653662 B CN114653662 B CN 114653662B
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- shaking
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- 238000004140 cleaning Methods 0.000 title claims abstract description 203
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 title claims abstract description 18
- 238000011086 high cleaning Methods 0.000 title claims abstract description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 21
- 235000012431 wafers Nutrition 0.000 claims description 186
- 239000000463 material Substances 0.000 claims description 91
- 230000007246 mechanism Effects 0.000 claims description 67
- 238000000034 method Methods 0.000 claims description 15
- 230000000712 assembly Effects 0.000 claims description 12
- 238000000429 assembly Methods 0.000 claims description 12
- 230000005540 biological transmission Effects 0.000 claims description 11
- 238000001035 drying Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 18
- 230000004308 accommodation Effects 0.000 description 7
- 239000007788 liquid Substances 0.000 description 6
- 230000033001 locomotion Effects 0.000 description 6
- 238000007664 blowing Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005202 decontamination Methods 0.000 description 1
- 230000003588 decontaminative effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B1/00—Cleaning by methods involving the use of tools
- B08B1/10—Cleaning by methods involving the use of tools characterised by the type of cleaning tool
- B08B1/12—Brushes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B1/00—Cleaning by methods involving the use of tools
- B08B1/30—Cleaning by methods involving the use of tools by movement of cleaning members over a surface
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B1/00—Cleaning by methods involving the use of tools
- B08B1/30—Cleaning by methods involving the use of tools by movement of cleaning members over a surface
- B08B1/32—Cleaning by methods involving the use of tools by movement of cleaning members over a surface using rotary cleaning members
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention relates to the technical field of wafer cleaning, in particular to a cleaning system for indium phosphide with high cleaning efficiency. The invention relates to a cleaning system of indium phosphide with high cleaning efficiency, which comprises: the feeding part is arranged at the upper end of the cleaning tank in a lifting manner and is suitable for clamping a wafer to clean the surface; the cleaning part is rotatably arranged in the cleaning pool and can be rubbed with the outer wall of the wafer to clean the wafer; the draining part is fixed on one side of the bracket and is suitable for draining the wafer; wherein the feeding part drives the wafer to be immersed in the cleaning solution until the wafer contacts with the cleaning part, and then the cleaning part is rotated to frictionally clean the wafer; after the cleaning is finished, the wafer is conveyed to a draining part, and the draining part can scrape off water stains at the bottom of the wafer. Through setting up the clearance portion in wasing the pond, clear up the wafer surface in step when wasing the wafer, after the wafer clearance is accomplished, the drying rate of water stain on the wafer can be accelerated to the draining portion, has improved production efficiency.
Description
Technical Field
The invention relates to the technical field of wafer cleaning, in particular to a cleaning system for indium phosphide with high cleaning efficiency.
Background
Indium phosphide wafers are important compound semiconductor materials, and compared with gallium arsenide, the indium phosphide wafers are mainly characterized by high saturated electric field drift velocity, good thermal conductivity, strong radiation resistance and the like, and are preferred substrate materials in the field of fiber communication which is rapidly developed at present.
The polishing and decontamination of the wafer surface is no longer a final requirement in the prior art, and the removal of metal, organic matter and oxide layers on the wafer surface is also important, in the prior art, the wafer is put into different cleaning solutions for multiple cleaning, and particles and metal residues on the wafer surface can be removed, but the operation is complex and the production cost is high.
In order to solve the above technical problems, there is a need to develop a cleaning system for indium phosphide with high cleaning efficiency.
Disclosure of Invention
The invention aims to provide a cleaning system for indium phosphide, which has high cleaning efficiency.
In order to solve the above technical problems, the present invention provides a cleaning system for indium phosphide with high cleaning efficiency, comprising:
the device comprises a bracket, a cleaning tank, a feeding part, a cleaning part and a draining part, wherein the cleaning tank is fixed at the upper end of the bracket, and cleaning solution is filled in the cleaning tank;
the feeding part is arranged at the upper end of the cleaning tank in a lifting manner and is suitable for clamping a wafer to clean the surface;
the cleaning part is rotatably arranged in the cleaning pool and can be rubbed with the outer wall of the wafer to clean the wafer;
the draining part is fixed on one side of the bracket and is suitable for draining the wafer; wherein the method comprises the steps of
The feeding part drives the wafer to be immersed in the cleaning solution until the wafer contacts with the cleaning part, and then the cleaning part is rotated to frictionally clean the wafer;
after the cleaning is finished, the wafer is carried to a draining part, and the draining part can scrape off water stains at the bottom of the wafer.
Preferably, the cleaning section includes: the cleaning device comprises a driving motor, a driven shaft, a transmission belt, two sliding assemblies and a plurality of cleaning assemblies, wherein the driving motor is fixed on the bracket and is arranged below the cleaning pool;
the driven shaft is rotatably arranged on one side of the driving motor in parallel, two ends of the driven shaft protrude out of two side walls of the cleaning pool, and the driven shaft is in transmission connection with the driving motor;
the cleaning components are rotatably arranged in the cleaning tank, the outer ends of the cleaning components protrude out of the side wall of the cleaning tank, and two adjacent cleaning components are meshed with each other; the cleaning assembly at the outer side closest to the driven shaft is in transmission connection with the driven shaft through a transmission belt;
the two sliding assemblies are symmetrically arranged on the inner wall of the cleaning pool, and the sliding assemblies are linked with the cleaning assemblies; wherein the method comprises the steps of
The driving motor drives the cleaning assembly to axially rotate so as to enable the cleaning assembly to rub the surface of the wafer to clean the wafer;
the sliding component can drive the cleaning component to slide horizontally, so that the cleaning component slides from one end of the wafer to the other end while rotating axially.
Preferably, the cleaning assembly includes: the cleaning device comprises rotating teeth, a positioning column, a telescopic column and a brush head, wherein the rotating teeth are fixed at the end part of the positioning column, and the rotating teeth are arranged on the cleaning Chi Waibi; adjacent two rotating teeth are meshed with each other;
the positioning column is hollow, and the telescopic column is slidably arranged in the positioning column;
the hair brush head is fixed at the end part of the telescopic column far away from the positioning column, and the hair brush head is suitable for rubbing a wafer; wherein the method comprises the steps of
The rotating teeth can drive the brush heads to axially rotate when axially rotating so as to rub the wafers.
Preferably, the outer wall of the telescopic column is fixed with a plurality of limiting strips along the axial direction, and the inner wall of the positioning column is provided with a plurality of limiting grooves matched with the limiting strips.
Preferably, the bristle comprises: the fixing column and a plurality of brush hair, a plurality of brush hair annular are fixed the fixed column outer wall, just the brush hair annular sets up into multilayer structure.
Preferably, the sliding assembly includes: the cleaning device comprises a fixed plate, a sliding plate and two first linear moving pairs, wherein the two first linear moving pairs are fixed on the inner side wall of the cleaning tank, and the first linear moving pairs are consistent with the length direction of the telescopic column;
the two ends of the fixing plate are vertically fixed on the inner side wall of the cleaning tank, and the fixing plate is mutually vertical to the telescopic column; the fixed plate is provided with a plurality of through holes matched with Mao Shutou;
the two ends of the sliding plate are respectively fixed at the movable ends of the two first linear moving pairs, a plurality of limiting holes matched with the telescopic columns are formed in the sliding plate, a locking bearing is fixed in each limiting hole, an inner ring of each locking bearing is fixed on the outer wall of each telescopic column, and an outer ring of each locking bearing is fixed on the inner wall of each limiting hole; wherein the method comprises the steps of
When the sliding plate is driven by the first linear moving pair to slide horizontally, the sliding plate drives the telescopic column to slide horizontally through the locking bearing;
when the rotating teeth drive the positioning columns to axially rotate, the telescopic columns drive the brush heads to axially rotate.
Preferably, each through hole is internally provided with a shrinkage column, the shrinkage column is in an hourglass shape, and when the fixing column drives the bristles to pass through the shrinkage column, the bristles are extruded and deformed by the inner wall of the shrinkage column so as to eject residues adhered to the outer wall of the bristles.
Preferably, the feeding portion includes: the cleaning device comprises a lifting plate, a fixing frame, a placing plate, a conveying belt, two feeding cylinders and two second linear moving pairs, wherein the fixing frame is fixed above the cleaning pool, the two feeding cylinders are fixed at the upper end of the fixing frame, the lifting plate is arranged below the fixing frame in a lifting manner, and the lifting plate is fixed at the end part of the movable end of the feeding cylinder;
the placing plate is fixed on the lifting plate, the placing plate is rectangular, and the upper end of the placing plate is wavy;
the conveying belt is arranged on one side of the fixing frame and is suitable for conveying wafers;
the two second linear moving pairs are fixed on two sides of the fixed frame, and are parallel to each other,
a cross beam is fixed between the sliding ends of the two second linear moving pairs; wherein the method comprises the steps of
After the wafer is placed on the placing plate, the feeding cylinder drives the lifting plate to move downwards so as to enable the wafer to be immersed into the cleaning solution;
the brush head horizontally slides to the upper part of the wafer, and the brush hair axially rotates to rub the outer wall of the wafer;
after the cleaning is finished, the second linear moving pair drives the cross beam to horizontally slide so as to push the wafer onto the conveying belt from the placing plate.
Preferably, the draining part includes: the device comprises a draining pond, a pouring assembly, a plurality of material shaking mechanisms and a plurality of delay mechanisms, wherein the material shaking mechanisms are all arranged above the draining pond, each material shaking mechanism is suitable for supporting a wafer, the delay mechanisms are rotatably arranged on the side wall of the draining pond, one delay mechanism corresponds to one material shaking mechanism, and each delay mechanism sequentially rotates to drive each material shaking mechanism to sequentially rotate;
the material pouring assembly is arranged at the position of the material shaking mechanism of the last shaking wafer and is linked with the last delay mechanism; wherein the method comprises the steps of
After the wafer is horizontally placed on each shaking mechanism, each shaking mechanism rotates in sequence to shake the wafer thereon and scrape off water stains at the bottom of the wafer;
and when the last time delay mechanism rotates for one circle, the material pouring assembly is driven to rotate so as to tilt the wafer.
Preferably, the shaking mechanism comprises: the material shaking rods are rectangular and can be rotatably arranged above the water draining pool;
the material shaking angles are arranged along the length direction of the material shaking rod, and one material shaking angle is correspondingly fixed at one edge angle of the material shaking rod; wherein the method comprises the steps of
When the delay mechanism drives the shaking rod to axially rotate, the shaking angle initially abuts against the bottom wall of the wafer and pushes the end part of the wafer to tilt upwards;
when the material shaking angle is separated from the bottom wall of the wafer, the material shaking angle can scrape the water stain on the bottom surface of the wafer to the direction of the last material shaking rod.
The indium phosphide cleaning system has the beneficial effects that the indium phosphide cleaning system with high cleaning efficiency can achieve the effect of cleaning the wafer through the cooperation of the feeding part and the cleaning part, the wafer is immersed into the cleaning solution in the cleaning tank through the feeding part, the brush head is driven to axially rotate to clean the surface of the wafer, and meanwhile, the brush head is driven by the sliding component to move from one end of the wafer to the other end of the wafer, so that the cleaning effect of the brush head on the wafer is further enhanced; after the cleaning is finished, the wafer is placed on the shaking rod, the shaking rod rotates sequentially to shake the wafer on the shaking rod, water stains at the bottom of the wafer are scraped by propping the shaking angle against the lower bottom surface of the wafer, and when the last delay mechanism rotates for one circle, the material pouring mechanism is driven to rotate so as to lift the wafer, the dried wafer is conveniently clamped, and the working efficiency is improved.
Drawings
The invention will be further described with reference to the drawings and examples.
FIG. 1 is a perspective view of a preferred embodiment of an indium phosphide cleaning system of the present invention having high cleaning efficiency;
FIG. 2 is a perspective view of a wash basin of the present invention;
FIG. 3 is a perspective view of a cleaning section of the present invention;
FIG. 4 is a perspective view of a cleaning assembly of the present invention;
FIG. 5 is a perspective view of a constrictor column of the present invention;
FIG. 6 is a front view of the shake-out mechanism of the present invention;
FIG. 7 is a perspective view of the delay mechanism of the present invention;
fig. 8 is a perspective view of the pouring assembly of the present invention.
In the figure:
1. a bracket; 2. a cleaning pool;
3. a feeding part; 31. a lifting plate; 32. a fixing frame; 33. placing a plate; 34. a conveyor belt; 35. a feeding cylinder; 36. a second linear motion pair;
4. a cleaning part; 41. a driving motor; 42. a driven shaft; 43. a drive belt; 44. a sliding assembly;
441. a fixing plate; 442. a sliding plate; 443. a first linear motion pair; 444. locking a bearing; 445. a shrink column;
45. cleaning the assembly; 451. rotating the teeth; 452. positioning columns; 453. a telescopic column; 4530. a limit bar; 454. a brush head; 455. fixing the column; 456. brushing;
5. a draining part; 51. a draining pool;
52. a pouring assembly; 521. a support column; 522. a linkage rod; 523. a receiving block; 524. a linkage block;
53. a shaking mechanism; 531. a shaking rod; 532. shaking the material angle; 533. a collection tank; 534. an air passage;
54. a time delay mechanism; 541. a turntable; 542. a rotating shaft; 543. linkage teeth; 544. tooth columns; 545. a time delay motor.
Detailed Description
The invention will now be described in further detail with reference to the accompanying drawings. The drawings are simplified schematic representations which merely illustrate the basic structure of the invention and therefore show only the structures which are relevant to the invention.
As shown in fig. 1 to 8, the present invention provides a cleaning system for indium phosphide with high cleaning efficiency, comprising: the cleaning device comprises a bracket 1, a cleaning pool 2, a feeding part 3, a cleaning part 4 and a draining part 5, wherein the cleaning pool 2 is fixed at the upper end of the bracket 1, and cleaning solution is filled in the cleaning pool 2; the support 1 is in a frame structure, and the support 1 is used as a main support of the cleaning tank 2; the feeding part 3 is arranged at the upper end of the cleaning tank 2 in a lifting manner, and the feeding part 3 is suitable for clamping a wafer to clean the surface; the feeding part 3 is arranged to conveniently immerse the workpiece in the cleaning solution; the cleaning part 4 is rotatably arranged in the cleaning tank 2, and the cleaning part 4 can rub the outer wall of the wafer to clean the wafer; after the workpiece is placed into the cleaning tank 2, the cleaning part 4 can clean the surface of the wafer through horizontal movement, and the cleaning part 4 can clean the surface of the wafer through axial rotation, so that the cleaning efficiency of the wafer is greatly improved. The draining part 5 is fixed on one side of the bracket 1, and the draining part 5 is suitable for draining wafers; wherein the feeding part 3 drives the wafer to be immersed in the cleaning solution until the wafer contacts with the cleaning part 4, and then the cleaning part 4 is rotated to frictionally clean the wafer; after the cleaning is finished, the wafer is conveyed to a draining part 5, and the draining part 5 can scrape off water stains at the bottom of the wafer. Through the matching of the feeding part 3 and the cleaning part 4, the effect of immersing the wafer in the cleaning solution of the cleaning tank 2 and rubbing the surface of the wafer to improve the cleaning effect of the wafer is achieved; and the setting of the draining part 5 accelerates the draining effect of the wafer after the wafer cleaning is finished, thereby improving the working efficiency.
Optionally, the cleaning part 4 includes: the cleaning device comprises a driving motor 41, a driven shaft 42, a transmission belt 43, two sliding assemblies 44 and a plurality of cleaning assemblies 45, wherein the driving motor 41 is fixed on the bracket 1, and the driving motor 41 is arranged below the cleaning tank 2; the driving motor 41 is used as a main power source of the cleaning part 4 and provides power for the axial rotation of each cleaning assembly 45; the driven shaft 42 is rotatably arranged on one side of the driving motor 41 in parallel, two ends of the driven shaft 42 protrude out of two side walls of the cleaning tank 2, and the driven shaft 42 is in transmission connection with the driving motor 41; the driven shaft 42 is in transmission connection with a conveying shaft of the driving motor 41 through a driven wheel, the driving motor 41 drives the driven shaft 42 to axially rotate, and the driven shaft 42 synchronously drives each cleaning assembly 45 to axially rotate so as to clean the surface of a wafer; the cleaning components 45 are rotatably arranged in the cleaning tank 2, the outer ends of the cleaning components 45 protrude out of the side wall of the cleaning tank 2, and two adjacent cleaning components 45 are meshed with each other; a cleaning assembly 45, which is positioned at the outer side closest to the driven shaft 42, is in driving connection with the driven shaft 42 through a driving belt 43; the two sliding components 44 are symmetrically arranged on the inner wall of the cleaning tank 2, and the sliding components 44 are linked with the cleaning components 45; the sliding assembly 44 can drive the cleaning assembly 45 to slide horizontally so that the end of the cleaning assembly 45 contacts and rubs with the wafer and the cleaning assembly 45 slides from one end of the wafer to the other; the driving motor 41 drives the cleaning assembly 45 to axially rotate through the driven shaft 42 so that the end part of the cleaning assembly 45 rubs with the surface of the wafer to clean the wafer; when the cleaning assembly 45 axially rotates to rub the wafer, the sliding assembly 44 can drive the cleaning assembly 45 to horizontally slide, so that the cleaning assembly 45 axially rotates and simultaneously slides from one end of the wafer to the other end, compared with a cleaning mode that the cleaning assembly 45 independently keeps axially rotating, the sliding assembly 44 drives the cleaning assembly 45 axially rotating and simultaneously horizontally slides, the contact area of the cleaning assembly 45 and a workpiece is increased, the cleaning effect of the cleaning assembly 45 is improved, and the working efficiency is improved.
Optionally, the cleaning assembly 45 includes: the cleaning device comprises rotating teeth 451, a positioning column 452, a telescopic column 453 and a brush head 454, wherein the rotating teeth 451 are fixed at the end part of the positioning column 452, and the rotating teeth 451 are arranged on the outer wall of the cleaning tank 2; adjacent two rotating teeth 451 are engaged with each other; when the driven shaft 42 drives one rotating tooth 451 to axially rotate through a belt, the rotating tooth 451 drives other rotating teeth 451 meshed with the rotating tooth 451 to axially rotate, so that each bristle 454 is driven to synchronously axially rotate, and the bristle 454 can clean the surface of a workpiece; one end of the positioning column 452 is vertically fixed on the inner side wall of the rotating tooth 451, the positioning column 452 is concentric with the center of the rotating tooth 451, the inside of the positioning column 452 is hollow, and the telescopic column 453 is slidably arranged in the positioning column 452; the telescopic column 453 can axially slide along the positioning column 452 in a telescopic manner, and meanwhile, the telescopic column 453 can be driven to axially rotate synchronously when the positioning column 452 axially rotates. The bristles 454 are fixed at the end of the telescopic column 453 remote from the positioning column 452, the bristles 454 are suitable for rubbing against a wafer; the rotating teeth 451 are capable of driving said bristles 454 to rotate axially when rotated axially to rub against the wafer. When the telescopic column 453 axially stretches and moves along the positioning column 452, the brush head 454 can be driven to move from one end of the wafer to the other end, so that the contact area between the brush head 454 and the wafer is increased, and the effect of cleaning the wafer by the brush head 454 is improved. In order to improve the stability of the axial movement of the telescopic column 453 along the positioning column 452, a plurality of limiting strips 4530 are fixed on the outer wall of the telescopic column 453 along the axial direction, and the limiting strips 4530 are equidistantly arranged around the outer wall of the telescopic column 453; a plurality of limit grooves matched with the limit strips 4530 are formed in the inner wall of the positioning column 452. When the telescopic column 453 slides horizontally along the axial direction of the positioning column 452, the sliding stability of the telescopic column 453 can be guaranteed through the design of the limiting groove and the limiting bar 4530, and meanwhile, when the positioning column 452 drives the telescopic column 453 to axially rotate, the matching of the limiting bar 4530 and the limiting groove can enable the positioning column 452 to drive the telescopic column 453 to axially rotate.
To enhance the cleaning effect on the wafer surface, the bristles 454 include: the brush hair 456 is made of flexible materials, and when the brush hair 456 is driven by the fixed column 455 to axially rotate, the brush hair 456 can be abutted against the wafer to rub against the surface of the wafer; the fixing post 455 is detachably fixed at the end of the telescopic post 453, the bristles 456 are made of a fragile material, and when the bristles 456 rub against the surface of the wafer for many times, the bristles 456 need to be replaced to ensure the cleaning effect on the wafer, so that the fixing post 455 is detachably arranged to facilitate later replacement of the bristles 456; a plurality of bristles 456 are annularly fixed on the outer wall of the fixed column 455, and the bristles 456 are annularly arranged in a multi-layer structure. The bristles 456 are arranged to surround the outer wall of the fixing post 455 in multiple layers, so that the contact area between the bristles 456 and the wafer can be increased at the same time, and when the fixing post 455 drives the bristles 456 to axially rotate, the cleaning effect of the wafer can be improved by the bristles 456 in multiple layers.
Preferably, the sliding assembly 44 includes: the fixed plate 441, the sliding plate 442 and two first linear moving pairs 443, wherein the two first linear moving pairs 443 are fixed on the inner side wall of the cleaning tank 2, and the first linear moving pairs 443 are consistent with the length direction of the telescopic column 453; the two ends of the fixing plate 441 are vertically fixed on the inner side wall of the cleaning tank 2, and the fixing plate 441 and the telescopic column 453 are mutually vertical; the fixed plate 441 is provided with a plurality of through holes which are matched with Mao Shutou; the brush heads 454 can pass through the through holes, and each bristle 456 is extruded by the through holes when passing through the through holes and bends towards the direction of the fixed column 455, and after the bristle 456 passes through the through holes, each bristle 456 recovers to the initial state, and the bristle 456 ejects the residues adhered to the surface of the wafer outside the bristle 456 through complete and shrinkage, so that the cleanliness of the bristle 456 is ensured, and the cleaning effect on the wafer can be improved; two ends of the sliding plate 442 are respectively fixed at the movable ends of the two first linear moving pairs 443, a plurality of limiting holes matched with the telescopic columns 453 are formed in the sliding plate 442, a locking bearing 444 is fixed in each limiting hole, an inner ring of the locking bearing 444 is fixed on the outer wall of each telescopic column 453, and an outer ring of the locking bearing 444 is fixed on the inner wall of each limiting hole; when the first linear moving pair 443 drives the sliding plate 442 to slide horizontally, the sliding plate 442 drives the telescopic column 453 to slide horizontally through the locking bearing 444; when the first linear moving pair 443 horizontally slides from the side close to the rotating teeth 451 to the side of the fixed plate 441, the first linear moving pair 443 drives the sliding plate 442 to horizontally slide to drive the telescopic column 453 to horizontally slide synchronously, so that the bristles 456 pass through the through holes and are positioned below the feeding portion 3; when the rotating teeth 451 drive the positioning posts 452 to axially rotate, the telescopic posts 453 drive the bristles 454 to axially rotate.
Optionally, a shrinkage post 445 is disposed in each through hole, and when the shrinkage post 445 is in an hourglass shape and the fixing post 455 drives the bristles 456 to pass through the shrinkage post 445, the bristles 456 are deformed by the inner wall of the shrinkage post 445 to eject residues adhered to the outer wall of the bristles 456. The interior of the shrinkage post 445 is arranged in an hourglass shape, when the fixing post 455 drives the bristles 456 to pass through the narrowest point in the shrinkage post 445, the bristles 456 shrink to be in a furled state, and the two open ends of the shrinkage post 445 are suitable for furling deformation of the bristles 456.
Optionally, the feeding portion 3 includes: the cleaning device comprises a lifting plate 31, a fixing frame 32, a placing plate 33, a conveying belt 34, two feeding air cylinders 35 and two second linear moving pairs 36, wherein the fixing frame 32 is fixed above the cleaning tank 2, the two feeding air cylinders 35 are fixed at the upper end of the fixing frame 32, the lifting plate 31 is arranged below the fixing frame 32 in a lifting manner, and the lifting plate 31 is fixed at the end part of the movable end of the feeding air cylinder 35; the placing plate 33 is fixed on the lifting plate 31, the placing plate 33 is rectangular, and the upper end of the placing plate 33 is wavy; the placing plate 33 is suitable for placing a wafer, and when the lifting plate 31 descends downwards, the placing plate 33, together with the wafer, can be soaked in the cleaning solution, and at this time, the first moving pair drives the telescopic column 453 to move towards the fixed plate 441 through the sliding bar, so that the bristles 456 are positioned above the wafer; the driving motor 41 drives the fixed column 455 to axially rotate so that the bristles 456 clean the wafer; the conveying belt 34 is arranged at one side of the fixed frame 32, and the conveying belt 34 is suitable for conveying wafers; the two second linear moving pairs 36 are fixed on two sides of the fixed frame 32, the second linear moving pairs 36 are parallel to the first linear moving pairs 443, and a cross beam is fixed between the sliding ends of the two second linear moving pairs 36; wherein after the wafer is placed on the placing plate 33, the loading cylinder 35 drives the lifting plate 31 to move downward so that the wafer is immersed in the cleaning solution; the bristles 454 slide horizontally over the wafer, rotating the bristles 456 axially to rub against the outer wall of the wafer; after the cleaning is finished, the second linear motion pair 36 drives the cross beam to slide horizontally to push the wafer from the placing plate 33 onto the conveyor belt 34. In operation, the wafer is placed on the placing plate 33, the lifting plate 31 is driven by the feeding cylinder 35 to move downwards so as to submerge the wafer in the cleaning solution, the sliding plate 442 is driven by the first linear moving pair 443 to move horizontally towards the direction of the fixed plate 441, so that the fixed posts 455 drive the bristles 456 to pass through the shrinkage posts 445 and be positioned above the workpiece, the fixed posts 455 are driven by the driving motor 41 through the rotating teeth 451 to rotate axially, so that the bristles 456 rub against the surface of the wafer to achieve the effect of cleaning the wafer, and when the sliding plate 442 is driven by the first linear moving pair 443 to move away from the fixed plate 441, the bristles 456 move horizontally from one end to the other end of the workpiece, and the bristles 456 can slide horizontally while rotating axially, so that the cleaning effect on the wafer can be improved; after the cleaning is finished, the lifting plate 31 is driven to move upwards by the feeding cylinder 35, the cross beam is driven to slide horizontally by the second linear moving pair 36, the wafer is pushed to fall onto the conveying belt 34, and the wafer is conveyed to the draining part 5 by the conveying belt 34; while the first linear motion pair 443 drives the bristles 456 through the shrink posts 445, the bristles 456 shrink in the direction of the fixed posts 455, thereby shaking off wafer residues adhering to the ends of the bristles 456.
Optionally, the draining part 5 includes: a draining tank 51, a pouring assembly 52, a plurality of shaking mechanisms 53 and a plurality of delay mechanisms 54, wherein the draining tank 51 is fixed on one side of the cleaning tank 2, and the draining tank 51 is suitable for collecting cleaning solution dripped on a wafer; the plurality of shaking mechanisms 53 are all arranged above the draining pond 51, each shaking mechanism 53 is suitable for supporting a wafer, the number of shaking mechanisms 53 is three, the plurality of delay mechanisms 54 are rotatably arranged on the side wall of the draining pond 51, one delay mechanism 54 corresponds to one shaking mechanism 53, and each delay mechanism 54 sequentially rotates to drive each shaking mechanism 53 to sequentially rotate; the material pouring assembly 52 is arranged at a position close to a material shaking mechanism 53 of the last shaking wafer, and the material pouring assembly 52 is linked with a last delay mechanism 54; after the wafer is horizontally placed on each shaking mechanism 53, each shaking mechanism 53 rotates in sequence to shake the wafer thereon and scrape off water stains at the bottom of the wafer; when the last delay mechanism 54 rotates one circle, the circular arc rotation of the pouring assembly 52 is driven to tilt the wafer. When the wafer is in operation, the wafer is horizontally placed at the upper ends of the three material shaking mechanisms 53, one end of the wafer is inserted into the material pouring assembly 52, when the outermost time delay mechanism 54 axially rotates, the corresponding material shaking mechanism 53 is driven to axially rotate, the material shaking mechanism 53 drives the wafer to shake up and down, meanwhile, the material shaking angle 532 on the material shaking mechanism 53 is attached to the lower bottom surface of the wafer, and when the material shaking mechanism 53 axially rotates, at least one material shaking angle 532 is abutted against the lower bottom surface of the wafer and scrapes water stains on the lower bottom surface of the wafer to the direction of the material pouring assembly 52; the outermost time delay mechanism 54 axially rotates and drives the adjacent time delay mechanisms 54 to rotate in sequence, and when the last time delay mechanism 54 rotates for one circle, the material pouring assembly 52 can be driven to rotate and tilt up through the wafer, so that the workpiece can be clamped conveniently.
Preferably, the material shaking mechanism 53 includes a material shaking rod 531 rotatably connected above the draining portion, and when the material shaking rod 531 rotates for one turn, the material shaking rod 531 is adapted to drive the wafer to shake up and down, so as to accelerate the draining effect of the cleaning solution remained on the wafer; the shaking angle 532 extends along the length direction of the shaking bar 531; the material shaking angle 532 is made of flexible materials, the material shaking rod 531 drives the material shaking angle 532 to axially rotate synchronously, and when the material shaking rod 531 contacts with the lower bottom surface of the wafer, the material shaking angle 532 is gradually deformed and attached to the lower bottom surface of the wafer; when the shake-out angle 532 is from the attaching state to the separating state, the shake-out lever 531 drives the shake-out angle 532 to rotate in a circular arc manner and can scrape the water stain on the lower bottom surface of the wafer to the direction of the pouring assembly 52. When the delay mechanism 54 drives the shaking rod 531 to axially rotate, the shaking angle 532 abuts against the bottom wall of the wafer and pushes the end part of the wafer to tilt upwards, because the shaking rod 531 arranged at the outermost side rotates at the fastest speed, when the shaking rod 531 rotates for one circle, the shaking rod 531 adjacent to the inner side rotates for one station, so that the end part of the wafer can be pushed to tilt upwards each time the shaking angle 532 contacts with the wafer, and the effect of shaking the wafer up and down is realized.
Further, the material shaking bars 531 are rectangular, and a material shaking angle 532 is fixed at the corner of each rectangle; after the workpiece is placed at the upper end of the shaking rod 531, the shaking rod 531 can drive the circular arc track of the shaking angle 532 to rotate, so that water stains on the bottom surface of the wafer are scraped to the direction of the last shaking rod 531, and the drying efficiency of residual inclined liquid on the bottom surface of the wafer is accelerated; the shaking angle 532 is an elastic adhesive tape, the cross section of the shaking angle 532 is elliptical, and the end part of the long shaft end of the shaking angle 532 is fixed at the edge angle of the shaking angle 532; when the material shaking bars 531 circumferentially rotate, at least one material shaking angle 532 is abutted against the bottom wall of the wafer, so as to drive water stains on the bottom wall of the wafer to the direction of the last material shaking bar 531. When the material shaking rod 531 rotates to the point that the two material shaking angles 532 are abutted against the bottom surface of the wafer, the material shaking angles 532 are deformed by the wafer, and the material shaking rod 531 continues to rotate to the point that the material shaking angles 532 are separated from the bottom surface of the wafer, the material shaking angles 532 gradually recover to be elliptical, and the residual cleaning liquid on the bottom surface of the wafer is scraped towards the material pouring assembly 52.
In order to improve the drying effect of the wafer, a plurality of collecting grooves 533 are provided on each rectangular surface of the material shaking bar 531 at equal intervals, and a plurality of collecting grooves 533 are provided along the length direction of the material shaking bar 531, where the collecting grooves 533 are provided to prevent the residual cleaning solution on the wafer from remaining on the rectangular surface of the material shaking bar 531, and contact with the lower bottom surface of the wafer again to adhere to the lower bottom surface of the wafer. When the material shaking bars 531 rotate to the two material shaking corners 532 and contact with the bottom surface of the wafer, the cleaning liquid dropped on the wafer will drop on the rectangular surface of the material shaking bars 531 and flow into the collecting tank 533, so that the cleaning liquid will not be stored on the upper surface of the rectangular surface of the material shaking bars 531, and the adhesion of the cleaning liquid to the bottom surface of the wafer is prevented. The collection grooves 533 may be arranged in one or more rows according to the width of the rectangular surface of the shaking bar 531. The collecting tank 533 is suitable for collecting water stains dropping onto the end surface of the shaking rod 531; one end of the shaking rod 531, which is far away from the time delay mechanism 54, is further provided with a plurality of air channels 534, each air channel 534 corresponds to one rectangular surface of the shaking rod 531, and the air channels 534 are communicated with the collecting groove 533; wherein the collecting tank 533 is adapted to collect water droplets falling on the crystal when the shaking bar 531 axially rotates the collecting tank 533 in the "12-point" orientation; when collection tank 533 is rotated to the "2-point" orientation, air passage 534 is vented and blows outward through collection tank 533. One end of the material shaking rod 531 far away from the time delay mechanism 54 is fixed with a blast pipe, one blast pipe corresponds to one material shaking rod 531, and the blast pipe is suitable for blowing air into the air passage 534; a gap is provided between the air duct 534 and the inner bottom wall of the collection tank 533, which provides a space for collecting the cleaning solution so that the cleaning solution collected by the inner bottom wall of the collection tank 533 is not blown to the lower bottom surface of the wafer by the air flow when the air duct 534 blows air outwards through the collection tank 533. When the material shaking rod 531 rotates to any row of collecting grooves 533 and rotates to a 12-point direction, at the moment, the two material shaking angles 532 are propped against the lower bottom surface of the wafer, and the cleaning liquid dropped on the wafer falls into the collecting grooves 533; when the shaking rod 531 continues to rotate from the collecting tank 533 to the '2 point' direction, the air blast pipe is communicated with the air duct 534 at the corresponding position and blows air into the collecting tank 533, so that not only is the drying effect of the cleaning solution on the bottom surface under the wafer accelerated, but also the residual cleaning solution on the bottom surface under the wafer is blown to the direction of the pouring assembly 52. The air blowing of the collecting tank 533 is matched with the shaking angle 532, so that the water scraping effect of the shaking angle 532 is improved; and when the collecting tank 533 rotates to the '6 point' orientation, the collecting tank 533 can pour out the collected water drops, so that the collecting work of the next rotation period is convenient.
Optionally, the delay mechanism 54 includes: the rotary table 541 is circular, and the rotary table 541 is vertically arranged; the rotating shaft 542 is vertically fixed at the center of the turntable 541, and the other end of the rotating shaft 542 is fixed at the rotation center of the shaking rod 531; a plurality of the tooth columns 544 are vertically fixed on a side wall of the turntable 541 away from the rotation shaft 542, and the tooth columns 544 are annularly arranged along the axial direction of the turntable 541; the linkage teeth 543 are vertically fixed on a side wall of the turntable 541 away from the tooth columns 544, and the linkage teeth 543 are disposed between any two tooth columns 544; the number of the turntables 541 is three, the three turntables 541 are linked with each other, and one turntable 541 corresponds to one shaking bar 531; a delay motor 545 is fixed below the outermost turntable 541, and a driving wheel adapted to the tooth column 544 is fixed on a conveying shaft of the delay motor 545; when the driving wheel rotates circumferentially to drive the outermost turntable 541 to rotate one circle, the linkage teeth 543 on the inner wall of the outermost turntable 541 are propped against the tooth columns 544 of the middle turntable 541 so as to push the middle turntable 541 to rotate one station; when the middle turntable 541 rotates one turn, the linkage teeth 543 on the inner wall of the middle turntable 541 abut against the teeth 544 of the last turntable 541 to drive the last turntable 541 to rotate one station. When the rotary table 541 rotates for one circle, the inner linkage teeth 543 drive the innermost rotary table 541 to rotate for one station, and when the three rotary tables 541 rotate in the axial direction, the corresponding shaking rods 531 are synchronously driven to rotate in the axial direction.
Preferably, the pouring assembly 52 includes: the support column 521, the linkage rod 522, the accommodation block 523 and the linkage block 524, wherein the accommodation block 523 is rectangular, the length direction of the accommodation block 523 is consistent with the length direction of the material shaking rod 531, the accommodation block 523 and the material shaking rod 531 are parallel to each other, and the setting height of the accommodation block 523 is greater than the height of the material shaking rod 531; a placing groove is formed in one side, close to the material shaking rod 531, of the containing block 523, the placing groove is formed along the width direction of the containing block 523, and the grooving width of the placing groove is larger than the thickness of the wafer, so that when the material shaking rod 531 pushes the other end of the wafer to shake, a gap is formed between the wafer inserted into the placing groove and the inner wall of the placing groove, and the other end of the wafer can shake up and down conveniently; the support columns 521 are fixed at both ends of the accommodation block 523; the linkage rod 522 is fixed at one end of the accommodating block 523 near the turntable 541, the linkage block 524 is L-shaped, and the linkage block 524 is fixed at the end of the linkage rod 522; when the linkage tooth 543 of the last turntable 541 shaft abuts against the linkage block 524, the linkage tooth 543 pushes the linkage block 524 to slide downwards in an arc manner, so that the accommodation block 523 is driven by the linkage rod 522 to synchronously rotate downwards in an arc manner by taking the support column 521 as an axis, and the end part of the wafer is driven to tilt. When the rotary table 541 rotates axially for one circle, at this time, the linkage teeth 543 are propped against the linkage blocks 524, the rotary table 541 continues to rotate, the linkage teeth 543 push the linkage blocks 524 to move downwards in an arc, and the linkage blocks 524 push the containing blocks 523 to move downwards by taking the supporting columns 521 as the axial points through the linkage rods 522, so that wafers inserted into the placing grooves are tilted, and the workpieces can be clamped conveniently in the next process.
The above-described preferred embodiments according to the present invention are intended to suggest that, in view of the above description, various changes and modifications may be made by the worker in question without departing from the scope of the technical idea of the present invention. The technical scope of the present invention is not limited to the description, but must be determined according to the scope of claims.
Claims (4)
1. An indium phosphide cleaning system with high cleaning efficiency, comprising:
the device comprises a bracket, a cleaning tank, a feeding part, a cleaning part and a draining part, wherein the cleaning tank is fixed at the upper end of the bracket, and cleaning solution is filled in the cleaning tank;
the feeding part is arranged at the upper end of the cleaning tank in a lifting manner and is suitable for clamping a wafer to clean the surface;
the cleaning part is rotatably arranged in the cleaning pool and can be rubbed with the outer wall of the wafer to clean the wafer;
the draining part is fixed on one side of the bracket and is suitable for draining the wafer; wherein the method comprises the steps of
The feeding part drives the wafer to be immersed in the cleaning solution until the wafer contacts with the cleaning part, and then the cleaning part is rotated to frictionally clean the wafer;
after the cleaning is finished, carrying the wafer to a draining part, wherein the draining part can scrape off water stains at the bottom of the wafer;
the cleaning part includes: the cleaning device comprises a driving motor, a driven shaft, a transmission belt, two sliding assemblies and a plurality of cleaning assemblies, wherein the driving motor is fixed on the bracket and is arranged below the cleaning pool;
the driven shaft is rotatably arranged on one side of the driving motor in parallel, two ends of the driven shaft protrude out of two side walls of the cleaning pool, and the driven shaft is in transmission connection with the driving motor;
the cleaning components are rotatably arranged in the cleaning tank, the outer ends of the cleaning components protrude out of the side wall of the cleaning tank, and two adjacent cleaning components are meshed with each other; the cleaning assembly at the outer side closest to the driven shaft is in transmission connection with the driven shaft through a transmission belt;
the two sliding assemblies are symmetrically arranged on the inner wall of the cleaning pool, and the sliding assemblies are linked with the cleaning assemblies; wherein the method comprises the steps of
The driving motor drives the cleaning assembly to axially rotate so as to enable the cleaning assembly to rub the surface of the wafer to clean the wafer;
the sliding component can drive the cleaning component to slide horizontally, so that the cleaning component slides from one end of the wafer to the other end while rotating axially;
the cleaning assembly includes: the cleaning device comprises rotating teeth, a positioning column, a telescopic column and a brush head, wherein the rotating teeth are fixed at the end part of the positioning column, and the rotating teeth are arranged on the cleaning Chi Waibi; adjacent two rotating teeth are meshed with each other;
the positioning column is hollow, and the telescopic column is slidably arranged in the positioning column;
the hair brush head is fixed at the end part of the telescopic column far away from the positioning column, and the hair brush head is suitable for rubbing a wafer; wherein the method comprises the steps of
When the rotating teeth axially rotate, the brush heads can be driven to axially rotate so as to rub the wafer;
the sliding assembly includes: the cleaning device comprises a fixed plate, a sliding plate and two first linear moving pairs, wherein the two first linear moving pairs are fixed on the inner side wall of the cleaning tank, and the first linear moving pairs are consistent with the length direction of the telescopic column;
the two ends of the fixing plate are vertically fixed on the inner side wall of the cleaning tank, and the fixing plate is mutually vertical to the telescopic column; the fixed plate is provided with a plurality of through holes matched with Mao Shutou;
the two ends of the sliding plate are respectively fixed at the movable ends of the two first linear moving pairs, a plurality of limiting holes matched with the telescopic columns are formed in the sliding plate, a locking bearing is fixed in each limiting hole, an inner ring of each locking bearing is fixed on the outer wall of each telescopic column, and an outer ring of each locking bearing is fixed on the inner wall of each limiting hole; wherein the method comprises the steps of
When the sliding plate is driven by the first linear moving pair to slide horizontally, the sliding plate drives the telescopic column to slide horizontally through the locking bearing;
when the rotating teeth drive the positioning columns to axially rotate, the telescopic columns drive the brush heads to axially rotate;
the material loading portion includes: the cleaning device comprises a lifting plate, a fixing frame, a placing plate, a conveying belt, two feeding cylinders and two second linear moving pairs, wherein the fixing frame is fixed above the cleaning pool, the two feeding cylinders are fixed at the upper end of the fixing frame, the lifting plate is arranged below the fixing frame in a lifting manner, and the lifting plate is fixed at the end part of the movable end of the feeding cylinder;
the placing plate is fixed on the lifting plate, the placing plate is rectangular, and the upper end of the placing plate is wavy;
the conveying belt is arranged on one side of the fixing frame and is suitable for conveying wafers;
the two second linear moving pairs are fixed on two sides of the fixed frame, and are parallel to each other,
a cross beam is fixed between the sliding ends of the two second linear moving pairs; wherein the method comprises the steps of
After the wafer is placed on the placing plate, the feeding cylinder drives the lifting plate to move downwards so as to enable the wafer to be immersed into the cleaning solution;
the brush head horizontally slides to the upper part of the wafer, and the brush head axially rotates to rub the outer wall of the wafer;
after the cleaning is finished, the second linear moving pair drives the cross beam to horizontally slide so as to push the wafer onto the conveying belt from the placing plate;
the draining part includes: the device comprises a draining pond, a pouring assembly, a plurality of material shaking mechanisms and a plurality of delay mechanisms, wherein the material shaking mechanisms are all arranged above the draining pond, each material shaking mechanism is suitable for supporting a wafer, the delay mechanisms are rotatably arranged on the side wall of the draining pond, one delay mechanism corresponds to one material shaking mechanism, and each delay mechanism sequentially rotates to drive each material shaking mechanism to sequentially rotate;
the material pouring assembly is arranged at the position of the material shaking mechanism of the last shaking wafer and is linked with the last delay mechanism; wherein the method comprises the steps of
After the wafer is horizontally placed on each shaking mechanism, each shaking mechanism rotates in sequence to shake the wafer thereon and scrape off water stains at the bottom of the wafer;
when the last time delay mechanism rotates for one circle, the material pouring assembly is driven to rotate so as to tilt the wafer;
the material shaking mechanism comprises: the material shaking rods are rectangular and can be rotatably arranged above the water draining pool;
the material shaking angles are arranged along the length direction of the material shaking rod, and one material shaking angle is correspondingly fixed at one edge angle of the material shaking rod; wherein the method comprises the steps of
When the delay mechanism drives the shaking rod to axially rotate, the shaking angle initially abuts against the bottom wall of the wafer and pushes the end part of the wafer to tilt upwards;
when the material shaking angle is separated from the bottom wall of the wafer, the material shaking angle can scrape the water stain on the bottom surface of the wafer to the direction of the last material shaking rod.
2. A cleaning system for indium phosphide having high cleaning efficiency as set forth in claim 1, wherein,
the outer wall of the telescopic column is fixedly provided with a plurality of limiting strips along the axial direction, and the inner wall of the positioning column is provided with a plurality of limiting grooves matched with the limiting strips.
3. A cleaning system for indium phosphide having high cleaning efficiency as set forth in claim 2, wherein,
the bristle includes: the fixing column and a plurality of brush hair, a plurality of brush hair annular are fixed the fixed column outer wall, just the brush hair annular sets up into multilayer structure.
4. A cleaning system for indium phosphide having high cleaning efficiency as set forth in claim 3, wherein,
and each through hole is internally provided with a shrinkage column, the shrinkage columns are in an hourglass shape, and when the fixing columns drive the bristles to pass through the shrinkage columns, the bristles are extruded and deformed by the inner walls of the shrinkage columns so as to eject residues adhered to the outer walls of the bristles.
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| CN202210117536.6A CN114653662B (en) | 2022-02-08 | 2022-02-08 | Indium phosphide cleaning system with high cleaning efficiency |
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| CN115602585B (en) * | 2022-08-31 | 2023-06-02 | 先之科半导体科技(东莞)有限公司 | Silicon carbide diode etching cleaning device |
| CN116140264B (en) * | 2023-04-19 | 2023-08-18 | 河北安国振宇药业有限公司 | Medicine washing machine for radix tetrastigme preparation |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09283478A (en) * | 1996-04-11 | 1997-10-31 | Ebara Corp | Wafer carrier washing device |
| KR20030018331A (en) * | 2001-08-28 | 2003-03-06 | 삼성전자주식회사 | semiconductor wafer washing system |
| CN206979078U (en) * | 2017-07-14 | 2018-02-09 | 南京工程学院 | A kind of spiral is plug-type to shrink test tube brush |
| CN110976353A (en) * | 2019-12-18 | 2020-04-10 | 苏州精濑光电有限公司 | Cleaning device |
| CN111009482A (en) * | 2019-12-18 | 2020-04-14 | 福建北电新材料科技有限公司 | Wafer cleaning device and wafer cleaning equipment |
| CN111219953A (en) * | 2020-01-16 | 2020-06-02 | 长江存储科技有限责任公司 | Wafer drying device, wafer drying method, wafer cleaning system, and wafer cleaning and drying device |
| CN111530875A (en) * | 2020-04-30 | 2020-08-14 | 柯伟超 | Test tube cleaning device |
| CN111957625A (en) * | 2020-09-16 | 2020-11-20 | 马鞍山荣泰科技有限公司 | Cleaning and collecting device for quartz wafer processing |
| CN112547626A (en) * | 2020-12-01 | 2021-03-26 | 皖西学院 | Raw material cleaning and decontamination device for photoelectronic device production |
| CN112893302A (en) * | 2020-12-22 | 2021-06-04 | 江西龙芯微科技有限公司 | Cleaning device for electronic semiconductor processing |
| CN214261009U (en) * | 2020-11-30 | 2021-09-24 | 常州德匠数控科技有限公司 | Automatic clear numerical control cutting fluid recovery liquid storage tank |
| CN113649348A (en) * | 2021-08-26 | 2021-11-16 | 上海大学 | Cleaning system for special-shaped semiconductor parts |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12104242B2 (en) * | 2019-05-10 | 2024-10-01 | Veeco Instruments Inc. | Deposition system with integrated carrier cleaning modules |
-
2022
- 2022-02-08 CN CN202210117536.6A patent/CN114653662B/en active Active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09283478A (en) * | 1996-04-11 | 1997-10-31 | Ebara Corp | Wafer carrier washing device |
| KR20030018331A (en) * | 2001-08-28 | 2003-03-06 | 삼성전자주식회사 | semiconductor wafer washing system |
| CN206979078U (en) * | 2017-07-14 | 2018-02-09 | 南京工程学院 | A kind of spiral is plug-type to shrink test tube brush |
| CN110976353A (en) * | 2019-12-18 | 2020-04-10 | 苏州精濑光电有限公司 | Cleaning device |
| CN111009482A (en) * | 2019-12-18 | 2020-04-14 | 福建北电新材料科技有限公司 | Wafer cleaning device and wafer cleaning equipment |
| CN111219953A (en) * | 2020-01-16 | 2020-06-02 | 长江存储科技有限责任公司 | Wafer drying device, wafer drying method, wafer cleaning system, and wafer cleaning and drying device |
| CN111530875A (en) * | 2020-04-30 | 2020-08-14 | 柯伟超 | Test tube cleaning device |
| CN111957625A (en) * | 2020-09-16 | 2020-11-20 | 马鞍山荣泰科技有限公司 | Cleaning and collecting device for quartz wafer processing |
| CN214261009U (en) * | 2020-11-30 | 2021-09-24 | 常州德匠数控科技有限公司 | Automatic clear numerical control cutting fluid recovery liquid storage tank |
| CN112547626A (en) * | 2020-12-01 | 2021-03-26 | 皖西学院 | Raw material cleaning and decontamination device for photoelectronic device production |
| CN112893302A (en) * | 2020-12-22 | 2021-06-04 | 江西龙芯微科技有限公司 | Cleaning device for electronic semiconductor processing |
| CN113649348A (en) * | 2021-08-26 | 2021-11-16 | 上海大学 | Cleaning system for special-shaped semiconductor parts |
Non-Patent Citations (1)
| Title |
|---|
| 彩色滤光片清洗机出口玻璃基板烘干装置改造;吴云桂等;《科技创新导报》;20191011(第29期);61-62 * |
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