CN1140914C - 与硅具有结晶碱土金属氧化物界面的半导体结构制造方法 - Google Patents
与硅具有结晶碱土金属氧化物界面的半导体结构制造方法 Download PDFInfo
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- CN1140914C CN1140914C CNB00120260XA CN00120260A CN1140914C CN 1140914 C CN1140914 C CN 1140914C CN B00120260X A CNB00120260X A CN B00120260XA CN 00120260 A CN00120260 A CN 00120260A CN 1140914 C CN1140914 C CN 1140914C
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- silicon
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- earth metal
- alkaline
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Abstract
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Claims (22)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB00120260XA CN1140914C (zh) | 2000-07-14 | 2000-07-14 | 与硅具有结晶碱土金属氧化物界面的半导体结构制造方法 |
HK02104063A HK1043246A1 (en) | 2000-07-14 | 2002-05-31 | Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon. |
Applications Claiming Priority (1)
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CNB00120260XA CN1140914C (zh) | 2000-07-14 | 2000-07-14 | 与硅具有结晶碱土金属氧化物界面的半导体结构制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN1334593A CN1334593A (zh) | 2002-02-06 |
CN1140914C true CN1140914C (zh) | 2004-03-03 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CNB00120260XA Expired - Fee Related CN1140914C (zh) | 2000-07-14 | 2000-07-14 | 与硅具有结晶碱土金属氧化物界面的半导体结构制造方法 |
Country Status (2)
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CN (1) | CN1140914C (zh) |
HK (1) | HK1043246A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6916717B2 (en) * | 2002-05-03 | 2005-07-12 | Motorola, Inc. | Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate |
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2000
- 2000-07-14 CN CNB00120260XA patent/CN1140914C/zh not_active Expired - Fee Related
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2002
- 2002-05-31 HK HK02104063A patent/HK1043246A1/xx not_active IP Right Cessation
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Publication number | Publication date |
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CN1334593A (zh) | 2002-02-06 |
HK1043246A1 (en) | 2002-09-06 |
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