CN1334593A - 与硅具有结晶碱土金属氧化物界面的半导体结构制造方法 - Google Patents
与硅具有结晶碱土金属氧化物界面的半导体结构制造方法 Download PDFInfo
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- CN1334593A CN1334593A CN 00120260 CN00120260A CN1334593A CN 1334593 A CN1334593 A CN 1334593A CN 00120260 CN00120260 CN 00120260 CN 00120260 A CN00120260 A CN 00120260A CN 1334593 A CN1334593 A CN 1334593A
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- semiconductor structure
- silicon
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- earth metal
- alkaline
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Abstract
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Claims (24)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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CNB00120260XA CN1140914C (zh) | 2000-07-14 | 2000-07-14 | 与硅具有结晶碱土金属氧化物界面的半导体结构制造方法 |
HK02104063A HK1043246A1 (en) | 2000-07-14 | 2002-05-31 | Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon. |
Applications Claiming Priority (1)
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CNB00120260XA CN1140914C (zh) | 2000-07-14 | 2000-07-14 | 与硅具有结晶碱土金属氧化物界面的半导体结构制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN1334593A true CN1334593A (zh) | 2002-02-06 |
CN1140914C CN1140914C (zh) | 2004-03-03 |
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CNB00120260XA Expired - Fee Related CN1140914C (zh) | 2000-07-14 | 2000-07-14 | 与硅具有结晶碱土金属氧化物界面的半导体结构制造方法 |
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CN (1) | CN1140914C (zh) |
HK (1) | HK1043246A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100359648C (zh) * | 2002-05-03 | 2008-01-02 | 飞思卡尔半导体公司 | 其上具有半导体器件的单晶氧化物的生长方法 |
-
2000
- 2000-07-14 CN CNB00120260XA patent/CN1140914C/zh not_active Expired - Fee Related
-
2002
- 2002-05-31 HK HK02104063A patent/HK1043246A1/xx not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100359648C (zh) * | 2002-05-03 | 2008-01-02 | 飞思卡尔半导体公司 | 其上具有半导体器件的单晶氧化物的生长方法 |
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Publication number | Publication date |
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CN1140914C (zh) | 2004-03-03 |
HK1043246A1 (en) | 2002-09-06 |
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