CN114078729A - Substrate processing apparatus and substrate conveying method - Google Patents

Substrate processing apparatus and substrate conveying method Download PDF

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Publication number
CN114078729A
CN114078729A CN202110907202.4A CN202110907202A CN114078729A CN 114078729 A CN114078729 A CN 114078729A CN 202110907202 A CN202110907202 A CN 202110907202A CN 114078729 A CN114078729 A CN 114078729A
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China
Prior art keywords
substrate
space
opening
processing apparatus
substrate processing
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CN202110907202.4A
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Chinese (zh)
Inventor
三枝直也
田边广太
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67126Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742Mechanical parts of transfer devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67069Apparatus for fluid treatment for etching for drying etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67167Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67196Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67201Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67213Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber

Abstract

The invention provides a substrate processing apparatus and a substrate conveying method capable of inhibiting deterioration of a structure arranged at an opening. The substrate processing apparatus includes: a substrate carry-in-and-out module having an internal space through which the substrate passes, the internal space being controlled to be an atmospheric pressure environment when the substrate is carried out to an external space controlled to be a positive pressure compared with the atmospheric pressure; an opening part which is arranged in the substrate sending-in module and communicates the internal space with the external space; a gate provided in the opening and having a conveyance space; a jetting part jetting the purge gas from the outer space side to the edge of the opening part; and an exhaust port for exhausting the transport space through a path different from the opening portion.

Description

Substrate processing apparatus and substrate conveying method
Technical Field
The present invention relates to a substrate processing apparatus and a substrate conveying method.
Background
In the substrate processing apparatus, a structure such as a shutter is provided in an opening through which the substrate passes, for example, when the substrate is fed (see, for example, patent document 1).
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open publication No. 2019-220588
Disclosure of Invention
Technical problem to be solved by the invention
The invention provides a technique for suppressing deterioration of a structure provided in an opening.
Technical solution for solving technical problem
A substrate processing apparatus according to an embodiment of the present invention includes: a substrate carry-in-and-out module having an internal space through which the substrate passes, the internal space being controlled to be an atmospheric pressure environment when the substrate is carried out to an external space controlled to be a positive pressure compared with the atmospheric pressure; an opening part which is arranged on the substrate sending-in module and communicates the internal space with the external space; a gate provided in the opening and having a conveyance space; a jetting part jetting the purge gas from the outer space side to the edge of the opening part; and an exhaust port for exhausting the transport space through a path different from the opening portion.
Effects of the invention
According to the present invention, deterioration of a structure provided in an opening can be suppressed.
Drawings
Fig. 1 is a diagram showing an example of a schematic configuration of a substrate processing apparatus 1 according to an embodiment.
Fig. 2 is a diagram showing an example of a schematic structure of the load lock chamber 4.
Fig. 3 is a diagram showing an example of a schematic configuration of the load lock chamber 4 and the shutter 5.
Fig. 4 is a diagram showing an example of a schematic configuration of the load lock chamber 4 and the shutter 5.
Fig. 5 is a diagram schematically showing the schematic configuration of the substrate G, the gate 5, and the load lock chamber 4.
Fig. 6 is a diagram showing an example of a schematic configuration of the load lock panel 6.
Fig. 7 is a diagram showing an example of a schematic configuration of the load lock panel 6.
Fig. 8 is a diagram schematically showing the flow of the ejected purge gas.
Fig. 9 is a view schematically showing the flow of the ejected purge gas.
Fig. 10 is a diagram showing an example of a schematic configuration of the nozzle 61.
Fig. 11 is a view of the load lock panel 6 viewed from the load lock chamber 4 side.
Fig. 12 is a view schematically showing the flow of the gas to be exhausted.
Fig. 13 is a view schematically showing the flow of the gas to be exhausted.
Fig. 14 is a view schematically showing the flow of the gas to be exhausted.
Fig. 15 is a view schematically showing the flow of the gas to be exhausted.
Fig. 16 is a diagram schematically showing the flow of the gas to be exhausted.
Fig. 17 is a view schematically showing the flow of the gas to be exhausted.
Fig. 18 is a flowchart showing an example of a process (substrate carrying method) performed in the substrate processing apparatus 1.
Fig. 19 is a diagram showing an example of the schematic configuration of the load lock chamber 4, the shutter 5, the nozzle 61, and the exhaust pipe 64A.
Description of the reference numerals
1 substrate processing apparatus
2 processing Chamber
3 transport chamber
4 load lock chamber
5 gate
6 load lock panel
7 control part
8 loader
42 opening part
51U door cover
51L door cover
55 guide rail
61 nozzle (discharge part)
421U edge part
421L edge part
422U edge part
422L edge part
641U vent
642U exhaust port
643U exhaust port
644U air outlet
645U exhaust port
646U exhaust port
641L vent
642L exhaust port
643L vent
644L exhaust port
645L exhaust port
646L exhaust port.
Detailed Description
Hereinafter, embodiments of a substrate processing apparatus and a substrate transfer method according to the present disclosure will be described with reference to the drawings. Further, the disclosed substrate processing apparatus and substrate conveying method are not limited to the present embodiment.
In the substrate processing apparatus, when the processed substrate is sent out to the outside, the processing gas attached to the substrate may adhere to a structure provided in the opening through which the substrate is sent out, and the structure may be deteriorated, such as corroded. Therefore, a technique for suppressing deterioration of a structure provided in the opening of the outgoing substrate is desired.
Fig. 1 is a diagram showing an example of a schematic configuration of a substrate processing apparatus 1 according to an embodiment. In the figure, an XYZ coordinate system is shown. The X-axis direction and the Y-axis direction correspond to the left-right direction and the front-back direction of the substrate processing apparatus when the side of the opening through which the substrate is fed is defined as the front surface. The Z-axis direction corresponds to the vertical direction (height direction) of the substrate processing apparatus disposed horizontally, i.e., the vertical direction.
The substrate processing apparatus 1 includes a processing chamber 2, a transfer chamber 3, a load lock chamber 4, a shutter 5, a load lock panel 6, and a control section 7. In fig. 1, the load lock panel 6 is shown in a state of being removed from the shutter 5. The control section 7 is illustrated by functional blocks. The load lock chamber 4 of the substrate processing apparatus 1 can be connected to the loader 8 on the side opposite to the transfer chamber 3. The loader 8 may not be a component of the substrate processing apparatus 1, and may be a component of the substrate processing apparatus 1.
In the substrate processing apparatus 1, each of the processing chamber 2, the transfer chamber 3, and the load lock chamber 4 has an internal space for storing a substrate and the like. The adjacent internal spaces communicate with each other via the opening portion. An opening/closing structure is provided in the opening. An example of the opening and closing structure is a shutter, and one of them is illustrated as a shutter 5. By closing the opening to make the internal space airtight, the internal spaces can be controlled to have different atmospheric pressure environments. Examples of controllable atmospheric pressure environments are atmospheric pressure environments and reduced pressure environments. The reduced-pressure environment is an environment (e.g., a vacuum-pressure environment) that is lower than the atmospheric pressure environment.
The constituent elements of the substrate processing apparatus 1 will be described in order below. In addition, a substrate to be processed by the substrate processing apparatus 1 is illustrated as a substrate G in fig. 5 described later, and hereinafter referred to as a substrate G.
The process chamber 2 is a part (module) where processing of the substrate G is performed. The processing chamber 2 is exemplified by a plurality of processing chambers 21 to 23 capable of processing the substrate G. The processes performed on the substrates G in the process chambers 21 to 23 may be the same process or different processes. An example of the substrate G is a glass substrate for FPD (Flat Panel Display). Examples of FPDs are liquid crystal displays, organic EL displays, and the like. Other examples of the substrate G are a sheet or a film made of a flexible material such as polyimide. An example of substrate processing is plasma processing. Examples of the plasma process are plasma processes such as an etching process, an ashing process, and a film forming process. In substrate processing, various process gases can be used. Examples of the processing gas include a chlorine-based gas containing chlorine atoms and a fluorine-based gas containing fluorine atoms. Such a process gas may be a corrosive gas, for example, for a part of the components of the substrate processing apparatus 1. In particular, when mixed with an atmosphere containing moisture, the corrosiveness thereof becomes more remarkable.
The conveyance chamber 3 is a portion (module) that conveys the substrate G between the process chamber 2 and the load lock chamber 4. The substrate G can be transported by a vacuum robot, for example. Although not shown, the transfer chamber 3 has a 2-stage transfer robot, and can transfer substrates, that is, transfer processed substrates G from the processing chamber 2 and hold the substrates, and transfer unprocessed substrates G into the processing chamber 2.
The load lock chamber 4 is a substrate carry-in/out module that temporarily holds the substrate G in a buffer portion, not shown, provided inside and mediates the transfer of the substrate G between the transfer chamber 3 and the external space. In this example, the loader 8 has a space corresponding to an external space, and the load lock chamber 4 carries in and out the substrate G between the loader 8 and the load lock chamber. The carry-in of the substrate G includes a process of taking (carrying) the substrate G (unprocessed substrate) before being processed in the processing chamber 2 into the internal space of the load lock chamber 4 from the loader 8. The unloading of the substrate G includes a process of taking out (unloading) the substrate G (processed substrate) processed in the processing chamber 2 from the load lock chamber 4 to the loader 8. Further, since the transfer robot has a 2-layer structure as described above, the load lock chamber 4 also has a 2-layer structure. Referring also to fig. 2, the load lock chamber 4 will be described.
Fig. 2 is a diagram showing an example of a schematic structure of the load lock chamber 4. The load lock chamber 4 includes a main body 41 and an opening 42. The main body 41 defines an internal space S. The opening 42 communicates the internal space S with the external space, i.e., the loader 8. When the substrate G is sent out to the loader 8 through the internal space S, the internal space S is controlled to be at atmospheric pressure, and the loader 8 is controlled to be at a positive pressure compared to the atmospheric pressure. The control is performed by a control unit 7 described later.
The internal space S includes an internal space SU (upper internal space) and an internal space SL (lower internal space) which are separated from each other in the up-down direction. Correspondingly, the opening 42 includes an opening 42U and an opening 42L.
The opening 42U communicates the internal space SU with the loader 8. An edge portion extending in the vertical direction (Z-axis direction) of the opening 42U is referred to as an edge portion 421U. The edge 421U is a pair of edges located on the left and right of the opening 42U. An edge portion extending in the left-right direction (X-axis direction) of the opening 42U is referred to as an edge portion 422U. The edge portions 422U are a pair of edge portions located above and below the opening 42U.
The opening 42L communicates the internal space SL with the loader 8. An edge portion extending in the vertical direction (Z-axis direction) of the opening 42L is referred to as an edge portion 421L. The edge 421L is a pair of edges located on the left and right of the opening 42L. An edge portion extending in the left-right direction (X-axis direction) of the opening 42L is referred to as an edge portion 422L. The edge 422L is a pair of edges located above and below the opening 42L.
Returning to fig. 1, the gate 5 is provided in an opening portion of the load lock chamber 4 on the opposite side of the transport chamber 3 across the load lock chamber 4, that is, on the loader 8 side. As described above, referring to fig. 3 and 4, the shutter 5 provided in the load lock chamber 4 will be further described.
Fig. 3 and 4 are diagrams showing an example of a schematic configuration of the load lock chamber 4 and the shutter 5. Fig. 3 is a half sectional view. The hollow arrows in fig. 4 schematically show the opening and closing directions of the valve.
The main body 41 of the load lock chamber 4 is illustrated as a wall defining the upper, lower, and side surfaces of the internal space S. The wall portions are denoted by reference numerals and are illustrated as an upper wall 411, an intermediate wall 412, and a lower wall 413. The upper wall 411 defines an upper surface of the internal space SU among the internal space S. The intermediate wall 412 defines a lower surface of the internal space SU and an upper surface of the internal space SL among the internal space S. The lower wall 413 defines a lower surface of the internal space SL in the internal space S.
The shutter 5 is provided in the opening 42. More specifically, the shutter 5 includes a shutter 5U, a shutter 5L, and a partition wall 56. The shutter 5U is an upper shutter corresponding to the opening 42U. When the shutter 5U is opened, the opening communicates with the opening 42U. The opening of the gate 5U can define an upper conveyance space that is continuous with the internal space SU and communicates with the inside of the loader 8, between the load lock chamber 4 and the load lock panel 6. The shutter 5L is a lower shutter corresponding to the opening 42L. When the shutter 5L is opened, the opening communicates with the opening 42L. The opening of the gate 5L defines a lower conveyance space that is continuous with the internal space SL and communicates with the inside of the loader 8, between the load lock chamber 4 and the load lock panel 6. The partition wall 56 is provided between the shutter 5U and the shutter 5L and connected to the intermediate wall 412 of the load lock chamber 4. The partition wall 56 can define part of the upper and lower conveyance spaces. Hereinafter, the upper side conveyance space and the lower side conveyance space are collectively referred to as a conveyance space.
The shutter 5U includes a door cover 51U, a valve body 52U, a cylinder 53U, a guide block 54U, and a guide rail 55U. The door cover 51U moves up and down together with the valve body 52U provided inside the door cover 51U. The door cover 51U moves along the edge 421U of the opening 42U of the load lock chamber 4 in accordance with the vertical movement of the valve body 52U. The valve body 52U moves up and down in conjunction with the air cylinder 53U. The air cylinder 53U is, for example, an actuator capable of controlling the movement in the vertical direction. Further, the valve body 52U is slidably connected to the guide rail 55U via a guide block 54U. The guide rail 55U guides the valve body 52U in the moving direction. The rails 55U are a pair of rails provided at the edge 421U of the opening 42U, and extend in the vertical direction. The valve body 52U moves along the guide rail 55U, thereby stabilizing the vertical movement of the valve body 52U. The guide rail 55U is a portion that supports the movement of the valve body 52U, and therefore requires higher strength than other portions. An example of a material for the guide rail 55U to which such high strength is applied is SUS 440C.
The shutter 5L includes a door cover 51L, a valve body 52L, a cylinder 53L, a guide block 54L, and a guide rail 55L. The above-described elements are the same as those of the corresponding portions of the shutter 5U, and therefore, description thereof is omitted. The guide rails 55U and 55L are collectively referred to as a guide rail 55 (see fig. 6 described later).
Fig. 5 is a diagram schematically showing the schematic configuration of the substrate G, the gate 5, and the load lock chamber 4. Note that illustration of the load lock panel 6 is omitted. The hollow arrow extending in the lateral direction (Y-axis direction) schematically indicates the moving direction of the substrate G. Hollow arrows extending in the longitudinal direction (Z-axis direction) schematically indicate the opening and closing directions of the shutter 5. For example, when the valve body 52U moves upward and the opening 42U is opened, the substrate G supported by the arm a is sent from the loader 8 to the internal space SU through the upper conveying space. Further, the substrate G is sent out from the internal space SU to the loader 8 via the upper conveyance space. The same description can be made for the valve body 52L. Further, in the load lock chamber 4 and the shutter 5, sealing members for improving airtightness are illustrated by black dots.
Returning to fig. 1, a load lock panel 6 is mounted on the shutter 5. The load lock panel 6 will be described in detail later with reference to fig. 6 and the following drawings.
The control unit 7 controls the operations of the respective units of the substrate processing apparatus 1. The control unit 7 includes a controller 71, a user interface 72, a storage unit 73, and the like. The controller 71 includes a CPU, and controls operations of the process chamber 2, the transfer chamber 3, the load lock chamber 4, the shutter 5, the nozzle 61 (described later) attached to the load lock panel 6, and the like. The user interface 72 includes, for example, a keyboard for inputting commands for the project manager to manage the substrate processing apparatus 1, and a display for visually displaying the operation state of the substrate processing apparatus 1. The storage section 73 stores a control program (software) for realizing various processes executed by the substrate processing apparatus 1 under the control of the controller 71, process condition data, and the like. The user interface 72 and the storage section 73 are connected to the controller 71. Then, if necessary, a desired process in the substrate processing apparatus 1 is performed under the control of the controller 71 by retrieving an arbitrary recipe from the storage section 73 by an instruction from the user interface 72 or the like and causing the controller 71 to execute the recipe. The control program, the processing condition data, and the like can be stored in a computer-readable storage medium such as a CD-ROM, a hard disk, a flexible disk, or a flash memory. In addition, it is also possible to transmit instantaneously for online utilization from other devices, for example, via dedicated lines.
The loader 8 is a section (module) that carries out the carry-in and carry-out of the substrate G between it and the load lock chamber 4. The loader 8 includes, for example, a pointer (indexer) and a pair of cassettes which are disposed on the pointer and which receive the substrates G. In the cassette, a plurality of substrates G are arranged at intervals in the vertical direction. For example, one cassette may house unprocessed substrates and the other cassette may house processed substrates.
Among the above-described operations of the substrate processing apparatus 1, an outline of the operation related to the transport of the substrate G will be described. The shutter 5 is opened to transfer the substrate G from the loader 8 into the load lock chamber 4. The shutter 5 is closed to control the load lock chamber 4 from atmospheric pressure to a reduced pressure atmosphere. The substrate G carried into the load lock chamber 4 is carried to the process chamber 2 via the carrying chamber 3. The transport chamber 3 and the processing chamber 2 are controlled to be a reduced pressure environment. When transferring the substrate G from the load lock chamber 4 to the transfer chamber 3, the load lock chamber 4 and the transfer chamber 3 are controlled to have the same degree of reduced pressure atmosphere. In the process chamber 2, a process of the substrate G using the process gas is performed. After the process is completed, the substrate G is transported to the load lock chamber 4 via the transport chamber 3. After the load lock chamber 4 is pressurized to atmospheric pressure, the gate 5 is opened, and the substrate G is carried out from the load lock chamber 4 to the loader 8.
Here, when the substrate G (processed substrate) processed in the processing chamber 2 is sent out to the loader 8 through the transfer chamber 3 and the load lock chamber 4, the load lock chamber 4 is controlled to be pressurized to the atmospheric pressure, but the loader 8 may be controlled to be a positive pressure compared to the atmospheric pressure. Thus, an air flow is generated from the loader 8 to the load lock chamber 4. Then, a process gas adheres to the substrate G (processed substrate). Therefore, the process gas adhering to the substrate G being sent out diffuses from the loader 8 into the load lock chamber 4, and adheres thereto as the gas flow collides with a structure (for example, the guide rail 55 of the shutter 5) provided at the edge of the opening 42 of the load lock chamber 4. Since the structure provided at the edge of the opening 42 is also exposed to the atmosphere, there is a possibility that the structure is corroded (deteriorated) by the reaction between the components of the process gas and moisture in the atmosphere.
In order to suppress adhesion of the process gas to the structure provided at the edge of the opening 42 (i.e., degradation of the structure), in the substrate processing apparatus 1 of the embodiment, the gas is ejected from the loader 8 side to the edge of the opening 42. Examples of the ejection mechanism (ejection unit) include a nozzle that ejects the purge gas supplied from the purge gas supply line as the gas, and a fan that blows the ambient gas from the loader 8 side. Hereinafter, an example in which the ejection portion is a nozzle will be described. One example of a mechanism for realizing the ejection of the purge gas by the nozzle is the load lock panel 6. The load lock panel 6 is configured by, for example, assembling a nozzle or the like in a partition between the load lock chamber 4 and an external space.
Fig. 6 and 7 are diagrams showing an example of a schematic structure of the load lock panel 6. Fig. 6 is an exploded perspective view of the load lock chamber 4, the shutter 5, and the load lock panel 6. Fig. 7 is a view of the load lock panel 6 viewed from the loader 8 side. The load lock panel 6 is disposed on the opposite side of the load lock chamber 4 with the shutter 5 interposed therebetween, so as to face the load lock chamber 4 and the shutter 5. Fig. 6 and 7 show the nozzle 61, the opening 62, the air supply pipe 63, and the partition wall 66 among the components of the load lock panel 6.
The nozzle 61 is provided opposite to the edge of the opening 42 so as to be able to eject the purge gas from the loader 8 side to the edge of the opening 42 of the load lock chamber 4. Since the guide rail 55 is provided as a structure at the edge of the opening 42, the nozzle 61 is provided so as to face the guide rail 55 and can discharge the purge gas to the guide rail 55. Specifically, the nozzle 61 includes a nozzle 61U and a nozzle 61L. The nozzle 61U is a pair of nozzles provided to face the edge 421U of the opening 42U, i.e., the pair of guide rails 55U. The nozzle 61L is a pair of nozzles provided to face the edge 421L of the opening 42L, i.e., the pair of guide rails 55L.
The opening 62 is provided to communicate with the opening 42 of the load lock chamber 4 and the opening of the shutter 5. The opening 62 includes an opening 62U and an opening 62L. The opening 62U is provided so as to communicate with the opening 42U and the opening of the shutter 5U. The opening 62U can define an end portion of the upper conveyance space. The opening 62L is provided so as to communicate with the opening 42L and the opening of the shutter 5L. The opening 62L can define an end portion of the lower conveyance space.
The gas supply pipe 63 is a gas supply flow path (supply flow path) that supplies purge gas to the nozzle 61. An example of a purge gas is a dry gas. The gas supply pipe 63 includes a gas supply pipe 63U and a gas supply pipe 63L. The gas supply pipe 63U supplies purge gas to the nozzle 61U. The gas supply pipe 63L supplies purge gas to the nozzle 61L.
Partition wall 66 partitions opening 62U and opening 62L, and is provided to connect to partition wall 56 of shutter 5. The partition wall 66 can define an end portion of the upper transport space and a part of an end portion of the lower transport space.
The nozzle 61 is provided to face the guide rail 55, and therefore the nozzle 61 ejects the purge gas to the front surface of the guide rail 55. This enables the purge gas to efficiently collide with the guide rail 55. This will be described with reference to fig. 8 and 9.
Fig. 8 and 9 are diagrams schematically showing the flow of the ejected purge gas. When the purge gas is discharged to the side surface of the guide rail 55 as shown in fig. 8, the flow of the purge gas is less likely to occur in a portion on the opposite side of the side surface via the guide rail 55. Therefore, the process gas diffused from the loader 8 may adhere to the guide rail 55 at a portion where the flow of the purge gas is difficult to occur. As shown in fig. 9, when the purge gas is ejected to the front surface of the guide rail 55, the flow of the purge gas is generated in both the front surface portion and both side portions of the guide rail 55. Therefore, the process gas diffused from the loader 8 is removed by the flow of the purge gas before reaching the guide rail 55, and is less likely to adhere to the guide rail 55. Therefore, it is preferable that the purge gas is not discharged to the side surface of the guide rail 55 but is discharged to the front surface of the guide rail 55.
Fig. 10 is a diagram showing an example of a schematic configuration of a nozzle. In this example, the nozzle 61 is a shower plate that ejects the purge gas from the plurality of holes, and includes a plate 611, a plate 612, and a sealing member 613. The board 611 includes ports 611a, 611b, and 611c disposed at different positions. By selectively connecting the air supply pipe 63 to any one of the ports, the connection position of the air supply pipe 63 can be adjusted. In this example, the air supply pipe 63 is connected to the port 611b, and the other ports 611a and 611c are left (open). The number of ports connected to the air supply pipe 63 is not necessarily 3, and only one port may be provided when the most suitable position for ejecting the gas from the plate 12 to the guide rail 55 is determined, or a plurality of ports may be provided so that the most suitable position is appropriately selected according to the situation.
The plate 612 has a plurality of spouting holes 612 a. The plurality of discharge holes 612a are provided so as to obtain a desired flow rate, for example, a flow rate of about several tens L/min to several hundreds L/min. The plurality of discharge holes 612a are provided in a grid pattern, for example, in the vertical direction (Z-axis direction) and the horizontal direction (X-axis direction). Each of the discharge holes 612a has a circular shape with a diameter of about several mm, for example. Further, the plurality of discharge holes 612a may be arranged in a diagonal direction, a concentric circle, or the like, and each discharge hole may be rectangular, oblong, or the like.
The plate 611 and the plate 612 are joined via a sealing member 613 to hermetically form an internal space that guides the purge gas supplied to the port (in this example, the port 611b) of the plate 611 to each ejection hole 612a of the plate 612.
By using the spray nozzles 61 as shower plates, for example, the ejection range of the purge gas can be easily adjusted. For example, as described above, the structure for exhausting the purge gas discharged from the nozzle 61 is also assembled to the load lock panel 6. This will be described with reference to fig. 11.
Fig. 11 is a view of the load lock panel 6 viewed from the load lock chamber 4 side. The load lock panel 6 includes the exhaust pipe 64, the exhaust ports 641U to 646U, the exhaust ports 641L to 646L, and the purge gas controller 65, in addition to the nozzle 61, the opening portion 62, the air supply pipe 63, and the partition wall 66 described above. In this example, the air supply pipe 63U of the air supply pipe 63 branches at a branch point 63Ua in the upper center of the load lock panel 6, extends in the left-right direction (X-axis direction), and is connected to the nozzle 61. The air supply pipe 63L of the air supply pipe 63 branches at a branch point 63La at the center of the lower portion of the load lock panel 6 and extends in the left-right direction, and is connected to the nozzle 61L.
The exhaust pipe 64 is an exhaust passage for exhausting the conveyance space. The exhaust pipe 64 includes an exhaust pipe 64U and an exhaust pipe 64L.
Exhaust pipe 64U is connected to exhaust port 641U to exhaust port 646U. The exhaust ports 641U to 646U exhaust the upper conveyance space through paths different from the opening 42U, the opening of the shutter 5U, and the opening 62U of the load lock panel 6. The exhaust ports 641U to 646U are provided in the vicinity of the rim 422U of the opening 42U of the load lock chamber 4 (for example, in the range of several mm to several cm), and are provided along the rim 422U (in the X-axis direction).
Exhaust pipe 64L is connected to exhaust port 641L to exhaust port 646L. The exhaust ports 641L to 646L exhaust the lower conveyance space through different paths from the opening 42L, the opening of the shutter 5L, and the opening 62L of the load lock panel 6. The exhaust ports 641L to 646L are provided in the vicinity of the edge 422L of the opening 42L of the load lock chamber 4 and along the edge 422L (in the X-axis direction).
The exhaust pipe 64U and the exhaust pipe 64L are further explained. The exhaust pipe 64U branches at a branch point 64Ua at the upper center of the load lock panel 6 and extends in the left-right direction, and is connected to the exhaust ports 641U to 646U, respectively. The exhaust ports 641U to 646U are provided above the upper conveyance space. Each of the exhaust ports 641U to 646U has a central axis direction (in this example, a central axis direction in the Z axis direction) intersecting with the opening central axis direction (Y axis direction) of the opening 42U. The exhaust ports 641U to 646U are located between a pair of guide rails 55U provided in the left and right edge portions 421U of the opening 42U. Exhaust vent 641U and exhaust vent 646U are disposed near guide rail 55U. The exhaust port 643U and the exhaust port 644U are provided near the center of the upper conveyance space. Exhaust port 642U is disposed between exhaust ports 641U and 643U. Exhaust port 645U is disposed between exhaust ports 644U and 646U.
The exhaust pipe 64L branches at a branch point 64La at the center of the lower portion of the load lock panel 6 and extends in the left-right direction, and is connected to the exhaust ports 641L to 646L. The exhaust ports 641L to 646L are provided below the lower conveyance space. The exhaust ports 641L to 646L have a central axis direction (in this example, a central axis direction in the Z axis direction) intersecting with the opening central axis direction (Y axis direction) of the opening portion 42L. The exhaust ports 641L to 646L are located between a pair of guide rails 55L provided in the left and right edge portions 421L of the opening 42L. Exhaust port 641L and exhaust port 646L are provided near guide rail 55L. The exhaust port 643L and the exhaust port 644L are provided near the center of the lower conveyance space. The exhaust port 642L is disposed between the exhaust ports 641L and 643L. Exhaust port 645L is disposed between exhaust port 644L and exhaust port 646L.
As described above, the exhaust port is provided not only near the guide rail 55 but also near the center of the upper and lower conveyance spaces, and thus the entire conveyance space is easily exhausted. This will be described with reference to fig. 12 to 17.
Fig. 12 to 17 are diagrams schematically showing the flow of the gas to be exhausted. As shown in fig. 12 and 13, when the exhaust port is provided only in the vicinity of the guide rail 55, the flow of the exhaust gas of the purge gas is formed only in the vicinity of the guide rail 55. As shown in fig. 14 and 15, when the exhaust port is also provided between the vicinity of the guide rail 55 and the vicinity of the center of the conveying space (intermediate position), the flow of the exhaust gas of the purge gas is also formed at the intermediate position. As shown in fig. 16 and 17, when the exhaust port is provided also at the center of the transport space, the flow of the exhaust gas of the purge gas is formed also in the vicinity of the center. Therefore, it is preferable to provide the exhaust port not only near the guide rail 55 but also near the center of the transport space.
Returning to fig. 11, the purge gas controller 65 controls the supply of the purge gas by the gas supply pipe 63. Examples of the supply control of the purge gas are opening and closing of the supply, adjustment of the flow rate, and the like. Further, the purge gas controller 65 controls the exhaust gas performed by the exhaust pipe 64. Examples of the exhaust control of the purge gas are opening and closing of the exhaust, adjustment of the flow rate, and the like. In order to realize the above-described air supply control and exhaust gas control, the purge gas controller 65 may include variable valves, flow meters, and the like provided to the air supply pipe 63 and the exhaust pipe 64.
An example of the opening and closing control of the intake air and the exhaust air by the purge gas controller 65 will be described. The gas supply and gas exhaust are controlled to be off when the unprocessed substrate is carried into the load lock chamber 4 from the loader 8. The supply and exhaust of air is controlled to be on when the processed substrate is sent out from the load lock chamber 4 to the loader 8. Although not performed in the normal process, when the unprocessed substrate is sent out from the load lock chamber 4 to the loader 8 for any reason, the supply and exhaust of air are controlled to be off. At the time of startup (idle state) of the substrate processing apparatus 1, the gas supply and gas exhaust are controlled to be on. When the substrate processing apparatus 1 is not started up (stopped state), the gas supply and gas exhaust are controlled to be off. In the case where the supply and/or exhaust of the purge gas does not work normally, the supply and exhaust are controlled to be closed. The air supply control and the exhaust control by the purge gas controller 65 may be performed under the control of the control unit 7 (fig. 1). The control unit 7 may perform control for issuing an alarm when the supply and/or exhaust of the purge gas by the purge gas controller 65 does not operate normally (for example, when the flow rate is reduced).
Among the operations of the substrate processing apparatus 1 described above, the operation when the substrate G is sent out from the load lock chamber 4 to the loader 8 will be described with reference to fig. 18.
Fig. 18 is a flowchart showing an example of a process (substrate carrying method) performed in the substrate processing apparatus. Each process is performed under the control of the control section 7, except for the case specifically described. Initially, the substrate G is in a pre-processing state and is in the process chamber 2.
In step S1, substrate processing is performed. That is, in the process chamber 2, the process of the substrate G using the process gas (for example, chlorine-based gas) is performed. The processing gas remaining without being consumed in the process is deposited on the substrate G.
In step S2, the load lock chamber is controlled to a reduced pressure environment. That is, the load lock chamber 4 is controlled to a reduced pressure environment compared to the atmospheric pressure. Further, the reduced pressure atmosphere may be continuously maintained from the time when the unprocessed substrate G is transferred from the load lock chamber 4 to the processing chamber 2.
In step S3, the purge gas is ejected and exhausted. That is, the purge gas is supplied to the nozzle 61 through the gas supply pipe 63 and is discharged to the guide rail 55U and the guide rail 55L. Accordingly, the conveyance space is exhausted through the exhaust ports 641U to 646U, 641L to 646L, and the exhaust pipe 64.
In step S4, the substrate G is sent out. That is, as shown in step S3, the substrate G is sent out from the processing chamber 2 to the loader 8 through the transfer chamber 3 and the load lock chamber 4 while the purge gas is ejected and exhausted. At this time, the substrate G transferred from the transfer chamber 3 to the load lock chamber 4 stays in the load lock chamber 4 once, and after the load lock chamber 4 is pressurized to the atmospheric pressure, the gate 5 is opened to send out the substrate G to the loader 8. The ejection and exhaust of the purge gas may be started in parallel with the transfer of the substrate G from the processing chamber 2 to the transfer chamber 3, or may be started after the substrate G is transferred to the transfer chamber 3 until the gate 5 is opened.
In the above process, when the substrate G is sent out from the load lock chamber 4 to the loader 8, the transport space is exhausted together with the ejection of the purge gas (steps S3 and S4). Therefore, as described above, it is possible to suppress deterioration of the structure (for example, the guide rail 55) due to adhesion of the process gas to the structure provided in the opening 42.
The embodiments described above are to be considered in all respects as illustrative and not restrictive. The above-described embodiments can be embodied in various ways. The above-described embodiments may be omitted, replaced, or changed in various ways without departing from the scope and spirit of the appended claims.
In the above-described embodiment, an example in which the upper conveyance space on the upper side is exhausted from above is described. However, the upper transport space may be exhausted from below. In this case, the exhaust port is provided below the upper conveyance space. Further, the upper transport space may be exhausted from both the upper side and the lower side. In this case, the exhaust ports are provided above and below in the upper conveying space.
In the above-described embodiment, the example in which the lower side conveyance space is exhausted from below has been described. However, the lower transport space may be exhausted from above. In this case, the exhaust port is provided above the lower transport space. Further, the lower transport space may be exhausted from both the upper side and the lower side. In this case, for example, the exhaust ports are provided above and below in the lower conveyance space.
For example, when the process gas exhausted together with the purge gas is lighter than air, the gas is likely to move upward in the upper and lower conveyance spaces, and therefore, the possibility of efficiently ejecting the gas is improved in the upper exhaust system as compared with the lower exhaust system. In the case where the process gas exhausted together with the purge gas is heavier than air (for example, in the case of a chlorine-based gas), the gas easily moves to the lower side of the upper and lower transport spaces, and therefore, the possibility of efficiently ejecting the gas is improved in the lower exhaust system as compared with the upper exhaust system. Referring to fig. 19, an example in which the upper transport space is also evacuated downward will be described.
Fig. 19 is a view (half sectional view) showing an example of the schematic configuration of the load lock chamber 4, the shutter 5, the nozzle 61, and the exhaust pipe 64A. The load lock panel 6 is omitted except for the nozzle 61 and the exhaust pipe 64A. The exhaust pipe 64A as an exhaust flow path includes an exhaust pipe 64UA and an exhaust pipe 64 LA. The exhaust pipe 64UA is connected to a plurality of exhaust ports through an edge portion of the partition wall 56 of the shutter 5. An exhaust port 646UA and an exhaust port 645UA among the plurality of exhaust ports are illustrated. The exhaust port provided in the partition wall 56 is provided below the upper transport space, and exhausts the upper transport space from below. Similarly to the exhaust pipe 64L, the exhaust pipe 64LA is connected to a lower exhaust port in the lower transport space, and thus exhausts the lower transport space from below.
In the above embodiment, the description has been given of an example in which elements related to the ejection and exhaust of the purge gas, for example, the nozzle 61, the exhaust port 641U, and the like are incorporated in the load lock panel 6. However, the present invention is not limited to this embodiment, and the elements related to the ejection of the purge gas and the exhaust may be provided in any manner in the substrate processing apparatus 1.
In the above embodiment, the example in which the process chamber 2 is 3 process chambers, i.e., the process chamber 21 to the process chamber 23, has been described. However, the process chamber 2 may be one process chamber, and may be 2 or 4 or more process chambers.
In the above embodiment, the example in which the substrate carrying-in/out module is the load lock chamber 4 is described. However, all modules capable of carrying in and out the substrate G in the substrate processing apparatus 1 except for the load lock chamber 4 may be used as the substrate carry-in and carry-out module.
The substrate processing apparatus 1 described above is determined as follows, for example. As described with reference to fig. 1 to 17, etc., the substrate processing apparatus 1 includes a substrate carrying-in/out module (e.g., load lock chamber 4), an opening 42, a shutter 5, a discharge portion (e.g., nozzle 61), and an exhaust port (exhaust port 641U, etc.). The substrate carrying-in/out module has an internal space S, and when carrying out the substrate G to an external space (for example, the loader 8) controlled to have a positive pressure compared with the atmospheric pressure, the internal space S is controlled to have an atmospheric pressure environment and the substrate G passes through. The opening 42 is provided in the substrate carry-in/out module and communicates the internal space S with the external space. The shutter 5 is provided to the opening 42 and has a conveyance space. The ejection portion ejects the purge gas from the outside space side to the edge of the opening 42. The exhaust port (641U, etc.) exhausts the conveyance space through a path different from the opening 42.
According to the substrate processing apparatus 1, the purge gas is ejected from the outer space side of the opening 42 toward the edge of the opening 42. Further, the transport space is exhausted through a path different from the opening 42. This can suppress adhesion of the process gas adhering to the substrate G to the structure provided at the edge of the opening 42 when the substrate G is sent out. Therefore, deterioration of the structure provided in the opening 42 can be suppressed.
As described with reference to fig. 11 and the like, a plurality of exhaust ports (the exhaust port 641U to the exhaust port 646U, the exhaust port 641L to the exhaust port 646L, and the like) may be provided along the edge portion 422U and the edge portion 422L of the opening 42. This makes it easy to exhaust the entire conveyance space.
As described with reference to fig. 11 and the like, the exhaust port may have a central axis direction (for example, a central axis direction in the Z-axis direction) intersecting with the opening central axis direction (Y-axis direction) of the opening portion 42. For example, in this way, the transport space can be exhausted in a direction different from the opening 42.
As described with reference to fig. 11, 19, and the like, the exhaust port may include an exhaust port (the exhaust port 641L and the like, the exhaust port 646UA and the like) provided below the conveyance space. By exhausting the air downward from the conveyance space, the gas heavier than air can be efficiently discharged.
As described with reference to fig. 2, 3, 6, 11, and the like, the internal space S may include an upper internal space (internal space SU) and a lower internal space (internal space SL), the conveyance space may include an upper conveyance space communicating with the upper internal space and a lower conveyance space communicating with the lower internal space, and the exhaust port may be provided in each of the upper conveyance space and the lower conveyance space (the exhaust port 641U and the like and the exhaust port 641L and the like). This allows the air to be exhausted from either the upper conveyance space or the lower conveyance space.
As described with reference to fig. 10 and the like, the ejection part may be a shower plate. This makes it easy to adjust the ejection range of the purge gas, for example.
As described with reference to fig. 3, 4, 6, 7, and the like, the shutter 5 may include: a valve body 52U and the like that move along the edge 421U and the like of the opening 42; and a guide rail 55 for guiding the moving direction of the valve body 52U and the like, and the ejection portion ejects the purge gas to the guide rail 55. The substrate processing apparatus 1 may also include a processing chamber 2 that processes the substrate G using a processing gas (for example, a processing gas containing chlorine atoms) that can corrode the guide 55. This can suppress corrosion of the guide rail 55.
The substrate carrying method described with reference to fig. 18 is also an embodiment of the present invention. Namely, the substrate conveying method includes: in the substrate processing apparatus 1, step S3 is performed in which the purge gas is ejected from the outer space side (loader 8 side) of the opening 42 toward the edge of the opening 42 and the transport space is exhausted through a path different from the opening 42. According to this substrate conveying method, as described above, deterioration of the structure provided in the opening 42 can be suppressed.

Claims (11)

1. A substrate processing apparatus, comprising:
a substrate carry-in-and-out module having an internal space through which a substrate passes, the internal space being controlled to be an atmospheric pressure environment when the substrate is carried out to an external space controlled to be a positive pressure compared with an atmospheric pressure;
an opening provided in the substrate carry-in/out module and communicating the internal space with the external space;
a gate provided to the opening and having a conveyance space;
a discharge portion that discharges a purge gas from the external space side to an edge portion of the opening portion; and
and an exhaust port for exhausting the transport space through a path different from the opening.
2. The substrate processing apparatus according to claim 1, wherein:
the plurality of exhaust ports are provided along an edge portion of the opening portion.
3. The substrate processing apparatus according to claim 1 or 2, wherein:
the exhaust port has a central axis direction intersecting with an opening central axis direction of the opening portion.
4. The substrate processing apparatus according to any one of claims 1 to 3, wherein:
the exhaust port includes an exhaust port disposed below the conveyance space.
5. The substrate processing apparatus according to any one of claims 1 to 4, wherein:
the inner space includes an upper side inner space and a lower side inner space,
the conveyance space includes an upper conveyance space communicating with the upper internal space and a lower conveyance space communicating with the lower internal space,
the exhaust port is provided in each of the upper side transport space and the lower side transport space.
6. The substrate processing apparatus according to any one of claims 1 to 5, wherein:
the ejection part is a shower plate.
7. The substrate processing apparatus according to any one of claims 1 to 6, wherein:
the substrate carry-in/out module is a load lock chamber capable of being coupled to a loader having the external space.
8. The substrate processing apparatus according to any one of claims 1 to 7, wherein:
the gate includes: a valve body movable along a 1 st edge extending in a 1 st direction among edges of the opening portion; and a guide rail for guiding the moving direction of the valve body,
the ejection portion ejects the purge gas to the guide rail.
9. The substrate processing apparatus according to claim 8, wherein:
comprising a process chamber for processing the substrate using a process gas capable of etching the guide rail.
10. The substrate processing apparatus according to claim 9, wherein:
the treatment gas contains chlorine atoms.
11. A substrate transport method characterized by:
the substrate processing apparatus includes:
a substrate carry-in-and-out module having an internal space through which a substrate passes, the internal space being controlled to be an atmospheric pressure environment when the substrate is carried out to an external space controlled to be a positive pressure compared with an atmospheric pressure;
an opening part which is provided in the substrate carry-in/out module and communicates the internal space with the external space; and
a gate provided to the opening and having a conveying space,
the substrate conveying method includes:
in the substrate processing apparatus, a purge gas is ejected from the outside space side to the edge of the opening from the opening, and the transport space is exhausted through a path different from the opening.
CN202110907202.4A 2020-08-19 2021-08-09 Substrate processing apparatus and substrate conveying method Pending CN114078729A (en)

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