JP5037058B2 - Intermediate transfer chamber, substrate processing system, and exhaust method for intermediate transfer chamber - Google Patents

Description

  The present invention relates to an intermediate transfer chamber, a substrate processing system, and an exhaust method for the intermediate transfer chamber, and more particularly to an intermediate transfer chamber that is evacuated during substrate transfer.

  A substrate processing system that performs plasma processing on a wafer as a substrate includes a process module that accommodates the wafer and performs plasma processing, a load / lock module as an intermediate transfer chamber that carries the wafer into the process module, and a plurality of wafers And a loader module for taking out the wafer from the container for storing the wafer and delivering it to the load / lock module.

  Usually, a load lock module of a substrate processing system receives a wafer under atmospheric pressure, evacuates the chamber to a predetermined pressure, opens a gate on the process module side, loads the wafer on the process module side, When the process is completed, the wafer is unloaded from the process module, the gate on the process module side is closed, the inside of the chamber is returned to atmospheric pressure, and the wafer is unloaded to the loader module (see, for example, Patent Document 1). ).

  When the load lock module is evacuated, particles are generated in the chamber, and these particles adhere to and accumulate on the wafer surface. In the wafer process, the particles become wafer defects, which are finally manufactured. There was a problem that the yield and reliability of the device to be used decreased.

As a generation mechanism of particles in the chamber at the time of vacuum evacuation, conventionally, a concept that particles adhering and depositing in the chamber are wound up at the time of vacuum evacuation and adhere to the wafer is the mainstream.
JP 2006-128578 A

  However, in addition to the particle generation mechanism described above, the moisture contained in the chamber solidifies due to a rapid temperature drop due to adiabatic expansion of the internal gas during evacuation and fine particles resulting from this adhere to the wafer. This phenomenon has also been confirmed. When the process is performed on the wafer to which the particles are adhered, for example, petal-shaped corrosion marks remain on the wafer, which becomes a defect of the wafer.

  It has been observed that the temperature of the internal gas during evacuation is reduced by several tens of degrees Celsius, although it largely depends on the type of gas, the chamber volume, the exhaust speed, and the like. If moisture is contained in the chamber, due to a rapid drop in gas temperature, moisture condenses from small particles to the core and grows into large particles, and depending on the temperature, it further solidifies into ice and adheres to the wafer. . This phenomenon of moisture condensation and coagulation is caused by the fact that various ions in the gas become condensation nuclei even when there are no core particles in the chamber, or water molecules agglomerate with each other and grow large. Can occur and cause serious problems.

  The objective of this invention is providing the intermediate | middle conveyance chamber which can prevent the defect of a board | substrate, a substrate processing system, and the exhaust method of the said intermediate conveyance chamber.

In order to achieve the above object, the intermediate transfer chamber according to claim 1 includes a first chamber in a first environment containing water at a first pressure and a second chamber in which the interior is lower than the first pressure. A transfer device provided between a second chamber in a second environment of pressure and having a support unit that transfers the substrate bidirectionally between the first chamber and the second chamber and supports the substrate. And an exhaust device that exhausts the intermediate transport chamber to reduce the internal pressure of the intermediate transport chamber from the first pressure to the second pressure, and when exhausting by the exhaust device. , and a conductance control device which controls the conductance of the gas directly above the substrate supported by the supporting portion, the conductance control device is a plate-like member provided in the main surface facing the substrate, and , the flat member is not provided with heating means, the exhaust Device as condensation or condensation of moisture on the main surface of the substrate without heating the substrate with the flat plate-like member when the exhaust does not occur due to the main surface of the substrate and the distance between the flat member By controlling, the conductance of the gas immediately above the substrate is controlled.

Intermediate chamber according to claim 2, wherein, in the intermediate conveying chamber according to claim 1 Symbol placement, the exhaust system of the intermediate transfer chamber at the maximum pumping speed condensation or condensation of moisture on the main surface of the substrate does not occur It is characterized by exhausting.

Intermediate chamber according to claim 3, wherein, in the intermediate conveying chamber according to claim 2, further comprising a water quantity measuring device for measuring the water content of the intermediate transfer chamber, the measurement of the exhaust system the water content measuring device Based on the result, exhaust in the intermediate transfer chamber is performed.

The intermediate transfer chamber according to claim 4 is the intermediate transfer chamber according to claim 2 or 3 , further comprising a moisture detection device that detects condensed or condensed moisture in the intermediate transfer chamber, and the exhaust device includes the moisture detection device. Exhaust in the intermediate transfer chamber is performed based on the detection result of the apparatus.

The intermediate transfer chamber according to claim 5 is the intermediate transfer chamber according to any one of claims 1 to 4 , further comprising a dry gas supply device that supplies dry gas into the intermediate transfer chamber. And

The intermediate transfer chamber according to claim 6 is the intermediate transfer chamber according to any one of claims 1 to 5 , further comprising a heated gas supply device that supplies a gas heated to a predetermined temperature into the intermediate transfer chamber. It is characterized by providing.

Intermediate chamber according to claim 7, wherein, in the intermediate conveying chamber according to any one of claims 1 to 6, further an intermediate transfer chamber to a pressure higher than the first pressure to said intermediate transfer chamber A pressurization gas supply device that supplies a gas to be boosted is provided.

The intermediate transfer chamber according to claim 8 is the intermediate transfer chamber according to any one of claims 1 to 7 , further supplying a gas for decomposing moisture contained in the intermediate transfer chamber into the intermediate transfer chamber. A moisture decomposition gas supply device is provided.

The intermediate transfer chamber according to claim 9 is the intermediate transfer chamber according to any one of claims 1 to 8 , further comprising a gas in the first chamber at a communication portion with the first chamber in the intermediate transfer chamber. Characterized in that it comprises a shut-off gas jetting means for jetting a gas that shuts out the intrusion into the intermediate transfer chamber.

The intermediate transfer chamber according to claim 10 is the intermediate transfer chamber according to any one of claims 1 to 9 , further comprising cooling means for cooling at least a part of the intermediate transfer chamber and the inner wall. And

Intermediate chamber according to claim 11, wherein, in the intermediate conveying chamber according to any one of claims 1 to 10, wherein the first chamber, characterized in that dry gas is supplied.

In order to achieve the above object, a substrate processing system according to claim 12 , a substrate processing apparatus for processing a substrate as the second chamber, a substrate transfer apparatus for transferring the substrate as the first chamber , An intermediate transfer chamber according to any one of claims 1 to 11 is provided.

In order to achieve the above object, the method for exhausting the intermediate transfer chamber according to claim 13 is characterized in that the first chamber is in a first environment containing moisture at a first pressure and the interior is lower than the first pressure. A support unit provided between the second chamber in the second environment of the second pressure and configured to transport the substrate bidirectionally between the first chamber and the second chamber and support the substrate; An exhaust method for exhausting the intermediate transport chamber having the transport device, the exhaust step for exhausting the intermediate transport chamber to reduce the internal pressure of the intermediate transport chamber from the first pressure to the second pressure, A conductance control step for controlling the conductance of the gas immediately above the substrate supported by the support portion when evacuating by the step, and in the conductance control step, a flat plate member not provided with heating means is attached to the substrate. To face the main surface Arrangement, and without heating the substrate with the flat member, such condensation or condensation of moisture on the main surface of the substrate does not occur, to control the spacing of the main surface of the substrate and the flat plate-like member Thus, the conductance of the gas immediately above the substrate is controlled.

According to the exhaust method of the intermediate transfer chamber according to claim 1 and the intermediate transfer chamber according to claim 13, the conductance of the gas immediately above the substrate supported by the support portion is controlled when the intermediate transfer chamber is exhausted. The gas flow immediately above the substrate can be made gentle. As a result, it is possible to suppress the adiabatic expansion of gas immediately above the substrate, can be particles due to adiabatic expansion is prevented from adhering, with, it is possible to prevent defects of the substrate.

According to the intermediate transfer chamber of claim 1 and the exhaust method of the intermediate transfer chamber of claim 13,
Since a plate-like member not provided with a heating means is provided opposite to the main surface of the substrate, the conductance of the gas immediately above the substrate can be accurately controlled, and the gas flow directly above the substrate is surely moderated. be able to. In addition, when exhausting in the intermediate transfer chamber, moisture in the intermediate transfer chamber other than the gas immediately above the substrate is solidified by adiabatic expansion, but a plate-like member is provided directly above the substrate. The shaped member serves as a cover for the substrate. Therefore, it is possible to reliably prevent the particles due to the adiabatic expansion of the internal gas from adhering to the substrate.

Furthermore, an intermediate transfer chamber according to claim 1, according to the exhaust method of the intermediate conveyance chamber according to claim 13, wherein, when the evacuation of the intermediate transfer chamber, so that condensation or condensation of moisture on the main surface of the substrate does not occur In addition, since the conductance on the main surface is controlled, it is possible to appropriately prevent the particles due to the adiabatic expansion of the internal gas from adhering to the substrate.

According to the intermediate transfer chamber of the second aspect, since the exhaust in the intermediate transfer chamber is performed at the maximum exhaust speed at which moisture condensation or condensation on the main surface of the substrate does not occur, the particles caused by the adiabatic expansion of the internal gas While suppressing the generation, it is possible to efficiently reduce the pressure of the gas in the intermediate transfer chamber, and thus it is possible to appropriately prevent the solidification of moisture in the gas due to the adiabatic expansion of the internal gas.

According to the intermediate transfer chamber of the third aspect, the moisture amount in the intermediate transfer chamber is measured and the intermediate transfer chamber is evacuated based on the measurement result of the moisture amount. Thus, it is possible to appropriately prevent moisture from solidifying in the intermediate transfer chamber.

According to the intermediate transfer chamber of claim 4, the condensed or condensed water in the intermediate transfer chamber is detected, and the intermediate transfer chamber is exhausted based on the detection result of the water. The exhaust speed can be appropriately changed according to the detection result, so that further solidification of moisture in the intermediate transfer chamber can be appropriately prevented.

According to the intermediate transfer chamber of the fifth aspect , since the dried gas is supplied into the intermediate transfer chamber, the gas in the intermediate transfer chamber can be replaced with the dry gas from the moisture-containing gas. Therefore, it is possible to suppress moisture from being contained in the gas in the intermediate transfer chamber, so that moisture in the gas can be prevented from solidifying due to adiabatic expansion.

According to the intermediate transfer chamber of the sixth aspect, since the gas heated to a predetermined temperature is supplied into the intermediate transfer chamber, the water adhering to the inner wall of the intermediate transfer chamber and the surface of the substrate can be evaporated. As a result, it is possible to remove moisture contained in the gas in the intermediate transfer chamber, thereby eliminating the moisture contained in the gas in the intermediate transfer chamber from solidifying due to adiabatic expansion. In addition, it is possible to prevent the temperature of the gas in the intermediate transfer chamber from being lowered to the freezing point of moisture due to adiabatic expansion during exhaust in the intermediate transfer chamber. Therefore, the moisture contained in the gas does not solidify. Furthermore, the temperature of the gas in the intermediate transfer chamber can be made higher than the temperature of the atmosphere containing moisture. As a result, the atmosphere containing moisture entering the intermediate transfer chamber can flow into the lower portion of the intermediate transfer chamber, and the atmosphere containing moisture can be prevented from flowing upward above the substrate. Therefore, it is possible to prevent moisture from solidifying above the substrate.

According to the intermediate transfer chamber of the seventh aspect, the gas for raising the pressure in the intermediate transfer chamber to a pressure higher than the first pressure is supplied to the intermediate transfer chamber. It can be higher than the pressure. As a result, it is possible to prevent the moisture-containing air from flowing into the intermediate transfer chamber, and thus it is possible to prevent the moisture-containing air from being supplied into the intermediate transfer chamber.

According to the intermediate transfer chamber of the eighth aspect, since the gas for decomposing the moisture contained in the intermediate transfer chamber is supplied into the intermediate transfer chamber, the moisture contained in the gas in the intermediate transfer chamber can be decomposed. As a result, it is possible to prevent moisture from being present in the gas in the intermediate transfer chamber, and thus to prevent the moisture in the gas from solidifying due to adiabatic expansion.

According to the intermediate transfer chamber according to claim 9, since discharges gas to block the entry of the communication portion between the first chamber in the intermediate chamber to the intermediate conveying chamber of the first chamber of a gas, the atmosphere containing moisture Intrusion into the intermediate transfer chamber can be blocked. Therefore, it is possible to prevent the atmosphere containing moisture from being supplied into the intermediate transfer chamber.

According to the intermediate transfer chamber of claim 10, since at least a part of the intermediate transfer chamber and the inner wall is cooled, the moisture in the gas in the intermediate transfer chamber is solidified, and the ratio of the moisture in the gas can be reduced. Therefore, it is possible to prevent moisture in the gas from solidifying due to adiabatic expansion.

According to the intermediate transfer chamber of the eleventh aspect , since the dried gas is supplied into the first chamber, the gas in the first chamber can be replaced with dry gas from the atmosphere containing moisture. As a result, it is possible to prevent the moisture-containing atmosphere from flowing into the intermediate transfer chamber from the first chamber, and it is therefore possible to prevent the moisture-containing atmosphere from being supplied into the intermediate transfer chamber.

According to the substrate processing system of the twelfth aspect, since the intermediate transfer chamber according to any one of the first to eleventh aspects is provided, defects of the substrate can be prevented.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  First, a substrate processing system according to an embodiment of the present invention will be described.

  FIG. 1 is a cross-sectional view showing a schematic configuration of a substrate processing system according to an embodiment of the present invention.

  In FIG. 1, a substrate processing system 1 is a process module (Process Module) that performs plasma processing such as RIE (Reactive Ion Etching) processing and ashing processing on a semiconductor wafer (hereinafter simply referred to as “wafer”) W as a substrate. (Hereinafter referred to as “P / M”) 2, an atmospheric transfer device 3 that takes out the wafer W from a FOUP (Front Opening Unified Pod) 5 as a container for containing the wafer W, and the atmospheric transfer device 3 and the P / M Load-Lock Module (Load-Lock Module) as an intermediate transfer chamber which is arranged between M2 and carries wafer W to / from P / M2 from the atmospheric transfer device 3 or from the P / M2 to the atmospheric transfer device 3. (Hereinafter referred to as “LL / M”) 4.

  The insides of P / M2 and LL / M4 are configured to be evacuated, and the inside of the atmospheric transfer device 3 is always maintained at atmospheric pressure. Further, P / M2 and LL / M4, and LL / M4 and the atmospheric transfer device 3 are connected by gate valves 6 and 7, respectively. The gate valves 6 and 7 are openable and closable, and communicate or block between P / M2 and LL / M4 and between LL / M4 and the atmospheric transfer device 3.

  The atmospheric transfer device 3 includes a hoop mounting table 50 on which the hoop 5 is mounted, a loader module (hereinafter referred to as “L / M”) 51 (first chamber), and the L / M 51. And a gas supply system 60 for supplying gas.

  The hoop mounting table 50 is a trapezoid whose upper surface has a flat surface, and the hoop 5 stores, for example, 25 wafers W placed in multiple stages at an equal pitch. The L / M 51 is a rectangular parallelepiped box-like object, and has a scalar type transfer arm 52 that transfers the wafer W therein.

  Further, a hoop opener (not shown) is provided on the side surface of the L / M 51 on the side of the hoop mounting table 50 so as to face the hoop 5 mounted on the hoop mounting table 50. The hoop opener opens the front door of the hoop 5 so that the hoop 5 communicates with the inside of the L / M 51.

  The transfer arm 52 includes an articulated transfer arm arm portion 53 configured to bend and stretch, and a pick 54 attached to the tip of the transfer arm arm portion 53. It is comprised so that it may mount. The transfer arm 52 has an articulated arm-like mapping arm 55 configured to be able to bend and stretch. For example, a laser beam is emitted to the tip of the mapping arm 55 to check the presence or absence of the wafer W. A mapping sensor (not shown) is arranged. The base ends of the transfer arm arm portion 53 and the mapping arm 55 are connected to a lift 58 that moves up and down along an arm base end support column 57 erected from the base portion 56 of the transfer arm 52. The arm base end support column 57 is configured to be turnable. In the mapping operation performed for recognizing the position and number of the wafers W accommodated in the hoop 5, the mapping arm 55 is lifted or lowered while the mapping arm 55 is extended, whereby the wafer in the hoop 5. Check the position and number of W.

  Since the transfer arm 52 can be bent by the transfer arm arm portion 53 and can be turned by the arm base end support column 57, the wafer W placed on the pick 54 can be freely placed between the hoop 5 and the LL / M4. Can be transported.

The gas supply system 60 includes a gas introduction pipe 61 penetrating from the outside of the L / M 51 into the L / M 51, and a gas supply device (not shown) connected to the L / M 51 outside tip of the gas introduction pipe 61. The gas introduction pipe 61 has a control valve 63 disposed between the L / M 51 and the gas supply device. In the present embodiment, the gas supply system 60 supplies a dry gas such as N ₂ gas or dry air into the L / M 51 to reduce the amount of water in the L / M 51.

  The LL / M4 is provided with a transfer arm 70 (conveying device) which can be bent and stretched and pivoted, and a plate provided opposite to a wafer mounting surface of a pick 74 (to be described later) of the transfer arm 70. A chamber 71 having a cylindrical member 90 (conductance control device), a gas supply system 72 for supplying gas into the chamber 71, and an LL / M exhaust system 73 (exhaust device) for exhausting the chamber 71.

  The transfer arm 70 is a SCARA-type transfer arm composed of a plurality of arm portions, and has a pick 74 (support portion) attached to the tip thereof. The pick 74 is configured to directly place the wafer W thereon. The shape of the pick 74 is substantially the same as the shape of the pick 54 described above.

  When the wafer W is carried into the P / M 2 from the atmospheric transfer device 3, when the gate valve 7 is opened, the transfer arm 70 receives the wafer W from the transfer arm 52 in the L / M 51, and the gate valve 6 When opened, the transfer arm 70 enters the P / M2 chamber 10 (second chamber) and places the wafer W on the upper end of a pusher pin (not shown) protruding from the upper surface of the mounting table 12. When the wafer W is transferred from the P / M 2 to the atmospheric transfer device 3, the transfer arm 70 enters the P / M 2 chamber 10 when the gate valve 6 is opened, and the upper surface of the mounting table 12. The wafer W placed on the upper end of the pusher pin projecting from is received. When the gate valve 7 is opened, the transfer arm 70 delivers the wafer W to the transfer arm 52 in the L / M 51. The transfer arm 70 is not limited to the scalar type, and may be a frog leg type or a double arm type.

The gas supply system 72 includes a gas introduction pipe 75 penetrating from the outside of the chamber 71 to the inside of the chamber 71, a gas supply apparatus (not shown) connected to the front end of the gas introduction pipe 75 on the outside of the chamber 71, and a gas introduction pipe 75, a control valve 77 disposed between the chamber 71 and the gas supply device, a heating unit 76 disposed between the chamber 71 and the control valve 77 in the gas introduction pipe 75, and the interior of the chamber 71 of the gas introduction pipe 75. It has a gas supply port for ejecting gas arranged at the side tip. In the present embodiment, a pair of break filters 80 is provided at the tip of the gas supply port. In the present embodiment, the gas supply system 72 decomposes an inert gas, a dry gas such as N ₂ gas or dry air, a gas heated to a predetermined temperature or higher by the heating unit 76, or moisture described later in the chamber 71. Supply the gas. The break filter 80 is a porous ceramic filter whose length is set to 200 mm, for example.

  The LL / M exhaust system 73 includes an exhaust pipe 78 penetrating into the chamber 71 and a control valve 79 disposed in the middle of the exhaust pipe 78, and cooperates with the gas supply system 72 described above to form a chamber. The pressure inside 71 is controlled.

  Next, the vacuum evacuation process executed in LL / M4 in FIG. 1 will be described.

  As a transfer procedure of the wafer W when the vacuum evacuation process is performed, first, the wafer W accommodated in the FOUP 5 is loaded into the LL / M4 chamber 71 under the atmospheric pressure by the transfer arm 52, and the gate valve 7 , The chamber 71 is evacuated by the LL / M exhaust system 73, and when the chamber 71 reaches a predetermined pressure, the gate valve 6 is opened and the transfer arm 70 moves the wafer W into the P / M 2 chamber 10. Transport.

  Conventionally, in the process of evacuation in the chamber 71 of the LL / M4 during the transfer of the wafer W, the gas in the chamber 71 is rapidly cooled by adiabatic expansion, and moisture contained in the gas in the chamber 71 is solidified. There has been a problem that fine particles resulting from this adhere to the wafer W.

  In the present embodiment, as shown in FIG. 2, a plate-like member 90 is provided directly above the wafer placement surface of the pick 74 of the transfer arm 70 and placed on the wafer placement surface of the pick 74. The conductance of the gas flow immediately above the wafer W is reduced. As a result, during the vacuum evacuation by the LL / M evacuation system 73, the flow of the gas immediately above the wafer W can be moderated, thereby preventing the moisture in the gas from solidifying due to the adiabatic expansion of the gas. be able to. Further, when the LL / M exhaust system 73 is evacuated, the gas in the chamber 71 other than the gas directly above the wafer W solidifies due to adiabatic expansion, and the moisture in the gas is solidified. Since the member 90 is provided, the plate-like member 90 serves as a cover for the wafer W, so that particles generated by the solidification of moisture in the gas do not adhere to the wafer W.

  It has been confirmed by the present inventor that the gas exhaust speed should be reduced to 3.8 l / sec in order to prevent the moisture in the gas from solidifying, and the wafer W corresponding to the exhaust speed is confirmed. The direct conductance is 46.3 l / sec. Here, the length of the chamber 71 along the gas flow direction (horizontal length in FIG. 2) is 379 mm, and the length along the direction perpendicular to the gas flow direction of the chamber 71 (depth in FIG. 2). If the length in the direction is 309 mm, the distance between the wafer W placed on the wafer placement surface of the pick 74 and the plate member 90 is set to 10.7 mm in order to realize the above-described conductance. It is good to do.

  According to the present embodiment, the plate-like member 90 that controls the conductance of the gas flow immediately above the wafer W placed on the wafer placement surface of the pick 74 makes the gas flow just above the wafer W gentle. Therefore, in the process of evacuation in the chamber 71 of the LL / M4, it is possible to prevent the particles due to the adiabatic expansion of the internal gas from adhering to the wafer W, thereby preventing defects in the wafer W. Can do.

  In the present embodiment, a plate-like member 90 is provided directly above the wafer mounting surface of the pick 74 to reduce the conductance immediately above the wafer W mounted on the wafer mounting surface of the pick 74. However, by lifting the wafer W placed on the wafer placement surface of the pick 74 without providing the plate-like member 90, the wafer is brought close to the ceiling in the chamber 71, and the conductance immediately above the wafer is increased. It may be small.

  Further, in the present embodiment, the evacuation speed of the vacuum exhaust in the chamber 71 by the LL / M exhaust system 73 may be controlled to perform the slow exhaust, thereby gradually reducing the pressure of the gas in the chamber 71. Therefore, it is possible to prevent the moisture in the gas from solidifying due to the adiabatic expansion of the gas.

  Further, in the present embodiment, as shown in FIG. 3A, a hygrometer 91 is provided in the chamber 71, the moisture content in the chamber 71 is measured using the hygrometer 91, and based on the measurement result. The evacuation speed of the vacuum exhaust in the chamber 71 by the LL / M exhaust system 73 may be dynamically controlled, whereby the exhaust speed can be appropriately changed according to the amount of water in the chamber 71, The moisture in the chamber 71 can be appropriately prevented from solidifying.

  Further, in this embodiment, as shown in FIG. 3A, a particle monitor 92a is provided in the chamber 71, and particles generated due to adiabatic expansion of gas in the chamber 71 are detected using the particle monitor 92a. The evacuation speed of the vacuum exhaust in the chamber 71 by the LL / M exhaust system 73 may be dynamically controlled based on the detection result, and according to the detection result of the particles generated in the chamber 71. Thus, it is possible to appropriately change the exhaust speed, and thus it is possible to appropriately prevent the moisture in the chamber 71 from solidifying. In the present embodiment, as shown in FIG. 3A, a particle monitor 92b is provided in the exhaust line of the LL / M exhaust system 73 in the chamber 71 to detect exhaust particles, and according to the detection result of the exhaust particles. Thus, the exhaust speed of the vacuum exhaust in the chamber 71 by the LL / M exhaust system 73 may be dynamically controlled. The particle monitors 92a and 92b detect particles using a laser light scattering method or the like.

  Further, in the present embodiment, as shown in FIG. 3B, a cooling device 93 including a cooling body or the like in contact with the gas in the chamber 71 is provided in the chamber 71, The moisture may be solidified by the cooling device 93 and the ratio of the moisture in the gas may be reduced. As a result, when the chamber 71 is evacuated by the LL / M exhaust system 73, The proportion of moisture contained in the gas can be reduced, and moisture in the gas can be prevented from solidifying due to adiabatic expansion. In the present embodiment, the cooling device 93 is provided in the chamber 71 to reduce the ratio of moisture in the gas in the chamber 71. However, at least one of the inside of the chamber 71 and the inner wall is not provided without providing the cooling device 93. The proportion of moisture in the gas in the chamber 71 may be reduced by cooling the part to a temperature at which moisture solidifies.

  Further, in the present embodiment, as shown in FIG. 3C, a gas ejection system 94 is provided at the communication portion of the chamber 71 with the gate valve 7, and when the gate valve 7 is opened by the gas ejection system 94, L In order to block the atmosphere containing moisture in the / M51 from entering the chamber 71, a gas in the form of a curtain may be ejected in the vicinity of the gate valve 7 so that the chamber 71 can enter the chamber 71 from within the L / M51. Invasion of the atmosphere containing moisture can be prevented, so that the atmosphere containing moisture can be prevented from being supplied into the chamber 71.

Further, in the present embodiment, as shown in FIG. 4A, a dry gas such as N ₂ gas or dry air is supplied into the chamber 71 by the gas supply system 72, and the gas in the chamber 71 contains moisture. The gas may be replaced with the dry gas, and thereby, when the inside of the chamber 71 is evacuated by the LL / M exhaust system 73, the moisture in the gas in the chamber 71 can be suppressed. The moisture in the gas can be prevented from solidifying due to adiabatic expansion.

  Further, in this embodiment, as shown in FIG. 4A, a gas supply system 72 supplies a gas for decomposing moisture into the chamber 71, and decomposes moisture contained in the gas in the chamber 71. As a result, when the inside of the chamber 71 is evacuated by the LL / M exhaust system 73, it is possible to prevent the presence of moisture in the gas in the chamber 71, and the moisture in the gas is adiabatically expanded. It is possible to eliminate coagulation. The gas supply method for decomposing moisture is arbitrary, but is not limited to monotonous supply. For example, it is supplied by pulsing to efficiently decompose moisture, or by supplying pressure while fluctuating the pressure. May be. Thereby, mixing of the gas which decomposes | disassembles a water | moisture content and the gas containing a water | moisture content is accelerated | stimulated, and a water | moisture content can be decomposed | disassembled more efficiently.

  Gases for decomposing moisture are oxyhalogens and the like, for example, methylsilane compounds, dichloropropane, dibromopropane, nitrosyl chloride, carbosyl chloride, carbosyl fluoride, siborane, chlorine, fluorine, thionyl bromide, iodomethylpropane, Acetyl chloride, acetone diacyl acetal, carbon monoxide. Examples of the methylsilane compound include trimethylchlorosilane, dimethyldichlorosilane, monomethyltrichlorosilane, and tetrachlorosilane.

  In this embodiment, as shown in FIG. 4B, a gas heated to 100 ° C. or higher is supplied into the chamber 71 by the gas supply system 72 and adhered to the inner wall of the chamber 71 and the surface of the wafer W. The moisture may be evaporated, whereby the moisture contained in the gas in the chamber 71 can be removed. When the inside of the chamber 71 is evacuated by the LL / M exhaust system 73, the inside of the chamber 71 is removed. The moisture contained in the gas can be prevented from solidifying due to adiabatic expansion.

  Further, in order to prevent the gas temperature in the chamber 71 from being lowered to the moisture freezing point due to adiabatic expansion when the gas supply system 72 evacuates the chamber 71 by the LL / M exhaust system 73. A gas heated to a predetermined temperature or higher may be supplied. As a result, the gas in the chamber 71 does not decrease to the freezing point of water due to adiabatic expansion, so that the water contained in the gas is solidified. There is nothing. Further, since the gas heated to a predetermined temperature or higher is supplied into the chamber 71 as described above, the temperature of the gas in the chamber 71 can be made higher than the temperature of the atmosphere containing moisture in the L / M 51. Thereby, when the gate valve 7 is opened, the atmosphere containing moisture flowing into the chamber 71 from the L / M 51 can be caused to flow into the lower portion of the chamber 71, and the atmosphere containing moisture enters the wafer mounting surface of the pick 74. It is possible to prevent the wafer W from going around the wafer W placed thereon. Therefore, it is possible to prevent moisture from solidifying above the wafer W.

  Further, in the present embodiment, as shown in FIG. 4C, a dry gas is supplied into the chamber 71 by the gas supply system 72, and the pressure of the gas in the chamber 71 is changed to an atmosphere containing moisture in the L / M 51. Therefore, when the gate valve 7 is opened, the atmosphere containing moisture in the L / M 51 can be prevented from flowing into the chamber 71, so that moisture in the chamber 71 can be prevented. It is possible to prevent the supply of atmospheric air.

Further, in the present embodiment, as shown in FIG. 1, a dry gas such as N ₂ gas or dry air is supplied into the L / M 51 by the gas supply system 60, and the gas in the L / M 51 contains the moisture. To the dry gas. As a result, when the gate valve 7 is opened, it is possible to prevent the atmosphere containing moisture from flowing into the chamber 71 of the LL / M4, so that the atmosphere containing moisture can be supplied into the chamber 71. Can be prevented. Further, the same effect can be obtained by supplying the gas for decomposing the moisture into the L / M 51 by the gas supply system 60 and decomposing the moisture contained in the atmosphere in the L / M 51.

It is sectional drawing which shows schematic structure of the substrate processing system which concerns on the 1st Embodiment of this invention. It is a figure explaining the evacuation process performed in LL / M in FIG. It is a figure which shows the modification of the evacuation process of FIG. 2, (A) is a case where exhaust_gas | exhaustion speed is controlled, (B) is a case where a cooling device is provided, (C) is a gas of curtain-like flow. It is a case of erupting. It is a figure which shows the modification of the evacuation process of FIG. 2, (A) is a case where dry gas etc. are supplied, (B) is a case where heated gas is supplied, (C) is in a chamber. This is when the pressure is increased.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Substrate processing system 2 Process module 3 Atmospheric transfer device 4 Load lock module 51 Loader module 60, 72 Gas supply system 70 Transfer arm 73 LL / M exhaust system 74 Pick 90 Plate-like member

Claims (13)

The first chamber is provided between a first chamber in a first environment containing moisture at a first pressure and a second chamber in a second environment having a second pressure lower than the first pressure. In the intermediate transfer chamber provided with a transfer device having a support part for transferring the substrate bidirectionally between the first chamber and the second chamber and supporting the substrate,
An exhaust device for exhausting the intermediate transfer chamber to reduce the internal pressure of the intermediate transfer chamber from the first pressure to the second pressure;
A conductance control device for controlling the conductance of the gas immediately above the substrate supported by the support portion when exhausting by the exhaust device;
The conductance controller is a plate member provided in the main surface facing the substrate, and the plate-like member is not provided with a heating means, by the plate member at the time of the exhaust gas by the exhaust device By controlling the distance between the main surface of the substrate and the flat plate member so as not to cause condensation or condensation of moisture on the main surface of the substrate without heating the substrate , An intermediate transfer chamber characterized by controlling conductance. The exhaust system intermediate chamber according to claim 1 Symbol placement and performing maximum exhaust of the intermediate transfer chamber at a pumping speed condensation or condensation of moisture on the main surface of the substrate does not occur. Furthermore, a water content measuring device for measuring the water content in the intermediate transfer chamber is provided,
3. The intermediate transfer chamber according to claim 2, wherein the exhaust device exhausts the intermediate transfer chamber based on a measurement result of the moisture amount measuring device. Furthermore, a moisture detection device for detecting condensed or condensed moisture in the intermediate transfer chamber is provided,
The exhaust system intermediate chamber according to claim 2 or 3, wherein the performing evacuation of the intermediate transfer chamber on the basis of the detection result of the moisture detection device. The intermediate transfer chamber according to any one of claims 1 to 4 , further comprising a dry gas supply device for supplying a dry gas into the intermediate transfer chamber. Further, an intermediate transfer chamber according to any one of claims 1 to 5, characterized in that it comprises a heating gas supply apparatus for supplying the heated on the intermediate transfer chamber to a predetermined temperature gas. The pressure rising gas supply device according to any one of claims 1 to 6 , further comprising a gas supply device for supplying a gas for increasing the pressure in the intermediate transfer chamber to a pressure higher than the first pressure. The intermediate transfer chamber described. The intermediate transfer chamber according to any one of claims 1 to 7 , further comprising a moisture decomposition gas supply device that supplies a gas for decomposing moisture contained in the intermediate transfer chamber into the intermediate transfer chamber. . Furthermore, the said intermediate conveyance chamber is provided with the interruption | blocking gas injection means which injects the gas which interrupts | blocks the penetration | invasion into the said intermediate conveyance chamber in the communication part with the said 1st chamber in the said intermediate conveyance chamber. The intermediate transfer chamber according to any one of 1 to 8 . Further, an intermediate transfer chamber according to any one of claims 1 to 9, characterized in that it comprises a cooling means for cooling at least a portion of the intermediate transfer chamber and the inner wall. The intermediate transfer chamber according to any one of claims 1 to 10 , wherein a dry gas is supplied into the first chamber. A substrate processing apparatus for processing a substrate as the second chamber, a substrate transfer apparatus for transferring the substrate as the first chamber, and the intermediate transfer chamber according to any one of claims 1 to 11. A substrate processing system comprising: The first chamber is provided between a first chamber in a first environment containing moisture at a first pressure and a second chamber in a second environment having a second pressure lower than the first pressure. In the exhaust method of the intermediate transfer chamber provided with a transfer device having a support part for transferring the substrate bidirectionally between the first chamber and the second chamber and supporting the substrate,
An exhaust step of exhausting the intermediate transfer chamber to reduce the internal pressure of the intermediate transfer chamber from the first pressure to the second pressure;
A conductance control step for controlling the conductance of the gas immediately above the substrate supported by the support portion during exhaust by the exhaust step;
In the conductance control step, a flat plate-like member not provided with a heating means is disposed so as to face the main surface of the substrate, and moisture is not formed on the main surface of the substrate without heating the substrate by the flat plate-like member. An exhaust method for an intermediate transfer chamber, wherein the conductance of gas immediately above the substrate is controlled by controlling the distance between the main surface of the substrate and the flat plate member so that condensation or condensation does not occur.

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