TWI421126B - Intermediate handling room and substrate processing system - Google Patents
Intermediate handling room and substrate processing system Download PDFInfo
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- TWI421126B TWI421126B TW096128005A TW96128005A TWI421126B TW I421126 B TWI421126 B TW I421126B TW 096128005 A TW096128005 A TW 096128005A TW 96128005 A TW96128005 A TW 96128005A TW I421126 B TWI421126 B TW I421126B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67769—Storage means
Description
本發明是關於中間搬運室及基板處理系統，尤其，關於基板搬運時進行真空排氣之中間搬運室。The present invention relates to an intermediate transfer chamber and a substrate processing system, and more particularly to an intermediate transfer chamber that performs vacuum evacuation during substrate transport.
對當作基板的晶圓施予電漿處理之基板處理系統中，具備有：收容晶圓來施予電漿處理之製程模組、及將晶圓搬入該製程模組的作為中間搬運室之負載鎖定模組(load-lock module)、及從收容複數片晶圓的容器中取出晶圓來與負載鎖定模組進行交接之裝載器模組。A substrate processing system for applying a plasma treatment to a wafer as a substrate includes: a process module for storing a wafer to be subjected to plasma processing; and an intermediate transfer chamber for loading the wafer into the process module A load-lock module and a loader module that takes a wafer from a container that holds a plurality of wafers to interface with a load lock module.
通常，基板處理系統中的負載鎖定模組具有的功能，係在大氣壓下投入晶圓，將腔體內真空排氣至特定的壓力為止之後，開啟製程模組側的閘門，將晶圓搬入製程模組側，製程結束的話，從製程模組中搬出晶圓，關閉製程模組側的閘門，腔體內回到大氣壓，將晶圓搬出製程模組(例如，參考日本專利文獻1)。Generally, the load lock module in the substrate processing system has the function of putting the wafer into the wafer under atmospheric pressure and then evacuating the cavity to a specific pressure, then opening the gate on the process module side and moving the wafer into the process mode. At the end of the process, when the process is completed, the wafer is removed from the process module, the gate on the process module side is closed, and the cavity is returned to the atmospheric pressure to carry the wafer out of the process module (for example, refer to Japanese Patent Laid-Open Publication No. 1).
以前所存在的問題，係當負載鎖定模組內進行真空排氣時，會在腔體內產生顆粒，該顆粒附著或堆積在晶圓表面，在晶圓製程中該顆粒會造成晶圓的缺陷，導致最後製造出來之裝置的良率或可靠度降低。The previous problem is that when the vacuum is exhausted in the load lock module, particles are generated in the cavity, and the particles adhere or accumulate on the surface of the wafer, and the particles may cause defects in the wafer during the wafer process. This results in a lower yield or reliability of the device that was last manufactured.
真空排氣時腔體內產生顆粒的結構，過去主流的想法是附著或堆積在腔體內的顆粒會在真空排氣時飄動，導致該顆粒附著在晶圓上。The structure of the particles is generated in the cavity during vacuum evacuation. The main idea in the past was that particles attached or accumulated in the cavity would flutter during vacuum evacuation, causing the particles to adhere to the wafer.
專利文獻1：日本專利特開2006-128578號公報Patent Document 1: Japanese Patent Laid-Open No. 2006-128578
然而，也確認了：與上述過顆粒的產生結構不同，含在腔體內的水分受到真空排氣時內部氣體的隔熱膨脹導致急遽的溫度下降而凝固，這個原因會使微細顆粒附著在晶圓上的現象，對附著了該顆粒的晶圓施予處理的話，例如花瓣形狀的腐蝕痕跡會殘存在晶圓上，這樣會造成晶圓的缺陷。However, it has also been confirmed that, unlike the above-described generation structure of the over-particles, the moisture contained in the cavity is subjected to vacuum expansion, and the thermal expansion of the internal gas causes the rapid temperature drop to solidify, which causes the fine particles to adhere to the wafer. In the above phenomenon, if the wafer to which the particles are attached is treated, for example, a petal-shaped corrosion trace may remain on the wafer, which may cause defects in the wafer.
真空排氣時內部氣體的溫度，雖大幅依存於氣體種類、腔體的容積、以及排氣速度等，但觀測到會降低數十℃程度。腔體內含有水分，則水分受到氣體溫度的急遽下降，而以較小的顆粒為核產凝結，成長成很大的顆粒，並且藉由溫度凝固成冰，該冰會附著在晶圓上。該水分凝結和凝固的現象，會導致即使在腔內沒有成為核的顆粒，氣體中的各種離子仍會變成凝結核、或內含有水分的話，會發生水分子相凝聚成長成很大等，而引起嚴重的問題。The temperature of the internal gas during vacuum evacuation is greatly dependent on the type of gas, the volume of the cavity, and the exhaust velocity, but it is observed to be reduced by several tens of degrees Celsius. When the cavity contains moisture, the moisture is drastically reduced by the temperature of the gas, and the smaller particles are condensed and condensed into large particles, and the ice is adhered to the wafer by solidification into ice. The phenomenon of coagulation and solidification of the water causes the particles of the gas to become condensation nuclei or contain water even if there are no particles that become nuclei in the cavity, and the water molecules will coagulate and grow into a large amount. Cause serious problems.
本發明的目的係提供可以防止基板的缺陷之中間搬運室、基板處理系統及該中間搬運室之排氣方法。An object of the present invention is to provide an intermediate transfer chamber, a substrate processing system, and an exhaust method of the intermediate transfer chamber, which can prevent defects of a substrate.
為了要達成上述目的，申請專利範圍第1項所述之中間搬運室，是一種具備有搬運裝置，該搬運裝置則是被設 置在內部處在第1壓力且含有水分的第1環境之第1室與內部處在小於第1壓力的第2壓力的第2環境之第2室之間，具有：在該第1室與第2室之間雙向地搬運基板且支撐該基板的支撐部之中間搬運室，其特徵為，具備有以下的裝置：將應把該中間搬運室的內部壓力從第1壓力減壓成第2壓力之該中間搬運室內予以排氣之排氣裝置、及該排氣裝置進行排氣時，控制前述基板的至少與前述支撐部相反側的主面上之排氣的氣體傳導度之氣體傳導度控制裝置，前述排氣裝置係以前述基板的主面上不會發生水分的凝結或凝縮之最大的排氣速度，進行該中間搬運室內的排氣。In order to achieve the above object, the intermediate transfer chamber described in the first aspect of the patent application is provided with a transport device, and the transport device is provided. The first chamber of the first environment in which the first pressure is contained in the first pressure and the second chamber in the second environment having the second pressure lower than the first pressure is provided in the first chamber and The intermediate transfer chamber in which the substrate is transported bidirectionally between the second chamber and supports the support portion of the substrate, and is characterized in that the internal pressure of the intermediate transfer chamber is reduced from the first pressure to the second The gas discharge of the gas conductivity of the exhaust gas on the main surface opposite to the support portion of the substrate is controlled when the exhaust device that exhausts the intermediate transfer chamber and the exhaust device exhausts In the control device, the exhaust device performs exhaust gas in the intermediate transfer chamber at a maximum exhaust velocity at which no condensation or condensation of moisture occurs on the main surface of the substrate.
申請專利範圍第2項所述之中間搬運室，係如同申請專利範圍第1項，其中，前述氣體傳導度控制裝置為與前述基板的主面相對向設置之板狀構件。The intermediate transfer chamber according to the second aspect of the invention is the first aspect of the patent application, wherein the gas conductivity control device is a plate-shaped member that is disposed to face the main surface of the substrate.
申請專利範圍第3項所述之中間搬運室，係如同申請專利範圍第1項或第2項所述之中間搬運室，其中，前述氣體傳導度控制裝置係前述排氣裝置進行排氣時，進行控制該主面上的氣體傳導度，以使前述基板的主面上，不會發生水分的凝結或凝縮。The intermediate transfer chamber according to the third aspect of the invention is the intermediate transfer chamber according to the first or second aspect of the patent application, wherein the gas conductivity control device is configured to exhaust the exhaust device. The gas conductance on the main surface is controlled so that condensation or condensation of moisture does not occur on the main surface of the substrate.
申請專利範圍第4項所述之中間搬運室，係如同申請專利範圍第1項所述之中間搬運室，其中，還具備有：測定前述中間搬運室內的水分量之水分量測定裝置，前述排氣裝置係根據該水分量測定裝置的測定結果，進行該中間搬運室內的排氣。The intermediate transfer chamber according to the fourth aspect of the invention is the intermediate transfer chamber according to the first aspect of the invention, further comprising: a moisture measuring device for measuring a moisture content in the intermediate transfer chamber, wherein the row The gas device performs the exhaust in the intermediate transfer chamber based on the measurement result of the moisture content measuring device.
申請專利範圍第5項所述之中間搬運室，係如同申請專利範圍第1項或第5項所述之中間搬運室，其中，還具備有：將前述中間搬運室內之已凝結或凝縮的水分檢測出來之水分量測定裝置，前述排氣裝置係根據該水分檢測裝置的檢測結果，進行該中間搬運室內的排氣。The intermediate transfer chamber according to item 5 of the patent application scope is the intermediate transfer chamber according to the first or fifth aspect of the patent application, and further comprising: condensed or condensed moisture in the intermediate transfer chamber The detected moisture content measuring device performs the exhaust in the intermediate transfer chamber based on the detection result of the moisture detecting device.
申請專利範圍第6項所述之中間搬運室，係如同申請專利範圍第1至6項中任一項所述之中間搬運室，其中，還具備有：將乾燥的氣體，供應至前述中間搬運室內之乾燥氣體供應裝置。The intermediate transfer chamber according to any one of claims 1 to 6, wherein the intermediate transfer chamber according to any one of claims 1 to 6, further comprising: supplying the dry gas to the intermediate conveyance Indoor dry gas supply.
申請專利範圍第7項所述之中間搬運室，係如同申請專利範圍第1至7項中任一項所述之中間搬運室，其中，還具備有：將加熱到特定溫度的氣體，供應至前述中間搬運室內之加熱氣體供應裝置。The intermediate transfer chamber according to any one of claims 1 to 7, wherein the intermediate transfer chamber is further provided with: a gas heated to a specific temperature is supplied to The heating gas supply device in the intermediate transfer chamber.
申請專利範圍第8項所述之中間搬運室，係如同申請專利範圍第1至8項中任一項所述之中間搬運室，其中，還具備有：將把前述中間搬運室內的壓力升壓到大於前述第1壓力的氣體，供應至前述中間搬運室內之升壓氣體供應裝置。The intermediate transfer chamber according to any one of claims 1 to 8, wherein the intermediate transfer chamber according to any one of claims 1 to 8 is further provided to: pressurize the pressure in the intermediate transfer chamber The gas larger than the first pressure is supplied to the boost gas supply device in the intermediate transfer chamber.
申請專利範圍第9項所述之中間搬運室，係如同申請專利範圍第1至9項中任一項所述之中間搬運室，其中，還具備有：將把含在前述中間搬運室內的水分予以分解的氣體，供應至前述中間搬運室內之水分分解氣體供應裝置。The intermediate transfer chamber according to any one of claims 1 to 9, wherein the intermediate transfer chamber according to any one of claims 1 to 9 is further provided with: moisture to be contained in the intermediate transfer chamber The gas to be decomposed is supplied to the moisture decomposition gas supply device in the intermediate transfer chamber.
申請專利範圍第10項所述之中間搬運室，係如同申 請專利範圍第1項所述之中間搬運室，其中，還在前述中間搬運室之與前述第1室的連通部，具備有將阻斷該第1室內的氣體侵入到該中間搬運室內的氣體予以噴出之阻斷氣體噴出手段。The intermediate transfer room mentioned in item 10 of the patent application scope is like Shen In the intermediate transfer chamber according to the first aspect of the invention, the communication portion between the intermediate transfer chamber and the first chamber is further provided with a gas that blocks the gas in the first chamber from entering the intermediate transfer chamber. The blocking gas ejection means to be ejected.
申請專利範圍第11項所述之中間搬運室，係如同申請專利範圍第1項所述之中間搬運室，其中，還具備有：將前述中間搬運室內和內壁的至少一部分予以冷卻之冷卻手段。The intermediate transfer chamber according to claim 11 is the intermediate transfer chamber according to claim 1, further comprising: a cooling means for cooling at least a part of the intermediate transfer chamber and the inner wall .
申請專利範圍第12項所述之中間搬運室，係如同申請專利範圍第1項所述之中間搬運室，其中，對前述第1室內供應乾燥的氣體。The intermediate transfer chamber according to claim 12 is the intermediate transfer chamber according to claim 1, wherein the first indoor chamber is supplied with a dry gas.
為了要達成上述目的，申請專利範圍第13項所述之基板處理系統，其特徵為，至少具備有：對基板施予處理之基板處理裝置、及搬運前述基板之基板搬運裝置、及申請專利範圍第1至12項中任一項所述之中間搬運室。In order to achieve the above object, a substrate processing system according to claim 13 is characterized in that at least a substrate processing apparatus for processing a substrate, a substrate transfer apparatus for transporting the substrate, and a patent application range are provided. The intermediate transfer chamber according to any one of items 1 to 12.
依據申請專利範圍第1項所述之中間搬運室，因中間搬運室內進行排氣時，控制基板的至少與前述支撐部相反側的主面上之排氣的氣體傳導度，所以可以使基板正上方的氣流變緩和。該結果，因可以抑制基板正上方之內部氣體的隔熱膨脹，故可以防止隔熱膨脹所導致顆粒的附著，藉此，可以防止基板的缺陷。再者，因以基板的主面上不會發生水分的凝結或凝縮之最大的排氣速度，進行中間搬 運室內的排氣，所以內部氣體的隔熱膨脹所導致顆粒的產生受到抑制，可以效率良好地使中間搬運室內的氣體壓力下降，藉此，可以防止內部氣體的隔熱膨脹導致該氣體中水分的凝固。According to the intermediate transfer chamber according to the first aspect of the patent application, when the exhaust gas is exhausted in the intermediate transfer chamber, the gas conductivity of the exhaust gas on the main surface of the substrate opposite to the support portion is controlled, so that the substrate can be positively The airflow above it is gentle. As a result, since the thermal expansion of the internal gas directly above the substrate can be suppressed, adhesion of particles due to thermal expansion can be prevented, whereby the defects of the substrate can be prevented. Furthermore, the intermediate shift is performed because the maximum exhaust velocity of condensation or condensation of moisture does not occur on the main surface of the substrate. Since the exhaust gas in the inside of the chamber is suppressed by the thermal expansion of the internal gas, the gas pressure in the intermediate transfer chamber can be efficiently lowered, thereby preventing the thermal expansion of the internal gas from causing moisture in the gas. Solidification.
依據申請專利範圍第2項所述之中間搬運室，因與基板的主面相對向來設置板狀構件，所以可以正確地控制基板的主面上之排氣的氣體傳導度，又可以確實地使基板正上方的氣流變緩和。另外，因中間搬運室內進行排氣時，除了基板正上方的氣體以外，中間搬運室內的氣體會受到隔熱膨脹而凝固該氣體中的水分，不過因在基板的正上方設置板狀構件，所以板狀構件所擔負的功能為基板的罩體。因此，可以確實地防止基板上附著內部氣體的隔熱膨脹所導致的顆粒。According to the intermediate transfer chamber described in the second aspect of the patent application, since the plate-shaped member is provided to face the main surface of the substrate, the gas conductivity of the exhaust gas on the main surface of the substrate can be accurately controlled, and the gas conductivity can be reliably ensured. The airflow directly above the substrate is moderated. In addition, when the exhaust gas is exhausted in the intermediate transfer chamber, the gas in the intermediate transfer chamber is thermally expanded and solidified, and the water in the gas is solidified. However, since the plate member is provided directly above the substrate, the plate member is provided. The function of the plate member is the cover of the substrate. Therefore, particles caused by thermal expansion of the internal gas adhering to the substrate can be surely prevented.
依據申請專利範圍第3項所述之中間搬運室，中間搬運室內進行排氣時，控制該主面上的氣體傳導度，以使前述基板的主面上，不會發生水分的凝結或凝縮，所以可以適切地防止基板上附著內部氣體的隔熱膨脹所導致的顆粒。According to the intermediate transfer chamber described in the third paragraph of the patent application, when the intermediate transfer chamber is exhausted, the gas conductivity on the main surface is controlled so that moisture condensation or condensation does not occur on the main surface of the substrate. Therefore, it is possible to appropriately prevent the particles on the substrate from adhering to the thermal expansion of the internal gas.
依據申請專利範圍第4項所述之中間搬運室，因測定中間搬運室內的水分量，根據該水分量的測定結果，進行該中間搬運室內的排氣，所以可以依照中間搬運室內的水分量來適切地變更排氣速度，藉此，可以適切地防止中間搬運室內之水分的凝固。According to the intermediate transfer chamber described in the fourth paragraph of the patent application, since the amount of moisture in the intermediate transfer chamber is measured, the exhaust in the intermediate transfer chamber is performed based on the measurement result of the moisture content, so that the amount of moisture in the intermediate transfer chamber can be used. By appropriately changing the exhaust speed, it is possible to appropriately prevent the solidification of moisture in the intermediate transfer chamber.
依據申請專利範圍第5項所述之中間搬運室，因將中 間搬運室內之已凝結或凝縮的水分檢測出來，根據該水分的檢測結果，進行該中間搬運室內的排氣，所以可以依照中間搬運室內所產生之水分的檢測結果，適切地變更排氣速度，藉此，可以適切地防止中間搬運室內之水分的更加凝固。According to the intermediate handling room mentioned in item 5 of the patent application scope, The moisture that has been condensed or condensed in the transfer chamber is detected, and the exhaust gas in the intermediate transfer chamber is performed based on the detection result of the moisture. Therefore, the exhaust gas speed can be appropriately changed according to the detection result of the moisture generated in the intermediate transfer chamber. Thereby, it is possible to appropriately prevent the moisture in the intermediate transfer chamber from being more solidified.
依據申請專利範圍第6項所述之中間搬運室，因將乾燥的氣體供應至前述中間搬運室內，所以可以將中間搬運室內的氣體，從含有水分的氣體變換成乾燥的氣體。因此，可以抑制中間搬運室內的氣體中含有水分的事態，藉此，可以解決該氣體中的水分受到隔熱膨脹而凝固的事態。According to the intermediate transfer chamber described in the sixth aspect of the patent application, since the dry gas is supplied to the intermediate transfer chamber, the gas in the intermediate transfer chamber can be converted from the moisture-containing gas into a dry gas. Therefore, it is possible to suppress a situation in which moisture is contained in the gas in the intermediate transfer chamber, whereby it is possible to solve the situation in which the moisture in the gas is thermally expanded and solidified.
依據申請專利範圍第7項所述之中間搬運室，因將加熱到特定溫度的氣體供應至中間搬運室內，所以可以使中間搬運室的內壁或基板的表面所附著的水分蒸發。該結果，可以除去中間搬運室內之含在氣體中的水分，藉此，可以解決中間搬運室內之含在氣體中的水分受到隔熱膨脹而凝固的事態。另外，可以防止中間搬運室內進行排氣時的隔熱膨脹，導致中間搬運室內之氣體的溫度下降到水分的凝固點的事態。因此，含在該氣體中的水分不會凝固。進而，可以使中間搬運室內之氣體的溫度高於含有水分之大氣的溫度。該結果，可以使含有侵入到中間搬運室內的水分之大氣流入到中間搬運室內的下部，又可以防止含有水分的大氣回流到基板的上方。因此，可以防止水分在基板的上方凝固。According to the intermediate transfer chamber described in the seventh aspect of the patent application, since the gas heated to a specific temperature is supplied to the intermediate transfer chamber, the moisture adhering to the inner wall of the intermediate transfer chamber or the surface of the substrate can be evaporated. As a result, it is possible to remove the moisture contained in the gas in the intermediate transfer chamber, thereby solving the situation in which the moisture contained in the gas in the intermediate transfer chamber is thermally expanded and solidified. Further, it is possible to prevent the thermal expansion and expansion during the exhaust in the intermediate transfer chamber, and the temperature of the gas in the intermediate transfer chamber is lowered to the freezing point of the moisture. Therefore, the moisture contained in the gas does not solidify. Further, the temperature of the gas in the intermediate transfer chamber can be made higher than the temperature of the atmosphere containing moisture. As a result, the atmosphere containing the moisture intruding into the intermediate transfer chamber can be made to flow into the lower portion of the intermediate transfer chamber, and the atmosphere containing the moisture can be prevented from flowing back above the substrate. Therefore, it is possible to prevent moisture from solidifying above the substrate.
依據申請專利範圍第8項所述之中間搬運室，因將把中間搬運室內的壓力升壓到大於第1壓力的氣體，供應至中間搬運室內，所以可以使中間搬運室內之氣體的壓力高於含有水分之大氣的壓力。該結果，可以防止含有水分的大氣流入到中間搬運室內，藉此，可以防止含有水分的大氣供應至中間搬運室內。According to the intermediate transfer chamber described in the eighth aspect of the patent application, since the pressure in the intermediate transfer chamber is increased to a gas larger than the first pressure and supplied to the intermediate transfer chamber, the pressure of the gas in the intermediate transfer chamber can be made higher. The pressure of the atmosphere containing moisture. As a result, it is possible to prevent the atmosphere containing moisture from flowing into the intermediate transfer chamber, thereby preventing the atmosphere containing moisture from being supplied to the intermediate transfer chamber.
依據申請專利範圍第9項所述之中間搬運室，因將把含在中間搬運室內的水分予以分解的氣體，供應至前述中間搬運室內，所以可以將含在中間搬運室內的氣體中之水分予以分解。該結果，可以防止水分存在於中間搬運室內的氣體中，藉此，可以解決該氣體中的水分受到隔熱膨脹而凝固。According to the intermediate transfer chamber described in the ninth aspect of the patent application, since the gas which decomposes the moisture contained in the intermediate transfer chamber is supplied to the intermediate transfer chamber, the moisture contained in the gas contained in the intermediate transfer chamber can be given. break down. As a result, it is possible to prevent moisture from being present in the gas in the intermediate transfer chamber, whereby it is possible to solve the problem that the moisture in the gas is thermally expanded and solidified.
依據申請專利範圍第10項所述之中間搬運室，因噴出將該第1室內的氣體侵入到該中間搬運室內予以阻斷的氣體，所以可以阻斷含有水分的大氣侵入中間搬運室內。因此，可以防止含有水分的大氣供應至中間搬運室內。According to the intermediate transfer chamber described in the tenth aspect of the patent application, since the gas that has blocked the gas in the first chamber from entering the intermediate transfer chamber is discharged, the atmosphere containing the moisture can be blocked from entering the intermediate transfer chamber. Therefore, it is possible to prevent the atmosphere containing moisture from being supplied to the intermediate transfer chamber.
依據申請專利範圍第11項所述之中間搬運室，因將前述中間搬運室內和內壁的至少一部分予以冷卻之，所以可以使中間搬運室內之氣體中的水分凝固，並使該氣體中之水分的比例降低，藉此，可以防止氣體中的水分受到隔熱膨脹而凝固。According to the intermediate transfer chamber of the eleventh aspect of the patent application, since at least a part of the intermediate transfer chamber and the inner wall are cooled, moisture in the gas in the intermediate transfer chamber can be solidified, and moisture in the gas can be made. The ratio is lowered, whereby moisture in the gas can be prevented from being solidified by thermal expansion.
依據申請專利範圍第12項所述之中間搬運室，因將乾燥的氣體供應至第1室內，所以可以將第1室內的氣體，從含有水分的大氣變換成乾燥氣體。該結果，可以防 止含有水分的大氣從第1室流入到中間搬運室內，藉此，可以防止含有水分的大氣供應至中間搬運室內。According to the intermediate transfer chamber described in the twelfth aspect of the patent application, since the dry gas is supplied to the first chamber, the gas in the first chamber can be converted from the atmosphere containing moisture into the dry gas. The result can be prevented The atmosphere containing moisture is allowed to flow from the first chamber to the intermediate transfer chamber, thereby preventing the atmosphere containing moisture from being supplied to the intermediate transfer chamber.
依據申請專利範圍第13項所述之基板處理系統，因具備有申請專利範圍第1至12項中任一項所述之中間搬運室，所以可以防止基板的缺陷。According to the substrate processing system of claim 13, the intermediate transfer chamber according to any one of claims 1 to 12 is provided, so that defects of the substrate can be prevented.
以下，參考圖面說明本發明的實施形態。Hereinafter, embodiments of the present invention will be described with reference to the drawings.
首先，針對本發明的實施形態的基板處理系統進行說明。First, a substrate processing system according to an embodiment of the present invention will be described.
第1圖為表示本發明的實施形態的基板處理系統的概略構成之剖面圖。Fig. 1 is a cross-sectional view showing a schematic configuration of a substrate processing system according to an embodiment of the present invention.
第1圖中，基板處理系統1具備有：對作為基板的半導體晶圓(以下，稱為「晶圓」)W，施予RIE(Reactive Ion Etching)處理或灰化處理等製程處理之製程模組(Process Module)(以下，稱為「P/M」)2、及從收容晶圓W之作為容器之前開式晶圓盒(front opening unified pod：FOUP)5取出晶圓W之大氣中搬運裝置3、及配置在該大氣中搬運裝置3與P/M 2之間，晶圓W從大氣中搬運裝置3搬進到P/M 2，或從P/M 2搬出到大氣中搬運裝置3的作為中間搬運室之負載鎖定模組(Load-Lock Module)(以下，稱為「LL/M」)4。In the first embodiment, the substrate processing system 1 includes a process die for performing a process such as RIE (Reactive Ion Etching) processing or ashing processing on a semiconductor wafer (hereinafter referred to as "wafer") W as a substrate. The process module (hereinafter referred to as "P/M") 2, and the transfer of the wafer W from the front opening unified pod (FOUP) 5 before the container W is placed as a container The device 3 is disposed between the atmospheric transport device 3 and the P/M 2, and the wafer W is carried into the P/M 2 from the atmospheric transport device 3 or from the P/M 2 to the atmospheric transport device 3 The load-lock module (hereinafter referred to as "LL/M") 4 as an intermediate transfer chamber.
P/M 2和LL/M 4的內部係以可抽真空方式構成，大氣中搬運裝置3的內部隨時維持在大氣壓。另外，P/M 2 和LL/M 4、以及LL/M 4和大氣中搬運裝置3，分別藉由閘閥6、7來相連接。閘閥6、7為開關自如，將P/M 2和LL/M 4、以及LL/M 4和大氣中搬運裝置3之間，予以相連通或是阻斷。The inside of the P/M 2 and the LL/M 4 is configured to be evacuated, and the inside of the atmospheric conveying device 3 is maintained at atmospheric pressure at any time. In addition, P/M 2 The LL/M 4 and LL/M 4 and the atmospheric conveying device 3 are connected by gate valves 6, 7 respectively. The gate valves 6, 7 are freely switchable, and connect or block P/M 2 and LL/M 4, and LL/M 4 and the atmospheric conveying device 3.
大氣中搬運裝置3具有：載置前開式晶圓盒5之前開式晶圓盒載置台50、及裝載器模組(Loader Module)(以下，稱為「L/M」)51、及將氣體供應至該L/M 51內之氣體供應系統60。The in-air transport device 3 includes an open cassette mounting table 50 and a loader module (hereinafter referred to as "L/M") 51 and a gas before the front open cassette 5 is placed. The gas supply system 60 is supplied to the L/M 51.
前開式晶圓盒載置台50為上面呈平面的台狀物，前開式晶圓盒5例如以等距且多段地載置晶圓W來進行收容。另外，L/M 51為長方體的箱狀物，在內部具有搬運晶圓W之純量型(scalar type)的搬運臂52。The front open type wafer cassette mounting table 50 is a flat upper surface, and the front open type wafer cassette 5 is placed, for example, on the wafer W in an equidistant manner. Further, the L/M 51 is a rectangular parallelepiped box having a scalar type transport arm 52 for transporting the wafer W therein.
另外，在L/M 51之前開式晶圓盒載置台50側的側面，與該前開式晶圓盒載置台50所載置之前開式晶圓盒5相對向地設置晶圓盒開啟器(未圖示)。該晶圓盒開啟器則是開啟前開式晶圓盒5的前面門使前開式晶圓盒5與L/M 51的內部相連通。Further, on the side of the open wafer cassette mounting table 50 side before the L/M 51, a wafer cassette opener is disposed opposite to the front open wafer cassette 5 placed on the front open type wafer cassette mounting table 50 ( Not shown). The pod opener opens the front door of the front open cassette 5 to connect the front open cassette 5 to the inside of the L/M 51.
搬運臂52具有可伸屈地構成之多關節狀的搬運臂腕部53、及安裝在搬運臂腕部53的前端之抓取器54，該抓取器54則是以直接地載置晶圓W的方式構成。另外，載置臂52具有可伸屈地構成之多關節狀的對映臂55，在該對映臂55的前端，例如配置發出雷射光來確認晶圓W的有無知對映感測器(未圖示)。該搬運臂腕部53及對映臂55的各基端，與沿著從搬運臂52的基部56所豎立設 置之臂基端部支柱57進行升降之升降台58相連結。另外，該臂基端部支柱57係以可迴旋的方式構成。為了要辨識前開式晶圓盒5所收容之晶圓W的位置和數量而進行的對映操作，係在對映臂55延伸的狀態下，該對映臂55上升或下降，確認前開式晶圓盒5內之晶圓W的位置和片數。The transport arm 52 has a multi-joint-shaped transport arm arm portion 53 that is stretchably configured, and a gripper 54 that is attached to the front end of the transport arm arm portion 53. The gripper 54 directly mounts the wafer. The way W is structured. Further, the mounting arm 52 has a multi-joint-shaped enlarging arm 55 that is configured to be stretchable, and a ignorant anti-reflection sensor that emits laser light to confirm the wafer W is disposed at the tip end of the engraving arm 55 (for example) Not shown). The base end of the arm arm portion 53 and the engraving arm 55 are erected along the base portion 56 of the transport arm 52. The lifting base 58 on which the arm base end stay 57 is lifted and lowered is coupled. Further, the arm base end stay 57 is configured to be rotatable. In order to recognize the position and the number of the wafers W accommodated in the front opening wafer cassette 5, the alignment arm 55 is raised or lowered in a state where the alignment arm 55 is extended, and the front opening crystal is confirmed. The position and number of wafers W in the round box 5.
搬運臂52係利用搬運臂腕部53而伸屈自如，藉由臂基端部支柱57而迴旋自如，故可以在前開式晶圓盒5和LL/M 4之間自如地搬運抓取器54所載置的晶圓W。The transport arm 52 is freely retractable by the arm arm portion 53 and is freely rotatable by the arm base end post 57. Therefore, the gripper 54 can be freely transported between the front open cassette 5 and the LL/M 4 Wafer W placed.
氣體供應系統60具有：從L/M 51的外部往L/M 51的內部貫穿之氣體導入管61、及與該氣體導入管61的L/M 51外部側前端相連接之氣體供應裝置(未圖示)、及在氣體導入管61被配置在L/M 51與氣體供應裝置之間之控制閥63。本實施形態中，氣體供應系統60係將N2 氣體或乾燥空氣等的乾燥氣體供應至L/M 51內，使L/M 51內的水分量減少。The gas supply system 60 has a gas introduction pipe 61 that penetrates from the outside of the L/M 51 to the inside of the L/M 51, and a gas supply device that is connected to the front end of the L/M 51 of the gas introduction pipe 61 (not The control valve 63 is disposed between the L/M 51 and the gas supply device in the gas introduction pipe 61. In the present embodiment, the gas supply system 60 supplies a dry gas such as N 2 gas or dry air to the L/M 51 to reduce the amount of moisture in the L/M 51.
LL/M 4具有配置有以伸屈和迴旋的方式構成之移載臂70(搬運裝置)，並且在移載臂70之後述的抓取器74之晶圓載置面的正上方相對向設置之板狀構件90(氣體傳導度控制裝置)之腔體71、及將腔體71內予以排氣之LL/M排氣系統73(排氣裝置)。The LL/M 4 has a transfer arm 70 (transporting device) configured to be stretched and swung, and is disposed opposite to the wafer mounting surface of the gripper 74 described later of the transfer arm 70. The cavity 71 of the plate member 90 (gas conductivity control device) and the LL/M exhaust system 73 (exhaust device) for exhausting the cavity 71.
移載臂70為由複數個腕部所組成之純量型(scalar type)的搬運臂，具有被安裝在該前端之抓取器74(支撐部)。該抓取器74係以直接載置的方式構成。此外，抓 取器74的形狀則是與上述抓取器54大致相同。The transfer arm 70 is a scalar type transfer arm composed of a plurality of wrists, and has a gripper 74 (support portion) attached to the front end. The gripper 74 is configured to be placed directly. In addition, catch The shape of the picker 74 is substantially the same as that of the gripper 54 described above.
當晶圓W從大氣中搬運裝置3搬入到P/M 2的情況，閘閥7張開時，移載臂70則從L/M 51內的搬運臂52承接過來的晶圓W，閘閥6張開時，移載臂70進入到P/M 2的腔體10(第2室)內，將晶圓W載置在從載置台12的上面所突出之推桿(未圖示)的上端。另外，當晶圓W從P/M 2搬入到大氣中搬運裝置3的情況，閘閥6張開時，載置臂70進入到P/M 2的腔體10內，承接被載置在從載置台12的上面所突出之推桿上端之晶圓W。閘閥7張開時，移載臂70將晶圓W轉交給L/M 51內的搬運臂52。此外，移載臂70並不侷限於純量型，也可以是蛙腳型(frog leg type)或雙臂型(double arm type)。When the wafer W is carried into the P/M 2 from the atmospheric transfer device 3, when the gate valve 7 is opened, the transfer arm 70 is transferred from the transfer arm 52 in the L/M 51, and when the gate valve 6 is opened, the transfer is performed. The carrier arm 70 enters the cavity 10 (second chamber) of the P/M 2, and the wafer W is placed on the upper end of a pusher (not shown) that protrudes from the upper surface of the mounting table 12. Further, when the wafer W is carried from the P/M 2 to the atmospheric conveying device 3, when the gate valve 6 is opened, the placing arm 70 enters the cavity 10 of the P/M 2 and is placed on the mounting table 12 The wafer W at the upper end of the push rod highlighted above. When the gate valve 7 is opened, the transfer arm 70 transfers the wafer W to the transfer arm 52 in the L/M 51. Further, the transfer arm 70 is not limited to a scalar type, and may be a frog leg type or a double arm type.
氣體供應系統72具有：從腔體71的外部往腔體71的內部貫穿之氣體導入管75、及與氣體導入管75的腔體71外部側前端相連接之氣體供應裝置(未圖示)、及在氣體導入管75被配置在腔體71與氣體供應裝置之間之控制閥77、及在氣體導入管75被配置在腔體71與控制閥77之間之加熱單元76、及將被配置在氣體導入管75的腔體71內部側前端的氣體予以噴出之氣體供應口。本實施形態則是具有在氣體供應口的前端具有一對真空破壞過濾器(Break Filter)80。本實施形態中，氣體供應系統72係對腔體71內供應惰性氣體、N2 氣體或乾燥空氣等的乾燥氣體、利用加熱單元76加熱到特定的溫度以上的氣體、或分解後述的水分的氣體。真空破壞過濾器80為該長度 被設定為例如200mm之多孔質狀的陶瓷製過濾器。The gas supply system 72 includes a gas introduction pipe 75 that penetrates from the outside of the cavity 71 into the cavity 71, and a gas supply device (not shown) that is connected to the front end of the cavity 71 of the gas introduction pipe 75. And a control valve 77 in which the gas introduction pipe 75 is disposed between the cavity 71 and the gas supply device, and a heating unit 76 disposed between the cavity 71 and the control valve 77 in the gas introduction pipe 75, and will be disposed A gas supply port that is ejected by gas at the front end of the inside of the cavity 71 of the gas introduction pipe 75. In the present embodiment, a pair of vacuum filter 80s are provided at the front end of the gas supply port. In the present embodiment, the gas supply system 72 supplies a dry gas such as an inert gas, N 2 gas or dry air to the cavity 71, a gas heated to a specific temperature or higher by the heating unit 76, or a gas which decomposes water to be described later. . The vacuum destruction filter 80 is a porous ceramic filter having a length of, for example, 200 mm.
LL/M排氣系統73具有貫穿到腔體71的內部之排氣管78、及配置在該排氣管78的中途之控制閥79，與上述過的氣體供應系統72協調來控制腔體71內部的壓力。The LL/M exhaust system 73 has an exhaust pipe 78 penetrating the inside of the cavity 71, and a control valve 79 disposed in the middle of the exhaust pipe 78, and is coordinated with the above-described gas supply system 72 to control the cavity 71. Internal pressure.
其次，針對在第1圖的LL/M 4所執行的針空排氣處理進行說明。Next, the needle air exhausting process executed in the LL/M 4 of Fig. 1 will be described.
進行真空排氣處理時晶圓W的搬運順序，首先將被收容在前開式晶圓盒5的晶圓，利用搬運臂52，搬運至大氣壓下的LL/M 4的腔體71內，關閉閘閥7後，利用L/M排氣系統73，將腔體71內予以真空排氣，當腔体71內達到特定的壓力，則會開啟閘閥8，利用移載臂70，將晶圓W搬運至P/M 2的腔體10內。When the wafer W is transported during the vacuum evacuation process, the wafer stored in the front opening wafer cassette 5 is first transported to the cavity 71 of the LL/M 4 at atmospheric pressure by the transfer arm 52, and the gate valve is closed. After 7th, the cavity 71 is evacuated by the L/M exhaust system 73. When a certain pressure is reached in the cavity 71, the gate valve 8 is opened, and the wafer W is transported to the wafer W by the transfer arm 70. Inside the cavity 10 of the P/M 2 .
過去以來會發生的問題係經由晶圓W搬運時進行LL/M 4的腔體71內的真空排氣之過程，腔體71內的氣體受到隔熱膨脹而被急速冷卻，腔體71內含在氣體中的水分凝固，受到凝固所導致的微細顆粒附著在晶圓W上。The problem that has occurred in the past is the process of vacuum evacuation in the cavity 71 of the LL/M 4 when the wafer W is transported, and the gas in the cavity 71 is rapidly expanded by thermal expansion, and the cavity 71 contains The moisture in the gas solidifies, and the fine particles caused by the solidification adhere to the wafer W.
本實施形態係如第2圖所示，與移載臂70的抓取器74之晶圓載置面的正上方相對向來設置板狀構件90，減小抓取器74的晶圓載置面上所載置之晶圓W的正上方之氣流的氣體傳導度。藉由此方式，可以在LL/M排氣系統73進行真空排氣時，使晶圓W正上方的氣流變緩和，藉此，可以防止該氣體受到隔熱膨脹導致該氣體中的水分凝固。另外，在LL/M排氣系統73進行真空排氣時，除了上 述晶圓W正上方的氣體以外，腔體內的氣體受到隔熱膨脹導致該氣體中的水分凝固，不過在晶圓W的正上方設有板狀構件90，故板狀構件90所擔負的工作是晶圓W的罩體。藉此，不會在晶圓W上附著上述氣體中的水分凝固所產生的顆粒。In the present embodiment, as shown in Fig. 2, the plate-like member 90 is provided to face the wafer mounting surface of the gripper 74 of the transfer arm 70, and the wafer-mounted member 90 is reduced on the wafer mounting surface of the gripper 74. The gas conductivity of the gas stream directly above the wafer W placed thereon. In this way, when the LL/M exhaust system 73 performs vacuum evacuation, the airflow immediately above the wafer W can be relaxed, whereby the gas can be prevented from being thermally expanded and the moisture in the gas can be solidified. In addition, when the LL/M exhaust system 73 performs vacuum evacuation, in addition to the upper In addition to the gas directly above the wafer W, the gas in the chamber is thermally expanded and the moisture in the gas is solidified. However, the plate member 90 is provided directly above the wafer W, so that the plate member 90 is responsible for the work. It is the cover of the wafer W. Thereby, particles generated by solidification of moisture in the above gas are not adhered to the wafer W.
此外，為了要防止氣體中水分的凝固，經本發明者確認過，不要讓氣體的排氣速度低於3.81/sec即可，相當於該排氣速度之晶圓正上方的氣體傳導度則為46.31/sec。此處，腔體71之沿著氣流方向的長度(第2圖中之水平方向的長度)設定為379mm，腔體71之沿著雨氣流方向成直角之方向的長度(第2圖中之深度方向的長度)設定為309mm的話，為了要實現上述的氣體傳導度，將抓取器74的晶圓載置面上所載置之晶圓W與板狀構件90之間的距離，設定為10.7mm較佳。Further, in order to prevent solidification of moisture in the gas, it has been confirmed by the inventors that the gas discharge rate is not lower than 3.81/sec, and the gas conductivity immediately above the wafer corresponding to the exhaust velocity is 46.31. /sec. Here, the length of the cavity 71 in the airflow direction (the length in the horizontal direction in FIG. 2) is set to 379 mm, and the length of the cavity 71 in the direction perpendicular to the direction of the rain airflow (depth in FIG. 2) When the length of the direction is set to 309 mm, the distance between the wafer W placed on the wafer mounting surface of the gripper 74 and the plate-like member 90 is set to 10.7 mm in order to achieve the above gas conductivity. Preferably.
依據本實施形態，因控制抓取器74的晶圓載置面上所載置之晶圓W的正上方之氣流的氣體傳導度之板狀構件90，會使晶圓W正上方的氣流變緩和，所以在LL/M 4的腔體71內進行真空排氣的過程，可以防止在晶圓W上附著內部氣體的隔熱膨脹所導致的顆粒，藉此，可以防止晶圓W的缺陷。According to the present embodiment, the plate-like member 90 for controlling the gas conductivity of the airflow directly above the wafer W placed on the wafer mounting surface of the gripper 74 causes the airflow immediately above the wafer W to be relaxed. Therefore, the vacuum evacuation process in the cavity 71 of the LL/M 4 prevents particles adhering to the thermal expansion of the internal gas from adhering to the wafer W, thereby preventing defects of the wafer W.
另外，本實施形態係與抓取器74的晶圓載置面上的正上方相對向來設置板狀構件90，減小抓取器74的晶圓載置面上所載置之晶圓W的正上方之氣體傳導度，不過也可以不設置板狀構件90，而利用升起抓取器74的晶圓 載置面上所載置的晶圓W，使該晶圓接近腔體71內的頂棚，以減小該晶圓正上方的氣體傳導度。Further, in the present embodiment, the plate-like member 90 is provided facing the wafer mounting surface of the gripper 74 so as to face the wafer W on the wafer mounting surface of the gripper 74. Gas conductivity, but it is also possible to use a wafer that raises the gripper 74 without providing the plate member 90. The wafer W placed on the mounting surface is brought close to the ceiling in the cavity 71 to reduce the gas conductivity directly above the wafer.
另外，本實施形態中，也可以控制LL/M排氣系統73進行腔體71內的真空排氣的排氣速度，進行緩慢排氣，藉由此方式，可以緩慢地降下腔體71內之氣體的壓力，藉此，可以防止該氣體受到隔熱膨脹導致該氣體中的水分凝固。Further, in the present embodiment, the LL/M exhaust system 73 can be controlled to perform the evacuation speed of the vacuum exhaust in the cavity 71, and the exhaust gas can be slowly exhausted, whereby the cavity 71 can be slowly lowered. The pressure of the gas, whereby the gas is prevented from being thermally expanded and causes moisture in the gas to solidify.
再者，本實施型態中，如第3圖(A)所示，在腔室71內設置溫度計91，使用溫度計91測量腔體71內之水分量，即使根據該測量結果，動態地控制LL/M排氣系統73之腔體71內之真空排氣之排氣速度亦可，依此可以因應腔體71內之水分量而適當地變更排氣速度，因此可以適當地防止該腔體71內之水分凝固。Further, in the present embodiment, as shown in Fig. 3(A), a thermometer 91 is provided in the chamber 71, and the moisture content in the cavity 71 is measured using the thermometer 91, even if LL is dynamically controlled based on the measurement result. The exhaust velocity of the vacuum exhaust gas in the cavity 71 of the /M exhaust system 73 may also be such that the exhaust velocity can be appropriately changed in accordance with the moisture content in the cavity 71, so that the cavity 71 can be appropriately prevented. The water inside is solidified.
另外，本實施形態中，也可以如第3(A)圖所示，在腔體71內設置顆粒監視器92a，利用顆粒監視器92a來檢測腔體71內的氣體受到隔熱膨脹所產生的顆粒，根據該檢測結果來動態地控制LL/M排氣系統73之腔體71內的真空排氣的排氣速度，藉由此方式，可以依照腔體71內所產生之顆粒的檢測結果來適切地變更排氣速度，藉此，可以適切地防止該腔體71內的水分凝固。本實施形態中，也可以如第3(A)圖所示，將顆粒監視器92b設置在腔體71內之LL/M排氣系統73的排氣管線上，檢測排氣顆粒檢測，依照排氣顆粒的檢測結果，動態地控制LL/M排氣系統73之腔體71內的真空排氣的排氣速度。 此外，顆粒監視器92a、92b係使用雷射光散射法等來檢測顆粒。Further, in the present embodiment, as shown in Fig. 3(A), a particle monitor 92a may be provided in the cavity 71, and the particle monitor 92a may be used to detect that the gas in the cavity 71 is thermally expanded. The particles dynamically control the exhaust velocity of the vacuum exhaust gas in the cavity 71 of the LL/M exhaust system 73 according to the detection result, by which the detection result of the particles generated in the cavity 71 can be used. The exhaust gas velocity is appropriately changed, whereby the moisture in the cavity 71 can be appropriately prevented from solidifying. In the present embodiment, as shown in Fig. 3(A), the particle monitor 92b may be disposed in the exhaust line of the LL/M exhaust system 73 in the cavity 71, and the exhaust particle detection may be detected. As a result of the detection of the gas particles, the exhaust velocity of the vacuum exhaust gas in the cavity 71 of the LL/M exhaust system 73 is dynamically controlled. Further, the particle monitors 92a and 92b detect the particles using a laser light scattering method or the like.
另外，本實施形態中，也可以如第3(B)圖所示，在腔體71內設置具備有與該腔體71內的氣體相接觸的冷卻體之冷卻裝置93，利用冷卻裝置來將腔體71內的氣體中的水分予以凝固，使該氣體中之水分的比例減小，藉由此方式，可以在利用LL/M排氣系統73來將腔體71內予以真空排氣時，使腔體71內之含在氣體中之水分的比例減小，又可以防止該氣體中的水分受到隔熱膨脹而凝固。本實施形態係在腔體71內設置冷卻裝置93，使腔體71內的氣體中之水分的比例減小，不過也可以不設置冷卻裝置93，利用將腔體71內及內壁的至少一部分冷卻到水分凝固的溫度，使腔體71內的氣體中之水分的比例減小。Further, in the present embodiment, as shown in FIG. 3(B), a cooling device 93 including a cooling body that is in contact with the gas in the cavity 71 may be provided in the cavity 71, and the cooling device may be used by the cooling device. The moisture in the gas in the cavity 71 is solidified to reduce the proportion of moisture in the gas. In this way, when the cavity 71 is vacuum-exhausted by the LL/M exhaust system 73, The proportion of the moisture contained in the gas in the cavity 71 is reduced, and the moisture in the gas is prevented from being thermally expanded and solidified. In the present embodiment, the cooling device 93 is provided in the cavity 71 to reduce the proportion of moisture in the gas in the cavity 71. However, the cooling device 93 may not be provided, and at least a part of the inside and the inner wall of the cavity 71 may be used. Cooling to a temperature at which the water solidifies reduces the proportion of moisture in the gas in the chamber 71.
另外，本實施形態中，也可以如第3(C)圖所示，在腔體71的與閘閥7的連通部，裝備氣體噴射系統94，在應利用氣體噴射系統94來阻斷閘閥7開啟時L/M 51內之含有水分的大氣侵入到腔體71內之閘閥7的附近，噴出簾幕狀流的氣體，藉由此方式，可以防止含有水分的大氣從L/M 51內侵入到腔體71內，藉此，可以防止含有水分的大氣侵入到腔體71內。Further, in the present embodiment, as shown in Fig. 3(C), the gas injection system 94 may be provided in the communication portion of the cavity 71 with the gate valve 7, and the gas injection system 94 should be used to block the gate valve 7 from being opened. When the moisture-containing atmosphere in the L/M 51 intrudes into the vicinity of the gate valve 7 in the cavity 71, the gas of the curtain-like flow is ejected, whereby the atmosphere containing moisture can be prevented from intruding into the L/M 51. In the cavity 71, the atmosphere containing moisture can be prevented from intruding into the cavity 71.
另外，本實施形態中，也可以如第4(A)圖所示，利用氣體供應系統72來將N2 氣體或乾燥空氣等的氣體供應至腔體71內，將腔體71內的氣體，從含有水分的氣體變換成該乾燥的氣體，藉由此方式，可以抑制利用LL/M 排氣系統73來將腔體71內予以真空排氣時，在腔體71內的氣體中含有水分，又可以解決該氣體中的水分受到隔熱膨脹而凝固。Further, in the present embodiment, as shown in FIG. 4(A), a gas such as N 2 gas or dry air may be supplied into the cavity 71 by the gas supply system 72, and the gas in the cavity 71 may be used. By converting the gas containing moisture into the dry gas, it is possible to prevent the gas in the cavity 71 from containing moisture when the inside of the cavity 71 is evacuated by the LL/M exhaust system 73. Further, it is possible to solve the problem that the moisture in the gas is solidified by thermal expansion.
另外，本實施形態中，也可以如第4(A)圖所示，利用氣體供應系統72來將分解水分的氣體供應至腔體71內，分解腔體71內之含在氣體中的水分，藉由此方式，可以防止利用LL/M排氣系統73來將腔體71內予以真空排氣時，腔體71內的的氣體中存在有水分，又可以解決該氣體中的水分受到隔熱膨脹而凝固。分解水分之氣體的供應方法為任意，不過並不侷限單調地進行供應，例如為了要有效率地分解水分，也可以經過脈衝化來進行供應、或施加脈動而一面變動壓力一面進行供應。藉由此方式，可以促進分解水分的氣體與含有水分的氣體的混合而更效率良好地進行水分的分解。Further, in the present embodiment, as shown in FIG. 4(A), the gas supply system 72 may supply the gas which decomposes moisture into the cavity 71, and decompose the moisture contained in the gas in the cavity 71. In this way, it is possible to prevent the LL/M exhaust system 73 from vacuuming the inside of the cavity 71, the presence of moisture in the gas in the cavity 71, and the solution of the moisture in the gas to be insulated. Expand and solidify. The method of supplying the gas for decomposing water is arbitrary, but it is not limited to supply monotonously. For example, in order to efficiently decompose water, it may be supplied by pulsing or pulsating while supplying pressure. In this way, it is possible to promote the decomposition of the water more efficiently by mixing the gas which decomposes the water and the gas containing the moisture.
分解水分的氣體為氧鹵(oxyhalogen)類等，例如甲基矽烷化合物、二氯丙烷、二溴丙烷、亞硝醯氯(nitrosyl chloride)、羧醯氯(carboxyl chloride)、羧醯氟(carboxyl fluoride)、乙硼烷(diborane)、氯(chlorine)、氟(fluorine)、亞硫醯溴(thionyl bromide)、碘甲基丙烷、乙醯氯(acetyl chloride)、丙酮二醯縮醛(acetone diacylacetal)、一氧化碳。甲基矽烷化合物為三甲基一氯矽烷(trimethyl chlorosilane)、二甲基二氯矽烷(dimethyl dichlorosilane)、一甲基三氯矽烷(monomethyl trichlorosilane)、四氯矽烷 (tetramethyl chlorosilane)等。The gas which decomposes moisture is an oxyhalogen type or the like, for example, a methyl decane compound, dichloropropane, dibromopropane, nitrosyl chloride, carboxyl chloride, or carboxyl fluoride. ), diborane, chlorine, fluorine, thionyl bromide, methyl iodide, acetyl chloride, acetone diacylacetal Carbon monoxide. The methyl decane compound is trimethyl chlorosilane, dimethyl dichlorosilane, monomethyl trichlorosilane, tetrachloro decane. (tetramethyl chlorosilane) and the like.
另外，本實施形態中，也可以如第4(B)圖所示，利用氣體供應系統72來將加熱到100℃以上的氣體供應至腔體71內，使腔體71的內壁貨晶圓W的表面所附著的水分蒸發，藉由此方式，可以除去腔體71內含在氣體中的水分，藉此，可以解決利用LL/M排氣系統73來將腔體71內予以真空排氣時，腔體71內含在氣體中的水分受到隔熱膨脹而凝固的事態。Further, in the present embodiment, as shown in Fig. 4(B), the gas supplied to the cavity 71 may be supplied to the cavity 71 by the gas supply system 72, and the inner wall of the cavity 71 may be wafer-formed. The moisture adhering to the surface of W evaporates, whereby the moisture contained in the gas in the cavity 71 can be removed, whereby the LL/M exhaust system 73 can be used to vacuum evacuate the cavity 71. At the time, the moisture contained in the gas contained in the cavity 71 is thermally expanded and solidified.
另外，也可以將加熱到應會防止受到LL/M排氣系統73的腔體71內進行真空排氣時的隔熱膨脹，導致腔體71內之氣體的溫度，下降到水分的凝固點之特定的溫度以上之氣體，利用氣體供應系統72，供應至腔體71內，藉由此方式，因不會發生腔體71內的氣體受到隔熱膨脹，導致該氣體的溫度下降到水分的凝固點的事態，所以含在該氣體中的水分不會凝固。進而，因如上述，將加熱到特定的溫度以上之氣體供應至腔體71內，所以可以使腔體71內之氣體的溫度高於L/M 51內之含有水分之大氣的溫度。藉由此方式，可以使閘閥7開啟時從L/M 51流入到腔體71內之含有水分的大氣，流入到腔體71內的下部，又可以防止含有水分的大氣回流到抓取器74的晶圓載置面所載置之晶圓W的上方。因此，可以防止水分在晶圓W的上方凝固。Further, it is also possible to heat up to prevent thermal expansion during vacuum evacuation in the cavity 71 of the LL/M exhaust system 73, and the temperature of the gas in the cavity 71 is lowered to the specific point of freezing of the water. The gas above the temperature is supplied to the cavity 71 by the gas supply system 72. In this way, since the gas in the cavity 71 is not thermally expanded, the temperature of the gas drops to the freezing point of the water. In the event, the moisture contained in the gas does not solidify. Further, since the gas heated to a specific temperature or higher is supplied into the cavity 71 as described above, the temperature of the gas in the cavity 71 can be made higher than the temperature of the atmosphere containing moisture in the L/M 51. In this way, the moisture-containing atmosphere that flows from the L/M 51 into the cavity 71 when the gate valve 7 is opened can flow into the lower portion of the cavity 71, and the moisture-containing atmosphere can be prevented from flowing back to the gripper 74. The wafer mounting surface is placed above the wafer W. Therefore, it is possible to prevent moisture from solidifying above the wafer W.
另外，本實施形態中，也可以如第4(C)圖所示，利用供應系統來將乾燥氣體供應至腔體71內，使腔體71 內之氣體的壓力高於L/M 51之含有水分之大氣的壓力，藉由此方式，可以防止閘閥7開啟時L/M 51之含有水分的大氣流入到腔體71內，藉此，可以防止含有水分的大氣供應至腔體71內。Further, in the present embodiment, as shown in Fig. 4(C), the drying gas may be supplied into the cavity 71 by the supply system to cause the cavity 71. The pressure of the gas inside is higher than the pressure of the atmosphere containing moisture of the L/M 51, thereby preventing the moisture-containing atmosphere of the L/M 51 from flowing into the cavity 71 when the gate valve 7 is opened, whereby The atmosphere containing moisture is prevented from being supplied into the cavity 71.
另外，本實施形態，也可以如第1圖所示，利用氣體供應系統60來將N2 氣體或乾燥空氣等的乾燥氣體供應至L/M 51內，將L/M 51的氣體從含有水分的大氣變換成該乾燥氣體。藉由此方式，可以防止閘閥7開啟時含有水分的大氣流入到LL/M 4的腔體71內，藉此，可以防止含有水分的大氣供應至腔體71內。另外，利用氣體供應系統60來將分解上述的水分的氣體供應至L/M 51內，將L/M 51之含在大氣中的水分予以分解，藉此也會獲得同樣的效果。Further, in the present embodiment, as shown in Fig. 1, a dry gas such as N 2 gas or dry air may be supplied to the L/M 51 by the gas supply system 60, and the gas of the L/M 51 may be contained. The atmosphere is transformed into the dry gas. In this way, it is possible to prevent the atmosphere containing moisture from flowing into the cavity 71 of the LL/M 4 when the gate valve 7 is opened, whereby the atmosphere containing moisture can be prevented from being supplied into the cavity 71. Further, the gas supply system 60 is used to supply the gas decomposing the above-described moisture into the L/M 51, and the moisture contained in the atmosphere of the L/M 51 is decomposed, whereby the same effect can be obtained.
1‧‧‧基板處理系統1‧‧‧Substrate processing system
2‧‧‧製程模組2‧‧‧Process Module
3‧‧‧大氣中搬運裝置3‧‧‧Atmospheric handling device
4‧‧‧負載鎖定模組4‧‧‧Load lock module
51‧‧‧裝載器模組51‧‧‧Loader Module
60、72‧‧‧氣體供應系統60, 72‧‧‧ gas supply system
70‧‧‧移載臂70‧‧‧Transfer arm
73‧‧‧LL/M排氣系統73‧‧‧LL/M exhaust system
74‧‧‧抓取器74‧‧‧ Grabber
90‧‧‧板狀構件90‧‧‧ plate-like members
第1圖為本發明的第1實施形態的基板處理系統的概略構成之剖面圖。Fig. 1 is a cross-sectional view showing a schematic configuration of a substrate processing system according to a first embodiment of the present invention.
第2圖為說明在第1圖的LL/M所執行的真空排氣處理之圖。Fig. 2 is a view for explaining vacuum evacuation processing executed in LL/M of Fig. 1.
第3圖為表示第2圖的真空排氣處理的變形例之圖；第3(A)圖為控制排氣速度的情況，第3(B)圖為設有冷卻裝置的情況，第3(C)圖為噴出簾幕狀流的氣體的情況。Fig. 3 is a view showing a modification of the vacuum exhaust treatment in Fig. 2; Fig. 3(A) shows a case where the exhaust speed is controlled, and Fig. 3(B) shows a case where a cooling device is provided, and 3 ( C) The figure shows the case of a gas that ejects a curtain flow.
第4圖為表示第2圖的真空排氣處理的變形例之圖； 第4(A)圖為供應乾燥空氣等的情況，第4(B)圖為供應加熱過的氣體的情況，第4(C)圖為升高腔體內的壓力的情況。Fig. 4 is a view showing a modification of the vacuum evacuation process of Fig. 2; Fig. 4(A) shows the case where dry air or the like is supplied, Fig. 4(B) shows the case where the heated gas is supplied, and Fig. 4(C) shows the case where the pressure in the chamber is raised.
1‧‧‧基板處理系統1‧‧‧Substrate processing system
2‧‧‧製程模組2‧‧‧Process Module
3‧‧‧大氣中搬運裝置3‧‧‧Atmospheric handling device
4‧‧‧負載鎖定模組4‧‧‧Load lock module
5‧‧‧前開式晶圓盒5‧‧‧Front open wafer cassette
6‧‧‧閘閥6‧‧‧ gate valve
7‧‧‧閘閥7‧‧‧ gate valve
10‧‧‧腔體10‧‧‧ cavity
12‧‧‧載置台12‧‧‧ mounting table
50‧‧‧開式晶圓盒載置台50‧‧‧Open wafer cassette mounting table
51‧‧‧裝載器模組51‧‧‧Loader Module
52‧‧‧搬運臂52‧‧‧Transport arm
53‧‧‧搬運臂腕部53‧‧‧Transport arm wrist
54‧‧‧抓取器54‧‧‧ Grabber
55‧‧‧對映臂55‧‧‧Attacher arm
56‧‧‧基部56‧‧‧ base
57‧‧‧臂基端部支柱57‧‧‧arm base end pillar
58‧‧‧升降台58‧‧‧ lifting platform
60‧‧‧氣體供應系統60‧‧‧ gas supply system
63‧‧‧控制閥63‧‧‧Control valve
70‧‧‧移載臂70‧‧‧Transfer arm
71‧‧‧腔體71‧‧‧ cavity
73‧‧‧負載鎖定模組排氣系統73‧‧‧Load lock module exhaust system
74‧‧‧抓取器74‧‧‧ Grabber
75‧‧‧氣體導入管75‧‧‧ gas introduction tube
76‧‧‧加熱單元76‧‧‧heating unit
77‧‧‧控制閥77‧‧‧Control valve
78‧‧‧排氣管78‧‧‧Exhaust pipe
79‧‧‧控制閥79‧‧‧Control valve
80‧‧‧真空破壞過濾器80‧‧‧Vacuum damage filter
90‧‧‧板狀構件90‧‧‧ plate-like members
Claims (13)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006210304A JP5037058B2 (en) | 2006-08-01 | 2006-08-01 | Intermediate transfer chamber, substrate processing system, and exhaust method for intermediate transfer chamber |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200822968A TW200822968A (en) | 2008-06-01 |
| TWI421126B true TWI421126B (en) | 2014-01-01 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096128005A TWI421126B (en) | 2006-08-01 | 2007-07-31 | Intermediate handling room and substrate processing system |
Country Status (4)
| Country | Link |
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| JP (1) | JP5037058B2 (en) |
| KR (1) | KR20080012131A (en) |
| CN (1) | CN100514557C (en) |
| TW (1) | TWI421126B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5090291B2 (en) * | 2008-08-18 | 2012-12-05 | 大日本スクリーン製造株式会社 | Substrate processing equipment |
| JP5295808B2 (en) * | 2009-02-09 | 2013-09-18 | 東京エレクトロン株式会社 | Particle adhesion prevention method and substrate transport method |
| JP2010219228A (en) * | 2009-03-16 | 2010-09-30 | Hitachi Kokusai Electric Inc | Substrate processing apparatus |
| JP2011077096A (en) * | 2009-09-29 | 2011-04-14 | Hitachi High-Tech Instruments Co Ltd | Electronic component mounting apparatus, component feeder, and method of mounting electronic component |
| KR101130558B1 (en) * | 2009-10-27 | 2012-03-30 | 주식회사 테스 | Transfer Chamber having Plate for Heat Exchange and Semiconductor Fabrication Equipment having The same |
| CN104210844B (en) * | 2014-09-10 | 2016-11-02 | 深圳市华星光电技术有限公司 | Glass substrate transmission system and mechanical hand thereof |
| CN106531658B (en) * | 2015-09-10 | 2020-03-31 | 北京北方华创微电子装备有限公司 | Pressure control method and device |
| JP7458267B2 (en) | 2020-08-19 | 2024-03-29 | 東京エレクトロン株式会社 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE TRANSFER METHOD |
| TWI763518B (en) * | 2021-06-02 | 2022-05-01 | 南亞科技股份有限公司 | Wafer container |
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| US6382895B1 (en) * | 1998-12-28 | 2002-05-07 | Anelva Corporation | Substrate processing apparatus |
| US20030054668A1 (en) * | 2001-09-19 | 2003-03-20 | Tokyo Electron Limited | Reduced-pressure drying unit and coating film forming method |
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| JP2970889B2 (en) * | 1991-06-05 | 1999-11-02 | 東京エレクトロン株式会社 | Exhaust port structure of vacuum vessel |
| JP2818054B2 (en) * | 1991-06-22 | 1998-10-30 | 克嘉 蓼沼 | Water decomposing agent, method for decomposing and decomposing water on material surface using the same, method for decomposing and removing water in gas, and their devices |
| US5308989A (en) * | 1992-12-22 | 1994-05-03 | Eaton Corporation | Fluid flow control method and apparatus for an ion implanter |
| JPH06196540A (en) * | 1992-12-25 | 1994-07-15 | Hitachi Ltd | Vacuum device |
| JP3394293B2 (en) * | 1993-09-20 | 2003-04-07 | 株式会社日立製作所 | Method for transporting sample and method for manufacturing semiconductor device |
| JP3471077B2 (en) * | 1993-12-24 | 2003-11-25 | 東京エレクトロン株式会社 | Vacuum vessel pressure control method |
| JPH08124993A (en) * | 1994-10-27 | 1996-05-17 | Kokusai Electric Co Ltd | Load locking chamber for semiconductor production device |
| JPH09129709A (en) * | 1995-10-27 | 1997-05-16 | Nec Corp | Processing apparatus |
| JPH10144581A (en) * | 1996-11-14 | 1998-05-29 | Kokusai Electric Co Ltd | Semiconductor device |
| JPH10173025A (en) * | 1996-12-16 | 1998-06-26 | Kokusai Electric Co Ltd | Load lock chamber of semiconductor manufacturing device |
| JP3595756B2 (en) * | 2000-06-01 | 2004-12-02 | キヤノン株式会社 | Exposure apparatus, lithography apparatus, load lock apparatus, device manufacturing method, and lithography method |
| JP2007049046A (en) * | 2005-08-11 | 2007-02-22 | Hitachi Kokusai Electric Inc | Semiconductor device manufacturing method |
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2006
- 2006-08-01 JP JP2006210304A patent/JP5037058B2/en not_active Expired - Fee Related
-
2007
- 2007-06-01 KR KR1020070053690A patent/KR20080012131A/en not_active Application Discontinuation
- 2007-06-22 CN CNB2007101125979A patent/CN100514557C/en not_active Expired - Fee Related
- 2007-07-31 TW TW096128005A patent/TWI421126B/en not_active IP Right Cessation
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6382895B1 (en) * | 1998-12-28 | 2002-05-07 | Anelva Corporation | Substrate processing apparatus |
| US20030054668A1 (en) * | 2001-09-19 | 2003-03-20 | Tokyo Electron Limited | Reduced-pressure drying unit and coating film forming method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100514557C (en) | 2009-07-15 |
| KR20080012131A (en) | 2008-02-11 |
| CN101127302A (en) | 2008-02-20 |
| JP5037058B2 (en) | 2012-09-26 |
| JP2008041719A (en) | 2008-02-21 |
| TW200822968A (en) | 2008-06-01 |
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