JP2001338967A - Board processing device - Google Patents

Board processing device

Info

Publication number
JP2001338967A
JP2001338967A JP2000157909A JP2000157909A JP2001338967A JP 2001338967 A JP2001338967 A JP 2001338967A JP 2000157909 A JP2000157909 A JP 2000157909A JP 2000157909 A JP2000157909 A JP 2000157909A JP 2001338967 A JP2001338967 A JP 2001338967A
Authority
JP
Japan
Prior art keywords
chamber
substrate
processing
measurement
load lock
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000157909A
Other languages
Japanese (ja)
Inventor
Tetsuaki Inada
哲明 稲田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Kokusai Electric Inc
Original Assignee
Hitachi Kokusai Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Kokusai Electric Inc filed Critical Hitachi Kokusai Electric Inc
Priority to JP2000157909A priority Critical patent/JP2001338967A/en
Publication of JP2001338967A publication Critical patent/JP2001338967A/en
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

PROBLEM TO BE SOLVED: To improve the quality of board processing by removing harmful matter adhering to the walls of an airtight chamber such as a load lock chamber, a carrying chamber and a processing chamber. SOLUTION: A plurality of the airtight chambers 1, 2, 3 in which boards 15 pass are provided, each airtight chamber has measuring ports 27, 28, 29, and a harmful matter detection device 31 can be connected to the measuring ports.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明はシリコンウェーハ、
ガラス基板等の基板に薄膜を生成し、又エッチングを行
い所要の回路を形成し、集積回路等の半導体装置を製造
する為の基板処理装置に関するものである。
The present invention relates to a silicon wafer,
The present invention relates to a substrate processing apparatus for forming a thin film on a substrate such as a glass substrate and performing etching to form a required circuit to manufacture a semiconductor device such as an integrated circuit.

【0002】[0002]

【従来の技術】図2に於いて、従来の基板処理装置につ
いて説明する。
2. Description of the Related Art A conventional substrate processing apparatus will be described with reference to FIG.

【0003】図2は枚葉式の基板処理装置の要部を示し
ており、気密な搬送室1に気密な処理室2、気密なロー
ドロック室3がそれぞれゲートバルブ4,5を介して各
複数(又は各1)連設され、前記ロードロック室3には
外部搬送装置(図示せず)との授受を行う為のゲートバ
ルブ6が設けられている。前記ロードロック室3は基板
15が装填されたカセット16を収納可能であり、前記
搬送室1には基板15を移載する為の基板移載機17が
設けられている。
FIG. 2 shows a main part of a single-wafer type substrate processing apparatus. An airtight transfer chamber 1 is provided with an airtight processing chamber 2 and an airtight load lock chamber 3 via gate valves 4 and 5, respectively. The load lock chamber 3 is provided with a plurality of (or one each) gate valves 6 for exchanging with an external transfer device (not shown). The load lock chamber 3 can store a cassette 16 loaded with a substrate 15, and the transfer chamber 1 is provided with a substrate transfer machine 17 for transferring the substrate 15.

【0004】又、前記搬送室1には給気ライン7、排気
ライン8、前記処理室2には給気ライン9、排気ライン
10、前記ロードロック室3には給気ライン11、排気
ライン12が連通され、前記搬送室1、処理室2、ロー
ドロック室3は前記給気ライン7,9,11を介して図
示しないガス供給源に接続され、又前記排気ライン8,
10,12を介して図示しない排気装置に接続され、処
理工程に応じて、反応ガス、窒素ガス等の不活性ガスが
供給され、又排気される様になっている。
The transfer chamber 1 has an air supply line 7 and an exhaust line 8, the processing chamber 2 has an air supply line 9 and an exhaust line 10, and the load lock chamber 3 has an air supply line 11 and an exhaust line 12. The transfer chamber 1, the processing chamber 2, and the load lock chamber 3 are connected to a gas supply source (not shown) through the air supply lines 7, 9, 11, and the exhaust line 8,
It is connected to an exhaust device (not shown) via 10, 12 so that an inert gas such as a reaction gas or a nitrogen gas is supplied and exhausted according to the processing step.

【0005】以下、基板処理工程の概略を説明する。Hereinafter, an outline of the substrate processing step will be described.

【0006】大気状態の前記ロードロック室3に外部搬
送装置(図示せず)から前記ゲートバルブ6を通して前
記カセット16が搬入される。該カセット16には処理
すべき基板15が装填されている。前記ゲートバルブ
6、ゲートバルブ5が閉じられた状態で前記ロードロッ
ク室3が前記排気ライン12を介して真空引きされ、前
記搬送室1と同雰囲気とされる。前記ゲートバルブ4が
閉じられた状態で前記ゲートバルブ5が開かれ、前記ウ
ェーハ移載機17により前記基板15が前記カセット1
6より前記搬送室1内に搬入され、前記ゲートバルブ5
が閉じられ、前記ゲートバルブ4が開かれ前記基板15
が前記処理室2内の基板載置台(図示せず)に移載され
る。
[0006] The cassette 16 is carried into the load lock chamber 3 in the atmospheric state from the external transfer device (not shown) through the gate valve 6. The cassette 16 is loaded with substrates 15 to be processed. With the gate valve 6 and the gate valve 5 closed, the load lock chamber 3 is evacuated through the exhaust line 12 to have the same atmosphere as the transfer chamber 1. With the gate valve 4 closed, the gate valve 5 is opened, and the wafer transfer device 17 removes the substrate 15 from the cassette 1.
6 and is carried into the transfer chamber 1 by the gate valve 5.
Is closed, the gate valve 4 is opened, and the substrate 15 is closed.
Is transferred to a substrate mounting table (not shown) in the processing chamber 2.

【0007】前記ゲートバルブ4が閉じられ、前記給気
ライン9より前記処理室2に反応ガスが供給され、前記
基板15に対して成膜、エッチング等所要の処理が成さ
れる。処理完了後、前記処理室2が前記排気ライン10
より真空引きされ、或は不活性ガスによるガスパージが
行われる。
The gate valve 4 is closed, a reaction gas is supplied from the gas supply line 9 to the processing chamber 2, and required processing such as film formation and etching is performed on the substrate 15. After the processing is completed, the processing chamber 2 is connected to the exhaust line 10.
The air is further evacuated, or a gas purge with an inert gas is performed.

【0008】前記処理室2と前記搬送室1とが同雰囲気
とされた後、前記ゲートバルブ4が開かれ、前記ウェー
ハ移載機17により前記基板15が前記処理室2から搬
送室1に払出され、前記ゲートバルブ4が閉じられた後
前記ゲートバルブ5が開かれ、前記基板15が前記カセ
ット16に移載される。未処理の基板15がカセット1
6より前記搬送室1内に搬入され、上記処理工程が繰返
される。
After the processing chamber 2 and the transfer chamber 1 have the same atmosphere, the gate valve 4 is opened, and the substrate 15 is discharged from the processing chamber 2 to the transfer chamber 1 by the wafer transfer device 17. Then, after the gate valve 4 is closed, the gate valve 5 is opened, and the substrate 15 is transferred to the cassette 16. Unprocessed substrate 15 is in cassette 1
6 and is carried into the transfer chamber 1, and the above-described processing steps are repeated.

【0009】予定枚数の基板15の処理が完了すると、
前記ゲートバルブ5が閉じられ、前記給気ライン11よ
り不活性ガスが供給され、前記ロードロック室3内が大
気圧に復帰し、前記ゲートバルブ6が開かれ、図示しな
い外部搬送装置により前記カセット16が搬出される。
When the processing of the predetermined number of substrates 15 is completed,
The gate valve 5 is closed, an inert gas is supplied from the air supply line 11, the inside of the load lock chamber 3 returns to atmospheric pressure, the gate valve 6 is opened, and the cassette is opened by an external transfer device (not shown). 16 is carried out.

【0010】[0010]

【発明が解決しようとする課題】上記処理工程に於い
て、前記ロードロック室3、搬送室1、処理室2内には
基板15表面に付着した水分、有機物が基板15の搬入
と共に持込まれ、又反応ガス、不活性ガス等のガス中に
含まれる水分、有機物がガス供給によって持込まれる。
持込まれた水分、有機物は前記ロードロック室3、搬送
室1、処理室2の壁面に付着する。
In the above-mentioned processing steps, moisture and organic substances adhering to the surface of the substrate 15 are brought into the load lock chamber 3, the transfer chamber 1, and the processing chamber 2 together with the loading of the substrate 15, In addition, moisture and organic substances contained in gases such as a reaction gas and an inert gas are brought in by gas supply.
The introduced moisture and organic substances adhere to the wall surfaces of the load lock chamber 3, the transfer chamber 1, and the processing chamber 2.

【0011】付着した水分、有機物はやがて壁面から離
反、脱離し、基板に付着することとなる。付着した水
分、有機物は基板処理に於いて有害物質であり、処理品
質を低下させる。
The adhering moisture and organic substances eventually separate from and separate from the wall surface and adhere to the substrate. The attached moisture and organic substances are harmful substances in the substrate processing and lower the processing quality.

【0012】本発明は斯かる実情に鑑み、ロードロック
室、搬送室、処理室等気密室の壁面に付着した有害物質
を除去し、基板処理の品質を向上しようとするものであ
る。
In view of such circumstances, the present invention is intended to remove harmful substances attached to the walls of an airtight chamber such as a load lock chamber, a transfer chamber, and a processing chamber, and to improve the quality of substrate processing.

【0013】[0013]

【課題を解決するための手段】本発明は、基板が通過す
る複数の気密室を具備し、各気密室が測定用ポートを有
し、該測定用ポートに有害物検出装置を接続可能とした
基板処理装置に係るものである。
According to the present invention, a plurality of hermetic chambers through which a substrate passes are provided, each hermetic chamber has a measurement port, and a harmful substance detection device can be connected to the measurement port. The present invention relates to a substrate processing apparatus.

【0014】[0014]

【発明の実施の形態】以下、図面を参照しつつ本発明の
実施の形態を説明する。
Embodiments of the present invention will be described below with reference to the drawings.

【0015】図1中、図2中で示したものと同一のもの
には同符号を付しその説明を省略する。
In FIG. 1, the same components as those shown in FIG. 2 are denoted by the same reference numerals, and description thereof will be omitted.

【0016】搬送室1、処理室2、ロードロック室3に
はそれぞれ室内を過熱するベーキングヒータ18,1
9,20が取付けられる。又、排気ライン8にはストッ
プバルブ21、接続フランジ22を有する測定ポート2
7が設けられ、排気ライン10にはストップバルブ2
3、接続フランジ24を有する測定ポート28が設けら
れ、排気ライン12にはストップバルブ25、接続フラ
ンジ26を有する測定ポート29が設けられる。
Each of the transfer chamber 1, the processing chamber 2, and the load lock chamber 3 has a baking heater 18, 1 for overheating the room.
9 and 20 are attached. The exhaust line 8 has a measurement port 2 having a stop valve 21 and a connection flange 22.
The exhaust line 10 is provided with a stop valve 2.
3. A measurement port 28 having a connection flange 24 is provided, and a stop valve 25 and a measurement port 29 having a connection flange 26 are provided in the exhaust line 12.

【0017】前記測定ポート27、測定ポート28、測
定ポート29には有害物検出装置31が着脱可能とす
る。該有害物検出装置31は携帯可能な構造とするか、
或は台車等に設置し、移動可能な構造とする。
A harmful substance detecting device 31 can be attached to and detached from the measuring ports 27, 28 and 29. Whether the harmful substance detection device 31 has a portable structure,
Or, it is installed on a trolley or the like and has a movable structure.

【0018】該有害物検出装置31について説明する。The harmful substance detecting device 31 will be described.

【0019】気密な測定用チャンバ32はベローズ管等
屈撓性のある接続管33が接続され、該接続管33の先
端には前記接続フランジ22、接続フランジ24、接続
フランジ26に着脱可能な接続フランジ34が固着され
ている。前記測定用チャンバ32には分析器35が接続
され、又吸引ポンプ36が接続され、該吸引ポンプ36
は排気管37を介して図示しない排気装置に接続されて
いる。
A flexible connection pipe 33 such as a bellows pipe is connected to the airtight measurement chamber 32. The connection pipe 33 has a distal end connected to the connection flange 22, the connection flange 24, and the connection flange 26 detachably. The flange 34 is fixed. An analyzer 35 is connected to the measurement chamber 32, and a suction pump 36 is connected to the suction pump 36.
Is connected to an exhaust device (not shown) via an exhaust pipe 37.

【0020】前述した様に、基板処理を繰返すと、前記
ロードロック室3、搬送室1、処理室2内には基板15
表面に付着した水分、有機物が該基板15の搬入と共に
持込まれ、又反応ガス、不活性ガス等のガス中に含まれ
る水分、有機物がガス供給によって持込まれる。持込ま
れた水分、有機物は前記ロードロック室3、搬送室1、
処理室2の壁面に付着する。尚、基板が処理されている
状態では、前記ストップバルブ21、ストップバルブ2
3、ストップバルブ25は閉塞されている。
As described above, when the substrate processing is repeated, the substrate 15 is stored in the load lock chamber 3, the transfer chamber 1, and the processing chamber 2.
Moisture and organic substances adhering to the surface are brought in with the carry-in of the substrate 15, and moisture and organic substances contained in gases such as a reaction gas and an inert gas are brought in by gas supply. The introduced moisture and organic matter are stored in the load lock chamber 3, the transfer chamber 1,
It adheres to the wall surface of the processing chamber 2. In the state where the substrate is being processed, the stop valve 21 and the stop valve 2 are used.
3. The stop valve 25 is closed.

【0021】基板処理装置の稼働時間が所定時間に達し
た場合、或は定期的に、或はメンテナンス時に前記有害
物検出装置31を前記測定ポート27、測定ポート2
8、測定ポート29のいずれか、例えば測定ポート28
に接続する。接続は前記接続フランジ34と、前記接続
フランジ24とをボルトにより気密に固着する。
When the operating time of the substrate processing apparatus has reached a predetermined time, or periodically, or during maintenance, the harmful substance detection device 31 is connected to the measurement port 27 and the measurement port 2.
8, one of the measurement ports 29, for example, the measurement port 28
Connect to For connection, the connection flange 34 and the connection flange 24 are air-tightly fixed by bolts.

【0022】前記有害物検出装置31の接続後前記スト
ップバルブ23を開き、前記吸引ポンプ36を駆動して
前記処理室2内のガスを吸引する。吸引されたガスは前
記測定用チャンバ32を経て排気され、前記分析器35
は前記測定用チャンバ32内のガスの成分分析を行い、
ガス中に水分、有機物があるかどうかを測定する。測定
で、水分、有機物が検出された場合、或は検出量が所定
量を越えた場合は、検出結果を測定者に警告する。警告
する手段としては、ブザー、ランプ等適宜な機器が用い
られる。
After the harmful substance detecting device 31 is connected, the stop valve 23 is opened, and the suction pump 36 is driven to suck the gas in the processing chamber 2. The sucked gas is exhausted through the measurement chamber 32, and the analyzer 35
Performs a component analysis of the gas in the measurement chamber 32,
Measure whether there is moisture or organic matter in the gas. When moisture and organic substances are detected in the measurement, or when the detected amount exceeds a predetermined amount, the measurement result is warned to the measurer. Appropriate equipment such as a buzzer and a lamp is used as a warning means.

【0023】測定は、前記搬送室1、ロードロック室3
等、基板が通過する全ての室について行われる。
The measurement is performed in the transfer chamber 1 and the load lock chamber 3.
And so on for all chambers through which the substrate passes.

【0024】例えば、前記処理室2の測定の結果、水
分、有機物が検出された場合、或は検出量が所定量を越
えた場合は、前記ベーキングヒータ19により前記処理
室2の過熱が行われ、又過熱と同時に前記吸引ポンプ3
6による真空引きが行われると共に給気ライン9より窒
素ガス等の不活性ガスが供給され、前記処理室2に付着
した水分、有機物の除去が行われる。
For example, when moisture and organic substances are detected as a result of the measurement in the processing chamber 2 or when the detected amount exceeds a predetermined amount, the processing chamber 2 is overheated by the baking heater 19. , And simultaneously with overheating, the suction pump 3
6 and an inert gas such as nitrogen gas is supplied from an air supply line 9 to remove moisture and organic substances adhering to the processing chamber 2.

【0025】ベーキングによる水分、有機物の除去は、
前記搬送室1、ロードロック室3についても同様に行わ
れる。
Removal of water and organic matter by baking
The same applies to the transfer chamber 1 and the load lock chamber 3.

【0026】水分、有機物が壁面から離反、脱離する前
にベーキングにより除去するので、基板に水分、有機物
が付着することなく、基板処理の品質、信頼性が向上す
る。
Since moisture and organic substances are removed by baking before separating and desorbing from the wall surface, moisture and organic substances do not adhere to the substrate, and the quality and reliability of substrate processing are improved.

【0027】尚、上記実施の形態では、前記有害物検出
装置31を前記測定ポート27、測定ポート28、測定
ポート29に付替えて該当する室の水分、有機物の測定
を行ったが、前記有害物検出装置31を測定する室の数
だけ用意し、全ての測定ポートに該有害物検出装置31
を取付けてもよい。又、1組の該有害物検出装置31を
用意し、分岐管により全ての測定ポート27,28,2
9に接続し、測定対象の室の測定ポートのストップバル
ブを開いて測定する様にしてもよい。
In the above embodiment, the harmful substance detection device 31 was replaced with the measurement port 27, the measurement port 28, and the measurement port 29 to measure the moisture and the organic substance in the corresponding chamber. As many as the number of rooms for measuring the object detectors 31 are prepared, and the harmful object detectors 31 are connected to all measurement ports.
May be attached. Also, one set of the harmful substance detection device 31 is prepared, and all the measurement ports 27, 28, and 2 are connected by the branch pipe.
9, the measurement valve may be opened by opening the stop valve of the measurement port of the chamber to be measured.

【0028】又、全ての測定ポート27,28,29に
それぞれ有害物検出装置31を接続する場合、分岐管を
介して全ての測定ポートに有害物検出装置31を接続す
る場合は、ストップバルブを電磁弁とし、該電磁弁を基
板処理装置の制御装置により制御し、所定稼働時間毎に
開閉し、室の水分、有機物を測定する様にし、この測定
結果を基に前記ベーキングヒータ19、吸引ポンプ36
を作動させ、ベーキングを行う様にしてもよい。更に、
前記分析器35を前記排気ライン8、排気ライン10、
排気ライン12に直接取付け、排ガス中の水分、有機物
を常時監視してもよい。
When the harmful substance detecting device 31 is connected to all the measuring ports 27, 28, and 29, respectively, and when the harmful substance detecting device 31 is connected to all the measuring ports via branch pipes, the stop valve is provided. The solenoid valve is controlled by a control device of the substrate processing apparatus, and is opened and closed every predetermined operation time to measure moisture and organic matter in the chamber. Based on the measurement result, the baking heater 19 and the suction pump are used. 36
May be operated to perform baking. Furthermore,
The analyzer 35 is connected to the exhaust line 8, the exhaust line 10,
It may be directly attached to the exhaust line 12 to constantly monitor moisture and organic substances in the exhaust gas.

【0029】[0029]

【発明の効果】以上述べた如く本発明によれば、基板が
通過する複数の気密室を具備し、各気密室が測定用ポー
トを有し、該測定用ポートに有害物検出装置を接続可能
としたので、基板表面に付着して基板の搬入と共に室内
に持込まれ、又反応ガス、不活性ガス等のガス中に含ま
れ、ガス供給によって室内に持込まれた水分、有機物が
基板を汚染する前にベーキングなどの処理により除去可
能となるので、基板の処理品質、信頼性が向上する等の
優れた効果を発揮する。
As described above, according to the present invention, a plurality of hermetic chambers through which a substrate passes are provided, each hermetic chamber has a measurement port, and a harmful substance detection device can be connected to the measurement port. Therefore, it adheres to the substrate surface and is brought into the room when the substrate is carried in, and is contained in a gas such as a reactive gas or an inert gas, and water and organic substances brought into the room by gas supply contaminate the substrate. Since it can be removed by a process such as baking before, an excellent effect such as improvement of the processing quality and reliability of the substrate is exhibited.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の実施の形態を示す概略説明図である。FIG. 1 is a schematic explanatory view showing an embodiment of the present invention.

【図2】従来例の概略説明図である。FIG. 2 is a schematic explanatory view of a conventional example.

【符号の説明】[Explanation of symbols]

1 搬送室 2 処理室 3 ロードロック室 18 ベーキングヒータ 19 ベーキングヒータ 20 ベーキングヒータ 21 ストップバルブ 23 ストップバルブ 25 ストップバルブ 27 測定ポート 28 測定ポート 29 測定ポート 31 有害物検出装置 35 分析器 Reference Signs List 1 transfer chamber 2 processing chamber 3 load lock chamber 18 baking heater 19 baking heater 20 baking heater 21 stop valve 23 stop valve 25 stop valve 27 measurement port 28 measurement port 29 measurement port 31 harmful substance detection device 35 analyzer

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 基板が通過する複数の気密室を具備し、
各気密室が測定用ポートを有し、該測定用ポートに有害
物検出装置を接続可能としたことを特徴とする基板処理
装置。
A plurality of airtight chambers through which a substrate passes;
A substrate processing apparatus, wherein each airtight chamber has a measurement port, and a harmful substance detection device can be connected to the measurement port.
JP2000157909A 2000-05-29 2000-05-29 Board processing device Pending JP2001338967A (en)

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