JP2009123723A - Vacuum treatment apparatus or method for vacuum treatment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a vacuum treatment apparatus or a method for vacuum treatment which enhances the efficiency of treatment by controlling the contamination of a treatment object sample caused by dust particles. <P>SOLUTION: A vacuum treatment apparatus comprising an internally decompressed treatment chamber for treating an article in the shape of a substrate, an introduction chamber for importing or exporting an article into or from the treatment apparatus, and an internally-decompressed conveyance chamber for delivering the article between the treatment chamber and the introduction chamber is further provided with an intermediate chamber arranged between the conveyance chamber and the treatment chamber, joints arranged among the conveyance chamber, the intermediate chamber and the treatment chamber, respectively, and each having an opening through which the article is carried in, valves for opening and closing openings of these joints airtightly, and a pressure adjusting means which can adjust the pressure of the intermediate chamber independently from the conveyance chamber and the treatment chamber. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a vacuum processing apparatus or a vacuum processing method for processing a substrate-like sample such as a semiconductor wafer, which is an object to be processed, disposed inside the decompressed processing chamber, and in particular, generated in the processing chamber. The present invention relates to a vacuum processing apparatus or a vacuum processing method for suppressing foreign matter to be generated.

  In the above vacuum processing apparatus, for example, a plasma processing apparatus that processes a substrate-like sample such as a semiconductor wafer using plasma or the like formed while supplying a processing gas into a processing chamber disposed in a vacuum vessel, This is caused by adhesion of fine particles such as reaction products formed by the interaction between the plasma and the sample during the treatment in order to improve the yield of products such as semiconductor devices obtained after the treatment and the semiconductor devices obtained after the treatment. Suppressing foreign matter has become an important issue, and conventionally, means for reducing such foreign matter have been proposed. In general, plasma cleaning that uses plasma to cause an interaction between the plasma and deposits from the deposited products to remove these deposits chemically or physically, and the inside of the vacuum vessel is large. A combination with so-called WET cleaning, in which the surface of the processing chamber is opened by wiping under atmospheric pressure and cleaned, has been used as a means for reducing the foreign matter.

  On the other hand, fine particles adhering to the inner wall surface of the processing chamber are removed by using electrostatic force, or fine particles are removed using fluid force by introducing gas, or thermophoretic force is used. Things have been proposed. As such a conventional technique, one disclosed in Japanese Patent Laid-Open No. 2005-101539 (Patent Document 1) is known. It has been conventionally performed to reduce foreign matters by variously combining these conventionally known methods.

  That is, the deposits resulting from the accumulation of fine particles on the wall surface in the processing chamber are peeled off again, and this stripped product adheres to the surface of the sample in the processing chamber and contaminates it. It is believed that. Therefore, in the above prior art, in order to reduce the foreign matter, the fine particles adhering to the inner wall of the processing chamber or the surface of the component facing the plasma are utilized by electrostatic force, fluid force or thermophoresis force. For example, it is disclosed that the material is forcibly separated and the separated material is discharged to the outside of the processing chamber by placing it on a fluid flow formed in the processing chamber. In this way, if the fine particles adhering to the wall surface can be removed and reduced in advance, the adhering fine particles are peeled off during the actual processing of the sample or during the transportation of the sample to form a foreign material. Contamination of the surface is suppressed.

  As described above, the occurrence of foreign matter indicates that a phenomenon has occurred in which the fine particles adhering to the processing chamber wall of the apparatus or the surface of the component are separated by some force during the processing and transported to the workpiece. ing. From this, it is considered that the generation of the foreign matter can be reduced by cutting off the adhesion path and process from the source of the foreign matter to the surface of the sample.

  As a method for reducing such foreign matter, a gas purge that has been conventionally employed in plasma processing apparatuses is known. In this method, after the WET cleaning, an operation of introducing and exhausting a gas having a larger flow rate at a pressure higher than that during normal processing or standby is repeated. As a result, the fine particles adhering to the wall surface are separated from the wall surface by the fluid action of the gas, placed on the gas flow, and discharged to the outside of the processing chamber. Japanese Patent Application Laid-Open No. H10-228561 discloses a gas purge performed by supplying a purge gas from a gas supply unit connected to the process chamber into the process chamber.

  Further, Japanese Patent Application Laid-Open No. 8-511848 (Patent Document 2) discloses a gas supply system different from a system for supplying a processing gas to a processing chamber and a gas supplied by this separate supply system. The technology provided with the gas purge apparatus provided with the pump of this is disclosed.

JP 2005-101539 A Japanese National Patent Publication No. 8-511848

  In the above conventional technique, the following points have not been fully considered. That is, in order to separate and remove the attached fine particles by the fluid force of the gas, it is required to introduce a gas with a higher flow rate at a higher pressure. However, it is difficult to supply a gas having a pressure and flow rate sufficient to realize such an action in a processing apparatus including a vacuum vessel that has been used conventionally.

  In particular, in a vacuum processing apparatus that processes a film on the surface of a semiconductor wafer made of silicon in order to manufacture a semiconductor device, if the diameter of the wafer is 300 mm or more, the processing non-uniformity is large in the in-plane direction of the wafer surface. turn into. For this reason, conventionally, processing gas has been widely distributed in the in-plane direction of the wafer to correct processing non-uniformity.

  However, the adjustment of the gas supply into the processing chamber is performed by supplying a small number of supply fine diameters arranged on a circular shower plate having a diameter larger than that of the wafer arranged above and parallel to the wafer. The processing gas is dispersed from the opening of the hole toward the surface of the wafer. When processing gas is supplied from such a small diameter opening, it is difficult to increase the pressure and flow rate because the conductance is limited. For this reason, even if the gas introduction into the processing chamber is performed from the shower plate, a steady gas flow is obtained, so that the fluid force is insufficient to remove the adhered particles. It wasn't.

  That is, by removing particles adhering to the walls of the processing chamber and the surfaces of the indoor parts, the particles adhering to the processing chamber were supplied from the outside in order to ultimately reduce foreign substances in the vacuum processing apparatus. When attempting to remove by gas, a force superior to the force (adhesion force) to which particles are attached must be applied from the gas. However, according to the fluid dynamics in the laminar flow state, the gas flow velocity is zero on the surface of the stationary wall surrounding the gas flow, and the flow velocity of the so-called gas flow is within a certain distance from the wall surface. become. For this reason, when the size of the adhering particle is smaller than the height of the transition region of the gas flow, the fluid force due to the gas does not act, and the force for separating the deposit due to the fluid force is effective. Does not work. Such small particles are called attached particles. In addition, depending on the flow, a sliding effect on the surface occurs, so that a fluid force acts on the attached fine particles. In such a case, it is difficult to remove the attached fine particles by a gas flow.

  Further, as disclosed in Patent Document 2, in order to remove attached fine particles by the force of fluid, it is considered to separately arrange a gas supply path and a supply port dedicated for removal. According to such a configuration, it is considered possible to supply the foreign matter suppressing gas at a higher pressure and a larger flow rate independently of the supply of the processing gas. On the other hand, in such a case, it is necessary to devise measures that do not damage the processing gas supply path and device and the vacuum exhaust path and device for exhausting the inside of the vacuum vessel.

  For example, when a gas supply system for removing the attached fine particles is disposed in the processing chamber, a flow controller such as a mass flow meter or a pressure gauge is used for purging (supplying) a large flow of gas at a high pressure. Is required. Furthermore, since the load of the purge gas acts on the shower plate for supplying the processing gas when supplying the purge gas, it is necessary to limit the pressure to a level at which the shower plate is not damaged.

  In addition, consideration must be given so that an exhaust device such as a turbo vacuum pump that exhausts the inside of the processing chamber due to a change in pressure due to the gas supplied into the processing chamber does not damage. For this reason, it is possible to adjust the rate of change in the rise of the pressure change due to the purge gas, or to adjust the purge gas supply to an initially low pressure so that an extremely rapid pressure increase does not occur. Necessary. Further, since reaction products in the processing chamber adhere to the path of the purge gas supply system, it is necessary to remove this in addition to the conventional cleaning of the processing apparatus, and the time required for cleaning is long. As a result, the operating rate is reduced.

  Furthermore, such gas purging is limited to specific occasions such as after WET cleaning, and in the process of processing a plurality of samples belonging to an arbitrary lot and increasing the number of sheets by the processing apparatus according to the above-described conventional technology. The point that it was difficult to perform the gas purge at an appropriate timing and thus extend the interval of the WET cleaning was not taken into consideration in the prior art.

  It is an object of the present invention to provide a vacuum processing apparatus or a vacuum processing method that suppresses the occurrence of contamination of a sample to be processed due to foreign matter and improves the processing efficiency.

  The object is to process a substrate-like object to be processed in a decompressed interior, an introduction chamber for carrying the object into or out of the processing apparatus, and the processing chamber and the introduction chamber to be decompressed inside. And a transfer chamber for delivering the object to be processed between the intermediate chamber disposed between the transfer chamber and the processing chamber, the transfer chamber, the intermediate chamber, and a processing chamber. A connecting portion disposed between each of the chambers and having an opening through which the workpiece is transported; a valve for opening and closing each of the opening of each of the connecting portions; and a pressure of the intermediate chamber being transported This is achieved by a vacuum processing apparatus having pressure adjusting means that can be adjusted independently of the chamber and the processing chamber.

  Alternatively, after processing the substrate-like object to be processed disposed inside the decompressed processing chamber, the intermediate chamber connected to the processing chamber and the interior of the transport chamber connected to the intermediate chamber and decompressed A vacuum processing method for carrying out the processed object after processing, wherein the intermediate chamber is partitioned from the transfer chamber and the processing chamber, and the internal pressure is adjusted independently of these, and then the processed object is transferred. Achieved by the method.

  Furthermore, this is achieved by providing a function of opening a valve disposed between the intermediate chamber and the processing chamber in a state where the pressure in the intermediate chamber is higher than the pressure in the processing chamber.

  Furthermore, this is achieved by opening the valve in a state where the pressure in the intermediate chamber is at least twice as high as the pressure in the processing chamber connected by the connecting portion.

  Furthermore, this is achieved by providing a heater for heating the gas supplied into the intermediate chamber.

  The embodiment of the present invention described below includes an intermediate chamber into which gas is supplied between a transport chamber in which a sample is transported through a decompressed interior and a processing chamber in a vacuum vessel connected thereto. By arranging and adjusting the pressure in the intermediate chamber independently of the transfer chamber and the processing chamber, contamination of the sample to be processed due to foreign matters is suppressed. That is, a passage that connects the processing chamber and the intermediate chamber at a predetermined timing by increasing the pressure of the intermediate chamber to a predetermined pressure while processing the sample that is the object to be processed in the processing chamber. By opening a gate valve (hereinafter referred to as a valve) that opens and closes airtightly, gas flows in as a shock wave from the intermediate chamber toward the processing chamber through a minute gap formed between the valve and the opening of the passage. The force acting on the adhering fine particles from the shock wave is larger than the force due to the steady flow of the gas supplied from the above-described shower plate or purge gas supply port, and the adhering fine particles are efficiently separated from the adhering surface and removed.

  In addition, by performing a gas purge from the intermediate chamber disposed on the transfer path between the transfer chamber and the processing chamber to the processing chamber together with the transfer of the sample, there is no need to perform a specific gas purging step, and the sample processing can be performed. Efficiency is improved. In addition, when removing adhering fine particles by gas purge after WET cleaning, moisture in the atmosphere adheres to the wall surface of the processing chamber when the processing chamber is opened to the atmosphere. In the embodiment described below, a heater for heating the gas to a high temperature is arranged on the supply path for supplying the gas to the intermediate chamber, and the high temperature gas is supplied into the processing chamber through the intermediate chamber, thereby attaching the gas. Moisture is removed at the same time as the removal of the fine particles, so that the time until the processing of the vacuum processing apparatus after reopening to the atmosphere can be shortened.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  Embodiments of the present invention will be described below with reference to FIGS. FIG. 1 is a longitudinal sectional view schematically showing an outline of a configuration of a vacuum processing apparatus according to an embodiment of the present invention. FIG. 2 is a top view schematically showing the outline of the configuration of the embodiment shown in FIG.

  The vacuum processing apparatus shown in FIG. 1 is a vacuum in which samples on a substrate such as a semiconductor wafer, which is an object to be processed, are transferred one by one from atmospheric pressure to a processing chamber, and after processing are unloaded from the processing chamber and returned to atmospheric pressure. The outline of the composition of a processing device is shown typically. In this figure, a vacuum processing chamber 1 is a space disposed inside a vacuum vessel, and a semiconductor wafer is transported and installed therein, and a processing gas, electric field supply means, magnetic field supply means (not shown), Plasma is formed by the interaction with the electric field and magnetic field supplied by, thereby forming a processing space in which the semiconductor wafer is processed by the plasma.

  In the processing chamber 1, there is disposed a sample stage on which a semiconductor wafer is placed on the upper surface and held by being attracted by electrostatic force. Further, the processing chamber 1 is connected to a transfer chamber 3 in which a semiconductor wafer is transferred by a vacuum robot 31 having a robot arm through a decompressed inside of the container.

  On the path connecting between the transfer chamber 3 and the processing chamber 1, an intermediate chamber 4 is disposed between the processing chamber 1 and the transfer chamber 3, and the transfer chamber 3, the intermediate chamber 4, and the intermediate chamber are arranged. 4 and the processing chamber 1 are connected by a passage in which the semiconductor wafer is transported in a decompressed state so that the interiors of the chambers can communicate with each other. These passages, which are gates through which the wafer passes, are opened and closed by valves 7 and 8 driven by actuators (not shown). Although not shown, these valves 7 and 8 surround the outer peripheral side of the opening in a closed state on the surface in contact with the opening so that the passage opening can be hermetically sealed. A ring-shaped seal portion for sealing with is arranged.

  Also, in the figure, on the opposite side of the processing chamber 1 across the transfer chamber 3, a semiconductor wafer is provided between the inside of the reduced transfer chamber 3 and a space under atmospheric pressure so that the semiconductor wafer can be transferred. An introduction chamber 2 that is a space in a vacuum vessel in which the internal pressure can be increased / decreased while being accommodated inside is disposed. The introduction chamber 2 and the atmosphere side of the introduction chamber 2 are connected to the inside of the introduction chamber 2 and a passage through which the semiconductor wafer is conveyed is connected to the inside of the introduction chamber 2 and a space under atmospheric pressure. And the inside of the introduction chamber 2 and the inside of the transfer chamber 3 are configured to communicate with each other.

  Further, valves 5 and 6 for partitioning the inside of the introduction chamber 2 from the outside are arranged on each passage. Like the valves 7 and 8, these valves 5 and 6 are on the surface in contact with the opening so that the opening can be hermetically sealed while opening and closing the passage and closing the opening (not shown). A ring-shaped seal portion is disposed so as to surround and seal the outer peripheral side of the opening in a closed state. A sample holder (not shown) is disposed in the introduction chamber 2 that communicates with the inside of the transfer chamber 3. With the semiconductor wafer held on the sample holder, the valves 5 and 6 are closed to hermetically seal the inside. After stopping, increase or decrease the internal pressure. For example, an unprocessed semiconductor wafer transferred from a semiconductor wafer transfer robot under atmospheric pressure is placed on the sample stage in the introduction chamber 2 with the valve 6 closed. After closing the valve 5, the inside of the introduction chamber 2 is evacuated by a vacuum exhaust device 9 including a vacuum pump, and the pressure is reduced to a pressure equivalent to the pressure inside the transfer chamber 3. Thereafter, the valve 6 is opened, and the semiconductor wafer is taken out from the introduction chamber 2 by the robot arm of the vacuum robot 31 in the transfer chamber 3 and carried into the processing chamber 1 through the intermediate chamber 4. That is, the introduction chamber 2 of this embodiment is used for both loading and unloading of semiconductor wafers between the space under atmospheric pressure and the processing chamber 1 and the transfer chamber 3.

  After the semiconductor wafer is processed in the processing chamber 1, conversely, the processed semiconductor wafer is transferred from the processing chamber 1 into the introduction chamber 2 through the intermediate chamber 4 and the transfer chamber 3 by the vacuum robot 31. To be placed on the sample stage. After the valve 6 is closed, gas is supplied into the introduction chamber 2 and the internal pressure rises to a pressure equivalent to the atmospheric pressure. Then, the valve 5 is opened and the semiconductor wafer is carried out of the introduction chamber 2.

  Although FIG. 1 shows an example in which one processing chamber 1 and one introduction chamber 2 are provided, a vacuum vessel provided with the processing chamber 1 is arranged around a plurality of transfer chambers 3 to introduce the introduction chamber 2 in FIG. As a configuration in which an unloading chamber dedicated for unloading is arranged with the same configuration as that described above and the introduction chamber 2 is used only for loading, chambers in vacuum chambers dedicated to loading and unloading wafers may be used. An example of such a configuration will be described with reference to FIG. FIG. 2 is a top view schematically showing the configuration of the vacuum processing apparatus of the embodiment shown in FIG. 1, and the side walls constituting the three sides of the vacuum container constituting the transfer chamber 3 having a hexagonal plan shape. An example is shown in which a vacuum container containing the processing chamber 1 is connected to each.

  That is, in this figure, the processing chambers 1a, 1b, and 1c are connected with the transfer chamber 3 and the intermediate chambers 4a, 4b, and 4c interposed therebetween. Further, a path connecting and connecting the intermediate chambers 4a, 4b, and 4c and the transfer chamber 3 and a path connecting and connecting the intermediate chambers 4a, 4b, and 4c and the processing chambers 1a, 1b, and 1c. The valves 7a, 7b, and 7c and the valves 8a, 8b, and 8c are disposed above, and the openings of the passages constituting these paths are hermetically sealed or opened. In addition, the introduction chamber 2 includes a carry-in chamber 2a dedicated to carry-in semiconductor wafers and a carry-out chamber 2b dedicated to carry-out, which are connected to the side walls of the remaining two hexagonal sides of the transfer chamber 3 through valves 6a and 6b. Yes.

  Since the operations of carrying out and carrying in the semiconductor wafer to and from the plurality of processing chambers 1a, 1b, and 1c are the same as those in FIG. 1, a description will be given below with reference to FIG. 1 and 2, a space under atmospheric pressure is arranged on the atmosphere side of the introduction chamber 2 (carry-in chamber 2a, carry-out chamber 2b). It is a space inside a building user of a device such as a clean room to be installed and is an atmosphere of a vacuum processing device. Like the conventional vacuum processing device, a rectangular parallelepiped is formed at the tip of the passage on the atmosphere side of the introduction chamber 2. An atmospheric transfer container having an atmospheric transfer chamber, which is a space for transferring semiconductor wafers under atmospheric pressure and has a shape that can be considered, is connected to the front surface, and a cassette capable of storing a plurality of semiconductor wafers is mounted on the front surface thereof. An atmosphere transfer chamber provided with a plurality of mounts that can be placed and the inside of the introduction chamber 2 are configured to be connectable, and the valve 5 (5a, 5b) partitions the space between them so as to be hermetically opened and closed. Needless to say, you may.

  In the present embodiment, each of the processing chamber 1, the introduction chamber 2, the transfer chamber 3, and the intermediate chamber 4 is provided with an evacuation system and a gas supply system capable of evacuating the interior of the chamber and reducing the pressure. The evacuation system has a evacuation device 9 including a valve 10 and a vacuum pump in the introduction chamber 2. The vacuum evacuation device 13 in the processing chamber 1 includes, for example, a turbo molecular pump and an auxiliary pump (dry pump) as a vacuum pump, and further has a flow rate adjusting valve. In this embodiment, the vacuum evacuation device 13 includes them. As shown. The vacuum exhaust devices 9 and 11 connected to other chambers have the same configuration.

  The intermediate chamber 4 is configured so as to be shared with the processing chamber 1 without disposing an independent dedicated chamber as an evacuation system, but may be disposed independently as in the other chambers. The pressure in each chamber is adjusted by adjusting the amount of gas supplied to each chamber.

  The pressure inside each of the processing chamber 1, the introduction chamber 2, the transfer chamber 3, and the intermediate chamber 4 is detected by vacuum gauges 15, 16, 17, and 18 arranged in each. When using vacuum gauges such as diaphragm vacuum gauges that do not favor high pressure loads, these vacuum gauges 15, 16, 17 and 18 are connected to each chamber via valves (not shown). In the case of this condition, the valves are closed to protect the vacuum gauges 15, 16, 17, and 18.

The gas supply system is indicated by a solid line connected to each chamber from the location indicated by “gas” and an arrow in FIG. 1, and when the decompressed chamber is opened to atmospheric pressure. A leakage path such as argon (Ar) or nitrogen (N ₂ ) may be used to adjust the gas composition in the room or suppress the retention of corrosive gas supplied as a processing gas. It may be a supply path of an inert gas that is always supplied indoors.

  The gas supply system includes a flow controller 24 and a valve 25 in the intermediate chamber 4. The same applies to the gas supply meters in the other chambers. In the introduction chamber 2, the supply flow rate or pressure is reduced at the initial stage of gas introduction, and the flow rate can be increased when the vacuum gauge 17 detects that a predetermined pressure has been reached. , Branch the supply path into two, and arrange two valves 20 and 21 with different conductances on each supply path, and adjust them to switch exclusively (from a valve with a small conductance to a large valve) Is done. In addition, valves having the same shape and structure as the valves 20 and 21 may be used, and orifices for differentiating conductances may be arranged in the middle of each path. A filter that suppresses the inflow of fine particles may be arranged.

  The gas supply system of the processing chamber 1 is configured to include a flow rate controller 26 and a valve 27, and also serves as a leak gas supply system used when the inside of the processing chamber 1 is opened to atmospheric pressure. Yes. On the other hand, a processing gas supply system is separately provided in the processing chamber 1 and includes a processing gas flow rate controller 28 and a valve 20. In this embodiment, a mixture of gases of a plurality of types is used, and the flow rate (speed) of supply of each gas constituting these processing gases is adjusted independently. Further, in the processing chamber 1, a flow rate adjusting valve is disposed on the upstream side (processing chamber 1 side) of the vacuum exhaust device 9 (not shown), and a control device (not shown) is configured based on the output from the vacuum gauge 18. The pressure in the processing chamber 1 is adjusted to a desired value range by adjusting the operation of the above and adjusting the exhaust speed in the processing chamber 1. Note that a control device (not shown) receives output signals from the respective sensors including the vacuum gauges 15, 16, 17, and 18 and sensors disposed in the vacuum vessel, and controls each chamber, supply system, and exhaust system. The operating state is detected, and an appropriate operating condition is selected or calculated according to a predetermined procedure based on the result of the detection, and transported by the vacuum robot 31 and the like of the vacuum processing apparatus of this embodiment. Commands for the means, gas supply system, processing gas supply system, evacuation system, and opening / closing operations of the valves 5, 6, 7, and 8 are transmitted to control the operation of each part of these vacuum processing apparatuses. The processing of the semiconductor wafer is appropriately controlled.

  In FIGS. 1 and 2, a sample stage, an electrostatic adsorption device, an antenna for supplying an electric field, a magnetron, a waveguide, and a magnetic field formation necessary for processing a semiconductor wafer in the processing chamber 1 are used. The configuration of the solenoid coil and the like is omitted. The processing chamber 1 may have other configurations. If the sample is processed in the processing chamber in the container whose inside is decompressed, the type of processing and the apparatus necessary for the processing are included. The configuration is not limited to the present embodiment.

  When processing is performed in the processing chamber 1, a reaction product remains in the processing chamber 1, or when processing using plasma is performed, the inner wall surface of the processing chamber 1 is formed by sputtering. Deposits adhere to the inner wall of the processing chamber 1. When the amount of deposit increases as the number of semiconductor wafers processed increases, the deposited deposit separates from the inner wall surface of the processing chamber 1 and is peeled off, flying in the space in the processing chamber 1. As a result, it adheres to the surface of the semiconductor wafer disposed inside as a foreign substance and contaminates it.

  In order to suppress this, it is necessary to clean the inside of the processing chamber 1 at an appropriate interval to remove deposits that become a foreign matter source. Hereinafter, the cleaning process in the plasma processing apparatus of this embodiment will be described.

  First, a process of transferring a semiconductor wafer into the processing chamber 1 will be described. When it is confirmed that the semiconductor wafer is not on the transfer path including the processing chamber 1, transfer of a new unprocessed semiconductor wafer is started. An introduction chamber 2 in which a specific semiconductor wafer stored in a cassette installed in front of an atmospheric transfer container in a space under atmospheric pressure is taken out of the cassette by a transfer robot disposed in the atmospheric transfer chamber and the valve 5 is opened. It is transported onto the sample stage and delivered to it. Thereafter, the valve 5 is closed, and the pressure in the introduction chamber 2 is reduced to a pressure that can be regarded as the same as that of the transfer chamber 3.

Note that the inside of the processing chamber 1 is closed by the valves 27 and 29 and exhausted by the operation of the vacuum exhaust system, and the pressure is reduced to a high degree of vacuum (for example, 10 ⁻³ to 10 ⁻⁴ Pa). The intermediate chamber 4 is supplied to the inert gas or the processing chamber 1 by opening the valve 30 and exhausting to the same high degree of vacuum and then closing the valve 30 and opening the valve 25 as a gas supply system. Ar gas, which is a dilution gas for the processing gas, is supplied. When the control device detects that the pressure in the intermediate chamber 4 starts to increase due to the supply of Ar gas and the pressure detected by the vacuum gauge 17 reaches a predetermined value, for example, 10 to 1000 Pa, the operation from the control device is performed. The valve 25 is closed based on the command signal. At this time, the interior of the intermediate chamber 4 is filled with Ar gas, and the state is maintained. On the other hand, Ar gas is similarly supplied to the transfer chamber 3 from the gas supply system, and the internal pressure is adjusted based on a command signal from the control device so as to be a predetermined value, for example, 10 to 100 Pa.

In this state, the valves 20 and 21 of the introduction chamber 2 are opened according to a predetermined sequence, and nitrogen (N ₂ ) gas is introduced to bring the inside to atmospheric pressure or a pressure equivalent thereto. Next, the valve 5 is opened, and an unprocessed semiconductor wafer is carried into the introduction chamber 2 under atmospheric pressure. Thereafter, the valve 5 is closed and the inside is hermetically sealed, the valve 10 is opened, and the inside of the inside is evacuated by the operation of the evacuating device 9.

  After the inside of the introduction chamber 2 is depressurized to a predetermined degree of vacuum, the valve 6 is opened and the vacuum robot 31 in the transfer chamber 3 carries the semiconductor wafer from the introduction chamber 2 into the transfer chamber 3. Thereafter, the valve 6 is closed and the transfer chamber 3 is partitioned from the introduction chamber 2. In this state, the valve 8 disposed between the intermediate chamber 4 and the processing chamber 1 is opened.

  At this time, since the pressure in the intermediate chamber 4 is set higher than the pressure in the processing chamber 1, the Ar gas in the intermediate chamber 4 is generated as a shock wave from the gap between the valve 8 and the opening of the passage at the moment when the valve 8 is opened. And flows into the processing chamber 1. A shock wave is generated when there is a double pressure difference between the two chambers in the case of Ar gas. The shock wave of Ar gas blows off adhering fine particles and deposits adhering to the wall surface of the processing chamber 1 and the surface of the component, and separates them from the wall surface and the surface of the component. The fine particles (deposits) separated from the surface are discharged out of the processing chamber 1 by the operation of the vacuum exhaust device 13 together with the Ar gas.

  The Ar gas stored in the intermediate chamber 4 flows in as a shock wave only for an extremely short time, but since the Ar gas is only for the volume of the intermediate chamber 4, the vacuum exhaust device 13 can perform a short time in the processing chamber 1. Thus, the pressure in the intermediate chamber 4 and the pressure in the processing chamber 1 are set to an approximate value that can be regarded as the same. In this state, the valve 7 disposed on the passage communicating between the transfer chamber 3 and the intermediate chamber 4 is opened according to a command from the control device.

  Since the gas was introduced into the transfer chamber 3 and the pressure in the transfer chamber 3 was maintained higher than the pressure in the processing chamber 1, the gas in the transfer chamber 3 was transferred into the processing chamber 1 and the intermediate chamber 4. Through the passage communicating with the intermediate chamber 4 and the passage communicating with the processing chamber 1 from the inside of the transfer chamber 3 into the intermediate chamber 4 and further into the processing chamber 1.

  For this reason, even if there is a processing gas remaining in the processing chamber 1 or a gas having a corrosive property due to the residue, the flow of these into the transfer chamber 3 is suppressed. With the valves 7 and 8 both opened, the vacuum robot 31 transports the semiconductor wafer to the processing chamber 1 and delivers it to a sample table (not shown) disposed in the processing chamber 1. After the vacuum robot 31 is retracted from the processing chamber 1 into the transfer chamber 3, the valve 7 is closed and the valve 8 is subsequently closed. Further, the semiconductor wafer is electrostatically attracted and held on the mounting surface on the sample table. In a state in which the valve 8 is closed and the inside of the processing chamber 1 is hermetically sealed, a processing gas whose flow rate (speed) is adjusted by the flow rate controller 28 is introduced into the processing chamber 1, and the plasma is processed into the processing chamber 1. The semiconductor wafer process is started and a predetermined process is performed.

  At this time, the pressure in the intermediate chamber 4 becomes a value within a range that can be regarded as the same as the pressure in the processing chamber 1 when the valve 7 is closed. Further, when the valve 8 is closed in the intermediate chamber 4, the valve 25 is opened, Ar gas is introduced from the gas supply system, and the pressure is maintained within a predetermined range, and this is maintained until the semiconductor wafer is transferred. Is done.

  While the processing of the semiconductor wafer is performed in the processing chamber 1, the semiconductor wafer to be processed next is taken out from the cassette along the same procedure as described above and is loaded into the transfer chamber 3. The vacuum robot 31 places a semiconductor wafer waiting for the next processing on the mounting part by disposing a wafer mounting part on each of a plurality of arms and providing two or more wafer holding means. In this state, the semiconductor wafer that has been processed by another arm can be carried out to the transfer chamber 3, and the transfer efficiency can be improved.

  When the processing of the semiconductor wafer in the processing chamber 1 is completed, in order to continue the processing of the next semiconductor wafer, the processing gas valve 29 is closed and the processing chamber 1 is evacuated again to reduce the pressure to a high vacuum level. The valve 8 is opened in a high vacuum state, and then the valve 7 is opened. When the valve 8 is opened, the adhered fine particles are removed by the aforementioned shock wave of the gas.

  With the valves 7 and 8 opened, the semiconductor wafer is unloaded from the processing chamber 1 into the transfer chamber 3. When this semiconductor wafer is drawn into the transfer chamber 3, another arm that has held the unprocessed semiconductor wafer immediately extends into the semiconductor wafer processing chamber 1 held as the next processing target by extending in the passage. This is transferred to a sample table not shown. After the semiconductor wafer is delivered, the arm is retracted and closed in the order of the valve 7 and the valve 8 to close the passage, the processing chamber 1 and the intermediate chamber 4, and the processing of the next semiconductor wafer is performed in the same manner as the above processing. Is started.

On the other hand, the semiconductor wafer which has been processed and is carried out into the transfer chamber 3 is transferred by the vacuum robot 31 into the introduction chamber 2 (the transfer chamber 2b in FIG. 2) with the valve 6 (the valve 6b in FIG. 2) opened. Will be delivered. When the valve 6 is closed and the inside of the introduction chamber (unloading chamber 2b) is hermetically sealed, the internal pressure increases up to a pressure within a range where N ₂ gas is introduced from the gas supply system and can be regarded as equivalent to the atmospheric pressure. After that, the valve 5 is opened, and the semiconductor wafer is carried out from the introduction chamber 2 to atmospheric pressure. The valve 5 is then closed and waits until the next semiconductor wafer is transferred.

  In the above-described embodiment, gas is introduced from the intermediate chamber 4 to the processing chamber 1 by a shock wave, so that the fine particles adhering to the wall surface and the surface of the member in the processing chamber 1 are separated from the surface and the processing chamber. 1 is exhausted and removed. As a result, the generation of foreign matter due to fine particles adhering during the processing of the semiconductor wafer is suppressed, and the processing yield is improved. In addition, cleaning by the shock wave is performed before the processing of the semiconductor wafer during the process of transporting the semiconductor wafer, so that the processing efficiency and the decrease in throughput due to the cleaning are suppressed.

  In the above-described embodiment, the cleaning by the shock wave is performed once every time the semiconductor wafer is carried in and out. On the other hand, after the WET cleaning inside the processing chamber 1, not only the residual fine particles being cleaned adhere to the wall surface of the processing chamber, but also the moisture in the atmosphere is adsorbed on the processing chamber wall surface because the processing chamber 1 is opened for standby. is doing. Therefore, the inside of the processing chamber 1 is evacuated to a high degree of vacuum, and a high-pressure and large-flow gas is introduced into the processing chamber 1 so that the processing chamber 1 is cleaned, and at the same time, the adsorbed moisture can be desorbed and removed. It is possible.

  At this time, it is conceivable to open the gas introduction system valve 27 connected to the processing chamber 1 in FIG. 1 and introduce the cleaning gas. When there are a large number of adhering fine particles as after the WET cleaning, Although it is necessary to supply a gas with a large flow rate, it is difficult to realize this when the cleaning gas supply system also serves as a processing gas supply system that realizes a steady flow.

  Therefore, in this embodiment, a large flow rate of gas is introduced into the processing chamber 1 a plurality of times from the gas supply system disposed in the intermediate chamber 4. By repeatedly opening and closing the valve 8 disposed on the passage communicating between the intermediate chamber 4 and the processing chamber 1 and increasing the pressure by introducing the gas into the intermediate chamber 4, the removal of the adhering fine particles is efficiently performed. To be implemented.

  When introducing a large amount of gas into the processing chamber 1, the valve 8 is repeatedly opened and closed, and the gas is repeatedly introduced into the processing chamber 1 through the intermediate chamber 4, so that a shock wave due to the gas is continuously introduced multiple times. can do. That is, the shock wave is intermittently performed within a predetermined period. As a result, the volume of the introduced gas is limited to the volume of the intermediate chamber 4 rather than continuously introducing a high pressure, large flow gas while adjusting it using the flow controller 28 or the like. Therefore, the introduction of a high pressure or a larger flow rate gas can be realized in a short time. For this reason, the peeling force (detachment force) acting on the adhered fine particles can be increased, and the cleaning in the processing chamber 1 can be efficiently realized. In addition, a gas that leaks in order to increase the pressure in the processing apparatus when the atmosphere is released can be introduced into the processing chamber 1 via the intermediate chamber 4, and in this case, a gas supply system disposed in the processing chamber 1. (Flow controller 26, valve 27) may be omitted and not used.

  Furthermore, during the start-up operation of the apparatus after the WET cleaning of this embodiment, it is possible to efficiently perform the cleaning of the adhered fine particles by introducing a high-pressure and large-flow gas with a high-temperature gas. FIG. 3 shows a configuration in which a gas heating means is arranged in the gas supply system. FIG. 3 is a longitudinal sectional view schematically showing an outline of a configuration of a modification of the embodiment shown in FIG.

  In this figure, portions where the same reference numerals as those in FIG. 1 are cited are the same as those in FIG. A heating unit 32 is disposed on the gas introduction path of the gas supply system of the intermediate chamber 4 in this figure. The heating unit 32 may be configured by winding a heater such as a sheathed heater or a heat pipe around a gas pipe constituting the gas introduction path, or a quartz heater may be arranged inside the pipe. The heating unit 32 has a function of adjusting the temperature in order to prevent warming as well as adjusting the temperature.

  When the gas is introduced from the intermediate chamber 4 into the processing chamber 1, it is necessary to protect the main pump 13a such as a turbo-molecular pump of a vacuum exhaust system from the action due to the high pressure of the introduced gas. Therefore, in this modification, the valve 30c and the valve 33 are connected to a communication path between the vacuum pump 13a on the upstream side near the processing chamber 1 constituting the vacuum exhaust system and the auxiliary pump 13b disposed on the downstream side. The exhaust passages from the processing chamber 1 and the intermediate chamber 4 are connected to each other via these. These exhaust paths are cleaning exhaust paths through which the gas from the processing chamber 1 and the intermediate chamber 4 flows inside and flows into the auxiliary pump 13b from the upstream side.

  When introducing a high-pressure or large-flow gas into the processing chamber 1, a valve 14a disposed on an exhaust path communicating between the processing chamber 1 and the main pump 13a, and the main pump 13a and the auxiliary pump 13b The main pump 13a is isolated from the gas flow (exhaust gas) by closing 14b disposed on the exhaust path communicating with the gas pump. The downstream end of the cleaning exhaust path is connected to and communicated with the exhaust path between the outlet of the valve 14b and the inlet of the auxiliary pump 13b, so that the valve 33 is closed with the valves 14a and 14b closed. Is opened to bypass the main pump 13a to form an exhaust path from the processing chamber 1 to the auxiliary pump 13b.

  Since the auxiliary pump 13b is a dry pump configured to be evacuated from atmospheric pressure, the auxiliary pump 13b can be operated even under high pressure. For this reason, when a high-pressure, large-flow gas is introduced into the processing chamber 1, the main pump 13a such as a turbo molecular pump that is difficult to exhaust the high-pressure or large-flow gas is protected from the action of the gas. In addition, the processing chamber 1 can be efficiently evacuated and cleaned. Further, the introduced gas has a high temperature, so that the cleaning can be made more efficient, the desorption of the adsorbed water can be promoted, and the evacuation time after the WET cleaning can be shortened.

  Further, in FIG. 3, the vacuum exhaust system of the intermediate chamber 4 is connected to the exhaust path on the inlet side of the main pump 13a via the valve 30b, and connected to the inlet side of the auxiliary pump 13b via the valve 30c. For this reason, it is possible to evacuate from a low vacuum level to a high vacuum level. That is, the valve 30b is opened, and the exhaust path is used so that the exhaust up to a high degree of vacuum can be performed using the main pump 13a such as a turbo molecular pump without passing through the inside of the processing chamber 1. Using such a configuration, it is possible to periodically exhaust to a high degree of vacuum and to clean the intermediate chamber 4 independently of the cleaning of the processing chamber 1. Although not shown, the same operation can be achieved even if the intermediate chamber 4 is provided with an evacuation system independently.

  Further, in the modification of FIG. 3, the cleaning gas is introduced into the processing chamber 1 while detecting whether or not the attached fine particles have been removed. Thereby, gas can be introduced more efficiently and the time required for cleaning can be reduced. In this modification, a particulate monitor 35 that can detect particulates is disposed between the main pump 13a and the auxiliary pump 13b. The particulate monitor 35 is disposed on the downstream side of the connecting portion between the exhaust path between the main pump 13 a and the auxiliary pump 13 b and the cleaning exhaust path including the valves 30 c and 33.

  The particulate monitor 35 measures particulates passing through the exhaust path with, for example, laser scattered light. The number of adhered particulates removed as a result of cleaning by gas introduction and the number of particulates detected by the particulate monitor 35 are determined. Since there is a correlation, for example, a proportional relationship, the control device can determine whether the removal of the attached fine particles has been completed using the detection result. The necessity of introducing gas can be determined by determining whether the number of particles related to the output detected by the particle monitor 35 is smaller than a predetermined number.

  In the embodiment shown in FIGS. 1 to 3, the intermediate chamber 4 is arranged in the middle of the path through which the semiconductor wafer is transferred, but the intermediate chamber 4 is not on the transfer path between the transfer chamber 3 and the processing chamber 1, but separately. Even if it is disposed, cleaning can be performed by introducing a shock wave caused by gas into the processing chamber 1. In this case, cleaning by the shock wave of gas can be controlled and executed independently. Further, the cleaning gas introduction part may be constituted by a plurality of pipes connected to a plurality of locations in the processing chamber 1 so that the gas can be uniformly introduced into each part of the processing chamber 1. Alternatively, the outer peripheral portion of the processing chamber 1 is a vacuum chamber, and the gas introduced into the vacuum chamber is opened and closed by opening and closing a plurality of valves disposed on a plurality of gas introduction paths that connect the outer peripheral portion and the inside of the processing chamber 1. It may be introduced into the processing chamber 1.

  FIG. 4 shows another modification of the embodiment shown in FIG. This modification is provided with a configuration for introducing another gas capable of removing the attached fine particles by the shock wave of the gas. FIG. 4 is a longitudinal sectional view schematically showing the outline of the configuration of another modification of the embodiment shown in FIG.

  In this modification, the process of removing the adhered fine particles by the gas shock wave is performed only when the semiconductor wafer is carried in. When the semiconductor wafer is unloaded, the processing on the wafer is completed, so that even if foreign matter adheres to the semiconductor wafer, cleaning can be performed in the next semiconductor wafer cleaning process. However, when the semiconductor wafer is unloaded, the occurrence of shock waves is suppressed and the attached fine particles are prevented from peeling off, thereby reducing the occurrence of foreign matter. Specifically, the semiconductor wafer is processed by opening and closing the valves 7 and 8 in a state in which the difference in pressure between the intermediate chamber 4 and the processing chamber 1 is reduced so that the shock wave does not occur or is reduced. Unload from room 1. Thereafter, the valves 7 and 8 are closed and the gas is supplied from the gas supply system into the intermediate chamber 4 to increase the pressure to such a level that the shock wave is generated.

  Thereafter, the valve 8 is opened to introduce a gas shock wave into the processing chamber 1 for cleaning to remove the attached fine particles, and the valve 7 is opened to carry the semiconductor wafer to be processed into the processing chamber 1. By doing so, cleaning by the gas shock wave is performed only when the semiconductor wafer is carried in. In this case, since it takes time to increase the pressure in the intermediate chamber 4, there is a possibility that the throughput is adversely affected.

  For this reason, in the modification shown in FIG. 4, the intermediate chamber 4 is disposed in the vacuum vessel constituting the processing chamber 1 via a connecting passage provided with a valve 8, and the space between the transfer chamber 3 and the processing chamber 1 is arranged. Only the valve 7 is disposed on the communicating passage. In the case of such a configuration, the valve 8 is opened before the semiconductor wafer is carried in, the gas is introduced into the processing chamber 1 through the intermediate chamber 4 and cleaning is performed, and the semiconductor wafer is processed during and after the processing. 8 is closed and no gas is introduced into the processing chamber 1.

  The above embodiment describes the configuration for introducing the gas. In the plasma processing apparatus, it is possible to remove the attached fine particles more effectively by combining the discharge of the plasma and the introduction of the gas. For example, in the process of starting the plasma processing apparatus after WET cleaning, the attached fine particles can be further removed by electrically removing the attached fine particles by plasma discharge after performing the above-described cleaning by introducing gas.

  The removal of adhering fine particles by introduction of gas becomes difficult because the peeling force of the fluid acting on the fine particles decreases as the diameter of the fine particles decreases. Therefore, an electric peeling force is applied to the attached fine particles by plasma discharge to facilitate removal of the fine attached fine particles.

  That is, as described above, the valves 8 and 25 are opened and the Ar gas supplied into the intermediate chamber 4 is introduced into the processing chamber 1 into the processing chamber 1 to remove the adhering fine particles in the processing chamber 1. Next, after the valve 8 is closed and the intermediate chamber 4 is hermetically sealed and partitioned, the pressure of Ar gas is increased from the gas supply system and maintained at a predetermined value (10 to 1000 Pa). On the other hand, Ar gas remaining in the processing chamber 1 is evacuated by the operation of a vacuum pumping system, for example, the main pump 13a shown in FIG. 3, and the processing chamber 1 is depressurized again to a high degree of vacuum.

The attached fine particles peeled off by introducing Ar gas into the processing chamber 1 are exhausted out of the processing chamber 1 together with Ar gas. In order to remove fine particles remaining on the inner wall surface of the processing chamber 1 or the surface of the internal member facing the plasma, the valve 29 is opened in the processing chamber 1 and the processing gas whose supply is adjusted by the flow rate controller 28 is supplied. To do. The operation of the flow rate adjusting valve arranged upstream of the vacuum exhaust device 9 (not shown in the drawing of the vacuum exhaust system) is adjusted by the control device so that the vacuum gauge 18 has a predetermined value. In other words, plasma is formed in the processing chamber 1 by the interaction between the processing gas and the electric field or magnetic field supplied from the plasma generator 34 shown in FIG. The As the processing gas, Ar or Ar and oxygen, SF ₆ and O _{2 and the} like are preferable.

  When plasma is formed in the processing chamber 1, the adhering fine particles adhering to the surface inside the processing chamber 1 are separated from the surface by the action of an electric force and float in the plasma to form a vacuum exhaust system. The gas is exhausted outside the processing chamber 1 by the operation. Alternatively, there is also a case in which after one end is detached, it again adheres to the surface of another part in the processing chamber 1. Next, the operation of the plasma generation unit 34 is stopped, the plasma is extinguished, the valve 29 is closed, and the supply of the processing gas from the processing gas supply system is stopped. The pressure in the processing chamber 1 closed by the operation of the evacuation system is reduced, and the pressure difference from the intermediate chamber 4 is such that a shock wave is generated when the valve 8 is opened, for example, the pressure value in the intermediate chamber 4 is the processing chamber 1. When the control device that has received the output detected by the vacuum gauge 18 detects that the pressure value has doubled or exceeded the internal pressure value, the valve 8 is opened according to the command signal from the control device, and Ar The gas is introduced from the intermediate chamber 4 maintained at a value within a range where the gas pressure can be regarded as constant.

  The adhering fine particles adhering to the surface due to the shock wave generated in the processing chamber 1 due to the introduction of this gas, in particular once detached and then adhering again, are peeled off from the surface and removed, and discharged out of the processing chamber 1 by a vacuum exhaust system. To remove. By repeating such steps, the adhered fine particles in the processing chamber 1 can be effectively removed.

  In the above operation, in addition to the process of starting the plasma processing apparatus after WET cleaning, the semiconductor wafer is processed a plurality of times. As a result, the adhered fine particles in the processing chamber 1 are accumulated and contamination of the semiconductor wafer due to foreign matter occurs. If it is determined that there is a risk of the occurrence of the error, the user's appropriate determination, or a predetermined number of processed wafers after cleaning of the semiconductor wafer, the number of continuous processes, the accumulated value of the number of past processes recorded, etc. You may carry out at the timing according to. Further, the measurement may be performed according to the degree of increase / decrease of the fine particles obtained as a result of detecting the number of fine particles by the fine particle monitor 35 shown in FIG.

  The above embodiment can be applied to a plasma etching apparatus, a plasma CVD apparatus, a plasma sputtering apparatus, an ion implantation apparatus, a low pressure CVD apparatus, a heat treatment apparatus, and the like. Further, the present invention can be applied to any apparatus provided with a vacuum-isolated processing chamber that processes a sample in a decompressed container.

It is a longitudinal section showing an outline of composition of a vacuum processing device concerning an embodiment of the invention typically. It is a top view which shows typically the outline of a structure of the Example shown in FIG. It is a longitudinal cross-sectional view which shows the outline of the structure of the modification of the Example shown in FIG. 1 typically. It is a longitudinal cross-sectional view which shows typically the outline of the structure of another modification of the Example shown in FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Processing chamber 2 Introduction chamber 3 Transfer chamber 4 Intermediate chamber 5, 6, 7, 8, 10, 12, 14, 20, 21, 23, 25, 27, 29, 30, 33 Valve 9, 11, 13 Vacuum exhaust apparatus 15, 16, 17, 18 Vacuum gauge 19, 22, 24, 26, 28 Flow controller 31 Vacuum robot 32 Heating unit 34 Plasma generating unit 35 Particle monitor

Claims (8)

  A processing chamber in which a substrate-like object to be processed is processed in a decompressed interior, an introduction chamber for carrying in or out the object to / from the processing apparatus, and the interior of the processing chamber and the introduction chamber being decompressed A vacuum processing apparatus comprising a transfer chamber for delivering the object to be processed, each of an intermediate chamber disposed between the transfer chamber and the processing chamber, and each of the transfer chamber, the intermediate chamber, and the processing chamber A connecting portion having an opening through which the workpiece is transported, a valve for hermetically opening and closing the opening of each of the connecting portions, and a pressure in the intermediate chamber for the transport chamber and the processing chamber A vacuum processing apparatus comprising pressure adjusting means that can be adjusted independently of the pressure.   The vacuum processing apparatus according to claim 1, wherein the vacuum has a function of opening a valve disposed between the intermediate chamber and the processing chamber in a state where the pressure in the intermediate chamber is higher than the pressure in the processing chamber. Processing equipment.   3. The vacuum processing apparatus according to claim 2, wherein the valve is opened in a state where the pressure in the intermediate chamber is at least twice as high as the pressure in the processing chamber connected by the connecting portion.   The vacuum processing apparatus according to claim 1, further comprising a heater that heats a gas supplied to the intermediate chamber.   After processing the substrate-like object to be processed disposed inside the decompressed processing chamber, the intermediate chamber connected to the processing chamber and the interior of the transport chamber connected to the intermediate chamber and decompressed are processed. A vacuum processing method for carrying out the object to be processed by partitioning the intermediate chamber from the transfer chamber and the processing chamber and adjusting the internal pressure independently of the intermediate chamber.   The vacuum processing method according to claim 5, wherein a gas is supplied into the intermediate chamber and the pressure in the intermediate chamber is made higher than the pressure in the processing chamber, and then the workpiece is transferred.   The vacuum processing method according to claim 5, further comprising a valve that partitions between the intermediate chamber, the transfer chamber, and the processing chamber, and supplies a gas to the intermediate chamber to reduce a pressure in the intermediate chamber. A vacuum processing method for conveying the object to be processed by opening a valve that partitions between the processing chamber and the intermediate chamber after the pressure in the processing chamber is increased by two times or more.   8. The vacuum processing apparatus according to claim 6, wherein a step of opening the valve after supplying a gas to the intermediate chamber to increase the pressure in the intermediate chamber is repeated.

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